KR102114999B1 - Organic Light Emitting Diode Display Device and Method for Manufacturing The Same - Google Patents

Abstract

An organic light emitting display device according to an aspect of the present invention includes a substrate; A thin film transistor positioned on the substrate and including an active layer, a gate electrode, and a first electrode and a second electrode connected to the active layer; And a storage electrode including a conductive layer and a voltage transfer layer that face each other to generate capacitance, and wherein the active layer and the voltage transfer layer are connected through a first electrode located inside a single contact hole. do.

Description

Organic Light Emitting Diode Display Device and Method for Manufacturing The Same

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an active organic light emitting display device and a method of manufacturing the same.

Based on information display devices such as large-sized TVs and computer monitors, the market for cutting-edge information and communication electronic devices has been actively increasing in recent years thanks to the increase in consumption of portable electronic devices such as tablet PCs and mobile phones. A display device is a device for displaying information of information and communication electronic devices, and its use area has been expanded for displaying information or advertisements in portable and public places, and accordingly, light weight and low power technologies are required. Accordingly, a conventional cathode ray tube (CRT) is replaced with a flat panel display (FPD) such as a liquid crystal display (LCD) or an organic light emitting diode display (OELD). Is getting attention.

Among them, the organic light emitting display device has characteristics that exceed the liquid crystal display device in terms of color reproducibility, power consumption, response time, etc., and also has a contrast ratio because it is a self-emission type that emits light by itself. It is possible to implement a large, ultra-thin display device, and has a wide viewing angle.

Due to the above advantages, the organic light emitting display device has been spotlighted as an advantageous device for realizing a next-generation display device, a transparent display or a flexible display. One of the topics of study of a general organic light emitting display device is to increase the luminous efficiency, and in particular, in the case of a transparent display, improving the transparency is a major research issue.

The organic light emitting display device is largely divided into a top emission type and a bottom emission type according to the light emission direction, and the top emission type is a driving driving an organic light emitting element. Since the organic light emitting element located on the upper side of the driving element emits light to the upper surface, the driving element does not affect the light emitting area, but in the case of the back light emitting method, the organic light emitting element located on the upper side of the driving element Since light is emitted from the rear surface in the direction, the light emitting area is reduced by the area of the driving element.

In addition, in the case of a transparent display, as the area of the driving element increases, the area of the light emitting area or the transparent area decreases, so the area occupied by the driving element needs to be reduced to increase the light emitting area or the transparent area, so that the light emission efficiency or transparency can be improved. have.

The present invention is to solve the above-mentioned problems, and it is a technical problem to provide an organic light emitting display device capable of increasing a light emitting area or a transparent area.

An organic light emitting display device according to an aspect of the present invention for achieving the above object is a substrate; A thin film transistor positioned on the substrate and including an active layer, a gate electrode, and a first electrode and a second electrode connected to the active layer; And a storage electrode including a conductive layer and a voltage transfer layer that face each other to generate capacitance, and wherein the active layer and the voltage transfer layer are connected through a first electrode located inside a single contact hole. do.

A method of manufacturing an organic light emitting display device according to an aspect of the present invention for achieving the above object includes forming an active layer and a gate electrode on a substrate; Forming a storage electrode including a conductive layer and a voltage transfer layer on the substrate; Forming a contact hole connecting the active layer and the voltage transfer layer; And forming a first electrode inside the contact hole to connect the active layer and the voltage transfer layer.

According to the present invention, it is possible to reduce the area of the driving element region by reducing the number of contact holes connecting the conductive layer, and increase the area of the light emitting region or the transparent region.

In addition, according to the present invention, it is possible to increase the area of the light emitting area of the organic light emitting display device to improve the light emission efficiency.

In addition, according to the present invention, there is an effect that can improve the transparency by increasing the area of the transparent area of the transparent organic light emitting display device.

1 is a cross-sectional view showing an organic light emitting display device according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view showing a connection structure between a thin film transistor and a storage electrode of the organic light emitting display device according to the embodiment shown in FIG. 1;
3 to 5 are cross-sectional views showing a connection structure between a thin film transistor and a storage electrode of an organic light emitting display device according to various embodiments of the present invention; And
6A to 6C are cross-sectional views showing a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 to 2 are cross-sectional views showing an organic light emitting display device according to an embodiment of the present invention. 1 is a schematic diagram of an organic light emitting display device according to an embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view of a connection structure between a thin film transistor and a storage electrode in the embodiment of FIG. 1.

First, as illustrated in FIG. 1, an organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate 110, a thin film transistor 120, a storage electrode 130, and an organic light emitting device 160. And various insulating layers or the like located between them. Between the components of the thin film transistor 120 and the storage electrode 130, the first insulating layer 125, the second insulating layer 135, and the third insulating layer 140 are located, and the thin film transistor 120 and the storage electrode The planarization layer 150 for planarizing the lower concavo-convex is positioned on the 130 for stable formation of the organic light emitting device 160. The planarization layer 150 also electrically insulates the thin film transistor 120 and the organic light emitting device 160, so it can be regarded as a kind of insulating layer.

The thin film transistor 120 and the storage electrode 130 are some of components constituting the driving element of the pixel, and only a part of the driving element is illustrated in FIG. 1. In addition, the thin film transistor 120 and the organic light emitting device 160 are connected to each other, and in particular, the pixel electrode 161 of the organic light emitting device 160 may be connected to supply a voltage.

First, the substrate 110 may include any one of glass, plastic, and metal. In addition, the substrate 110 may include any one of the above materials, and may be embodied as a flexible substrate that can be bent. The plastics are polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET) , Polyphenylene Sulfide (PPS), Polyarylate, Polyimide, Polycarbonate (PC), Cellulose Tri Acetate (TAC), Cellulose Acetate Propionate (CAP) It can be either.

Next, the thin film transistor 120 is positioned on the substrate 110 and includes an active layer 121, a gate electrode 122, a first electrode 123 and a second electrode 124. In all drawings of the present invention, the thin film transistor 120 is illustrated in the form of a top gate, but the thin film transistor 120 is not limited thereto. In addition, the thin film transistor 120 illustrated in FIG. 1 may be a driving thin film transistor connected to the pixel electrode 161 of the organic light emitting device 160, and the thin film transistor between the thin film transistor 120 and the pixel electrode 161. Other circuit components connecting the 120 and the pixel electrode 161 may be added.

In the present invention, the thin film transistor 120 is not limited to the example shown in FIG. 1, and the active layer 121 may be a bottom gate type on the gate electrode 122 or a gate electrode 122 ) May be in the form of a double gate having plural numbers, or an oxide thin film transistor in which the active layer 121 is an oxide. That is, the thin film transistor 120 may be applied to various types of thin film transistors, including the top gate type shown in the drawings of the present invention, as well as the above described thin film transistor type.

In the present invention, the thin film transistor 120 illustrated in FIG. 1 will be described as an example.

First, the active layer 121 is positioned on the substrate 110, and the first insulating layer 125 is positioned on the active layer 121. The gate electrode 122 is positioned in a region corresponding to the active layer 121 on the first insulating layer 125. The gate electrode 122 receives a signal and serves to flow a current through the active layer 121 during a time during which the signal is transmitted. More specifically, when the thin film transistor 120 is a driving thin film transistor, the signal received by the gate electrode 122 may be a data signal transmitted according to a gate signal from a switching thin film transistor (not shown).

When a current flows through the active layer 121 by the data signal, the power voltage is transferred to the second electrode 124 through the first electrode 123 and the active layer 121, and then the second electrode 124 It is supplied to the pixel electrode 161 connected to. When the thin film transistor 120 is P-type, the first electrode 123 and the second electrode 124 may be source and drain electrodes, respectively. Conversely, when the thin film transistor 120 is N-type, the first electrode 123 ) And the second electrode 124 may be a drain electrode and a source electrode, respectively.

Next, the storage electrode 130 includes a conductive layer 131 and a voltage transfer layer 132. The conductive layer 131 and the voltage transfer layer 132 face each other to generate capacitance. The conductive layer 131 may be further formed, and may assist in generating sufficient capacitance. The voltage transfer layer 132 is connected to the first electrode 123 to receive a power voltage Vdd. Further, the conductive layer 131 is supplied with a data voltage. At this time, the potential difference between the voltage transfer layer 132 and the conductive layer 131 is stored in the storage electrode 130 to generate an electrostatic capacity capable of maintaining the emission of the organic light emitting device 160 during one frame. .

In addition, the conductive layer 131 and the voltage transfer layer 132 are active layers 121, gate electrodes 122, first electrodes 123, and second electrodes 124, which are components constituting the thin film transistor 120. ). The plurality of wirings of the driving element are designed not to overlap with the components constituting the thin film transistor 120 and are simultaneously formed on the same layer to maximize the efficiency of the process.

Next, an organic light emitting device 160 connected to the thin film transistor 120 is positioned on the thin film transistor 120. The organic light emitting device 160 includes a pixel electrode 161, an organic emission layer 163 positioned on the pixel electrode 161, and a common electrode 164 positioned on the organic emission layer 163. The organic light emitting device 160 may further include a bank layer 162. The bank layer 162 is positioned on the pixel electrode 161 and partially overlaps with an edge of the pixel electrode 161 to define a light emitting area.

The first electrode 123 of the thin film transistor 120 may be connected to a voltage source such as a power supply voltage (not shown), and at the same time, the active layer 121 and the voltage transfer layer 132 may be connected. The voltage supplied through the first electrode 123 is transmitted to the second electrode 124 through a channel formed in the active layer 121. The second electrode 124 is connected to the pixel electrode 161 of the organic light emitting device 160 to transmit a voltage driving the organic light emitting device 160. A power voltage (not shown) is also connected to the second electrode 124 to supply a voltage, and a current flows through the organic light emitting layer 163 due to a voltage difference between the first electrode 123 and the second electrode 124. When the exciton generated by the combination of supplied electrons and holes transitions from the excited state to the ground state, the organic light emitting layer 163 emits light. do.

The active layer 121 and the voltage transfer layer 132 are connected through a first electrode 123 which is one of the electrodes of the thin film transistor 120, and the first electrode 123 is inside one contact hole FCH. Located, it is characterized by connecting the active layer 121 and the voltage transfer layer 132. The first electrode 123 may be connected to other wiring such as a power voltage.

The first electrode 123 may connect the active layer 121 and the voltage transfer layer 132 through a plurality of contact holes, but is also connected to other wires through a single contact hole (FCH), and the active layer 121 By connecting the voltage transfer layer 132 at the same time, the number of contact holes for connecting wiring inside the driving element can be reduced to reduce the area of the driving element. As the area of the driving element is reduced, the light emitting area or the transparent area can be increased, and thus there is an advantage of improving light emission efficiency and transparency.

In addition, the first electrode 123 may include a transparent conductive oxide layer (not shown). The transparent conductive oxide layer (not shown) is deposited on the surface of the contact hole (FCH) to contact the active layer 121 and the voltage transfer layer 132. Transparent conductive oxides (transparent conductive oxide), especially when deposited by a sputtering (sputtering) method, the step coverage (step coverage) is very excellent, it can be deposited on the side or bottom of the wiring. Therefore, the transparent conductive oxide layer (not shown) helps the first electrode 123 to more stably contact the active layer 121 and the voltage transfer layer 132.

In order to connect the active layer 121 and the voltage transfer layer 132, the first electrode 123 penetrates any one of the active layer 121 and the voltage transfer layer 132, and is connected to the other one. to be. Since the region where the first electrode 123 is located is the same as the region where the contact hole FCH is located, the contact hole FCH also penetrates any one of the active layer 121 and the voltage transfer layer 132 and the other one It can be positioned to connect with.

Specifically, in FIG. 2, the thin film transistor 120 is in the form of a top gate, and since the active layer 121 is positioned relatively lower, the first electrode 123 penetrates through the voltage transfer layer 132. It may be connected to the surface of the lower active layer 121. Likewise, the contact hole FCH may penetrate the voltage transmission layer 132 and may be located on the surface of the active layer 121. That is, the contact hole FCH may penetrate the first insulating layer 125, the voltage transmission layer 132, and the second insulating layer 135 to reach the surface of the active layer 121.

Here, the first electrode 123 is in side contact with the voltage transfer layer 132 through a contact hole (FCH) positioned through the voltage transfer layer 132 to the surface of the active layer 121, and the active layer 121 ) And the front contact. Since the contact hole FCH penetrates the voltage transfer layer 132, an area where the first electrode 123 and the voltage transfer layer 132 may contact each other is etched when the contact hole FCH is formed. ). In addition, when forming the contact hole (FCH), the active layer 121 is not etched, but is also etched to the first insulating layer 125 located on the active layer 121, so the first electrode 123 is the active layer 121 ).

3 to 5 are cross-sectional views illustrating a connection structure between the thin film transistor 120 and the storage electrode 130 of the organic light emitting display device according to various embodiments.

First, FIG. 3 illustrates that the first electrode 123 penetrates the voltage transfer layer 132 and extends to a portion of the active layer 121. Similarly, the contact hole FCH may be formed to penetrate the voltage transmission layer 132 and extend to a portion of the active layer 121. Here, the contact hole FCH may penetrate the first insulating layer 125, the voltage transmission layer 132, and the second insulating layer 135 and extend to some etched regions of the active layer 121.

The first electrode 123 is in side contact with the voltage transfer layer 132 through a contact hole (FCH) extending through a portion of the active layer 121 through the voltage transfer layer 132, and the active layer 121 Contacts the internal etched area of the. Since the contact hole FCH penetrates the voltage transfer layer 132, an area where the first electrode 123 and the voltage transfer layer 132 may contact each other is etched when the contact hole FCH is formed. ). In addition, when forming the contact hole FCH, since a part of the active layer 121 is etched, the first electrode 123 may contact the etched inner region of the active layer 121.

In FIG. 4, the first electrode 123 is shown to penetrate both the voltage transfer layer 132 and the active layer 121. Therefore, the contact hole FCH also penetrates both the voltage transfer layer 132 and the active layer 121. The contact hole FCH may penetrate through both the first insulating layer 125, the voltage transmitting layer 132, and the second insulating layer 135 and the active layer 121.

The first electrode 123 may make side contact with both the voltage transfer layer 132 and the active layer 121 through a contact hole FCH passing through both the voltage transfer layer 132 and the active layer 121. Since the contact hole FCH penetrates both the voltage transfer layer 132 and the active layer 121, a region where the first electrode 123 can contact the voltage transfer layer 132 and the active layer 121 is a contact hole When forming the (FCH), the etched voltage transfer layer 132 and the active layer 121 may be internal side surfaces.

5 illustrates an embodiment in which the area of the contact region between the first electrode 123 and the voltage transfer layer 132 and the area of the contact region between the first electrode 123 and the active layer 121 can be further increased. . The contact region may be further extended by additionally performing a BOE (Buffered Oxide Etch) type etching process in addition to an etching process performed when forming a contact hole (FCH).

The BOE-type etching process is one of wet etching methods using an etchant containing ammonium fluoride (NH4F) or hydrofluoric acid (HF). In particular, in the case of hydrofluoric acid (HF), during the etching process, there is an advantage that the silicon oxide can be etched at a rapid rate, and when the BOE type etching process is additionally performed, the first insulating layer 125 including silicon oxide and A portion of the second insulating layer 135 may be etched more than other regions.

Accordingly, the first insulating layer 125, the voltage transmitting layer 132, and the second insulating layer 135 are first etched, and then the BOE etching process is performed, so that the active layer 121 and the voltage transmitting layer 132 are etched. The lower portions of the first insulating layer 125 and the second insulating layer 135 that are in contact with each other may be etched more than other regions. Accordingly, the area of the contact area between the first electrode 123 and the active layer 121 and the area of the contact area between the first electrode 123 and the voltage transfer layer 132 can be further increased, thereby improving side contact stability. I can do it.

6A to 6C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

First, as shown in FIG. 6A, the active layer 121 of the thin film transistor 120 is formed on the substrate 110. Before forming the active layer 121, a buffer layer (not shown) may be further formed on the substrate 110. In addition, the conductive layer 131 of the storage electrode 130 may be formed simultaneously with the active layer 121. Since the active layer 121 is formed of a semiconductor material and only the doped portion has conductivity, the conductive layer 131 formed simultaneously with the active layer 121 may be doped to have conductivity.

The formation of the active layer 121 and the conductive layer 131 at the same time is only one embodiment, and is not limited thereto, and the conductive layer 131 may be formed separately from the active layer 121.

Next, the first insulating layer 125 is formed on the active layer 121 and the conductive layer 131. The first insulating layer 125 may be formed of a general insulating layer forming material, and typically includes silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

Next, the gate electrode 122 is formed in a region corresponding to the active layer 121. The gate electrode 122 may be formed simultaneously with the voltage transfer layer 132 like the active layer 121. However, the present invention is not limited thereto, and the gate electrode 122 and the voltage transfer layer 132 may be formed separately. Therefore, the storage electrode 130 may be formed on the substrate 110 simultaneously or separately with the thin film transistor 120. The storage electrode 130 may include a conductive layer 131 and a voltage transfer layer 132.

Next, the second insulating layer 135 is formed on the gate electrode 122 and the conductive layer 131 and is patterned to form contact holes FCH and SCH. The contact hole FCH is formed by etching the second insulating layer 135, the voltage transmitting layer 132, and the first insulating layer 125, and exposing the active layer 121. Alternatively, a contact hole FCH may be formed by etching a portion of the active layer 121 or the active layer 121 to penetrate therethrough. That is, the contact hole FCH connects the active layer 121 and the voltage transfer layer 132. The contact hole FCH may penetrate any one of the active layer 121 and the voltage transfer layer 132 so that the contact hole FCH connects the active layer 121 and the voltage transfer layer 132. In FIG. 6A, the contact hole FCH penetrates the voltage transfer layer 132, but when the method of the thin film transistor 120 is changed and the active layer 121 is formed above the voltage transfer layer 132, it is active. The layer 121 may be penetrated by a contact hole (FCH).

The contact hole SCH is formed by etching the second insulating layer 135 and the first insulating layer 125, and may expose the active layer 121. The contact holes (FCH, SCH) may be formed through a photolithography process, and after applying a photosensitive layer (not shown) on the second insulating layer 135, an exposure process (exposure) is performed and etching is performed. The photosensitive layer (not shown) corresponding to the region to be removed is removed. Then, through the etching process (etch), to form a contact hole (FCH, SCH) in the area exposed by the removed photosensitive layer (not shown), in the present invention, the primary etching using dry etching (dry etch) The process proceeds. For the dry etching, an etchant capable of etching the first insulating layer 125 and the second insulating layer 135 may be used.

In particular, when considering even forming a contact hole (FCH) in which the first electrode 123 is disposed, the primary etching process includes the first insulating layer 125, the second insulating layer 135, and the voltage transmitting layer 132. ) Must use an etchant that can etch simultaneously. If a part of the active layer 121 or the active layer 121 is etched to form a contact hole (FCH), the etch material used in the primary etching process includes the first insulating layer 125 and the second insulating layer ( 135), the voltage transfer layer 132 and the active layer 121 must be etched simultaneously.

Alternatively, the first insulating layer is performed by performing a primary etching process using an etch material for etching the first insulating layer 125 and the second insulating layer 135 and an etch material for etching the voltage transfer layer 132, respectively. (125), the voltage transfer layer 132 and the second insulating layer 135 may be sequentially etched. Similarly, if a contact hole (FCH) is formed by etching a portion of the active layer 121 or through the active layer 121, the first insulating layer 125, the second insulating layer 135, and the voltage transmitting layer 132 ) And the first etching process by using an etching material for etching the active layer 121, respectively, the first insulating layer 125, the voltage transfer layer 132, the second insulating layer 135, the active layer ( 121) may be etched sequentially.

Although not illustrated in FIG. 6A, a second etching process may be performed to implement the embodiment illustrated in FIG. 5. The secondary etching process may be performed to induce a more stable contact by increasing an area in which the first electrode 123 contacts the active layer 121 and the voltage transfer layer 132. The secondary etching process may be performed using a buffered oxide etching (BOE) method, and the etching process using the BOE method is one of wet etching methods using an etchant containing ammonium fluoride (NH4F) or hydrofluoric acid (HF).

That is, after the dry etching process, which is the primary etching process, the secondary etching process may be performed through wet etching using an etchant containing ammonium fluoride (NH 4 F) or hydrofluoric acid (HF). Through the second etching process, the first insulating layer 125 and the second insulating layer 135 are more etched in the boundary regions of the active layer 121 and the voltage transfer layer 132, so that the first electrode 123 The active layer 121 and the voltage transfer layer 132 have an advantage of increasing the area of the contact area.

Accordingly, at least one of the active layer and the voltage transfer layer may be etched through dry etching, which is a primary etching process, and then a BOE etching process, which is a secondary etching process, may be performed.

Next, the first electrode 123 is formed inside the contact hole FCH to connect the active layer 121 and the voltage transfer layer 132, and is connected to the active layer 121 inside the contact hole SCH. The second electrode 124 is formed. As described above, the first electrode 123 and the second electrode 124 are formed to complete the formation of the thin film transistor 120, and the third insulating layer 140 is formed on the thin film transistor 120.

The planarization layer 150 may be formed on the third insulating layer 140, and the organic light emitting device 160 may be formed on the planarization layer 150. The organic light emitting device 160 includes a pixel electrode 161, a bank layer 162, an organic light emitting layer 163 and a common electrode 164.

When the pixel electrode 161 is formed by etching the planarization layer 150 and the third insulating layer 140 to expose the second electrode 124, the pixel electrode 161 may be connected to the second electrode 124. have. A bank layer 162 overlapping the edge of the pixel electrode 161 is formed on the pixel electrode 161 to define a region where the organic emission layer 163 and the pixel electrode 161 contact each other, thereby defining a light emission region. .

Thereafter, the organic emission layer 163 may be formed on the first electrode 123 and the bank layer 162, and the common electrode 164 may be formed on the organic emission layer 163.

As described above, the conductive wires such as the active layer 121 and the voltage transfer layer 132 are connected through a single connecting member such as the first electrode 123, thereby reducing the number of contact holes connecting the wires to reduce the area of the driving element region. It is possible to reduce and increase the area of the light emitting area, and accordingly, increase the area of the light emitting area of the organic light emitting display device, thereby improving light emission efficiency. In addition, when the present invention is applied to a transparent display, there is an effect of improving the transparency by reducing the area of the driving element region and increasing the area of the transparent region.

Those skilled in the art to which the present invention pertains will understand that the above-described present invention can be implemented in other specific forms without changing its technical spirit or essential features.

Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the following claims rather than the above detailed description, and it should be interpreted that all changes or modifications derived from the meaning and scope of the claims and equivalent concepts are included in the scope of the present invention. do.

110: substrate 120: thin film transistor
121: active layer 122: gate electrode
123: first electrode 124: second electrode
125: first insulating layer 130: storage electrode
131: conductive layer 132: voltage transfer layer
135: second insulating layer 140: third insulating layer
150: planarization layer 160: organic light emitting device

Claims (16)

delete delete Board;
A thin film transistor positioned on the substrate and including an active layer, a gate electrode, and a first electrode and a second electrode connected to the active layer; And
It includes; a storage electrode including a conductive layer and a voltage transfer layer that face each other to generate capacitance;
The active layer and the voltage transfer layer are connected through a first electrode located inside the contact hole,
The contact hole penetrates any one of the active layer and the voltage transfer layer, and the organic electroluminescent display device is characterized in that it is located up to the other surface. Board;
A thin film transistor positioned on the substrate and including an active layer, a gate electrode, and a first electrode and a second electrode connected to the active layer; And
It includes; a storage electrode including a conductive layer and a voltage transfer layer that face each other to generate capacitance;
The active layer and the voltage transfer layer are connected through a first electrode located inside the contact hole,
The contact hole penetrates any one of the active layer and the voltage transfer layer, and extends to a portion of the other one. Board;
A thin film transistor positioned on the substrate and including an active layer, a gate electrode, and a first electrode and a second electrode connected to the active layer; And
It includes; a storage electrode including a conductive layer and a voltage transfer layer that face each other to generate capacitance;
The active layer and the voltage transfer layer are connected through a first electrode located inside the contact hole,
The contact hole penetrates both the active layer and the voltage transfer layer. The method according to any one of claims 3 to 5,
Any one of the conductive layer and the voltage transfer layer is an organic light emitting display device positioned on the same layer as any one of the active layer and the gate electrode. The method according to any one of claims 3 to 5,
The organic light emitting display device further includes an organic light emitting device positioned on the thin film transistor,
The organic light emitting device,
A pixel electrode connected to the second electrode;
An organic emission layer on the pixel electrode; And
An organic electroluminescent display device comprising a; common electrode located on the organic light emitting layer. Forming an active layer and a conductive layer on the substrate;
Forming a gate electrode corresponding to the active layer and a voltage transfer layer corresponding to the conductive layer on the active layer and the first insulating layer covering the conductive layer;
Forming a second insulating layer covering the gate electrode and the voltage transfer layer;
Forming a contact hole penetrating the second insulating layer, the voltage transfer layer, and the first insulating layer, and reaching a surface of the active layer and corresponding to a portion of the active layer; And
And forming a first electrode in contact with the active layer and the voltage transfer layer through the contact hole on the second insulating layer. delete delete delete Forming an active layer and a conductive layer on the substrate;
Forming a gate electrode corresponding to the active layer and a voltage transfer layer corresponding to the conductive layer on the active layer and the first insulating layer covering the conductive layer;
Forming a second insulating layer covering the gate electrode and the voltage transfer layer;
Forming a contact hole penetrating the second insulating layer, the voltage transfer layer, and the first insulating layer and extending to at least a portion of the active layer; And
And forming a first electrode in contact with the active layer and the voltage transfer layer through the contact hole on the second insulating layer. Forming an active layer and a conductive layer on the substrate;
Forming a gate electrode corresponding to the active layer and a voltage transfer layer corresponding to the conductive layer on the active layer and the first insulating layer covering the conductive layer;
Forming a second insulating layer covering the gate electrode and the voltage transfer layer;
Forming contact holes penetrating the second insulating layer, the voltage transmitting layer, the first insulating layer, and the active layer; And
And forming a first electrode in contact with the active layer and the voltage transfer layer through the contact hole on the second insulating layer. The method according to any one of claims 8, 12 and 13,
The forming of the contact hole is a method of manufacturing an organic light emitting display device that is performed by a dry etching process. The method according to any one of claims 8, 12 and 13,
The forming of the contact hole is a method of manufacturing an organic light emitting display device performed by a BOE etching process. The method according to any one of claims 3 to 5,
The first electrode includes a transparent conductive oxide layer,
An organic electroluminescent display device wherein the transparent conductive oxide layer contacts the active layer and the voltage transfer layer inside the contact hole.

Images