KR102211304B1 - Method for manufacturing gallium nitride thin film - Google Patents

Abstract

While introducing a sputtering gas and nitrogen gas to form a gallium nitride thin film with good crystallinity, the target 33 of gallium nitride is reactively sputtered, and at the same time, nitrogen radicals 48 are transferred from the radical gun unit 40 toward the substrate 22. While emitting, a thin film is formed on the surface of the substrate 22. It is nitrided on both the target 33 side and the substrate 22 side to form a gallium nitride thin film with good crystallinity.

Description

Method for manufacturing gallium nitride thin film

The present invention relates to a method for producing a gallium nitride thin film, and in particular, to a method for producing a gallium nitride thin film having good crystal orientation.

Currently, gallium nitride thin films are used for LEDs or semiconductors for wireless communication, and in order to improve the characteristics of electronic devices using gallium nitride thin films, research and development of a method for obtaining a thin film having good crystallinity is being developed.

Patent Document 1 below describes a technique for growing a gallium nitride thin film by a reactive sputtering method, and Patent Document 2 describes a method for producing a gallium nitride thin film using a radical. Further, in Patent Document 3 below, a reactive sputtering method using an ion beam is described, and it can be considered that the crystallinity is improved, but a technique to further improve the crystallinity is required.

7 is a graph showing the relationship between the partial pressure of nitrogen gas and the nitrogen content of the formed thin film when sputtering a metal gallium target to form a gallium nitride thin film, in which a radical reaction is dominant in the partial pressure of nitrogen gas in region A. The thin film is a gallium thin film, and the reactive sputtering reaction is dominant at the partial pressure of nitrogen gas in the region B, and the formed thin film is a gallium nitride thin film but has poor orientation.

[Patent Document 1] WO2007 / 108266 [Patent Document 2] Japanese Patent Laid-Open No. 2013-125851 [Patent Document 3] Japanese Patent Application Laid-Open No. 2017-201050

An object of the present invention is to obtain a gallium nitride thin film having good crystallinity.

In order to solve the above problem, the present invention is an invention of forming a gallium nitride thin film having excellent orientation by performing a reactive sputtering portion while irradiating nitrogen gas radicals in a region C of FIG. 7. Gallium nitride, which forms a gallium nitride thin film by sputtering a target of metal gallium by a plasma of a mixed gas containing nitrogen gas and sputtering gas while irradiating nitrogen radicals on a substrate placed in a vacuum tank to reach the substrate. It is a method of manufacturing a thin film.

The present invention is a method of manufacturing a gallium nitride thin film in which the target faces the substrate and is disposed in a barrier plate container, and the sputtering gas and the nitrogen gas are introduced into the barrier plate container.

The present invention is a method of manufacturing a gallium nitride thin film in which a filter for removing ions of nitrogen gas is disposed at the discharge port.

In the present invention, the value of the partial pressure of the source gas, which is the partial pressure value of the nitrogen gas introduced into the radical gun, inside the vacuum tank is the value of the partial pressure of the reaction gas, which is the partial pressure of nitrogen gas contained in the mixed gas, and the partial pressure of the source gas. This is a method for producing a gallium nitride thin film in the range of 38% or more and 63% or less based on the sum of the values.

In the present invention, when the substrate is heated to 300° C. or more and 500° C. or less, the value of the partial pressure of the source gas, which is the partial pressure value of the nitrogen gas introduced into the radical drying unit, inside the vacuum chamber is that of the nitrogen gas contained in the mixed gas. This is a method for producing a gallium nitride thin film in a range of 38% or more and 50% or less with respect to the sum of the partial pressure value of the reaction gas partial pressure and the value of the source gas partial pressure.

When the gallium nitride crystal is grown, nitride is promoted on both the target side and the substrate side, so that a gallium nitride thin film with good crystallinity can be obtained.

1 is a film forming apparatus used in the present invention.
2 is a diagram for explaining a positional relationship between a substrate and a gallium nitride thin film.
3 is a graph showing the relationship between the nitrogen gas pressure and the full width at half value.
4 is a graph showing the relationship between the nitrogen gas pressure and the growth rate.
5 is an example of an LED using a gallium nitride thin film manufactured by the present invention.
6 is another example of a film forming apparatus used in the present invention.
7 is a graph showing the relationship between the nitrogen partial pressure and the nitrogen content in the formed thin film.

Referring to Fig. 1, reference numeral 2 has a vacuum tank 10 as a film forming apparatus used in the present invention.

Inside the vacuum bath 10, a substrate placement unit 20, a reactive sputtering unit 30, and a radical gun unit 40 are provided.

The substrate arranging unit 20 has a substrate holder 21 on which the substrate 22 is placed, and a heater 23 for heating the substrate 22 placed on the substrate holder 21.

The substrate holder 21 is installed on the ceiling of the vacuum bath 10, and the heater 23 is fixed to the ceiling so as to be positioned between the back surface of the substrate 22 disposed on the substrate holder 21 and the ceiling.

The reactive sputter unit 30 and the radical gun unit 40 are disposed below the substrate holder 21, and the surface of the substrate 22 disposed on the substrate holder 21 is the reactive sputter unit 30 and the radical It faces downward to face the key part 40.

The substrate holder 21 may be installed on the wall or bottom surface of the vacuum bath 10, not on the ceiling, and the reactive sputter unit 30 and the radical gun unit 40 may be installed at a position opposite to the substrate holder 21. .

The reactive sputter unit 30 has a barrier plate container 31, and a sputter electrode 32 is disposed inside the barrier plate container 31. The sputter electrode 32 has a container-like shape, and a target 33 made of gallium metal is disposed in the container serving as the sputter electrode 32.

The barrier plate container 31 has a discharge port 37, and the opening 34 of the sputter electrode 32 and the discharge port 37 of the barrier plate container 31 are in communication. The target 33 is arranged so as to face the substrate 22 disposed on the substrate holder 21 through the openings 34 and discharge ports 37.

A sputter power supply 35 and a heating power supply 28 are disposed outside the vacuum bath 10.

The sputter electrode 32 is connected to the sputter power supply 35, the vacuum bath 10 is connected to a ground potential, and when the sputter power supply 35 operates, a sputter voltage is applied to the sputter electrode 32, and a heating power supply When (28) operates, the heater 23 is energized and generates heat.

A gas supply device 15 is disposed outside the vacuum tank 10. The gas supply device 15 includes a sputter gas source 26 for supplying sputtering gas, a reactive gas source 27 for supplying a reactive gas, and a mixer connected to the sputtering gas source 26 and the reactive gas source 27 ( 36).

The mixer 36 is connected to the barrier plate container 31, and the sputtering gas and the reactive gas are respectively supplied from the sputtering gas source 26 and the reactive gas source 27 to the mixer 36 at a desired flow rate, and the supplied The sputtering gas and the reactive gas are mixed in the mixer 36 to become a mixed gas, and are supplied into the interior of the barrier plate container 31.

As the sputtering gas, a rare gas (inert gas) such as argon is used, and the reaction gas is a gas containing a nitrogen atom, N ₂ gas (nitrogen gas), NH ₃ gas, N ₂ H ₄ gas, NO ₂ gas, NO Gas, N ₂ O gas or the like can be employed. Nitrogen gas is used here.

A vacuum exhaust device 19 is connected to the vacuum chamber 10, and when the vacuum exhaust device 19 is operated, the inside of the vacuum chamber 10 is evacuated to form a vacuum atmosphere.

After the vacuum atmosphere is formed in the vacuum tank 10, the mixed gas is introduced from the mixer 36 of the gas supply device 15 into the interior of the barrier plate container 31, and the sputter power supply 35 is started to start the sputter electrode ( When an AC sputtering voltage is applied to 32), a plasma of a mixed gas including plasma of argon gas and plasma of nitrogen gas is formed on the surface of the target 33, and the surface of the target 33 is formed by the argon gas plasma. It is sputtered.

At this time, the metal gallium on the surface of the target 33 is nitrided by nitrogen gas plasma, and the gallium nitride on the surface of the target 33 is sputtered.

The sputtering particles 38, which are gallium nitride particles protruding from the surface of the target 33, pass through the opening 34 and the discharge port 37, are discharged into the vacuum bath 10, and are transferred to the substrate holder 21. It reaches the disposed substrate 22. The alternating current sputtering voltage is a high-frequency voltage of 13.56MHz.

The radical drying unit 40 has a reaction vessel 44 and an activation device 43 installed in the reaction vessel 44.

A device container 42 is installed in the vacuum tank 10, and the reaction container 44 is disposed inside the device container 42.

A source gas supply source 45 and a reaction power supply 46 are disposed outside the vacuum bath 10. The raw material gas is disposed in the raw material gas supply source 45, and the raw material gas is supplied into the reaction vessel 44. Here, the source gas is nitrogen gas.

At this time, when a high-frequency ionization voltage is supplied from the reaction power supply 46 to the activation device 43, the source gas is activated inside the reaction vessel 44, and the ions (nitrogen ions) of the source gas and the radicals ( Nitrogen radicals 48 are produced. The activation device 43 is a coil wound around the reaction vessel 44.

In the figure, reference numeral 24 denotes a shutter, which is rotated by a rotating shaft 25, and the substrate 22 is exposed or covered by the opening and closing of the shutter 24. Here, the shutter 24 is opened and the substrate 22 is exposed.

The reaction vessel 44 has a discharge port 49. A known filter device 47 that does not allow ions to pass through is disposed at the discharge port 49, and the nitrogen radical 48, which is a radical of the raw material gas generated inside the reaction vessel 44, passes through the filter device 47. Although passing through, ions of the source gas do not pass through the filter device 47, so that the ions of the source gas do not leak out of the reaction vessel 44 from the discharge port 49.

Ions of the source gas are not emitted from the radical gun unit 40, and nitrogen radicals 48, which are radicals of the source gas, are emitted to reach the surface of the substrate 22 disposed on the substrate holder 21.

The heater 23 is energized by the heating power supply 28, and the substrate 22 is heated by the heater 23 that generates heat, and is heated to a temperature of 600°C or higher. However, if the temperature of the substrate 22 is 300°C or higher, less than 900°C is sufficient.

Among the sputtering particles 38 that have reached the surface of the substrate 22, gallium in the sputtering particles 38 lacking nitrogen reacts with the nitrogen radicals 48, and a gallium nitride crystal with an increased nitrogen ratio is formed to form the substrate 22 ), a gallium nitride thin film grows on the surface.

Reference numeral 6 in FIG. 2 is a gallium nitride thin film formed with a predetermined thickness, and the substrate 22 is an n-type gallium nitride thin film grown on a sapphire substrate 4 by HVPE method (hydride vapor phase growth method: Hydride Vapor Phase Epitaxy). (5) is disposed, and the gallium nitride thin film 6 grown by the film forming apparatus 2 of the present invention is placed in contact with the surface of the n-type gallium nitride thin film 5.

The reaction gas contains an impurity compound that determines the p-type or n-type of the gallium nitride thin film 6 to be formed. For example, when a magnesium compound gas is added, nitride that grows on the surface of the substrate 22 When magnesium is doped in the gallium thin film, a p-type gallium nitride thin film is formed.

On the surface of the substrate 22 to which the n-type gallium nitride thin film 5 formed by the HVPE method was exposed, the gallium nitride thin film 6 was formed by changing the content of the reactive gas in the mixed gas.

Table 1 below shows the conditions for forming a thin film.

The pressure of the sputtering gas made of argon (sputtering gas partial pressure) is maintained at a constant value of 0.130 Pa, and the pressure in the vacuum tank 10 of the nitrogen gas, which is the raw material gas introduced into the radical drying unit 40 (raw material gas partial pressure), is also It is maintained at a constant value of 0.030 Pa, and in that state, the pressure (reaction gas partial pressure) in the vacuum tank 10 of nitrogen gas, which is a reaction gas mixed with the sputtering gas, is changed.

In Table 1, the ``nitrogen ratio 1'' is a ratio of the partial pressure of the source gas (RG; constant value 0.03 Pa) to the sum of the partial pressure of the source gas (RG (Pa)) and the partial pressure of the reaction gas (RE (Pa)), The ``nitrogen ratio 2'' is the sum of the partial pressure of the source gas (RG(Pa) and the partial pressure of the reactive gas (RE(Pa))), the partial pressure of the source gas (RG(Pa), the partial pressure of the reaction gas (RE(Pa)), and the partial pressure of the sputtering gas) It is a ratio to the total value of (SP(Pa)).

The source gas partial pressure (RG(Pa)) and the reactive gas partial pressure (RE(Pa)) are the vacuum tank 10 when the pressure of the atmosphere in which the substrate 22 in the vacuum tank 10 is disposed is a voltage. ) It is the partial pressure value inside.

In Tables 1 to 4 below, the nitrogen ratio 1 and the nitrogen ratio 2 are represented by the following formula.

Nitrogen Ratio 1 = RG / (RG + RE)

Nitrogen ratio 2 = (RG + RE) / (RG + RE + SP)

In Table 1, as the film forming conditions, the values of the changed reaction gas partial pressure (RE(Pa)) and the nitrogen ratio 1 and nitrogen ratio 2 corresponding to the values of the reaction gas partial pressure (RE(Pa)) are described.

Under these film-forming conditions, first, the surface state of the formed thin film was observed to determine whether the thin film was a metal gallium thin film or a gallium nitride thin film 6. The judgment results are shown in Table 1 below.

Further, the obtained gallium nitride thin film 6 was analyzed by X-ray diffraction (here, the X-ray locking curve method), and the full width at half of the peak showing orientation (10-10) from the relationship between ω and the X-ray diffraction intensity (second: arcsec) Was obtained. The results are shown in Table 1 below and the graph of FIG. 3.

Further, the thickness of the obtained gallium nitride thin film 6 was measured, and the growth rate (nm/min) of the gallium nitride thin film 6 was calculated from the measurement result and the film formation time. The results are shown in Table 1 below and the graph of FIG. 4.

The relationship between gas partial pressure and nitriding Reactive gas partial pressure (Pa) 0.000 0.010 0.018 0.035 0.045 0.053 0.070 Nitrogen ratio 1(%) 100 75 63 46 40 36 30 Nitrogen ratio 2(%) 19 24 27 33 37 39 43 Observation result No radical irradiation metal metal metal metal GaN GaN GaN With radical irradiation metal metal GaN GaN GaN GaN GaN Half price full width
(arcsec) No radical irradiation - - - 835 907 918 1336 With radical irradiation - - 904 914 1004 1026 1055 Growth rate
(nm/min) No radical irradiation - - - 11.4 12.3 13.2 11.0 With radical irradiation - - 16.4 15.3 14.4 14.0 13.7

Partial pressure of sputtering gas = SP(Pa) = 0.130(Pa)

Source gas partial pressure = RG(Pa) = 0.030(Pa)

Reactive gas partial pressure = RE(Pa)

Nitrogen Ratio 1 = RG/(RG+RE)

Nitrogen ratio 2 = (RG+RE)/(RG+RE+SP)

In the case of forming a gallium nitride thin film by radical irradiation from Table 1, it can be seen that the nitrogen ratio 1 is within the range of 40% or more and 63% or less.

The column marked with ``-'' in Table 1 is the result of the film formation conditions in which gallium nitride could not be confirmed, but under the condition of the reaction gas partial pressure of 0.035 Pa, metal was observed with the naked eye, but the peak of X-ray was observed. It is thought that a gallium nitride thin film is formed in

Next, the partial pressure of the nitrogen gas introduced into the vacuum tank 10 from the radical gun 40 (the partial pressure of the raw material gas in Table 1) and the partial pressure of the nitrogen gas introduced into the vacuum tank 10 as a reaction gas for reactive sputtering Using the value and the temperature of the substrate 22 as sputtering conditions, the XRC half width of the (10-10) plane (XRC: X-ray locking curve method), the XRC half width of the (0002) plane, and the growth rate were measured. The partial pressure value of the sputtering gas is 0.13 Pa in each condition.

The measurement results are shown in Tables 2 to 4. Argon gas was used as the sputtering gas.

Sputter condition and (10-10) side XRC half width Partial pressure of sputtering gas
(SP) 0.13 0.13 0.13 0.13 0.13 0.13 Source gas partial pressure (RG) 0.03 0.03 0.03 0.03 0.03 0.03 Reactive gas partial pressure (RE) 0.00 0.01 0.03 0.05 0.07 0.09 Nitrogen ratio 1 100% 75% 50% 38% 30% 25% Nitrogen ratio 2 19% 24% 32% 38% 43% 48%
Growth temperature
(℃) 300 - Metal △ △ × × 500 - Metal ○ △ △ × 700 - ◎ ○ △ × × 900 - ◎ ○ △ × ×

Partial pressure value: Pa

Sputter condition and (0002) plane XRC half width Partial pressure of sputtering gas
(SP) 0.13 0.13 0.13 0.13 0.13 0.13 Source gas partial pressure (RG) 0.03 0.03 0.03 0.03 0.03 0.03 Reactive gas partial pressure (RE) 0.00 0.01 0.03 0.05 0.07 0.09 Nitrogen ratio 1 100% 75% 50% 38% 30% 25% Nitrogen ratio 2 19% 24% 32% 38% 43% 48%
Growth temperature
(℃) 300 - Metal △ △ × × 500 - Metal ◎ △ △ × 700 - ◎ ○ △ × × 900 - ○ △ × × ×

Partial pressure value: Pa

Sputter conditions and growth rate Partial pressure of sputtering gas
(SP) 0.13 0.13 0.13 0.13 0.13 0.13 Source gas partial pressure (RG) 0.03 0.03 0.03 0.03 0.03 0.03 Reactive gas partial pressure (RE) 0.00 0.01 0.03 0.05 0.07 0.09 Nitrogen ratio 1 100% 75% 50% 38% 30% 25% Nitrogen ratio 2 19% 24% 32% 38% 43% 48%
Growth temperature
(℃) 300 - Metal △ △ × × 500 - Metal ○ ◎ ○ △ 700 - ○ ◎ ○ △ × 900 - ○ ◎ ○ △ ×

Partial pressure value: Pa

In Tables 2 and 3, "◎" shows the measurement result with a narrow half-value width, and "○", "△", and "x" have a value of the half-value width increasing in this order. Thin films formed under the conditions indicated by ``x'' cannot be used, but thin films formed under conditions indicated by ``◎'', thin films formed under conditions indicated by ``○'', and thin films formed under conditions indicated by ``△'' are of usable quality. to be.

In Table 4, "double-circle" shows the measurement result of a large film-forming speed, and "○", "△", and "x" are the values of the film-forming speed decreasing in this order. The film formation speed under the conditions indicated by ``x'' is small, so it takes a long time to form a thin film, so it is not suitable for practical use. It is a practical condition.

In addition, "-" in Tables 2-4 is a condition in which a thin film was not formed. "Metal" is described in the condition where a gallium nitride thin film is not formed and a metallic gallium thin film is formed.

From the measurement results in Tables 2 to 4 above, the nitrogen ratio 1 in the temperature range of 300°C to 900°C is 0.375 (= 0.03 (0.03 + 0.05)) when RG = 0.03Pa and RE = 0.05: 38 in the table %) is the lowest value at which good products can be obtained.

When obtaining good products in the temperature range of 300°C to 500°C, the maximum value of nitrogen ratio 1 is 0.5.

Next, FIG. 5 is a light emitting device (LED) 50 using the gallium nitride thin film 6 formed according to the present invention. When a current is passed between the anode electrode 61 and the cathode electrode 62, the light emitting layer 53 is It glows.

The light emitting device 50 is composed of a gallium nitride thin film 52 to 55, 6, 57 to 59 formed by epitaxial growth on a sapphire substrate 51, and in detail, the light emitting device 50 is a sapphire substrate It has an n-GaN thin film 52 having a thickness of 2 μm grown in contact with the surface of 51, and a light emitting layer having a thickness of 70 nm (MQW) 53 grown on the n-GaN thin film 52, and a cathode electrode 62 is formed in contact with the n-GaN thin film 52.

On the light-emitting layer 53, a p-type base thin film 54 having a thickness of 20 nm is grown in contact with the light-emitting layer 53, and a p-type thin film 55 having a thickness of 100 nm is grown on the surface of the p-type base thin film 54. On the surface of the p-type thin film 55, a p ⁺ -type gallium nitride thin film 6 formed in the present invention and having a thickness of 4 nm containing magnesium at a high concentration is grown.

The light-emitting layer 53 is a gallium nitride thin film having a multiple quantum well (MQW) structure. The impurity of the p-type underlying thin film 54 is aluminum.

On the surface of the p ⁺ type gallium nitride thin film 6, an n ⁺ type gallium nitride thin film 57 having a thickness of 2 nm containing silicon at a high concentration is grown, and the surface of the gallium nitride thin film 57 has a film thickness. A 400 nm n-type gallium nitride thin film 58 is grown.

On the surface of the n-type gallium nitride thin film 58, a contact thin film 59 having a thickness of 20 nm containing a high concentration of n-type impurities is grown, and the anode electrode 61 is formed in contact with the contact thin film 59. have .

The anode electrode 61 and the cathode electrode 62 are metal thin films in which a titanium thin film, an aluminum thin film, a titanium thin film, and a gold thin film are stacked in this order, and since the contact resistance is small, the anode electrode 61 and the cathode electrode 62 When a current is passed between the light emitting layer 53 with high efficiency.

In the above example, a p ⁺ type gallium nitride thin film 6 having a thickness of 4 nm and located on the p-type thin film 55 having a thickness of 100 nm was formed by the present invention, but each nitride disposed on the light emitting layer 53 A gallium thin film can be formed by the present invention, and in particular, an n ⁺ type gallium nitride thin film 57 having a film thickness of 2 nm, an n-type gallium nitride thin film 58 having a film thickness of 400 nm, and a film containing a high concentration of n-type impurities. The application of the present invention to a contact thin film 59 having a thickness of 20 nm can be considered.

In the above example, a compound gas, which is an impurity, is contained in the reactive gas to form an n-type or p-type gallium nitride thin film, but an n-type or p-type gallium nitride thin film can be formed by using a target containing impurities.

Reference numeral 2'in Fig. 6 denotes a film forming apparatus that can be used in the manufacturing method in that case, and the film forming apparatus 2'has a reactive sputtering portion 30a and an auxiliary sputtering portion 30b.

The reactive sputtering unit 30a of the film forming apparatus 2 ′ of FIG. 6 has the same structure as the reactive sputtering unit 30 of the film forming apparatus 2 of FIG. In the same member as the active sputtering unit 30, a subscript a is added to the reference numeral of the member of the reactive sputtering unit 30 of the film forming apparatus 2 of FIG. 1, and description thereof is omitted. In addition, among the other members of the film forming apparatus 2', members identical to those of the film forming apparatus 2 in Fig. 1 are denoted by the same reference numerals, and the description is omitted.

The auxiliary sputter part 30b has an auxiliary anti-detachable plate container 31b, and an auxiliary sputter electrode 32b is disposed inside the auxiliary anti-destructive plate container 31b. An impurity target 33b made of impurities that determines the p-type or n-type of the semiconductor is disposed on the auxiliary sputter electrode 32b.

The auxiliary barrier plate container 31b has an auxiliary discharge port 37b, and the impurity target 33b is disposed to face the substrate 22 disposed on the substrate holder 21 through the auxiliary discharge port 37b. Has been.

An auxiliary sputter power supply 35b is disposed outside the vacuum bath 10.

The auxiliary sputter electrode 32b is connected to the auxiliary sputter power supply 35b, and the vacuum bath 10 is connected to the ground potential.When the auxiliary sputter power supply 35b operates, a sputter voltage is applied to the auxiliary sputter electrode 32b. do.

An auxiliary gas supply device 15b is disposed outside the vacuum tank 10. The auxiliary gas supply device 15b is provided with an auxiliary sputter gas source 26b for supplying auxiliary sputtering gas, which is a rare gas such as argon.

The target 33a of the reactive sputtering portion 30a of the film forming apparatus 2'is reactively sputtered by the same operation as the film forming apparatus 2 in FIG. 1, and nitrogen radicals 48 are generated from the radical drying unit 40. When the gallium nitride thin film is released and the gallium nitride thin film grows on the surface of the substrate 22, the impurity target 33b of the auxiliary sputtering unit 30b is sputtered with an auxiliary sputtering gas, and the generated auxiliary sputtering particles 38b are transferred to the substrate 22 ) When reaching the surface, impurities of the auxiliary sputtering particles 38b are contained in the gallium nitride thin film formed on the surface of the substrate 22 to form a p-type or n-type gallium nitride thin film.

6 Gallium nitride thin film
22 substrate
31 barrier plate container
33 target
38 sputtering particles
40 radical drying
48 nitrogen radical
49 outlet
50 light-emitting elements
53 Emitting layer

Claims (5)

While irradiating nitrogen radicals to the substrate arranged in the vacuum tank from the discharge port of the radical drying unit, the target of metal gallium is sputtered by plasma of a mixed gas containing nitrogen gas and sputtering gas, and the generated sputtering particles reach the substrate to reach gallium nitride. To form a thin film,
The value of the partial pressure of the source gas, which is the partial pressure of the nitrogen gas introduced into the radical drying unit, inside the vacuum tank is a value of the partial pressure of the reaction gas, which is the partial pressure of the nitrogen gas contained in the mixed gas, and the value of the partial pressure of the source gas. A method for producing a gallium nitride thin film, characterized in that the range is 38% or more and 63% or less with respect to the total value. The method of claim 1,
The target is disposed in a barrier plate container to face the substrate,
A method of manufacturing a gallium nitride thin film, characterized in that introducing the sputtering gas and the nitrogen gas into the barrier plate container. The method of claim 1,
A method of manufacturing a gallium nitride thin film, characterized in that a filter for removing ions of nitrogen gas is disposed at the discharge port. delete The method according to any one of claims 1 to 3,
When the substrate is heated to 300° C. or more and 500° C. or less, the value of the partial pressure of the source gas, which is the partial pressure of the nitrogen gas introduced into the radical gun, inside the vacuum chamber is the partial pressure of the nitrogen gas contained in the mixed gas A method for producing a gallium nitride thin film, characterized in that the range of 38% or more and 50% or less with respect to the sum of the value of the partial pressure of the reaction gas and the partial pressure of the source gas.

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