KR102211998B1 - Multi layer ceramic substrate with upper and lower surfaces having different coefficients of expansion and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion and a method of manufacturing the same. The method of manufacturing a multilayer ceramic substrate according to the present invention is a step of firing a first ceramic green sheet, a second ceramic green sheet, and a third ceramic green sheet to generate a first ceramic thin plate, a second ceramic thin plate, and a third ceramic thin plate. Wherein the first ceramic green sheet and the second ceramic green sheet are made of a material having a thermal expansion coefficient greater than that of a material constituting the third ceramic green sheet; Forming via holes in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate; Filling a via hole formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate with a conductive paste and performing heat treatment to form a via electrode; Forming internal electrodes by printing a pattern with a conductive paste on top surfaces of each of the first ceramic thin plate and the second ceramic thin plate and heat treatment; Applying a bonding agent to an upper surface of each of the first ceramic thin plate and the second ceramic thin plate to avoid via holes; The second ceramic thin plate is laminated on the first ceramic thin plate so that the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate are electrically connected to each other, and the third ceramic thin plate is formed on the second ceramic thin plate. Stacking the ceramic thin plates to create a multilayer ceramic substrate; Heat treating the multilayer ceramic substrate to form a downwardly convex shape; And forming external electrodes by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate and performing heat treatment.

Description

TECHNICAL FIELD [0001] A multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, and a method for manufacturing the same TECHNICAL FIELD

The present invention relates to a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, and a method for manufacturing the same, and more particularly, to a convex shape in one direction out of the upper and lower directions produced by laminating and heat treating ceramic thin plates having different coefficients of thermal expansion. It relates to a multilayer ceramic substrate having.

The multilayer ceramic substrate can be used as a space transformer in a probe card used to inspect the operation of a semiconductor. The probe card is a device that connects a semiconductor chip and test equipment to inspect the operation of a semiconductor. Probe pins mounted on the probe card send electricity while contacting the semiconductor chip, and the defective semiconductor chip is selected according to the return signal.

Referring to FIG. 1, such a probe card is composed of a printed circuit board, an interposer, a space transformer, and a probe pin. By applying an electrical signal transmitted to the probe pin through a printed circuit board, an interposer, and a space transformer to a semiconductor chip Select whether or not the chip is defective. At this time, a pogo pin-type interposer (interposer with a pogo pin) presses the space transformer in a direction toward the semiconductor chip to contact the probe pin and the semiconductor chip. There is a problem in that the space transformer is convexly bent toward the semiconductor chip due to the force acting on the space transformer, and thus the exact point of the semiconductor chip cannot be contacted. In addition, the larger the size of the space transformer, the more severe the deformation caused by the force acting on the space transformer from the pogopin-shaped interposer, which becomes a bigger problem as the size of the space transformer increases. On the other hand, the pogo pin refers to a pin that is provided with a spring inside the pin and its length changes according to the pressure applied to both ends.

Due to the deformation of the space transformer, the alignment of the probe pins installed under the space transformer is disturbed, and accordingly, the probe pin and the semiconductor chip are not in contact, so that the electrical signal from the test equipment cannot be properly transmitted to the semiconductor chip. Exists.

Korean Patent Application Publication No. 10-2009-0120931 Korean Patent Application Publication No. 10-2009-0103002

An object of the present invention for solving the above-described problems is to provide a multilayer ceramic substrate having a concave shape in a direction toward a semiconductor chip to be tested.

Another object of the present invention is to provide a multilayer ceramic substrate having a concave shape in a direction toward a semiconductor chip to be tested by laminating a ceramic thin plate made of a material having a low coefficient of thermal expansion on the upper surface of a ceramic thin plate made of a material having a high coefficient of thermal expansion and performing bonding heat treatment. To provide.

Another object of the present invention is to use a multilayer ceramic substrate having a concave shape in a direction toward a semiconductor chip as a test object as a space transformer to disperse the force pressed from the interposer and to compensate for the deformation value, thereby improving the durability and deformation of the space transformer. To minimize it.

In order to achieve the above object, the method of manufacturing a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion according to the present invention comprises firing a first ceramic green sheet, a second ceramic green sheet, and a third ceramic green sheet. Generating a thin plate, a second ceramic thin plate, and a third ceramic thin plate, wherein the first ceramic green sheet and the second ceramic green sheet have a coefficient of thermal expansion greater than that of a material constituting the third ceramic green sheet. Composed of material; Forming via holes in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate; Filling a via hole formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate with a conductive paste and performing heat treatment to form a via electrode; Forming internal electrodes by printing a pattern with a conductive paste on top surfaces of each of the first ceramic thin plate and the second ceramic thin plate and heat treatment; Applying a bonding agent to an upper surface of each of the first ceramic thin plate and the second ceramic thin plate to avoid via holes; The second ceramic thin plate is laminated on the first ceramic thin plate so that the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate are electrically connected to each other, and the third ceramic thin plate is formed on the second ceramic thin plate. Stacking the ceramic thin plates to create a multilayer ceramic substrate; Forming a downwardly convex shape of the integrated multilayer ceramic substrate by heat-treating and bonding the multilayer ceramic substrate; And/or forming external electrodes by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate and performing heat treatment.

Preferably, the coefficient of thermal expansion of the first ceramic sheet is 5 to 7 µm/(℃.m), the coefficient of thermal expansion of the second ceramic sheet is 3 to 5 µm/(℃.m), and that of the third ceramic sheet. The coefficient of thermal expansion may have 1 to 3 µm/(℃.m).

Preferably, in the step of forming a downwardly convex shape by heat treatment of the multilayer ceramic substrate, a center point of the lower surface of the multilayer ceramic substrate is 10 downwardly based on the positions of both end points of the lower surface of the multilayer ceramic substrate. While moving to 50 microns, it is possible to form a convex shape downward.

Preferably, the bonding agent applied to the upper surface of the second ceramic thin plate includes a glass component, and a lower surface of the third ceramic thin plate having a different coefficient of thermal expansion than the second ceramic thin plate is formed on the upper surface of the second ceramic thin plate. Can be bonded more strongly.

In the multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion according to an embodiment of the present invention, an external electrode is formed on a lower surface, an internal electrode is formed on the upper surface, and passes through the upper surface and the lower surface, but a conductive paste is formed therein. A first ceramic thin plate on which a filled via hole is formed; A second ceramic thin plate stacked on the first ceramic thin plate, wherein an internal electrode is formed on an upper surface thereof, and a via hole filled with a conductive paste is formed therein while passing through the upper surface and the lower surface; And/or a third ceramic thin plate stacked on the second ceramic thin plate, wherein an external electrode is formed on an upper surface thereof, and a via hole filled with a conductive paste is formed therein while passing through the upper and lower surfaces, A bonding layer is formed between the first ceramic thin plate and the second ceramic thin plate and between the second ceramic thin plate and the third ceramic thin plate by means of a via hole communicated between layers, and the first ceramic thin plate, the The second ceramic thin plate and the third ceramic thin plate are electrically connected to each other, and the first ceramic thin plate and the second ceramic thin plate are composed of a material having a coefficient of thermal expansion smaller than that of a material constituting the third ceramic thin plate. The multilayer ceramic substrate formed by stacking the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate may have a downwardly convex shape.

The present invention can provide a multilayer ceramic substrate having a concave shape in a direction toward a semiconductor chip to be tested.

The present invention can provide a multilayer ceramic substrate having a concave shape in a direction toward a semiconductor chip to be tested by laminating a ceramic thin plate made of a material having a low coefficient of thermal expansion on the upper surface of a ceramic thin plate made of a material having a high coefficient of thermal expansion and performing bonding heat treatment. have.

In the present invention, a multilayer ceramic substrate having a concave shape in a direction toward a semiconductor chip to be tested is used as a space transformer to disperse the force pressed from the interposer and at the same time compensate for the deformation value, thereby minimizing the durability and deformation of the space transformer. have.

1 is a diagram showing the configuration of a probe card.
2 is a flow chart showing a method of manufacturing a multilayer ceramic substrate according to the first embodiment of the present invention.
3 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to the first embodiment of the present invention.
4 is a flowchart illustrating a method of manufacturing a multilayer ceramic substrate according to a second exemplary embodiment of the present invention.
5 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a second embodiment of the present invention.
6 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a third embodiment of the present invention.
7 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a fourth embodiment of the present invention.
8 is a flowchart illustrating a method of manufacturing a multilayer ceramic substrate according to a fifth embodiment of the present invention.
9 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a fifth embodiment of the present invention.
10 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a sixth embodiment of the present invention.
11 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a seventh embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to constituent elements in each drawing, it should be noted that the same constituent elements are given the same reference numerals as much as possible even though they are indicated on different drawings.

Further, in describing an embodiment of the present invention, if it is determined that a detailed description of a related known configuration or function interferes with an understanding of the embodiment of the present invention, a detailed description thereof will be omitted.

In addition, in describing the constituent elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, order, or order of the component is not limited by the term.

Multilayer ceramic substrate with upper and lower surfaces having different coefficients of thermal expansion and method for manufacturing the same (Example 1)

A structure of a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion and a method of manufacturing the same according to an exemplary embodiment of the present invention will be described below with reference to FIGS. 2 to 3.

2 is a flowchart illustrating a method of manufacturing a multilayer ceramic substrate 100 according to the first embodiment of the present invention. And, Figure 3 is a cross-sectional view showing the structure of the multilayer ceramic substrate 100 according to the first embodiment of the present invention. The multilayer ceramic substrate 100 according to the first embodiment may mean a multilayer ceramic substrate 100 having upper and lower surfaces having different coefficients of thermal expansion.

2 to 3, the method of manufacturing the multilayer ceramic substrate 100 according to the first embodiment is a first ceramic thin plate by firing a first ceramic green sheet, a second ceramic green sheet, and a third ceramic green sheet, respectively. (110), the step of generating the second ceramic thin plate 120 and the third ceramic thin plate 130 (S1010), the first ceramic thin plate 110, the second ceramic thin plate 120 and the third ceramic thin plate 130 Forming the via hole 170 in each (S1020), a conductive paste is applied to the via hole 170 formed in each of the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130. Filling and heat treatment to form the via electrode 170 (S1030), the first ceramic thin plate 110 and the second ceramic thin plate 120 are printed with a conductive paste on the upper surface of each of the patterns and heat treated to form the internal electrode 160 ) Forming (S1040), applying a bonding agent 150 to the upper surfaces of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 to avoid the via hole 170 (S1050), 1 A second ceramic thin plate 120 is stacked on the top of the first ceramic thin plate 110 so that the second ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are electrically connected to each other. Step of stacking the third ceramic thin plate 130 on the top of the ceramic thin plate 120 to generate the multilayer ceramic substrate 100 (S1060), the multilayer ceramic substrate 100 is heat-treated and bonded to lower the integrated multilayer ceramic substrate Forming a convex shape (S1070) and/or forming an external electrode by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate 100 and heat treatment (S1080). .

Sintering the first ceramic green sheet, the second ceramic green sheet, and the third ceramic green sheet, respectively, to generate the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 (S1010) ), this embodiment does not produce a multilayer ceramic substrate by firing after stacking a plurality of ceramic green sheets, but firing each ceramic green sheet to produce each ceramic thin plate, A multilayer ceramic substrate is manufactured in the order of lamination. The temperature at which the ceramic green sheet is fired in this step may be 1000 to 1500°C. In addition, the ceramic green sheet may have a thickness of 50 to 600 microns, and the ceramic thin plate generated by firing the ceramic green sheet may have a thickness of 10 to 500 microns. In addition, the ceramic green sheet and/or the ceramic thin plate may have a diameter of 12 inches or more. In this step, the ceramic green sheet may be fired for 1 hour to 5 hours in an oxygen-free reducing environment or an atmospheric environment.

In the step (S1020) of forming a via hole 170 in each of the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 (S1020), the present embodiment is the ceramic thin plate 110, 120, One or more via holes 170 may be formed in 130. 3 is a view showing the state of the finally manufactured multilayer ceramic substrate, in which via holes 170 formed in the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are in communication with each other. A via hole 170 is expressed as a shape, and a via hole 170 is formed for each ceramic thin plate 110, 120, and 130. In this case, the via hole 170 may be formed through a process such as laser irradiation or chemical etching. The diameter of the via hole 170 may be 30 to 200 microns. According to an embodiment, the via holes 170 formed in the same ceramic thin plate may have the same diameter or may have different diameters.

Filling the via hole 170 formed in each of the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 with a conductive paste and heat treatment to form the via electrode 170 (S1030) ), in the present embodiment, the via hole 170 formed in the thin ceramic plates 110, 120, and 130 may be filled with a conductive paste and heat treated to form the via electrode 170. Although the via hole 170 and the via electrode 170 are marked with the same identification number, the via hole 170 represents a configuration in which the inside is empty, whereas the via electrode 170 is filled with a conductive paste in the via hole 170 It shows a configuration that has become an electrode. By forming the via electrode 170 by filling the via hole 170 formed in each of the ceramic thin plates 110, 120, and 130 with a conductive paste, the layers can be electrically connected to each other when each ceramic thin plate is stacked later. The conductive paste filled in the via hole 170 may include at least one of Ag, Cu, Au, Pd, Pt, Ag-Pd, Ni, Mo, and W.

In the step (S1040) of forming the internal electrode 160 by printing a pattern with a conductive paste on the upper surface of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 and heat treatment (S1040), this embodiment is a multilayer ceramic substrate Except for the ceramic thin plate (the third ceramic thin plate 130 in this embodiment) to be positioned on the uppermost layer of the 100, a pattern is printed using a conductive paste on the upper surfaces of the ceramic thin plates 110 and 120 and heat-treated to form internal electrodes ( 160) can be formed. In this case, the pattern printed and heat-treated in this step may correspond to the internal electrode 160, and the internal electrode 160 is present in the last multilayer ceramic substrate 100. The thickness of the internal electrode 160 may be 1 to 20 microns.

In the step (S1050) of applying the bonding agent 150 to the upper surface of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 to avoid the via hole 170 (S1050), the present embodiment is a ceramic thin plate 110, The bonding agent 150 may be applied to the rest of the upper surface of 120 excluding the point where the via hole 170 is formed. That is, the bonding agent 150 may be applied to the upper surface of the internal electrode 160 or directly to the upper surface of the ceramic thin plates 110 and 120. The bonding agent 150 is for bonding the ceramic thin plates 110, 120, and 130 to each other, and may be coated with a material that does not affect the printed pattern on the upper surfaces of the ceramic thin plates 110 and 120. The bonding agent 150 may be an inorganic material and/or an organic material, the inorganic material may include glass or ceramic, and the organic material may include epoxy or the like. In the finally manufactured multilayer ceramic substrate 100, the bonding agent 150 may form the bonding layer 150, and the thickness of the bonding layer may be 2 to 100 microns.

A second ceramic thin plate 120 is stacked on the first ceramic thin plate 110 so that the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are electrically connected to each other, 2 In the step of generating the multilayer ceramic substrate 100 by stacking the third ceramic thin plate 130 on the top of the ceramic thin plate 120 (S1060), this embodiment is formed on each of the ceramic thin plates 110, 120, 130 The ceramic thin plates 110, 120, and 130 are stacked so that the via electrode 170 forms a straight line so that an electrical signal can be transmitted from the lower surface of the first ceramic thin plate 110 to the upper surface of the third ceramic thin plate 130. I can. Accordingly, the ceramic thin plates 110, 120, and 130 may be electrically connected to each other through the via electrode 170 in communication. That is, the internal electrode 160 formed on the first ceramic thin plate 110 may be electrically connected to the internal electrode 160 formed on the second ceramic thin plate 120 through the via electrode 170. Finally, the external electrode 140 formed on the lower surface of the first ceramic thin plate 110 is formed on the inner electrode 160 of each layer and the upper surface of the third ceramic thin plate 130 through the via electrode 170. It may be electrically connected to the formed external electrode 140. The pogo pin of the interposer may be connected to the external electrode 140 formed on the lower surface of the first ceramic thin plate 110, and the external electrode 140 formed on the upper surface of the third ceramic thin plate 130 is a semiconductor to be tested. A probe pin to be in contact with the chip may be connected. A structure in which a plurality of thin ceramic plates 110, 120, and 130 are stacked by this step may mean a multilayer ceramic substrate 100.

In the step of forming a downwardly convex shape by heat treatment of the multilayer ceramic substrate 100 (S1070), in this embodiment, the multilayer ceramic substrate 100 formed by stacking a plurality of thin ceramic plates 110, 120, 130 is fired or The bonding agent applied on the upper surfaces of the ceramic thin plates 110 and 120 is melted by heat treatment, and then cooled again, so that the plurality of laminated ceramic thin plates 110, 120 and 130 may be bonded to each other. According to this embodiment, the plurality of ceramic thin plates 110, 120, and 130 may have different coefficients of thermal expansion. For example, the coefficient of thermal expansion of the first ceramic thin plate 110 positioned on the lowest layer of the multilayer ceramic substrate 100 is greater than that of the second thin ceramic plate 120 stacked on the first ceramic thin plate 110, and the second The material of each of the ceramic thin plates 110, 120, and 130 may be configured such that the coefficient of thermal expansion of the ceramic thin plate 120 is greater than that of the third ceramic thin plate 130 positioned on the uppermost layer of the multilayer ceramic substrate 100. have. The multilayer ceramic substrate 100 having such a configuration shows the appearance of a structure made of ceramic thin plates 110, 120, 130 in parallel to each other as shown in Fig. 3 (a) before being fired or heat treated by this step. Have. However, after firing or heat treatment in this step, the multilayer ceramic substrate 100 has a downwardly convex shape as shown in FIG. 3B. This is because the coefficient of thermal expansion of the material constituting the first ceramic thin plate 110 is greater than the coefficient of thermal expansion of the material constituting the second ceramic thin plate 120 and the third ceramic thin plate 130, so that the first ceramic thin plate 110 is the same. This is because bonding is performed after expanding more than the second ceramic thin plate 120 and the third ceramic thin plate 130 at temperature.

According to an embodiment, the coefficient of thermal expansion of the first ceramic thin plate 110 is 5 to 7 μm/(℃.m), the coefficient of thermal expansion of the second ceramic thin plate 120 is 3 to 5 μm/(℃.m), The coefficient of thermal expansion of the third ceramic thin plate 130 may be 1 to 3 µm/(℃.m).

According to an embodiment, when the multilayer ceramic substrate 100 is heat-treated at 800°C in an atmospheric environment, the center point of the lower surface of the multilayer ceramic substrate 100 is the position of both end points of the lower surface of the multilayer ceramic substrate 100 It can be moved 10 to 50 microns downward based on.

According to an embodiment, the bonding agent 150 for bonding between ceramic thin plates having different coefficients of thermal expansion may be made of a material having stronger adhesion. The multilayer ceramic substrate 100 having such a configuration may maintain an interlayer adhesive state despite a difference in relative length or volume between ceramic thin plates according to a change in temperature.

According to an embodiment, internal electrodes, via electrodes and/or external electrodes are formed by using a material having high durability against physical external pressure as a conductive paste in a ceramic sheet having a large coefficient of thermal expansion, and heat treatment is performed on a ceramic sheet having a large coefficient of thermal expansion. By predicting the degree of expansion in the step, a via hole may be formed with a size smaller than that of a via hole formed in another ceramic thin plate.

On the other hand, the melting point of the bonding agent applied to the upper surfaces of the ceramic thin plates 110 and 120 may vary depending on the material constituting the bonding agent. In this step, the ceramic thin plates 110, 120, 130, and the ceramic thin plates 110 In order to prevent melting of the conductive paste printed or filled on the internal electrode 160 and/or the via electrode 170 formed on the 120, 130, the melting point of the bonding agent 150 is the ceramic thin plates 110, 120, 130), the melting point of the conductive paste used for pattern printing (the melting point of the inner electrode material), and the melting point of the conductive paste filled in the via hole 170 may be set lower. Furthermore, the melting point of the ceramic thin plates 110, 120, and 130 may vary depending on the material constituting the ceramic thin plates 110, 120, and 130. Accordingly, in this embodiment, the multilayer ceramic substrate 100 formed by stacking a plurality of thin ceramic plates 110, 120, 130 is higher than the melting point of the bonding agent 150 and the melting point of the ceramic thin plates 110, 120, 130 It can be fired or heat treated at a lower temperature than that. That is, in the present embodiment, the multilayer ceramic substrate 100 is fired or heat treated at a temperature that does not affect the ceramic thin plates 110, 120, and 130, thereby It can prevent defects. For example, in the present embodiment, the multilayer ceramic substrate 100 may be fired or heat treated at 600 to 900° C., preferably 800° C. in an atmospheric environment. In this case, the firing or heat treatment time may vary depending on the number and area of the plurality of laminated ceramic thin plates. For example, when the diameter of each of the plurality of laminated ceramic thin plates is 12 inches, in this embodiment, the plurality of laminated ceramic thin plates may be fired or heat treated for 0.5 to 2 hours.

In the step (S1080) of forming external electrodes by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate 100 and heat treatment (S1080), in the present embodiment, the multilayer ceramic substrate 100 formed by bonding each layer to each other The external electrode 140 may be formed by printing a pattern using a conductive paste on the upper and lower surfaces of and heat treatment. Meanwhile, the conductive paste used for the internal electrode 160 or the via electrode 170 of the multilayer ceramic substrate 100 according to the present exemplary embodiment may contain 0 to 5% of a glass component. In this case, the bonding agent 150 may be applied on the ceramic thin plates 110, 120, and 130, avoiding the internal electrodes 160 and the via electrodes 170. When bonding agent 150 is applied and a plurality of thin ceramic plates 110, 120, 130 are laminated and then heat treated, some glass components contained in the internal electrode 160 are exposed on the upper surface of the conductive paste to form a thin glass layer. By doing so, the plurality of thin ceramic plates 110, 120, 130 can be bonded more strongly. Further, some glass components included in the internal electrode 160 may be present under the conductive paste to enhance adhesion between the ceramic thin plate of the corresponding layer and the internal electrode.

Referring to FIG. 3B, in the multilayer ceramic substrate 100 manufactured by the above-described step, the second ceramic thin plate 120 is stacked on the first ceramic thin plate 110, and the second ceramic thin plate ( A third ceramic thin plate 130 is stacked on top of 120, and has a shape that is convex downward as a whole. The first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are electrically connected (connected) to each other by via holes 170 communicated between layers, and the first ceramic thin plate 110 and the The second thin ceramic plate 120 is made of a material having a coefficient of thermal expansion greater than that of the material constituting the third thin ceramic plate 130. An external electrode 140 is formed on a lower surface of the first ceramic thin plate 110 and an internal electrode 160 is formed on the upper surface, and a via hole 170 penetrating the upper and lower surfaces and filled with a conductive paste therein Is formed. An internal electrode 160 is formed on an upper surface of the second ceramic thin plate 120, and a via hole 170 is formed that penetrates the upper and lower surfaces and is filled with a conductive paste therein. An external electrode 140 is formed on an upper surface of the third ceramic thin plate 130, and a via hole 170 filled with a conductive paste is formed therein, passing through the upper and lower surfaces. A bonding layer 150 is formed between the first ceramic thin plate 110 and the second ceramic thin plate 120 and between the second ceramic thin plate 120 and the third ceramic thin plate 130. The bonding layer 150 refers to a layer formed by melting and solidifying a bonding agent applied on top of each ceramic thin plate by a heat treatment process to bond the laminated ceramic thin plates to each other. The bonding layer 150 is partitioned by via holes 170 communicated between layers. That is, the bonding layer 150 does not exist where the connected via hole 170 is located.

When the multilayer ceramic substrate 100 according to the first embodiment of the present invention is used as a space transformer in a probe card, it has superior durability compared to a conventional multilayer ceramic substrate. The following is an example of testing the durability of a space transformer composed of a multilayer ceramic substrate 100 according to the present embodiment.

Experimental example

A semiconductor chip is tested for defects by using a space transformer composed of the multilayer ceramic substrate 100 according to the present embodiment at room temperature in an atmospheric environment.

Example

A specific configuration of the multilayer ceramic substrate 100 used in this experiment is as follows. The coefficient of thermal expansion of the first ceramic thin plate 110 is 7 μm/(℃.m), the coefficient of thermal expansion of the second ceramic thin plate 120 is 5 μm/(℃.m), and the coefficient of thermal expansion of the third ceramic thin plate 130 Is 3 μm/(℃.m), and the material of the internal electrode is Ag and the thickness is 5 microns. The material of the external electrode is Ag and the thickness is 5 microns. The material of the via electrode is Ag, and the diameter is 60 microns. The ceramic sheets are 120 microns thick and 300 millimeters in diameter. The material of the bonding layer is glass, and the thickness is 5 to 20 microns. The multilayer ceramic substrate 100 has a downward convex shape, and the center point of the lower surface of the multilayer ceramic substrate 100 (a part connected to the interposer) is spaced 30 microns downward based on the positions of both end points of the lower surface. It is located in the branch.

Comparative example

The coefficients of thermal expansion of the ceramic thin plates constituting the multilayer ceramic substrate according to the comparative example were all the same as 7 µm/(℃.m), and the remaining conditions were the same as those of the example. Unlike the embodiment, the multilayer ceramic substrate according to the comparative example is not convex downward and has a flat shape.

Result

Example Comparative example Number of normal tests performed before failure of the space transformer No. 30,205 15,010 times The amount of deformation of the space transformer when the space transformer is fastened to the pogo pin and support of the interposer. 1 micron 20 micron

When the space transformer is fastened to the pogo pin and the support of the interposer, the amount of deformation of the space transformer is the position of the center point based on the position of both end points of the end surface of the space transformer (the surface with the probe pin in contact with the semiconductor chip). As an indication of the amount of change, it was measured how much downward the position of the center point of the end face of the transformer moved downward from the position of the center point of the end face of the transformer at the start of the test (when fastening). According to the experimental results, when the space transformer was fastened to the pogo pin of the interposer and the support, the amount of deformation of the space transformer according to the present example was only about 1/20 of that of the comparative example. Through the above experiment, when the shape of the multilayer ceramic substrate 100 according to the present embodiment is fastened to the pogo pin and the support of the interposer, the force applied from the interposer is distributed, and the multilayer ceramic substrate 100 is located in the center of the multilayer ceramic substrate 100. It was confirmed that the amount of deformation of Space Transformo was reduced by canceling the concentrated force.

In addition, when the performance of the semiconductor chip was tested with the probe card using the multilayer ceramic substrate 100 according to the present embodiment as a space transformer, 30,205 tests were possible until the space transformer was damaged. On the other hand, in the case of the comparative example, the space transformer was damaged after only 15,010 tests. Through the above experiment, it was confirmed that the shape of the multilayer ceramic substrate 100 according to the present embodiment improves the durability of the multilayer ceramic substrate 100 by dispersing the force pressed from the interposer during the semiconductor chip test.

Multilayer Ceramic Substrate for Improving Interlayer Conductivity and Manufacturing Method thereof (Example 2, Example 3, Example 4)

With reference to FIGS. 4 to 7, a structure of a multilayer ceramic substrate for improving interlayer conductivity and a method of manufacturing the same according to an exemplary embodiment of the present invention will be described below.

4 is a flowchart illustrating a method of manufacturing a multilayer ceramic substrate according to a second embodiment of the present invention. 5 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a second exemplary embodiment of the present invention. The multilayer ceramic substrate 100 according to the second embodiment may mean a multilayer ceramic substrate 100 for improving interlayer conductivity.

4 to 5, the method of manufacturing the multilayer ceramic substrate 100 according to the second embodiment is a first ceramic thin plate by firing a first ceramic green sheet, a second ceramic green sheet, and a third ceramic green sheet. (110), the step of generating the second ceramic thin plate 120 and the third ceramic thin plate 130 (S3010), the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 Forming the via hole 170 in each (S3020), a conductive paste is applied to the via hole 170 formed in each of the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130. Filling and heat treatment to form the via electrode 170 (S3030), the protrusion 180 made of a conductor on the upper surface of the via electrode 170 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120 Forming the internal electrode 160 by printing a pattern with a conductive paste on the upper surfaces of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 and heat treatment (S3050), Applying a bonding agent 150 to the upper surface of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 avoiding the protrusion 180 (S3060), the protrusion formed on the first ceramic thin plate 110 ( A second ceramic thin plate 120 is stacked on the top of the first ceramic thin plate 110 so that 180 is in contact with the lower surface of the via electrode 170 formed on the second ceramic thin plate 120, and the second ceramic thin plate 120 ), a third ceramic thin plate 130 is stacked on the second ceramic thin plate 120 so that the protrusion 180 formed in the third ceramic thin plate 130 comes into contact with the lower surface of the via electrode 170 formed on the third ceramic thin plate 130. Generating the substrate 100 (S3070), bonding the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 to each other by heat-treating the multilayer ceramic substrate 100 (S3080) and/or the upper surface of the multilayer ceramic substrate 100 And forming the external electrode 140 by printing a pattern with a conductive paste on each of the lower surfaces and performing heat treatment (S3090).

Firing the first ceramic green sheet, the second ceramic green sheet, and the third ceramic green sheet to generate the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 (S3010) A detailed description of is replaced with a description of step S1010 of FIG. 2 described above.

A detailed description of the step (S3020) of forming the via hole 170 in each of the first ceramic thin plate 110, the second ceramic thin plate 120 and the third ceramic thin plate 130 (S3020) is described in step S1020 of FIG. Replace it with a description.

Filling the via holes 170 formed in each of the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 with a conductive paste and heat treatment to form the via electrode 170 (S3030) ) Is replaced with a description of step S1030 of FIG. 2 described above.

In the step (S3040) of forming the protrusion 180 made of a conductor on the upper surface of the via electrode 170 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120, the present embodiment is a first ceramic thin plate ( 110) and the top surface of the via electrode 170 formed on the second ceramic thin plate 120 may be formed with a protrusion 180. At this time, the protrusion 180 formed on the first ceramic thin plate 110 is for electrically connecting the via electrode 170 of the first ceramic thin plate 110 and the via electrode 170 of the second ceramic thin plate 120. As, it is made of a conductor. The thickness of the internal electrode 160 printed on the first ceramic thin plate 110 and the second ceramic thin plate 120 and/or applied on the first ceramic thin plate 110 and the second ceramic thin plate 120 Due to the thickness of the bonding agent 150, when the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are stacked, there is an empty space between the via electrodes 170 of the ceramic thin plates. Is generated, and the via electrodes 170 of the ceramic thin plates do not contact each other due to this empty space, so that they are not electrically connected. In order to solve this problem, in the present embodiment, a conductive protrusion 180 is formed on the upper surface of the via electrode 170 of the first ceramic thin plate 110 and the second ceramic thin plate 120 to form the vias of the ceramic thin plates. The electrodes 170 are electrically connected by contacting each other. In this case, the thickness of the protrusion 180 may have the same value as the sum of the thickness of the internal electrode 160 formed on the corresponding ceramic thin plate and the thickness of the bonding agent 150 applied on the internal electrode 160. Preferably, the thickness of the protrusion 180 may be 12 microns. Further, the side portion of the protrusion 180 may be perpendicular to the upper surface of the ceramic thin plate. The protrusion 180 is formed on the upper surface of the via electrode 170, so that the bonding agent 150 applied to the upper surface of the ceramic thin plate flows into the via electrode 170 during the heat treatment process, thereby contacting the interlayer via electrode 170. It can prevent the phenomenon that interferes with

A detailed description of the step (S3050) of forming the internal electrode 160 by printing a pattern with a conductive paste on the upper surface of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 and heat treatment (S3050) is described in FIG. 2 Substitute the description of step S1040. In this embodiment, the internal electrode 160 is formed avoiding the protrusion 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120, and the end of the internal electrode 160 formed in this way is the protrusion 180 ) In contact with the side. Accordingly, the internal electrode 160 is electrically connected to the via electrode 170 through the protrusion 180. Alternatively, the end of the internal electrode 160 is not in contact with the side surface of the protrusion 180, so that the internal electrode 160 is not electrically connected to the via electrode 170.

Detailed description of the step (S3060) of applying the bonding agent 150 to the upper surface of each of the first ceramic thin plate 110 and the second ceramic thin plate 120 avoiding the protrusion 180 (S3060) is for step S1050 of FIG. Replace with description. In this embodiment, the bonding agent 150 is applied avoiding the upper surfaces of the protrusions 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120.

The second ceramic thin plate 120 is formed on the top of the first ceramic thin plate 110 so that the protrusion 180 formed on the first ceramic thin plate 110 is in contact with the lower surface of the via electrode 170 formed on the second ceramic thin plate 120. ) Is stacked, and the protrusion 180 formed on the second ceramic thin plate 120 is formed on the top of the second ceramic thin plate 120 so that the protrusion 180 formed on the third ceramic thin plate 130 comes into contact with the lower surface of the via electrode 170 formed on the third ceramic thin plate 130. 3 In the step of laminating the ceramic thin plates 130 to generate the multilayer ceramic substrate 100 (S3070), in the present embodiment, the via electrodes 170 and the protrusions 180 formed on the respective ceramic thin plates 110, 120, 130 The ceramic thin plates 110, 120, and 130 may be stacked to form a straight line so that electrical signals can be transmitted from the lower surface of the first ceramic thin plate 110 to the upper surface of the third ceramic thin plate 130. That is, the upper surface of the protrusion 180 of the first ceramic thin plate 110 is in contact with the lower surface of the via electrode 170 of the second ceramic thin plate 120, and the protrusion 180 of the second ceramic thin plate 120 The ceramic thin plates 110, 120, and 130 may be stacked so that the upper surface of is in contact with the lower surface of the via electrode 170 of the third ceramic thin plate 130. Accordingly, the ceramic thin plates 110, 120, and 130 may be electrically connected to each other through the via electrode 170 and the protrusion 180 in communication. That is, the internal electrode 160 formed on the first ceramic thin plate 110 may be electrically connected to the internal electrode 160 formed on the second ceramic thin plate 120 through the via electrode 170 and the protrusion 180. Finally, the external electrode 140 formed on the lower surface of the first ceramic thin plate 110 is formed through the via electrode 170 and the protrusion 180 formed in each layer, and the internal electrode 160 and the third It may be electrically connected to the external electrode 140 formed on the upper surface of the ceramic thin plate 130. A pogo pin-shaped interposer probe may be connected to the external electrode 140 formed on the lower surface of the first ceramic thin plate 110, and the external electrode 140 formed on the upper surface of the third ceramic thin plate 130 A probe pin to be in contact with a semiconductor chip to be tested may be connected. A structure in which a plurality of thin ceramic plates 110, 120, and 130 are stacked by this step may mean a multilayer ceramic substrate 100.

In the step of bonding the first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 to each other by heat treating the multilayer ceramic substrate 100 (S3080), the present embodiment A plurality of laminated ceramic thin plates by melting the bonding agent applied to the upper surface of the ceramic thin plates 110, 120 by firing or heat treating the multilayer ceramic substrate 100 formed by stacking the thin plates 110, 120, 130 and cooling them again (110, 120, 130) can be bonded to each other.

A detailed description of the step (S3090) of forming the external electrode 140 by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate 100 and heat treatment (S3090) is replaced with the description of S1080 of FIG. .

Referring to FIG. 5, in the multilayer ceramic substrate 100 manufactured by the above-described step, the second ceramic thin plate 120 is stacked on the first ceramic thin plate 110, and the second ceramic thin plate 120 is The third ceramic thin plate 130 is stacked on the via electrode 170 formed on each of the ceramic thin plates 110, 120, and 130, and the protrusion 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120. ) Are laid on a straight line and are stacked to contact each other. The first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are electrically connected (connected) to each other by the via electrode 170 and the protrusion 180 formed on each ceramic thin plate. An external electrode 140 is formed on a lower surface of the first ceramic thin plate 110 and an internal electrode 160 is formed on the upper surface, and a via hole 170 penetrating the upper and lower surfaces and filled with a conductive paste therein Is formed. An internal electrode 160 is formed on an upper surface of the second ceramic thin plate 120, and a via hole 170 is formed that penetrates the upper and lower surfaces and is filled with a conductive paste therein. An external electrode 140 is formed on an upper surface of the third ceramic thin plate 130, and a via hole 170 filled with a conductive paste is formed therein, passing through the upper and lower surfaces. A bonding layer 150 is formed between the first ceramic thin plate 110 and the second ceramic thin plate 120 and between the second ceramic thin plate 120 and the third ceramic thin plate 130. The bonding layer 150 refers to a layer formed by melting and solidifying a bonding agent applied on top of each ceramic thin plate by a heat treatment process to bond the laminated ceramic thin plates to each other. The bonding layer 150 is partitioned by the protrusions 180 formed in the first ceramic thin plate 110 and the second ceramic thin plate 120. That is, the bonding layer 150 does not exist where the protrusion 180 is located.

6 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a third embodiment of the present invention. The multilayer ceramic substrate 100 according to the third embodiment may mean a multilayer ceramic substrate 100 for improving interlayer conductivity.

Referring to FIG. 6, in the present embodiment, a point spaced apart from the outer periphery of the protrusion 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120 by a predetermined distance and the outer side of the protrusion 180 The bonding agent 150 may be applied to avoid the region 190 between the peripheries and the upper surface of the protrusion 180. That is, an empty space 190 may be formed therebetween so that the protrusion 180 and the bonding agent 150 do not directly contact each other. Accordingly, it is possible to prevent a phenomenon in which the bonding agent 150 and the material of the protrusion 180 cause a chemical reaction to lower the electrical conductivity of the protrusion 180. The multilayer ceramic substrate 100 according to the third embodiment of the present invention includes an empty space 190 between the protrusion 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120 and the bonding layer 150. Is formed. In this case, the distance between the protrusion 180 and the bonding layer 150 may be 5 to 10 microns.

7 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a fourth embodiment of the present invention. The multilayer ceramic substrate 100 according to the fourth embodiment may mean a multilayer ceramic substrate 100 for improving interlayer conductivity.

Referring to FIG. 7, in this embodiment, a point spaced apart from the outer periphery of the protrusion 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120 by a predetermined distance and the outer periphery of the protrusion 180 A solid layer 200 made of ceramic may be formed in the interposed region 190. That is, an empty space 190 is formed therebetween so that the protrusion 180 and the bonding agent 150 do not directly contact, and in order to more reliably prevent contact between the bonding agent 150 and the protrusion 180, the empty space 190 ) In the solid layer 200 may be formed. At this time, the solid film 200 may be in contact with the bonding agent 150 or the side surface of the protrusion 180 within the empty space 190, and does not contact both the bonding agent 150 and the protrusion 180. Can be formed in position. The solid film 200 may be made of an inorganic ceramic that does not dissolve at a temperature at which the bonding agent is dissolved, and may be made of a material that does not cause a chemical reaction with the material of the protrusion 180. Accordingly, a phenomenon in which the bonding agent 150 flows into the protrusion 180 and causes a chemical reaction with each other is more reliably prevented, thereby preventing a phenomenon that the electrical conductivity of the protrusion 180 decreases. The multilayer ceramic substrate 100 according to the fourth exemplary embodiment of the present invention includes an empty space 190 between the protrusion 180 formed on the first ceramic thin plate 110 and the second ceramic thin plate 120 and the bonding layer 150. Is formed, and a solid layer 2000 may be formed between the formed empty spaces 190. The thickness of the solid layer 200 may be the same as the thickness of the bonding layer 150.

Multilayer ceramic substrate for improving interlayer adhesion and manufacturing method thereof (Fifth, 6th, 7th)

A structure of a multilayer ceramic substrate for improving interlayer adhesiveness according to an embodiment of the present invention and a method of manufacturing the same will be described below with reference to FIGS. 8 to 11.

8 is a flowchart illustrating a method of manufacturing a multilayer ceramic substrate according to a fifth embodiment of the present invention. And, FIG. 9 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a fifth embodiment of the present invention. The multilayer ceramic substrate 100 according to the fifth embodiment may refer to a multilayer ceramic substrate 100 for improving interlayer adhesion.

8 to 9, the method of manufacturing the multilayer ceramic substrate 100 according to the fifth embodiment is a first ceramic thin plate by firing a first ceramic green sheet, a second ceramic green sheet, and a third ceramic green sheet. , Generating a second ceramic thin plate and a third ceramic thin plate (S7010), forming a via hole and a groove in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate (S7020), the Filling and heat-treating via holes formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate to form a via electrode (S7030), the first ceramic thin plate and the second ceramic thin plate Step of forming internal electrodes by printing a pattern with a conductive paste on each upper surface and heat treatment (S7040), filling a bonding agent in grooves formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate Step (S7050), applying a bonding agent to the upper surfaces of each of the first ceramic thin plate and the second ceramic thin plate to avoid via holes (S7060), wherein the upper surface of the via electrode formed on the first ceramic thin plate is The upper portion of the first ceramic thin plate is in contact with the lower surface of the via electrode formed on the second ceramic thin plate and the upper surface of the via electrode formed on the second ceramic thin plate is in contact with the lower surface of the via electrode formed on the third ceramic thin plate. Stacking the second ceramic thin plate on and stacking the third ceramic thin plate on the second ceramic thin plate to generate a multilayer ceramic substrate (S7070), the first ceramic thin plate by heat-treating the multilayer ceramic substrate, Bonding the second ceramic thin plate and the third ceramic thin plate to each other (S7080) and/or forming an external electrode by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate and heat treatment (S7090) ) Can be included.

A detailed description of the step (S7010) of firing the first ceramic green sheet, the second ceramic green sheet, and the third ceramic green sheet to generate the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate is S1010 of FIG. Replace with a description of the step.

In the step (S7020) of forming via holes and grooves in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate (S7020), in the present embodiment, one or more via holes are formed in the ceramic thin plates 110, 120, and 130. 170 and one or more grooves 230 may be formed. 9 is a view showing the state of the finally manufactured multilayer ceramic substrate 100, the via holes 170 formed in the first ceramic thin plate 110, the second ceramic thin plate 120 and the third ceramic thin plate 130 It represents a state in communication with each other and a state in which the grooves 230 are combined with a bonding layer formed between layers, and a via hole 170 and a groove 230 are formed in each of the ceramic thin plates 110, 120, and 130. In this case, the via hole 170 and/or the groove 230 may be formed through a process such as laser irradiation or chemical etching. The diameter of the via hole 170 and/or the groove 230 may be 30 to 200 microns. Via holes 170 and/or grooves 230 formed in the same ceramic thin plate may have the same diameter. Further, the groove 230 may be formed at a point where interlayer adhesion is weak, or at a point where the internal electrode 160, the via hole 170, and/or the external electrode 140 are not formed.

A detailed description of the step (S7030) of forming a via electrode by filling and heat-treating via holes formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate is described in step S1030 of FIG. Replace it with a description.

A detailed description of the step (S7040) of forming an internal electrode by printing a pattern with a conductive paste on the upper surface of each of the first ceramic thin plate and the second ceramic thin plate and heat treatment (S7040) is replaced with the description of step S1040 of FIG. .

In the step (S7050) of filling the grooves formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate (S7050), the present embodiment is a groove formed in the ceramic thin plates 110, 120, 130 A bonding agent may be filled in 230. In this case, the bonding agent filled in the groove 230 may be the same as or different from the bonding agent 150 applied on the ceramic thin plates 110 and 120. In this case, the bonding agent filled in the groove 230 may be an inorganic material and/or an organic material, the inorganic material may include glass, ceramic, and the like, and the organic material may include epoxy or the like.

A detailed description of the step (S7060) of applying a bonding agent to the upper surface of each of the first ceramic thin plate and the second ceramic thin plate avoiding the via hole (S7060) is replaced with the description of step S1050 of FIG. 2. In this embodiment, the bonding agent 150 is applied to the upper surfaces of the ceramic thin plates 110 and 120 avoiding the groove 230 as well as the via hole 170.

Via electrodes formed on the third ceramic thin plate, wherein an upper surface of the via electrode formed on the first ceramic thin plate is in contact with a lower surface of the via electrode formed on the second ceramic thin plate, and an upper surface of the via electrode formed on the second ceramic thin plate is formed on the third ceramic thin plate In the step (S7070) of generating a multilayer ceramic substrate by stacking the second ceramic thin plate on the top of the first ceramic thin plate and laminating the third ceramic thin plate on the second ceramic thin plate so as to contact the lower surface of the , This embodiment is a ceramic thin plate so that the via electrode 170 formed on each ceramic thin plate 110, 120, 130 forms a straight line from the lower surface of the first ceramic thin plate 110 to the upper surface of the third ceramic thin plate 130. (110, 120, 130) can be stacked. That is, the upper surface of the via electrode 170 of the first ceramic thin plate 110 is in contact with the lower surface of the via electrode 170 of the second ceramic thin plate 120, and the via electrode of the second ceramic thin plate 120 ( The ceramic thin plates 110, 120, and 130 may be stacked so that the upper surface of 170 is in contact with the lower surface of the via electrode 170 of the third ceramic thin plate 130. Accordingly, the ceramic thin plates 110, 120, and 130 may be electrically connected to each other through the via electrode 170 in communication, and the layers may be more strongly bonded through the grooves 230 in contact with each other through the bonding layer 150. have. That is, the laminated ceramic thin plates 110, 120, and 130 are strongly adhered to each other, and finally, the external electrode 140 formed on the lower surface of the first ceramic thin plate 110 is through the via electrode 170, The internal electrode 160 of each layer and the external electrode 140 formed on the upper surface of the third ceramic thin plate 130 may be electrically connected. The probe of the interposer may be connected to the external electrode 140 formed on the lower surface of the first ceramic thin plate 110, and the external electrode 140 formed on the upper surface of the third ceramic thin plate 130 is a semiconductor chip to be tested. A probe pin to be in contact with may be connected. A structure in which a plurality of thin ceramic plates 110, 120, and 130 are stacked by this step may mean a multilayer ceramic substrate 100.

In the step of bonding the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate to each other by heat-treating the multilayer ceramic substrate (S7080), the present embodiment includes a plurality of ceramic thin plates 110, 120, and 130 The multilayer ceramic substrate 100 is fired or heat treated to melt the bonding agent 150 applied to the upper surfaces of the ceramic thin plates 110 and 120 and the bonding agent filled in the grooves 230, and then cooled again. The ceramic thin plates 110, 120, and 130 may be bonded to each other. At this time, the bonding agents filled in the grooves 230 of each ceramic thin plate 110, 120, 130 are made of the same material, and as adhesion between the same materials is made by lamination and heat treatment, each layer is stronger with each other. Can be glued.

A detailed description of the step (S7090) of forming an external electrode by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate and heat treatment (S7090) is replaced with the description of step S1080 of FIG. 2.

Referring to FIG. 9, in the multilayer ceramic substrate 100 manufactured by the above-described step, a second ceramic thin plate 120 is stacked on an upper portion of the first ceramic thin plate 110, and an upper portion of the second ceramic thin plate 120. A third ceramic thin plate 130 is stacked on the layer, and via electrodes 170 formed on each of the ceramic thin plates 110, 120, and 130 are stacked so as to be in a straight line and contact each other. The first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are electrically connected (connected) to each other by via electrodes 170 formed on each ceramic thin plate. An external electrode 140 is formed on a lower surface of the first ceramic thin plate 110 and an internal electrode 160 is formed on the upper surface, and a via hole 170 penetrating the upper and lower surfaces and filled with a conductive paste therein And a groove 230 penetrating the upper and lower surfaces and filled with a bonding agent therein. An internal electrode 160 is formed on the upper surface of the second ceramic thin plate 120, penetrating the upper and lower surfaces, and penetrating the via hole 170 filled with a conductive paste and the upper and lower surfaces, and In the groove 230 filled with a bonding agent is formed. The external electrode 140 is formed on the upper surface of the third ceramic thin plate 130 and penetrates the upper surface and the lower surface, and penetrates the via hole 170 filled with conductive paste and the upper surface and the lower surface, and the inside is A groove 230 filled with a bonding agent is formed. A bonding layer 150 is formed between the first ceramic thin plate 110 and the second ceramic thin plate 120 and between the second ceramic thin plate 120 and the third ceramic thin plate 130. The bonding layer 150 refers to a layer formed by melting and solidifying a bonding agent applied on top of each ceramic thin plate by a heat treatment process to bond the laminated ceramic thin plates to each other. The bonding layer 150 is partitioned by via holes 170 communicated between layers. That is, the bonding layer 150 does not exist where the via hole 170 communicated is located.

According to the sixth embodiment of the present invention, the second via hole 210 may be formed in the ceramic thin plates instead of the groove 230 in the fifth embodiment. In this embodiment, the second via hole 210 functions as the groove 230, and the first via hole refers to the via hole 170.

According to the present exemplary embodiment, the method of manufacturing the multilayer ceramic substrate 100 according to the sixth exemplary embodiment comprises firing a first ceramic green sheet, a second ceramic green sheet, and a third ceramic green sheet to form a first ceramic thin plate and a second ceramic green sheet. Generating a ceramic thin plate and a third ceramic thin plate, forming a first via hole and a second via hole in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate, the first ceramic thin plate , Filling a conductive paste in a first via hole formed in each of the second ceramic thin plate and the third ceramic thin plate and heat-treating to form a via electrode, on the upper surface of each of the first ceramic thin plate and the second ceramic thin plate Printing a pattern with a conductive paste and heat treatment to form an internal electrode, filling a second via hole formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate with a bonding agent, 1 Applying a bonding agent to an upper surface of each of the ceramic thin plate and the second ceramic thin plate, avoiding the first via hole, wherein the upper surface of the via electrode formed on the first ceramic thin plate is formed on the second ceramic thin plate. The second ceramic thin plate is stacked on top of the first ceramic thin plate so that the upper surface of the via electrode formed on the second ceramic thin plate is in contact with the lower surface and the upper surface of the via electrode formed on the third ceramic thin plate is in contact with the lower surface of the via electrode. Generating a multilayer ceramic substrate by stacking the third ceramic thin plate on the second ceramic thin plate, and heat-treating the multilayer ceramic substrate to make the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate mutually Bonding and/or printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate and heat treatment to form an external electrode.

Referring to FIG. 10, in the multilayer ceramic substrate 100 manufactured by the above-described step, a second ceramic thin plate 120 is stacked on an upper portion of the first ceramic thin plate 110, and an upper portion of the second ceramic thin plate 120. A third ceramic thin plate 130 is stacked on the layer, and via electrodes 170 formed on each of the ceramic thin plates 110, 120, and 130 are stacked so as to be in a straight line and contact each other. The first ceramic thin plate 110, the second ceramic thin plate 120, and the third ceramic thin plate 130 are electrically connected (connected) to each other by via electrodes 170 formed on each ceramic thin plate. An external electrode 140 is formed on a lower surface of the first ceramic thin plate 110 and an internal electrode 160 is formed on the upper surface, and a first via hole penetrating the upper and lower surfaces and filled with a conductive paste ( 170) and a second via hole 210 that passes through the upper and lower surfaces and is filled with a bonding agent therein. The internal electrode 160 is formed on the upper surface of the second ceramic thin plate 120, penetrates the upper surface and the lower surface, and penetrates the first via hole 170 filled with a conductive paste and the upper and lower surfaces thereof. And a second via hole 210 filled with a bonding agent is formed therein. An external electrode 140 is formed on the upper surface of the third ceramic thin plate 130 and penetrates the upper and lower surfaces, and penetrates the first via hole 170 filled with a conductive paste and the upper and lower surfaces thereof. A second via hole 210 filled with a bonding agent is formed inside. A bonding layer 150 is formed between the first ceramic thin plate 110 and the second ceramic thin plate 120 and between the second ceramic thin plate 120 and the third ceramic thin plate 130. The bonding layer 150 refers to a layer formed by melting and solidifying a bonding agent applied on top of each ceramic thin plate by a heat treatment process to bond the laminated ceramic thin plates to each other. The bonding layer 150 is partitioned by a first via hole 170 communicated between layers. That is, the bonding layer 150 does not exist where the communicating first via hole 170 is located.

11 is a cross-sectional view showing the structure of a multilayer ceramic substrate according to a seventh embodiment of the present invention. The multilayer ceramic substrate 100 according to the seventh embodiment may mean a multilayer ceramic substrate 100 for improving interlayer adhesion.

Referring to FIG. 11, in the present embodiment, a protrusion 220 is provided on the upper surface of the first ceramic thin plate 110, the upper and lower surfaces of the second ceramic thin plate 120, and the lower surface of the third ceramic thin plate 130. Can be formed. At this time, the protrusion 220 is formed avoiding the internal electrode 160 and the via hole 170 and the groove 230 on the upper surface of the first ceramic thin plate 110 and the upper surface of the second ceramic thin plate 120, It is formed avoiding the via hole 170 and the groove 230 on the lower surface of the second ceramic thin plate 120 and the lower surface of the third ceramic thin plate 130. Further, in the present embodiment, in step S7060, the bonding agent 150 is applied to the upper surface of the first ceramic thin plate 110 and the surface of the protrusion 220 formed on the upper surface of the second ceramic thin plate 120. As a result, the surface area of the ceramic thin plates 110, 120, and 130 in contact with the bonding agent 150 may increase, thereby improving interlayer adhesion. Further, the protrusion 220 and the bonding agent 150 may include the same material. In this case, the protrusion 220 and the bonding agent 150 are further formed through a chemical reaction between the protrusion 220 and the bonding agent 150. It can be bonded strongly, thereby further enhancing the interlayer adhesion. For example, bonding agent 150 and the projection 220 both may include SiO _2, a SiO ₂ of the bonding agent 150 is SiO ₂ and the projection portion 220 of the can by a chemical reaction to be bonded strongly to each other . Furthermore, the height of the protrusion 220 may be 1 to 10 microns. In the multilayer ceramic substrate 100 according to the seventh embodiment of the present invention, an upper surface of the first ceramic thin plate 110, an upper surface and a lower surface of the second ceramic thin plate 120, and a lower portion of the third ceramic thin plate 130 A plurality of protrusions 220 are formed on the surface, and all protruding surfaces of the protrusions 220 are in contact with the bonding agent 150. That is, the formed protrusion 220 is inserted into the bonding layer 150.

In the present embodiment, both the protrusion 220 and the bonding agent 150 include the same material (for example, SiO ₂ ), but the protrusion 220 constitutes a ceramic thin plate, and has a melting point more than that of the bonding agent 150 It is made of high material. That is, since the melting points of the protrusion 220 and the bonding agent 150 are different from each other, the state of the protrusion 220 is not changed in the process of bonding the ceramic thin plates by melting (heat treatment) the bonding agent 150. For example, the melting point of the protrusion 220 may be 1100°C, and the melting point of the bonding agent 150 may be 700°C.

The scope of protection of the present invention is not limited to the description and expression of the embodiments explicitly described above. In addition, it is added once again that the scope of protection of the present invention may not be limited due to obvious changes or substitutions in the technical field to which the present invention pertains.

100: multilayer ceramic substrate 110: first ceramic thin plate
120: second ceramic sheet 130: third ceramic sheet
140: external electrode 150: bonding agent, bonding layer
160: internal electrode 170: via electrode, via hole, first via hole
180: protrusion 190: empty space
200: solid film 210: second via hole
220: protrusion 230: groove

Claims (5)

A step of firing the first ceramic green sheet, the second ceramic green sheet, and the third ceramic green sheet to produce a first ceramic thin plate, a second ceramic thin plate, and a third ceramic thin plate,
The first ceramic green sheet and the second ceramic green sheet are made of a material having a thermal expansion coefficient greater than that of a material constituting the third ceramic green sheet;
Forming via holes in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate;
Filling a via hole formed in each of the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate with a conductive paste and performing heat treatment to form a via electrode;
Forming internal electrodes by printing a pattern with a conductive paste on top surfaces of each of the first ceramic thin plate and the second ceramic thin plate and heat treatment;
Applying a bonding agent to an upper surface of each of the first ceramic thin plate and the second ceramic thin plate to avoid via holes;
The second ceramic thin plate is laminated on the first ceramic thin plate so that the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate are electrically connected to each other, and the third ceramic thin plate is formed on the second ceramic thin plate. Stacking the ceramic thin plates to create a multilayer ceramic substrate;
Heat treating the multilayer ceramic substrate to form a downwardly convex shape; And
Forming an external electrode by printing a pattern with a conductive paste on each of the upper and lower surfaces of the multilayer ceramic substrate and heat treatment;
Including,
The step of heat treating the multilayer ceramic substrate to form a downwardly convex shape,
The bonding agent is melted and cooled again to bond the laminated first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate to each other,
The coefficient of thermal expansion of the first ceramic thin plate positioned on the lowermost layer of the multilayer ceramic substrate is greater than that of the second ceramic thin plate stacked on the first ceramic thin plate, and the coefficient of thermal expansion of the second ceramic thin plate is the multilayer ceramic substrate It is configured to be greater than the coefficient of thermal expansion of the third ceramic thin plate located on the uppermost layer of,
The multilayer ceramic substrate,
A method of manufacturing a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, characterized in that it is bonded by the heat treatment and has a convex downward shape. The method according to claim 1,
The coefficient of thermal expansion of the first ceramic sheet is 5 to 7 µm/(℃.m), the coefficient of thermal expansion of the second ceramic sheet is 3 to 5 µm/(℃.m), and the coefficient of thermal expansion of the third ceramic sheet is 1 A method for manufacturing a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, characterized in that it has a range of 3 μm/(°C.m). The method according to claim 1,
In the step of forming a downwardly convex shape by heat treatment of the multilayer ceramic substrate, the center point of the lower surface of the multilayer ceramic substrate moves 20 to 50 microns downward based on the positions of both end points of the lower surface of the multilayer ceramic substrate A method for manufacturing a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, characterized in that the convex shape is formed downward. The method according to claim 1,
The bonding agent applied to the upper surface of the second ceramic thin plate contains a glass component and adheres the lower surface of the third ceramic thin plate having a different coefficient of thermal expansion than the second ceramic thin plate to the upper surface of the second ceramic thin plate. A method for manufacturing a multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, characterized in that. A first ceramic thin plate having an external electrode formed on a lower surface, an internal electrode formed on an upper surface, and penetrating the upper surface and the lower surface, and having a via hole filled with a conductive paste therein;
A second ceramic thin plate stacked on the first ceramic thin plate, wherein an internal electrode is formed on an upper surface thereof, and a via hole filled with a conductive paste is formed therein while passing through the upper surface and the lower surface; And
A third ceramic thin plate stacked on the second ceramic thin plate, wherein an external electrode is formed on an upper surface thereof, and a via hole filled with a conductive paste is formed therein while passing through the upper surface and the lower surface,
A bonding layer partitioned by via holes communicated between layers is formed between the first ceramic thin plate and the second ceramic thin plate and between the second ceramic thin plate and the third ceramic thin plate,
The first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate are electrically connected to each other, and the first ceramic thin plate and the second ceramic thin plate are smaller than the thermal expansion coefficient of the material constituting the third ceramic thin plate. It is composed of a material having a coefficient of thermal expansion,
The multilayer ceramic substrate formed by stacking the first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate is characterized in that it has a downwardly convex shape,
The laminated first ceramic thin plate, the second ceramic thin plate, and the third ceramic thin plate are melted by a heat treatment process in which the bonding agent applied to the upper surfaces of the first ceramic thin plate and the second ceramic thin plate avoiding the via hole Are bonded to each other by the bonding layer formed by cooling again,
The first ceramic thin plate has a thermal expansion coefficient greater than that of the second ceramic thin plate, and the second ceramic thin plate has a thermal expansion coefficient greater than that of the third ceramic thin plate,
A multilayer ceramic substrate having upper and lower surfaces having different coefficients of thermal expansion, wherein the substrate is bonded by the heat treatment and has a downwardly convex shape.

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