KR102173465B1 - Apparatus for doping of wafer type solar cell - Google Patents

Abstract

The present invention relates to a doping apparatus for a substrate-type solar cell to simplify a doping process. The doping apparatus for a substrate-type solar cell according to the present invention comprises: a substrate support means for supporting a semiconductor substrate on which a dopant material is formed; A plasma doping member configured to selectively form a dopant region in a predetermined region of the semiconductor substrate by spraying plasma onto the dopant material to selectively dope a dopant in a predetermined region of the semiconductor substrate; A gas supply unit supplying an inert gas to the plasma doping member; And a power supply unit supplying plasma power to the plasma doping member and grounding the substrate support means.

Description

Substrate type solar cell doping device {APPARATUS FOR DOPING OF WAFER TYPE SOLAR CELL}

The present invention relates to a solar cell, and more particularly, to a substrate-type solar cell and a method of manufacturing the same, and a doping method and apparatus for the substrate-type solar cell to simplify the doping process.

Solar cells are devices that convert light energy into electrical energy using the properties of a semiconductor.

Briefly explaining the structure and principle of a solar cell, the solar cell has a PN junction structure in which a P (positive) type semiconductor and an N (negative) type semiconductor are bonded, and when sunlight is incident on a solar cell of this structure, Holes and electrons are generated in the semiconductor by the energy of incident sunlight. At this time, the holes (+) move toward the P-type semiconductor due to the electric field generated in the PN junction and the electrons The minus sign moves toward the N-type semiconductor and a potential is generated so that power can be produced.

Such solar cells can be classified into thin-film solar cells and substrate-type solar cells.

The thin-film solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass, and the substrate-type solar cell is a solar cell manufactured using a semiconductor material such as silicon itself as a substrate.

The substrate-type solar cell has a disadvantage in that it has a thicker thickness and requires the use of an expensive material compared to the thin-film solar cell, but has an advantage of excellent battery efficiency.

Hereinafter, a conventional substrate-type solar cell will be described with reference to the drawings.

1 is a schematic cross-sectional view of a conventional substrate-type solar cell.

As can be seen from FIG. 1, a conventional substrate-type solar cell includes a P-type semiconductor substrate 10, an N-type semiconductor layer 20, an antireflection layer 30, a P ⁺ type semiconductor layer 40, and a front electrode 50. , And a rear electrode 60.

The P-type semiconductor substrate 10 and the N-type semiconductor layer 20 formed on the upper surface thereof constitute a PN junction structure of a solar cell, and the upper surfaces of the P-type semiconductor substrate 10 and the N-type semiconductor layer 20 are It is formed in an uneven structure so that sunlight can be absorbed into the solar cell as much as possible.

The antireflection layer 30 serves to minimize reflection of incident light and prevents electrons formed in the N-type semiconductor layer 20 from recombining and disappearing.

The P ⁺ type semiconductor layer 40 is formed on the lower surface of the P type semiconductor substrate 10 and serves to prevent electrons formed by sunlight from being recombined and destroyed.

The front electrode 50 is formed extending from the top of the antireflection layer 30 to the N-type semiconductor layer 20, and the rear electrode 60 is formed on the lower surface of the P ⁺ -type semiconductor layer 40. .

2A to 2F are views for explaining a method of manufacturing the conventional substrate-type solar cell shown in FIG. 1.

First, as shown in FIG. 2A, after preparing the P-type semiconductor substrate 10a, the upper surface of the P-type semiconductor substrate 10a is etched into an uneven structure.

Next, as shown in FIG. 2B, an N-type semiconductor layer 20a is formed on the P-type semiconductor substrate 10a by doping an N-type dopant on the P-type semiconductor substrate 10a.

In this doping process, in a state in which the P-type semiconductor substrate 10a is placed in a high-temperature diffusion furnace of approximately 800°C or higher, an N-type dopant gas such as POCl ₃ , PH ₃ is supplied to transfer the N-type dopant to the P-type semiconductor substrate ( It consists of a process of diffusion to the surface of 10a).

Meanwhile, since such a high-temperature diffusion process is performed at a high temperature of 800° C. or higher, by-products such as Phosphor-Silicate Glass (PSG) may be formed on the surface of the P-type semiconductor substrate 10a. Since the PSG causes a problem of blocking current in the solar cell, the PSG is removed using an etching solution or the like in order to increase the efficiency of the solar cell.

Next, as can be seen in FIG. 2C, the N-type semiconductor layer 20a formed on the side and lower portions of the P-type semiconductor substrate 10a is removed, and the N-type semiconductor layer ( 20a) is formed. Accordingly, a PN junction layer comprising the P-type semiconductor substrate 10 and the N-type semiconductor layer 20 formed on the upper surface thereof is formed.

Next, as can be seen in FIG. 2D, an anti-reflection layer 30 is formed on the upper surface of the N-type semiconductor layer 20.

Next, as shown in FIG. 2E, a front electrode 50 is formed on the upper surface of the antireflection layer 30, and a rear electrode 60 is formed on the lower surface of the P-type semiconductor substrate 10.

Next, as can be seen in FIG. 2F, a heat treatment process is performed at a high temperature to complete the substrate-type solar cell as shown in FIG. 1. In this way, when a high-temperature heat treatment process is performed, the metal material constituting the front electrode 50 penetrates through the antireflection layer 30 and penetrates to the N-type semiconductor layer 20, so that the front electrode 50 becomes N It is electrically connected to the type semiconductor layer 20. In addition, the metal material constituting the rear electrode 60 penetrates into the P-type semiconductor substrate 10 to form a P ⁺ -type semiconductor layer 40 under the P-type semiconductor substrate 10.

Since the conventional substrate-type solar cell as described above uses the above-described high-temperature diffusion process for the PN bonding process, vacuum and high-temperature equipment are used, so the doping process is complicated and the process time is long, resulting in lower productivity, and a large amount of dopant gas. As it is used, the production cost increases.

The present invention has been made to solve the above-described problems, and it is an object of the present invention to provide a substrate-type solar cell, a method of manufacturing the same, and a doping method and apparatus for a substrate-type solar cell so as to simplify the doping process.

In addition, it is another technical problem to provide a substrate-type solar cell, a method of manufacturing the same, and a doping method and apparatus for a substrate-type solar cell, so as to improve efficiency by minimizing contact resistance between a semiconductor substrate and an electrode of the present invention.

A method of manufacturing a substrate-type solar cell according to the present invention for achieving the above-described technical problem comprises: preparing a semiconductor substrate; Forming a plurality of first doped regions forming a PN junction with a predetermined region of the semiconductor substrate by selectively doping a dopant in a predetermined region of the semiconductor substrate; Forming an antireflection layer on a semiconductor substrate including the plurality of first doped regions; Forming a plurality of front electrodes connected to each of the plurality of first doped regions through the anti-reflection layer; And forming at least one rear electrode connected to the semiconductor substrate.

The forming of the plurality of first doped regions may include selectively forming a dopant material on a predetermined region of the semiconductor substrate; And selectively doping the dopant onto a predetermined region of the semiconductor substrate by selectively spraying plasma onto the dopant material to form the plurality of first doped regions.

The process of selectively forming a dopant material on a predetermined region of the semiconductor substrate may include: disposing a mask having an opening overlapping a predetermined region of the semiconductor substrate on the semiconductor substrate; And coating the dopant material on a predetermined region of the semiconductor substrate overlapping the opening of the mask.

The forming of the plurality of first doped regions may include forming a dopant material on the entire upper surface of the semiconductor substrate; And selectively doping the dopant onto a predetermined region of the semiconductor substrate by selectively spraying plasma onto the dopant material to form the plurality of first doped regions.

The width of each of the plurality of first doped regions may range from 10 μm to 1 mm.

A method of manufacturing a substrate-type solar cell according to the present invention for achieving the above-described technical problem comprises: preparing a semiconductor substrate; Forming a dopant material on the entire upper surface of the semiconductor substrate; Forming a first doped region forming a PN junction with an undoped region of the semiconductor substrate by spraying plasma onto the dopant material and doping the dopant over the entire upper surface of the semiconductor substrate; Forming an anti-reflection layer on the first doped region; Forming a plurality of front electrodes passing through the anti-reflection layer and connected to the first doped region at predetermined intervals; And forming at least one rear electrode connected to the semiconductor substrate.

The plasma may be sprayed in the form of a dot or a line beam.

The manufacturing method of the substrate-type solar cell further includes a process of performing a heat treatment process to penetrate the material of the rear electrode into the lower surface of the semiconductor substrate to form a second doped region, wherein the rear electrode is the second It is connected to the semiconductor substrate through a doped region.

The first doped region may be formed to have a depth ranging from 0.01 μm to 1 mm from the upper surface of the semiconductor substrate. In addition, the dopant material may be formed to a thickness ranging from 0.1 μm to 1 mm.

The doping method of a substrate-type solar cell according to the present invention for achieving the above-described technical problem includes a step (A) of forming a dopant material on an upper surface of a semiconductor substrate; And a plasma doping process of forming a doped region by spraying plasma onto the dopant material and doping the dopant onto the semiconductor substrate.

The dopant material may be formed on the upper surface of the semiconductor substrate to be spaced apart at predetermined intervals, or may be formed on the entire upper surface of the semiconductor substrate. In this case, the dopant material may be formed to a thickness ranging from 0.1 μm to 1 mm.

In the plasma doping process, a plurality of doped regions may be formed by selectively doping the dopant onto a predetermined region of the semiconductor substrate by selectively spraying plasma onto the dopant material.

The plasma doping process may form a doped region by injecting plasma onto the dopant material in the form of a line beam to dope the dopant over the entire area of the semiconductor substrate.

The doped region may be formed to have a depth ranging from 0.01 μm to 1 mm from the upper surface of the semiconductor substrate.

A substrate-type solar cell according to the present invention for achieving the above-described technical problem includes a semiconductor substrate; A plurality of first doped regions selectively doped for each predetermined region of the semiconductor substrate to form a PN junction with the predetermined region of the semiconductor substrate; An antireflection layer formed on a semiconductor substrate including the plurality of first doped regions; A plurality of front electrodes formed on the anti-reflection layer and connected to each of the plurality of first doped regions through the anti-reflection layer; And at least one rear electrode formed on the rear surface of the semiconductor substrate and connected to the semiconductor substrate.

Each of the plurality of first doped regions may be formed to have a depth ranging from 0.01 μm to 1 mm from the upper surface of the semiconductor substrate, and a width of each of the plurality of first doped regions may range from 10 μm to 1 mm.

The upper surface of the semiconductor substrate may be formed of a non-doped region between the plurality of first doped regions and the plurality of first doped regions.

The substrate-type solar cell may further include a second doped region formed on a rear surface of the semiconductor substrate, and the rear electrode may be connected to the semiconductor substrate through the second doped region.

A doping apparatus for a substrate-type solar cell according to the present invention for achieving the above-described technical problem comprises: a substrate support means for supporting a semiconductor substrate on which a dopant material is formed; A plasma doping member configured to selectively form a dopant region in a predetermined region of the semiconductor substrate by spraying plasma onto the dopant material to selectively dope a dopant in a predetermined region of the semiconductor substrate; A gas supply unit supplying an inert gas to the plasma doping member; And a gas supply unit supplying plasma power to the plasma doping member and grounding the substrate transfer unit.

The plasma doping member may include a metal tube for generating plasma having a predetermined diameter according to an inert gas supplied from the gas supply unit and plasma power supplied from the power supply unit to inject the dopant material; And an insulating tube surrounding a lower portion of the metal tube.

The metal tube is formed of a metal material to have a gas supply port through which the inert gas is supplied and a gas discharge port through which the plasma is injected, and includes a body connected to the power supply, and the gas discharge port is relatively Have a small diameter.

A doping apparatus for a substrate-type solar cell according to the present invention for achieving the above-described technical problem comprises: a substrate support means for supporting a semiconductor substrate on which a dopant material is formed; A plasma doping module that injects plasma onto the dopant material through each of a plurality of plasma spray nozzles to dopant on the semiconductor substrate to form a doped region on the semiconductor substrate; A gas supply unit supplying an inert gas to the plasma doping module; And a gas supply unit supplying plasma power to the plasma doping module and grounding the substrate transfer unit.

The plasma doping module may include a plasma electrode frame including the plurality of plasma spray nozzles for generating plasma and spraying the dopant material according to an inert gas supplied from the gas supply unit and plasma power supplied from the power supply unit; An insulating frame formed on the plasma electrode frame and formed to have a plurality of gas supply holes communicating with each of the plurality of plasma spray nozzles; And a gas distribution frame that is supplied with an inert gas supplied from the gas supply unit and has a gas distribution space in common communication with each of the plurality of gas supply holes to cover the insulating frame.

The plasma electrode frame is coupled to a lower portion of the insulating frame to supply plasma power from the power supply, and an electrode plate having a plurality of plasma injection holes communicating with each of the plurality of gas supply holes; The plurality of plasma spray nozzles protruding from the electrode plate to a predetermined height to communicate with each of the plurality of plasma spray holes; And a plurality of insulating tubes surrounding the lower portions of each of the plurality of plasma spray nozzles.

The plasma may be sprayed onto the dopant material to have a diameter in the range of 50 μm to 2 mm.

The plasma may be sprayed in the form of a line beam. In this case, the plasma doping module includes the plurality of plasma spray nozzles that generate the line beam type plasma according to the inert gas supplied from the gas supply unit and the plasma power supplied from the power supply unit to spray the dopant material. A plasma electrode frame; An insulating frame formed on the plasma electrode frame and formed to have a plurality of gas supply slits communicating with each of the plurality of plasma spray nozzles; And a gas distribution frame that is supplied with an inert gas supplied from the gas supply unit and has a gas distribution space in common communication with each of the plurality of gas supply slits to cover the insulating frame.

The plasma electrode frame is coupled to a lower portion of the insulating frame to supply plasma power from the power supply unit, and an electrode plate having a plurality of plasma injection slits communicating with each of the plurality of gas supply slits; The plurality of plasma spray nozzles protruding from the electrode plate to a predetermined height to communicate with each of the plurality of plasma spray slits; And a plurality of insulating tubes surrounding the lower portions of each of the plurality of plasma spray nozzles.

According to the solution to the above problem, in the substrate-type solar cell and the substrate-type solar cell doping apparatus according to the present invention, a first doped region selectively formed for each predetermined region of a semiconductor substrate is selectively PN-bonded with a predetermined region of the semiconductor substrate. By forming the, the contact resistance between the semiconductor substrate and the electrode is minimized, and thus, efficiency may be improved.

In addition, the manufacturing method and doping method of the substrate-type solar cell according to the present invention are formed by forming a first doped region PN-bonded to the semiconductor substrate by spraying plasma on a predetermined region of the dopant material after forming a dopant material on a semiconductor substrate. The doping process for the PN bonding process can be simplified and the process time can be shortened, and the doping depth and concentration can be easily controlled, and further, the contact resistance between the semiconductor substrate and the electrode can be minimized to increase the efficiency of the solar cell. Can be improved.

1 is a schematic cross-sectional view of a conventional substrate-type solar cell.
2A to 2F are views for explaining a method of manufacturing the conventional substrate-type solar cell shown in FIG. 1.
3 is a schematic cross-sectional view of a substrate-type solar cell according to an embodiment of the present invention.
4A to 4H are views for explaining a method of manufacturing the substrate-type solar cell of the present invention shown in FIG. 3.
5A to 5J are views for explaining another method of manufacturing the substrate-type solar cell of the present invention shown in FIG. 3.
6A to 6G are views for explaining another method of manufacturing the substrate-type solar cell of the present invention shown in FIG. 3.
7A to 7G are diagrams for explaining a method of manufacturing a substrate-type solar cell according to another embodiment of the present invention.
8 is a view for explaining another embodiment of the atmospheric pressure plasma doping process shown in FIG. 7C.
9 is a diagram schematically illustrating a doping apparatus for a substrate-type solar cell according to the first embodiment of the present invention.
10 and 11 are diagrams schematically illustrating a doping apparatus for a substrate-type solar cell according to a second embodiment of the present invention.
12 is a view for explaining the arrangement structure of the atmospheric pressure plasma injection member shown in FIG.
13 is a view showing the insulating frame shown in FIG. 11.
14 and 15 are diagrams schematically illustrating a doping apparatus for a substrate-type solar cell according to a third embodiment of the present invention.
16 is a diagram illustrating a plasma electrode frame and a plurality of insulating frames of the atmospheric pressure plasma doping module shown in FIG. 15.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the drawings.

3 is a schematic cross-sectional view of a substrate-type solar cell according to an embodiment of the present invention.

Referring to FIG. 3, a substrate-type solar cell 100 according to an embodiment of the present invention includes a semiconductor substrate 110, a plurality of first doped regions 120, an antireflection layer 130, and a second doped region 140. , A plurality of front electrodes 150, and a rear electrode 160.

The semiconductor substrate 110 may be a silicon substrate having a first polarity (eg, P-type) or a silicon substrate having a second polarity (eg, N-type) opposite to the first polarity.

As the silicon substrate, single crystal silicon or polycrystalline silicon may be used.Since single crystal silicon has a high purity and low crystal defect density, the efficiency of a solar cell is high, but the cost is too high, so economical efficiency is low. It is suitable for mass production because the production cost is low because it uses low-cost materials and processes.

The upper surface of the semiconductor substrate 110 is formed in an uneven structure so that sunlight can be absorbed into the solar cell as much as possible. The uneven structure formed on the upper surface of the semiconductor substrate 110 may be formed by an etching process, for example, reactive ion etching.

Each of the plurality of first doped regions 120 is formed by a first dopant selectively doped for each predetermined region of the semiconductor substrate 110 to form a PN junction with a predetermined region of the semiconductor substrate 100. For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the first dopant may be an N-type dopant containing a P element such as phosphoric acid. As another example, when the semiconductor substrate 110 is made of an N-type semiconductor, the first dopant may be a P-type dopant containing a B element such as boric acid.

Each of the plurality of first doped regions 120 is a coating process of coating a first dopant material on a predetermined region of the semiconductor substrate 110, and plasma is sprayed on the first dopant material in an atmospheric pressure to apply the first dopant to the semiconductor substrate ( It may be formed by an atmospheric pressure plasma doping process in which a predetermined region of 110) is doped to a predetermined depth. Accordingly, the upper surface of the semiconductor substrate 110 is between (or around) the plurality of first doped regions 120 doped with the first dopant and the plurality of first doped regions 120 doped with the first dopant. Consists of undoped regions.

Each of the plurality of first doped regions 120 may be formed with a doping depth ranging from 0.01 μm to 1 mm from the upper surface of the semiconductor substrate 110. In this case, when the doping depth of each of the plurality of first doped regions 120 is 0.01 μm or less, a PN junction between the semiconductor substrate 110 and the first doped region 120 may not be formed. In addition, when the doping depth of each of the plurality of first doped regions 120 is 1 mm or more, the amount of use of the first dopant material increases, thereby increasing the manufacturing cost. Accordingly, each of the plurality of first doped regions 120 is formed with a doping depth in the range of 0.01 μm to 1 mm from the top surface of the semiconductor substrate 110 in consideration of the formation of the PN junction and the use of the first dopant material. desirable.

A width (or size) of each of the plurality of first doped regions 120 may be formed in a range of 10 μm to 1 mm. In this case, when the width of each of the plurality of first doped regions 120 is 10 μm or less, it is difficult to manufacture a plasma spray nozzle that sprays plasma during the atmospheric pressure plasma doping process. In addition, when the width of each of the plurality of first doped regions 120 is 1 mm or more, a large plasma spray nozzle must be used, and a high plasma power must be used for plasma spray.

The antireflection layer 130 is formed on the entire upper surface of the semiconductor substrate 110 including the plurality of first doped regions 120. In this case, the antireflection layer 130 is formed to have an uneven structure corresponding to the uneven structure formed on the upper surface of the semiconductor substrate 110. The antireflection layer 130 may be formed of silicon nitride or silicon oxide. The anti-reflection layer 130 serves to minimize reflection of incident sunlight.

The second doped region 140 is formed by a second dopant doped on the lower surface of the semiconductor substrate 110. That is, the second doped region 140 is formed by penetrating the second dopant included in the rear electrode material forming the rear electrode 160 to a predetermined depth from the lower surface of the semiconductor substrate 110 by a heat treatment process. For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the second doped region 140 is made of a P ⁺ type semiconductor. The second doped region 140 serves to prevent electrons formed by sunlight from being recombined and destroyed.

Each of the plurality of front electrodes 150 is formed on the anti-reflection layer 130 overlapping the plurality of first doped regions 120 and passes through the anti-reflection layer 130 to electrically connect the plurality of first doped regions 120. Connected. That is, each of the plurality of front electrodes 150 is electrically connected to the first doped region 120 by penetrating the front electrode material through the antireflection layer 130 to the first doped region 120 by a heat treatment process. Each of the plurality of front electrodes 150 is Ag, Al, Ag+Al, Ag+Mg, Ag+Mn, Ag+Sb, Ag+Zn, Ag+Mo, Ag+Ni, Ag+Cu, Ag+Al It may be made of a metal material such as +Zn.

The rear electrode 160 is formed on the lower surface of the semiconductor substrate 110 and is electrically connected to the second doped region 140. The rear electrode 160 may include a material capable of functioning as a second dopant for forming the second doped region 140. For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the rear electrode 160 is Al, Al+Ag, Al+Mo, Al+Ni, Al+Cu, Al+Mg, Al+Mn, Al Metal materials such as +Zn may be mentioned. Meanwhile, the above-described rear electrode 160 may be formed in a plurality of patterns on the lower surface of the semiconductor substrate 110 at regular intervals.

As described above, in the substrate-type solar cell according to the embodiment of the present invention, the first doped region 120 selectively formed for each predetermined region of the semiconductor substrate 110 may selectively form a PN junction with a predetermined region of the semiconductor substrate 110. By forming, contact resistance between the semiconductor substrate 110 and the electrode 150 is minimized, and thus, efficiency may be improved.

4A to 4H are views for explaining a method of manufacturing the substrate-type solar cell of the present invention shown in FIG. 3.

First, as shown in FIG. 4A, after preparing the semiconductor substrate 110, the upper surface of the semiconductor substrate 110 is etched to form an uneven structure on the upper surface of the semiconductor substrate 110.

The semiconductor substrate 110 may be a silicon substrate having a first polarity (eg, P-type) or a silicon substrate having a second polarity (eg, N-type) opposite to the first polarity.

The uneven structure on the upper surface of the semiconductor substrate 110 may be formed by a reactive ion etching process. In the case of using the reactive ion etching process, Cl ₂ , SF ₆ , NF ₃ , HBr, or a mixture of two or more thereof is used as the main gas, and Ar, O ₂ , N ₂ , He, or a mixture of two or more thereof is used as the main gas. It can be used as an additive gas.

In this way, when one surface of the semiconductor substrate 110 is etched using a reactive ion etching process, a reaction by-product (not shown) such as SiOx may remain on the upper surface of the semiconductor substrate 110 due to high-pressure plasma. Accordingly, after the reactive ion etching process for forming the uneven structure, a reaction product removal process for removing reaction by-products remaining on the upper surface of the semiconductor substrate 110 may be additionally performed. The reactant removal process uses the reactive ion etching process described above, but a reactive gas that does not contain oxygen may be used.

The above-described process of forming the uneven structure and the process of removing reactants may perform a continuous process within the same equipment, and thus, substantially no process addition or process equipment addition occurs. On the other hand, in the process of forming the above-described uneven structure, when the process conditions are optimized so that the reaction by-product is not generated, the above-described reaction product removal process may be omitted.

Next, as shown in FIG. 4B, a mask 121 having a plurality of openings 121o spaced apart at a predetermined interval is aligned and disposed on the semiconductor substrate 110. In this case, the mask 121 may be made of a metal material or an organic material.

Next, as shown in FIG. 4C, a first dopant material 123 is coated on a predetermined region of the semiconductor substrate 110 overlapping each of the openings 121o of the mask 121. In this case, the first dopant material 123 may be coated by an aerosol coating process or a spin coating process. Meanwhile, after coating the first dopant material 123, a drying process of drying the coated first dopant material 123 may be additionally performed.

The first dopant material 123 is made of an organic (or inorganic) liquid (or powder) material containing a first dopant, for example, a P element such as phosphoric acid or a B element such as boric acid. In this case, it is preferable that the content of the first dopant contained in the first dopant material 123 is in the range of 0.1% to 90%. For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the first dopant material 123 is made of an organic (or inorganic) liquid (or powder) material containing a P element such as phosphoric acid. On the other hand, when the semiconductor substrate 110 is made of an N-type semiconductor, the first dopant material 123 is an organic (or inorganic) liquid (or powder) material containing a first dopant such as a B element such as boric acid. Done.

When the first dopant material 123 is a liquid material, the first dopant material 123 may be coated according to the aforementioned aerosol coating method or spin coating method. On the other hand, when the first dopant material 123 is a powder material, the first dopant material 123 may be coated with an organic solution by spraying.

The first dopant material 123 may be coated to a thickness ranging from 0.1 μm to 1 mm. That is, the coating thickness of the first dopant material 123 penetrates from the top surface of the semiconductor substrate 110 and affects the doping depth of the first dopant. Accordingly, when the first dopant material 123 is formed to have a thickness of 0.1 μm or less, the first dopant may not penetrate into the semiconductor substrate 110 or may have a very shallow penetration depth. In addition, when the first dopant material 123 is formed to have a thickness of 1 mm or more, the amount of use of the first dopant material 123 may increase, thereby increasing manufacturing cost. Accordingly, the coating thickness of the first dopant material 123 may have a thickness in the range of 0.1 μm to 1 mm on the upper surface of the semiconductor substrate 110 in consideration of the penetration depth of the first dopant and the amount of use of the first dopant material. It is preferred to be coated.

Next, as shown in FIG. 4D, by spraying plasma P for each predetermined area of the first dopant material 123 using a plurality of atmospheric pressure plasma spraying members 125 installed at predetermined intervals on the semiconductor substrate 110 The first dopant of the first dopant material 123 penetrates into a predetermined region of the semiconductor substrate 110 to form a plurality of first doped regions 120. That is, the first dopant contained in the first dopant material 123 penetrates the surface of the semiconductor substrate 110 by the heat, ions, and flow rates of the inert gas of the plasma P to be sprayed. It is doped to a predetermined depth in a predetermined area. Accordingly, the first doped region 120 forms a PN junction with a predetermined region of the semiconductor substrate 110.

Each of the plurality of first doped regions 120 may be formed with a doping depth ranging from 0.01 μm to 1 mm from the upper surface of the semiconductor substrate 110. In this case, when the doping depth of each of the plurality of first doped regions 120 is 0.01 μm or less, a PN junction between the semiconductor substrate 110 and the first doped region 120 may not be formed. In addition, when the doping depth of each of the plurality of first doped regions 120 is 1 mm or more, the amount of use of the first dopant material increases, thereby increasing the manufacturing cost. Accordingly, each of the plurality of first doped regions 120 is formed with a doping depth in the range of 0.01 μm to 1 mm from the top surface of the semiconductor substrate 110 in consideration of the formation of the PN junction and the use of the first dopant material. desirable.

The atmospheric pressure plasma spray member 125 sprays plasma P having a predetermined diameter on the first dopant material 123 according to plasma power and an inert gas injected into the thin metal tube. In this case, the inert gas may be Ar, He, H2, N2, and the like, and the plasma power may be a low frequency (LF) power, a middle frequency (MF), or a high frequency (HF) power. For example, LF power may have a frequency ranging from 3 kHz to 300 kHz, MF power may have a frequency ranging from 300 kHz to 3 MHz, and HF power may have a frequency ranging from 3 MHz to 30 MHz.

The atmospheric pressure plasma spray member 125 is preferably spaced apart from the first dopant material 123 coated on the semiconductor substrate 110 by a distance (or interval) in the range of 1 mm to 10 mm.

The plasma P may be sprayed onto the first dopant material 123 to have a diameter in the range of 50 μm to 2 mm. In this case, when the plasma P is sprayed to have a diameter of 50 μm or less, since the length of the plasma P is short, doping of the first dopant material 123 by the plasma P may be insignificant, and the plasma ( When P) is sprayed to have a diameter of 2 mm or more, spreading of the sprayed plasma P may occur.

Next, as shown in FIG. 4E, while removing the mask 121 disposed on the semiconductor substrate 110, the first dopant material 123 remaining in a predetermined region of the semiconductor substrate 110 is removed. Accordingly, between (or around) the plurality of first doped regions 120 and the plurality of first doped regions 120 selectively doped with a first dopant so as to have a predetermined interval on the upper surface of the semiconductor substrate 110 In the undoped region, the first dopant is not doped.

Next, as can be seen in FIG. 4F, an anti-reflection layer 130 is formed on the entire upper surface of the semiconductor substrate 110 including an undoped region between the plurality of first doped regions 120 and the plurality of first doped regions 120. ) Is formed.

The antireflection layer 130 may be formed of silicon nitride or silicon oxide through a plasma chemical vapor deposition process. The antireflection layer 130 is formed to have an uneven structure corresponding to the uneven structure formed on the upper surface of the semiconductor substrate 110.

Next, as shown in FIG. 4G, a front electrode material 150a is formed in a predetermined pattern on the antireflection layer 130 overlapping the plurality of first doped regions 120, and the lower surface of the semiconductor substrate 110 A rear electrode material 160a is formed in the.

After forming the front electrode material 150a first, the rear electrode material 160a may be formed, or after the rear electrode material 160a is formed first, the front electrode material 150a may be formed. have.

The front electrode material 150a is Ag, Al, Ag+Al, Ag+Mg, Ag+Mn, Ag+Sb, Ag+Zn, Ag+Mo, Ag+Ni, Ag+Cu, Ag+Al+Zn, and It can be made of the same metal material.

The rear electrode material 160a may include a material capable of functioning as a second dopant having a polarity opposite to that of the first dopant. For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the rear electrode material 160a is Al, Al+Ag, Al+Mo, Al+Ni, Al+Cu, Al+Mg, Al+Mn, Metal materials such as Al+Zn are mentioned. Meanwhile, the above-described rear electrode material 160a may be formed in a plurality of predetermined patterns on the lower surface of the semiconductor substrate 110 at regular intervals.

The front electrode material 150a and the rear electrode material 160a may be formed by a printing process or a sputtering process using a mask. In this case, the printing process may be screen printing, inkjet printing, gravure printing, microcontact printing, or the like.

Next, as can be seen in FIG. 4H, a heat treatment process is performed to form a plurality of front electrodes 150, a second doped region 140, and a rear electrode 160, thereby completing a substrate-type solar cell.

When the heat treatment process, for example, a heat treatment process at a temperature of 850° C. or higher, the front electrode material 150a penetrates the antireflection layer 130 and penetrates into the plurality of first doped regions 120 A plurality of front electrodes 150 electrically connected to the doped region 120 are formed.

In addition, when the heat treatment process is performed at a temperature of 850° C. or higher, the second dopant included in the rear electrode material 160a penetrates to a predetermined depth from the lower surface of the semiconductor substrate 110 to form the second doped region 130. . For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the second doped region 140 is made of a P ⁺ type semiconductor. Thus, finally, the rear electrode 600 is electrically connected to the semiconductor substrate 110 through the second doped region 130.

Meanwhile, when the rear electrode material 160a is made of a material that cannot function as a second dopant, the second doped region 140 is subjected to a plasma ion doping process using a second dopant-containing gas containing a second dopant. After forming, the rear electrode 160 is formed on the lower surface of the second doped region 140. In this way, when the second doped region 140 is first formed and then the rear electrode 160 is formed, the front electrode 150 is not formed simultaneously with the rear electrode 160, but the rear electrode 1600 It can be formed before or after the formation process of.

As described above, in the method of manufacturing a substrate-type solar cell according to an exemplary embodiment of the present invention, after forming a dopant material on the semiconductor substrate 110, plasma is selectively sprayed onto a predetermined area of the dopant material. By forming a plurality of first doped regions 120 selectively PN-bonded in a predetermined region, the doping process for the PN bonding process can be simplified, the process time can be shortened, and doping of the first doped region 120 The depth and doping concentration can be easily controlled.

In addition, the method of manufacturing a substrate-type solar cell according to an embodiment of the present invention selectively selects the first doped region 120 for selectively forming a PN junction for each predetermined region of the semiconductor substrate 110 using a selective atmospheric pressure plasma doping process. By forming it as, the contact resistance between the semiconductor substrate 110 and the electrode 150 can be minimized, thereby improving the efficiency of the solar cell.

5A to 5J are views for explaining another method of manufacturing the substrate-type solar cell of the present invention shown in FIG. 3.

First, as shown in FIG. 5A, after preparing the semiconductor substrate 110 as in FIG. 4A described above, the upper surface of the semiconductor substrate 110 is etched to form an uneven structure on the upper surface of the semiconductor substrate 110. Since the process of forming the uneven structure is the same as in the above-described embodiment, a repeated description thereof will be omitted.

Next, as shown in FIG. 5B, the semiconductor substrate 110 is preheated to a predetermined temperature by performing a high-temperature heat treatment process or a rapid heat treatment process. At this time, in the preheating process of the semiconductor substrate 110, the temperature of the semiconductor substrate 110 is preheated to a temperature suitable for the above-described atmospheric pressure plasma doping process, so that the doping process penetrates into the surface of the semiconductor substrate 110 during the atmospheric pressure plasma doping process to be described later. It facilitates rearrangement and/or crystal rearrangement of atoms of the dopant and silicon atoms of the semiconductor substrate 110.

Next, as can be seen in FIG. 5C, a mask 121 having a plurality of openings 121o spaced apart at predetermined intervals is aligned and disposed on the heated semiconductor substrate 110.

Next, as shown in FIG. 5D, a first dopant material 123 is coated on a predetermined region of the heated semiconductor substrate 110 overlapping each of the openings 121o of the mask 121. Since the coating process of the first dopant material 123 is the same as in the above-described embodiment, a repeated description thereof will be omitted.

Next, as shown in FIG. 5E, by spraying plasma P for each predetermined region of the first dopant material 123 using a plurality of atmospheric pressure plasma spraying members 125 installed at predetermined intervals on the semiconductor substrate 110 The first dopant of the first dopant material 123 penetrates into a predetermined region of the semiconductor substrate 110 to form a plurality of first doped regions 120. Since the process of forming the first doped region 120 is the same as the above-described embodiment, a repeated description thereof will be omitted.

Next, as shown in FIG. 5F, a first dopant for forming a plurality of first doped regions 120 by performing a high temperature heat treatment process or a rapid heat treatment process after removing the mask 121 disposed on the semiconductor substrate 110 In addition to rearranging the atoms of, the first dopant contained in the first dopant material 123 remaining on the semiconductor substrate 110 is further penetrated into the plurality of first doped regions 120 to do a plurality of first doping. The dopant doping concentration of the region 120 is increased.

Next, as can be seen in FIG. 5G, the first dopant material 123 remaining on the upper surface of the semiconductor substrate 110 is removed.

Next, as can be seen in FIG. 5H, the semiconductor substrate 110 including the undoped regions between the plurality of first doped regions 120 and the plurality of first doped regions 120 as in FIG. 4F described above. An antireflection layer 130 is formed on the entire upper surface.

Next, as can be seen in FIG. 5I, a front electrode material 150a is formed in a predetermined pattern on the antireflection layer 130 overlapping the plurality of first doped regions 120 as in FIG. 4G described above. A rear electrode material 160a is formed on the lower surface of the semiconductor substrate 110.

Next, as can be seen from FIG. 5J, a plurality of front electrodes 150, a second doped region 140, and a rear electrode 160 are formed by performing a heat treatment process as in FIG. 4H. Complete the cell.

6A to 6G are views for explaining another method of manufacturing the substrate-type solar cell of the present invention shown in FIG. 3.

First, as shown in FIG. 6A, after preparing the semiconductor substrate 110 as in FIG. 4A described above, the upper surface of the semiconductor substrate 110 is etched to form an uneven structure on the upper surface of the semiconductor substrate 110.

Next, as shown in FIG. 6B, the first dopant material 123 is coated on the entire upper surface of the semiconductor substrate 110 having an uneven structure on the upper surface. The first dopant material 123 may be coated by an aerosol coating process, a slit coating process, a spin coating process, or a printing process. In this case, the printing process may be screen printing, inkjet printing, gravure printing, microcontact printing, or the like.

Meanwhile, before the coating process of the first dopant material 123, the semiconductor substrate 110 may be heated through a heat treatment process as shown in FIG. 5B. In addition, after coating the first dopant material 123, a drying process of drying the coated first dopant material 123 may be additionally performed.

Next, as shown in FIG. 6C, by spraying plasma P for each predetermined region of the first dopant material 123 using a plurality of atmospheric pressure plasma spraying members 125 installed at predetermined intervals on the semiconductor substrate 110 The first dopant of the first dopant material 123 penetrates into a predetermined region of the semiconductor substrate 110 to form a plurality of first doped regions 120. Since the process of forming the first doped region 120 is the same as that of FIG. 4D, a repeated description thereof will be omitted.

Next, as shown in FIG. 6D, the first dopant material 123 remaining on the semiconductor substrate 110 is removed. Accordingly, between (or around) the plurality of first doped regions 120 and the plurality of first doped regions 120 selectively doped with a first dopant so as to have a predetermined interval on the upper surface of the semiconductor substrate 110 In the undoped region, the first dopant is not doped.

Next, as can be seen in FIG. 6E, as shown in FIG. 4F, the semiconductor substrate 110 including a plurality of first doped regions 120 and an undoped region between the plurality of first doped regions 120 An antireflection layer 130 is formed on the entire upper surface.

Next, as can be seen in FIG. 6F, a front electrode material 150a is formed in a predetermined pattern on the antireflection layer 130 overlapping the plurality of first doped regions 120 as in FIG. 4G described above. A rear electrode material 160a is formed on the lower surface of the semiconductor substrate 110.

Next, as can be seen in FIG. 6G, a plurality of front electrodes 150, second doped regions 140, and rear electrodes 160 are formed by performing a heat treatment process as in FIG. 4H. Complete the cell.

7A to 7G are diagrams for explaining a method of manufacturing a substrate-type solar cell according to another embodiment of the present invention.

First, as shown in FIG. 7A, after preparing the semiconductor substrate 110 as in FIG. 4A described above, the upper surface of the semiconductor substrate 110 is etched to form an uneven structure on the upper surface of the semiconductor substrate 110.

Next, as shown in FIG. 7B, the first dopant material 123 is coated on the entire upper surface of the semiconductor substrate 110 having an uneven structure on the upper surface. The first dopant material 123 may be coated by an aerosol coating process, a slit coating process, a spin coating process, or a printing process. In this case, the printing process may be screen printing, inkjet printing, gravure printing, microcontact printing, or the like.

Meanwhile, before the coating process of the first dopant material 123, the semiconductor substrate 110 may be heated through a heat treatment process as shown in FIG. 5B. In addition, after coating the first dopant material 123, a drying process of drying the coated first dopant material 123 may be additionally performed.

Next, as shown in FIG. 7C, an atmospheric pressure plasma doping module 223 having a plurality of atmospheric pressure plasma spraying members 125 arranged in a zigzag shape to have a predetermined interval is disposed on the semiconductor substrate 110.

Subsequently, the plasma P generated from each of the plurality of atmospheric pressure plasma spray members 125 is sprayed onto the first dopant material 123 in the form of dots having a predetermined distance, thereby discharging the first dopant of the first dopant material 123. A first doped region 220 having a predetermined depth is formed from the upper surface of the semiconductor substrate 110 by penetrating the entire upper surface of the semiconductor substrate 110. That is, the first dopant contained in the first dopant material 123 is generated by the heat of the plasma P sprayed from each of the plurality of atmospheric pressure plasma spraying members 125, ions, and flow rates of the inert gas. Penetrates the entire surface of the semiconductor substrate 110 and is doped to a predetermined depth over the entire upper surface of the semiconductor substrate 110. Accordingly, the first doped region 220 forms a PN junction with the semiconductor substrate 110. Since the method of spraying the plasma P from each of the plurality of atmospheric pressure plasma spraying members 125 is the same as that of FIG. 4D, a repeated description thereof will be omitted.

Next, as shown in FIG. 7D, the first dopant material 123 remaining on the semiconductor substrate 110 is removed.

Next, as can be seen in FIG. 7E, an anti-reflection layer 130 is formed on the first doped region 220 as in FIG. 4F described above.

The antireflection layer 130 may be formed of silicon nitride or silicon oxide through a plasma chemical vapor deposition process. The antireflection layer 130 is formed to have an uneven structure corresponding to the uneven structure formed on the upper surface of the semiconductor substrate 110.

Next, as shown in FIG. 7F, a front electrode material 250a is formed in a predetermined pattern on the antireflection layer 130 overlapping each predetermined region of the first doped region 220, and the semiconductor substrate 110 A rear electrode material 160a is formed on the lower surface. The forming process of each of the front electrode material 250a and the rear electrode material 160a may be formed by a printing process or a sputtering process using a mask in the same manner as the manufacturing method of the substrate-type solar cell shown in FIG. 4G. .

Next, as can be seen from FIG. 7G, a plurality of front electrodes 250, a second doped region 140, and a rear electrode 160 are formed by performing a heat treatment process as in FIG. 4H. Complete the cell.

Meanwhile, in the atmospheric pressure plasma doping process of FIG. 7C described above, the atmospheric pressure plasma doping module 223 first uses a plurality of atmospheric pressure plasma spray members 125 disposed in a zigzag shape to have a predetermined interval. Although it has been described as spraying in the form of dots on the dopant material 123, the present invention is not limited thereto, and as shown in FIG. 8, the atmospheric pressure plasma doping module 223 uses a line beam type plasma You can also spray. To this end, the atmospheric pressure plasma doping module 223 may be configured to include at least one atmospheric pressure plasma spray member 125 having a plasma spray slit having a predetermined length for spraying the plasma LBP in the form of a line beam. have. In this case, since the plasma LBP is sprayed in the form of a line beam, the dopant may penetrate the entire surface of the semiconductor substrate 110 at a uniform depth (or concentration).

9 is a diagram schematically illustrating a doping apparatus for a substrate-type solar cell according to the first embodiment of the present invention.

Referring to FIG. 9, the doping apparatus 300 for a substrate-type solar cell according to the first embodiment of the present invention includes a substrate support means 310, an atmospheric pressure plasma doping member 320, a gas supply unit 330, and a power supply unit. It is composed of 340.

The substrate support means 310 supports the semiconductor substrate 110 on which the dopant material 123 is formed, and transfers the supported semiconductor substrate 110 in a predetermined direction. The substrate support means 310 is electrically connected to the power supply unit 340 and maintains an electrically grounded state.

The dopant material 123 is made of a dopant, for example, an organic (or inorganic) liquid (or powder) material containing a P element such as phosphoric acid or a B element such as boric acid. In this case, the content of the dopant contained in the dopant material 123 is preferably in the range of 0.1% to 90%. For example, when the semiconductor substrate 110 is made of a P-type semiconductor, the dopant material 123 is made of an organic (or inorganic) liquid (or powder) material containing a P element such as phosphoric acid. On the other hand, when the semiconductor substrate 110 is made of an N-type semiconductor, the dopant material 123 is made of an organic (or inorganic) liquid (or powder) material containing a dopant such as a B element such as boric acid.

When the dopant material 123 is a liquid material, the dopant material 123 may be coated according to an aerosol coating method or a spin coating method. On the other hand, when the dopant material 123 is a powder material, the dopant material 123 may be coated with an organic solution by spraying.

The dopant material 123 may be coated to a thickness ranging from 0.1 μm to 1 mm. That is, the coating thickness of the dopant material 123 penetrates from the upper surface of the semiconductor substrate 110 and affects the doping depth of the dopant described above. Accordingly, when the dopant material 123 is formed to have a thickness of 0.1 μm or less, the dopant may not penetrate into the semiconductor substrate 110 or the penetration depth may be very shallow. In addition, when the dopant material 123 is formed to have a thickness of 1 mm or more, the amount of use of the dopant material 123 may increase, resulting in an increase in manufacturing cost. Accordingly, it is preferable that the coating thickness of the dopant material 123 is coated to have a thickness in the range of 0.1 μm to 1 mm on the upper surface of the semiconductor substrate 110 in consideration of the penetration depth of the dopant and the amount of the dopant material used.

The atmospheric pressure plasma doping member 320 generates plasma P having a predetermined diameter according to the inert gas supplied from the gas supply unit 330 and the plasma power supplied from the power supply unit 340 to determine the dopant material 123 Spray on the area. To this end, the atmospheric pressure plasma spray member 125 includes a metal tube 322 and an insulating tube 324.

The metal tube 322 is formed of a highly conductive metal material, and includes a body having a predetermined diameter, a gas supply port provided on the upper part of the body, and a gas discharge port provided on the lower part of the body.

One side of the body is electrically connected to the power supply unit 340 through a power supply cable 342. The gas supply port is communicated with the gas supply pipe 332, and the gas discharge port is inserted into the insulating pipe 324.

Meanwhile, in order to prevent reverse flow of the inert gas supplied from the gas supply unit 330 to the metal pipe 322 according to the Bernoulli theorem or the Venturi effect, and to increase the flow rate of the inert gas, the diameter of the gas outlet is gas supply It is formed to have a relatively small diameter compared to the sphere.

The metal tube 322 forms plasma P according to plasma power supplied to the body and inert gas supplied to the gas supply port, and sprays it onto the semiconductor substrate 110 through the gas outlet. In this case, the plasma P may be sprayed onto the dopant material 123 to have a diameter in the range of 50 μm to 2 mm. In this case, when the plasma P is sprayed to have a diameter of 50 μm or less, since the length of the plasma P is short, doping of the dopant material 123 by the plasma P may be insignificant, and the plasma P When is sprayed to have a diameter of 2 mm or more, spreading of the sprayed plasma P may occur.

The insulating pipe 324 is formed to surround the lower portion of the metal pipe 322 and the gas outlet. The insulating tube 324 is made of a ceramic material. The insulating pipe 324 also serves to maintain a constant flow velocity of the plasma P injected from the gas outlet of the metal pipe 324. In addition, the insulating tube 324 electrically insulates the metal tube 322 and prevents the metal tube 322 and the semiconductor substrate 110 from being energized, thereby preventing arcing between the metal tube 322 and the semiconductor substrate 110. prevent. To this end, the insulating tube 324 is preferably separated from the dopant material 123 coated on the semiconductor substrate 110 by a distance (or spacing) (d) in the range of 0.1 mm to 10 mm, but supplied to the metal tube 322 It may be changed according to the flow rate of the inert gas and/or the size of the plasma power source.

The gas supply unit 330 is connected to the metal pipe 322 of the atmospheric pressure plasma doping member 320 through the gas supply pipe 332. The gas supply unit 330 supplies an inert gas such as Ar, He, H2, and N2 to the gas supply port of the metal tube 322 according to an atmospheric pressure plasma doping process.

Meanwhile, the gas supply unit 330 may be configured to include a heating member 334 that heats the inert gas flowing through the gas supply pipe 332.

The heating member 334 is formed to surround the gas supply pipe 332 and heats the inert gas flowing through the gas supply pipe 332 to a temperature suitable for the atmospheric pressure plasma doping process.

The power supply unit 340 is electrically connected to the metal tube 322 of the atmospheric pressure plasma doping member 320 through a power supply cable 342. In addition, the power supply unit 340 is electrically connected to the substrate supporting means 310 to electrically ground the substrate supporting means 310. The power supply unit 340 generates plasma power according to an atmospheric pressure plasma doping process and supplies it to the body of the metal tube 322.

The plasma power may be a low frequency (LF) power, a middle frequency (MF), or a high frequency (HF) power. For example, LF power may have a frequency ranging from 3 kHz to 300 kHz, MF power may have a frequency ranging from 300 kHz to 3 MHz, and HF power may have a frequency ranging from 3 MHz to 30 MHz.

A method of doping a substrate-type solar cell using the doping apparatus 300 for a substrate-type solar cell according to the first embodiment of the present invention will be described as follows.

First, a semiconductor substrate 110 coated with a dopant material 123 having a predetermined thickness is loaded onto the substrate supporting means 310.

Then, while transferring the substrate supporting means 310 loaded with the semiconductor substrate 110 in a predetermined direction, the plasma P is sprayed onto a predetermined area of the dopant material 123 using the atmospheric pressure plasma doping member 320. That is, by supplying an inert gas and plasma power to the metal tube 322 of the atmospheric plasma doping member 320, plasma P generated inside the metal tube 322 by the inert gas and plasma power is determined by the dopant material 123. Spray on the area. Accordingly, the plasma P penetrates the dopant contained in the dopant material 123 from the surface of the semiconductor substrate 110 to a predetermined depth, thereby forming a doped region doped into a predetermined region of the semiconductor substrate 110 by the dopant. Form 120. Accordingly, a PN junction is formed with the predetermined doped region 120 and a predetermined region of the semiconductor substrate 110 adjacent thereto. That is, the predetermined doped region 120 forms a PN junction with the undoped region of the semiconductor substrate 110 to which the dopant is not doped.

Meanwhile, in the doping apparatus 300 for a substrate-type solar cell according to the first embodiment of the present invention, it has been described that the substrate support means 310 is transferred in a predetermined direction, but the present invention is not limited thereto, and the atmospheric pressure plasma doping member 320 is used. It can also be transferred in a predetermined direction.

As described above, the doping apparatus 300 for a substrate-type solar cell according to the first embodiment of the present invention uses the atmospheric pressure plasma doping member 320 that sprays plasma P to form a predetermined region of the semiconductor substrate 110 and PN. By selectively forming the first doped region 120 forming the junction, contact resistance between the semiconductor substrate 110 and the electrode 150 may be minimized, thereby improving the efficiency of the solar cell.

10 and 11 are views schematically showing a doping apparatus for a substrate-type solar cell according to a second embodiment of the present invention, and FIG. 12 is a view for explaining an arrangement structure of the atmospheric pressure plasma spray member shown in FIG. , FIG. 13 is a diagram illustrating the insulating frame shown in FIG. 11.

10 to 13, the substrate-type solar cell doping apparatus 400 according to the second embodiment of the present invention includes a substrate support means 410, an atmospheric pressure plasma doping module 420, a gas supply unit 430, And a power supply unit 440.

The substrate support means 410 supports the semiconductor substrate 110 on which the dopant material 123 is formed, and transfers the supported semiconductor substrate 110 in a predetermined direction. The substrate supporting means 410 is electrically connected to the power supply unit 440 and electrically grounded.

A dopant material 123 is coated on the semiconductor substrate 110 to a predetermined thickness. Since the dopant material 123 is the same as the doping device of the above-described substrate-type solar cell, a repeated description thereof will be omitted.

The atmospheric pressure plasma doping module 420 generates a plasma P having a predetermined diameter according to the inert gas supplied from the gas supply unit 430 and the plasma power supplied from the power supply unit 440 to form the dopant material 123. Spray it in the form of dots with regular intervals. To this end, the atmospheric pressure plasma doping module 420 includes a plasma electrode frame 422, a plurality of insulating frames 424, and a gas distribution frame 426.

The plasma electrode frame 422 includes an electrode plate 422a, a plurality of plasma spray nozzles 422b, and a plurality of insulation tubes 422c.

The electrode plate 422a is formed in a flat plate shape and is electrically connected to the power supply unit 440 through a power supply cable 442 to receive plasma power from the power supply unit 440.

Each of the plurality of plasma spray nozzles 422b protrudes from the lower surface of the electrode plate 422a to a predetermined height so as to have a plasma spray hole 422h having a predetermined diameter penetrating through the electrode plate 422a. Each of the plurality of plasma injection nozzles 422b communicates with the gas distribution frame 426 through the insulating frame 424 to receive an inert gas from the gas distribution frame 426. Each of the plurality of plasma spray nozzles 422b generates plasma P according to plasma power supplied to the electrode plate 422a and inert gas supplied through the insulating frame 424 and sprays it onto the dopant material 123 do.

Each of the plurality of insulating pipes 422c is installed to surround each of the plurality of plasma spray nozzles 422b so that each of the plurality of plasma spray nozzles 422b is not exposed to the outside. Each of the plurality of insulating tubes 422c is made of a ceramic material. Each of the plurality of insulating tubes 422c also serves to maintain a constant flow velocity of the plasma P sprayed from the plurality of plasma spray nozzles 422b. In addition, each of the plurality of insulation pipes 422c electrically insulates each of the plurality of plasma spray nozzles 422b and prevents the current of the plurality of plasma spray nozzles 422b and the semiconductor substrate 110 from being energized. Arcing between each of the spray nozzles 422b and the semiconductor substrate 110 is prevented. To this end, each of the plurality of insulating tubes 422c is preferably separated from the dopant material 123 coated on the semiconductor substrate 110 by a distance (or spacing) d in the range of 0.1 mm to 10 mm, but a plurality of plasmas It may be changed according to the flow rate of the inert gas supplied to each of the injection nozzles 422b and/or the size of plasma power.

Each of the plurality of insulating frames 424 is installed at regular intervals on the plasma electrode frame 422 so as to overlap the plurality of plasma spray nozzles 422b arranged in the column direction or the row direction, and distributed by the gas distribution frame 426 The resulting inert gas is supplied to the plasma injection holes 422h of each of the plurality of plasma injection nozzles 422b. To this end, each of the plurality of insulating frames 424 is configured to include a plurality of gas supply holes 424h formed at regular intervals so as to overlap each of the plurality of plasma spray nozzles 422b. Each of the plurality of insulating frames 424 may be made of a ceramic material.

The gas supply holes 424h of each of the plurality of insulating frames 424 are formed to have a relatively larger diameter than the plasma injection hole 422h of the plasma injection nozzle 422b. Accordingly, the flow velocity of the plasma P injected from each of the plurality of plasma injection nozzles 422b is increased according to the Bernoulli theorem or the Venturi effect.

Each of the above-described plurality of insulating frames 424 may be formed as one body to have a plurality of gas supply holes 424h formed at regular intervals so as to overlap each of the plurality of plasma spray nozzles 422b.

The gas distribution frame 426 is installed on each of the plurality of insulating frames 424 to cover each of the plurality of insulating frames 424. The gas distribution frame 426 is formed to have a gas distribution space 426s in common communication with each of the plurality of gas supply holes 424h formed in each of the plurality of insulating frames 424. Inert gas is supplied from the gas supply unit 430 through a gas supply pipe 432 to the gas distribution space 426s.

The gas distribution frame 426 may be configured to further include a gas distribution member 426a installed in the gas distribution space 426s. The gas distribution member 426a uniformly distributes the inert gas supplied to the gas distribution space 426s and supplies it to each of the plurality of gas supply holes 424h formed in each of the plurality of insulating frames 424, thereby providing a plurality of inert gases. It is uniformly supplied to each of the plasma spray nozzles 422b.

The gas supply unit 430 is connected to the gas distribution frame 426 of the atmospheric pressure plasma doping module 420 through a gas supply pipe 432. The gas supply unit 430 supplies inert gases such as Ar, He, H2, and N2 to the gas distribution frame 426 according to an atmospheric pressure plasma doping process.

Meanwhile, the gas supply unit 430 may be configured to include a heating member 434 that heats the inert gas flowing through the gas supply pipe 432. The heating member 434 is formed to surround the gas supply pipe 432 and heats the inert gas flowing through the gas supply pipe 432 to a temperature suitable for an atmospheric pressure plasma doping process.

The power supply unit 440 is electrically connected to the plasma electrode frame 422 of the atmospheric pressure plasma doping module 420 through a power supply cable 442. In addition, the power supply unit 440 is electrically connected to the substrate support means 410 to electrically ground the substrate support means 410. The power supply unit 440 generates plasma power of the aforementioned LF power, MF power, or HF power according to the atmospheric pressure plasma doping process and supplies it to the electrode plate 422a of the plasma electrode frame 422.

A method of doping a substrate-type solar cell using the doping device 400 for a substrate-type solar cell according to the second embodiment of the present invention will be described as follows.

First, a semiconductor substrate 110 coated with a dopant material 123 having a predetermined thickness is loaded onto the substrate supporting means 410.

Then, while transferring the substrate supporting means 410 loaded with the semiconductor substrate 110 in a predetermined direction, plasma P generated from each plasma spray nozzle 422b of the atmospheric pressure plasma doping module 420 is transferred to a dopant material ( 123) in the form of dots with regular intervals. That is, by supplying an inert gas and plasma power to the atmospheric pressure plasma doping module 420, plasma P generated from each of the plurality of plasma spray nozzles 422b by the inert gas and plasma power is constant on the dopant material 123. Spray at intervals. Accordingly, the plasma P penetrates the dopant contained in the dopant material 123 to a predetermined depth over the entire surface of the semiconductor substrate 110 to a predetermined depth over the entire area of the semiconductor substrate 110 by the dopant. A doped region 220 doped with is formed. Accordingly, the doped region 220 forms a PN junction with the semiconductor substrate 110 adjacent thereto. That is, the doped region 220 forms a PN junction with the undoped region of the semiconductor substrate 110 to which the dopant is not doped.

Meanwhile, in the doping apparatus 400 for a substrate-type solar cell according to the second embodiment of the present invention, it has been described that the substrate support means 410 is transferred in a predetermined direction, but the present invention is not limited thereto, and the atmospheric pressure plasma doping module 420 is used. It can also be transferred in a predetermined direction.

As described above, in the doping apparatus 400 for a substrate-type solar cell according to the second embodiment of the present invention, plasma P generated from each plasma spray nozzle 422b of the atmospheric pressure plasma doping module 420 is used as a dopant material 123 ) By spraying at regular intervals to form a doping layer having a predetermined depth on the surface of the semiconductor substrate 110, the doping process for the PN bonding process can be simplified, the process time can be shortened, and the doped region 220 It is possible to easily control the doping depth and doping concentration.

14 and 15 are views schematically showing a doping apparatus for a substrate-type solar cell according to a third embodiment of the present invention, and FIG. 16 is a plasma electrode frame and a plurality of insulating frames of the atmospheric pressure plasma doping module shown in FIG. It is a figure for explaining.

14 to 15, the substrate-type solar cell doping apparatus 500 according to the third embodiment of the present invention includes a substrate support means 410, an atmospheric pressure plasma doping module 520, a gas supply unit 430, And a power supply unit 440. In the substrate-type solar cell doping device 500 having such a configuration, the remaining configurations except for the atmospheric pressure plasma doping module 520 are the same as the above-described doping device 400 for the substrate-type solar cell, so that the same configurations are repeatedly described. Is omitted.

The atmospheric pressure plasma doping module 520 generates plasma P in the form of a line beam according to inert gas supplied from the gas supply unit 430 and plasma power supplied from the power supply unit 440 to generate a dopant material 123 ) At regular intervals. To this end, the atmospheric pressure plasma doping module 520 includes a plasma electrode frame 522, a plurality of insulating frames 524, and a gas distribution frame 526.

The plasma electrode frame 522 includes an electrode plate 522a, a plurality of plasma spray nozzles 522b, and a plurality of insulating tubes 522c.

The electrode plate 522a is formed in a flat plate shape and is electrically connected to the power supply unit 440 through the power supply cable 442 to receive plasma power from the power supply unit 440.

Each of the plurality of plasma spray nozzles 522b protrudes from the lower surface of the electrode plate 522a to a predetermined height to include a plasma spray slit 522s having a predetermined width and length penetrating the electrode plate 422a. . Each of the plurality of plasma injection nozzles 522b communicates with the gas distribution frame 526 through the insulating frame 524 to receive an inert gas from the gas distribution frame 526. Each of the plurality of plasma spray nozzles 522b generates a line beam type plasma LBP according to plasma power supplied to the electrode plate 522a and an inert gas supplied through the insulating frame 524 to generate a dopant material 123 ) Spray on.

Each of the plurality of insulating tubes 522c is installed to surround each of the plurality of plasma spray nozzles 522b so that each of the plurality of plasma spray nozzles 522b is not exposed to the outside. Each of the plurality of insulating pipes 522c is the same as the insulating pipe 422c of the doping device 400 of the substrate-type solar cell described above, and thus a repeated description thereof will be omitted.

Each of the plurality of insulating frames 524 is installed on the plasma electrode frame 522 at regular intervals so as to overlap the plurality of plasma spray nozzles 522b to spray a plurality of plasmas with inert gas distributed by the gas distribution frame 526 It is supplied to the plasma injection slit 522s of each of the nozzles 522b. To this end, each of the plurality of insulating frames 524 includes a plurality of gas supply slits 524s formed at regular intervals so as to overlap each of the plurality of plasma spray nozzles 522b. Each of the plurality of insulating frames 524 may be made of a ceramic material.

The gas supply slit 524h of each of the plurality of insulating frames 524 is formed to have a relatively larger width than the plasma spray slit 522s of the plasma spray nozzle 522b. Accordingly, the flow velocity of the plasma LBP in the form of a line beam sprayed from each of the plurality of plasma spray nozzles 522b is increased according to Bernoulli's theorem or the Venturi effect.

Each of the above-described plurality of insulating frames 524 may be formed as one body to have a plurality of gas supply slits 524s formed at regular intervals so as to overlap each of the plurality of plasma spray nozzles 522b.

The gas distribution frame 526 is installed on each of the plurality of insulating frames 524 to cover each of the plurality of insulating frames 524. The gas distribution frame 526 is formed to have a gas distribution space 526s in common communication with each of the plurality of gas supply slits 524s formed in each of the plurality of insulating frames 524. Inert gas is supplied from the gas supply unit 430 through a gas supply pipe 432 to the gas distribution space 526s.

The gas distribution frame 526 may further include a gas distribution member 526a installed in the gas distribution space 526s. The gas distribution member 526a uniformly distributes the inert gas supplied to the gas distribution space 526s and supplies the inert gas to each of the plurality of gas supply slits 524s formed in each of the plurality of insulating frames 524. It is uniformly supplied to each of the plasma spray nozzles 522b of.

The doping method of a substrate-type solar cell using the substrate-type solar cell doping apparatus 500 according to the third embodiment of the present invention is plasma generated from each plasma spray nozzle 522b of the atmospheric pressure plasma doping module 520. Except for spraying (LBP) in the form of a line beam, the doping method of the substrate-type solar cell using the above-described doping device 400 for the substrate-type solar cell is performed in the same manner.

Meanwhile, in the doping apparatus 400 for a substrate-type solar cell according to the second embodiment of the present invention, it has been described that the substrate support means 410 is transferred in a predetermined direction, but the present invention is not limited thereto, and the atmospheric pressure plasma doping module 520 is used. It can also be transferred in a predetermined direction.

As described above, the doping apparatus 500 for a substrate-type solar cell according to the third embodiment of the present invention uses plasma LBP in the form of a line beam generated from each plasma spray nozzle 522b of the atmospheric pressure plasma doping module 520. By spraying on the dopant material 123 at regular intervals to uniformly form a doping layer having a predetermined depth on the surface of the semiconductor substrate 110, the doping process for the PN bonding process can be simplified, and the process time can be shortened. , Doping depth and doping concentration of the doped region 220 can be easily controlled.

Those skilled in the art to which the present invention pertains will appreciate that the present invention can be implemented in other specific forms without changing the technical spirit or essential features thereof. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not limiting. The scope of the present invention is indicated by the claims to be described later rather than the detailed description, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention. do.

110: semiconductor substrate 120: first doped region
121: mask 123: dopant material
125: atmospheric pressure plasma spray member 130: antireflection layer
140: second doped region 150: front electrode
150a: front electrode material 160: rear electrode
160a: back electrode material P: plasma

Claims (10)

A substrate support means for supporting a semiconductor substrate on which a dopant material is formed;
A plasma doping member selectively forming a doped region in a predetermined region of the semiconductor substrate by spraying plasma onto the dopant material to selectively dopant to a predetermined region of the semiconductor substrate;
A gas supply unit supplying an inert gas to the plasma doping member; And
And a power supply for supplying plasma power to the plasma doping member and grounding the substrate support means,
The plasma doping member includes a metal tube for generating plasma having a predetermined diameter according to an inert gas supplied from the gas supply unit and plasma power supplied from the power supply unit, and an insulating tube surrounding a lower portion of the metal tube,
The metal tube has a gas outlet through which the plasma is injected, and the insulating tube surrounds the gas outlet and protrudes from the gas outlet. delete The method of claim 1,
The metal tube is formed of a metal material to have a gas supply port through which the inert gas is supplied and a gas discharge port through which the plasma is injected, and includes a body connected to the power supply unit,
The gas outlet port is a substrate type solar cell doping apparatus, characterized in that having a relatively smaller diameter than the gas supply port. A substrate support means for supporting a semiconductor substrate on which a dopant material is formed;
A plasma doping module that injects plasma onto the dopant material through each of a plurality of plasma spray nozzles to dopant dopant on the semiconductor substrate to form a doped region on the semiconductor substrate;
A gas supply unit supplying an inert gas to the plasma doping module; And
And a power supply for supplying plasma power to the plasma doping module and grounding the substrate support means,
The plasma doping module includes a plasma electrode frame including the plurality of plasma spray nozzles for spraying the dopant material by generating plasma according to an inert gas supplied from the gas supply unit and plasma power supplied from the power supply unit,
The plasma electrode frame,
An electrode plate supplied with plasma power from the power supply and having a plurality of plasma injection holes;
The plurality of plasma spray nozzles protruding from the electrode plate to a predetermined height; And
It is configured to include a plurality of insulating pipes surrounding the lower portion of each of the plurality of plasma spray nozzles,
The plurality of insulating tubes protrude from the lower portions of the plurality of plasma spray nozzles, wherein the doping apparatus for a substrate type solar cell. The method of claim 4,
The plasma doping module,
An insulating frame formed on the plasma electrode frame and formed to have a plurality of gas supply holes communicating with each of the plurality of plasma spray nozzles; And
The inert gas supplied from the gas supply unit is supplied, and a gas distribution frame is formed to have a gas distribution space in common communication with each of the plurality of gas supply holes to cover the insulating frame. Substrate type solar cell doping device. The method of claim 5,
The electrode plate is coupled to the lower portion of the insulating frame, the plurality of plasma injection holes communicate with each of the plurality of gas supply holes,
The plurality of plasma injection nozzles are connected to each of the plurality of plasma injection holes, characterized in that the substrate-type solar cell doping apparatus. The method according to any one of claims 1 or 3 to 6,
The plasma is sprayed onto the dopant material to have a diameter ranging from 50 μm to 2 mm. The method of claim 4,
The plurality of plasma spray nozzles are provided to generate and spray plasma in the form of a line beam. The method of claim 8,
The plasma doping module,
An insulating frame formed on the plasma electrode frame and formed to have a plurality of gas supply slits communicating with each of the plurality of plasma spray nozzles; And
The inert gas supplied from the gas supply unit is supplied, and the gas distribution frame is formed to have a gas distribution space in common communication with each of the plurality of gas supply slits to cover the insulating frame. Substrate type solar cell doping device. The method of claim 9,
The electrode plate is coupled to the lower portion of the insulating frame, the plurality of plasma injection slits communicate with each of the plurality of gas supply slits,
The plurality of plasma spray nozzles communicate with each of the plurality of plasma spray slits.

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