KR102220854B1 - Physical vapor disposition device - Google Patents

Abstract

A physical vapor deposition device is disclosed. A physical vapor deposition device according to an embodiment comprises: a processing chamber in which a substrate is seated and a deposition process for the substrate is performed; a source module including a target disposed on an upper portion of the processing chamber and a source chamber disposed on an upper portion of the target; a magnetic module provided in the source chamber to form a magnetic field close to the target and including a plurality of magnet bodies revolving around a revolving axis; a plasma generating unit for generating plasma in the processing space; and a voltage source for applying an RF bias voltage to the target. The present invention performs the substrate deposition process by efficiently controlling the magnetic field applied to the target during the deposition process of the substrate.

Description

Physical vapor deposition apparatus {PHYSICAL VAPOR DISPOSITION DEVICE}

The following embodiments relate to a physical vapor deposition apparatus.

Vapor deposition is largely classified into two types. One is PVD (Physical Vapor Deposition) and the other is CVD (Chemical Vapor Deposition), the difference between the two is from a gaseous state (generally an ionized atomic state) to a solid state in the substrate where the material to be deposited (target) is the deposition target. It depends on what process you go through when you are transformed.

The distinct difference in the process is that PVD requires a vacuum environment. The evaporation method corresponding to PVD includes sputtering, e-beam evaporation, thermal evaporation, laser molecular beam evaporation (L-MBE, Laser Molecular Beam Epitaxy), and pulsed laser evaporation (PLD). Deposition). The reason why these methods can be tied to PVD in common is that the process of changing the gaseous state to a solid state when the material to be deposited is deposited on a substrate is a physical change.

When depositing commonly used oxide semiconductors or GaAs (gallium arsenide), PVD methods first sinter or melt the compounds to form a solid target, volatilize it with heat or an electron beam, and deposit it on a substrate, or After inserting the material into the cell (effusion cell), the door of the cell is opened and closed. The raw material is blown out in a gaseous state through heat, laser, electron beam, etc. It is changed and deposited.

At this time, the chemical composition of the substance once attached to the substrate is the same as the composition of the gaseous substance arriving at the substrate. PVD requires a vacuum because the material to be deposited is made into a gaseous state and blown away.This is to prevent the problem that it cannot reach the substrate due to colliding with other gas molecules in the middle, or it loses heat in the middle and turns into a solid.

An object according to an embodiment is to provide a physical vapor deposition apparatus that performs a substrate deposition process by efficiently controlling a magnetic field applied to a target during a substrate deposition process.

An object according to an embodiment is to provide a physical vapor deposition apparatus capable of adjusting a magnetic field applied to a target surface according to a target profile during a substrate deposition process.

A physical vapor deposition apparatus according to an embodiment includes: a processing chamber in which a substrate is mounted and a deposition process is performed on the substrate; A source module including a target disposed above the processing chamber and a source chamber disposed above the target; A magnetic module including a plurality of magnet bodies provided in the source chamber to form a magnetic field close to the target and revolve around an orbit axis; A plasma generator for generating plasma in the processing space; And a voltage source for applying an RF bias voltage to the target.

The source chamber is connected to the upper surface of the target to support the target, and the backing plate forming a bottom surface of the source chamber; And a separation plate separating the inner space vertically, and the magnetic module may be disposed above the separation plate.

The separating plate may include a plurality of through holes penetrating vertically so that the internal space of the source chamber separated vertically is communicated.

The source module may further include a cooling unit supplying a fluid for controlling a temperature of the target to the source chamber, and the fluid supplied by the cooling unit may be supplied to a lower portion of the separation plate.

The magnetic module includes a plurality of rotating parts connected to support each of the plurality of magnet bodies; A connection part which rotates about the revolution axis and is connected to each of the plurality of rotation parts at different points; And a rotation motor connected to the connection part and rotating the connection part.

The orbit axis may be parallel to a central axis penetrating the center of the target vertically.

The orbital axis may be spaced apart from the central axis.

At least one of the plurality of magnet bodies may be disposed so that the magnetic poles are opposite to the other magnet bodies.

The magnetic module may further include a rotation detection sensor for sensing the revolution of the plurality of magnet bodies.

The physical vapor deposition apparatus further includes a control unit for controlling the operation of the magnetic module,

The control unit may control the operation of the magnetic module so that the deposition state of the substrate reaches a set profile.

The physical vapor deposition apparatus according to an embodiment may perform a substrate deposition process by efficiently controlling a magnetic field applied to a target during a substrate deposition process.

The physical vapor deposition apparatus according to an embodiment may adjust a magnetic field applied to a target surface according to a target profile during a plate deposition process.

Effects of the physical vapor deposition apparatus according to an exemplary embodiment are not limited to those mentioned above, and other effects not mentioned may be clearly understood by those skilled in the art from the following description.

The following drawings attached to the present specification illustrate a preferred embodiment of the present invention, and serve to further understand the technical idea of the present invention together with the detailed description of the present invention, so the present invention is limited to the matters described in such drawings. It is limited and should not be interpreted.
1 is a perspective view of a physical vapor deposition apparatus according to an embodiment.
2 is a perspective view of a source chamber according to an exemplary embodiment.
3 is a cross-sectional view of a physical vapor deposition apparatus according to an exemplary embodiment.
4 is an operation diagram of a magnetic module according to an embodiment.

Hereinafter, embodiments will be described in detail through exemplary drawings. In adding reference numerals to elements of each drawing, it should be noted that the same elements are assigned the same numerals as possible even if they are indicated on different drawings. In addition, in describing the embodiment, if it is determined that a detailed description of a related known configuration or function interferes with the understanding of the embodiment, a detailed description thereof will be omitted.

In addition, in describing the constituent elements of the embodiment, terms such as first, second, A, B, (a) and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, order, or order of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected or connected to that other component, but between each component It should be understood that may be “connected”, “coupled” or “connected”.

Components included in one embodiment and components including common functions will be described using the same name in other embodiments. Unless otherwise stated, descriptions in one embodiment may be applied to other embodiments, and detailed descriptions in the overlapping range will be omitted.

1 to 4, the physical vapor deposition apparatus 1 according to an exemplary embodiment may be used to form a thin film on the surface of the substrate W. According to an exemplary embodiment, the physical vapor deposition apparatus 1 may deposit a thin film on the surface of the substrate W through a sputtering technique. Specifically, the physical vapor deposition apparatus 1 ejects atoms from the target T containing the source material constituting the thin film, and deposits the ejected atoms on the surface of the substrate W to be deposited on the surface of the substrate W. A thin film can be formed on the

The substrate W on which the thin film is formed through the physical vapor deposition apparatus 1 may be a silicon wafer serving as a base of a semiconductor. Further, the substrate W may be a glass substrate W for a flat panel display (FPD) device such as a liquid crystal display (LCD) or a plasma display panel (PDP). However, the type of the substrate W is not limited to the above-described use. Meanwhile, in the drawings, the substrate W is shown to have a disk shape, but the shape of the substrate W is not limited thereto. Hereinafter, for convenience of explanation, it is assumed that the substrate W has a disk shape.

A physical vapor deposition apparatus according to an embodiment may include a processing chamber 10, a source module 11, a magnetic module 12, a plasma generator (not shown), a voltage source 13, and a control unit (not shown). I can.

The processing chamber 10 may form a processing space in which a deposition process for the substrate W is performed. A substrate W and a target T for forming a sputtered thin film layer on the substrate W may be positioned in the processing space. The processing chamber 10 is connected to a plasma generating unit to be described later and may receive a processing gas therein. The processing gas may include, for example, an inert gas such as neon, argon, or krypton, or a reactive gas such as nitrogen to form a nitride film or oxygen to form an oxide film. The processing chamber 10 may include an exhaust unit (not shown) that forms the processing space in a vacuum state so that pollutants, for example, pollutant particles such as dust, are removed in the processing space during the sputtering process. The processing chamber 10 may include a substrate entrance that is formed on a side surface and can be opened and closed so that the substrate W can be introduced into the processing space or the substrate W can be extracted from the processing space.

A substrate holder 14 may be provided inside the processing chamber 10 to support the substrate W introduced into the processing space. The substrate holder 14 can rotate the substrate W while supporting the substrate W. The substrate holder 14 can adjust the height of the substrate W with respect to the processing space by moving up and down in the processing space.

The source module 11 may include a target T, a source chamber 111 and a cooling unit 113.

The target T may include a source material to be deposited on the surface of the substrate W. The target T may be provided in a disk shape. The target T may include a conductive material such as copper, silver, gold, or nickel, or may include a non-conductive material such as silicon oxide, aluminum oxide, or silicon nitrate. However, this is only an example, and the type of the source material included in the target T is not limited thereto.

The target T may be disposed above the processing chamber 10. The surface of the target T where erosion occurs may be disposed to face the deposition surface of the substrate W disposed in the processing space.

The source chamber 111 may be located above the target T. The source chamber 111 may form an inner space in which a magnetic module 12 to be described later is disposed. In this case, the internal space formed by the source chamber 111 and the processing space of the processing chamber 10 may be disposed at positions facing each other with respect to the target T. The source chamber 111 may include a backing plate 112 and a separation plate 114.

The backing plate 112 may support the target T. The backing plate 112 may be in contact with the upper surface of the target T to support the target T. In this case, the backing plate 112 may constitute the upper surface of the processing chamber 10 and at the same time constitute the bottom surface of the source chamber 111. Since the target T is mounted on the lower surface of the backing plate 112, the target T may be disposed in a state suspended above the processing space. The backing plate 112 may be formed of a conductive material so as to apply a magnetic field and a voltage to the target T.

The separation plate 114 may be disposed inside the source chamber 111. The separation plate 114 may separate the inner space of the source chamber 111 into an upper space 111b and a lower space 111a. In this case, the separating plate 114 may include a plurality of through holes vertically penetrating so that the internal spaces of the source chamber 111 separated vertically are communicated with each other. The plurality of through holes may be disposed along the circumferential direction of the separation plate 114.

The cooling unit 113 may supply the fluid F for controlling the temperature of the target T to the source chamber 111. In this case, the fluid F supplied by the cooling unit 113 may be supplied to the lower space 111a of the source chamber 111, that is, a space located under the separation plate 114. The cooling unit 113 may include a supply line for supplying the fluid F to the lower space 111a and a discharge line for discharging the fluid F from the lower space 111a. The cooling unit 113 may adjust the temperature of the target T in a conduction manner through the backing plate 112. According to this structure, the fluid F supplied by the cooling unit 113 is accommodated in the lower space 111a, but since the fluid F does not exist above the separation plate 114, the backing plate ( It is possible to prevent the mechanical device located on top of 112) from being damaged by the fluid (F).

The magnetic module 12 is provided in the source chamber 111 and may form a magnetic field close to the target T. The magnetic module 12 may be located in the upper space 111b of the separation plate 114. The magnetic module 12 may include a plurality of magnet bodies 121 generating a magnetic field. In this case, the plurality of magnet bodies 121 may perform revolution around the revolution axis A1 perpendicular to the target (T) plane. In this case, the revolution axis A1 may be parallel to a central axis penetrating the center of the target T vertically. The magnetic module 12 may include a rotation part 1221, a connection part 1222, a rotation motor, and a rotation detection sensor.

The rotating part 1221 may support each of the plurality of magnet bodies 121. For example, a plurality of rotating parts 1221 may be provided, and each of the plurality of rotating parts 1221 may be connected to an upper portion of the plurality of magnet bodies 121. In this case, the rotating part 1221 rotates about a central axis perpendicular to the target T plane, so that the magnet body 121 rotates around the revolution axis A1 and rotates at the same time.

The connection part 1222 may connect a plurality of rotation parts 1221. The connection part 1222 may rotate around the revolution axis A1, that is, rotate. A plurality of rotating parts 1221 may be respectively connected to different points of the connection part 1222. In this case, points at which the revolution shaft A1 and the connection portion 1222 and the rotation portion 1221 are connected may be spaced apart from each other. Accordingly, when the connecting portion 1222 rotates around the revolution axis A1, each of the rotating portions 1221 connected to the connecting portion 1222 rotates around the revolution axis A1.

The rotation motor 123 is connected to the connection part 1222 and may provide a driving force to rotate the connection part 1222 about the revolution axis A1.

Meanwhile, the revolution axes A1 of the plurality of magnet bodies 121 may be parallel to a central axis penetrating the center of the target T vertically, and may be spaced apart from the central axis by a predetermined distance. In this case, since a portion of the target T to which the magnetic field is applied by the plurality of magnet bodies 121 can be changed, deposition on the substrate W can be controlled.

The plurality of magnet bodies 121 may generate magnetic fields of the same size, but unlike this, may generate magnetic fields of different sizes. In this case, since the magnetic fields generated by each of the plurality of magnet bodies 121 are different from each other, the magnetic force applied to the target T may be selectively adjusted. In addition, at least one of the plurality of magnet bodies 121 may be disposed to have a magnetic pole opposite to the other magnet bodies 121. As will be described later, since the RF DC voltage is applied to the target T, the movement of the source material can be controlled by adjusting the magnetic pole direction generated by the magnet body 121.

The rotation detection sensor 124 may detect the revolution of the plurality of magnet bodies 121. The rotation sensor may be disposed in the upper space 111b of the source chamber 111. By detecting the rotation of the magnet body 121, the rotation detection sensor can monitor the movement of the magnet body 121 between the deposition processes on the substrate W in real time.

The plasma generator (not shown) may generate plasma in the processing space. The plasma generator is connected to the processing chamber 10 and may supply a processing gas to the processing chamber 10. The plasma chamber can generate plasma in the processing space by converting the state of the processing gas to the plasma state.

The voltage source 13 may apply a voltage to the target T. The voltage source 13 is disposed above the source module 11 and may apply a pulsed voltage, that is, an RF bias voltage, through the source module 11. According to this method, since the voltage to which the target T is applied changes in the form of a pulse, even when the source material constituting the target T is a non-conductive material, deposition on the substrate W can be performed. .

The control unit may control the operation of the magnetic module 12. The controller may control the operation of the magnetic module 12 so that the deposition state of the substrate W reaches a set profile.

As described above, although the embodiments have been described by the limited drawings, various modifications and variations are possible from the above description to those of ordinary skill in the art. For example, the described techniques are performed in a different order from the described method, and/or components such as the described structure, device, etc. are combined or combined in a form different from the described method, or in other components or equivalents. Even if substituted or substituted by, appropriate results can be achieved.

1: physical vapor deposition apparatus
10: processing chamber
11: source module
12: magnetic module

Claims (10)

A processing chamber in which a processing space in which a substrate deposition process is performed is formed;
A target disposed in the processing chamber and disposed on the substrate;
A source module disposed above the processing chamber;
A magnetic module disposed in the source chamber and including a plurality of magnet bodies forming a magnetic field close to the target;
Includes; a plasma generating unit for generating plasma in the processing space,
The source chamber,
A source chamber coupled to an upper portion of the processing chamber;
A plate disposed inside the source chamber and separating the inner space of the source chamber into an upper space and a lower space;
A backing plate that forms at least a part of an upper surface of the processing chamber and at least a part of a lower surface of the source module, the target is supported, and exposed to the lower space;
A fluid (F) that is filled in the lower space and controls the temperature of the target;
A cooling unit connected to the lower space and including a supply line for supplying the fluid F and a discharge line for discharging the fluid F in the lower space; and
The fluid (F) is in contact with the upper surface of the backing plate,
The magnetic module,
A plurality of the magnet bodies disposed in the upper space;
Each rotating part disposed in the upper space and supporting each of the magnet bodies;
A plurality of connecting portions disposed in the upper space and connecting the rotating portions;
Includes; a rotation motor connected to the connection portion and rotating the connection portion,
At least one of the plurality of magnet bodies is disposed opposite to the magnetic poles of the other magnet bodies,
A central axis penetrating the center of the target vertically is formed,
The rotation unit is rotated about a central axis perpendicular to the target (T) plane,
It is disposed in the connection portion is formed to form an orbital axis forming the rotation center of the magnet bodies,
The central axis passing through the center of the target vertically and the orbiting axis are parallel,
When viewed from a top view, each of the connecting portions is disposed radially around the orbital axis,
When the rotation motor is operated, each rotation unit rotates about the rotation axis and rotates about a central axis perpendicular to the target (T) plane.
delete The method of claim 1,
For the supply line and discharge line
Physical vapor deposition apparatus further comprising a plurality of through holes penetrating the separation plate in the vertical direction. The method of claim 1,
The rotation motor is disposed on the upper side of the source chamber, the connection part is a physical vapor deposition apparatus connected to the rotation motor through the upper side of the source chamber.
delete delete delete delete The method of claim 1,
A physical vapor deposition apparatus further comprising a rotation sensor disposed in the source chamber and configured to detect revolution of the magnet body. delete

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