KR102150836B1 - Molybdenum oxide nanostructure and Method for the same - Google Patents

Abstract

It provides a molybdenum oxide nanostructure and a method of manufacturing the same. The molybdenum oxide layer nanostructure manufacturing method provides a substrate having a flat top surface, extending in a first direction on the top surface of the transparent substrate, growing a nanowire including a molybdenum oxide layer, and growing the nanowire, Growing by a first growth rate in the first direction of the molybdenum oxide film, growing by a second growth rate in a second direction orthogonal to the first direction of the molybdenum oxide film, and the first and second directions of the molybdenum oxide film It is grown by a third growth rate in a third orthogonal direction, the first growth rate is greater than the second growth rate, and the second growth rate is greater than the third growth rate.

Description

Molybdenum oxide nanostructure and method for manufacturing the same {Molybdenum oxide nanostructure and method for the same}

The present invention relates to a molybdenum oxide nanostructure and a method of manufacturing the same.

As the device size decreases to the nano level, quantum mechanisms in which the physical structure depends on the size and shape of the nanostructure come into play. This is more pronounced in nanowires because electrons are confined to a one-dimensional structure, which in turn can generate discrete energy levels that are different from bulk materials. Therefore, quantization depends on the shape and size of the nanowires. Therefore, in order to design an efficient device, the shape and size of the nanostructure must be completely controlled.

To grow nanowires, chemical vapor deposition (CVD), metal compound reduction, electrochemical deposition, metal organic decomposition, physical vapor deposition, PVD), optical lithography, and sputter deposition have been developed.

Among them, chemical-based methods are used to grow nanostructures of various sizes. However, the chemical method is not suitable for growing nanostructures over a large area, and thus is not desirable in the industrial field.

In some other techniques, the growth of nanostructures is driven by catalysis, where the initial thickness and properties of the catalyst play an important role. However, sputtering is a way to grow nanostructures of different shapes and sizes in a single step without the use of a catalyst.

Unexamined Patent Publication No. 10-2017-0112310

The problem to be solved by the present invention is to provide a uniformly formed molybdenum oxide nanostructure.

Another problem to be solved by the present invention is to provide a method for manufacturing a molybdenum oxide nanostructure having a uniform shape.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

A method of manufacturing a molybdenum oxide nanostructure according to an embodiment of the present invention for solving the above problems provides a substrate having a flat top surface, extends in a first direction on the top surface of the substrate, and includes a molybdenum oxide film Growing and growing the nanowires include growing by a first growth rate in the first direction of the molybdenum oxide film and by a second growth rate in a second direction orthogonal to the first direction of the molybdenum oxide film, The molybdenum oxide layer is grown by a third growth rate in a third direction orthogonal to the first and second directions, and the first growth rate is greater than the second growth rate, and the second growth rate is greater than the third growth rate.

The molybdenum oxide film nanostructure according to an embodiment of the present invention for solving the above other problems includes a substrate and a nanowire extending vertically on an upper surface of the substrate and including an orthorhombic crystalline molybdenum oxide film.

Specific details of other embodiments are included in the detailed description and drawings.

According to an embodiment of the present invention, there are at least the following effects.

That is, the molybdenum oxide nanostructure according to some embodiments of the present invention can be mass-produced in a large area,

In the method of manufacturing a photoelectric device according to some embodiments of the present invention, a shape for varying various characteristics may be adjusted according to temperature, power, and deposition time.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a front view illustrating a molybdenum oxide nanostructure according to some embodiments of the present invention.
2 and 3 are intermediate steps for explaining a method of manufacturing a molybdenum oxide nanostructure according to some embodiments of the present invention.
4 is a plan view SEM (scanning electron microscopy) image for explaining the surface state of Example 1 of the present invention.
5 is a partially enlarged view of FIG. 4.
6 is a plan view SEM image for explaining the surface state of Example 2 of the present invention.
7 is a partially enlarged view of FIG. 6.
8 is a plan view SEM image for explaining the surface state of Example 3 of the present invention.
9 is a partially enlarged view of FIG. 8.
10 is an SEM image for explaining the surface state of Example 4 of the present invention.
11 is an SEM image for explaining a cross-sectional state of Example 4 of the present invention.
12 is an SEM image for explaining the surface state of Example 2 of the present invention.
13 is an SEM image for explaining the cross-sectional state of Example 2 of the present invention.
14 is an SEM image for explaining the surface state of Example 5 of the present invention.
15 is an SEM image for explaining a cross-sectional state of Example 5 of the present invention.
16 is an SEM image for explaining the surface state of Example 6 of the present invention.
17 is an SEM image for explaining the cross-sectional state of Example 6 of the present invention.
18 is an SEM image for explaining the surface state of Example 7 of the present invention.
19 is an SEM image for explaining the cross-sectional state of Example 7 of the present invention.
20 is an SEM image for explaining the surface state of Example 8 of the present invention.
21 is an SEM image for explaining a cross-sectional state of Example 8 of the present invention.
22 is an SEM image for explaining the surface state of Example 9 of the present invention.
23 is an SEM image for explaining the surface state of Example 10 of the present invention.
24 is an SEM image for explaining the surface state of Example 11 of the present invention.
25 is an SEM image for explaining the surface state of Example 12 of the present invention.
26 is a transmission electron microscopy (TEM) image and energy-dispersive X-ray spectroscopy (EDS) spectrum of a molybdenum oxide nanowire according to some embodiments of the present invention.
27 is an FFT (fast Fourier transform) observation diagram of the bottom portion of the molybdenum oxide nanowire of FIG. 26.
28 is an FFT observation view of a body portion of the molybdenum oxide nanowire of FIG. 26.
29 is an FFT observation view of a tip portion of the molybdenum oxide nanowire of FIG. 26.
30 is an X-ray diffraction (XRD) measurement result of some embodiments of the present invention.

Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms different from each other, and only these embodiments make the disclosure of the present invention complete, and common knowledge in the technical field to which the present invention pertains. It is provided to completely inform the scope of the invention to those who have it, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

Although the first, second, etc. are used to describe various elements, components and/or sections, of course, these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, it goes without saying that the first element, the first element, or the first section mentioned below may be a second element, a second element, or a second section within the technical scope of the present invention.

When an element or layer is referred to as “on” or “on” of another element or layer, it is possible to interpose another layer or other element in the middle as well as directly above the other element or layer. All inclusive. On the other hand, when a device is referred to as "directly on" or "directly on", it indicates that no other device or layer is interposed therebetween.

Spatially relative terms "below", "beneath", "lower", "above", "upper", etc., as shown in the figure It may be used to easily describe the correlation between the device or components and other devices or components. Spatially relative terms should be understood as terms including different directions of the device during use or operation in addition to the directions shown in the drawings. For example, if an element shown in the figure is turned over, an element described as “below or beneath” another element may be placed “above” another element. Accordingly, the exemplary term “below” may include both directions below and above. The device may be oriented in other directions as well, in which case spatially relative terms may be interpreted according to the orientation.

The terms used in the present specification are for describing exemplary embodiments and are not intended to limit the present invention. In this specification, the singular form also includes the plural form unless specifically stated in the phrase. As used in the specification, "comprises" and/or "comprising" refers to the presence of one or more other components, steps, actions and/or elements in which the recited component, step, operation and/or element Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used as meanings that can be commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not interpreted ideally or excessively unless explicitly defined specifically.

Hereinafter, a molybdenum oxide nanostructure according to some embodiments of the present invention will be described with reference to FIG. 1.

1 is a front view illustrating a molybdenum oxide nanostructure according to some embodiments of the present invention.

Referring to FIG. 1, a molybdenum oxide nanostructure according to some embodiments of the present invention includes a substrate 100 and a nanowire 200.

The substrate 100 may be a silicon substrate. The substrate 100 may be a p-type silicon substrate. Alternatively, in the molybdenum oxide nanostructure according to some embodiments of the present invention, the substrate may be a transparent substrate, for example, a glass substrate. Alternatively, the substrate 100 of the molybdenum oxide nanostructure according to some embodiments of the present invention may be an opaque substrate.

The substrate 100 may include side surfaces in the first direction X and the second direction Y, and upper and lower surfaces in the third direction Z. In this case, the first direction X, the second direction Y, and the third direction Z may be directions that intersect each other and may be directions that are orthogonal to each other. Accordingly, the first direction X, the second direction Y, and the third direction Z may be orthogonal directions.

The thickness of the substrate 100 may be sufficiently thick to support upper and lower structures. For example, the thickness of the substrate 100 may be 100 to 1000 μm. However, this embodiment is not limited thereto.

The melting point of the substrate 100 may be 200°C or higher. Accordingly, when the nanowire 200 is formed at a temperature of 200°C or higher, the growth of the nanowire 200 may be promoted while the surface of the substrate 100 melts.

The nanowire 200 may be formed on the upper surface of the substrate 100. The nanowire 200 may include a molybdenum oxide film. Specifically, the nanowire 200 may include MoO ₃ .

The nanowire 200 may extend in the third direction Z. The nanowire 200 will be described in more detail later, but may be a cylindrical structure extending one-dimensionally. MoO ₃ of the nanowire 200 may be crystalline. The MoO ₃ crystal system of the nanowire 200 may be orthorhombic.

The growth direction of the nanowire 200 may be a (001) plane direction of MoO ₃ . The (001) plane direction may be a third direction (Z). The nanowire 200 may be inclined or bent in a direction other than the third direction Z after growing in the third direction Z or while growing in the third direction Z.

That is, the nanowire 200 may be a one-dimensional material growing in a vertical direction, that is, in the third direction Z. There may be a plurality of nanowires 200. The length of the nanowire 200 may be determined according to the deposition time. The length of the nanowire 200 may be 10 to 2000 nm, but is not limited thereto.

Hereinafter, a method of manufacturing an optoelectronic device according to some embodiments of the present invention will be described with reference to FIGS. 1 to 3. Descriptions overlapping with the above-described embodiments will be simplified or omitted.

2 and 3 are diagrams of intermediate steps for explaining a method of manufacturing a molybdenum oxide nanowire according to some embodiments of the present invention.

First, referring to FIG. 2, a substrate 100 is provided.

The substrate 100 may be a p-type silicon substrate. The substrate 100 may be cleaned by ultrasonic treatment using acetone and distilled water. The substrate 100 may also be a transparent glass substrate. However, this embodiment is not limited thereto. The upper surface of the substrate 100 may be flat. Accordingly, the nanowires 200 may be vertically grown on the upper surface of the substrate 100 in the future.

Subsequently, referring to FIG. 3, a free nanowire 200p is grown on the upper surface of the substrate 100. The free nanowire 200p may be completed as the nanowire 200 when growth is completed later. That is, the free nanowire 200p may mean a nanowire during growth.

The free nanowire 200p may include a molybdenum oxide film, that is, MoO ₃ . The free nanowire 200p may be deposited by sputtering a pure molybdenum target in an oxygen atmosphere. Alternatively, in the method of manufacturing a molybdenum oxide nanowire according to some embodiments of the present invention, the free nanowire 200p may be deposited by sputtering a MoO ₃ target.

The reactive DC sputtering 50 may be performed by injecting argon (Ar) gas and oxygen (O2) gas. In this case, the mixing ratio of the argon gas and the oxygen gas may be 100:0 to 100:30.

The free nanowire 200p may be grown by reactive DC sputtering 50. The shape and length of the free nanowire 200p may vary depending on the deposition temperature, deposition power, and deposition time of the reactive DC sputtering 50. Therefore, the shape and length of the nanowire 200 can be adjusted in consideration of the deposition temperature, deposition power, and deposition time.

Specifically, the deposition temperature of the reactive DC sputtering 50 may be determined within a range of 200 to 1000°C. However, this embodiment is not limited thereto. If the deposition temperature of the reactive DC sputtering 50 is too low, the growth of the nanowire 200 may not be smooth, and if the deposition temperature of the reactive DC sputtering 50 is too high, the shape of the nanowire 200 is uniform. I can't.

In addition, the deposition power of the reactive DC sputtering 50 may be determined within a range of 10 to 500W. However, this embodiment is not limited thereto. If the deposition power of the reactive DC sputtering 50 is too low, the growth of the nanowire 200 may not be smooth, and if the deposition power of the reactive DC sputtering 50 is too high, the shape of the nanowire 200 is uniform. Otherwise, the nanowire 200 may not grow and may have a laminated structure in the form of a film, which is not preferable.

In addition, the deposition time of the reactive DC sputtering 50 may be determined within a range of 1 to 200 minutes. However, this embodiment is not limited thereto. If the deposition time of the reactive DC sputtering 50 is too short, the length growth of the nanowire 200 may not be smooth, and if the deposition time of the reactive DC sputtering 50 is too long, the length and thickness of the nanowire 200 The nanowire 200 may not grow because it becomes thicker than necessary or has a film shape.

Subsequently, referring to FIG. 1, the free nanowire 200p may be fully grown to become the nanowire 200. The nanowire 200 may be grown in a third direction Z, and the third direction Z may be a molybdenum oxide film, that is, a (001) direction of MoO ₃ .

Example 1-400°C, 20min, 50W

Nanowires of MoO ₃ were deposited on a silicon substrate by using a molybdenum target through reactive sputtering. Argon and oxygen were injected at 50 sccm and 10 sccm, respectively, and the pressure in the chamber was maintained at 4 mTorr. The DC power of the evaporation process was 50W. The substrate was rotated at 5 rpm during the deposition process for uniform deposition. The deposition time was set to 20 minutes. The vapor deposition temperature was 400°C.

Example 2-500°C

It was the same as in Example 1, except that the deposition temperature of the molybdenum oxide film was 500°C.

Example 3-600°C

It was the same as in Example 1, except that the deposition temperature of the molybdenum oxide film was 500°C.

FIG. 4 is a planar scanning electron microscopy (SEM) image for explaining the surface state of Example 1 of the present invention, and FIG. 5 is a partially enlarged view of FIG. 4. 6 is a plane SEM image for explaining the surface state of Example 2 of the present invention, and FIG. 7 is a partially enlarged view of FIG. 6. 8 is a plan view SEM image for explaining the surface state of Example 3 of the present invention, and FIG. 9 is a partially enlarged view of FIG. Specifically, FIGS. 5, 7 and 9 are enlarged views in which an area of 200 x 200 nm ² of FIGS. 4, 6 and 8 is enlarged, respectively.

4 to 9, the growth of the molybdenum oxide nanostructure is very strongly dependent on the deposition temperature. In Example 1, pin-type nanowires are uniformly distributed, vertically aligned, and packed with high density (Figs. 4 and 5).

The measured average diameter of the nanowires of Example 1 is about 35 nm. However, when the temperature rises from 400° C. to 500° C., the diameter of the nanowires is observed at various viewing angles and is measured relatively uniformly (Example 2, Figs. 6 and 7). This may be due to the improvement of surface diffusion (surfacediffusion) according to the temperature increase. That is, the temperature can enhance the surface diffusion rate (surfacediffusion rate) and can generate randomness (randomness).

The role of the deposition temperature in the growth of the nanowires can be confirmed at higher temperatures (FIGS. 8 and 9 ). In Example 3, the shape of the nanowires was changed to a continuous rough film in the shape of a leaf, and had a very low density. This can be due to flow dynamics with temperature. This clearly shows that temperature plays a very important role in the growth of molybdenum oxide nanostructures using sputtering.

Example 4-500°C, 10min, 50W

It was the same as in Example 2, except that the deposition time of the molybdenum oxide film was 10 minutes.

Example 5-50min

It was the same as in Example 2, except that the deposition time of the molybdenum oxide film was 50 minutes.

Example 6-80min

It was the same as in Example 2, except that the deposition time of the molybdenum oxide film was 10 minutes.

As in Examples 2 and 4 to 6, as the deposition time is controlled, the surface shape of the MoO ₃ nanowires can be very largely changed.

10 is an SEM image for explaining the surface state of Example 4 of the present invention, and FIG. 11 is an SEM image for explaining the cross-sectional state of Example 4 of the present invention. 12 is an SEM image for explaining the surface state of Example 2 of the present invention, and FIG. 13 is an SEM image for explaining the cross-sectional state of Example 2 of the present invention. 14 is an SEM image for explaining the surface state of Example 5 of the present invention, and FIG. 15 is an SEM image for explaining the cross-sectional state of Example 5 of the present invention. FIG. 16 is an SEM image for explaining the surface state of Example 6 of the present invention, and FIG. 17 is an SEM image for explaining the cross-sectional state of Example 6 of the present invention.

10 to 17, the length of the nanowire may be adjusted by adjusting the deposition time. In fact, the increase in deposition time, i.e., growth time, was about 50, 200, 800 and in Example 4 (10 minutes), Example 2 (20 minutes), Example 5 (50 minutes) and Example 6 (80 minutes). It shows the length of the nanowires of 1200nm. This means that during deposition under certain conditions, a rapid change in growth power does not occur. The average diameter of the nanowires in Example 4 (10 minutes), Example 2 (20 minutes), Example 5 (50 minutes) and Example 6 (80 minutes) may be about 18, 35, 60, and 80 nm. .

Example 7-100W

It was the same as in Example 2, except that the DC power of the molybdenum oxide film deposition process was 100W.

Example 8-150W

It was the same as in Example 2, except that the DC power of the molybdenum oxide film deposition process was 150W.

18 is an SEM image for explaining the surface state of Example 7 of the present invention, and FIG. 19 is an SEM image for explaining the cross-sectional state of Example 7 of the present invention. FIG. 20 is an SEM image for explaining the surface state of Example 8 of the present invention, and FIG. 21 is an SEM image for explaining the cross-sectional state of Example 8 of the present invention.

Referring to FIGS. 12, 13, and 18 to 21, the shape and size of the nanowire may be controlled by a change in the surfaceadd atom rate. In fact, as the sputtering power increases, the incoming atomic flux on the substrate increases, and this can cause a change in the surface shape. Thus, sputtering power can be used as one parameter of nanowire growth.

Looking at Examples 7 and 8, nanowires that are not uniform and have a low density can be observed. In fact, as the sputtering power increases from 50W to 150W, the shape of the MoO ₃ nanowire changes from a cylindrical shape to an inclined shape. At higher sputtering power, a nanotip structure is observed at the end of the nanowire. It can be formed smaller than the lower part. The size of the nanowire increases with the deposition power, but high power is not necessarily good for growing uniform and dense nanowires. This change in shape may be due to the high add atom flux density due to excessive evaporation of the Mo atoms in the target.

Example 9-glass/500 °C

It was the same as in Example 2, except that the substrate was a glass substrate instead of a silicon substrate.

Example 10-glass/550 °C

It was the same as in Example 9, except that the deposition temperature was set to 550 ℃.

Example 11-glass/600 °C

It was the same as in Example 9 except that the deposition temperature was set to 600 ℃.

Example 12-glass/650 °C

It was the same as in Example 9 except that the deposition temperature was set to 650 ℃.

22 is an SEM image for explaining the surface state of Example 9 of the present invention, and FIG. 23 is an SEM image for describing the surface state of Example 10 of the present invention. 24 is an SEM image for explaining the surface condition of Example 11 of the present invention, and FIG. 25 is an SEM image for explaining the surface condition of Example 12 of the present invention.

Referring to Figs. 22 to 25, since the glass has a lower thermal conductivity than that of silicon, in the case of Example 9, a relatively smooth and continuous film was observed at 500°C. On the other hand, from 550° C. of Example 10, a distinct nanowire shape begins to appear. Therefore, the optimum growth temperature of the nanowire moves to 550°C, which confirms once again that the temperature plays a very important role in the growth of the nanowire.

At the deposition temperature of 600° C. of Example 11, the nanowires cannot grow upward, and can be grown by lying on their side. In Example 12 where the temperature was higher, the nanowire structure was completely disappeared, and only a very flat and film-shaped molybdenum oxide nanostructure was observed. This is similar to the shape of MoO ₃ on the silicon substrate of Example 3. This confirms that an appropriate temperature is required to form MoO ₃ nanowires on glass as well as silicon.

26 is a transmission electron microscopy (TEM) image and an energy-dispersive X-ray spectroscopy (EDS) spectrum of a molybdenum oxide nanowire according to some embodiments of the present invention.

Referring to FIG. 26, a TEM image of a single nanowire can be confirmed. In the EDS spectrum, except for the C and Cu peaks derived from the TEM grid, only Mo and O were detected. That is, the composition of the MoO ₃ nanowire can be confirmed. The stoichiometric ratio (O:Mo) of O:Mo estimated from the EDS spectrum is close to 3. This result confirms the centrosymmetric configuration of MoO ₃ .

FIG. 27 is an FFT observation view of the bottom portion of the molybdenum oxide nanowire of FIG. 26, and FIG. 28 is an FFT observation view of the body portion of the molybdenum oxide nanowire of FIG. 26. 29 is an FFT observation view of a tip portion of the molybdenum oxide nanowire of FIG. 26.

Referring to FIGS. 26 to 29, it can be seen that all parts (bottom, body, and tip) of the nanowire are clearly the same structure. In addition, the interplanar spacing along the two different directions is determined to be about 0.39 nm and 0.36 nm, respectively, corresponding to d ₁₀₀ and d ₀₀₁ of the orthorhombic α-MoO ₃ phase.

FFT analysis of a single nanowire yields a pattern represented by an array of constant diffraction spots representing single crystal properties along the [010] domain axis of the α-MoO ₃ nanowire and preferential growth in the c axis or [001] direction. The preferential growth of α-MoO ₃ according to the [001] direction may be determined by a highly anisotropic crystal structure.

In α-MoO ₃ , the distorted [MoO6] octahedron shares four corners to form a plane, and the two planes share an octahedral corner along the [001] direction and bond together. All these double layers are stacked along the [010] direction with weak van der Waals forces. In addition, in terms of energy, the growth rate of the plane along the axis of the α-MoO ₃ crystal has a size of {001}>{100}> {010} in the following order.

Therefore, it may be very easy for the α-MoO ₃ crystal to grow along the [001] direction to form a one-dimensional structure having the exposed surface of the {010} facet. As a result, α-MoO ₃ may form various elongated shapes (rods, wires, belts, tubes, etc.) due to an abnormal crystal structure that is advantageous for anisotropic growth.

30 is an X-ray diffraction (XRD) measurement result of some embodiments of the present invention.

Referring to FIG. 30, the strongest diffraction peaks of MoO ₃ among the XRD patterns appear at 2θ = 12.8°, 25.7°, and 39.0° corresponding to (001), (002) and (003), respectively. This is a result indicating monoclinic symmetry. In addition, this high-intensity XRD peak indicates the growth of highly crystalline MoO ₃ nanowires having preferential orientation in the (001) plane.

Since the molybdenum target is used to grow the MoO ₃ nanostructure in a single step process, a growth reaction based on Gibbs free energy (ΔG) can be derived. Various growth reactions may be possible, but only a few reactions allow spontaneous reactions as the Gibbs free energy is negative.

For example, the following reactions are possible.

Mo(s) + O ₂ (g) = MoO ₂ (s).................................. ......(One)

2Mo(s) + 3O ₂ (g) = 2MoO ₃ (s)........................ ...(2)

Here, s and g mean solid and gaseous states, respectively. Reaction equations (1) and (2) have Gibbs free energies of -447 and -584 kJ-mol ^-1 K ^-1 at 500°C, respectively. The TEM and XRD results confirm the presence of the MoO ₂ state in the molybdenum oxide nanostructure. Thus, it can be assumed that MoO ₂ (s) converted to MoO ₃ (s) after reaction of the O ₂ gas.

Also, possible reactions are as follows.

2MoO ₂ (s) + O ₂ (g) = 2MoO ₃ (s)....................... ....(3)

The Gibbs free energy for this reaction is -201 kJ-mol ^-1 K ^-1 . However, since the reaction of (2) has the minimum Gibbs free energy, it can be confirmed that this is the dominant reaction to the formation of nanowires.

Since the molybdenum oxide nanowire according to the present embodiment is grown in a vertical direction by a large area method, mass production may be possible. In addition, it is possible to adjust the shape, length and size by controlling the deposition time, deposition temperature, and deposition power. Therefore, unlike conventional methods, it is possible to easily mass-produce nanowires having appropriate shapes and sizes.

Although the embodiments of the present invention have been described with reference to the above experimental examples and the accompanying drawings, those of ordinary skill in the art to which the present invention pertains to implement in other specific forms without changing the technical spirit or essential features of the present invention. You can understand that it can be. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not limiting.

100: substrate 200: nanowire

Claims (18)

It provides a substrate having a flat top surface,
Using reactive sputtering, comprising growing nanowires extending in a first direction on an upper surface of the substrate and including a molybdenum oxide film,
The molybdenum oxide film includes MoO ₃ ,
The first direction is a direction of a (001) crystal plane of the molybdenum oxide film. delete delete delete delete The method of claim 1,
A method of manufacturing a molybdenum oxide nanostructure having a crystal system of the molybdenum oxide layer being orthorhombic. The method of claim 1,
Growing the nanowires is a molybdenum oxide nanostructure manufacturing method comprising depositing the nanowires at a temperature of 200 to 1000 ℃. The method of claim 1,
Growing the nanowires is a molybdenum oxide nanostructure manufacturing method comprising depositing the nanowires for a deposition time of 1 to 200 minutes. The method of claim 1,
Growing the nanowires is a molybdenum oxide nanostructure manufacturing method comprising depositing with a DC power of 10 to 500W. delete The method of claim 1,
Growing the nanowires is a method for manufacturing a molybdenum oxide nanostructure comprising depositing the nanowires using a MoO ₃ target. The method of claim 1,
Growing the nanowires is a method of manufacturing a molybdenum oxide nanostructure comprising depositing the nanowires using a pure Mo target. The method of claim 1,
Growing the nanowires comprises depositing the nanowires in a mixture ratio of Ar gas and oxygen (O ₂ ) gas to 100:0 to 100:30.
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