KR102185750B1 - A method for manufacturing the wheel of dry polishing - Google Patents
A method for manufacturing the wheel of dry polishing Download PDFInfo
- Publication number
- KR102185750B1 KR102185750B1 KR1020190161643A KR20190161643A KR102185750B1 KR 102185750 B1 KR102185750 B1 KR 102185750B1 KR 1020190161643 A KR1020190161643 A KR 1020190161643A KR 20190161643 A KR20190161643 A KR 20190161643A KR 102185750 B1 KR102185750 B1 KR 102185750B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- silica
- dry polishing
- wheel
- dry
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 드라이폴리싱 휠 제조방법에 관한 것으로서, 보다 상세하게는 실리콘 웨이퍼 내부에 들어 있는 작은 결함층을 줄이고, 이 결함층 구조 속의 금속 이온 따위에 에너지를 공급하여 활발하게 움직이게 한 후, 이것을 연마 손상 위치에서 전기적으로 움직이지 못하도록 가두는 게터링용 드라이폴리싱 휠 제조방법에 관한 것이다. The present invention relates to a dry polishing wheel manufacturing method, and more particularly, to reduce a small defect layer in a silicon wafer, supply energy to metal ions in the defect layer structure to make it move actively, and damage it by polishing. It relates to a method of manufacturing a dry polishing wheel for gettering that is confined to prevent electrical movement in position.
실리콘 웨이퍼 내부의 작은 결함을 줄이기 위해서는 상기 실리콘 웨이퍼의 두께를 줄여야 하지만, 일반적인 백 그라인딩(Back Grinding : 실리콘 웨이퍼의 패턴부 뒷 면을 연마하는 것)으로서는, 대형 웨이퍼인 경우 실리콘 웨이퍼보다 강한 강도의 다이아몬드 지립을 사용하여 가공한다. In order to reduce small defects in the silicon wafer, the thickness of the silicon wafer must be reduced. However, as a general back grinding (polishing the back side of the pattern part of the silicon wafer), a diamond having a stronger strength than a silicon wafer in the case of a large wafer It is processed using abrasive grains.
이 경우 실리콘 웨이퍼와 다이아몬드의 접촉점에서 순간적으로 강한 에너지에 의하여 일방적으로 실리콘 웨이퍼를 깸으로 인하여, 웨이퍼의 순간적인 깨진 부분 주위에 손상을 주어, 일정 이하의 두께로 가공하면 웨이퍼가 깨질 가능성이 높다. In this case, since the silicon wafer is unilaterally broken by an instantaneous strong energy at the contact point between the silicon wafer and the diamond, damage is caused around the instantaneous broken part of the wafer, and the wafer is likely to be broken if processed to a thickness less than a certain thickness.
이렇게 백 그라인딩에 의하여 실리콘 웨이퍼가 깨지는 것은, 다이아몬드 지립의 경도가 실리콘 웨이퍼 경도와 차이가 커서, 실리콘 웨이퍼의 극히 일부분에 에너지가 집중되어서 발생하는 것이다. 따라서 이를 방지하기 위하여, 실리콘과의 경도 차이가 큰 지립(DIA, CBN)의 사용을 지양하고, 실리콘과 비슷한 경도를 가지는 물질을 지립으로 사용할 필요가 있다. The reason why the silicon wafer is broken by the back grinding is caused by the concentration of energy in a very small portion of the silicon wafer because the hardness of the diamond abrasive grains is different from the hardness of the silicon wafer. Therefore, in order to prevent this, it is necessary to avoid the use of abrasive grains (DIA, CBN) having a large difference in hardness from silicon, and to use a material having a hardness similar to that of silicon as abrasive grains.
본 발명이 해결하고자 하는 기술적 과제는 실리콘 웨이퍼 내부에 들어 있는 작은 결함층을 줄이고, 이 결함층 구조 속의 금속 이온 따위에 에너지를 공급하여 활발하게 움직이게 한 후, 이것을 연마 손상 위치에서 전기적으로 움직이지 못하도록 가두는 게터링용 드라이폴리싱 휠 제조방법을 제공하는 것이다. The technical problem to be solved by the present invention is to reduce the small defect layer in the silicon wafer, supply energy to the metal ions in the defect layer structure to make it move actively, and then prevent it from moving electrically at the location of the polishing damage. It is to provide a method of manufacturing a dry polishing wheel for trapped gettering.
전술한 기술적 과제를 해결하기 위한 본 발명에 따른 드라이폴리싱용 휠 제조방법은, 1) 고형분 실리카와 폴리비닐알콜(PVA) 접착제를 물속에서 혼합시켜 슬러리를 제조하는 단계; 2) 전 단계에서 제조된 슬러리를 건조 열풍 속에서 분사하여 실리카 입자를 형성하는 단계; 3) 상기 실리카 입자에 산화제 용액을 침투시킨 후 건조하여 기본 지립을 제조하는 단계; 4) 상기 기본 지립에 충진제와 접착제를 혼합하고 성형하여 드라이폴리싱용 휠을 제조하는 단계;를 포함한다. The method for manufacturing a wheel for dry polishing according to the present invention for solving the above technical problem includes: 1) preparing a slurry by mixing solid silica and polyvinyl alcohol (PVA) adhesive in water; 2) forming silica particles by spraying the slurry prepared in the previous step in dry hot air; 3) preparing basic abrasive grains by infiltrating an oxidizing agent solution into the silica particles and drying them; 4) mixing and molding a filler and an adhesive in the basic abrasive grains to prepare a dry polishing wheel; includes.
그리고 본 발명에서 상기 폴리비닐알콜 접착제는, 상기 고형분 실리카의 1 ~ 2 wt% 의 비율로 혼합되는 것이 바람직하다. And in the present invention, the polyvinyl alcohol adhesive is preferably mixed in a ratio of 1 to 2 wt% of the solid silica.
또한 본 발명에서 상기 고형분 실리카에는, 친수성 흄드 실리카가 전체 실리카의 0.01 ~ 0.1 wt % 의 비율로 포함되는 것이 바람직하다. In addition, in the solid silica in the present invention, it is preferable that hydrophilic fumed silica is included in a ratio of 0.01 to 0.1 wt% of the total silica.
또한 본 발명에서 상기 2) 단계는, 100 ~ 250℃ 온도의 건조 열풍 속에서 스핀 또는 스프레이 분사 방법으로 상기 슬러리를 분사하는 것이 바람직하다. In addition, in the step 2) in the present invention, it is preferable to spray the slurry by a spin or spray spray method in a dry hot air at a temperature of 100 to 250°C.
또한 본 발명에서 상기 산화제는 280 ~ 320 ℃의 온도에서 분해되는 산화제인 것이 바람직하다. In addition, the oxidizing agent in the present invention is preferably an oxidizing agent that decomposes at a temperature of 280 ~ 320 ℃.
또한 본 발명에서 상기 산화제는 KMnO4 또는 NaAsO3 인 것이 바람직하다. In addition, in the present invention, the oxidizing agent is preferably KMnO 4 or NaAsO 3 .
또한 본 발명에서 상기 충진제는 직경 10±1 ㎛, 길이 1±0.1 mm 의 탄소섬유인 것이 바람직하다. In addition, in the present invention, the filler is preferably a carbon fiber having a diameter of 10 ± 1 µm and a length of 1 ± 0.1 mm.
또한 본 발명에서 상기 접착제는 고형분 20%의 코로이달 실리카인 것이 바람직하다. In addition, in the present invention, the adhesive is preferably a solid content of 20% coroidal silica.
본 발명에 의하여 제조되는 드라이폴리싱용 휠은 실리콘과 비숫한 경도를 가지므로, 폴리싱 과정에서 실리콘의 마모속도와 패드의 마모속도가 비슷하여 일반적인 그라인딩 작업에 비해 슬러지가 2배로 발생하는데, 본 발명의 드라이폴리싱용 휠은 충분히 큰 슬러지 배출 통고가 형성되어 원활한 슬러지 배출이 가능하다. Since the wheel for dry polishing manufactured according to the present invention has a hardness comparable to that of silicon, the wear rate of silicon and the wear rate of the pad are similar in the polishing process, so that sludge is generated twice as compared to the general grinding operation. The dry polishing wheel has a sufficiently large sludge discharge notice to enable smooth sludge discharge.
또한 본 발명에 의하여 제조되는 드라이폴리싱용 휠의 폴리싱 작업에 의하여 깨져 나온 실리콘은 곧바로 패드 내의 지립 속에 들어 있는 산화제에 의하여 발생하는 산소에 의하여 산화됨으로, 가공하고 있는 웨이퍼 표면의 실리콘 산화물과 동일한 화학 성분으로 된다. 따라서 전기적 화학적 특성이 동일하여 슬러지가 쉽게 분리되는 장점도 있다. In addition, since the silicon broken by the polishing operation of the dry polishing wheel manufactured according to the present invention is immediately oxidized by oxygen generated by the oxidizing agent contained in the abrasive grains in the pad, the same chemical composition as the silicon oxide on the wafer surface being processed. Becomes. Therefore, there is an advantage in that the sludge is easily separated due to the same electrical and chemical properties.
도 1은 본 발명의 일 실시예에 따른 드라이폴리싱용 휠 제조방법의 공정도이다.
도 2는 본 발명의 일 실시예에 따른 스프레이 방식 입자 제조기 사진이다. 1 is a flowchart of a method of manufacturing a wheel for dry polishing according to an embodiment of the present invention.
2 is a photograph of a spray-type particle maker according to an embodiment of the present invention.
이하에서는 첨부된 도면을 참조하여 본 발명의 구체적인 실시예를 상세하게 설명한다. Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 실시예에 따른 드라이폴리싱용 휠 제조방법은, 도 1에 도시된 바와 같이, 슬러리 제조 단계(S100)로 시작된다. 이 단계(S100)에서는 고형분 실리카와 폴리비날알콜 접착제를 물속에서 혼합시켜 슬러리(Slurry)를 만든다. 이때 상기 폴리비닐알콜 접착제는, 상기 고형분 실리카의 1 ~ 2 wt% 의 비율로 혼합되는 것이 바람직하다. The method of manufacturing a wheel for dry polishing according to the present embodiment begins with a slurry manufacturing step (S100), as shown in FIG. 1. In this step (S100), a slurry is prepared by mixing solid silica and polyvinal alcohol adhesive in water. At this time, the polyvinyl alcohol adhesive is preferably mixed in a ratio of 1 to 2 wt% of the solid silica.
그리고 상기 고형분 실리카에는, 씨드(Seed)로 친수성 흄드 실리카가 전체 실리카의 0.01 ~ 0.1 wt % 의 비율로 포함되는 것이 바람직하다. In addition, it is preferable that the solid silica contains hydrophilic fumed silica as a seed in a ratio of 0.01 to 0.1 wt% of the total silica.
다음으로는 도 1에 도시된 바와 같이, 실리카 입자를 형성하는 단계(S200)가 진행된다. 이 단계(S200)는 전단계(S100)에서 제조된 슬러리를 건조 열풍 속에서 분사하여 미세한 코로이달 실리카(Coroidal Silica)의 뭉치로 이루어진 큰 실리카 입자를 얻게 된다. Next, as shown in FIG. 1, a step (S200) of forming silica particles proceeds. In this step (S200), the slurry prepared in the previous step (S100) is sprayed in a dry hot air to obtain large silica particles composed of a bunch of fine coroidal silica.
이 단계(S200)에서는 스핀(Spin) 분사 제조기 또는 도 2에 도시된 바와 같이, 스프레이 분사 입자 제조기를 통해서 상기 슬러리를 분사시키고 건조시켜 큰 입자의 실리카를 얻는 것이다. In this step (S200), the slurry is sprayed and dried through a spin spray maker or a spray spray particle maker as shown in FIG. 2 to obtain large particles of silica.
이 단계(S200)에서 온도와 스핀 속도를 이용하여 형성되는 입자의 크기를 조절할 수 있다. 예를 들어 600 RPM의 스핀 속도에서 공기 온도를 150℃로 하고 정체 시간을 약 5초의 조건으로 하면, 300 ㎛ 크기의 입자를 얻을 수 있다. In this step (S200), the size of the formed particles may be adjusted using the temperature and the spin speed. For example, at a spin speed of 600 RPM, if the air temperature is set to 150°C and the stagnation time is set to about 5 seconds, particles having a size of 300 μm can be obtained.
그리고 1800 RPM의 스핀 속도에서 공기 온도를 200℃로 하고, 정체 시간을 약 3초의 조건으로 하면, 더 작은 30±8㎛ 크기의 원형 입자를 얻을 수 있다. In addition, if the air temperature is set to 200°C at a spin speed of 1800 RPM and the stagnation time is set to about 3 seconds, smaller circular particles having a size of 30±8 μm can be obtained.
다음으로 도 1에 도시된 바와 같이, 기본 지립을 제조하는 단계(S300)가 진행된다. 이 단계(S300)에서는 전 단계(S200)에서 제조된 상기 실리카 입자에 산화제 용액을 입자 내부로 침투시킨 후 건조시켜서 기본 지립을 제조한다. 이때 상기 상기 산화제는 280 ~ 320 ℃의 온도에서 분해되는 산화제인 것이 바람직하며, 예를 들어 상기 산화제는 KMnO4 또는 NaAsO3 인 것이 바람직하다. 이러한 기본 지립은 도전성이 있어서 제전 효과를 나타내는 장점이 있다. Next, as shown in FIG. 1, a step (S300) of manufacturing a basic abrasive is performed. In this step (S300), a basic abrasive is prepared by infiltrating an oxidizing agent solution into the silica particles prepared in the previous step (S200) and drying them. In this case, the oxidizing agent is preferably an oxidizing agent that decomposes at a temperature of 280 to 320 °C, and for example, the oxidizing agent is preferably KMnO 4 or NaAsO 3 . These basic abrasive grains are conductive and have an advantage of showing an antistatic effect.
다음으로는 도 1에 도시된 바와 같이, 최종적으로 드라이폴리싱용 휠을 제조하는 단계(S400)가 진행된다. 이 단계(S400)에서는 전 단계(S300)에서 제조되는 상기 기본 지립에 충진제와 접착제를 혼합하고, 이들을 미리 정해진 형상으로 성형하여 드라이폴리싱용 휠을 제조한다. Next, as shown in FIG. 1, a step (S400) of finally manufacturing a wheel for dry polishing proceeds. In this step (S400), a filler and an adhesive are mixed with the basic abrasive particles prepared in the previous step (S300), and molded into a predetermined shape to manufacture a dry polishing wheel.
여기에서 상기 충진제는 상기 기본 지립들 사이에서 충격 흡수제 및 충진제기능을 수행하며, 충분한 충격 흡수와 자체 도전성을 위하여 상기 충진제는 탄소 섬유(Carbon Fiber)로 이루어지는 것이 바람직하다. 특히, 상기 탄소 섬유는 직경 10±1 ㎛, 길이 1±0.1 mm 의 탄소섬유인 것이 더욱 바람직하다. Here, the filler functions as a shock absorber and a filler between the basic abrasive grains, and the filler is preferably made of carbon fiber for sufficient shock absorption and self-conductivity. Particularly, the carbon fiber is more preferably a carbon fiber having a diameter of 10 ± 1 µm and a length of 1 ± 0.1 mm.
그리고 상기 접착체는 상기 기본 지립들을 접착시키는 구성요소이며, 상기 접착제는 고형분 20%의 코로이달 실리카인 것이, 기본 지립 사이를 접착하면서도 충격을 흡수하고, 충분히 큰 슬러지 통로를 형성할 수 있어서 바람직하다. In addition, the adhesive is a component that bonds the basic abrasive grains, and the adhesive is preferably coroidal silica having a solid content of 20%, because it can absorb impact while adhering between the basic abrasive grains and form a sufficiently large sludge passage. .
Claims (5)
2) 전 단계에서 제조된 슬러리를 건조 열풍 속에서 분사하여 실리카 입자를 형성하는 단계;
3) 상기 실리카 입자에 산화제 용액을 침투시킨 후 건조하여 기본 지립을 제조하는 단계;
4) 상기 기본 지립에 충진제와 접착제를 혼합하고 성형하여 드라이폴리싱용 휠을 제조하는 단계;를 포함하며,
상기 산화제는,
280 ~ 320 ℃의 온도에서 분해되는 KMnO4 또는 NaAsO3 인 것을 특징으로 하는 드라이폴리싱용 휠 제조방법. 1) preparing a slurry by mixing solid silica and polyvinyl alcohol (PVA) adhesive in water;
2) forming silica particles by spraying the slurry prepared in the previous step in dry hot air;
3) preparing basic abrasive grains by infiltrating an oxidizing agent solution into the silica particles and drying them;
4) manufacturing a dry polishing wheel by mixing and molding a filler and an adhesive in the basic abrasive grain; including,
The oxidizing agent,
Dry polishing wheel manufacturing method, characterized in that the KMnO 4 or NaAsO 3 decomposed at a temperature of 280 ~ 320 ℃.
상기 고형분 실리카의 1 ~ 2 wt% 의 비율로 혼합되는 것을 특징으로 하는 드라이폴리싱용 휠 제조방법. The method of claim 1, wherein the polyvinyl alcohol adhesive,
A method of manufacturing a wheel for dry polishing, characterized in that it is mixed in a ratio of 1 to 2 wt% of the solid silica.
친수성 흄드 실리카가 전체 실리카의 0.01 ~ 0.1 wt % 의 비율로 포함되는 것을 특징으로 하는 드라이폴리싱용 휠 제조방법. The method of claim 1, wherein in the solid silica,
A method for manufacturing a wheel for dry polishing, characterized in that the hydrophilic fumed silica is contained in an amount of 0.01 to 0.1 wt% of the total silica.
100 ~ 250℃ 온도의 건조 열풍 속에서 스핀 또는 스프레이 분사 방법으로 상기 슬러리를 분사하는 것을 특징으로 하는 드라이폴리싱용 휠 제조방법. The method of claim 1, wherein step 2),
Dry polishing wheel manufacturing method, characterized in that injecting the slurry in a dry hot air at a temperature of 100 ~ 250 ℃ spin or spray spraying method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190161643A KR102185750B1 (en) | 2019-12-06 | 2019-12-06 | A method for manufacturing the wheel of dry polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190161643A KR102185750B1 (en) | 2019-12-06 | 2019-12-06 | A method for manufacturing the wheel of dry polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR102185750B1 true KR102185750B1 (en) | 2020-12-02 |
Family
ID=73791443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190161643A KR102185750B1 (en) | 2019-12-06 | 2019-12-06 | A method for manufacturing the wheel of dry polishing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102185750B1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447255B1 (en) * | 2001-12-31 | 2004-09-07 | 주식회사 하이닉스반도체 | Composition of impregnated abrasive layer and polishing pad using the same |
| JP5189396B2 (en) * | 2008-04-01 | 2013-04-24 | 富士紡ホールディングス株式会社 | Polishing pad and method of manufacturing polishing pad |
| JP2014084420A (en) * | 2012-10-24 | 2014-05-12 | Tosoh Corp | Manganese oxide polishing agent for free abrasive grain polishing, and method for producing the agent |
-
2019
- 2019-12-06 KR KR1020190161643A patent/KR102185750B1/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447255B1 (en) * | 2001-12-31 | 2004-09-07 | 주식회사 하이닉스반도체 | Composition of impregnated abrasive layer and polishing pad using the same |
| JP5189396B2 (en) * | 2008-04-01 | 2013-04-24 | 富士紡ホールディングス株式会社 | Polishing pad and method of manufacturing polishing pad |
| JP2014084420A (en) * | 2012-10-24 | 2014-05-12 | Tosoh Corp | Manganese oxide polishing agent for free abrasive grain polishing, and method for producing the agent |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI300024B (en) | ||
| JPH04226862A (en) | Grain article | |
| EP1598147A2 (en) | Vitrified bond grindstone and manufacturing process thereof | |
| JP2002222780A (en) | Surface polishing method of silicon wafer | |
| CN104002252A (en) | Superfine abrasive biomacromolecule flexible polishing film and preparing method thereof | |
| KR101828867B1 (en) | Preparation method of single crystal diamond grit | |
| CN1302512C (en) | Electrode member for plasma treating appts., plasma treating appts. and plasma treating method | |
| KR20200044726A (en) | Single crystal silicon carbide substrate with high flatness and low damage and its manufacturing method | |
| CN113997213B (en) | Ceramic diamond grinding wheel for thinning SiC wafer and manufacturing method thereof | |
| CN110291618A (en) | The polishing method of silicon wafer and the manufacturing method of silicon wafer | |
| KR102185750B1 (en) | A method for manufacturing the wheel of dry polishing | |
| JP2007290101A (en) | Vitrified bond grindstone and its manufacturing method | |
| KR100373846B1 (en) | Semiconductor and optic polishing pad and method for manufacturing the same | |
| CN1187406A (en) | New chemical mechanical polishing process for layers of isolating material based on silicon derivatives or silicon | |
| JPH03264263A (en) | Porous metal bond grinding wheel and manufacture thereof | |
| JP5419173B2 (en) | Super abrasive wheel and grinding method using the same | |
| KR101010347B1 (en) | Method For Manufacturing Diamond Grinding Tool, Diamond Grinding Tool By The Same Manufacturing Method | |
| KR100935897B1 (en) | Polishing method | |
| CN104149041A (en) | Method for manufacturing ceramic grinding wheel for silicon rod polishing by means of organic matter sponge in shaping mode | |
| CN110153908A (en) | A kind of alusil alloy bonding agent diamond-impregnated wheel and its manufacturing method | |
| KR102184526B1 (en) | A method for manufacturing the pad or drypolishing | |
| JP2006181683A (en) | Polishing tool and its manufacturing method | |
| JPH02311273A (en) | Pva grinding stone and manufacture of this | |
| JP3983633B2 (en) | Grinding wheel and grinding method | |
| CN108857949A (en) | The manufacturing method of skive |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |