KR102205502B1 - Leak detection apparatus - Google Patents

Leak detection apparatus Download PDF

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KR102205502B1
KR102205502B1 KR1020200024097A KR20200024097A KR102205502B1 KR 102205502 B1 KR102205502 B1 KR 102205502B1 KR 1020200024097 A KR1020200024097 A KR 1020200024097A KR 20200024097 A KR20200024097 A KR 20200024097A KR 102205502 B1 KR102205502 B1 KR 102205502B1
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conductive line
film layer
base film
solution
leakage
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KR20200027929A (en
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유홍근
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(주)유민에쓰티
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
    • G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
    • G01M3/16—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/06—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid

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Abstract

본 발명은 누설용액 감지장치에 관한 것으로, 베이스필름층의 상부면에 스퍼터링(sputtering) 방식에 의해 도전라인을 형성함으로써 균일한 저항값을 가지도록 하며, 이러한 스퍼터링 방식에 의해 도전라인이 1㎛이하의 두께를 가지도록 함으로써 상부보호필름층이 쉽게 박리되지 않도록 하는데 목적이 있다.
또한, 서로 다른 금속에 의해 스퍼터링 공정을 진행함으로써 도전라인의 상부면에 또 다른 도전라인을 적층하여 형성하여 다양한 용액의 누설을 감지할 수 있도록 한다.The present invention relates to a leak solution detection device, by forming a conductive line on the upper surface of the base film layer by a sputtering method to have a uniform resistance value, by this sputtering method, the conductive line is less than 1㎛ The purpose is to prevent the upper protective film layer from being peeled off easily by having a thickness of.
In addition, by performing a sputtering process using different metals, another conductive line is formed by stacking another conductive line on the upper surface of the conductive line, so that leakage of various solutions can be detected.

Description

누설용액 감지장치{Leak detection apparatus}Leak detection apparatus

본 발명은 누설용액 감지장치에 관한 것으로, 특히 필름재질로 된 베이스필름상에 형성되어 누설을 감지하는 도전라인을 스퍼터링(sputtering) 방식에 의해 형성하는 누설용액 감지장치에 관한 것이다.The present invention relates to a leakage solution detection device, and more particularly, to a leakage solution detection device formed on a base film made of a film material to form a conductive line for detecting leakage by a sputtering method.

본 출원인은 이미 여러 건의 등록 특허(10-0909242, 10-0827385 등)에서 테이프 형태로 되어 누수가 발생하기 쉬운 위치에 설치함으로써 누수 발생을 쉽게 감지할 수 있도록 하는 테이프 형태의 누수감지센서를 제안한 바 있다.The applicant of the present invention has already proposed a tape-type leak detection sensor that can easily detect the occurrence of leaks by installing it in a location where leakage is prone to being in a tape form in several registered patents (10-0909242, 10-0827385, etc.). have.

도1 및 도2에 도시한 바와 같이 이러한 누수감지센서(100)는 하부접착층(120), 베이스필름층(110), 상부보호필름층(130)이 저면에서 상방으로 순차적으로 적층되어 이루어진다.As shown in FIGS. 1 and 2, the leak detection sensor 100 is formed by sequentially stacking a lower adhesive layer 120, a base film layer 110, and an upper protective film layer 130 from the bottom to the top.

하부접착층(120)은 누수가 발생되는 곳에 부착하기 위한 것으로, 접착 테이프 형태로 구성되고, 베이스필름층(110)은 도전라인(111,112)이 상부에 형성되기 위한 층으로서, 도전라인(111,112)의 패턴을 인쇄 방식에 형성하기 위해 PET, PE, PTFE, PVC 또는 기타 테프론 계열의 재질의 필름으로 형성된다.The lower adhesive layer 120 is for attaching to the place where water leakage occurs, and is configured in the form of an adhesive tape, and the base film layer 110 is a layer for forming the conductive lines 111 and 112 on the upper part of the conductive lines 111 and 112. In order to form a pattern in a printing method, it is formed of a film made of PET, PE, PTFE, PVC or other Teflon-based materials.

그리고, 도전라인(111,112)은 베이스필름층(110)의 상부표면에서 서로 이격되어 길이방향으로 평행하게 스트립 형태로 배치되며, 도전성 잉크 또는 은(Silver) 화합물로 인쇄된다.Further, the conductive lines 111 and 112 are spaced apart from each other on the upper surface of the base film layer 110 and arranged in a strip shape in parallel in the longitudinal direction, and are printed with conductive ink or a silver compound.

상부보호필름층(130)은 베이스필름층(110)의 상부에 적층되어 도전라인(111,112)을 외부의 자극으로부터 보호하기 위한 층으로서, 베이스필름층(110)과 같이 PET, PE, PTFE, PVC 또는 기타 테프론 계열의 재질로 형성되며, 도전라인(111,112)에 해당하는 위치에 일정간격마다 센싱홀(131)이 관통되어 형성되도록 구성된다.The upper protective film layer 130 is laminated on the base film layer 110 to protect the conductive lines 111 and 112 from external stimuli. Like the base film layer 110, PET, PE, PTFE, PVC Alternatively, it is formed of other Teflon-based material, and is configured to pass through the sensing holes 131 at predetermined intervals at positions corresponding to the conductive lines 111 and 112.

따라서, 누수가 발생하면, 누수가 발생된 위치의 센싱홀(131)을 통해 수분이 유입되어 두 도전라인(111,112)이 수분에 의해 통전되며, 원격의 제어기가 그 통전상태 즉 폐회로가 형성되는 상태를 파악하여 누수여부를 감지하고, 그에 따른 경보를 발생할 수 있게 된다.Therefore, when water leakage occurs, water flows through the sensing hole 131 at the location where the water leakage occurs, so that the two conductive lines 111 and 112 are energized by the water, and the remote controller is in the energized state, that is, a closed circuit is formed. It can detect whether there is a leak, and generate an alarm accordingly.

또한, 두 도전라인(111,112)의 저항값의 크기에 의해 누수된 위치 즉 거리를 확인할 수 있게 되는데, 저항값이 큰 경우에는 제어기로부터 멀리 떨어진 위치에서 누수가 발생된 것이고, 저항값이 상대적으로 낮은 경우에는 제어기로부터 가까운 위치에서 누수가 발생된 것으로 확인할 수 있다.In addition, it is possible to check the leaked location, that is, the distance, by the magnitude of the resistance values of the two conductive lines 111 and 112. If the resistance value is large, the leak has occurred at a location far from the controller, and the resistance value is relatively low. In this case, it can be confirmed that water leakage has occurred in a location close to the controller.

그런데, 이러한 종래의 필름형 누수감지센서(100)는 도전라인(111,112)이 주로 그라비아(Gravure) 인쇄방식을 이용하여 형성됨으로써 도전성 잉크 또는 은 화합물의 혼합비에 따라 저항값이 서로 다르게 나타나므로, 정확한 누설 위치 즉, 거리의 측정이 어렵게 되는 문제점이 있었다.However, in such a conventional film-type leak detection sensor 100, since the conductive lines 111 and 112 are mainly formed using a gravure printing method, the resistance values are different depending on the mixing ratio of the conductive ink or the silver compound. There is a problem that it becomes difficult to measure the leakage location, that is, the distance.

또한, 도전성 잉크, 은 화합물 등에 의해 인쇄방식 또는 금속시트, 박판 등의 도전성 재질에 의해 도전라인(111,112)을 형성하는 경우에 5~10㎛의 두께를 가지므로 높은 저항값을 가지게 되어 누수감지센서(100)가 수백미터로 길게 설치된 경우에는 그 높은 저항값에 의해 누수 여부 및 누수된 위치를 정확히 확인하기 어려운 문제점이 있다.In addition, when the conductive lines 111 and 112 are formed by a printing method such as a conductive ink or a silver compound or a conductive material such as a metal sheet or a thin plate, they have a thickness of 5 to 10 μm, so they have a high resistance value. In the case where 100 is installed as long as several hundred meters, there is a problem in that it is difficult to accurately check whether or not the leakage has been leaked due to the high resistance value.

아울러 도전라인(111,112)의 두께에 의해 상부에 적층되는 상부보호필름층(130)이 베이스필름층(110)에 안정적으로 부착되지 못하고 쉽게 박리됨으로써 누수감지센서(100)의 불량 소지를 가지고 있게 된다.In addition, due to the thickness of the conductive lines 111 and 112, the upper protective film layer 130 stacked on the top cannot be stably attached to the base film layer 110 and is easily peeled off, thereby having a defect in the leak detection sensor 100. .

이러한 문제점을 해결하기 위한 본 발명은, 베이스필름층의 상부면에 스퍼터링(sputtering) 방식에 의해 도전라인을 형성함으로써 균일한 저항값을 가지도록 하며, 이러한 스퍼터링 방식에 의해 도전라인이 1㎛이하의 두께를 가지도록 함으로써 상부보호필름층이 쉽게 박리되지 않도록 한 누설용액 감지장치를 제공하는데 목적이 있다.The present invention for solving this problem is to have a uniform resistance value by forming a conductive line on the upper surface of the base film layer by a sputtering method, and the conductive line is less than 1㎛ by this sputtering method. An object of the present invention is to provide a leakage solution detection device in which the upper protective film layer is not easily peeled off by having a thickness.

본 발명의 또 다른 목적은 도전성을 갖는 서로 다른 금속에 의해 스퍼터링 공정을 진행함으로써 도전라인의 상부면에 또 다른 도전라인을 적층하여 형성하여 다양한 용액의 누설을 감지할 수 있도록 한다.Another object of the present invention is to form a sputtering process using different metals having conductivity, thereby forming another conductive line by stacking another conductive line on the upper surface of the conductive line to detect leakage of various solutions.

이를 위해 본 발명의 누설용액 감지장치는To this end, the leakage solution detection device of the present invention

필름재질로 된 베이스필름층과, 상기 베이스필름층의 상부면에 길이방향으로 형성된 도전라인으로 구성된 누설용액 감지장치에 있어서,In the leakage solution detection device comprising a base film layer made of a film material and a conductive line formed in a longitudinal direction on an upper surface of the base film layer,

상기 도전라인은 도전성을 갖는 금속에 의해 스퍼티링(sputtering) 방식으로 형성된다.The conductive line is formed by a metal having conductivity in a sputtering method.

또한, 상기 도전라인의 상부면에는 도전성을 갖는 또 다른 금속에 의해 스퍼터링 방식으로 도전라인이 적층되어 형성된다.Further, a conductive line is formed by laminating a conductive line on the upper surface of the conductive line in a sputtering method by using another metal having conductivity.

이와같은 본 발명은 베이스필름층의 상부면에 스퍼터링 방식에 의해 도전라인을 형성함으로써 균일한 저항값을 가지도록 하여 누설용액과 누설위치를 정확히 감지할 수 있어 신뢰성을 높이며, 스퍼터링 방식에 의해 도전라인이 1㎛이하의 두께를 가지도록 함으로써 상부보호필름층이 쉽게 박리되지 않도록 하여 제품의 불량률을 현저히 낮출 수 있다.In the present invention, a conductive line is formed on the upper surface of the base film layer by a sputtering method, so that it has a uniform resistance value, so that the leakage solution and the leakage location can be accurately detected, thereby increasing the reliability, and the conductive line by the sputtering method. By having a thickness of 1 μm or less, the upper protective film layer is not easily peeled off, so that the defect rate of the product can be significantly reduced.

또한, 도전성을 갖는 복수의 금속에 의해 2층 이상의 도전라인을 형성함으로써 누설되는 용액의 종류까지 판별이 가능한 장점이 있다.In addition, by forming two or more layers of conductive lines with a plurality of conductive metals, there is an advantage in that it is possible to discriminate even the type of leaking solution.

도1은 공지의 누수감지장치의 분해 구조를 보인 도.
도2는 도1의 결합 단면도.
도3은 본 발명의 제1실시예에 따른 누설용액 감지장치의 구조를 보인 도.
도4는 본 발명의 제2실시예에 따른 누설용액 감지장치의 구조를 보인 도.
도5는 제2실시예의 단면구조를 보인 도.
도6은 본 발명의 제3실시예에 따른 누설용액 감지장치의 구조를 보인 단면도.
도7은 본 발명의 제4실시예에 따른 누설용액 감지장치의 구조를 보인 도.
도8은 본 발명의 제5실시예에 따른 누설용액 감지장치의 구조를 보인 도.
도9은 본 발명에 의해 용액의 누설을 감지하기 위한 회로 구성도.
도10은 도전라인이 형성될 부위를 제외한 위치에 보호막이 부착되는 구조를 보인 도.1 is a diagram showing an exploded structure of a known leak detection device.
Figure 2 is a cross-sectional view of the combination of Figure 1;
3 is a view showing the structure of a leak solution detection device according to the first embodiment of the present invention.
4 is a view showing the structure of a leak solution detection device according to a second embodiment of the present invention.
Fig. 5 is a diagram showing a cross-sectional structure of a second embodiment.
6 is a cross-sectional view showing the structure of a leak solution detection device according to a third embodiment of the present invention.
7 is a view showing the structure of a leak solution detection device according to a fourth embodiment of the present invention.
8 is a view showing the structure of a leak solution detection device according to a fifth embodiment of the present invention.
9 is a circuit diagram for detecting a leakage of a solution according to the present invention.
10 is a view showing a structure in which a protective film is attached to a location excluding a portion where a conductive line is to be formed.

본 발명을 첨부한 도면을 참조하여 상세히 설명한다.The present invention will be described in detail with reference to the accompanying drawings.

도3은 본 발명의 제1실시예에서 적용된 누설용액 감지장치의 구조를 보인 도로서, 도3(a)에서와 같이 PET, PE, PTFE, PI, PVC 또는 기타 테프론 계열의 필름 재질로 된 베이스필름층(210)의 상부면에는 절연을 위하여 절연물질로 된 코팅층(220)이 도포되고, 상기 코팅층(220)의 상부면으로는 한 쌍의 도전라인(231,232)이 스퍼터링 공정에 의해 서로 이격되어 길이방향으로 평행하게 스트립 형태로 증착되어 배치된다.Figure 3 is a diagram showing the structure of the leakage solution sensing device applied in the first embodiment of the present invention, as shown in Figure 3 (a), a base made of PET, PE, PTFE, PI, PVC or other Teflon-based film material A coating layer 220 made of an insulating material is applied to the upper surface of the film layer 210 for insulation, and a pair of conductive lines 231 and 232 are spaced apart from each other by a sputtering process on the upper surface of the coating layer 220. It is deposited and arranged in a strip shape parallel to the length direction.

상기 도전라인(231,232)의 상부면으로는 상부보호필름층(260)이 적층되는데, 상부보호필름층(260)은 PET, PE, PTFE, PI, PVC 또는 기타 테프론 계열의 필름 재질로 형성되고, 도전라인(231,232)에 해당하는 위치에서 길이방향으로 일정간격마다 센싱홀(261)이 형성된 구조를 갖는다.An upper protective film layer 260 is stacked on the upper surfaces of the conductive lines 231 and 232, and the upper protective film layer 260 is formed of PET, PE, PTFE, PI, PVC or other Teflon-based film material, It has a structure in which sensing holes 261 are formed at regular intervals in the longitudinal direction at positions corresponding to the conductive lines 231 and 232.

도전라인(231,232)을 형성하기 위한 스퍼터링 공정은 진공 챔버에서 도전성을 가지는 금속과 코팅층(220)이 형성된 베이스필름층(210)을 위치시키게 되는데, 코팅층(220)의 상부면에는 도전라인(231,232)이 형성될 위치를 제외한 부위에 도10에서와 같이 보호막(221)을 씌우게 된다.In the sputtering process for forming the conductive lines 231 and 232, the base film layer 210 on which the conductive metal and the coating layer 220 is formed is placed in a vacuum chamber. The conductive lines 231 and 232 are on the upper surface of the coating layer 220. As shown in FIG. 10, the protective film 221 is covered on the area excluding the location to be formed.

이러한 보호막(221)은 합성수지재로 된 테이프가 될 수 있다.The protective film 221 may be a tape made of a synthetic resin material.

물론, 코팅층(220)은 완벽한 절연을 위하여 더 부가되는 것이고, 베이스필름층(210)이 충분히 절연성능을 가지고 있다면, 이러한 절연을 위한 코팅층(220)은 삭제될 수 있으며, 이때는 베이스필름층(210)에 곧바로 보호막(221)이 씌워질 수 있을 것이다.Of course, the coating layer 220 is further added for perfect insulation, and if the base film layer 210 has sufficient insulation performance, the coating layer 220 for insulation may be removed, and in this case, the base film layer 210 ) May be immediately covered with the protective film 221.

이후, 도전성을 가지는 금속에는 (-)전압을 걸고, 베이스필름층(210)에는 (+)전압을 건 다음 진공 챔버내에 아르곤 가스를 투입하게 되면, 이온화된 아르곤 가스가 도전성을 가지는 금속과 충돌하여 튀어나온 금속 입자는 베이스필름층(210)에 증착된다.Thereafter, when (-) voltage is applied to the conductive metal and (+) voltage is applied to the base film layer 210, and then argon gas is introduced into the vacuum chamber, the ionized argon gas collides with the conductive metal. The protruding metal particles are deposited on the base film layer 210.

증착 공정이 완료된 후 보호막(221)을 제거하면, 도전라인(231,232) 부분만 남고, 나머지 부분은 보호막(221)에 의해 제거되어 도전라인(231,232)이 형성되는 것이다.When the protective layer 221 is removed after the deposition process is completed, only portions of the conductive lines 231 and 232 remain, and the remaining portions are removed by the protective layer 221 to form the conductive lines 231 and 232.

이러한 스퍼터링 방식을 이용하는 경우에는 도전라인(231,232)의 두께가 0.1~1㎛를 가질 수 있으므로, 두께도 얇아지게 되고, 균일한 저항값을 가질 수 있을 것이다.In the case of using such a sputtering method, since the thickness of the conductive lines 231 and 232 may have a thickness of 0.1 to 1 μm, the thickness is also reduced and a uniform resistance value may be obtained.

도3(c)는 도전라인(231,232)의 상부면에 또 다른 도전라인(241,242)을 스퍼터링 방식에 의해 형성하는 것으로, 도전라인(231,232)을 형성할 때와 다른 도전성을 가지는 금속을 이용하여 스퍼터링 공정을 재차 수행함으로써 2층의 도전라인이 형성된다.3(c) shows another conductive line 241, 242 formed on the upper surfaces of the conductive lines 231 and 232 by a sputtering method, and sputtering using a metal having a different conductivity than when forming the conductive lines 231 and 232 By performing the process again, two layers of conductive lines are formed.

이러한 경우는 상부의 도전라인(241,242)이 산성에 약한 금속 입자로 형성된 도전라인이고, 하부의 도전라인(231,232)이 산성에 강한 금속입자로 형성되었다면, 산성용액이 누설된 경우 상부의 도전라인(241,242)은 서로 통전되면서 곧바로 부식이 발생하고, 이러한 부식에 의해 하부의 도전라인(231,232)이 서로 통전될 것이다.In this case, if the upper conductive lines 241 and 242 are formed of metal particles that are weak to acid, and the lower conductive lines 231 and 232 are formed of metal particles that are resistant to acid, if the acid solution leaks, the upper conductive line ( Corrosion occurs immediately as the 241 and 242 are energized to each other, and the conductive lines 231 and 232 at the lower part will be energized to each other by such corrosion.

제어기는 이러한 상부의 도전라인(241,242)의 통전 후에 하부의 도전라인(231,232)이 통전되는 경우 산성용액의 누설로 판단할 수 있을 것이다.The controller may determine that the acid solution leaks when the lower conductive lines 231 and 232 are energized after the upper conductive lines 241 and 242 are energized.

도3(c)는 도전라인(241,242)의 상부에 또 다른 도전성을 갖는 금속에 의해 스퍼터링 공정으로 3층의 도전라인(251,252)이 형성된 구조를 보인 것이다.3(c) shows a structure in which three layers of conductive lines 251 and 252 are formed on top of the conductive lines 241 and 242 by a sputtering process using a metal having another conductivity.

도4는 2선의 도전라인 방식이 아닌 4선의 도전라인 방식의 구조를 보인 도로서, 도4(a)는 도3의 도전라인(241,242)의 양측부에 또 다른 도전라인(233,234)이 나란히 형성된 경우를 보인 도로서, 도전라인(231)은 저항라인으로 설정되고, 다른 도전라인(232,233,234)은 단순히 전도성 라인으로 설정됨으로써 도9에서와 같이 회로 구조를 가질 수 있다.Fig. 4 is a diagram showing a structure of a four-wire conductive line type instead of a two-wire conductive line method, and Fig. 4(a) is another conductive line 233 and 234 formed side by side on both sides of the conductive lines 241 and 242 of Fig. As a diagram illustrating a case, the conductive line 231 is set as a resistance line, and the other conductive lines 232, 233, and 234 are simply set as conductive lines, thereby having a circuit structure as shown in FIG. 9.

도전라인(231)과 도전라인(233)은 그 타측 단부가 서로 연결되어 일측 단부로부터 센싱을 위한 전원을 공급받고, 도전라인(232)과 도전라인(234)의 타측 단부가 서로 연결되면서 일측 단부가 제어기(400)에 연결되는 구조를 가지게 되면, 상부보호필름층(260)의 센싱홀(261)을 통해 누설된 용액이 유입되어 저항라인(231)과 도전라인(232) 사이가 통전됨으로써 제어기(400)는 도전라인(231)과 도전라인(232) 사이의 저항값을 받아들여 누설여부는 물론 누설위치까지 확인할 수 있는 것이다. The other end of the conductive line 231 and the conductive line 233 are connected to each other to receive power for sensing from one end, and one end of the conductive line 232 and the other end of the conductive line 234 are connected to each other. When the controller 400 has a structure connected to the controller 400, the leaked solution flows through the sensing hole 261 of the upper protective film layer 260, and the resistance line 231 and the conductive line 232 are energized, so that the controller 400 accepts the resistance value between the conductive line 231 and the conductive line 232 so as to check whether there is leakage as well as the location of the leakage.

도4(b)의 경우에도 도전라인(233,234)의 상부면에 스퍼터링 공정으로 또 다른 금속입자가 증착되어 적층된 상태를 보인 것이며, 도4(c)의 경우에는 도전라인(233,234)의 상부에 또 다른 금속입자가 증착되어 적층된 도전라인(253,254)의 구조를 보인 것이다.In the case of Fig. 4(b), another metal particle is deposited by a sputtering process on the upper surfaces of the conductive lines 233 and 234 to be stacked. Fig. 4(c) shows the top surface of the conductive lines 233 and 234. It shows the structure of the conductive lines 253 and 254 stacked by depositing another metal particle.

도5는 도4의 단면구조를 보인 도로서, 베이스필름층(210)의 상부에 절연을 위한 코팅층(220)이 형성되고, 그 코팅층(220)의 상부면에 스퍼티링 방식에 의해 복수의 층을 갖는 4선의 도전라인(231,232,233,234)이 형성된다.5 is a diagram showing the cross-sectional structure of FIG. 4, in which a coating layer 220 for insulation is formed on the base film layer 210, and a plurality of coating layers 220 are formed on the upper surface of the coating layer 220 by a sputtering method. Layered 4-wire conductive lines 231, 232, 233 and 234 are formed.

상부보호필름층(260)의 접착제에 의해 코팅층(220)에 부착되어 센싱홀(261)의 가운데 두 개의 도전라인(231,232)을 외부로 노출시키는 구조이다.It is attached to the coating layer 220 by the adhesive of the upper protective film layer 260 to expose the two conductive lines 231 and 232 in the middle of the sensing hole 261 to the outside.

베이스필름층(210)의 하부면에는 벽이나 바닥에 부착하기 위한 부착층(280)이 구비될 수 있다.An adhesion layer 280 for attaching to a wall or a floor may be provided on a lower surface of the base film layer 210.

도6은 베이스필름층(210)의 하부면에 또 다시 코팅층(290)을 형성하고, 그 코팅층(290)의 하부면에 스퍼터링 방식에 의해 복수의 층을 갖는 4선의 도전라인(321,322,323,324)이 형성되며, 그 상부에 접착제(300)에 의해 하부보호필름층(310)이 적층됨으로써 도전라인(321,322)이 센싱홀(311)을 통해 외부로 노출되는 것이다.6 shows a coating layer 290 is formed on the lower surface of the base film layer 210 again, and four conductive lines 321,322,323,324 having a plurality of layers are formed on the lower surface of the coating layer 290 by sputtering. Then, the lower protective film layer 310 is laminated on the upper portion thereof by the adhesive 300 so that the conductive lines 321 and 322 are exposed to the outside through the sensing hole 311.

이러한 경우에는 바닥에 흐르는 누설용액이 하부보호필름층(310)을 통하여 도전라인(321,322)으로 유입됨으로써 누설을 감지할 수 있는 것이다.In this case, the leakage solution flowing on the floor flows into the conductive lines 321 and 322 through the lower protective film layer 310, so that leakage can be detected.

도7은 센싱홀(311)의 위치가 도전라인(323,324)의 위치에 형성된 상태를 보여준다.7 shows a state in which the position of the sensing hole 311 is formed at the position of the conductive lines 323 and 324.

도8은 하부보호필름층(310)에 센싱홀이 형성되지 않게 되어 베이스필름층(210)의 하부면에 형성된 도전라인(321,322,323,324)이 외부와는 완전 절연된 상태를 유지함으로써 순수한 신호 라인으로서 동작할 수 있게 된다.8 shows that the sensing hole is not formed in the lower protective film layer 310 so that the conductive lines 321, 322, 323, and 324 formed on the lower surface of the base film layer 210 remain completely insulated from the outside, thereby operating as a pure signal line. You can do it.

210 : 베이스필름층 220 : 코팅층
231,232,233,234,241,242,243,244,251,252,253,254 : 도전라인
260 : 상부보호필름층 261 : 센싱홀
270 : 접착제 290 : 코팅층
300 : 접착제 310 : 하부보호필름층
311 : 센싱홀 321,322,323,324 : 도전라인
400 : 제어기 210: base film layer 220: coating layer
231,232,233,234,241,242,243,244,251,252,253,254: Challenge line
260: upper protective film layer 261: sensing hole
270: adhesive 290: coating layer
300: adhesive 310: lower protective film layer
311: sensing hall 321,322,323,324: conductive line
400: controller

Claims (11)

필름재질의 베이스필름층;
상기 베이스필름층의 상부면에 길이방향으로 형성된 도전라인; 및
상기 도전라인이 형성된 베이스필름층의 상부면에 일정간격마다 센싱홀이 관통되어 형성된 상부보호필름층;
을 포함하고,
상기 도전라인은 서로 다른 도전성을 갖는 금속이 2층 이상 적층되어 형성되고,
상기 서로 다른 도전성 갖는 금속의 적층은, 누설되는 용액에 상대적으로 부식에 약한 금속이 상부에 배치되고, 상대적으로 부식에 강한 금속이 하부에 배치되어,
용액이 누설되는 경우, 상부의 상대적으로 부식에 약한 금속이 통전되면서 부식되고, 하부의 상대적으로 부식에 강한 금속이 통전되어 용액의 누설을 감지하는 누설용액 감지장치.A base film layer of a film material;
A conductive line formed in a longitudinal direction on an upper surface of the base film layer; And
An upper protective film layer formed by penetrating sensing holes at predetermined intervals on an upper surface of the base film layer on which the conductive lines are formed;
Including,
The conductive line is formed by stacking two or more layers of metals having different conductivity,
In the stacking of metals having different conductivity, a metal relatively weak to corrosion in a leaked solution is disposed on the upper side, and a metal relatively resistant to corrosion is disposed on the lower side,
When a solution leaks, a metal that is relatively weak to corrosion in the upper part is corroded while being energized, and a metal that is relatively resistant to corrosion in the lower part is energized to detect the leakage of the solution. 제1항에 있어서,
상기 도전라인은 서로 다른 도전성을 갖는 금속이 3층으로 적층되어 형성된 누설용액 감지장치.The method of claim 1,
The conductive line is a leak solution sensing device formed by stacking three layers of metals having different conductivity. 제1항에 있어서,
상기 서로 다른 도전성을 갖는 금속의 층은 스퍼터링 방식으로 형성되는 누설용액 감지장치.The method of claim 1,
The leakage solution detection device wherein the layers of metals having different conductivity are formed by a sputtering method. 제3항에 있어서,
상기 도전라인이 형성될 부위를 제외한 부위에는 보호막을 이용하여 스퍼터링하는 누설용액 감지장치.The method of claim 3,
A leak solution sensing device for sputtering using a protective film at a portion other than the portion where the conductive line is to be formed. 제1항에 있어서,
상기 베이스필름층의 하부면에 하부 도전라인이 형성되는 것을 특징으로 하는 누설용액 감지장치.The method of claim 1,
A leak solution detection device, characterized in that a lower conductive line is formed on a lower surface of the base film layer. 제5항에 있어서,
상기 하부 도전라인은 서로 다른 도전성을 갖는 금속이 2층 이상 적층되어 형성된 누설용액 감지장치.The method of claim 5,
The lower conductive line is a leak solution sensing device formed by stacking two or more layers of metals having different conductivity. 제6항에 있어서,
상기 도전라인은 서로 다른 도전성을 갖는 금속이 3층으로 적층되어 형성된 누설용액 감지장치.The method of claim 6,
The conductive line is a leak solution sensing device formed by stacking three layers of metals having different conductivity. 제5항에 있어서,
상기 도전라인이 형성된 베이스필름층의 하부면에는 상기 하부 도전라인을 보호하기 위한 하부보호필름층이 적층된 것을 특징으로 하는 누설용액 감지장치.The method of claim 5,
A leak solution detection device, characterized in that a lower protective film layer for protecting the lower conductive line is stacked on a lower surface of the base film layer on which the conductive line is formed. 제1항 내지 제8항 중 어느 한 항에 있어서,
상기 베이스필름층의 상부면에는 절연물질로 된 코팅층이 도포되고,
상기 도전라인은 상기 코팅층 위에 형성되는 누설용액 감지장치.The method according to any one of claims 1 to 8,
A coating layer made of an insulating material is applied to the upper surface of the base film layer,
The conductive line is a leak solution sensing device formed on the coating layer. 제5항에 있어서,
상기 베이스필름층의 하부면에는 절연물질로 된 코팅층이 도포되고,
상기 하부 도전라인은 상기 코팅층에 형성되는 누설용액 감지장치.The method of claim 5,
A coating layer made of an insulating material is applied to the lower surface of the base film layer,
The lower conductive line is a leakage solution sensing device formed on the coating layer. 제1항 또는 제8항에 있어서,
상기 서로 다른 도전성을 갖는 금속의 층 중 적어도 하나는 0.1~1㎛의 두께로 형성되는 누설용액 감지장치.The method according to claim 1 or 8,
At least one of the metal layers having different conductivity is formed to a thickness of 0.1 ~ 1㎛ leakage solution detection device.
KR1020200024097A 2020-02-27 2020-02-27 Leak detection apparatus KR102205502B1 (en)

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