KR102110369B1 - Electro-optic modulator and optic transmossion modulator including the same - Google Patents

Abstract

The all-optical converter includes a semiconductor substrate, a core region and a slab region. The core region includes a high concentration doped region disposed on the semiconductor substrate and disposed between the first low concentration doped region, the second low concentration doped region, and the first low concentration doped region and the second low concentration doped region. The slab regions contact the core region and are disposed on the semiconductor substrate. When a reverse bias voltage is applied between the first low concentration doped region and the second low concentration doped region, the width of the depletion region included in the high concentration doped region can be adjusted. When the width of the depletion region is adjusted, an optical signal transmitted through the depletion region can be adjusted. The all-optical converter according to the present invention can increase the operating speed of the system and reduce power consumption.

Description

An all-optical converter and an optical transmission conversion device including the same ELECTRO-OPTIC MODULATOR AND OPTIC TRANSMOSSION MODULATOR INCLUDING THE SAME

The present invention relates to a memory device, and more particularly, to an all-optical converter and an optical transmission conversion device including the same.

Recently, with the development of semiconductor integrated technology, high-performance and high-speed of various electronic devices, such as a processor, a memory device, and a display device, are progressing.

If an electric transmission line is used for high performance and high speed of electronic devices, there may be a difference in transmission speed depending on the transmission line, but there is a limit in increasing the transmission speed. Therefore, various attempts have been made to increase the transmission speed of data through optical transmission.

One object of the present invention to solve the above problems is to provide an all-optical converter that increases the operating speed of the system and reduces power consumption.

An object of the present invention for solving the above problems is to provide an optical transmission conversion apparatus for increasing the operating speed of the system including the all-optical converter and reducing power consumption.

In order to achieve one object of the present invention, an all-optical converter according to an embodiment of the present invention includes a semiconductor substrate, a core region, and a slab region. The core region is disposed on the semiconductor substrate and includes a first low concentration doped region, a second low concentration doped region, and a high concentration doped region disposed between the first low concentration doped region and the second low concentration doped region. The slab regions contact the core region and are disposed on the semiconductor substrate.

In an exemplary embodiment, the core region may act as a waveguide for optical signals.

In an exemplary embodiment, the high concentration doped region may include a first high concentration doped region and a second high concentration doped region. The first high concentration doped region may be disposed between the first low concentration doped region and the second low concentration doped region and may contact the first low concentration doped region. The second high concentration doping region may be disposed between the first high concentration doping region and the second low concentration doping region and may contact the second low concentration doping region. The first high concentration doped region and the second high concentration doped region may contact each other.

In an exemplary embodiment, the first low concentration doping region, the first high concentration doping region, the second high concentration doping region, and the second low concentration doping region included in the core region are disposed in a first direction and the second A low concentration doped region may contact the semiconductor substrate.

In an exemplary embodiment, the impurity concentration of the first low concentration doped region is lower than the impurity concentration of the high concentration doped region, and the first low concentration doped region can be doped with a p-type impurity.

In an exemplary embodiment, the impurity concentration of the second low concentration doped region is lower than the impurity concentration of the high concentration doped region, and the second low concentration doped region may be doped with an n-type impurity.

In an exemplary embodiment, when the first low concentration doped region is doped with the blood-type impurity, the first high concentration doped region may be doped with the blood-type impurity.

In an exemplary embodiment, when the second low concentration doped region is doped with the N-type impurity, the second high concentration doped region may be doped with the N-type impurity.

In an exemplary embodiment, the impurity concentration of the first low concentration doped region is lower than the impurity concentration of the first high concentration doped region, and the first low concentration doped region can be doped with an n-type impurity.

In an exemplary embodiment, the impurity concentration of the second low concentration doped region is lower than the impurity concentration of the second high concentration doped region, and the second low concentration doped region may be doped with a blood-type impurity.

In an exemplary embodiment, when the first low concentration doping region is doped with the N-type impurity, the first high concentration doping region may be doped with the N-type impurity.

In an exemplary embodiment, when the second low concentration doped region is doped with the blood-type impurity, the second high concentration doped region may be doped with the blood-type impurity.

In an exemplary embodiment, an operating voltage may be applied between the first low concentration doped region and the second low concentration doped region.

In an exemplary embodiment, the width of the depletion region included in the core region may be adjusted based on the operating voltage.

In an exemplary embodiment, when the operating voltage applied between the first low concentration doping region and the second low concentration doping region is a ground voltage, the width of the depletion region may be smaller than the width of the high concentration doping region.

In an exemplary embodiment, when the operating voltage is a reverse bias voltage, the width of the depletion region may increase as the reverse bias voltage increases.

In an exemplary embodiment, as the width of the depletion region changes, light loss of the core region may fluctuate.

In an exemplary embodiment, the intensity of the transmitted optical signal may be adjusted as the optical loss of the core region fluctuates.

In an exemplary embodiment, the width of the core region is greater than the width of the slab region, and the semiconductor film included in the all-optical converter includes silicon (Si), germanium (Ge), gallium-arsenide (GaAs), and combinations thereof. It can be implemented as a selected one.

In an exemplary embodiment, the first low concentration doping region, the first high concentration doping region, the second high concentration doping region, and the second low concentration doping region included in the core region are in a second direction perpendicular to the first direction. Can be placed as

In an exemplary embodiment, the width of the depletion region included in the core region may be adjusted based on an operating voltage applied between the first low concentration doped region and the second low concentration doped region.

In an exemplary embodiment, when the operating voltage is a reverse bias voltage, the width of the depletion region may increase as the reverse bias voltage increases.

An optical transmission conversion apparatus according to an embodiment of the present invention for achieving an object of the present invention includes an all-optical converter. The all-optical converter includes a semiconductor substrate, a core region, and a slab region. The core region is disposed on the semiconductor substrate and includes a first low concentration doped region, a second low concentration doped region, and a high concentration doped region disposed between the first low concentration doped region and the second low concentration doped region. The slab regions contact the core region and are disposed on the semiconductor substrate.

1 is a cross-sectional view showing a vertical structure of an all-optical converter according to embodiments of the present invention.
2 is a cross-sectional view illustrating an example of a core region included in the all-optical converter of FIG. 1.
3 is a cross-sectional view illustrating another example of the core region included in the all-optical converter of FIG. 1.
4 is a view for explaining a case in which the ground voltage is applied to the all-optical converter of FIG. 1.
5 is a view for explaining a case in which a reverse bias voltage is applied to the all-optical converter of FIG. 1.
6 is a view showing the widths of the core region and the slab region included in the all-optical converter of FIG. 1.
7 is a cross-sectional view showing a vertical structure of an all-optical converter according to an embodiment of the present invention.
8 is a cross-sectional view illustrating an example of a core region included in the all-optical converter of FIG. 7.
9 is a cross-sectional view illustrating another example of the core region included in the all-optical converter of FIG. 7.
10 is a view for explaining a case in which the ground voltage is applied to the all-optical converter of FIG. 7.
11 is a view for explaining a case in which a reverse bias voltage is applied to the all-optical converter of FIG. 7.
12 is a block diagram showing an optical transmission conversion apparatus according to embodiments of the present invention.
13 is a block diagram illustrating a memory system including the optical transmission converter of FIG. 12.
14 is a block diagram illustrating an example in which an optical transmission conversion device according to embodiments of the present invention is applied to a mobile device.
15 is a block diagram illustrating an example in which an optical transmission conversion device is applied to a computing system according to embodiments of the present invention.

With respect to the embodiments of the present invention disclosed in the text, specific structural or functional descriptions are exemplified only for the purpose of describing the embodiments of the present invention, and the embodiments of the present invention can be implemented in various forms and the text It is not to be construed as being limited to the embodiments described in.

The present invention can be variously changed and can have various forms, and specific embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosure form, and it should be understood as including all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from other components. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

When an element is said to be "connected" or "connected" to another component, it is understood that other components may be directly connected to or connected to the other component, but there may be other components in between. It should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that no other component exists in the middle. Other expressions that describe the relationship between the components, such as "between" and "immediately between" or "neighboring" and "directly neighboring to" should be interpreted as well.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "include" or "have" are intended to indicate that a feature, number, step, action, component, part, or combination thereof is described, and that one or more other features or numbers are present. It should be understood that it does not preclude the presence or addition possibilities of, steps, actions, components, parts or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person skilled in the art to which the present invention pertains. Terms, such as those defined in the commonly used dictionary, should be interpreted as meanings consistent with meanings in the context of related technologies, and should not be interpreted as ideal or excessively formal meanings unless explicitly defined in the present application. .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions for the same components are omitted.

1 is a cross-sectional view showing a vertical structure of an all-optical converter according to embodiments of the present invention.

Referring to FIG. 1, the all-optical converter 10 includes a semiconductor substrate 100, a core region 300, and slab regions 510 and 530. The core region 300 includes a first low concentration doped region 310, a second low concentration doped region 330, and a high concentration doped region 350. The core region 300 is disposed on the semiconductor substrate 100. The high concentration doped region 350 is disposed between the first low concentration doped region 310 and the second low concentration doped region 330. The high concentration doped region 350 includes a first high concentration doped region 351 and a second high concentration doped region.

The first low concentration doping region 310 and the second low concentration doping region 330 may be doped with different types of impurities. For example, the first low-concentration doping region 310 may be doped with a p-type dopant (PTD). When the first low concentration doping region 310 is doped with a P-type impurity (PTD), the second low concentration doping region 330 may be doped with n-type dopant (NTD). For example, the first low concentration doping region 310 may be doped with N-type impurities (NTD). When the first low concentration doping region 310 is doped with an N-type impurity (NTD), the second low concentration doping region 330 may be doped with a P-type impurity (PTD).

In an exemplary embodiment, the high concentration doped region 350 may include a first high concentration doped region 351 and a second high concentration doped region 353. The first high concentration doped region 351 is disposed between the first low concentration doped region 310 and the second low concentration doped region 330 and may contact the first low concentration doped region 310. The second high concentration doped region 353 is disposed between the first high concentration doped region 351 and the second low concentration doped region 330 and may contact the second low concentration doped region 330. The first high concentration doped region 351 and the second high concentration doped region 353 may contact each other.

The high concentration doped region 350 includes a first high concentration doped region 351 and a second high concentration doped region 353. The first high concentration doped region 351 and the second high concentration doped region 353 may be doped with different types of impurities. For example, the first high concentration doping region 351 may be doped with a P-type impurity (PTD). When the first high concentration doped region 351 is doped with a P-type impurity (PTD), the second high concentration doped region 353 may be doped with an N-type impurity (NTD). For example, the first high concentration doping region 351 may be doped with an N-type impurity NTD. When the first high concentration doping region 351 is doped with an N-type impurity (NTD), the second high concentration doping region 353 may be doped with a P-type impurity (PTD).

In the exemplary embodiment, the first low concentration doping region 310, the first high concentration doping region 351, the second high concentration doping region 353 and the second low concentration doping region 330 included in the core region 300 are Is disposed in the first direction D1 and the second low concentration doped region 330 may contact the semiconductor substrate 100.

When a reverse bias voltage (RBV) is applied between the first low concentration doping region 310 and the second low concentration doping region 330, the high concentration doping region 350 is included based on the reverse bias voltage RBV. The width of the depletion region (DR) can be adjusted. For example, when the first low concentration doped region 310 is doped with a P-type impurity (PTD), the second low concentration doped region 330 may be doped with an N-type impurity (NTD). In this case, the voltage applied to the first low concentration doped region 310 may be lower than the voltage applied to the second low concentration doped region 330. For example, when the first low concentration doped region 310 is doped with an N-type impurity NTD, the second low concentration doped region 330 may be doped with a P-type impurity PTD. In this case, the voltage applied to the first low concentration doped region 310 may be higher than the voltage applied to the second low concentration doped region 330.

The slab regions 510 and 530 contact the core region 300 and are disposed on the semiconductor substrate 100. The slab regions 510 and 530 may include a first slab region 510 and a second slab region 530. The first slab region 510 and the second slab region 530 may be doped with different types of impurities. For example, the first slab region 510 may be doped with P-type impurity (PTD). When the first slab region 510 is doped with P-type impurity PTD, the second slap region 530 may be doped with N-type impurity NTD.

In an exemplary embodiment, the core region 300 may act as a waveguide for optical signals.

The all-optical converter 10 has a high concentration doping region 350 disposed between the first low concentration doping region 310, the second low concentration doping region 330, and the first low concentration doping region 310 and the second low concentration doping region 330. ). When a reverse bias voltage RBV is applied between the first low concentration doped region 310 and the second low concentration doped region 330, the width of the depletion region DR included in the high concentration doped region 350 may be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted. The all-optical converter 10 according to the present invention can increase the operating speed of the system and reduce power consumption.

2 is a cross-sectional view illustrating an example of a core region included in the all-optical converter of FIG. 1.

 Referring to FIG. 2, the core region 300a may include low concentration doping regions 310 and 330 and high concentration doping regions 350. The low concentration doped regions 310 and 330 may include a first low concentration doped region 310 and a second low concentration doped region 330, and the high concentration doped regions 350 may include a first high concentration doped region 351 and a second. A high concentration doped region 353 may be included.

For example, the first low concentration doping region 310 may be doped with a P-type impurity (PTD), and the first low concentration doping region 310 may be a low concentration p-doping region (LPR). ). The second low concentration doped region 330 may be doped with an N-type impurity (NTD), and the second low concentration doped region 330 may be a low concentration n-doping region (LNR). . The first high concentration doped region 351 may be doped with a P-type impurity (PTD), and the first high concentration doped region 351 may be a high concentration p-doping region (HPR). . The second high concentration doped region 353 may be doped with an N-type impurity (NTD), and the second high concentration doped region 353 may be a high concentration n-doping region (HNR). .

The first high concentration doped region 351 is disposed between the first low concentration doped region 310 and the second low concentration doped region 330 and may contact the first low concentration doped region 310. The second high concentration doped region 353 is disposed between the first high concentration doped region 351 and the second low concentration doped region 330 and may contact the second low concentration doped region 330. The first high concentration doped region 351 and the second high concentration doped region 353 may contact each other.

For example, the lowermost layer of the core region 300a based on the first direction D1 may be the second low concentration doped region 330. The second low concentration doping region 330 may be doped with an N-type impurity (NTD). The second high concentration doped region 353 may be disposed on the second low concentration doped region 330. The second high concentration doped region 353 may contact the second low concentration doped region 330. The second high concentration doped region 353 may be doped with N-type impurities (NTD). The first high concentration doped region 351 may be disposed on the second high concentration doped region 353. The first high concentration doped region 351 may contact the second high concentration doped region 353. The first high concentration doped region 351 may be doped with a P-type impurity (PTD). The first low concentration doping region 310 may be disposed on the first high concentration doping region 351. The first low concentration doping region 310 may contact the first high concentration doping region 351. The first low-concentration doping region 310 may be doped with P-type impurity (PTD).

In an exemplary embodiment, the impurity concentration of the first low concentration doping region 310 is lower than the impurity concentration of the first high concentration doping region 351, and the impurity concentration of the second low concentration doping region 330 is the second high concentration doping region. It may be lower than the impurity concentration of (353).

In an exemplary embodiment, the impurity concentration of the first low concentration doped region 310 may be lower than the impurity concentration of the high concentration doped region 350. When the impurity concentration in the high concentration doped region 350 is high, the density of carriers included in the high concentration doped region 350 may be high. When the carrier density is high, transmission of an optical signal can be prevented. For example, the first low concentration doping region 310 may be doped with P-type impurity (PTD). In this case, the first high concentration doped region 351 may have more P-type impurities (PTD) than the first low concentration doped region 310. When the P-type impurity PTD is high in the first high-concentration doping region 351, transmission of an optical signal through the first high-concentration doping region 351 may be prevented. For example, the second low concentration doping region 330 may be doped with N-type impurities (NTD). In this case, the second high-concentration doping region 353 may have more N-type impurities (NTD) than the second low-concentration doping region 330. When the second high-concentration doping region 353 has a large amount of N-type impurities NTD, transmission of an optical signal through the second high-concentration doping region 353 may be prevented.

When a reverse bias voltage RBV is applied between the first low concentration doped region 310 and the second low concentration doped region 330, a depletion region included in the high concentration doped region 350 based on the reverse bias voltage RBV ( DR) can be adjusted in width. For example, when the first low concentration doped region 310 is doped with a P-type impurity (PTD), the second low concentration doped region 330 may be doped with an N-type impurity (NTD). The voltage applied to the first low concentration doped region 310 may be lower than the voltage applied to the second low concentration doped region 330. A depletion region DR may be formed in the high concentration doped region 350 by the reverse bias voltage RBV applied between the first low concentration doped region 310 and the second low concentration doped region 330. When a bias voltage is applied, the width of the depletion region DR included in the high concentration doping region 350 can be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted.

In an exemplary embodiment, when the first low concentration doped region 310 is doped with a blood-type impurity (PTD), the first high concentration doped region 351 may be doped with a blood-type impurity (PTD). In another embodiment, when the second low concentration doped region 330 is doped with an N-type impurity NTD, the second high concentration doped region 353 may be doped with an N-type impurity NTD.

When a reverse bias voltage RBV is applied between the first low concentration doped region and the second low concentration doped region included in the all-optical converter, the width of the depletion region included in the high concentration doped region can be adjusted. When the width of the depletion region is adjusted, an optical signal transmitted through the depletion region can be adjusted. The all-optical converter according to the present invention can increase the operating speed of the system and reduce power consumption.

3 is a cross-sectional view illustrating another example of the core region included in the all-optical converter of FIG. 1.

Referring to FIG. 3, the core region 300b may include low concentration doping regions 310 and 330 and high concentration doping regions 350. The low concentration doped regions 310 and 330 may include a first low concentration doped region 310 and a second low concentration doped region 330, and the high concentration doped regions 350 may include a first high concentration doped region 351 and a second. A high concentration doped region 353 may be included.

For example, the first low concentration doping region 310 may be doped with an N-type impurity (NTD), and the first low concentration doping region 310 may be a low concentration N-type doping region (LNR). The second low concentration doped region 330 may be doped with a P-type impurity (PTD), and the second low concentration doped region 330 may be a low concentration doped-type doped region (LPR). The first high concentration doping region 351 may be doped with an N-type impurity (NTD), and the first high concentration doping region 351 may be a high concentration N-type doping region (HNR). The second high concentration doped region 353 may be doped with a P-type impurity (PTD), and the second high concentration doped region 353 may be a high concentration doped-type doped region (HPR).

For example, the bottom layer of the core region 300b based on the first direction D1 may be the second low concentration doped region 330. The second low-concentration doping region 330 may be doped with P-type impurity (PTD). The second high concentration doped region 353 may be disposed on the second low concentration doped region 330. The second high concentration doped region 353 may contact the second low concentration doped region 330. The second high concentration doped region 353 may be doped with P-type impurity (PTD). The first high concentration doped region 351 may be disposed on the second high concentration doped region 353. The first high concentration doped region 351 may contact the second high concentration doped region 353. The first high concentration doping region 351 may be doped with an N-type impurity (NTD). The first low concentration doping region 310 may be disposed on the first high concentration doping region 351. The first low concentration doping region 310 may contact the first high concentration doping region 351. The first low concentration doping region 310 may be doped with an N-type impurity (NTD).

In an exemplary embodiment, the impurity concentration of the first low concentration doped region 310 may be lower than the impurity concentration of the high concentration doped region 350. When the impurity concentration in the high concentration doped region 350 is high, the density of carriers included in the high concentration doped region 350 may be high. When the carrier density is high, transmission of an optical signal can be prevented. For example, the first low concentration doping region 310 may be doped with an N-type impurity (NTD). In this case, the first high-concentration doping region 351 may have more N-type impurities (NTD) than the first low-concentration doping region 310. When the N-type impurity NTD is high in the first high-concentration doping region 351, transmission of an optical signal through the first high-concentration doping region 351 may be prevented. For example, the second low-concentration doping region 330 may be doped with P-type impurity (PTD). In this case, the second high concentration doped region 353 may have more P-type impurities (PTD) than the second low concentration doped region 330. When the second high-concentration doped region 353 has a large amount of P-type impurities (PTD), transmission of an optical signal through the second high-concentration doped region 353 may be prevented.

When a reverse bias voltage RBV is applied between the first low concentration doped region 310 and the second low concentration doped region 330, a depletion region included in the high concentration doped region 350 based on the reverse bias voltage RBV ( DR) can be adjusted in width. For example, when the first low concentration doped region 310 is doped with an N-type impurity NTD, the second low concentration doped region 330 may be doped with a P-type impurity PTD. The voltage applied to the first low concentration doped region 310 may be higher than the voltage applied to the second low concentration doped region 330. A depletion region DR may be formed in the high concentration doped region 350 by the reverse bias voltage RBV applied between the first low concentration doped region 310 and the second low concentration doped region 330. When a bias voltage is applied, the width of the depletion region DR included in the high concentration doping region 350 can be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted.

In an exemplary embodiment, when the first low concentration doping region 310 is doped with an N-type impurity NTD, the first high concentration doping region 351 may be doped with an N-type impurity NTD. In another embodiment, when the second low-concentration doped region 330 is doped with a P-type impurity (PTD), the second high-concentration doped region 353 may be doped with a P-type impurity (PTD).

In an exemplary embodiment, an operating voltage may be applied between the first low concentration doped region 310 and the second low concentration doped region 330.

In an exemplary embodiment, the width of the depletion region DR included in the core region 300b may be adjusted based on the operating voltage.

4 is a view for explaining a case in which the ground voltage is applied to the all-optical converter of FIG. 1.

Referring to FIG. 4, the all-optical converter 10 includes a semiconductor substrate 100, a core region 300, and slab regions 510 and 530. The core region 300 includes a first low concentration doped region 310, a second low concentration doped region 330, and a high concentration doped region 350. The core region 300 is disposed on the semiconductor substrate 100. The high concentration doped region 350 is disposed between the first low concentration doped region 310 and the second low concentration doped region 330. The high concentration doped region 350 includes a first high concentration doped region 351 and a second high concentration doped region 353.

When a bias voltage is applied between the first low concentration doped region 310 and the second low concentration doped region 330, the width DW of the depletion region 352 included in the high concentration doped region 350 is based on the bias voltage. Can be adjusted. In an exemplary embodiment, when the operating voltage applied between the first low concentration doped region 310 and the second low concentration doped region 330 is a ground voltage, the width DW of the depletion region 352 is a high concentration doped region. It may be smaller than the width (HDW) of (350).

The width HDW of the high concentration doped region 350 may correspond to the length of the width of the first high concentration doped region 351 and the width of the second high concentration doped region 353. For example, when the first high concentration doped region 351 is doped with a P-type impurity (PTD), and the second high concentration doped region 353 is doped with an N-type impurity (NTD), the first high concentration doped region 351 ) May be the width of the high-concentration doped-type doped region HPR, and the width of the second high-concentration doped region 353 may be the width of the high-concentration doped-type doped region HNR. For example, when the first high concentration doped region 351 is doped with N-type impurity NTD, and the second high concentration doped region 353 is doped with P-type impurity PTD, the first high concentration doped region 351 ) May be the width of the high concentration N-type doped region HNR, and the width of the second high concentration doped region 353 may be the width of the high concentration doped-type doped region HPR.

When a reverse bias voltage RBV is applied between the first low concentration doped region 310 and the second low concentration doped region 330, the width DW of the depletion region 352 may increase. When the operating voltage applied between the first low concentration doping region 310 and the second low concentration doping region 330 is a ground voltage, the width DW of the depletion region 352 is the width HDHD of the high concentration doping region 350. It can be smaller.

When a reverse bias voltage RBV is applied between the first low concentration doped region and the second low concentration doped region included in the all-optical converter, the width of the depletion region included in the high concentration doped region can be adjusted. When the width of the depletion region is adjusted, an optical signal transmitted through the depletion region can be adjusted. The all-optical converter according to the present invention can increase the operating speed of the system and reduce power consumption.

5 is a view for explaining a case in which a reverse bias voltage is applied to the all-optical converter of FIG. 1.

Referring to FIG. 5, the all-optical converter 10 includes a semiconductor substrate 100, a core region 300, and slab regions 510 and 530. The core region 300 includes a first low concentration doped region 310, a second low concentration doped region 330, and a high concentration doped region 350. The high concentration doped region 350 includes a first high concentration doped region 351 and a second high concentration doped region 353.

When a reverse bias voltage RBV is applied between the first low concentration doped region 310 and the second low concentration doped region 330, a depletion region included in the high concentration doped region 350 based on the reverse bias voltage RBV ( The width DW of 352) may be adjusted. For example, when the first low concentration doped region 310 is doped with an N-type impurity NTD, the second low concentration doped region 330 may be doped with a P-type impurity PTD. The voltage applied to the first low concentration doped region 310 may be higher than the voltage applied to the second low concentration doped region 330. A depletion region 352 may be formed in the high concentration doping region 350 by a reverse bias voltage RBV applied between the first low concentration doping region 310 and the second low concentration doping region 330. When the reverse bias voltage RBV is applied, the width DW of the depletion region 352 included in the high concentration doping region 350 may be adjusted. When the width DW of the depletion region 352 is adjusted, an optical signal transmitted through the depletion region 352 may be adjusted.

In an exemplary embodiment, when the operating voltage is the reverse bias voltage RBV, the width DW of the depletion region 352 may increase as the reverse bias voltage RBV increases.

In an exemplary embodiment, the optical loss of the core region 300 may fluctuate as the width of the depletion region 352 fluctuates.

In an exemplary embodiment, the intensity of the transmitted optical signal may be adjusted as the optical loss of the core region 300 fluctuates.

6 is a view showing the widths of the core region and the slab region included in the all-optical converter of FIG. 1.

Referring to FIG. 6, the all-optical converter 10 includes the semiconductor substrate 100, the core region 300, and the slab regions 510 and 530. In an exemplary embodiment, the width CW of the core region 300 may be greater than the width SW of the slab regions 510 and 530. The width CW of the core region 300 may be a length from the semiconductor substrate 100 to the top of the core region 300 based on the first direction D1. The core region 300 may include low concentration doping regions 310 and 330 and high concentration doping regions 350. The low concentration doped regions 310 and 330 may include a first low concentration doped region 310 and a second low concentration doped region 330, and the high concentration doped regions 350 may include a first high concentration doped region 351 and a second. A high concentration doped region 353 may be included.

For example, the width CW of the core region 300 may be a sum of the widths of the low concentration doped regions 310 and 330 and the width HDW of the high concentration doped regions 350. The width of the low concentration doped regions 310 and 330 may be the length of the first direction D1 of the low concentration doped regions 310 and 330. The width HDW of the high concentration doped region 350 may be the first direction D1 length of the high concentration doped region 350. The width of the low concentration doped regions 310 and 330 may be a value of the width of the first low concentration doped region 310 and the second low concentration doped regions 330. The width of the first low-concentration doped region 310 may be the first direction D1 length of the first low-concentration doped region 310. The width of the second low-concentration doped region 330 may be the length of the second low-concentration doped region 330 in the first direction D1. The width HDW of the high concentration doping region 350 may be a sum of the width of the first high concentration doping region 351 and the width of the second high concentration doping region 353. The width of the first high-concentration doped region 351 may be the length of the first high-concentration doped region 351 in the first direction D1. The width of the second high-concentration doped region 353 may be the first direction D1 length of the second high-concentration doped region 353. The width SW of the slab regions 510 and 530 may be the length of the first direction D1 of the slab regions 510 and 530.

In an exemplary embodiment, the semiconductor film included in the all-optical converter 10 may be implemented as one selected from silicon (Si), germanium (Ge), gallium-arsenide (GaAs), and combinations thereof.

7 is a cross-sectional view showing a vertical structure of an all-optical converter according to an embodiment of the present invention.

Referring to FIG. 7, the core region 400 may include low concentration doped regions 410 and 430 and high concentration doped regions 450. The low concentration doped regions 410 and 430 may include a first low concentration doped region 410 and a second low concentration doped region 430, and the high concentration doped regions 450 may include a first high concentration doped region 451 and a second. A high concentration doped region 453 may be included.

The first high concentration doped region 451 is disposed between the first low concentration doped region 410 and the second low concentration doped region 430 and may contact the first low concentration doped region 410. The second high concentration doped region 453 is disposed between the first high concentration doped region 451 and the second low concentration doped region 430 and may contact the second low concentration doped region 430. The first high concentration doped region 451 and the second high concentration doped region 453 may contact each other.

In an exemplary embodiment, the first low concentration doping region 410, the first high concentration doping region 451, the second high concentration doping region 453 and the second low concentration doping region 430 included in the core region 400 are May be disposed in a second direction D2 perpendicular to the first direction D1.

For example, the rightmost side of the core region 400 based on the second direction D2 may be the second low-concentration doped region 430. The second low concentration doping region 430 may be doped with N-type impurities (NTD). The second high concentration doped region 453 may be disposed on the left side of the second low concentration doped region 430. The second high concentration doped region 453 may contact the second low concentration doped region 430. The second high concentration doped region 453 may be doped with N-type impurities (NTD). The first high concentration doped region 451 may be disposed on the left side of the second high concentration doped region 453. The first high concentration doped region 451 may contact the second high concentration doped region 453. The first high-concentration doped region 451 may be doped with P-type impurity (PTD). The first low concentration doping region 410 may be disposed on the left side of the first high concentration doping region 451. The first low-concentration doped region 410 may contact the first high-concentration doped region 451. The first low-concentration doping region 410 may be doped with P-type impurity (PTD).

In an exemplary embodiment, the impurity concentration of the first low concentration doped region 410 may be lower than the impurity concentration of the high concentration doped region 450. When the impurity concentration of the high concentration doped region 450 is high, the density of carriers included in the high concentration doped region 450 may be high. When the carrier density is high, transmission of an optical signal can be prevented. For example, the first low-concentration doping region 410 may be doped with P-type impurity (PTD). In this case, the first high concentration doped region 451 may have more P-type impurities (PTD) than the first low concentration doped region 410. If the first high-concentration doped region 451 has a large amount of P-type impurities (PTD), transmission of an optical signal through the first high-concentration doped region 451 may be prevented. For example, the second low concentration doping region 430 may be doped with N-type impurities (NTD). In this case, the second high concentration doped region 453 may have more N-type impurities (NTD) than the second low concentration doped region 430. When the second high-concentration doping region 453 has a large amount of N-type impurities NTD, transmission of an optical signal through the second high-concentration doping region 453 can be prevented.

When a reverse bias voltage RBV is applied between the first low concentration doped region 410 and the second low concentration doped region 430, a depletion region included in the high concentration doped region 450 based on the reverse bias voltage RBV ( DR) can be adjusted in width. For example, when the first low concentration doped region 410 is doped with a P-type impurity (PTD), the second low concentration doped region 430 may be doped with an N-type impurity (NTD). The voltage applied to the first low concentration doped region 410 may be lower than the voltage applied to the second low concentration doped region 430. A depletion region DR may be formed in the high concentration doped region 450 by the reverse bias voltage RBV applied between the first low concentration doped region 410 and the second low concentration doped region 430. When a bias voltage is applied, the width of the depletion region DR included in the high concentration doped region 450 can be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted.

In an exemplary embodiment, when the first low concentration doped region 410 is doped with a blood-type impurity (PTD), the first high concentration doped region 451 may be doped with a blood-type impurity (PTD). In another embodiment, when the second low concentration doped region 430 is doped with an N-type impurity NTD, the second high concentration doped region 453 may be doped with an N-type impurity NTD.

8 is a cross-sectional view illustrating an example of a core region included in the all-optical converter of FIG. 7.

Referring to FIG. 8, the core region 400a may include low concentration doped regions 410 and 430 and high concentration doped regions 450. The low concentration doped regions 410 and 430 may include a first low concentration doped region 410 and a second low concentration doped region 430, and the high concentration doped regions 450 may include a first high concentration doped region 451 and a second. A high concentration doped region 453 may be included.

For example, the first low concentration doped region 410 may be doped with a P-type impurity (PTD), and the first low concentration doped region 410 may be a low concentration doped-type doped region (LPR). The second low concentration doped region 430 may be doped with an N-type impurity (NTD), and the second low concentration doped region 430 may be a low concentration N-type doped region (LNR). The first high concentration doped region 451 may be doped with a P-type impurity (PTD), and the first high concentration doped region 451 may be a high concentration doped-type doped region (HPR). The second high concentration doped region 453 may be doped with an N-type impurity (NTD), and the second high concentration doped region 453 may be a high concentration N-type doped region (HNR).

For example, the rightmost side of the core region 400a based on the second direction D2 may be the second low-concentration doped region 430. The second low concentration doping region 430 may be doped with N-type impurities (NTD). The second high concentration doped region 453 may be disposed on the left side of the second low concentration doped region 430. The second high concentration doped region 453 may contact the second low concentration doped region 430. The second high concentration doped region 453 may be doped with N-type impurities (NTD). The first high concentration doped region 451 may be disposed on the left side of the second high concentration doped region 453. The first high concentration doped region 451 may contact the second high concentration doped region 453. The first high-concentration doped region 451 may be doped with P-type impurity (PTD). The first low concentration doping region 410 may be disposed on the left side of the first high concentration doping region 451. The first low-concentration doped region 410 may contact the first high-concentration doped region 451. The first low-concentration doping region 410 may be doped with P-type impurity (PTD).

In an exemplary embodiment, the impurity concentration of the first low concentration doped region 410 may be lower than the impurity concentration of the high concentration doped region 450. When the impurity concentration of the high concentration doped region 450 is high, the density of carriers included in the high concentration doped region 450 may be high. When the carrier density is high, transmission of an optical signal can be prevented. For example, the first low-concentration doping region 410 may be doped with P-type impurity (PTD). In this case, the first high concentration doped region 451 may have more P-type impurities (PTD) than the first low concentration doped region 410. If the first high-concentration doped region 451 has a large amount of P-type impurities (PTD), transmission of an optical signal through the first high-concentration doped region 451 may be prevented. For example, the second low concentration doping region 430 may be doped with N-type impurities (NTD). In this case, the second high concentration doped region 453 may have more N-type impurities (NTD) than the second low concentration doped region 430. When the second high-concentration doping region 453 has a large amount of N-type impurities NTD, transmission of an optical signal through the second high-concentration doping region 453 can be prevented.

When a reverse bias voltage RBV is applied between the first low concentration doped region 410 and the second low concentration doped region 430, a depletion region included in the high concentration doped region 450 based on the reverse bias voltage RBV ( DR) can be adjusted in width. For example, when the first low concentration doped region 410 is doped with a P-type impurity (PTD), the second low concentration doped region 430 may be doped with an N-type impurity (NTD). The voltage applied to the first low concentration doped region 410 may be lower than the voltage applied to the second low concentration doped region 430. A depletion region DR may be formed in the high concentration doped region 450 by the reverse bias voltage RBV applied between the first low concentration doped region 410 and the second low concentration doped region 430. When a bias voltage is applied, the width of the depletion region DR included in the high concentration doped region 450 can be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted.

In an exemplary embodiment, when the first low concentration doped region 410 is doped with a blood-type impurity (PTD), the first high concentration doped region 451 may be doped with a blood-type impurity (PTD). In another embodiment, when the second low concentration doped region 430 is doped with an N-type impurity NTD, the second high concentration doped region 453 may be doped with an N-type impurity NTD.

When a reverse bias voltage RBV is applied between the first low concentration doped region and the second low concentration doped region included in the all-optical converter, the width of the depletion region included in the high concentration doped region can be adjusted. When the width of the depletion region is adjusted, an optical signal transmitted through the depletion region can be adjusted. The all-optical converter according to the present invention can increase the operating speed of the system and reduce power consumption.

9 is a cross-sectional view illustrating another example of the core region included in the all-optical converter of FIG. 7.

Referring to FIG. 9, the core region 400b may include low concentration doping regions 410 and 430 and high concentration doping regions 450. The low concentration doped regions 410 and 430 may include a first low concentration doped region 410 and a second low concentration doped region 430, and the high concentration doped regions 450 may include a first high concentration doped region 451 and a second. A high concentration doped region 453 may be included.

For example, the first low concentration doping region 410 may be doped with an N-type impurity (NTD), and the first low concentration doping region 410 may be a low concentration N-type doping region (LNR). The second low concentration doped region 430 may be doped with a P-type impurity (PTD), and the second low concentration doped region 430 may be a low concentration doped-type doped region (LPR). The first high concentration doping region 451 may be doped with an N-type impurity (NTD), and the first high concentration doping region 451 may be a high concentration N-type doping region (HNR). The second high concentration doped region 453 may be doped with a P-type impurity (PTD), and the second high concentration doped region 453 may be a high concentration doped-type doped region (HPR).

For example, the rightmost side of the core region 400b based on the second direction D2 may be the second low-concentration doped region 430. The second low-concentration doping region 430 may be doped with P-type impurity (PTD). The second high concentration doped region 453 may be disposed on the left side of the second low concentration doped region 430. The second high concentration doped region 453 may contact the second low concentration doped region 430. The second high concentration doped region 453 may be doped with P-type impurity (PTD). The first high concentration doped region 451 may be disposed on the left side of the second high concentration doped region 453. The first high concentration doped region 451 may contact the second high concentration doped region 453. The first high concentration doping region 451 may be doped with an N-type impurity (NTD). The first low concentration doping region 410 may be disposed on the left side of the first high concentration doping region 451. The first low-concentration doped region 410 may contact the first high-concentration doped region 451. The first low concentration doping region 410 may be doped with an N-type impurity (NTD).

In an exemplary embodiment, the impurity concentration of the first low concentration doped region 410 may be lower than the impurity concentration of the high concentration doped region 450. When the impurity concentration of the high concentration doped region 450 is high, the density of carriers included in the high concentration doped region 450 may be high. When the carrier density is high, transmission of an optical signal can be prevented. For example, the first low concentration doping region 410 may be doped with an N-type impurity (NTD). In this case, the first high concentration doped region 451 may have more N-type impurities (NTD) than the first low concentration doped region 410. When the N-type impurity NTD is high in the first high-concentration doping region 451, transmission of an optical signal through the first high-concentration doping region 451 may be prevented. For example, the second low-concentration doping region 430 may be doped with P-type impurity (PTD). In this case, the second high concentration doped region 453 may have more P-type impurities (PTD) than the second low concentration doped region 430. When the second high-concentration doped region 453 has a large amount of P-type impurities (PTD), transmission of an optical signal through the second high-concentration doped region 453 can be prevented.

When a reverse bias voltage RBV is applied between the first low concentration doped region 410 and the second low concentration doped region 430, a depletion region included in the high concentration doped region 450 based on the reverse bias voltage RBV ( DR) can be adjusted in width. For example, when the first low concentration doped region 410 is doped with an N-type impurity NTD, the second low concentration doped region 430 may be doped with a P-type impurity PTD. The voltage applied to the first low concentration doped region 410 may be higher than the voltage applied to the second low concentration doped region 430. A depletion region DR may be formed in the high concentration doped region 450 by the reverse bias voltage RBV applied between the first low concentration doped region 410 and the second low concentration doped region 430. When a bias voltage is applied, the width of the depletion region DR included in the high concentration doped region 450 can be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted.

In an exemplary embodiment, when the first low concentration doping region 410 is doped with an N-type impurity NTD, the first high concentration doping region 451 may be doped with an N-type impurity NTD. In another embodiment, when the second low concentration doped region 430 is doped with a blood-type impurity (PTD), the second high concentration doped region 453 may be doped with a blood-type impurity (PTD).

FIG. 10 is a view for explaining a case in which a ground voltage is applied to the all-optical converter of FIG. 7, and FIG. 11 is a view for explaining a case in which a reverse bias voltage (RBV) is applied to the all-optical converter of FIG. 7.

10 and 11, the all-optical converter 15 includes a semiconductor substrate 100, a core region 400, and slab regions 510 and 530. The core region 400 includes a first low concentration doped region 410, a second low concentration doped region 430, and a high concentration doped region 450. The high concentration doped region 450 includes a first high concentration doped region 451 and a second high concentration doped region 453.

In an exemplary embodiment, an operating voltage may be applied between the first low concentration doped region 410 and the second low concentration doped region 430. When a reverse bias voltage RBV is applied between the first low concentration doped region 410 and the second low concentration doped region 430, a depletion region included in the high concentration doped region 450 based on the reverse bias voltage RBV ( The width DW of 452 may be adjusted.

For example, when the first low concentration doped region 410 is doped with an N-type impurity NTD, the second low concentration doped region 430 may be doped with a P-type impurity PTD. The voltage applied to the first low concentration doped region 410 may be higher than the voltage applied to the second low concentration doped region 430. A depletion region 452 may be formed in the high concentration doping region 450 by the reverse bias voltage RBV applied between the first low concentration doping region 410 and the second low concentration doping region 430. When the reverse bias voltage RBV is applied, the width DW of the depletion region 452 included in the high concentration doped region 450 may be adjusted. When the width DW of the depletion region 452 is adjusted, an optical signal transmitted through the depletion region 452 may be adjusted.

In an exemplary embodiment, when the operating voltage is the reverse bias voltage RBV, the width DW of the depletion region 452 may increase as the reverse bias voltage RBV increases.

12 is a block diagram showing an optical transmission conversion apparatus according to embodiments of the present invention.

Referring to FIGS. 1 and 12, the optical transmission conversion device 25 includes an all-optical converter 10. The all-optical converter 10 includes a semiconductor substrate 100, a core region 300, and slab regions 510 and 530. The core region 300 includes a first low concentration doped region 310, a second low concentration doped region 330, and a high concentration doped region 350. The core region 300 is disposed on the semiconductor substrate 100. The high concentration doped region 350 is disposed between the first low concentration doped region 310 and the second low concentration doped region 330. The high concentration doped region 350 includes a first high concentration doped region 351 and a second high concentration doped region 353.

The first low concentration doping region 310 and the second low concentration doping region 330 may be doped with different types of impurities. For example, the first low-concentration doping region 310 may be doped with P-type impurity (PTD). When the first low concentration doped region 310 is doped with a P-type impurity (PTD), the second low concentration doped region 330 may be doped with an N-type impurity (NTD). For example, the first low concentration doping region 310 may be doped with N-type impurities (NTD). When the first low concentration doping region 310 is doped with an N-type impurity (NTD), the second low concentration doping region 330 may be doped with a P-type impurity (PTD).

In an exemplary embodiment, the high concentration doped region 350 may include a first high concentration doped region 351 and a second high concentration doped region 353. The first high concentration doped region 351 is disposed between the first low concentration doped region 310 and the second low concentration doped region 330 and may contact the first low concentration doped region 310. The second high concentration doped region 353 is disposed between the first high concentration doped region 351 and the second low concentration doped region 330 and may contact the second low concentration doped region 330. The first high concentration doped region 351 and the second high concentration doped region 353 may contact each other.

The high concentration doped region 350 includes a first high concentration doped region 351 and a second high concentration doped region 353. The first high concentration doped region 351 and the second high concentration doped region 353 may be doped with different types of impurities. For example, the first high concentration doping region 351 may be doped with a P-type impurity (PTD). When the first high concentration doped region 351 is doped with a P-type impurity (PTD), the second high concentration doped region 353 may be doped with an N-type impurity (NTD). For example, the first high concentration doping region 351 may be doped with an N-type impurity NTD. When the first high concentration doping region 351 is doped with an N-type impurity (NTD), the second high concentration doping region 353 may be doped with a P-type impurity (PTD).

In an exemplary embodiment, the core region 400 is disposed in the first direction and the second low concentration doped region 330 can contact the semiconductor substrate 100.

When a reverse bias voltage (RBV) is applied between the first low concentration doping region 310 and the second low concentration doping region 330, the high concentration doping region 350 is included based on the reverse bias voltage RBV. The width DW of the depletion region 452 to be adjusted may be adjusted. For example, when the first low concentration doped region 310 is doped with a P-type impurity (PTD), the second low concentration doped region 330 may be doped with an N-type impurity (NTD). In this case, the voltage applied to the first low concentration doped region 310 may be lower than the voltage applied to the second low concentration doped region 330. For example, when the first low concentration doped region 310 is doped with an N-type impurity NTD, the second low concentration doped region 330 may be doped with a P-type impurity PTD. In this case, the voltage applied to the first low concentration doped region 310 may be higher than the voltage applied to the second low concentration doped region 330.

The slab regions 510 and 530 contact the core region 400 and are disposed on the semiconductor substrate 100. The slab regions 510 and 530 may include a first slab region 510 and a second slab region 530. The first slab region 510 and the second slab region 530 may be doped with different types of impurities. For example, the first slab region 510 may be doped with P-type impurity (PTD). When the first slab region 510 is doped with P-type impurity PTD, the second slap region 530 may be doped with N-type impurity NTD.

The all-optical converter 10 has a high concentration doping region 350 disposed between the first low concentration doping region 310, the second low concentration doping region 330, and the first low concentration doping region 310 and the second low concentration doping region 330. ). When a reverse bias voltage RBV is applied between the first low concentration doped region 310 and the second low concentration doped region 330, the width DW of the depletion region 452 included in the high concentration doped region 350 can be adjusted. have. When the width DW of the depletion region 452 is adjusted, an optical signal transmitted through the depletion region 452 may be adjusted. The all-optical converter 10 according to the present invention can increase the operating speed of the system and reduce power consumption.

13 is a block diagram illustrating a memory system including the optical transmission converter of FIG. 12.

12 and 13, the memory system 20 includes a memory controller 400 and at least one memory device 600. For example, the memory controller 400 and the memory device 600 may be mounted on the motherboard MB. The memory device 600 may be implemented in the form of a memory module, and each memory module MM may be mounted in a socket. The memory controller 400 and the memory device 600 may be connected through an optical channel. The memory controller 400 may include an all-optical conversion device 410, and the memory device 600 may include an optical transmission conversion device 25. The optical transmission conversion device 25 may include an all-optical converter 10. The received optical signal RX_OS transmitted from the memory controller 400 may be transmitted through an optical channel. The received optical signal RX_OS may include optical signals each modulated by using a plurality of wavelength lights. The plurality of wavelength lights may be a laser.

The all-optical converter 10 converts the transmission electrical signal TX_ES into a transmission optical signal based on the transmission electrical signal TX_ES transmitted to the memory controller 400. The transmitted optical signal TX_OS may be transmitted to the memory controller 400 through an optical channel. The all-optical converter 10 has a high concentration doping region 350 disposed between the first low concentration doping region 310, the second low concentration doping region 330, and the first low concentration doping region 310 and the second low concentration doping region 330. ). When a reverse bias voltage RBV is applied between the first low concentration doping region 310 and the second low concentration doping region 330, the width of the depletion region DR included in the high concentration doping region 350 may be adjusted. When the width of the depletion region DR is adjusted, an optical signal transmitted through the depletion region DR may be adjusted. The all-optical converter 10 according to the present invention can increase the operating speed of the system and reduce power consumption.

14 is a block diagram illustrating an example in which an optical transmission conversion device according to embodiments of the present invention is applied to a mobile device.

Referring to FIG. 14, the mobile device 700 may include a processor 710, a memory device 720, a storage device 730, an image sensor 760, a display device 740 and a power supply 750. have. The mobile device 700 may further include ports for communicating with a video card, sound card, memory card, USB device, or other electronic devices.

The processor 710 can perform certain calculations or tasks. According to an embodiment, the processor 710 may be a micro-processor or a central processing unit (CPU). The processor 710 may communicate with the memory device 720, the storage device 730, and the display device 740 through an address bus, a control bus, and a data bus. have. Depending on the embodiment, the processor 710 may also be connected to an expansion bus, such as a Peripheral Component Interconnect (PCI) bus. The memory device 720 may store data necessary for the operation of the mobile device 700. For example, the memory device 720 includes a DRAM (DRAM), a mobile DRAM, an SRAM (SRAM), a PRAM (PRAM), an FRAM (FRAM), an ARAM (RRAM), and / or an MRAM (MRAM). Can be. The storage device 730 may include a solid state drive, a hard disk drive, a CD-ROM, and the like. The mobile device 700 may further include input means such as a keyboard, keypad, mouse, and output means such as a printer. The power supply 750 may supply an operating voltage required for the operation of the mobile device 700.

The image sensor 760 may be connected to the processor 710 through the buses or other communication links to perform communication. The image sensor 900 may be integrated on one chip together with the processor 710, or may be integrated on different chips.

The components of the mobile device 700 may be implemented in various types of packages. For example, at least some of the components of the mobile device 700 include Package on Package (PoP), Ball grid arrays (BGAs), Chip scale packages (CSPs), Plastic Leaded Chip Carrier (PLCC), Plastic Dual In-Line Package (PDIP), Die in Waffle Pack, Die in Wafer Form, Chip On Board (COB), Ceramic Dual In-Line Package (CERDIP), Plastic Metric Quad Flat Pack (MQFP), Thin Quad Flatpack (TQFP), Small Outline ( SOIC), Shrink Small Outline Package (SSOP), Thin Small Outline (TSOP), Thin Quad Flatpack (TQFP), System In Package (SIP), Multi Chip Package (MCP), Wafer-level Fabricated Package (WFP), Wafer- It can be mounted using packages such as Level Processed Stack Package (WSP).

Meanwhile, the mobile device 700 should be interpreted as any computing system using a memory system according to embodiments of the present invention. For example, the mobile device 700 may include a digital camera, a mobile phone, a personal digital assistants (PDA), a portable multimedia player (PMP), a smartphone, and the like.

The memory system can include an all-optical converter. When a reverse bias voltage RBV is applied between the first low concentration doped region and the second low concentration doped region included in the all-optical converter, the width of the depletion region included in the high concentration doped region can be adjusted. When the width of the depletion region is adjusted, an optical signal transmitted through the depletion region can be adjusted. The optical signal may be transmitted through an optical channel (OC). The all-optical converter according to the present invention can increase the operating speed of the system and reduce power consumption.

15 is a block diagram illustrating an example of applying a memory system to a computing system according to embodiments of the present invention.

Referring to FIG. 15, the computing system 800 includes a processor 810, an input / output hub 820, an input / output controller hub 830, at least one memory module 840, and a graphics card 850. According to an embodiment, the computing system 800 may include a personal computer (PC), a server computer, a workstation, a laptop, a mobile phone, and a smart phone. , Personal digital assistant (PDA), portable multimedia player (PMP), digital camera, digital TV, digital television, set-top box, music player (Music Player), a portable game console (portable game console), a navigation (Navigation) system, and the like.

The processor 810 can execute various computing functions, such as specific calculations or tasks. For example, the processor 810 may be a microprocessor or a central processing unit (CPU). According to an embodiment, the processor 810 may include a single processor core (Single Core) or a plurality of processor cores (Multi-Core). For example, the processor 1510 may include multi-cores such as dual-core, quad-core, and hexa-core. In addition, although the computing system 800 including one processor 810 is illustrated in FIG. 18, according to an embodiment, the computing system 800 may include a plurality of processors. Further, according to an embodiment, the processor 810 may further include a cache memory located inside or outside.

The processor 810 may include a memory controller 811 that controls the operation of the memory module 840. The memory controller 811 included in the processor 810 may be referred to as an integrated memory controller (IMC). The memory interface between the memory controller 811 and the memory module 840 may be implemented as one channel including a plurality of signal lines or may be implemented as a plurality of channels. Also, one or more memory modules 840 may be connected to each channel. According to an embodiment, the memory controller 811 may be located in the input / output hub 820. The input / output hub 820 including the memory controller 811 may be referred to as a memory controller hub (MCH).

The input / output hub 820 may manage data transmission between devices such as the graphics card 850 and the processor 810. The input / output hub 820 may be connected to the processor 810 through various types of interfaces. For example, the input / output hub 820 and the processor 810 include a Front Side Bus (FSB), a System Bus, a HyperTransport, and a Lightning Data Transport; LDT), QuickPath Interconnect (QPI), and Common System Interface (CSI) can be connected to various standard interfaces.

The input / output hub 820 may provide various interfaces with devices. For example, the input / output hub 820 may include an Accelerated Graphics Port (AGP) interface, Peripheral Component Interface-Express (PCIe), Communication Streaming Architecture (CSA) interface, etc. Can provide

The graphic card 850 may be connected to the input / output hub 820 through AGP or PCIe. The graphic card 850 may control a display device (not shown) for displaying an image. The graphic card 850 may include an internal processor for processing image data and an internal semiconductor memory device. According to an embodiment, the input / output hub 820 may include a graphics device inside the input / output hub 820 together with the graphics card 850 located outside the input / output hub 820, or instead of the graphics card 850. You can. The graphics device included in the input / output hub 820 may be referred to as integrated graphics. Also, the input / output hub 820 including the memory controller and the graphic device may be referred to as a graphics and memory controller hub (GMCH).

The I / O controller hub 830 may perform data buffering and interface arbitration to efficiently operate various system interfaces. The I / O controller hub 830 may be connected to the I / O hub 820 through an internal bus. For example, the I / O hub 820 and the I / O controller hub 830 may be connected through a Direct Media Interface (DMI), a hub interface, an Enterprise Southbridge Interface (ESI), PCIe, or the like. .

The input / output controller hub 830 may provide various interfaces with peripheral devices. For example, the I / O controller hub 830 includes a universal serial bus (USB) port, a serial Advanced Technology Attachment (ATA) port, general purpose input / output (GPIO), and low pin count. It can provide (Low Pin Count; LPC) bus, Serial Peripheral Interface (SPI), PCI, PCIe, etc.

Depending on the embodiment, the processor 810, the input / output hub 820, and the input / output controller hub 830 may be implemented with separate chipsets or integrated circuits, or the processor 810, input / output hub 820, or input / output controller hub, respectively. Two or more components of 830 may be implemented with a single chipset.

The memory system can include an all-optical converter. When a reverse bias voltage RBV is applied between the first low concentration doped region and the second low concentration doped region included in the all-optical converter, the width of the depletion region included in the high concentration doped region can be adjusted. When the width of the depletion region is adjusted, an optical signal transmitted through the depletion region can be adjusted. The optical signal may be transmitted through an optical channel (OC). The all-optical converter according to the present invention can increase the operating speed of the system and reduce power consumption.

The all-optical converter according to embodiments of the present invention and the optical transmission conversion device including the same can increase the operating speed of the system and reduce power consumption, and thus can be applied to various semiconductor devices.

In the above, the present invention has been described with reference to preferred embodiments, but those skilled in the art may variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that you can.

Claims (10)

Semiconductor substrates;
A core region disposed on the semiconductor substrate and including a first low concentration doped region, a second low concentration doped region, and a high concentration doped region disposed between the first low concentration doped region and the second low concentration doped region; And
The slab regions are disposed on the semiconductor substrate in contact with the core region,
The high concentration doping region,
A first high concentration doping region disposed between the first low concentration doping region and the second low concentration doping region to contact the first low concentration doping region, and having the same impurity type as the first low concentration doping region; And
Arranged between the first high concentration doping region and the second low concentration doping region to be in contact with the second low concentration doping region, and having the same impurity type as the second low concentration doping region, and an impurity type different from the first high concentration doping region. A second high concentration doped region having a
The first high concentration doped region and the second high concentration doped region are in contact with each other,
The core region acts as a waveguide for optical signals,
When an operating voltage is applied between the first low-concentration doping region and the second low-concentration doping region, a depletion region is formed at a portion of the high-concentration doping region that is in contact with the first high-concentration doping region Is formed,
The width of the depletion region is adjusted based on the operating voltage,
When the operating voltage is a ground voltage, the width of the depletion region is smaller than the width of the high concentration doped region,
When the operating voltage is a reverse bias voltage, the width of the depletion region increases as the reverse bias voltage increases. delete According to claim 1,
The first low concentration doping region, the first high concentration doping region, the second high concentration doping region, and the second low concentration doping region included in the core region are disposed in a first direction and the second low concentration doping region is the semiconductor substrate. All-optical converter characterized in that the contact. According to claim 3,
The impurity concentration in the first low concentration doped region is lower than the impurity concentration in the first high concentration doped region,
The impurity concentration of the second low concentration doped region is lower than the impurity concentration of the second high concentration doped region,
The first low concentration doped region is doped with a blood-type impurity,
The first high concentration doped region is doped with the blood-type impurity,
The second low concentration doped region is doped with an n-type impurity,
The second high concentration doped region is an all-optical converter, characterized in that doped with the N-type impurities. According to claim 3,
The impurity concentration of the first low concentration doped region and the impurity concentration of the second low concentration doped region are lower than the impurity concentration of the high concentration doped region,
The first low concentration doping region is doped with an n-type impurity,
The first high concentration doped region is doped with the N-type impurity,
The second low concentration doped region is doped with a blood-type impurity,
And wherein the second high concentration doped region is doped with the blood-type impurity. delete delete According to claim 1,
The width of the core region is greater than the width of the slab region,
The semiconductor film included in the all-optical converter is a silicon (Si), germanium (Ge), gallium-arsenide (GaAs), and an all-optical converter, characterized in that implemented in one selected from a combination thereof. According to claim 1,
The first low concentration doping region, the first high concentration doping region, the second high concentration doping region, and the second low concentration doping region included in the core region are disposed in a second direction perpendicular to the first direction,
As the width of the depletion region fluctuates, light loss in the core region fluctuates,
All-optical converter, characterized in that the intensity of the transmitted optical signal is adjusted as the light loss of the core region fluctuates. And an all-optical converter that converts the transmitted electrical signal to a transmitted optical signal based on the transmitted electrical signal,
The all-optical converter,
Semiconductor substrates;
A core region disposed on the semiconductor substrate and including a first low concentration doped region, a second low concentration doped region, and a high concentration doped region disposed between the first low concentration doped region and the second low concentration doped region;
The slab regions are disposed on the semiconductor substrate in contact with the core region,
The high concentration doping region,
A first high concentration doped region disposed between the first low concentration doped region and the second low concentration doped region to contact the first low concentration doped region and having the same impurity type as the first low concentration doped region; And
Arranged between the first high concentration doping region and the second low concentration doping region to be in contact with the second low concentration doping region, and having the same impurity type as the second low concentration doping region, and an impurity type different from the first high concentration doping region. A second high concentration doped region having a
The first high concentration doped region and the second high concentration doped region are in contact with each other,
The core region acts as a waveguide for optical signals,
When an operating voltage is applied between the first low-concentration doping region and the second low-concentration doping region, a depletion region is formed at a portion of the high-concentration doping region that is in contact with the first high-concentration doping region Is formed,
The width of the depletion region is adjusted based on the operating voltage,
When the operating voltage is a ground voltage, the width of the depletion region is smaller than the width of the high concentration doped region,
And when the operating voltage is a reverse bias voltage, the width of the depletion region increases as the reverse bias voltage increases.

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