KR102185623B9 - Thin film deposition apparatus and thin film deposition method - Google Patents
Thin film deposition apparatus and thin film deposition methodInfo
- Publication number
- KR102185623B9 KR102185623B9 KR1020190058778A KR20190058778A KR102185623B9 KR 102185623 B9 KR102185623 B9 KR 102185623B9 KR 1020190058778 A KR1020190058778 A KR 1020190058778A KR 20190058778 A KR20190058778 A KR 20190058778A KR 102185623 B9 KR102185623 B9 KR 102185623B9
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film deposition
- deposition method
- deposition apparatus
- thin
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190058778A KR102185623B1 (en) | 2019-05-20 | 2019-05-20 | Thin film deposition apparatus and thin film deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190058778A KR102185623B1 (en) | 2019-05-20 | 2019-05-20 | Thin film deposition apparatus and thin film deposition method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| KR20200133493A KR20200133493A (en) | 2020-11-30 |
| KR102185623B1 KR102185623B1 (en) | 2020-12-02 |
| KR102185623B9 true KR102185623B9 (en) | 2023-06-09 |
Family
ID=73641849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190058778A KR102185623B1 (en) | 2019-05-20 | 2019-05-20 | Thin film deposition apparatus and thin film deposition method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102185623B1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
| KR20230156441A (en) | 2019-08-16 | 2023-11-14 | 램 리써치 코포레이션 | Spatially tunable deposition to compensate within wafer differential bow |
| KR102650914B1 (en) * | 2021-11-17 | 2024-03-26 | 주식회사 테스 | Substrate processing apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004211112A (en) * | 2002-12-26 | 2004-07-29 | Canon Inc | Apparatus for treating substrate |
| KR101432157B1 (en) * | 2013-02-06 | 2014-08-20 | 에이피시스템 주식회사 | Substrate support and apparatus for treating substrate having thereof substrate support |
| KR101564962B1 (en) * | 2014-01-29 | 2015-11-03 | 주식회사 루미스탈 | Substrate treating apparatus for etching the back-side surface of substrate and method of treating substrate with using this |
| US9881788B2 (en) * | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
| KR20160005462A (en) * | 2014-07-07 | 2016-01-15 | 세메스 주식회사 | Apparatus and method for treating a subtrate |
-
2019
- 2019-05-20 KR KR1020190058778A patent/KR102185623B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200133493A (en) | 2020-11-30 |
| KR102185623B1 (en) | 2020-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| G170 | Re-publication after modification of scope of protection [patent] |