KR102148555B1 - Heater assembly - Google Patents

Abstract

The present invention relates to a heater assembly mounted on a bonding device for bonding chips.
A heater assembly according to an embodiment of the present invention includes a heating element having a heating thin film layer formed on a lower surface thereof, an insulator mounted under the heating element so as to form a spaced space through which air can be introduced, and a base portion on which the insulator is fixedly installed.

Description

Heater assembly {Heater assembly}

The present invention relates to a heater assembly, and more particularly, to a heater assembly capable of rapid and accurate temperature control in manufacturing a semiconductor package.

In general, semiconductor chips are highly integrated that must accompany miniaturization and high functionality of electronic products. In addition to the high integration of semiconductor chips, semiconductor packages also have limitations in lightness, thinness, and shortness using only the conventional wire bonding method. Therefore, in recent years, without using wire bonding, an electrode member such as a solder bump or a pad is formed on a pad that is an input/output terminal of a semiconductor chip, and then the semiconductor chip is placed on a wiring board such as a carrier substrate or a tape wiring board. It is widely used in a method of performing a wiring process by bonding using an electrode member or stacking it on another semiconductor chip. As representative examples, there is a flip chip bonding technique in which the semiconductor chip is bonded to a substrate in an inverted state, and a three-dimensional stacking technique of a plurality of semiconductor chips using a through silicon via (TSV).

In the semiconductor package technology using the flip chip bonding and TSV, bonding of electrodes is performed through a thermocompression bonding method or a laser compression bonding method. Among these, the thermocompression bonding method is performed by a heater assembly comprising a pressurizing head having a heater embedded in the pressurizing arm and a suction hole for adsorbing semiconductor chips at the tip of the pressurizing arm.

For example, in the flip chip bonding process, the heater assembly adjusts the position of the flip chip to be bonded to a predetermined position of the wiring board with the help of a position alignment device such as an optical recognition device, and then lowers the pressing arm to thereby remove the flip chip. The flip chip is heated while being pressed against the wiring board while heating the heater inside the pressing arm to conduct heat conduction toward the pressing head, and the flip chip electrode pads on the wiring board by maintaining this state for a predetermined time. Bond. If necessary, a thermosetting resin may be applied between the flip chip and the substrate, and the thermosetting resin may be cured during the thermocompression, thereby protecting the bonding structure of the flip chip. Thereafter, the heater of the pressure head is turned off and the pressure arm is raised so that the substrate can be withdrawn.

In the semiconductor package process using the TSV, the through electrodes exposed on the surfaces of the semiconductor chips are aligned to face each other, and then the semiconductor chips stacked with the heater assembly are heated to perform bonding between the through electrodes. Can be used.

As semiconductor packages are continuously required to be light and thin, the distance between electrodes on a semiconductor chip is minimized, and precise temperature control of the heater assembly is required for reliable bonding without cracks due to short circuits or thermal shocks in the connection between the electrodes. . In particular, rapid temperature control for implementing rapid heating and rapid cooling is essential as the distance and height between electrodes decrease as the degree of integration of the semiconductor package increases.

However, the conventional heater assembly for thermocompression bonding has a complex heating structure and a cooling structure using a heating structure such as a pattern electrode or a linear resistance wire, and accordingly, the heater can be quickly heated and then rapidly cooled again. It is difficult to improve efficiency and control precisely.

The technical problem to be solved by the present invention is that as the degree of integration of the semiconductor package increases, the structure is simple, and rapid and precise temperature control for rapid heating and rapid cooling is possible, so that the semiconductor manufacturing process can be performed by thermal pressurization. It is to provide a heater assembly.

A heater assembly according to an embodiment of the present invention for achieving the above technical problem is a heater assembly mounted on a bonding device for bonding a chip, comprising: a heating element having a heating thin film layer formed on a lower surface thereof; An insulator mounted under the heating element so that a spaced space through which air can be introduced is formed; And a base portion to which the insulator is fixedly installed.

In some embodiments, a fixing member that penetrates the heating element and is fixed to the insulator through a power washer may be further included so that the heat of the heating thin film layer is evenly transmitted to the heating element.

In some embodiments, it may further include a consumable pad detachably mounted on the upper surface of the heating element.

In some embodiments, the base unit may provide a negative pressure for circulation of the air introduced through the spaced space.

In some embodiments, the base portion may be provided with a main flow path guiding the movement of gas for generating negative pressure, and an air flow path branching from a side portion of the main flow path and extending upwardly of the base portion.

In some embodiments, the air flow path may be provided in a plurality of branches branched from one side and the other side of the main flow path.

In some embodiments, the base portion includes a main flow path guiding the movement of gas for generating negative pressure, a first cooling flow path through which a gas for cooling is supplied, and an upper edge of the base portion at an end of the first cooling flow path. A second cooling flow path extending along the line, a third cooling flow path extending downward from an end of the second cooling flow path, a fourth cooling flow path extending from an end of the third cooling flow path on a lower surface of the base portion, A fifth cooling passage extending from the end of the fourth cooling passage to the main passage may be provided.

In some embodiments, the first cooling passage may extend in a zigzag shape on a lower surface of the base portion.

In some embodiments, the base portion is provided with a suction passage providing gas for attaching the consumable pad to the upper surface of the heating element, and a discharge passage providing gas for separating the consumable pad from the upper surface of the heating element. I can.

In some embodiments, the base portion is provided with a main flow path guiding the movement of gas for generating negative pressure, and the discharge flow path may be branched from an upper side of the main flow path to have a diameter smaller than that of the main flow path.

In some embodiments, in the base portion, a base portion fixing hole through which a first fixing bolt penetrating through the insulator is fixed, and a base portion through hole through which a second fixing bolt penetrating through the insulator penetrates for assembly with a bonding device. Can be formed.

In some embodiments, the insulator includes a first plate provided with a support protrusion for forming the separation space; A second plate fixed to an upper portion of the base portion; And a third plate connected between the first plate and the second plate.

In some embodiments, the insulator may have a suction hole for guiding a gas for attaching the consumable pad to the upper surface of the heating element, and a discharge hole for guiding a gas for separating the consumable pad from the upper surface of the heating element. have.

In some embodiments, a cooling hole for guiding the air introduced through the spaced space to the base portion may be formed in the insulator.

In some embodiments, an insulator assembly hole into which the fixing member penetrating the heating element is inserted may be formed in the insulator.

In some embodiments, the height of the insulator assembly hole may be designed to be lower than the height of the support protrusion for forming the spaced space so that the power washer supplying power to the heating element is fixed to the insulator assembly hole via a fixing member. I can.

In some embodiments, electrode bodies for providing different electrodes may be positioned on both sides of the heating element.

In some embodiments, a power washer for supplying power to the electrode body may be connected to the heating element.

In some embodiments, the heating element may be equipped with a detection sensor for measuring temperature.

In some embodiments, the heating element has a suction hole for attaching a consumable pad to the upper surface of the heating element using a suction force of gas, and a blowing hole for separating the consumable pad on the upper surface of the heating element using a discharge power of gas. Can be.

In some embodiments, the suction hole may be provided in a plurality of spaced apart on the same line with the blowing hole therebetween.

According to an embodiment of the present invention, by forming a heating thin film layer on the heating element, a heater assembly capable of precise temperature control by instantaneous temperature increase and cooling of the heating element can be provided.

In addition, according to an embodiment of the present invention, a heater assembly capable of uniform heat transfer to an object to be treated by a heating element with suppressed warpage, as well as an improvement in lifespan, and additionally providing a method of regenerating a heating element Can be provided.

1 is an exploded perspective view of a heater assembly according to an embodiment of the present invention.
2 is a perspective view of a heater assembly according to an embodiment of the present invention.
3 is a combined perspective view of the heater assembly viewed from the lower side according to an embodiment of the present invention.
4 is a front view of a heater assembly according to an embodiment of the present invention.
5A and 5B are plan views of a heater assembly according to an embodiment of the present invention.
6 is a perspective view showing an insulator of a heater assembly according to an embodiment of the present invention.
7 is a plan view showing a base portion of a heater assembly according to an embodiment of the present invention.
8 is an internal configuration diagram showing a base portion of a heater assembly according to an embodiment of the present invention.
9 is an exploded perspective view of a heater assembly according to another embodiment of the present invention.
10 is a perspective view of a heater assembly according to another embodiment of the present invention.
11 is a combined perspective view of a heater assembly viewed from a lower side according to another embodiment of the present invention.
12 is a plan view showing a base portion of a heater assembly according to another embodiment of the present invention.
13 is an internal configuration diagram showing a base portion of a heater assembly according to another embodiment of the present invention.
14 is an exploded perspective view of a heater assembly according to another embodiment of the present invention.
15 is a combined perspective view of a heater assembly according to another embodiment of the present invention.
16 is a plan view showing a base portion of a heater assembly according to another embodiment of the present invention.
17 is an internal configuration diagram showing a base portion of a heater assembly according to another embodiment of the present invention.
18 shows a heating thin film layer 110 according to an embodiment of the present invention.
19A and 19B are images showing the temperature distribution of the heating thin film layer 110 including the multistage sub thin film layers according to an embodiment of the present invention.
20 is a graph of temperature change of the heating thin film layer 110 over time when a constant voltage power is applied when a silicon oxide diffusion barrier layer is formed according to an exemplary embodiment of the present invention.
21 is a graph showing a performance temperature profile of a heater assembly according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are provided to more completely describe the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows. It is not limited to the examples. Rather, these embodiments are provided to make the present disclosure more faithful and complete, and to completely convey the spirit of the present invention to those skilled in the art.

In addition, in the following drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description, and the same reference numerals refer to the same elements in the drawings. As used herein, the term “and/or” includes any and all combinations of one or more of the corresponding listed items.

The terms used in this specification are used to describe specific embodiments, and are not intended to limit the present invention. As used herein, the singular form may include the plural form unless the context clearly indicates another case.

Also, as used herein, “comprise” and/or “comprising” specify the presence of the mentioned shapes, numbers, steps, actions, members, elements and/or groups thereof. And does not exclude the presence or addition of one or more other shapes, numbers, actions, members, elements, and/or groups.

In this specification, terms such as first and second are used to describe various members, parts, regions, layers and/or parts, but these members, parts, regions, layers and/or parts are used in these terms. It is obvious that it should not be limited by. this

These terms are only used to distinguish one member, part, region, layer or part from another region, layer or part.

Accordingly, a first member, part, region, layer or part to be described below may refer to a second member, part, region, layer or part without departing from the teachings of the present invention.

In this embodiment, the heater assembly may be a heater mounted on a bonding device for stacking chips or bonding chips on a substrate. For example, the heater assembly may be used in a semiconductor package using a TSV (Through Silicon Via) that connects the upper chip and the lower chip with a through electrode. However, the present invention is not limited thereto, and may be applied to various types of bonding devices for bonding chips.

1 is an exploded perspective view of a heater assembly according to an embodiment of the present invention, FIG. 2 is a combined perspective view of a heater assembly according to an embodiment of the present invention, and FIG. 3 is viewed from a lower side according to an embodiment of the present invention. A combined perspective view of the heater assembly, FIG. 4 is a front view of the heater assembly according to an embodiment of the present invention, and FIGS. 5A and 5B are plan views of the heating element 100 according to various embodiments of the present invention.

1 to 4, in the heater assembly 10 according to an embodiment of the present invention, a heating element 100 including a substrate 120 on which a heating thin film layer 110 is formed on a rear surface, and gas inflow The insulator 200 provides a space S for the heating thin film layer 110 so as to be achieved, and a base part 300 for circulation of gas.

The heating thin film layer 110 of the heating element 100 is a heating layer that can be rapidly heated and cooled at a controlled temperature for bonding or manufacturing a semiconductor chip or package. For such high-speed heating and high-speed cooling, in order to minimize the mass of the heater, the heater is a heating thin film layer 110 that is a planar heating element of a thin film. The thickness of the heating film layer 110 according to the exemplary embodiment of the present invention has a size of 5 μm or less to enable rapid temperature control and heat transfer without bending, which will be described later.

The heating thin film layer 110 is a conductive thin film capable of instantaneous heat generation by resistance when power is applied, and an ITO (In2O3: SnO2 = 90:10, indium tin oxide) conductive film or FTO (F-doped SnO2: fluorine (F)) Tin oxide) conductive film may be used, and the present invention is not limited thereto, and various types of conductive films may be used.

The heating thin film layer 110 generates heat on a two-dimensional plane, and there is no dead zone in which heating is not performed. In addition, since the heating thin film layer 110 can be manufactured using a vapor deposition method such as chemical vapor deposition, sputtering, pyrolysis, or spray method on the substrate 120, a separate layer between the substrate 120 and the heating thin film layer 110 No sintering process is required for bonding. In contrast, when a linear heating member such as a resistance pattern, a coil, a carbon fiber and a silicon fiber and a conductive fiber body is two-dimensionally arranged on a substrate, a region where the heating member exists and a region that does not exist exist. A dead zone occurs in the region where the heating member does not exist. Therefore, in the conventional linear heating member, a buried body or a surface coating body must be applied to overcome the temperature difference between the dead zone and the heating member, and usually these are made of heterogeneous materials, so the buried body or the A separate high-temperature sintering process is required to secure reliable bonding between the surface coating body and the heating member.

The heating thin film layer 110 is capable of instantaneous temperature rise and rapid cooling by contact with a gas, for example, ambient air or a gaseous refrigerant. For example, when comparing the calorific equation, that is, Q = cm△t, between the heating thin film layer 110 in a two-dimensional form (coating film) and an aluminum heating element in a three-dimensional form (meaning resistance wire), the same amount of heat Q is compared to the same area. When energized, the mass (m) of the heating thin film layer 110 is smaller than the mass (m) of the aluminum heating element, and the specific heat (c, tin/indium = 0.05) of the heating thin film layer 110 is the specific heat of the aluminum heating element (c: aluminum = 0.21), the temperature change (Δt) of the heating thin film layer 110 may be much larger than the temperature change (Δt) of the aluminum heating element based on the same amount of heat compared to the same area. As a result, the heating thin film layer 110 having a two-dimensional structure has an advantage of being able to instantaneously increase in temperature compared to a bulky conventional heating element having a three-dimensional structure, and to be cooled faster when exposed to a cooling gas.

The substrate 120 is an insulating substrate, and may include a material having a thermal expansion coefficient similar to that of the heating thin film layer 110. In one embodiment, the substrate 120 may be silicon nitride, or a mixture of silicon nitride and silicon carbide. The substrate of the silicon nitride or the substrate of a mixture of the silicon nitride and silicon carbide can be manufactured by a conventional ceramic sintering method of firing these powder materials. In one embodiment, the mixture of the silicon nitride and the silicon carbide has conductivity depending on the content of the silicon carbide, so the content of the silicon carbide is preferably 30% by weight or less based on the total weight of the substrate.

When the heating thin film layer 110 is a ceramic heating layer like the aforementioned FTO, the substrate formed of the silicon nitride or a mixture between the silicon nitride and the silicon carbide has an excellent matching rate in terms of thermal expansion coefficient with the heating thin film layer 110 Therefore, it is possible to prevent bending of the substrate 120 or detachment of the heating thin film layer 110 despite a temperature change. In particular, problems such as bending of the substrate 120 may be suppressed, uniform heat transfer may be performed by interviewing an object to be heated, and the life of the heating element 100 may be improved.

The substrate 120 may transfer heat generated from the heating thin film layer 110 formed on the rear surface to the front surface 120U, and at the same time, further improve the uniformity of heat dissipation in the plane direction. Since the heating thin film layer 110 having a predetermined thickness (for example, within 1 µm) is formed on the rear surface of the substrate 120, heat is received from the heating thin film layer 110 and, for example, by performing an interview with the semiconductor chip and pressing Bonding process can be performed. The heating thin film layer 110 may be formed entirely on the rear surface 120B of the substrate 120 as illustrated in FIG. 5A, or may be formed in an inner region excluding the edge region of the rear surface 120B. 5B shows that the heating thin film layer 110 is formed in an inner region of the rear surface 120B of the substrate 120 except for the assembly hole 102. Forming the heating thin film layer 110 on a partial region of the rear surface 120B of the substrate 120 is after forming a shadow mask, a mask on the rear surface 120B of the substrate 120, and depositing the heating thin film layer 110 It can be achieved through a lift-off method or an etching process by lithography.

An electrode body (130 of FIGS. 5A and 5B: for example, a conductive paste or a metal thin film) may be provided on both ends of the heating thin film layer 110. In order to form the electrode body 130 on the substrate 120, before coating the heating thin film layer 110, the lower surface of the substrate 120 is masked with the rest of the structure except for other structures such as the heating element assembly hole 102. , After coating the heating thin film layer 110 on the lower surface of the heat dissipation substrate 120, removing the masking from the lower surface of the heat dissipation substrate 120, on both ends of the heat dissipation substrate 120 on which the heating thin film layer 110 is formed The electrode body 130 may be formed.

The electrode body 130 may be electrically connected to power wiring. In one embodiment, the electrode body 130 may be supplied with power through a power washer 630 capable of implementing a stable and low resistance contact by making an interview with the electrode body 130. The power washer 630 may achieve electrical contact with the electrode body 130 in a manner that is compressed by fastening the substrate 120 and other structures such as the insulator 200.

Heating element assembly holes 102 for assembly with the insulator 200 may be formed at both ends of the substrate 120. Since the heating element assembly hole 102 is located on the same vertical line as the insulator assembly hole 102 of the insulator 200 to be described later, the fixing member 400 passes through the heating element assembly hole 102 and the insulator assembly hole 202. , The heating element 100 and the insulator 200 may be fixed to each other.

In the substrate 120, a temperature sensing sensor such as a thermocouple for calculating the temperature by measuring the electromotive force generated at the contact surface of dissimilar metals according to the temperature using the Seebeck effect or an infrared sensor that calculates temperature through wavelength analysis ( City) can be installed. In an embodiment, when the temperature sensor is a thermocouple, a sensor mounting hole 101 that can be mounted by inserting the thermocouple into one side of the substrate 120 may be formed.

6 is a perspective view showing the insulator 200 of the heater assembly according to an embodiment of the present invention.

Referring to FIG. 6, the insulator 200 may provide a space S through which gaseous refrigerant can be introduced. In one embodiment, the insulator 200 faces the heating thin film layer 110 of the heating element 100 so that a space S is formed between the heating thin film layer 110 of the heating element 100 and the upper surface of the insulator 200. It may be mounted under the heating element 100. In order to maintain the clearance with the heating thin film layer 110, a support protrusion 210 may be formed on the upper surface of the insulator 200 to protrude. The support protrusion 210 may include four support protrusions 210 that are spaced apart from each other in the upper corner of the insulator 200. Since the spaced space S is formed between the spaces spaced between the support protrusions 210, gaseous refrigerant may be introduced in the four directions (front, rear, left and right directions) of the insulator 200. The gaseous refrigerant may be ambient air. In another example, the gaseous refrigerant may be a cooling gas such as low temperature argon or nitrogen. The gaseous refrigerant may be supplied by exposing the spaced space S to the surroundings or through a port (not shown) coupled to the spaced space S.

In the insulator 200, a cooling hole 203 for guiding the gaseous refrigerant introduced through the spaced space S to the base unit 300 may be formed. The cooling holes 203 may be provided in a plurality formed on the center upper surface of the insulator 200. Each cooling hole 203 may suck air by the negative pressure generated from the base part 300 and guide it to the base part 300.

An insulator assembly hole 202 for fixing the heating element 100 may be formed in the insulator 200. The insulator assembly hole 202 may be configured as a pair located on both ends of the upper surface of the insulator 200, and the insulator assembly hole 202 has a fixing member passing through the heating element assembly hole 102 of the heating element 100 400 can be fixed. The insulator assembly hole 202 may have an inner diameter corresponding to an outer diameter of the fixing member 400, and a female thread for screwing with the fixing member 400 may be formed in the insulator assembly hole 202. In another embodiment, the fixing of the heating element 100 and the insulator 200 may be coupled by a coupler such as a clamp or fastening of a bolt/nut. To this end, suitable peripheral portions corresponding to each other may be formed on the outer peripheries of the heating element 100 and the insulator 200.

Here, since the power washer 630 connected to the wiring is inserted into the insulator assembly hole 202, the height of the insulator assembly hole 202 (the distance from the top of the insulator to the top of the insulator assembly hole) is the support protrusion 210 Is designed to be smaller than the height of (the distance from the top of the insulator to the top of the supporting protrusion).

The insulator 200 is located between the heating element 100 and the base part 300. The insulator 200 allows the heating thin film layer 110, which is a conductive film of the heating element 100, to be electrically insulated from the base 300. That is, since the substrate 110 is an insulating substrate, the heater assembly maintains electrical insulation from the object to be processed in contact with the process, and the insulator 200 is electrically connected to the base unit 300 connected to other external circuits or equipment. Maintain insulation.

An insulator fixing hole 204 into which the first fixing bolt 610 is inserted and an insulator through hole 205 into which a second fixing bolt (not shown) is inserted may be formed in the insulator 200. The first fixing bolt 610 may pass through the insulator fixing hole 204 and be coupled to the base fixing hole 304 of the base part 300, and the second fixing bolt may include the insulator through hole 205 and the base part. The heater assembly including the base part 300 may be fixed to the head receiving part of the bonding device which is a host device by penetrating through the base part through hole 305 of 300.

The insulator 200 may be manufactured with a plurality of pieces. In one embodiment, the insulator 200 includes a first plate 210 fixed to a lower portion of the heating element 100, a second plate 220 fixed to an upper portion of the base portion 300, and a first plate 210 It may include a third plate 230 connected between the and the second plate 220. These first plate 210, second plate 220, and third plate 230 may be configured as one block (insulator) through a fastening bolt (not shown).

In one embodiment, the support protrusion 210, the cooling hole 203, and the insulator assembly hole 202 may be formed in the first plate 210, and the insulator fixing hole 204 and the second plate 220 The insulator through hole 205 may be formed, and in the second plate 220 and the third plate 230, the cooling hole 203 of the first plate 210 and the gaseous refrigerant flow path 320 of the base unit 300 ) A connection passage (not shown) connecting between may be formed.

7 is a plan view showing the base portion 300 of the heater assembly according to an embodiment of the present invention, Figure 8 is an internal configuration diagram showing the base portion of the heater assembly 300 according to an embodiment of the present invention .

7 and 8, the base part 300 is a support block on which the insulator 200 is mounted, and the base part 300 may be assembled to a bonding device. For example, in the base part 300, the base part fixing hole 304 into which the first fixing bolt 610 is inserted for coupling with the insulator 200, and the base in which the second fixing bolt is inserted for coupling with the bonding device A secondary through hole 305 may be formed. The base portion fixing hole 304 and the base portion through hole 305 may be arranged in alignment with corresponding holes of the insulator on the edge portion of the base portion 300. When the insulator 200 and the base part 300 are coupled through the first fixing bolt 610 and the second fixing bolt, the gap between the insulator 200 and the base part 300 is airtight to prevent leakage of gaseous refrigerant. Can keep.

The base unit 300 may provide a negative pressure for inflow and circulation of the gaseous refrigerant. To this end, the base unit 300 may be provided with a main flow path 310 for guiding gas movement to generate a negative pressure, and a gaseous refrigerant flow path 320 communicating with the main flow path 310. The gaseous coolant passage 320 may have the same diameter as the main passage 320, but the present invention is not limited thereto, and the number of the gaseous coolant passage 320 may be one or more, and FIG. 7 shows 4 Four gaseous refrigerant passages are started.

When gas (air) moves at a high speed from the inlet 310a of the main flow path 310 to the outlet 310b from the main flow path 310, the main flow path 310 has a lower pressure (negative pressure) than the gas phase refrigerant flow path 320. It can be maintained, and due to the pressure difference between the main flow path 310 and the gaseous refrigerant flow path 320, the gas (eg, air) in the gaseous phase refrigerant flow path 320 is moved to the main flow path 310 and the main flow path 310 ) May be discharged through the outlet 310b. In this way, when a gas (air) flow occurs in the main flow path 310, when the velocity of the gas (air) in the main flow path 310 is generated (increased), the pressure in the main flow path 310 is a gaseous refrigerant flow path ( 320) Since it is lower than the internal pressure (Bernoulli's arrangement), the gaseous refrigerant flow path 320 allows the gaseous refrigerant to flow through the spaced space S, and the heating thin film layer 110 exposed to the flow of the gaseous refrigerant is introduced Rapid cooling or temperature rise can be suppressed by gaseous refrigerant. In one embodiment, in order to rapidly cool the heating thin film layer 110, the flow rate of gas flowing through the main flow path may be increased. When the heating thin film layer 110 maintains a constant temperature, power applied to the heating thin film layer 100 is The temperature of the heating thin film layer 110 can be reduced by controlling the temperature to help control the temperature.

The gaseous refrigerant passage 320 may be provided as four gaseous refrigerant passages 320 branching from one side and the other side of the main passage 310, and these four gaseous refrigerant passages 320 include four of the insulator 200. Each of the cooling holes 203 may be communicated. Accordingly, the air introduced through the spaced space (S) can be moved to the four gas phase refrigerant passages 320 through the four cooling holes 203 while being heated by the heat of the heating element 100, and The gaseous refrigerant moved to the refrigerant passage 320 may pass through the main passage 310 and be quickly discharged to the outlet 310b of the main passage 310. Through the rapid flow of the gaseous refrigerant, the heating element 100 can be rapidly cooled.

The fixing member 400 may pass through the heating element 100 and be fixed to the insulator 200. The fixing member 400 may pass through the heating element assembly hole 102 of the heating element 100 and then be fixed to the insulator assembly hole 202 of the insulator 200 through a power washer 630 connected to the electric wire. Since the fixing member 400 is provided in the form of a bolt made of a material having high thermal conductivity, it is possible to evenly transfer heat generated from the heating thin film layer 110 to the heating element 100 while fixing the heating element 100 to the insulator 200. .

The fixing member 400 may be configured as a pair installed on both ends of the heating element 100. Accordingly, the fixing member 400 may be firmly fixed to the insulator 200 at not only one end of the heating element 100 but also at the other end, and the heat generated from the heating thin film layer 110 is transferred to both ends of the heating element 100. Can be delivered evenly.

9 is an exploded perspective view of a heater assembly according to another embodiment of the present invention, FIG. 10 is a combined perspective view of a heater assembly according to another embodiment of the present invention, and FIG. 11 is viewed from a lower side according to another embodiment of the present invention. A perspective view showing a combination of a heater assembly, FIG. 12 is a plan view showing a base portion of a heater assembly according to another embodiment of the present invention, and FIG. 13 is an internal configuration diagram showing a base portion of a heater assembly according to another embodiment of the present invention. .

9 to 13, a heater assembly 10' according to another embodiment of the present invention provides a heating element 100 in which a heating thin film layer 110 is formed, and a space S in which air is introduced. The insulator 200 to perform, a base portion 300 ′ providing a cooling flow path to circulate air by negative pressure, and a fixing member 400 that evenly transfers heat from the heating thin film layer 110 to the heating element 100 Includes.

In one embodiment, the heating element 100 may include a heating thin film layer 110 that can be heated to a temperature for bonding of a chip, and a heat dissipating substrate 120 that generates heat by receiving heat from the heating thin film layer 110. . Here, the heating thin film layer 110 is a thin-film-type conductive film capable of instantaneous heat generation by resistance when power is applied, and the heating thin film layer 110 generates heat on a two-dimensional plane, so the rapid temperature of the instantaneous heat It is possible to rise, and rapid cooling by circulation of air is possible.

In addition, electrode bodies 130 may be provided on both ends of the heating thin film layer 110. Accordingly, when power is applied to the electrode body 130 through the power washer 630 to which the wire is connected, the heating thin film layer 110 may be instantaneously heated to a high temperature due to resistance generated by the electrode body 130 .

The heat dissipation substrate 120 is a heat conduction plate having excellent thermal conductivity, and since the heating thin film layer 110 of a predetermined thickness is formed on the lower surface of the heat dissipation substrate 120, heat is transferred from the heating thin film layer 110 to bond the chip. have. In this case, the heat dissipation substrate 120 may directly receive heat from the heating thin film layer 110 through surface contact, or may indirectly receive heat from the heating thin film layer 110 through the fixing member 400.

Heater assembly holes 102 for assembly with the insulator 200 may be formed at both ends of the heat dissipation substrate 120. Since the heating element assembly hole 102 is located on the same vertical line as the insulator assembly hole 202 to be described later, the fixing member 400 passes through the heating element assembly hole 102 and the insulator assembly hole 202, and the heating element 100 And the insulator 200 may be fixed to each other.

The heat dissipation substrate 120 may be equipped with a detection sensor for measuring temperature. To this end, a sensor mounting hole 101 in which a detection sensor is inserted and mountable may be formed at one side of the heat dissipation substrate 120.

The insulator 200 may provide a space S through which air can be introduced. For example, the insulator 200 may be mounted under the heating element 100 so that a space S is formed between the heating thin film layer 110 of the heating element 100 and the upper surface of the insulator 200. In order to maintain the clearance with the heating thin film layer 110, a support protrusion 210 may be formed on the upper surface of the insulator 200 to protrude. The support protrusions 210 may be formed of four spaced apart from the upper corners of the insulator 200. Since the spaced space S is formed in the space spaced apart between the support protrusions 210, air can be introduced in the four directions (front, rear, left and right directions) of the insulator 200.

A cooling hole 203 for guiding the air introduced through the spaced space S to the base portion 300 ′ may be formed in the insulator 200. The cooling holes 203 may be provided in a plurality formed on the center upper surface of the insulator 200. Each cooling hole 203 may suck air by the negative pressure generated from the base part 300 ′ and guide the air to the base part 300 ′.

An insulator assembly hole 202 for fixing the heating element 100 may be formed in the insulator 200. The insulator assembly hole 202 may be configured as a pair located on both ends of the upper surface of the insulator 200, and the insulator assembly hole 202 has a fixing member passing through the heating element assembly hole 102 of the heating element 100 400 can be fixed. The insulator assembly hole 202 has an inner diameter corresponding to an outer diameter of the fixing member 400, and a female thread for screwing with the fixing member 400 may be formed in the insulator assembly hole 202.

The insulator 200 may be fixed on the upper part of the base part 300 ′ so as to be positioned between the heating element 100 and the base part 300 ′. To this end, the insulator 200 may be formed with an insulator fixing hole 204 into which the first fixing bolt 610 is inserted and an insulator through hole 205 into which the second fixing bolt is inserted. The first fixing bolt 610 may pass through the insulator fixing hole 204 and be coupled to the base fixing hole 304 of the base part 300 ′, and the second fixing bolt may include the insulator through hole 205 and the base. The base part 300 ′ and the bonding device may be coupled together by penetrating the base part through hole 305 of the part 300 ′.

The base part 300 ′ is a support block on which the insulator 200 is mounted, and the base part 300 ′ may be assembled to a bonding device while the insulator 200 is mounted. For example, in the base part 300', the base part fixing hole 304 into which the first fixing bolt 610 is inserted for coupling with the insulator 200, and the second fixing bolt for coupling with the bonding device are inserted. The base through hole 305 may be formed. The base portion fixing hole 304 and the base portion through hole 305 may be formed of four pieces that are installed in parallel on the edge portion of the base portion 300 ′. When the insulator 200 and the base part 300 ′ are coupled through the first fixing bolt 610 and the second fixing bolt, the gap between the insulator 200 and the base part 300 ′ is used to prevent air leakage. It can be sealed.

The base unit 300 ′ may provide a negative pressure for circulation of air. To this end, the base unit 300 ′ includes a main flow path 310 guiding the movement of air to generate a negative pressure, and a gaseous refrigerant branched from the side of the main flow path 310 so as to have the same diameter as the main flow path 310. The flow path 320 may be provided. Since air is moved from the inlet 310a of the main flow path 310 to the outlet 310b in the main flow path 310, the main flow path 310 can maintain a lower pressure (negative pressure) than the gas phase refrigerant flow path 320, Due to the pressure difference between the main flow path 310 and the gaseous refrigerant flow path 320, air in the gaseous phase refrigerant flow path 320 may be moved to the main flow path 310 and discharged through the outlet 310b of the main flow path 310. have. As a result, the gaseous refrigerant flow path 320 may guide the air heated by the heating element 100 to the outside.

Here, the gaseous refrigerant passage 320 may be provided as four gaseous refrigerant passages 320 branching from one side and the other side of the main passage 310, and these four gaseous refrigerant passages 320 are formed of the insulator 200. Each of the four cooling holes 203 may be communicated. Accordingly, the air introduced through the spaced space (S) can be moved to the four gas phase refrigerant passages 320 through the four cooling holes 203 while being heated by the heat of the heating element 100, and Air moved to the refrigerant passage 320 may pass through the main passage 310 and be quickly discharged to the outlet 310b of the main passage 310. Through such a rapid flow of air, the heating element 100 may be rapidly cooled.

The base portion 300 ′ may be cooled through circulation of air. To this end, a main flow path 310 for guiding the movement of air at a constant speed for generating negative pressure, and a cooling flow path for guiding the gas (air) for cooling to the main flow path 310 may be provided. The inlet 310a and the outlet 310b of the main flow path 310 may be located on the front side and the rear side of the base part 300', respectively, and the inlet 310a and the outlet 310b of the main flow path 310 Through the gas (air) of a certain speed may enter and exit through the base portion 300 ′.

Since the cooling passage of the base part 300 ′ is developed in the lower and inner upper portions of the base part 300 ′, heat can be effectively transferred to the base part 300 ′. For example, the cooling passage includes a first cooling passage 331 receiving gas (air) for cooling through an inlet 330a of the cooling passage, and a base portion 300 ′ at the end of the first cooling passage 331. ), the second cooling passage 332 extending along the upper edge of the second cooling passage 332, the third cooling passage 333 extending downward from the end of the second cooling passage 332, and the end of the third cooling passage 333 A fourth cooling passage 334 extending on the lower surface of the base part 300' and a fifth cooling passage 335 extending from the end of the fourth cooling passage 334 to the main passage 310 and connected Can be.

Here, the diameter of the first cooling passage 331 may be designed to be larger than the diameter of the second cooling passage 332. Accordingly, the gas flowing into the first cooling passage 331 through the inlet 330a of the cooling passage moves to the second cooling passage 332, so that the speed of the gas may be increased. In particular, since the fourth cooling passage 334 extends in a zigzag shape on the lower surface of the base portion 300 ′ so that it is evenly unfolded on the lower surface of the base portion 300 ′, the gas moving the fourth cooling passage 334 The lower portion of the base portion 300 ′ may be cooled evenly as a whole.

For example, the gas for cooling the base portion 300 ′ flows into the first cooling passage 331 through the inlet 330a of the cooling passage, and then accelerates while moving to the second cooling passage 332 to accelerate the base portion ( 300'), while moving the fourth cooling passage 334 through the third cooling passage 333, and evenly cooling the lower portion of the base portion 300', the fifth cooling passage 335 ) Is moved to the main flow path 310 and discharged to the outlet 301b of the main flow path 310.

The fixing member 400 may pass through the heating element 100 and be fixed to the insulator 200. The fixing member 400 may pass through the heating element assembly hole 102 of the heating element 100 and then be fixed to the insulator assembly hole 202 of the insulator 200 through a power washer 630 connected to the electric wire. Since the fixing member 400 is provided in the form of a bolt made of a material having high thermal conductivity, it is possible to evenly transfer the heat generated from the heating thin film layer 110 to the heating element 100 while fixing the heating element 100 to the insulator 200. have.

14 is an exploded perspective view of a heater assembly according to another embodiment of the present invention, FIG. 15 is a combined perspective view of a heater assembly according to another embodiment of the present invention, and FIG. 16 is an exploded perspective view of a heater assembly according to another embodiment of the present invention. A plan view showing a base portion of a heater assembly, and FIG. 17 is an internal configuration diagram showing a base portion of a heater assembly according to another embodiment of the present invention.

14 to 17, a heater assembly 10" according to another embodiment of the present invention includes a heating element 100" in which a heating thin film layer 110 is formed, and a space S in which air is introduced. An insulator 200 that provides an insulator 200, a base portion 300 ″ providing a cooling flow path to circulate air by negative pressure, and a fixing member that evenly transfers heat from the heating thin film layer 110 to the heating element 100 ″ It includes 400 and a consumable pad 500 detachably mounted on the upper surface of the heating element 100".

In more detail, the heating element 100" may include a heating thin film layer 110 that can be heated to a temperature for bonding a chip. The heating thin film layer 110 can generate instantaneous heat by resistance when power is applied. As a thin-film-shaped conductive film, since heat is generated on a two-dimensional plane, it is possible to rapidly increase the temperature of the heat instantaneously, and to rapidly cool by circulating air.

The heating element 100" may include a heat dissipation substrate 120. The heat dissipation substrate 120 is a heat conduction plate having excellent thermal conductivity, and has a predetermined thickness (eg, 1) on the lower surface of the heat dissipation substrate 120. Since the heating thin film layer 110 of the micron meter) is formed, heat can be transferred from the heating thin film layer 110 to bond the chip. At this time, the heat dissipating substrate 120 is formed from the heating thin film layer 110 through surface contact. Heat may be directly transmitted or heat may be indirectly transmitted from the heating thin film layer 110 via the fixing member 400.

In addition, electrode bodies 120 (conductive paste) may be provided at both ends of the heating thin film layer 110, and heating element assembly holes 102 for assembly with the insulator 200 may be formed at both ends of the heat dissipation substrate 120. I can. Since the heating element assembly hole 102 is located on the same vertical line as the insulator assembly hole 202 to be described later, the fixing member 400 passes through the heating element assembly hole 102 and the insulator assembly hole 202, and the heating element 100" ) And the insulator 200 may be fixed to each other.

The heat dissipation substrate 120 may be equipped with a detection sensor for measuring temperature. To this end, a sensor mounting hole 101 in which a detection sensor is inserted and mountable may be formed at one side of the heat dissipation substrate 120.

The heat dissipation substrate 120 uses a suction hole 103 for attaching the consumable pad 500 to the upper surface of the heating element 100" by using the suction power of gas (air) and the discharge output of gas (air). A blowing hole 104 for separating the consumable pad 500 from the upper surface of the heating element 100" may be formed. The suction hole 103 communicates with the suction hole 206 of the insulator 200 to be described later, and the blowing hole 104 communicates with the discharge hole 207 of the insulator 200 to be described later. The suction hole 103 may be configured as a pair of spaced apart on the same line with the blowing hole 104 interposed therebetween.

The insulator 200 may provide a space S through which air can be introduced. For example, the insulator 200 may be mounted under the heating element 100 ″ so that a space S is formed between the heating thin film layer 110 of the heating element 100 ″ and the upper surface of the insulator 200. In order to maintain the clearance with the heating thin film layer 110, a support protrusion 210 may be formed on the upper surface of the insulator 200 to protrude.

A cooling hole 203 for guiding the air introduced through the spaced space S to the base portion 300" may be formed in the insulator 200. The cooling hole 203 is a central upper surface of the insulator 200. Each of the cooling holes 203 may be provided with a plurality of cooling holes 203 that may suck air by the negative pressure generated from the base part 300" and guide the air to the base part 300".

The insulator assembly hole 202 for fixing the heating element 100" may be formed in the insulator 200. The insulator assembly hole 202 is formed of a pair located on both ends of the upper surface of the insulator 200. In the insulator assembly hole 202, the fixing member 400 passing through the heating element assembly hole 102 of the heating element 100" may be fixed. The insulator assembly hole 202 has an inner diameter corresponding to an outer diameter of the fixing member 400, and a female thread for screwing with the fixing member 400 may be formed in the insulator assembly hole 202.

The insulator 200 may be formed with an insulator fixing hole 204 into which the first fixing bolt 610 is inserted and an insulator through hole 205 into which the second fixing bolt is inserted. The first fixing bolt 610 may pass through the insulator fixing hole 204 and be coupled to the base fixing hole 304 of the base part 300", and the second fixing bolt may include the insulator through hole 205 and the base. The base part 300" and the bonding device may be coupled together by passing through the base part through hole 305 of the part 300".

The insulator 200 includes a suction hole 206 for guiding air for attaching the consumable pad 500 to the upper surface of the heating element 100" and the consumable pad 500 for separating the consumable pad 500 from the upper surface of the heating element 100". A discharge hole 207 may be formed. Since the suction hole 206 is located on the same vertical line in the suction hole 103 of the heating element 100" and the suction flow path 340 of the base part 300", the suction hole 103 of the heating element 100" The air sucked through may be guided to the suction flow path 340 of the base part 300". Since the discharge hole 207 is located on the same vertical line in the blowing hole 104 of the heating element 100" and the discharge flow path 350 of the base part 300", the discharge flow path 350 of the base part 300" The air discharged from may be guided to the blowing hole 104 of the heating element 100".

The base part 300" is a support block on which the insulator 200 is mounted, and can be assembled to a bonding device while the insulator 200 is mounted on the base part 300". For example, in the base part 300", the base part fixing hole 304 into which the first fixing bolt 610 is inserted for coupling with the insulator 200, and the second fixing bolt for coupling with the bonding device are inserted. The base portion through hole 305 may be formed. The base portion fixing hole 304 and the base portion through hole 305 may be composed of four pieces that are installed parallel to the edge of the base portion 300". . When the insulator 200 and the base part 300" are coupled through the first fixing bolt 610 and the second fixing bolt, the gap between the insulator 200 and the base part 300" prevents air leakage. It can be sealed.

The base part 300" may provide a negative pressure for circulation of air. To this end, the base part 300" includes a main flow path 310 for guiding the movement of air to generate a negative pressure, and a main flow path. A gaseous refrigerant flow path 320 branching from the side of the main flow path 310 may be provided to have the same diameter as 310 ). At this time, since air moves from the inlet 310a of the main flow path 310 to the outlet 310b in the main flow path 310, the main flow path 310 can maintain a lower pressure (negative pressure) than the gas phase refrigerant flow path 320. In addition, due to the pressure difference between the main flow path 310 and the gaseous refrigerant flow path 320, the air in the gas phase refrigerant flow path 320 is moved to the main flow path 310 and discharged through the outlet 310b of the main flow path 310. Can be.

Here, the gaseous refrigerant passage 320 may be provided as four gaseous refrigerant passages 320 branching from one side and the other side of the main passage 310, and these four gaseous refrigerant passages 320 are formed of the insulator 200. Each of the four cooling holes 203 may be communicated. Accordingly, the air introduced through the separation space (S) may be moved to the four gaseous refrigerant flow paths 320 through the four cooling holes 203 while being heated by the heat of the heating element 100", The air moved to the gaseous refrigerant passage 320 may pass through the main passage 310 and be quickly discharged to the outlet 310b of the main passage 310.

The base part 300" may be cooled through circulation of air. To this end, the main flow path 310 guiding the movement of air at a constant speed for generating negative pressure, and the supply of gas (air) for cooling A cooling flow path for receiving and guiding the main flow path 310 may be provided.

Since the cooling passage of the base portion 300" is deployed on the inner lower and inner upper portions of the base portion 300", heat can be effectively transferred to the base portion 300". For example, the cooling passage is an inlet of the cooling passage. A first cooling flow path 331 that receives gas (air) for cooling through (330a), and a second cooling extending along the upper edge of the base portion 300" from the end of the first cooling flow path 331 The flow path 332, the third cooling flow passage 333 extending downward from the end of the second cooling flow passage 332, and extending from the end of the third cooling flow passage 333 on the lower surface of the base portion 300" The fourth cooling passage 334 may be configured with a fifth cooling passage 335 extending from the end of the fourth cooling passage 334 to the main passage 310 and connected.

Here, the diameter of the first cooling passage 331 may be designed to be larger than the diameter of the second cooling passage 332. As the gas introduced into the first cooling passage 331 through the inlet 330a of the cooling passage moves to the second cooling passage 332, the speed of the gas may be increased. In addition, since the fourth cooling channel 334 extends in a zigzag shape on the bottom surface of the base unit 300″ so that it is evenly distributed on the bottom surface of the base unit 300″, the gas moving the fourth cooling channel 334 is It is possible to evenly cool the lower portion of the portion 300".

For example, after the gas for cooling the base part 300" flows into the first cooling flow path 331 through the inlet 330a of the cooling flow path, it is accelerated while moving to the second cooling flow path 332 to accelerate the base part ( 300"), while moving the fourth cooling passage 334 through the third cooling passage 333, and evenly cooling the lower portion of the base portion 300", the fifth cooling passage 335 ) Is moved to the main flow path 310 and discharged to the outlet 301b of the main flow path 310.

In the base portion 300", the suction flow path 340 providing air for attaching the consumable pad 500 to the upper surface of the heating element 100" and the consumable pad 500 are separated from the upper surface of the heating element 100" A discharge flow path 350 may be provided to provide air for the purpose.

The suction flow path 340 of the base part 300" may attach the consumable pad 500 to the heating element 100" through suction of gas (air). The suction passage 340 includes a first suction passage 341 through which air is sucked through an outlet 340b of the suction passage 340, and a first suction passage 341 connected to an end of the first suction passage 341 and extending upwardly. 2 The suction flow path 342 and the third suction connected to the end of the second suction flow path 342 and exposed to the upper surface of the base portion 300" so that at least a portion thereof communicates with the suction hole 206 of the insulator 200 In this case, since the first suction passage 341 has a larger diameter than the second suction passage 342, the air is sucked from the inlet 340b of the suction passage 340. In this case, gas may be sucked in the second suction passage 342 at a faster rate than the first suction passage 341.

Accordingly, when air is rotted at the outlet 340b of the suction flow path 340, the air through the suction flow path 340, the suction hole 206 of the insulator 200, and the suction hole 103 of the heating element 100" Is sucked, the consumable pad 500 may be attached to the heating element 100" through the suction hole 103 of the heating element 100". In this case, blowing of air through the discharge passage 350 is in a stopped state. Keep.

The discharge flow path 350 of the base part 300" may separate the consumable pad 500 from the heating element 100" through air discharge (blowing). The discharge passage 350 includes a first discharge passage 351 receiving air for discharge through an inlet 350a of the discharge passage 350, and a first cooling passage to be exposed from the upper surface of the base portion 300". The second discharge passage 352 extending along the upper edge of the base portion 300" at the end of 331 and extending downwardly from the end of the second cooling passage 332 to be connected to the main passage 310 It may be configured as a third discharge passage 353. Here, since the first discharge passage 351 has a larger diameter than the second discharge passage 352, the gas flowing into the first discharge passage 351 through the inlet 350a of the discharge passage 350 is removed. 2 As it moves to the discharge passage 352, the speed of the gas may increase.

Therefore, when air is blown from the inlet 350b of the discharge flow path 350, the air flows through the discharge flow path 350, the discharge hole 207 of the insulator 200, and the blowing hole 104 of the heating element 100". Since it is blown, the consumable pad 500 can be separated from the heating element 100 ″ through the blowing hole 104 of the heating element 100 ″. At this time, the rest that is not discharged through the discharge hole 207 of the insulator 200 Air can be smoothly discharged through the main flow path 310. And the rotation of air through the suction flow path 340 is maintained in a stopped state.

The consumable pad 500 is a ceramic pad having excellent heat transfer ability, and is located between the heating element 100" and the chip when the chip is bonded through the bonding device, so that direct damage between the heating element 100" and the chip is prevented, and impact Bonding device and chip can be protected from

The consumable pad 500 is detachable from the heating element 100", so that it is possible to quickly replace the parts in which heat deformation and damage occur frequently. In this embodiment, the consumable pad 500 is a heating element ( It may be attached to the heating element 100 ″ through the suction hole 103 provided in (100 ″) or separated from the heating element 100 ″ through the blowing hole 104. Of course, the consumable pad 500 is not limited thereto, and the consumable pad 500 may be attached to and detached from the heating element 100" through various coupling methods. For example, the consumable pad 500 is a heating element 100" using a clip. It can be attached to or detached from the top surface.

In the case of rapid temperature increase on the heating thin film layer 110, a temperature difference of approximately 100° C. may occur between the central portion and the end (the edge region where the electrode body 130 is formed) of the heating thin film layer 110. For example, when the temperature is raised, the temperature of the central portion of the heating thin film layer 110 is about 391° C., whereas the temperature of the end of the heating thin film layer 110 is approximately 289° C. to 303° C., and due to this uneven heating phenomenon, the central portion of the heating thin film layer 110 May be damaged. To prevent this from happening, the heating thin film layer 110 in an embodiment of the present invention may be formed in a multistage pattern (or in the form of a multilayer) as shown in FIG. 18A below.

18 shows a heating thin film layer 110 according to an embodiment of the present invention.

Referring to FIG. 18, the heating thin film layer 110 is formed on the third sub thin film layer S3, the second sub thin film layer S2, and the second sub thin film layer S2 formed on the third sub thin film layer S3. It may include a first sub thin film layer (S1). In the present invention, the first sub-thin layer (S1), the second sub-thin layer (S2), and the third sub-thin layer (S3) may have different sizes. For example, the first sub-thin film layer S1 has a smaller length in the x direction (the direction opposite to the electrode body 130 and is the direction in which the driving current flows) than the second sub-thin film layer S2, and the second sub-thin film layer S2 Silver may have a smaller length in the x direction than the third sub-thin film layer S3. At this time, the lengths of the first sub-thin layer (S1), the second sub-thin-film layer (S2), and the third sub-thin-film layer (S3) in the y direction (which are vertical directions in the direction in which the driving current flows) may have the same or different lengths. have. Similarly, the lengths (or thicknesses) of the z-axis of the first sub-thin layer S1, the second sub-thin layer S2, and the third sub-thin layer S3 may have the same or different lengths. In addition, the materials of the first sub-thin layer (S1), the second sub-thin layer (S2), and the third sub-thin layer (S3) may include ceramics such as fluorine-doped tin oxide having the aforementioned resistance component, and these sub The thin film layers S1 to S3 may be formed of the same material or may include different types of ceramic materials.

When the second sub thin film layer S2 and the first sub thin film layer S1 are stacked on the third sub thin film layer S3 based on the center of the third sub thin film layer S3, the central portion of the heating thin film layer 110 Is thickened, and the left and right sides of the heating thin film layer 110 may be relatively thin. In addition, when the center of the heating thin film layer 110 becomes thick, the resistance value at the center portion is lowered, and both ends of the heating thin film layer 110 in the x direction are thin, so that the resistance value is relatively larger than that of the center portion.

When electric power of a constant current is applied to the heating thin film layer 110, the amount of heat generated in the central portion P1 of the heating thin film layer 110 decreases due to low resistance, and the left and right sides of the heating thin film layer 110 have a high resistance. May be larger than P1). Therefore, the difference in the heating temperature for each region of the heating thin film layer 110 due to the difference in resistance is caused by the effect that the amount of heat generated at the both ends is diffused to the central part P1 where the temperature is relatively low. It is possible to ensure temperature uniformity over the period. In addition, as the sub-thin film layer is further subdivided, the calorific value can be more evenly distributed. The embodiment shown in FIG. 18 illustrates three sub-thin layers, but the present invention is not limited thereto. In order to ensure uniformity of temperature rise in consideration of resistance and heat dissipation effect, the size and number of the sub thin-film layers may be determined. For example, the heating thin film layer 110 may have a stacked structure of sub-thin layers of two tiers or multi-stage sub-thin layers of four or more tiers.

19A and 19B are images showing the temperature distribution of the heating thin film layer 110 including multi-stage sub-thin layers according to an embodiment of the present invention. 19A is an image showing the temperature distribution of the heating thin film layer 110 having a structure in which three sub-thin layers are stacked, and 19B is an image showing the temperature distribution of the heating thin film layer 110 having a structure in which four sub-thin films are stacked. It is an image.

19A and 19B, the temperature difference between the central portion P1 and the end P2 of the heating thin film layer 110 having a structure in which three sub-thin layers are stacked is approximately 40° C. In comparison, the temperature deviation was reduced. The temperature difference between the central portion P1 and the end portion P2 of the heating thin film layer 110 having a structure in which four sub-thin layers are stacked is approximately 5.3° C., further reducing the temperature variation.

The heating thin film layer 110 according to an embodiment of the present invention may further include a diffusion barrier layer thereon. When the heating thin film layer is an FTO conductive film, when it is heated to a high temperature of about 200° C. or higher, the microstructure of the thin film may change due to the influence of a high voltage, or a change in the oxidation state of the film may occur. In this way, when the process of heating or cooling the FTO conductive film is repeated to accumulate defects or microstructure changes due to atomic movement, deterioration may occur on the surface of the FTO conductive film, and defects such as cracks may occur. . Therefore, the defect may cause the stability and durability of the thin film heating element to deteriorate.

In an embodiment of the present invention, a diffusion barrier layer (not shown) may be further formed on the heating thin film layer 110 to minimize such defects. Since the diffusion barrier layer prevents atomic movement or volatilization of tin and/or fluorine in the heating thin film layer 110 and deterioration of the surface of the heating thin film layer 110 can be prevented, a heating structure with improved stability and durability can be provided. have. In addition, the diffusion barrier layer covers the heating thin film layer 110 to prevent gas molecules in the atmosphere such as oxygen, moisture, methane gas, oxidizing gas, or reducing gas from penetrating into the heating thin film layer 110.

20 is a graph of temperature change of the heating thin film layer 110 over time when a constant voltage power is applied when a silicon oxide diffusion barrier layer is formed according to an exemplary embodiment of the present invention.

Referring to FIG. 20, not only at 25 V, but also when high constant voltage power of 50 V and 60 V is applied, durability of the heating thin film layer 110 is maintained without cracks or cracks in the heating thin film layer 110, and the heating temperature is constant. It can be confirmed that it is maintained. This is presumed to be because the diffusion barrier layer formed on the above-described heating thin film layer 110 prevents deterioration of the surface of the heating thin film layer 110 even in a high constant voltage driving region.

When the heating element according to an embodiment of the present invention is actually used, defects related to life may occur mainly in the heating thin film layer. Since the heating thin film layer 110 is formed separately on the substrate 120, the heating thin film layer 110 is simply removed through chemical etching or physical polishing, and the heating thin film layer 110 is again formed on the exposed surface of the substrate 120. ), the heating body can be regenerated. The advantage of the present invention is to have excellent economic efficiency compared to a conventional heating body manufactured by sintering by compounding different materials such as pattern electrodes.

For uniform heat transfer to the object to be processed in the semiconductor manufacturing process by the heating element using the heating thin film layer, the contact interface between the surface of the heating element and the surface of the object to be processed is the entire area during high-speed heating or high-speed cooling of the heating element (see 100 in Fig. 1). It must be maintained throughout, and for this purpose, the heating element must not undergo thermal deformation. The inventors have confirmed that such thermal deformation is caused by a difference in coefficient of thermal expansion between the substrate 120 and the heating thin film layer 110. Due to the difference in the coefficient of thermal expansion between the substrate 120 and the heating thin film layer 110, the heating element 100 may be concavely or convexly deformed based on the surface of the object to be processed during high-speed heating or high-speed cooling. In case of contact with the body, there may be a problem that uniform heat transfer over the entire area cannot be performed. In addition, the difference in the coefficient of thermal expansion may cause a phenomenon in which the heating thin film layer 110 is peeled off from the substrate 120, thereby shortening the life of the heating element 100. Particularly, in order to apply a heating layer as a precision heater of a thermal compression bonding device (TCB) for semiconductor manufacturing, improvement thereof is required.

According to an embodiment of the present invention, the substrate 120 is made of a ceramic material with respect to the ceramic heating thin film layer 110, but the material composition of the substrate 120 is adjusted. In one embodiment, the substrate 120 may include silicon nitride, which is an insulator, as a main constituent material. However, silicon nitride has a lower coefficient of thermal expansion than the heating thin film layer, which is a metal oxide. In order to match the thermal expansion coefficient of the substrate 120 made of the silicon nitride and the thermal expansion coefficient of the heating thin film layer 110, the thermal expansion coefficient is higher than that of the heating thin film layer, a ceramic material such as titanium nitride (TiN ) Can be mixed. That is, the substrate 120 according to the embodiment of the present invention uses a ceramic material having excellent electrical insulation properties as a main substrate material, even though the coefficient of thermal expansion is low, and mainly contains metal oxide, and thus has a higher coefficient of thermal expansion than the main substrate material. In order to match the difference in the coefficient of thermal expansion between the heating thin film layer 110 and the substrate 120, an additional ceramic material having a high coefficient of thermal expansion may be mixed. Accordingly, a substrate of a mixed composition comprising a main substrate material and an additional ceramic material can have a coefficient of thermal expansion linearly proportional to the relative mixing ratio of these materials according to a rule of mixture.

In an embodiment, in order to match the coefficient of thermal expansion with the FTO heating thin film layer, the substrate of the mixed composition may have a mixed composition of silicon nitride and titanium nitride. In one embodiment, the substrate 120 may be formed by mixing silicon nitride powder and titanium nitride powder to form a slurry, and then sintering the slurry. In this case, since the titanium nitride material itself has conductivity, the titanium oxide must be mixed in an amount of less than 30% by weight based on the total weight of the mixed powder to maintain the insulating properties required as the substrate 120.

21 is a graph showing a performance temperature profile of a heater assembly according to an embodiment of the present invention.

Referring to FIG. 21, the heater assembly is a heating characteristic of a heating element including a substrate made of a mixed powder of silicon nitride (80% by weight) and titanium oxide (20% by weight) with respect to the FTO heating thin film layer. The heating element may be controlled in an operating temperature range of about 100° C. to 400° C. For example, the temperature can be controlled to have a temperature increase rate of 200° C. to 400° C. per second and a cooling rate of 200° C. to 400° C. per second, and maintain stable performance without deformation and cracks during operation.

Accordingly, the heater assembly including the heating thin film layer 110 according to various embodiments of the present invention is not only advantageous for rapid heating and rapid cooling, but also has a uniform heat distribution and a regenerative advantage due to separate formation.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical spirit of the present invention. It will be obvious to those who have the knowledge of.

100: heating element 101: sensor mounting hole
102: heating element assembly hole 103: suction hole
104: blowing hole 110: heating thin film layer
130: electrode body 200: insulator
202: insulator assembly hole 203: cooling hole
204: insulator fixing hole 205: insulator through hole
300: base part 304: base part fixing hole
305: base portion through hole 310: main flow path
320: air flow path 331: first cooling flow path
332: second cooling passage 333: third cooling passage
341: suction flow path 342: discharge flow path
400: Fixing member 500: Consumable pad

Claims (21)

As a heater assembly mounted on a semiconductor chip bonding device,
A heating element having a heating thin film layer formed on the rear surface thereof;
A consumable pad detachably mounted on the upper surface of the heating element;
An insulator mounted under the heating element so that a spaced space through which air can be introduced is formed between the heating thin film layer; And
Heater assembly comprising a base portion to which the insulator is fixedly installed. The method of claim 1,
Heater assembly, characterized in that the heater assembly further comprises a fixing member fixed to the insulator through the power washer through the heating element so that heat of the heating thin film layer is evenly transmitted to the heating element. delete The method of claim 1,
The base part
A heater assembly, characterized in that to provide a negative pressure for circulation of the air introduced through the spaced space. The method of claim 1,
In the base part
A heater assembly, comprising: a main flow path guiding the movement of gas for generating a negative pressure; and an air flow path branching from a side portion of the main flow path and extending upwardly of the base portion. The method of claim 5,
The air flow path is
Heater assembly, characterized in that provided in a plurality of branches branching from one side and the other side of the main flow path. As a heater assembly mounted on a semiconductor chip bonding device,
A heating element having a heating thin film layer formed on the rear surface thereof;
An insulator mounted under the heating element so that a spaced space through which air can be introduced is formed between the heating thin film layer; And
It includes a base portion to which the insulator is fixedly installed,
In the base part
A main flow path guiding the movement of gas for generating negative pressure, a first cooling flow path through which a gas for cooling is supplied, a second cooling flow path extending from an end of the first cooling flow path along an upper edge of the base portion; , A third cooling passage extending downward from an end of the second cooling passage, a fourth cooling passage extending from an end of the third cooling passage on a lower surface of the base portion, and the main at an end of the fourth cooling passage. Heater assembly, characterized in that the fifth cooling passage extending to the passage is provided. The method of claim 7,
The first cooling passage is
Heater assembly, characterized in that extending in a zigzag shape on the lower surface of the base portion. The method of claim 1,
In the base part
A heater assembly, comprising: a suction passage for providing gas for attaching the consumable pad to the upper surface of the heating element, and a discharge passage for providing gas for separating the consumable pad from the upper surface of the heating element. The method of claim 9,
In the base part
A main flow path is provided for guiding the movement of gas to generate negative pressure,
The discharge passage is a heater assembly, characterized in that branching from the upper side of the main passage so as to have a diameter smaller than the main passage. The method of claim 1,
In the base part
Heater assembly, characterized in that a base portion fixing hole through which the first fixing bolt penetrating through the insulator is fixed, and a base through hole through which the second fixing bolt penetrating through the insulator penetrates for assembly with a bonding device. . As a heater assembly mounted on a semiconductor chip bonding device,
A heating element having a heating thin film layer formed on the rear surface thereof;
An insulator mounted under the heating element so that a spaced space through which air can be introduced is formed between the heating thin film layer; And
It includes a base portion to which the insulator is fixedly installed,
The insulator is
A first plate provided with a support protrusion for forming the spaced space;
A second plate fixed to an upper portion of the base portion; And
And a third plate connected between the first plate and the second plate. The method of claim 1,
In the insulator
And a suction hole for guiding gas for attaching the consumable pad to the upper surface of the heating element, and a discharge hole for guiding gas for separating the consumable pad from the upper surface of the heating element. The method of claim 1,
In the insulator
A heater assembly, characterized in that a cooling hole is formed to guide the air introduced through the spaced space to the base part. The method of claim 2,
In the insulator
Heater assembly, characterized in that the insulator assembly hole is formed in which the fixing member passing through the heating element is inserted. The method of claim 15,
The height of the insulator assembly hole is
Heater assembly, characterized in that it is designed to be lower than the height of the support protrusion for forming the spaced space so that the power washer supplying power to the heating element is fixed to the insulator assembly hole via a fixing member. The method of claim 1,
In the heating element
Heater assembly, characterized in that the electrode bodies for providing different electrodes are located on both sides. The method of claim 17,
In the heating element
Heater assembly, characterized in that the power washer for supplying power to the electrode body is connected. The method of claim 1,
In the heating element
Heater assembly, characterized in that equipped with a detection sensor for measuring temperature. The method of claim 1,
In the heating element
A heater assembly, characterized in that a suction hole for attaching a consumable pad to an upper surface of the heating element using a suction force of gas, and a blowing hole for separating the consumable pad on an upper surface of the heating element using a discharge power of gas are formed. The method of claim 20,
The suction hole
Heater assembly, characterized in that provided in a plurality of spaced apart on the same line with the blowing hole therebetween.

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