KR102200386B1 - Organic Light Emitting Diode Display Device And Method Of Fabricating The Same - Google Patents

Abstract

The present invention includes first and second substrates facing each other and spaced apart from each other and including red, green, and blue subpixels; A first power pattern disposed on the entire inner surface of the first substrate; A driving thin film transistor disposed on each of the red, green, and blue subpixels above the first power pattern and connected to the first power pattern; A second power pattern disposed to correspond to the entire side of the first substrate; Providing an organic light-emitting diode display comprising a light emitting diode connected to the driving thin film transistor and the red, green, and blue subpixels on the driving thin film transistor and the second power pattern, respectively, and connected to the driving thin film transistor and the second power pattern do.

Description

Organic Light Emitting Diode Display Device And Method Of Fabricating The Same}

The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device including a power supply pattern disposed on a front surface of a substrate, and a method of manufacturing the same.

One of the flat panel displays (FPD), an organic light emitting diode (OLED) display, is a self-luminous type, so the viewing angle and contrast ratio are better than that of a liquid crystal display (LCD). It is excellent and does not require a backlight, so it can be lightweight and thin, and it is advantageous in terms of power consumption.

In addition, DC low voltage driving is possible, response speed is fast, and all solid materials are strong against external shocks, a wide operating temperature range, and in particular, in terms of manufacturing cost, has an advantage.

The organic light emitting diode display device is driven by a current method. As the size (area) of the organic light emitting diode display device increases, the current consumed increases and the resistance of the wiring increases.

For example, in the case of a 55-inch UHD (ultra high definition), in order to achieve a luminance of about 100 nit, an organic light emitting diode display device composed of red, green, and blue (R, G, B) subpixels has a current of about 15A. Is required, and an organic light emitting diode display device consisting of red, green, blue, and white (R, G, B, W) subpixels requires a current of about 7A, but the voltage drop due to the internal resistance of the display panel is about 5V or more. Can occur.

In the case of a display panel in which a first supply wiring, a driving thin film transistor, a light emitting diode, and a second supply wiring are connected between the high potential voltage ELVDD and the low potential voltage ELVSS, the first supply wiring and the driving thin film transistor , A voltage drop of about 5V, about 5V, about 12V, and about 1V may occur in the light emitting diode and the second supply wiring, respectively, resulting in a voltage drop of about 24V (including margin) as a whole.

As described above, as the size of the organic light emitting diode display device increases, the current consumption increases and the resistance of the supply wiring increases. As a result, power consumption increases, and the display quality of the image is degraded because the desired luminance cannot be displayed. .

The present invention has been proposed to solve this problem, and by forming the first and second power patterns corresponding to the front surface of the substrate, the voltage drop of the first and second power voltages is minimized to reduce power consumption and display an image. An object of the present invention is to provide an organic light emitting diode display device with improved quality and a manufacturing method thereof.

In addition, in the present invention, by forming the light emitting layer in a three-layer structure including at least one blue organic material layer and at least one green organic material layer, the driving current and the driving voltage are reduced, thereby reducing power consumption and Another object is to provide an organic light-emitting diode display device with improved display quality and a method for manufacturing the same.

In order to solve the above problems, the present invention, the first and second substrates facing each other and spaced apart, including red, green, and blue subpixels; A first power pattern disposed on the entire inner surface of the first substrate; A driving thin film transistor disposed on each of the red, green, and blue subpixels above the first power pattern and connected to the first power pattern; A second power pattern disposed to correspond to the entire side of the first substrate; Providing an organic light-emitting diode display comprising a light emitting diode connected to the driving thin film transistor and the red, green, and blue subpixels on the driving thin film transistor and the second power pattern, respectively, and connected to the driving thin film transistor and the second power pattern do.

In addition, the first substrate includes a display area for displaying an image including the red, green, and blue subpixels, and a non-display area surrounding the display area, and the first power pattern is It may have an area of 80% to 120%.

In addition, the first power pattern may have an opening corresponding to a circuit region including the driving thin film transistor.

In addition, the distance between adjacent openings may be 5 μm to 20 μm.

In addition, the second power pattern may have a width of at least 1/3 of one side of the red, green, and blue subpixels and less than one side of the red, green, and blue subpixels.

In addition, the driving thin film transistor includes an active layer, a gate electrode, a drain electrode, and a source electrode, the drain electrode is connected to one end of the first power pattern and the active layer, and the source electrode is the light emitting diode and It may be connected to the other end of the active layer.

In addition, the gate electrode and the second power pattern may be formed of the same layer and the same material.

In addition, the light emitting diode may include a first electrode, a light emitting layer, and a second electrode, the first electrode may be connected to the source electrode, and the second electrode may be connected to the second power pattern.

In addition, the emission layer may have a three-layer structure including at least one green organic material layer and at least one blue organic material layer.

In addition, the emission layer may have a three-layer structure including one green organic material layer and two blue organic material layers, or a three-layer structure including two green organic material layers and one blue organic material layer. have.

In addition, the organic light emitting diode display may include a color filter layer including red, green, and blue color filters respectively disposed on the red, green, and blue subpixels of the inner surface of the second substrate; A color conversion layer including a red and green conversion layer disposed on the red and green subpixels below the color filter layer may be further included.

On the other hand, the present invention, the step of forming a first power pattern on the inner surface of the first substrate including red, green, and blue subpixels; Forming a driving thin film transistor connected to the first power pattern in each of the red, green, and blue subpixels on the first power pattern; Forming a second power pattern so as to correspond to the entire side of the first substrate; And forming a light emitting diode connected to the driving thin film transistor and the second power pattern in each of the red, green, and blue subpixels above the driving thin film transistor and the second power pattern. Provides a manufacturing method.

In addition, the forming of the driving thin film transistor may include: forming an active layer on the first power supply pattern; Forming a gate electrode on the active layer; It may include forming a drain electrode and a source electrode connected to both ends of the active layer.

In addition, a method of manufacturing the organic light emitting diode display device includes forming a buffer layer between the first power supply pattern and the active layer; Forming a gate insulating layer between the active layer and the gate electrode; Forming an interlayer insulating layer between the gate electrode and the drain electrode and between the gate electrode and the source electrode; It may further include forming a protective layer between the drain electrode and the light emitting diode, and between the source electrode and the light emitting diode.

In the present invention, by forming the first and second power patterns corresponding to the entire surface of the substrate, a voltage drop of the first and second power voltages is minimized, thereby reducing power consumption and improving display quality of an image.

In addition, in the present invention, by forming the light emitting layer in a three-layer structure including at least one blue organic material layer and at least one green organic material layer, the driving current and the driving voltage are reduced, thereby reducing power consumption and It has the effect of improving display quality.

1 is a perspective view showing an electrical connection configuration of an organic light emitting diode display device according to a first embodiment of the present invention.
2 is a plan view of an organic light emitting diode display device according to a first embodiment of the present invention.
3 is a cross-sectional view of an organic light emitting diode display device according to a first embodiment of the present invention.
4 is a cross-sectional view showing an organic light emitting diode display device according to a second embodiment of the present invention.

Hereinafter, an organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

1 is a perspective view showing an electrical connection configuration of an organic light emitting diode display device according to a first embodiment of the present invention.

As shown in FIG. 1, the organic light emitting diode display device 110 according to the first embodiment of the present invention includes a first power pattern 122, a driving thin film transistor T, a second power pattern 132, and light emission. It includes a diode (D).

The first power pattern 122 to which the first power voltage is supplied is disposed on the upper front surface of the first substrate (120 in FIG. 3 ).

The driving thin film transistor T and the second power pattern 132 are disposed on the first power pattern 122, and the driving thin film transistor T is disposed on each subpixel (SPb, SPg, SPr in FIG. 2). , The second power pattern 122 is disposed in a horizontal column of each subpixel to correspond to the entire side (eg, a side in the horizontal direction (horizontal direction)) of the first substrate 120.

The second power pattern 122 to which the second power voltage is supplied may be formed of the same material and the same layer as the gate electrode of the driving thin film transistor T.

The light emitting diode (D) is disposed in each of the subpixels (SPb, SPg, SPr) above the driving thin film transistor (T) and the second power pattern 132, and the light emitting diodes (D) are first to third connected in series. It may include a diode.

The second electrode 160 of the light emitting diode D is formed on the entire surface of the first substrate 120.

Here, the drain electrode of the driving thin film transistor T is connected to the first power pattern 122, and the source electrode of the driving thin film transistor T is connected to the first electrode (152 in FIG. 3) of the light emitting diode D. do.

The second electrode 160 of the light emitting diode D is connected to the second power pattern 132.

For example, a high potential voltage ELVDD may be supplied to the first power pattern 122 as a first power voltage, and a low potential voltage ELVSS may be supplied to the second power pattern 132 as a second power voltage. Accordingly, the driving current may flow from the first power pattern 122 to the second power pattern 132 through the driving thin film transistor T and the light emitting diode D.

In this way, the first power supply voltage of the high potential voltage ELVDD is supplied through the first power pattern 122 corresponding to the front surface of the first substrate 120, and the first power supply voltage corresponding to the entire side of the first substrate 120 2 By supplying the second power voltage of the low potential voltage (ELVSS) through the power pattern 132, the voltage drop of the first and second power voltages can be minimized. As a result, power consumption is reduced and the display quality of the image This is improved.

The plan and cross-sectional configurations of the OLED display device 110 will be described with reference to the drawings.

2 is a plan view of an organic light emitting diode display device according to a first embodiment of the present invention, and FIG. 3 is a cross-sectional view of the organic light emitting diode display device according to the first embodiment of the present invention.

2 and 3, the organic light emitting diode display device 110 according to the embodiment of the present invention includes a first substrate 120, a first power pattern 122, a driving thin film transistor T, and It includes two power supply patterns 132 and a light emitting diode (D).

Here, the organic light emitting diode display 110 may be of a top emission type in which the light emitting diode D emits light upward in a direction opposite to the driving thin film transistor T.

Specifically, the first substrate 120 includes red, green, and blue subpixels SPr, SPg, and SPb arranged in a matrix form in the horizontal and vertical directions.

A first power pattern 122 is formed on the upper front surface of the first substrate 120, and the first power pattern 122 is a driving thin film transistor T for each of the red, green, and blue subpixels SPr, SPg, and SPb. It has an opening op corresponding to the circuit area CA including, and a first power voltage is supplied to the first power pattern 122.

The first power pattern 122 may be made of a metal material such as silver (Ag), copper (Cu), aluminum (Al), and an alloy thereof, and the high potential voltage ELVDD is controlled by the first power pattern 122. It can be supplied with 1 power voltage.

A buffer layer 124 is formed on the entire surface of the first substrate 120 on the first power pattern 122, and the circuit regions of each of the red, green, and blue subpixels SPr, SPg, and SPb above the buffer layer 124 ( CA), an active layer 126 is formed.

The buffer layer 124 may be made of an insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), photoacryl, benzocyclobutene, and the active layer 126 is polycrystalline silicon. It may be made of the same semiconductor material.

Although not illustrated, the active layer 126 may include a central channel region, a drain region on both sides of the channel region, and a source region.

A gate insulating layer 128 is formed on the entire surface of the first substrate 120 on the active layer 126, and a gate electrode 130 is formed on the gate insulating layer 128 corresponding to the active layer 126, A second power pattern 132 and a gate wiring GL are formed on the gate insulating layer 128 corresponding to the entire side of the first substrate 120 (for example, the side in the horizontal direction (horizontal direction)). , A second power voltage is supplied to the second power pattern 132.

The gate electrode 130, the second power pattern 132, and the gate wiring GL may be formed of the same layer and the same material.

The gate insulating layer 128 may be made of an insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), photoacryl, benzocyclobutene, and the gate electrode 130, the second power pattern The 132 and the gate wiring GL may be made of a metal material such as silver (Ag), copper (Cu), aluminum (Al), and an alloy thereof.

In addition, a low potential voltage ELVSS may be supplied to the second power pattern 132 as a second power voltage, and the second power pattern 132 and the gate wiring GL may be spaced apart from each other in parallel.

An interlayer insulating layer 134 is formed on the entire surface of the gate electrode 130, the second power pattern 132, and the first substrate 120 above the gate wiring GL, the interlayer insulating layer 134 and the gate insulating layer. 128), the buffer layer 124 includes a first contact hole 136 exposing the first power pattern 122, and the interlayer insulating layer 134 and the gate insulating layer 128 are drains of the active layer 126 It includes second and third contact holes 138 and 140 exposing the region and the source region, respectively.

The interlayer insulating layer 134 may be made of an insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), photoacryl, or benzocyclobutene.

A drain electrode connected to the first power pattern 122 through the first contact hole 136 and to the drain region of the active layer 126 through the second contact hole 138 on the interlayer insulating layer 134 The source electrode 144 connected to the source region of the active layer 126 through the 142 and the third contact hole 140, and the red, green, and blue subpixels SPr, intersecting the gate wiring GL. A data line (DL) defining each of SPg and SPb is formed.

The drain electrode 142, the source electrode 144, and the data line DL may be made of a metal material such as silver (Ag), copper (Cu), aluminum (Al), and an alloy thereof.

Here, the active layer 126, the gate electrode 130, the drain electrode 142, and the source electrode 144 constitute the driving thin film transistor T of the circuit region CA.

Although not shown, in the circuit area (CA) of each of the red, green, and blue subpixels (SPr, SPg, SPb), in addition to the driving thin film transistor (T), a number of such as switching thin film transistors, sensing thin film transistors, light emitting thin film transistors, and storage capacitors. The elements of can be arranged.

For example, the gate line GL and the data line DL are connected to the gate electrode and the source electrode of the switching thin film transistor, respectively, and the drain electrode of the switching thin film transistor is connected to the gate electrode 130 of the driving thin film transistor T. Can be connected.

A first power voltage is supplied to the first power pattern 122, and the first power pattern 122 has an opening corresponding to the circuit area CA of each of the red, green, and blue subpixels SPr, SPg, and SPb. op), electrical interference between the first power pattern 122 and a plurality of devices in the circuit area CA is minimized.

A protective layer 146 is formed on the entire surface of the first substrate 120 above the driving thin film transistor T, and the protective layer 146 is a fourth contact hole exposing the source electrode 144 of the driving thin film transistor T. 148, and the protective layer 146 and the interlayer insulating layer 134 include a fifth contact hole 150 exposing the second power pattern 132.

The protective layer 146 may be made of an insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), photoacryl, or benzocyclobutene.

Each of the red, green, and blue subpixels SPr, SPg, and SPb on the upper part of the protective layer 146 is connected to the source electrode 144 of the driving thin film transistor T through the fourth contact hole 148. An electrode 152 and a connection electrode 154 connected to the second power pattern 132 through the fifth contact hole 150 are formed.

The first electrode 152 and the connection electrode 154 may be made of a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO).

A light emitting layer 156 is formed on each of the red, green, and blue subpixels (SPr, SPg, and SPb) on the first electrode 152 and the connection electrode 154, and the connection electrode 154 is exposed on the light emitting layer 156. It includes a sixth contact hole (158).

The emission layer 156 may include at least one organic material layer, and at least one organic material layer includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting material layer (EML), an electron transport layer (ETL), It may include an electron injection layer (EIL).

For example, the light-emitting layer 156 includes red, green, and blue organic material layers of a one-layer structure (1 stack) disposed on red, green, and blue subpixels (SPr, SPg, SPb), respectively, or It may include a blue organic material layer having a three-layer structure (3 stacks) disposed on each of the green and blue subpixels SPr, SPg, and SPb.

A second electrode 160 connected to the connection electrode 154 through the sixth contact hole 158 is formed on the front surface of the first substrate 120 on the emission layer 156.

The second electrode 160 may be made of a metal material such as silver (Ag), copper (Cu), aluminum (Al), and an alloy thereof.

Here, the first electrode 152, the light emitting layer 156, and the second electrode 160 constitute the light emitting diode D.

For example, the first and second electrodes 152 and 160 may be an anode and a cathode, respectively, and a material constituting the first electrode 152 has a higher work function than a material constituting the second electrode 160 ( work function).

In the organic light emitting diode display 110, before forming the active layer 126 of the driving thin film transistor T, the first power pattern 122 is formed to correspond to the entire surface of the first substrate 120, and The second power pattern 132 is formed of the same layer and the same material as the gate electrode 130 of the transistor T to correspond to the entire side of the first substrate 120, thereby forming the drain electrode of the driving thin film transistor T. It is possible to minimize a voltage drop between the first power voltage applied to 142 and the second power voltage applied to the second electrode 160 of the light emitting diode D.

That is, each of the red, green, and blue subpixels (SPr, SPg, and SPb) is the first and second distances along the sides of the first substrate 120 in the horizontal direction (horizontal direction) and the vertical direction (vertical direction). d1, d2).

The opening op of the first power pattern 122 has a third distance d3 along the side in the horizontal direction of the first substrate 120, and the adjacent opening op of the first power pattern 122 is It has a fourth distance d4 along the side of the first substrate 120 in the horizontal direction.

From the opening op of the first power pattern 122 of each of the red, green, and blue subpixels (SPr, SPg, and SPb) to the lower gate wiring GL along the vertical side of the first substrate 120 It has a fifth distance d5, and the second power supply pattern 132 has a sixth distance d6 along a side of the first substrate 120 in the vertical direction.

For example, the first substrate 120 includes a display area including red, green, and blue subpixels (SPr, SPg, SPb) for displaying an image, and a ratio in which link wiring and pads are arranged around the display area. A display area is included, and the first power pattern 122 may have an area of about 80% to about 120% of the display area of the first substrate 120.

The fourth distance d4 between adjacent openings op of the first power pattern 122 may be about 5 μm to about 20 μm (preferably about 10 μm).

The sixth distance (d6) of the second power pattern 132 is approximately 1/3 or more and less than the second distance (d2) of the second distance (d2) of each of the red, green, and blue subpixels (SPr, SPg, SPb) Can be

As described above, in the organic light emitting diode display device 110 according to the first embodiment of the present invention, the first high potential voltage ELVDD is applied through the first power pattern 122 corresponding to the front surface of the first substrate 120. By supplying a power supply voltage and supplying a second power supply voltage of the low potential voltage ELVSS through the second power pattern 132 corresponding to the entire side of the first substrate 120, the first and second power voltages are Voltage drop can be minimized, resulting in reduced power consumption and improved image display quality.

Meanwhile, in another embodiment, the light emitting layer may be formed in a three-layer structure (3 stack) including a blue organic material layer and a green organic material layer, which will be described with reference to the drawings.

4 is a cross-sectional view illustrating an organic light emitting diode display device according to a second embodiment of the present invention, and descriptions of the same parts as those of the first embodiment are omitted.

As shown in FIG. 4, the organic light emitting diode display device 210 according to the second embodiment of the present invention includes first and second substrates 220 and 270 facing each other and spaced apart from each other, and inner surfaces of the first substrate 220 The light emitting diode D formed on the second substrate 270 includes a color filter layer 274 and a color conversion layer 276 formed on the inner surface of the second substrate 270, and the light emitting diode D includes a light emitting layer 256.

The first and second substrates 220 and 270 include red, green, and blue subpixels SPr, SPg, and SPb, respectively.

A bank 162 is formed at the boundary between the red, green, and blue subpixels (SPr, SPg, SPb) on the inner surface of the first substrate 220, and the red, green, and blue subpixels (SPr) are formed on the inner surface of the first substrate 220. , SPg, SPb) in the banks 162, respectively, there is formed a light-emitting layer 256, the light-emitting layer 256 has a three-layer structure (3 stack).

Specifically, the light emitting layer 256 includes first to third organic material layers 256a, 256b, and 256c sequentially formed on the inner surface of the first substrate 220.

For example, the first to third organic material layers 256a, 256b, and 256c may emit green light, blue light, and clean light, respectively, respectively, a hole injection layer (HIL), a hole transport layer (HTL), and a light emitting material. A layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) may be included.

In addition, a charge generation layer may be formed between the first and second organic material layers 256a and 256b and between the second and third organic material layers 256b and 256c, respectively.

A partition wall 272 is formed at the boundary between the red, green, and blue subpixels (SPr, SPg, and SPb) on the inner surface of the second substrate 270, and red, green, and blue subpixels ( Red, green, and blue color filters 274r, 274g, and 274b are formed inside the partition wall 272 of SPr, SPg, and SPb, respectively, and the red, green, and blue color filters 274r, 274g, and 274b are color filter layers ( 274).

The red, green, and blue color filters 274r, 274g, and 274b pass only red, green, and blue light of incident light, respectively, and absorb light of the remaining colors.

The color filter layer 274 is used to supplement the color purity and color coordinates of the organic light emitting diode display device 210. In the organic light emitting diode display device according to another embodiment, the color filter layer 274 may be omitted.

Red and green conversion layers 276r and 276g are formed on the red and green subpixels 276r and 276g below the color filter layer 274, respectively, and the red and green conversion layers 276r and 276g are the color conversion layers 276. Configure.

The red and green conversion layers 276r and 276g each use incident light to emit red light and green light. For example, the red and green conversion layers 276r and 276g each have a red quantum dot (QD) and a green quantum dot ( QD).

Although not shown, first and second electrodes (152 and 160 in FIG. 3) are formed on the lower and upper portions of the light emitting layer 256, respectively, and a driving thin film transistor (T in FIG. 3) is formed under the light emitting diode (D). I can.

Further, a first power supply pattern 122 corresponding to the front surface of the first substrate 220 and having an opening (op in FIG. 3) is formed under the driving thin film transistor (T in FIG. 3), and the driving thin film transistor ( A second power pattern (132 of FIG. 3) made of the same layer and the same material as the gate electrode (130 of FIG. 3) of T) and corresponding to the entire horizontal direction may be formed.

In such an organic light emitting diode display 210, a three-layer structure including a first organic material layer 256a as a green organic material layer and second and third organic material layers 256b and 256c as a blue organic material layer. Red light, green light, and blue light are emitted using the emission layer 256.

Specifically, in the red, green, and blue subpixels SPr, SPg, and SPb, the first organic material layer 256a emits green light, and the second and third organic material layers 256b and 256c emit blue light.

In the red sub-pixel SPr, the green light of the first organic material layer 256a is converted into red light of a wavelength longer than the green light by the red conversion layer 276r, and then passes through the red color filter 274r to red light Lr. The blue light of the second and third organic material layers 256b and 256c is converted into red light having a wavelength longer than that of blue light by the red conversion layer 276r, and passes through the red color filter 274r to pass the red light Lr. ).

In the green subpixel (SPg), the green light of the first organic material layer 256a passes through the green conversion layer 276g and the green color filter 274g, and is emitted as green light (Lg), and the second and third organic materials The blue light of the layers 256b and 256c is converted into green light having a wavelength longer than that of blue light by the green conversion layer 276gr, and then passes through the green color filter 274g to be emitted as green light LG.

In the blue subpixel SPb, green light of the first organic material layer 256a is absorbed by the blue color filter 274b and is not emitted to the outside, and blue light of the second and third organic material layers 256b and 256c is It passes through the blue color filter 274b and is emitted as blue light Lb.

In the second embodiment, a green organic material layer, a blue organic material layer, and a blue organic material layer are sequentially formed on the first substrate 220, but in other embodiments, a blue organic material layer is formed on the first substrate 220. An organic material layer, a green organic material layer, and a blue organic material layer may be sequentially formed, or a blue organic material layer, a blue organic material layer, and a green organic material layer may be sequentially formed on the first substrate 220.

In the second embodiment, the emission layer 256 is composed of one green organic material layer and two blue organic material layers, but in another embodiment, the emission layer is composed of two green organic material layers and one blue organic material layer. By configuring, a green organic material layer, a green organic material layer, and a blue organic material layer are sequentially formed on the first substrate 220, or a green organic material layer, a blue organic material layer, and A green organic material layer may be sequentially formed, or a blue organic material layer, a green organic material layer, and a green organic material layer may be sequentially formed on the first substrate 220.

As described above, in the organic light emitting diode display device 210 according to the second embodiment of the present invention, since the light efficiency of the first organic material layer 256a emitting green light is excellent, red, green, and blue subpixels (SPr, The luminance of white light emitted from SPg and SPb) is improved.

In addition, since the red conversion layer 276r of the red subpixel SPr converts not only blue light but also green light into red light, light efficiency is improved.

In addition, since the light emitting layer 256 has a three-layer structure of the first to third organic material layers 256a, 256b, and 256c, the voltage applied to the entire light emitting diode D is reduced, thereby reducing power consumption.

Although the above has been described with reference to preferred embodiments of the present invention, those skilled in the art will variously modify and change the present invention within the scope not departing from the spirit and scope of the present invention described in the following claims. You will understand that you can do it.

110: organic light emitting diode display device 120: first substrate
122: first power supply pattern T: driving thin film transistor
132: second power supply pattern D: light-emitting diode
256a, 256b, 256c: first to third organic material layers
274r, 274g, 274b: red, green, blue color filters
276r, 276g: red, green transition layer

Claims (16)

First and second substrates facing each other and spaced apart from each other and including red, green, and blue subpixels;
A first power pattern disposed on the entire inner surface of the first substrate;
A gate line and a data line crossing each other to define each of the red, green, and blue subpixels;
A driving thin film transistor disposed on each of the red, green, and blue subpixels above the first power pattern and connected to the first power pattern;
A second power pattern disposed to correspond to an entire side of the first substrate and spaced parallel to the gate wiring;
A light emitting diode disposed in each of the red, green, and blue subpixels above the driving thin film transistor and the second power pattern, and connected to the driving thin film transistor and the second power pattern
Organic light emitting diode display device comprising a.
The method of claim 1,
The first substrate includes a display area for displaying an image including the red, green, and blue subpixels, and a non-display area surrounding the display area,
The first power pattern has an area of 80% to 120% of the display area.
The method of claim 1,
The first power pattern is an organic light emitting diode display device having an opening corresponding to a circuit region including the driving thin film transistor.
The method of claim 3,
The organic light emitting diode display device has a distance between adjacent openings of 5 μm to 20 μm.
The method of claim 1,
The second power pattern is an organic light emitting diode display device having a width of at least 1/3 of one side of the red, green, and blue subpixels and less than one side of the red, green, and blue subpixels.
The method of claim 1,
The driving thin film transistor includes an active layer, a gate electrode, a drain electrode, and a source electrode,
The drain electrode is connected to one end of the first power pattern and the active layer, and the source electrode is connected to the light emitting diode and the other end of the active layer.
The method of claim 6,
The gate electrode and the second power pattern are formed of the same layer and the same material as the organic light emitting diode display.
The method of claim 6,
The light emitting diode includes a first electrode, a light emitting layer, and a second electrode,
The first electrode is connected to the source electrode, and the second electrode is connected to the second power pattern.
The method of claim 8,
The light emitting layer is an organic light emitting diode display device having a three-layer structure including at least one green organic material layer and at least one blue organic material layer.
The method of claim 9,
The emission layer has a three-layer structure including one green organic material layer and two blue organic material layers, or an organic light-emitting diode having a three-layer structure including two green organic material layers and one blue organic material Display device.
The method of claim 1,
A color filter layer including red, green, and blue color filters respectively disposed on the red, green, and blue subpixels on the inner surface of the second substrate;
A color conversion layer including a red and green conversion layer disposed in the red and green subpixels below the color filter layer, respectively
An organic light emitting diode display device further comprising a.
Forming a first power pattern on the entire inner surface of the first substrate including red, green, and blue subpixels;
Forming a gate line and a data line crossing each other to define each of the red, green, and blue subpixels;
Forming a driving thin film transistor connected to the first power pattern in each of the red, green, and blue subpixels on the first power pattern;
Forming a second power pattern to correspond to the entire side of the first substrate and to be parallelly spaced apart from the gate wiring;
Forming a light emitting diode connected to the driving thin film transistor and the second power pattern in each of the red, green, and blue subpixels above the driving thin film transistor and the second power pattern
Method of manufacturing an organic light emitting diode display device comprising a.
The method of claim 12,
The step of forming the driving thin film transistor,
Forming an active layer over the first power pattern;
Forming a gate electrode on the active layer;
Forming a drain electrode and a source electrode connected to both ends of the active layer
Method of manufacturing an organic light emitting diode display device comprising a.
The method of claim 13,
Forming a buffer layer between the first power pattern and the active layer;
Forming a gate insulating layer between the active layer and the gate electrode;
Forming an interlayer insulating layer between the gate electrode and the drain electrode and between the gate electrode and the source electrode;
Forming a protective layer between the drain electrode and the light emitting diode, and between the source electrode and the light emitting diode
The method of manufacturing an organic light emitting diode display device further comprising a.
The method of claim 1,
The driving thin film transistor includes an active layer, a gate electrode, a drain electrode, and a source electrode,
The light emitting diode includes a first electrode, a light emitting layer, and a second electrode,
A gate insulating layer is disposed between the active layer and the gate electrode,
An interlayer insulating layer is disposed between the gate electrode and the drain electrode and between the gate electrode and the source electrode,
A protective layer is disposed between the drain electrode and the first electrode and between the source electrode and the first electrode,
The second power pattern, the gate wiring, and the gate electrode are formed of the same material and the same layer on the gate insulating layer.
The method of claim 15,
Further comprising a connection electrode disposed on the protective layer,
The connection electrode is in direct contact with the second power pattern through a contact hole of the interlayer insulating layer and the protective layer,
The second electrode is in direct contact with the connection electrode through a contact hole of the emission layer.

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