KR102154475B1 - Dual chamber apparatus for semiconductor device - Google Patents

Abstract

Disclosed is a dual chamber apparatus for a semiconductor device. The dual chamber apparatus for the semiconductor device includes: an upper chamber having one side formed with a first entrance and having a first inner space; a lower chamber positioned below a first process chamber, having one side formed with a second entrance, and having a second inner space; an upper door positioned on one surface of the upper chamber formed with the first entrance; an upper door driving unit for opening and closing the first entrance by raising and lowering the upper door in a vertical direction; a lower door positioned on one surface of the lower chamber formed with the second entrance; a lower door driving unit for opening and closing the second entrance by raising and lowering the lower door in the vertical direction; magazines positioned in each of the first inner space and the second inner space to load objects to be processed; a wind direction generator positioned in each of the first inner space and the second inner space to create an air stream; and a heater positioned in each of the first inner space and the second inner space to heat the air stream, wherein the upper chamber and the lower chamber have a hexahedral shape.

Description

Dual chamber apparatus for semiconductor components TECHNICAL FIELD

The present invention relates to a dual chamber device for a semiconductor component, and more particularly, to a dual chamber device for a semiconductor component in which an upper chamber and a lower chamber are stacked.

In general, a heat treatment apparatus for a semiconductor component is an equipment for heat treatment such as Rapid Thermal Anealing, Rapid Thermal Cleaning, and Rapid Thermal Chemical Vapor Deposition. [0003] An apparatus for performing a heat treatment process of a semiconductor component is configured to be disposed inside a process chamber while the semiconductor component is accommodated in a magazine, and to apply heat together with pressure to the semiconductor component. [0004] The process chamber as described above is preferably configured to increase and decrease the temperature inside the chamber within a short time as possible, and it is a very important problem that the temperature is controlled so that the temperature of each part inside the process chamber is uniformly increased. .

In addition, due to the characteristics of semiconductor components, the interior of the chamber must be maintained in a clean state, and the temperature inside the chamber must be rapidly lowered in order to improve the production yield after processing. In addition, in the process of increasing the temperature and pressure inside the process chamber, the chamber itself should not be easily deformed, and it is preferable that the process chamber itself is configured to be compact.

It is an object of the present invention to provide a dual chamber device for semiconductor components that is configured so as not to be easily deformed even in a high pressure state.

Another object of the present invention is to provide a dual-chamber device for a semiconductor component that can be installed compactly in a space-efficient manner while improving the processing yield.

Another object of the present invention is to provide a dual-chamber device for a semiconductor component that can maintain the interior of the chamber in a clean state, and is configured to rapidly lower the temperature inside the chamber after performing a process.

The dual-chamber device for a semiconductor component according to the present invention includes an upper chamber having a first inlet and a first inner space; A lower chamber positioned below the first process chamber, having a second inlet formed on one surface thereof, and having a second inner space; An upper door positioned on one surface of the upper chamber in which the first entrance is formed; An upper door driving unit for opening and closing the first entrance by raising and lowering the upper door; A lower door positioned on one surface of the lower chamber in which the second entrance is formed; A lower door driving unit for opening and closing the second entrance by raising and lowering the lower door in a vertical direction; A magazine located in each of the first inner space and the second inner space and for loading objects to be processed; A wind direction generator positioned in each of the first inner space and the second inner space and generating an air flow; And a heater positioned in each of the first inner space and the second inner space, and heating the air flow, wherein the upper chamber and the lower chamber have a hexahedral shape.

In addition, the upper door driving unit may include a pair of driving guide rails arranged parallel to each other; A plurality of rollers provided along a length direction of the driving guide rail and rolling along a surface of the driving guide rail; And a roller support portion that supports the rollers so as to be rotatable and is fixedly coupled to the upper door.

In addition, each of the driving guide rails has a first surface, a second surface disposed perpendicular to the first surface, and a third surface disposed parallel to the second surface, and each of the first to third surfaces A plurality of inner curved surfaces are formed to be spaced apart from each other along the longitudinal direction of the driving guide rail, and the rollers individually contact the curved surfaces formed on the first surface, and a plurality of rollers rolled along the first surface. 1 rollers; A plurality of second rollers individually contacting the curved surfaces formed on the second surface and rolling along the second surface; And a plurality of third rollers that individually contact curved surfaces formed on the third surface and roll along the third surface.

In addition, the curved surface of the first surface, the curved surface of the second surface, and the curved surface of the third surface may be respectively positioned at the same height.

In addition, a first sealing member provided along the periphery of the open surface of the upper chamber and sealing between the open surface of the upper chamber and the upper door; And a second sealing member provided along the periphery of the open surface of the upper chamber in a parallel path with the first sealing member and sealing between the open surface of the upper chamber and the upper door.

In addition, a first receiving groove and a second receiving groove are formed in parallel paths along the periphery of the open surface of the upper chamber, and the first sealing member has a ring shape made of an elastic material, and in the first receiving groove. And a first O-ring inserted and fixed, wherein the second sealing member comprises: a second O-ring positioned in the second receiving groove in a ring shape made of an elastic material; And a gas supply line for supplying gas into the second receiving groove so that the second O-ring selectively contacts the door.

According to the present invention, it is possible to prevent the chamber from being easily deformed even under high pressure conditions.

In addition, the chamber can be space-efficiently and compactly installed while improving the processing yield of semiconductor components.

In addition, while maintaining the inside of the chamber in a clean state, the temperature inside the chamber can be quickly lowered after the process is performed.

1 is a perspective view showing a dual chamber device for a semiconductor component according to a first embodiment of the present invention.
2 is a view showing a cross-section of the upper chamber unit of FIG. 1.
3 is a plan view illustrating the upper chamber unit of FIG. 2.
4 is a cross-sectional view showing an upper chamber unit according to an embodiment of the present invention.
5 is a cross-sectional view illustrating the upper door driving unit of FIG. 4.
6 is a view showing a driving guide rail and rollers along the YZ plane.
7 is a view showing the driving guide rail and rollers along the XZ plane.
8 is a diagram showing a drive guide rail and a roller in a pressing process.
9 is a diagram showing a drive guide rail and a roller in a depressurization process.
10 is a cross-sectional view illustrating a portion of an upper chamber and an upper door according to another embodiment of the present invention.
11 is a view showing one surface of the upper chamber.
12 is a view showing the upper chamber and the upper door when the inside of the upper chamber is depressurized.
13 is a view showing the upper chamber and the upper door when the inside of the upper chamber is pressurized.
14 is a diagram illustrating an upper chamber and an upper door when the interior of the upper chamber is depressurized according to another embodiment of the present invention.
15 is a cross-sectional view showing a second O-ring according to another embodiment of the present invention.
16 is a view showing a position moving unit according to another embodiment of the present invention.
17 and 18 are views illustrating a second O-ring according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content may be thorough and complete, and the spirit of the present invention may be sufficiently conveyed to those skilled in the art.

In the present specification, when a component is referred to as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed therebetween. In addition, in the drawings, thicknesses of films and regions are exaggerated for effective description of technical content.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, in the present specification,'and/or' is used to mean including at least one of the elements listed before and after.

In the specification, expressions in the singular include plural expressions unless the context clearly indicates otherwise. In addition, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, elements, or a combination of the features described in the specification, and one or more other features, numbers, steps, and configurations It is not to be understood as excluding the possibility of the presence or addition of elements or combinations thereof. In addition, in the present specification, "connection" is used to include both indirectly connecting a plurality of constituent elements and direct connecting.

Further, in the following description of the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted.

1 is a perspective view showing a dual chamber device for a semiconductor component according to a first embodiment of the present invention, FIG. 2 is a view showing a cross section of the upper chamber unit of FIG. 1, and FIG. 3 is a view showing the upper chamber unit of FIG. It is a plan view.

1 to 3, the dual chamber device 10 for semiconductor components may be used in a manufacturing process of semiconductor devices, displays, and other various electronic components. In the present exemplary embodiment, the dual chamber device 10 for a semiconductor component heat-treating a semiconductor element is described as an example.

The dual chamber device 10 for a semiconductor component includes an upper chamber unit 100 and a lower chamber unit 200. Each of the upper chamber unit 100 and the lower chamber unit 200 may heat-treat a semiconductor device. It is located above the lower chamber unit 200 of the upper chamber unit 100. Hereinafter, for convenience of description, the stacking direction of the upper chamber unit 100 and the lower chamber unit 200 is referred to as the Z direction, and directions perpendicular to the Z direction are referred to as the X and Y directions.

The upper chamber unit 100 includes an upper chamber 110, an upper door 120, an upper door driving unit 130, a magazine 140, a wind direction generator 150, a heater 160, a chiller 170, and an intake filter. A unit 180 and an exhaust filter unit 190 are included.

The upper chamber 110 has a first inlet 111 formed on one surface, and a first inner space 112 formed therein. The first entrance 111 is provided as a passage through which the object 20 can enter and exit, and the first internal space 112 is provided as a space for processing the object 20. The upper chamber 110 may be made of aluminum having a predetermined thickness so as to withstand high pressure and high vacuum. The upper chamber 110 has a hexahedral shape.

The upper door 120 is located on one surface of the upper chamber 110 and opens and closes the first entrance 111.

The upper door driving unit 130 raises and lowers the upper door 120 in the vertical direction. The first entrance 111 may be opened or closed by raising and lowering the upper door 120.

The magazine 140 is located in the first inner space 1120. The magazine 140 loads a plurality of objects to be processed 20.

The wind direction generator 150 is located in the first inner space 112. The wind direction generator 150 generates an air flow 30 in the first inner space 112. The wind direction generator 150 may be a fan.

The heater 160 is located in the first inner space 112. The heater 160 heats the air stream 30 generated by the wind direction generator 150.

The chiller 170 is located in the first inner space 112. The chiller 170 may be positioned adjacent to the heater 160. The chiller 170 cools the air stream 30 generated by the wind direction generator 150.

The heater 160 and the chiller 170 are selectively driven by the control unit, and heat or cool the air stream 30.

The intake filter unit 180 is located in the first inner space 112. The intake filter unit 180 filters fine particles contained in the air before the air that has passed through the heater 160 and the chiller 170 is supplied to the magazine 140.

The exhaust filter unit 190 is located in the first inner space 112. The exhaust filter unit 190 is disposed to face the intake filter unit 180 with the magazine 140 therebetween. The exhaust filter unit 190 is located on a path through which the air supplied to the magazine 140 flows into the wind direction generator 150 and filters fine particles contained in the air.

The air 30 that has passed through the exhaust filter unit 190 is re-introduced to the wind direction generator 150 and circulates back to the intake filter unit 180 through the heater 160 and the chiller 170.

The lower chamber unit 200 includes a lower chamber 210, a lower door 220, and a lower door driving unit 230.

The lower chamber 210 is located below the upper chamber 110. The lower chamber 210 has a second inlet 211 formed on one side thereof, and a second inner space 212 formed therein. The second entrance 211 is provided as a passage through which the object 20 can enter and exit, and the second inner space 212 is provided as a space for processing the object 20. The lower chamber 210 may be made of an aluminum material having a predetermined thickness to withstand high pressure and high vacuum. The lower chamber 210 has a hexahedral shape.

The lower door 220 is located on one surface of the lower chamber 210 and opens and closes the second entrance 211.

The lower door driving unit 230 raises and lowers the lower door 220 in the vertical direction. The second entrance 211 may be opened or closed by raising and lowering the lower door 220.

Although not shown in the drawing, in the lower chamber 210, the magazine 40 of the upper chamber unit 100, the wind direction generator 150, the heater 160, the chiller 170, the intake filter unit 180, and exhaust The same components as the filter unit 190 are disposed.

4 is a cross-sectional view showing an upper chamber unit according to an embodiment of the present invention, FIG. 5 is a cross-sectional view showing the upper door driving unit of FIG. 4, and FIG. 6 is a view showing driving guide rails and rollers according to the YZ plane. , Figure 7 is a view showing the driving guide rail and rollers along the XZ plane. The lower chamber unit 200 described in FIG. 1 may have the same configuration as the upper chamber unit described in this embodiment.

4 to 7, the dual chamber device 10 for a semiconductor component further includes a pressing member 310 and a pressure reducing member 320.

The pressing member 310 supplies gas into the upper chamber 110 to pressurize the inside of the upper chamber 110 to a pressure higher than normal pressure. The pressure member 310 includes a gas storage unit 311, a gas supply line 312, a pressure pump 313, and a first gas control valve 314.

The gas storage unit 311 is a tank for storing gas, and high-pressure gas is stored therein.

The gas supply line 312 connects the upper chamber 110 and the gas storage unit 311, and supplies gas from the gas storage unit 311 to the interior of the upper chamber 110.

The pressure pump 313 is installed on the gas supply line 312 and transfers the gas into the upper chamber 110.

The first gas control valve 314 is installed on the gas supply line 312 and is opened and closed by a control unit.

By opening the first gas control valve 314 and driving the pressurization pump 313, the gas stored in the gas storage unit 311 is transferred to the first inner space 112 of the upper chamber 110 through the gas supply line 312. ). The pressure inside the upper chamber 110 increases according to the flow rate of the gas supplied to the first inner space 112 of the upper chamber 110.

The depressurization member 320 exhausts the gas of the first inner space 112 of the upper chamber 110 to the outside to decompress the first inner space 112 to a pressure lower than normal pressure. The pressure reducing member 320 includes a gas exhaust line 321, a pressure reducing pump 322, and a second gas control valve 323. The gas exhaust line 321 has one end connected to the upper chamber 110 and provides a flow path through which gas in the first internal space 112 can be exhausted to the outside.

The pressure reducing pump 322 and the gas control valve 323 are respectively installed in the gas exhaust line 321.

When the second gas control valve 323 is opened and the pressure reducing pump 322 is driven, the gas in the first internal space 112 is exhausted to the outside, and the first internal space 312 is reduced to a pressure lower than normal pressure. do.

The upper door driving unit 130 moves the upper door 120 in the vertical direction. The upper door driving unit 130 includes a driving unit (not shown), driving guide rails 351 and 352, guide rail support units 361 and 362, rollers 371, 372, 373, and roller support units 375 and 376. .

The driving unit generates a moving force of the upper door 120 and transmits it to the upper door 120.

A pair of driving guide rails 351 and 352 is provided, and the longitudinal direction thereof is arranged in parallel with the vertical direction. The driving guide rails 351 and 352 guide the movement of the upper door 120. According to an embodiment, the driving guide rails 351 and 352 are disposed in front of the upper door 120. Alternatively, the driving guide rails 351 and 352 may be disposed on both sides of the upper door 120.

The drive guide rails 351 and 352 have the same shape. When one driving guide rail 351 is described as an example for a specific shape, the driving guide rail 351 is a generally square-shaped rail having first to fourth surfaces 353a to 353d, and the first surface The 353a and the fourth surface 353d are arranged to face each other, and the second surface 353b and the third surface 353c are arranged to face each other. The first surface 353a and the fourth surface 353d are disposed vertically with respect to the front surface of the upper door 120, and the second surface 353b and the third surface 353c are formed with the front surface of the upper door 120. They are placed side by side. The fourth surface 353d is engaged with the guide rail support 361.

A plurality of curved surfaces 354a to 354c are formed on the first to third surfaces 353a to 353c to be spaced apart from each other along the length direction of the driving guide rail 351. Each of the curved surfaces 354a to 354c is formed indented to a predetermined depth into the driving guide rail 351. Each of the curved surfaces 354a to 354c may be a concave curved surface. Each of the curved surfaces 354a to 354c formed on the first to third surfaces 353a to 353c is positioned at the same height. Accordingly, a curved surface 354a formed on the first surface 353a along the circumference of the driving guide rail 351, a curved surface 354b formed on the second surface 353b, and a curved surface 354c formed on the third surface 353c Are connected to each other.

Guide rail support (361, 362) is fixedly installed in the peripheral device. A pair of guide rail support portions 361 and 362 are provided, and respectively support the driving guide rails 351 and 352.

A plurality of rollers 371, 372, 373 are provided, and may be rolled along the surface of the driving guide rail 351. The rollers 371, 372, 373 have first rollers 371 rolling along the first surface 353a and second rollers 372 rolling along the second surface 353b and the third surface 353c. It includes third rollers 373 rolling along.

The first rollers 371 are arranged in a number and intervals corresponding to the curved surfaces 354a formed on the first surface 353a, and each of them individually contacts the curved surfaces 354a.

The second rollers 372 are arranged in a number and intervals corresponding to the curved surfaces 354b formed on the second surface 353b, and each of them individually contacts the curved surfaces 354b.

The third rollers 373 are arranged at a number and intervals corresponding to the curved surfaces 354c formed on the third surface 353c, and each of them individually contacts the curved surfaces 354c.

A pair of roller support portions 375 and 375 are provided, and are spaced apart from each other and disposed side by side. The roller support portions 375 and 376 are fixedly coupled to the front surface of the upper door 120. Each of the roller support portions 375 and 376 supports the rollers 371, 372, and 373 to be rotatable. A receiving space 375a in which the driving guide rail 351 and the rollers 371, 372, 373 can be located is formed on one side of the roller support parts 375 and 376. The rotational shafts of the rollers 371, 372, 373 are coupled so that both ends of the rollers 371, 372, 373 are rotatable.

Hereinafter, an operation process of the upper chamber unit 100 described with reference to FIGS. 4 to 7 will be described.

The upper door 120 moves downward by driving the driving unit to close the first entrance 111 of the upper chamber 110. As the upper door 120 moves, the roller supports 375, 376 and the rollers 371, 372, 373 move together, and the rollers 371, 372, 373 cover the surfaces of the driving guide rails 351 and 352. It rolls along and moves. When the entrance 111 of the upper chamber 110 is closed by the upper door 120, each of the rollers 371, 372, 373 are curved surfaces 354a formed on the surfaces of the driving guide rails 351 and 352. It is located in a one-to-one correspondence with 354c).

Thereafter, a pressurization process or a decompression process is performed in the upper chamber 110. In the case of the pressurization process, gas is supplied into the upper chamber 110 through a gas supply line 332 connected to the gas storage unit 331, and the inside of the upper chamber 110 is pressurized to a pressure higher than normal pressure. A force pushing outward by the pressure inside the upper chamber 110 acts on the upper door 120, and as a result, as shown in FIG. 8, the second rollers 372 are applied to the second surface 353b of the driving guide rail 351. ) Is supported in contact. By the force acting on the upper door 120, the second rollers 372 move along the curved surface 354b of the second surface 353b, and the depth is the deepest among the curved surfaces 354b of the second surface 353b. It is seated and supported in the area A. In the region (A), the force (F1) applied to the second rollers 372 by the pressure inside the upper chamber 110 and the force applied to the second rollers 372 by the driving guide rail 351 (F2) is in equilibrium. Therefore, while the pressing process is in progress, the upper door 120 can be stably positioned at a preset position without being pushed or twisted.

In the case of the decompression process, gas inside the upper chamber 110 is exhausted to the outside, so that the pressure inside the upper chamber 110 is lowered. A force pulled into the upper chamber 110 by the pressure inside the upper chamber 110 acts on the door 120, and as a result, as shown in FIG. 9, the third rollers 373 of the driving guide rail 351 It is supported in contact with the third surface 353c. By the force acting on the upper door 320, the third rollers 373 move along the curved surface 354c of the third surface 353c, and the depth of the curved surface 354c of the third surface 353c is the deepest. It is seated and supported in the region B. In the region B, the force applied to the third rollers 373 by the pressure inside the upper chamber 110 and the force applied to the third rollers 373 by the driving guide rail 351 are balanced. Will be achieved. Therefore, during the decompression process, the upper door 120 can be stably positioned at a preset position without being pushed or twisted.

Although not shown in the drawing, the curved surfaces 354b and 354c respectively formed on the second surface 353b and the third surface 353c of the driving guide rail 351 are not located on the same line in the X direction, but may be arranged to shift from each other. have. In this case, the thickness of the driving guide rail 351 may be reduced.

10 is a cross-sectional view illustrating an upper chamber and a part of an upper door according to another embodiment of the present invention, and FIG. 11 is a view illustrating one surface of the upper chamber. Although not shown in the drawing, the lower chamber and the lower door may be provided with the same structure.

10 and 11, a first receiving groove 113 and a second receiving groove 114 are formed on an open surface of the upper chamber 110. The first receiving groove 113 and the second receiving groove 114 are formed in parallel paths along the periphery of the open surface of the upper chamber 110. The first receiving groove 113 and the second receiving groove 114 may have circumferences of different sizes from each other. According to the embodiment, the first receiving groove 113 is formed on the inside and the second receiving groove 114 is formed on the outside so that the circumference of the second receiving groove 114 is larger than the circumference of the first receiving groove 114 .

The dual chamber device 10 for a semiconductor component further includes a first sealing member 410, a second sealing member 420, and a position moving part 430.

The first sealing member 410 is provided along the periphery of the open surface of the upper chamber 110 and seals between the open surface of the upper chamber 110 and the upper door 120. The first sealing member 410 includes a first O-ring. The first O-ring 410 is made of an elastic material and has a ring shape. The first O-ring 410 may be made of a rubber material. The first O-ring 410 is inserted and fixed in the first receiving groove 113.

The second sealing member 420 is provided along the circumference of the open surface of the upper chamber 110 in a parallel path with the first sealing member 410. The second sealing member 420 includes a second O-ring 421 and position moving parts 423 and 424.

The second O-ring 421 has a ring shape made of an elastic material and is located in the second receiving groove 114. According to an embodiment, the second O-ring 421 may be integrally formed of a rubber material. The second O-ring 421 is not fixedly positioned within the second receiving groove 114 and is provided to be movable. According to an embodiment, the second O-ring 421 may have a convex curved surface facing the upper door 120 and a concave curved rear surface facing the front door 120.

The position moving parts 423 and 424 move the position of the second O-ring 421 within the second demand groove 114. Specifically, the position moving parts 423 and 424 supply gas from the rear of the second O-ring 421 to move the second O-ring 421 forward toward the upper door 120. The position moving parts 423 and 424 include a gas line 423 and a gas pump 424. The gas line 423 has one end connected to the second receiving groove 114 and the other end connected to the outside. The gas pump 424 is installed on the gas line 423. Gas is supplied into the second receiving groove 114 through the gas line 423 by driving the gas pump 424. With the supply of gas, the second O-ring 421 moves forward.

12 is a view showing the upper chamber and the upper door when the inside of the upper chamber is depressurized, and FIG. 13 is a view showing the upper chamber and the upper door when the inside of the upper chamber is pressurized.

First, referring to FIG. 12, when the first inner space 112 of the upper chamber 110 is depressurized, the upper door 120 is pulled toward the upper chamber 110 by the internal pressure of the upper chamber 110. In a state in which the upper door 120 is in close contact with the upper chamber 110, a process treatment is performed in the first inner space 112 of the upper chamber 110, and between the upper chamber 110 and the upper door 120 The sealing state is maintained by 1 O-ring 410.

Referring to FIG. 13, when the first inner space 112 of the upper chamber 110 is pressed, the upper door 120 is pushed out of the upper chamber 110 by the internal pressure of the upper chamber 110, and the upper door ( 120) and the gap between the upper chamber 110 is increased. Accordingly, the first O-ring 410 and the upper door 120 are spaced apart from each other, so that the first O-ring 410 cannot perform a sealing function.

The position moving parts 423 and 424 supply gas into the second receiving groove 114 to move the second O-ring 421 forward toward the upper door 120. The second O-ring 421 is in close contact with the upper door 120 to seal the gap between the upper door 120 and the upper chamber 110. The position moving parts 423 and 424 supply gas into the second receiving groove 114 until the process is completed in the first inner space 112 of the upper chamber 110. The gas contains an inert gas.

As described above, the dual chamber device 10 according to the present invention enables sealing of the gap between the upper chamber 110 and the upper door 120 even when the internal pressure of the upper chamber 110 is different, so that the high-pressure process and the low-pressure process Can be used for everyone.

14 is a diagram illustrating an upper chamber and an upper door when the interior of the upper chamber is depressurized according to another embodiment of the present invention.

Referring to FIG. 14, when the inside of the upper chamber 110 is depressurized, the position moving parts 423 and 424 supply gas into the second receiving groove 114 to close the second O-ring 421 to the upper door 120. ) Can be moved forward. In this case, the sealing state between the upper chamber 110 and the upper door 120 is maintained by the first O-ring 410 and the second O-ring 421.

15 is a cross-sectional view showing a second O-ring according to another embodiment of the present invention.

Referring to FIG. 15, the second O-ring 421 includes a body 421a and a cover 421b surrounding a side surface of the body 421a. The body 421a is provided with a rubber material, and the cover 421b is provided with a material having a lower friction than the body 421a. The cover 412b may be made of synthetic resin or metal.

The cover 421b contacts the upper chamber 110 within the second receiving groove 114. Since the cover 421b is made of a material having relatively low frictional force, the second O-ring 421 can easily move within the second receiving groove 114 when gas is injected. In addition, since the front end of the body 421a is in close contact with the upper door 120, the sealing can be stably maintained.

16 is a view showing a position moving unit according to another embodiment of the present invention.

Referring to FIG. 16, the position moving part 424 includes a connection flow path 424 connecting the first inner space 112 and the second receiving groove 114 of the upper chamber 110. The connection flow path 424 is provided as a flow path having a relatively small diameter.

When the first inner space 112 of the upper chamber 110 is pressurized, the gas in the first inner space 112 flows into the second receiving groove 114 through the connection flow path 424, and the pressure of the introduced gas As a result, the second O-ring 421 is pushed forward and moved.

When the first internal space 112 is depressurized, the internal pressure of the first internal space 112 is applied to the second receiving groove 114 through the connection flow path 424, and the second O-ring 421 is applied by the applied negative pressure. ) Moves backward.

17 and 18 are views illustrating a second O-ring according to another embodiment of the present invention.

17 and 18, the second O-ring 421 has a shape of a balloon through which gas can be injected and is connected to the gas line 423. The second O-ring 421 is made of a material that can expand into a predetermined volume according to gas injection. The second O-ring 421 may be made of a rubber material.

In the depressurization process of the upper chamber 110, the upper door 120 is in close contact with the upper chamber 110, and the first O-ring 421 seals the gap between the upper chamber 110 and the upper door 120. In the pressurizing process of the upper chamber 110, gas is injected into the second O-ring 421 so that the second O-ring 421 expands to a predetermined volume. The expanded second O-ring 421 seals the gap between the chamber 110 and the door 120.

The upper door 120 has a structure in which the first door block 121 and the second door block 122 are integrally coupled by a fastening means 123. The first door block 121 and the second door block 122 may be made of the same material. The first door block 121 has a thickness thicker than that of the second door block 122 and has a larger weight. The second door block 122 is located between the first door block 111 and the upper chamber 110 and has an outer surface exposed to the inner space 111 of the upper chamber 110.

In order to perform a high-pressure or low-pressure process in the upper chamber 110, the upper door 120 must be able to withstand high pressure, and thus has a thick thickness. Therefore, the weight of the upper door 120 increases, which makes maintenance of the upper door 120 difficult. For example, when fume generated in the upper chamber 110 during the process is attached to the inner surface of the upper door 120, a cleaning operation is required. In this case, a method of disassembling the upper door 120 from the upper chamber 110 and recombining after washing is used. When the weight of the upper door 120 is tens to hundreds of Kg, manual work is not easy.

In order to solve this problem, the present invention locates the second door block 122 having a relatively small weight on the side of the upper chamber 110, and the first door block 121 and the second door block 122 are separated. The upper door 120 was designed to be possible. When the fume is attached to the second door block 122, the operator can easily clean the second door block 122 by separating only the second door block 122, and the washed second door block 122 is again replaced with the first door block 121. Can be combined with The upper door 120 to which the first door block 121 and the second door block 122 are combined can stably withstand the process pressure of the upper chamber 110.

In the above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those who have acquired ordinary knowledge in this technical field should understand that many modifications and variations can be made without departing from the scope of the present invention.

10: Dual chamber device for semiconductor components
100: upper chamber unit
110: upper chamber
120: upper door
130: upper door drive unit
140: magazine
150: wind direction generator
160: heater
170: chiller
180: intake filter unit
190: exhaust filter unit
200: lower chamber unit
210: lower chamber
220: lower door
230: lower door drive unit

Claims (6)

An upper chamber having a first inlet and a first inner space;
A lower chamber located below the upper chamber, having a second inlet formed on one surface thereof, and having a second inner space;
An upper door positioned on one surface of the upper chamber in which the first entrance is formed;
An upper door driving unit for opening and closing the first entrance by raising and lowering the upper door;
A lower door positioned on one surface of the lower chamber in which the second entrance is formed;
A lower door driving unit for opening and closing the second entrance by raising and lowering the lower door;
A magazine located in each of the first inner space and the second inner space and for loading objects to be processed;
A wind direction generator positioned in each of the first inner space and the second inner space and generating an air flow; And
It is located in each of the first inner space and the second inner space, and includes a heater for heating the air flow,
The upper chamber and the lower chamber have a hexahedral shape,
The upper door driving unit,
A pair of driving guide rails disposed parallel to each other;
A plurality of rollers provided along a length direction of the driving guide rail and rolling along a surface of the driving guide rail; And
Supports the rollers so as to be rotatable, and includes a roller support fixedly coupled to the upper door,
Each of the driving guide rails,
Has a first surface, a second surface disposed perpendicular to the first surface, and a third surface disposed parallel to the second surface,
A plurality of curved surfaces depressed inward are formed on each of the first to third surfaces to be spaced apart from each other along the longitudinal direction of the driving guide rail,
The rollers
A plurality of first rollers individually contacting the curved surfaces formed on the first surface and rolling along the first surface;
A plurality of second rollers individually contacting the curved surfaces formed on the second surface and rolling along the second surface; And
A dual chamber device for a semiconductor component comprising a plurality of third rollers that individually contact curved surfaces formed on the third surface and roll along the third surface. delete delete The method of claim 1,
A dual chamber device for a semiconductor component, wherein the curved surface of the first surface, the curved surface of the second surface, and the curved surface of the third surface are respectively positioned at the same height. The method of claim 1,
A first sealing member provided along the periphery of the open surface of the upper chamber and sealing between the open surface of the upper chamber and the upper door; And
A dual chamber for semiconductor components including a second sealing member provided along the periphery of the open surface of the upper chamber in a parallel path with the first sealing member and sealing between the open surface of the upper chamber and the upper door Device. The method of claim 5,
A first receiving groove and a second receiving groove are formed in a parallel path along the circumference of the open surface of the upper chamber,
The first sealing member has a ring shape made of an elastic material, and includes a first O-ring inserted and fixed into the first receiving groove,
The second sealing member,
A second O-ring positioned in the second receiving groove in a ring shape made of an elastic material; And
A dual chamber device for a semiconductor component comprising a gas supply line for supplying gas into the second receiving groove so that the second O-ring selectively contacts the door.

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