KR102122526B1 - Mask for forming organic insulation layer of protective layer and manufacturing method of organic light emitting display device - Google Patents

Abstract

In one embodiment of the present application, in a mask for forming an organic insulating layer corresponding to a front surface of a light emitting array including a plurality of organic light emitting elements corresponding to a plurality of pixel areas, corresponding to the front surface of the light emitting array, the organic A transmissive portion through which the insulating material passes; An outer support supporting the permeable portion; And it is formed on at least one side of the edge of the transmission portion adjacent to the outer support, and provides a mask comprising a raised portion for passing the organic insulating material less than the transmission portion.

Description

Mask for forming organic insulating layer of protective layer and method for manufacturing organic light emitting display device using the same{MASK FOR FORMING ORGANIC INSULATION LAYER OF PROTECTIVE LAYER AND MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DISPLAY DEVICE}

The present invention relates to a mask for forming an organic insulating layer provided as part of a protective layer that prevents moisture and oxygen infiltration toward an organic light emitting material from an organic light emitting display device and a method of manufacturing the organic light emitting display device using the same.

With the advent of the full-fledged information age, the display field for visually displaying electrical information signals is rapidly developing. Accordingly, research is being conducted to develop performance of thinning, lightening, and low power consumption for various flat display devices.

Typical examples of such a flat panel display device are a liquid crystal display device (LCD), a plasma display panel device (PDP), a field emission display device (FED), and an electroluminescent display device. (Electro Luminescence Display device: ELD), Electro-Wetting Display device (EWD), and Organic Light Emitting Display device (OLED). These flat panel display devices commonly include a flat panel display panel for realizing an image.

These flat panel display devices commonly include a flat panel display panel for realizing an image. The flat panel display panel is a structure in which a pair of substrates having a unique luminescent material or a polarizing material interposed therebetween, and includes a display area in which a display area and a non-display area outside thereof are defined. The display area is defined as a plurality of pixel areas.

Among them, the organic light emitting display device (OLED) displays an image using an organic light emitting device that is a self-emission type element. That is, the organic light emitting display device includes a plurality of organic light emitting elements corresponding to a plurality of pixel areas. The organic light emitting device includes first and second electrodes facing each other, and an organic light emitting layer formed of an organic light emitting material between the first and second electrodes, and emits light according to driving current between the first and second electrodes Device.

A typical organic light emitting display device includes a thin film transistor array substrate including a plurality of thin film transistors formed to correspond to a plurality of pixel regions, and a light emitting array including a plurality of organic light emitting elements formed to correspond to a plurality of pixel regions on a thin film transistor array substrate. And a sealing structure that is oppositely bonded to the thin film transistor array substrate with the light emitting array interposed therebetween. Here, the sealing structure includes a sealing layer that is opposed to the thin film transistor array substrate and a protective layer formed between the light emitting array and the sealing layer.

The protective layer is for delaying deterioration of life and reliability of the device by shielding oxygen and moisture from penetrating into the organic light emitting layer of each of the plurality of organic light emitting elements. The protective layer is a multi-layer structure including two or more insulating layers each formed of an organic insulating material or an inorganic insulating material of different components or thickness.

In particular, since the protective layer must be formed to a thickness sufficient to compensate for foreign matter on the light emitting array, that is, a thickness such that the shape of the foreign matter is not transferred, an insulating layer of an inorganic insulating material (hereinafter referred to as "inorganic layer"). It essentially includes an insulating layer of an organic insulating material (hereinafter referred to as "organic layer") that can be more easily formed into a thicker thickness. As an example, the protective layer may be formed of a multi-layer structure of a first inorganic layer/organic layer/second inorganic layer, and hereinafter, the protective layer is a multi-layer structure of a first inorganic layer/organic layer/second inorganic layer. Let's listen and explain.

On the other hand, since the protective layer is formed to cover the entire surface on the light emitting array, it is generally formed using an open mask including a transmissive portion corresponding to the front surface of the light emitting array.

1A is a process diagram showing a process of forming a protective layer, FIG. 1B is a plan view showing a general open mask used when forming a protective layer, and FIG. 1C shows a protective layer formed on a light emitting array using the open mask of FIG. 1B It is a cross section.

As shown in FIG. 1A, the protective layer is provided with a thin film transistor array substrate 11 and a light emitting array 12, and then, with the open mask 20 arranged on the light emitting array 12, an inorganic insulating material, By laminating in order of the organic insulating material and the inorganic insulating material, the first inorganic layer/organic layer/second inorganic layer may be formed in a multi-layer structure.

As shown in FIG. 1B, the general open mask 20 includes a transmissive portion 21 corresponding to the front surface of the light emitting array and an outer support 22 supporting it.

Accordingly, as shown in FIG. 1C, the protective layer 13 including the first inorganic layer 13a, the organic layer 13b, and the second inorganic layer 13c sequentially stacked on the entire surface of the light emitting array 12 is formed. Is formed.

However, the organic layer is formed thicker than the inorganic layer, and is formed of an organic insulating material having a higher cohesive force than the inorganic insulating material.

Accordingly, when the organic layer 13b is formed using a general open mask, the middle region is uniformly formed with a predetermined thickness, while at least a portion of the predetermined width RW among the edge regions on one side (hereinafter referred to as "edge rising region") There is a problem in that the organic layer is formed in a form that rises thicker and higher than the middle region (hereinafter referred to as "edge rising form").

That is, the center region of the organic layer is formed uniformly with a predetermined thickness, since the adhesive force with the lower formation surface is generated in all directions and is less affected by cohesive force, while the edge raised region (RW) of the organic layer is formed lower in position Since the adhesive force with the surface cannot be generated in all directions, it is more affected by cohesive force, so it is formed thicker and convex than the middle region.

The raised shape of the organic layer 13b is transferred to the second inorganic layer 13c formed on the organic layer 13b, and as a result, the surface of the protective layer 13, that is, the upper surface of the second inorganic layer 13c The silver edge has a convex edge raised shape.

The shape of the raised edge of the protective layer 13 has a degree of visibility that allows a user to feel the edge of the display area brighter than others, and is thus considered as a factor that degrades the quality of the device.

The present application is to provide a mask for forming an organic insulating layer that can prevent the protective layer from being formed in the form of a raised edge, and a method of manufacturing the organic light emitting display device using the same.

In order to solve such a problem, the present application is a mask for forming an organic insulating layer corresponding to a front surface on a light emitting array including a plurality of organic light emitting elements corresponding to a plurality of pixel regions, corresponding to the front surface of the light emitting array By doing so, the transmission portion for passing the organic insulating material; An outer support supporting the permeable portion; And it is formed on at least one side of the edge of the transmission portion adjacent to the outer support, and provides a mask comprising a raised portion for passing the organic insulating material less than the transmission portion.

Here, the raised portion has a plurality of blocking patterns for shielding the organic insulating material are arranged along at least one side of the perimeter of the transmissive portion, the wider the adjacent the outer support, and the smaller the closer the center of the transmissive portion. Form.

In addition, the present application is a thin film transistor array substrate including a plurality of thin film transistors formed corresponding to a plurality of pixel regions on a substrate, and a plurality of organic light emitting elements formed corresponding to the plurality of pixel regions on the thin film transistor array substrate. Providing a light emitting array including; Forming an organic insulating layer on the light emitting array using a mask; And forming a sealing layer that is oppositely bonded to the thin film transistor array substrate with the light emitting array interposed therebetween.

At this time, in the step of forming the organic insulating layer, the mask corresponds to the entire surface of the light emitting array, the transmitting portion for passing the organic insulating material; An outer support supporting the permeable portion; And it is formed on at least one side of the edge of the permeable portion adjacent to the outer support, and includes a raised portion for passing the organic insulating material less than the permeable portion.

The rising prevention portion has a shape in which a plurality of blocking patterns that shield the organic insulating material are arranged along at least one side of the edge of the transmitting portion, and each blocking pattern is wider as it is adjacent to the outer support and smaller as it is adjacent to the center of the transmitting portion. It has a width.

The mask for forming an organic insulating layer according to an embodiment of the present application includes a raised portion formed on at least one side of an edge of the transmissive portion and passing an organic insulating material in a smaller amount than the transmissive portion.

When the organic insulating layer is formed by using such a mask, the amount of the organic insulating material applied to the edge region of the organic insulating layer by the raised portion is smaller than the middle region, so that the effect of cohesion between the organic insulating materials is reduced. Since it is possible, it can be prevented that the organic insulating layer is formed in the form of raised edges.

Therefore, deterioration of the quality of the organic light emitting display device due to the raised shape of the edge of the organic insulating layer can be prevented.

1A is a process diagram showing a process of forming a protective layer.
1B is a plan view showing a typical open mask used when forming a protective layer.
1C is a cross-sectional view showing a protective layer formed on the light emitting array using the open mask of FIG. 1B.
2 is a plan view showing a mask for forming an organic insulating layer according to an embodiment of the present application.
3 is a plan view showing part A of FIG. 2.
FIG. 4 is a plan view showing part B of FIG. 3.
5A to 5C are plan views illustrating another example of a blocking pattern according to an embodiment of the present application.
6A to 6D are plan views illustrating another example of a raised portion according to an embodiment of the present application.
7 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present application.
8A is a process diagram showing a step (S110) of preparing the thin film transistor array substrate and the light emitting array of FIG. 7, FIG. 8B is an equivalent circuit diagram showing the thin film transistor array substrate and the light emitting array, and FIG. 8C is a thin film for each pixel area It is a cross-sectional view showing an example of a transistor array substrate and a light emitting array.
9A to 9F are process diagrams showing steps S120 and S130 after step S110 shown in FIG. 7.

Hereinafter, a mask for forming an organic insulating layer of a protective layer according to each embodiment of the present application and a method of manufacturing the organic light emitting display device using the same will be described in detail with reference to the accompanying drawings.

First, with reference to FIGS. 2 to 4, 5A to 5C, and 6A to 6D, a mask for forming an organic insulating layer according to one embodiment of the present application and other embodiments will be described.

2 is a plan view showing a mask for forming an organic insulating layer according to an embodiment of the present application, FIG. 3 is a plan view showing part A of FIG. 2, and FIG. 4 is a plan view showing part B of FIG. 3. 5A to 5C are plan views illustrating another example of a blocking pattern according to an embodiment of the present application. In addition, FIGS. 6A to 6D are plan views illustrating another example of a raised portion according to an exemplary embodiment of the present application.

As shown in FIG. 2, the mask 100 for forming an organic insulating layer according to an embodiment of the present application corresponds to an organic insulating layer corresponding to a front surface of a light emitting array including a plurality of organic light emitting elements corresponding to a plurality of pixel regions For forming the, at least one side of the edge of the transmissive portion 110 for passing the organic insulating material corresponding to the front surface of the light emitting array, the outer support 120 for supporting the transmissive portion 110, and the permeable portion 110 adjacent to the outer support It is formed on and includes a raised portion 130 for passing the organic insulating material less than the transmission portion (110).

Although not shown in detail in FIG. 2, the transmissive portion 110 may be a fully opened pattern or a mesh pattern such as a body network.

The rise prevention unit 130 may be formed on only one side of the edge of the transmissive portion 110, or may be formed on both sides (for example, left and right, or upper and lower sides) facing each other among the edges of the transmissive portion 110. have.

Alternatively, as shown in FIG. 2, the raised portion 130 may be formed to surround the entire edge of the transparent portion 110, that is, the transparent portion 110.

As shown in FIG. 3, the rise prevention unit 130 has a form in which a plurality of blocking patterns 131 for shielding the organic insulating material are arranged along at least one side of the edge of the transmission unit 110.

At this time, the raised portion 130 may be formed on the edge of the edge of the transparent portion 110, that is, the raised portion 130 includes two sides that contact at any one edge of the edge of the transparent portion 110 It may be in the form arranged in the region.

In this case, the blocking patterns are arranged along the upper and lower sides of the edges of the transmissive part 110, and the blocking patterns arranged along the left and right of the edges of the transmissive part 110 are blocking patterns arranged along the upper and lower sides. And are spaced so as not to overlap. This is because the raised edge of the organic insulating layer occurs more frequently on the upper and lower edges than the left and right edges.

As illustrated in FIG. 4, each blocking pattern 131 is wider as it is adjacent to the outer supporter 120 and has a smaller width as it is adjacent to the center of the transmissive portion 110.

For example, as illustrated in FIG. 4, the blocking pattern 131 may be a pointed polygon.

That is, the blocking pattern 131 may be a polygon including at least three sides SD1, SD2, and SD3 and at least three vertices that are contact points between them.

In addition, the blocking pattern 131 is jointed based on the water line RL passing through the other third side SD3 at the vertex AP where the first and second sides SD1 and SD2 meet among at least three sides. It can be a polygon. At this time, the third side SD3 is a line segment that abuts the outer support 130. For example, the blocking pattern 131 may be an isosceles triangle.

The raised portion 130 is to prevent the organic insulating layer from being formed in an edge raised shape, that is, to form the organic insulating layer as a whole.

Accordingly, in some areas where the anti-rising portion 130 is disposed among the transparent portions 110, the area ratio of the anti-rising portion 130 to the transparent portion 110 satisfies 0.7 to 1.3.

This, if the area ratio of the raised portion 130 is less than 0.7, there is a disadvantage that the organic insulating layer can be formed in the form of raised edges regardless of the presence or absence of the raised portion 130, of the raised portion 130 If the area ratio exceeds 1.3, it is because there is a disadvantage that the uncoated region of the organic insulating material by the raised portion 130 may be generated.

In addition, the width of the area where the raised portion 130 is disposed among the edges of the transmissive portion 110, that is, the height PH of the blocking pattern 131, when using a general open mask (20 in FIGS. 1A and 1B). The width of the edge raised region (RW in FIG. 1C) of the organic insulating layer (13b in FIG. 1C) formed in the form of edge raised is more than 1/2 times, and 1.5 times the width of the edge raised region (RW in FIG. 1C) to be. That is, the height PH of the blocking pattern 131 satisfies the range of RW/2 to RW*1.5.

This, if the height (PH) of the blocking pattern 131 is less than RW/2, there is a disadvantage that the organic insulating layer can be formed in the form of an edge rising regardless of the presence or absence of the raised portion 130, the blocking pattern (131 If the height (PH) of R) exceeds RW*1.5, it is because there is a disadvantage that an uncoated region of the organic insulating material may be generated by the raised portion 130.

In addition, the bottom surface of the blocking pattern 131, that is, the length (PWM) of the third side SD3 satisfies the range of 25 μm to 100 μm. In this way, it is possible to prevent the uneven area of the organic insulating material while preventing the raised form of the edge of the organic insulating layer.

In addition, the plurality of blocking patterns 131 are arranged spaced apart from each other at a predetermined interval (AD), wherein the spacing (AD) between the blocking patterns 131 is 1/3 of the length (PWM) of the third side (SD3) It is more than twice and less than the length (PWM) of the third side SD3. That is, the interval AD between the blocking patterns 131 satisfies the range of PWM/3 to PWM.

This has the disadvantage that if the gap AD between the blocking patterns 131 is too narrow, less than PWM/3, an uncoated region of the organic insulating material may be generated in the region adjacent to the outer support 120, and the blocking pattern ( This is because if the interval AD between 131) exceeds the PWM and becomes too wide, the organic insulating layer may be formed in the shape of an edge rise regardless of the rise prevention unit 130.

Meanwhile, FIG. 4 illustrates a case where the blocking pattern 131 is an isosceles triangle, but one embodiment of the present application is not limited thereto. That is, the shape of the blocking pattern 131 may be selected as long as it is wider as it is adjacent to the outer supporter 120 and has a smaller width as it is closer to the center of the transmissive portion 110. For example, the shape of the blocking pattern 131 may be changed to an isosceles triangle, a semicircle, a semi-ellipse, an arrowhead, and a step.

That is, as illustrated in FIG. 5A, the blocking pattern 132 may have a curved arrowhead shape in which the first and second sides (SD1 and SD2 in FIG. 4) are not straight lines.

Alternatively, as illustrated in FIG. 5B, the blocking pattern 133 may be a stepped shape in which at least one trapezoid having different sizes is connected. In this case, an area adjacent to the center of the transmissive part 110 among the stepped blocking patterns 133 may be an isosceles triangle.

Alternatively, as illustrated in FIG. 5C, the blocking pattern 134 may be a stepped shape in which at least one trapezoid having different sizes is connected, but an area adjacent to the center of the transmissive portion 110 may be an arrowhead type.

Meanwhile, FIGS. 2 and 3 illustrate that the anti-rising portion 130 is formed to surround the entire edge of the transmissive portion 110, but one embodiment of the present application is not limited thereto.

That is, as shown in FIG. 6A, the raised stopper 130 may be formed on the upper and lower sides of the edges of the transmissive portion 110.

Alternatively, as illustrated in FIG. 6B, the raised portion 130 may be formed on the left and right sides of the edges of the transmissive portion 110.

Alternatively, as illustrated in FIGS. 6C and 6D, the raised portion 130 may be formed on only one side of the edge of the transmissive portion.

Next, a method of manufacturing an organic light emitting display device using a mask for forming an organic insulating layer according to an embodiment of the present application will be described.

As illustrated in FIG. 7, a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present application includes a thin film transistor array substrate including a plurality of thin film transistors corresponding to a plurality of pixel regions, and a plurality of pixel regions. Preparing a light emitting array including a plurality of organic light emitting elements (S110), forming a protective layer on the light emitting array (S120), and the light emitting array on the protective layer interposed between the thin film transistor array substrate and the substrate It includes a step (S130) of forming a sealing layer.

In the step of forming a protective layer (S120), the protective layer is formed of a multi-layer structure including two or more insulating layers each formed of an organic insulating material or an inorganic insulating material having different components or thicknesses. Hereinafter, for the sake of brevity, it will be described as an example that the protective layer is a multi-layer structure of a first inorganic insulating layer/organic insulating layer/second inorganic insulating layer.

In this case, the step of forming the protective layer (S120) is a step of forming a first inorganic insulating layer on the entire surface of the light emitting array (S121), a mask according to an embodiment of the present application (FIGS. 2 to 4, 5A to 5) 5C and FIGS. 6A to 6D), forming an organic insulating layer on the front surface of the first inorganic insulating layer (S122) and forming a second inorganic insulating layer on the organic insulating layer (S123) ).

As shown in FIG. 8A, a thin film transistor array substrate 210 and a light emitting array 220 formed thereon are provided. (S110)

As shown in FIG. 8B, the thin film transistor array substrate 210 according to an embodiment of the present disclosure includes gate lines GL and data lines DL formed to cross each other so that a plurality of pixel areas PA are defined, And a plurality of thin film transistors TFT corresponding to the plurality of pixel areas PA.

In addition, the light emitting array 220 includes a plurality of organic light emitting elements ED formed in each light emitting area of the plurality of pixel areas PA. Here, each organic light emitting element (ED) is connected between the thin film transistor (TFT) and the reference power supply (Vdd), and the light based on the driving current corresponding to the potential difference between each thin film transistor (TFT) and the reference power supply (Vdd) Emits.

For example, as illustrated in FIG. 8C, the thin film transistor array substrate 210 includes a substrate 211 made of a light-transmitting flexible material, a multiple buffer layer 212 formed on a front surface of the substrate 211, and multiple A thin film transistor (TFT) is formed on the buffer layer 212 corresponding to each pixel area PA.

The substrate 211 may be formed of a flexible substrate made of a plastic material or a metal material. Illustratively, the substrate 211 is made of polyimide, polyethersulphone (PES), polyacrylate (PAR), polyehterimide (PEI), polyethylene naphthalate, and polyethylene. It may be made of a polymer plastic material such as terephthalate (PET, polyehtyleneterepthalate). Alternatively, the back plate 211d may be made of a metal material such as aluminum and copper.

The multi-buffer layer 212 may be formed by stacking a plurality of insulating layers selected from at least one of an organic insulating material and an inorganic insulating material. That is, the multi-buffer layer 212 may be formed in a structure in which two or more insulating layers having different thicknesses, components, and composition ratios are stacked. For example, the material of the multi-buffer layer 212 may be SiN _x or SiO _y . The multi-buffer layer 212 blocks the deterioration-causing factors such as moisture and oxygen from penetrating the light emitting array 120 through the substrate 211.

The thin film transistor TFT includes an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

The active layer ACT is formed on at least a portion of the non-emission region of each of the pixel regions PA on the multi-buffer layer 212, and includes a channel region and source regions ACT_S and drain regions ACT_D on both sides thereof.

The active layer ACT is covered with a gate insulating layer 213 formed on the entire surface of the multi-buffer layer 212.

The gate electrode GE is formed on the gate insulating layer 213 to overlap at least the channel region ACT of the active layer.

The gate electrode GE is covered with an interlayer insulating layer 214 formed on the entire surface of the gate insulating layer 213.

The source electrode SE and the drain electrode DE are formed to be spaced apart from each other on the interlayer insulating layer 214. At this time, the source electrode SE overlaps at least the source region ACT_S of the active layer, and the source region ACT_S of the active layer through the contact hole passing through the gate insulating layer 213 and the interlayer insulating layer 214. Connected. In addition, the drain electrode DE overlaps at least the drain region ACT_D of the active layer, and the drain region ACT_D of the active layer through the contact hole passing through the gate insulating layer 213 and the interlayer insulating layer 214. Connected.

The thin film transistor TFT including the active layer ACT, the gate electrode GE, the source electrode SE, and the drain electrode DE is covered with an overcoat layer 215 formed on the entire surface of the interlayer insulating layer 214. All.

Each of the plurality of light emitting elements ED is a bank formed in the first and second electrodes EX1 and EX2 facing each other, the light emitting layer EL interposed therebetween, and the non-light emitting area of each pixel area PA ( BK).

The first electrode EX1 is formed on the overcoat layer 215 to correspond to the emission region of each pixel region PA, and the thin film transistor TFT is formed through the pixel contact hole CTH passing through the overcoat layer 215. It is connected with.

The bank BK is formed on the overcoat layer 215 to correspond to the non-emission region of each pixel area PA, and is formed to overlap at least partly with the edge of the first electrode EX1.

The emission layer EL is formed on the first electrode EX1.

The second electrode EX2 is formed to face the first electrode EX1 with the light emitting layer EL interposed therebetween.

9A, a first inorganic insulating layer 231 is formed on the light emitting array 220. (S121) At this time, the first inorganic insulating layer 231 may be formed of any one of SiNx, SiOy and SiOCz. In addition, although not separately illustrated, the step (S121) of forming the first inorganic insulating layer 231 may be performed using a general open mask (20 of FIG. 1A ).

As shown in FIG. 9B, the mask 100 is aligned on the first inorganic insulating layer 231, and as shown in FIG. 9C, in the state where the mask 100 is aligned, the first inorganic insulating layer ( 231) An organic insulating material is laminated on the entire surface of the image. As a result, as illustrated in FIG. 9D, an organic insulating film 232 is formed on the first inorganic insulating layer 231. (S122)

The step (S122) of forming the organic insulating layer 232 is performed using the mask 100, and the mask 100 is the same as described above, so a duplicate description will be omitted.

9E, the second inorganic insulating layer 233 is formed on the organic insulating layer 232. (S123) At this time, as in the step (S121) of forming the first inorganic insulating layer 231, the second inorganic insulating layer 233 may be formed of any one of SiNx, SiOy, and SiOCz. In addition, although not separately illustrated, the step (S123) of forming the second inorganic insulating layer 233 may be performed using a general open mask (20 of FIG. 1A ).

Thus, a protective layer 230 including a first inorganic insulating layer 231, an organic insulating layer 232, and a second inorganic insulating layer 233 sequentially stacked on the light emitting array 120 is formed. (S120)

Subsequently, as illustrated in FIG. 9F, on the protective layer 230, a sealing layer 240 that is oppositely bonded to the thin film transistor array substrate 210 with the light emitting array 220 therebetween is formed. (S130)

At this time, the sealing layer 240 may be provided as a translucent film including an isotropic or retardation film (λ/4 film). And at least one surface of the sealing layer 240 may be coated with an inorganic material or an organic material. In addition, a barrier layer 241 for adhering between the protective layer 230 and the sealing layer 240 may be further formed on one surface of the sealing layer 240 facing the protective layer 230. At this time, the barrier layer 241 is not only for adhering between the protective layer 230 and the sealing layer 240, but also is provided with an insulating material having moisture permeability to penetrate moisture and oxygen toward the light emitting array 220. It may be shielding.

As described above, according to one embodiment of the present application, the mask 100 including the raised portion 130 that is disposed on at least one side of the edge of the transmissive portion 110 to pass the organic insulating material in a smaller amount than the transmissive portion 110 By using, by forming the organic insulating layer 232, it can be prevented that the organic insulating layer 232 is formed in the form of raised edges. As a result, the deterioration of the quality of the organic light emitting display device due to the visibility of the edge rise can be prevented.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications and changes are possible within the scope of the present invention without departing from the technical spirit of the present invention. It will be obvious to those who have the knowledge of

100: mask 110: transparent portion
120: outer support 130: rise prevention
131~134: Interception pattern SD1, SD2: First and second sides
SD3: Third side AP: Contact between first and second sides
RD: Repair from AP to SD3
AD: Interval between blocking patterns PWM: SD3 length
PH: Height of the blocking pattern 210: Thin film transistor array substrate
220: light emitting array 230: protective layer
231: first inorganic insulating layer 232: organic insulating layer
233: second inorganic insulating layer 240: sealing layer
241: barrier layer

Claims (15)

In the mask for forming an organic insulating layer corresponding to the front surface on the light emitting array including a plurality of organic light emitting elements corresponding to a plurality of pixel areas,
A transmissive portion corresponding to the front surface of the light emitting array, through which an organic insulating material passes;
An outer support supporting the permeable portion; And
Between the permeable portion and the outer support, it is arranged along at least one side of the edge of the permeable portion adjacent to the outer support, and includes a stopper having a plurality of spaced apart blocking patterns,
The blocking patterns of the raised portion have a width of 25 µm to 100 µm that comes into contact with the outer support, a larger width adjacent to the outer support, and a smaller width adjacent to the center of the permeable portion, and shielding the passage of the organic insulating material. Mask. According to claim 1,
The rising prevention portion has a plurality of blocking patterns and a transmission portion pattern extending from the transmission portion in a shape meshed with the blocking patterns, wherein the transmission portion pattern is a mask that passes the organic insulating material less than the transmission portion.
delete According to claim 1,
The shape of each blocking pattern is one of a pointed polygon, a semicircle, a semi-ellipse, and an arrowhead. According to claim 1,
Each blocking pattern includes at least three sides and at least three vertices, and is a polygon that is congruent based on a water line passing through the third side at a vertex where the first and second sides meet,
The third side is a mask that is a line segment abutting the outer support.
delete The method of claim 5,
The plurality of blocking patterns are arranged spaced apart from each other at a predetermined interval,
The distance between the blocking patterns is a mask that is 1/3 or more of the length of the third side and less than the length of the third side. The method of claim 5,
The shape of each blocking pattern is one of an isosceles triangle, an arrowhead type, and a step type. According to claim 2,
The rise prevention portion is formed on the entire edge of the transmission portion,
The blocking patterns of the raised portion are preferentially arranged along the upper and lower sides of the edges of the transmissive portion,
The blocking patterns arranged on the left and right sides of the edges of the transmissive portion are spaced apart from the blocking patterns arranged on the upper and lower sides of the edges of the transmitting portion. A light emitting array including a thin film transistor array substrate including a plurality of thin film transistors formed corresponding to a plurality of pixel regions on a substrate, and a plurality of organic light emitting elements formed corresponding to the plurality of pixel regions on the thin film transistor array substrate. Preparing a step;
Forming an organic insulating layer on the light emitting array using a mask; And
And forming a sealing layer facing the thin film transistor array substrate with the light emitting array interposed therebetween.
In the step of forming the organic insulating layer,
The mask
A transmissive portion corresponding to the front surface of the light emitting array and passing an organic insulating material forming the organic insulating layer;
An outer support supporting the permeable portion; And
Between the permeable portion and the outer support, it is arranged along at least one side of the edge of the permeable portion adjacent to the outer support, and includes a stopper having a plurality of spaced apart blocking patterns,
The blocking patterns of the raised portion have a width of 25 µm to 100 µm that comes into contact with the outer support, and the wider the adjoining the outer supporter, the wider the adjoining the outer supporter, and the smaller the adjoining center of the transmissive part, and the passage of the organic insulating material. Method of manufacturing an organic light emitting display device for shielding. The method of claim 10,
In the step of forming the organic insulating layer,
The raised portion of the mask
A method of manufacturing an organic light emitting display device having the plurality of blocking patterns and a transmitting portion pattern extending from the transmitting portion in a shape interlocked with the blocking patterns, wherein the transmitting portion pattern passes the organic insulating material less than the transmitting portion. The method of claim 11,
Each blocking pattern includes at least three sides and at least three vertices, and is a polygon that is congruent based on a water line passing through the third side at a vertex where the first and second sides meet,
The third side is a method of manufacturing an organic light emitting display device that is a line segment that contacts the outer support. delete The method of claim 12,
The plurality of blocking patterns are arranged spaced apart from each other at a predetermined interval,
The gap between the blocking patterns is a method of manufacturing an organic light emitting display device that is 1/3 or more of the length of the third side and less than the length of the third side. The method of claim 11,
The rise prevention portion is formed on the entire edge of the transmission portion,
The blocking patterns of the raised portion are preferentially arranged along the upper and lower sides of the edges of the transmissive portion,
A method of manufacturing an organic light emitting display device in which blocking patterns arranged on left and right sides of the edges of the transmissive portion are spaced apart from blocking patterns arranged on upper and lower sides of the edge of the transmissive portion.

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