KR102106036B1 - Static electricity detection substrate and fabricating method thereof - Google Patents

Abstract

The present invention discloses an electrostatic measuring substrate. More specifically, the present invention relates to a static electricity measuring substrate and a method for manufacturing the same, which can easily measure static electricity generated in a chamber during a manufacturing process of a flat panel display device such as a liquid crystal display device.
According to an embodiment of the present invention, by providing a crystallized silicon layer under the static electricity detection pattern formed on the substrate, it is possible to not only improve the measurement sensitivity through the static electricity pass formed thereon, but also to quantify the static electricity level, It is possible to provide a customized static electricity measurement substrate for each sensitivity by adjusting the thickness of the crystallized silicon layer.

Description

STATIC ELECTRICITY DETECTION SUBSTRATE AND FABRICATING METHOD THEREOF}

The present invention relates to an electrostatic measuring substrate, and more particularly, to an electrostatic measuring substrate capable of easily measuring static electricity generated in a chamber during a manufacturing process of a flat panel display device such as a liquid crystal display device and a method for manufacturing the same.

Flat panel display devices such as liquid crystal display, field emission display, plasma display panel, and organic light-emitting diode display (OLED display), etc. Flat Panel Display) is manufactured by repeatedly performing a number of processes such as a cleaning process, a lithography process, an exposure process, a development process, and an etching process on a glass substrate to form a predetermined circuit and a light emitting device.

The above-described flat panel display manufacturing process is performed in a predetermined chamber, and a considerable amount of static electricity may be generated during the process, and the generation of such static electricity causes damage to circuits and light-emitting elements formed on the substrate. Therefore, the static electricity generated in the substrate is measured by using an electrostatic measuring device such as an electrostatic field meter or an electrostatic voltage meter at any time during the process.

1A and 1B are views showing an example of a conventional commercialized static electricity measuring devices.

The conventional static electricity measuring device measures whether or not static electricity is charged on the substrate taken out of the chamber, and the static electricity measuring device of FIG. 1A detects static electricity through the antenna 15 installed in the measuring module 10 and displays the display module 17. The result is displayed, and the static electricity measuring device of FIG. 1B extends from the main body 20 and causes the measurement bar 25 provided at the end of the cable to be adjacent to the region of the substrate 1 to be measured, thereby generating static electricity locally. Is measured. The measurement result can be confirmed through the display module 27 mounted on the main body 20.

However, the above-described static electricity measuring devices can measure only a local area with respect to a large area substrate, and it is difficult to accurately measure the amount of static electricity charged over the entire area. In particular, there was a limitation that measurement was impossible for the substrate located in the chamber.

As a method for overcoming this limitation, Korean Patent Publication No. 10-2013-0009508 discloses a substrate having an electrostatic measuring cell that solves the above-mentioned problem by employing the same substrate as the substrate used for manufacturing the flat panel display device. .

Korea Patent Publication No. 10-2013-0009508 (2013.01.23.) Japanese Patent Application Publication No. 2007-114127 (2007.05.10.)

An object of the present invention is to further improve the measurement sensitivity of the substrate having the above-described electrostatic measurement cell, to quantify the level of static electricity, and to provide a customized static electricity measurement substrate for each sensitivity.

In addition, the present invention has another object to improve the productivity and yield of the substrate by shortening the inspection time by improving the electrode bar structure formed in each measurement cell of the static electricity measuring substrate.

In order to achieve the above object, the static electricity measuring substrate according to the first embodiment of the present invention includes a substrate; A silicon layer formed on the substrate; An electrode bar in which a plurality of cells are formed in a matrix form on the silicon layer; And a plurality of electrode patterns formed to be spaced apart from the electrode bar into the cell and having an antenna pin on one side.

In addition, the static electricity measuring substrate according to the second embodiment of the present invention, the substrate; A silicon layer formed on the substrate; And a plurality of cells defined on the silicon layer, the plurality of cells comprising: a main electrode bar formed in one direction; And one or more opposing electrode bars formed so that one end of the main electrode bar faces at regular intervals.

In addition, a method of manufacturing an electrostatic measuring substrate according to a preferred embodiment of the present invention comprises the steps of: preparing a substrate; Forming a silicon layer on the substrate; Forming a metal layer on the silicon layer; And patterning the metal layer to form an electrode bar in which a plurality of cells are in a matrix form and an electrode pattern spaced apart from the electrode bar and disposed inside the cell.

According to an embodiment of the present invention, by providing a crystallized silicon layer under the static electricity detection pattern formed on the substrate, it is possible to not only improve the measurement sensitivity through the static electricity pass formed thereon, but also to quantify the static electricity level, In addition, it is possible to provide a customized static electricity measurement substrate for each sensitivity by adjusting the thickness of the crystallized silicon layer.

In addition, by improving the electrode bar structure formed in each measurement cell and reducing the total number of cells, there is an effect of shortening the inspection time and improving the productivity and yield of the substrate.

1A and 1B are views showing an example of a conventional commercialized static electricity measuring devices.
2 is a view showing a static electricity measuring substrate according to an embodiment of the present invention, and FIG. 3 is a view showing a cross-sectional view of the III-III 'portion of FIG. 2.
4A and 4B are diagrams illustrating structures of electrode bars and electrode patterns of the static electricity measuring substrate according to the first embodiment of the present invention.
5A to 5E are views illustrating a method of manufacturing an electrostatic measuring substrate according to an embodiment of the present invention.
6 is a plan view showing the structure of one cell in the static electricity measuring substrate according to the second embodiment of the present invention.
7 is a plan view showing a structure of one cell in an electrostatic measuring substrate having a plurality of counter electrode bars and auxiliary electrode bars according to a second embodiment of the present invention.
FIG. 8 is an enlarged view of part X of FIG. 7.
9A to 9E are views showing a method of manufacturing an electrostatic measuring substrate according to an embodiment of the present invention.
10 is a view showing the relationship between the dielectric breakdown voltage with respect to the separation distance of two opposing electrodes in a static electricity measuring substrate according to an embodiment of the present invention and the present invention.

Hereinafter, an electrostatic measuring substrate and a manufacturing method thereof according to a preferred embodiment of the present invention will be described with reference to the drawings.

FIG. 2 is a view showing a static electricity measuring substrate according to a first embodiment of the present invention, and FIG. 3 is a view showing a cross-sectional view of the III-III 'portion of FIG. 2. In FIG. 2, the number of the electrode pattern 140 is enlarged and illustrated so that the shape of the electrode pattern 140 provided on the measurement substrate 100 is explicitly revealed, the number of which is relatively small, and the actual process In the case that the size of one measuring substrate 100 is about 2200 mm × 2500 mm, the electrode patterns 140 provided therein are about 20,000.

2 and 3, the electrostatic measuring substrate 100 of the present invention is a substrate 101, a silicon layer 115 formed on the substrate, and a plurality of cells formed on the silicon layer in a matrix form It includes an electrode bar 130 and a plurality of electrode patterns 140 spaced apart from the electrode bar 130 and formed into a plurality of cells, and an antenna line 141 connected to the electrode pattern 140 by generating static electricity. It is a structure that can determine the location and size of static electricity generated through the damage.

The substrate 101 may be made of an organic or plastic material, and is preferably the same material and size as the substrate used in the manufacturing process of the flat panel display device.

A silicon layer 115 is formed over the entire region of the substrate 101. The silicon layer 115 may be an amorphous silicon (a-Si: H) or a silicon layer crystallized by a low temperature poly silicon (LTPS) crystallization technique.

That is, after depositing amorphous silicon on the substrate 101, an upper layer forming process is performed, or after the amorphous silicon deposition, a dehydrogenation process is performed, followed by a crystallization step to form a crystallized silicon layer. At this time, a low-temperature polycrystalline silicon (LTPS) crystallization technique is used as a method to be applied.

As the low-temperature polycrystalline silicon crystallization technology, the LTPS crystallization technology includes Excimer Laser Annealing (ELA) technology, Continuous Grain Silicon (CGS) technology, and Sequential Lateral Solidification (SLS) technology.

When the silicon layer 115 is charged in the region corresponding to the upper electrode pattern 140 by the generation of static electricity on the substrate, an electrostatic pass is formed, and accordingly, the electrode bar 130 and the electrode pattern 140 by static electricity Liver insulation breakdown is more likely to occur. Here, static electricity generated with respect to the substrate may be generated in a form that is generated on the rear surface of the substrate 101 and is guided to the front surface.

In particular, when the low temperature poly crystallization of the silicon layer 115, the charge charged through the grain boundary according to the crystallization of the silicon layer 115 is more easily between the electrode bar 130 and the electrode pattern 140. As it moves, it serves to supplement the above-described insulation breakdown due to static electricity more easily.

Further, a metal layer is formed over the entire surface of the substrate on the upper portion of the silicon layer 115, and the electrode bar 130 having a plurality of cell structures in a matrix form through a patterning process and a plurality of electrode patterns (in the plurality of cells) 140) is formed. Accordingly, each inner side of the electrode bar 130 and the outer side of the electrode pattern 140 are opposite to each other.

The electrode bars 130 are formed to be the same over the entire area of the same substrate, and each cell may be formed in a rectangular structure of the same size.

 In addition, an electrode pattern 140 having a rectangular structure is formed inside the cell formed by the electrode bar 130, and an antenna pin 141 is formed at a predetermined length on one side of the electrode pattern 140. Here, the electrode patterns 140 have the same area and the lengths of the antenna pins 141 are different from each other, or the areas of the electrode patterns 140 are different from each other and the antenna pins 141 are formed to have the same length. Can be. That is, as illustrated in FIG. 3, the electrode bar 130 and the electrode pattern 140 become two opposite electrodes, and the negative or positive charge charged in the lower silicon layer 115 moves between the two electrodes. It becomes a charge path, and when a static electricity is generated, the breakdown voltage is reached faster. Therefore, the sensitivity to static electricity is improved than the conventional static electricity measuring substrate on which the silicon layer 115 is not formed.

Further, the sensitivity of the charge path is increased in proportion to the thickness of the silicon layer 115. In particular, in the case of a silicon layer crystallized by a low-temperature polysilicon crystallization technology, the sensitivity is formed when the thickness is 600 µm or more and 700 µm or less. It is maximized.

Meanwhile, although not illustrated, a protective layer (not shown) for protecting each electrode on the substrate 101 may be further formed on the electrode bar 130 and the electrode pattern 140 described above.

The electrostatic measuring apparatus according to the above-described embodiment can be applied not only to a process for manufacturing a flat panel display device, but also to any kind of substrate process in which thin-film circuit elements are formed, and the substrate is being transferred, or the substrate manufacturing process is in progress. Static electricity generated in the chamber can also be measured.

In addition, the static electricity measuring substrate of the present invention can be conveyed simultaneously with the substrate of the flat panel display device, and as the manufacturing process can be disposed adjacent to the substrate in progress, there is an advantage of measuring static electricity in the same environment as the substrate. .

In particular, the static electricity measuring substrate of the present invention is provided with a silicon layer in which charge paths between two electrodes are formed when static electricity is generated under the electrode bar and the electrode pattern. Even if it is, there is a characteristic that can be measured more accurately.

In addition, it is possible to control the electrostatic sensitivity of the measurement substrate by adjusting the thickness of the silicon layer, and thus, it is possible to provide a customized electrostatic measurement substrate having characteristics required in each manufacturing process of the flat panel display device.

Hereinafter, the structure of the electrode bar and the electrode pattern of the static electricity measuring substrate according to the first embodiment of the present invention will be described with reference to the drawings.

4A and 4B are diagrams illustrating structures of electrode bars and electrode patterns of the static electricity measuring substrate according to the first embodiment of the present invention.

Referring to Figures 4a and 4b, the electrostatic measuring substrate of the present invention largely includes a plurality of cells on the substrate and the electrode bar 130 formed in a matrix form, and the electrode bar 130 into the cell spaced a predetermined distance apart And formed into electrode patterns 140a to 140d.

First, as shown in FIG. 4A, the static electricity measuring substrate according to the first embodiment includes an electrode bar 130 forming a plurality of cells in a square shape, a plurality of electrode patterns 140a to 140d formed inside the cell, It includes antenna pins 141a to 141d extending from each electrode pattern.

In the drawing, the electrode patterns 140a to 140d show an example of a rectangular shape, but the present invention is not limited thereto, and may be formed in various shapes such as a circular shape, an elliptical shape, a rectangular shape, a rhombus shape, or a triangle shape.

The electrode bar 130 is a metal wire having the same width that is cross-formed in the first direction and the second direction, and is formed to have a closed loop for each cell. At least one electrode pattern 140a to 140d spaced a predetermined distance from each side of the electrode bar 130 is disposed inside the cell.

The electrode patterns 140a to 140d are made of the same metal as the electrode bars 130 and have different areas. In the drawing, a structure in which the areas of the first to fourth electrode patterns 140a to 140d are sequentially increased in one direction is illustrated (140a <140b <140c <140d). Here, the area of each electrode pattern 140a to 140d is configured such that its increase or decrease ratio is constant.

In addition, antenna pins 141a to 141d of the same length are formed on one side of the electrode patterns 140a to 140d. As the lengths of the antenna pins 141a to 141d are the same, and the distance between the side surfaces of each electrode pattern 140a to 140d and the electrode bar 130 is the same, the electrode bars to the side where the antenna pins 141a to 141d are formed It is formed to have the same distance as 130 (d1 = d2 = d3 = d4).

Accordingly, the amount of charge charged to each electrode pattern (140a to 140d) is proportional to the area of the pattern, and when the static charge exceeds the threshold amount of charge, the antenna pins (141a to 141d) are damaged by the amount of charge, thereby causing damage. Depending on the shape, the location of static electricity on the substrate and the size of the static electricity can be measured.

In addition, FIG. 4B shows an electrostatic measuring substrate according to a first embodiment of a different structure, an electrode bar 230 constituting a plurality of cells in a square shape, and a plurality of electrode patterns 240a to 240d formed inside the cell ) And antenna pins 241a to 241d extending from each electrode pattern are shown.

The electrode bar 230 has the same structure as the above-described embodiment, and at least one electrode pattern 240a to 240d spaced apart from each side of the electrode bar 230 is disposed inside the cell.

The electrode patterns 240a to 240d are made of the same metal as the electrode bar 230 and are formed with the same area (240a = 240b = 240c = 240d). In addition, antenna pins 241a to 241d having different lengths are formed on one side of the electrode patterns 240a to 240d. In the drawing, a structure is illustrated in which the areas of the first to fourth antenna pins 241a to 241d are sequentially smaller in one direction (d1> d2> d3> d4). Here, the length of each antenna pin 241a to 240d is configured such that its increase or decrease ratio is constant.

As the distance between the antenna pins 241a to 241d and the electrode bar 230 is different, and the amount of charge charged to each electrode pattern 240a to 240d is proportional to the area, as the amount of static electricity increases, the first antenna pin ( From 241a), damage occurs in the order of the fourth antenna pin 241d, and through this, the position of the static electricity on the substrate and the size of the static electricity can be measured.

On the other hand, according to the above-described first embodiment, there is an advantage in that it is possible to accurately measure the position of static electricity generation as a plurality of electrode patterns are formed on one static electricity measurement substrate, but static electricity measurement is performed as the number of electrode patterns is very large. There is a limitation that it takes considerable inspection time.

As an example, in the case of an electrostatic measuring substrate applied to a substrate manufacturing process using a 2200mm × 2500mm sized mother substrate, an inspection time of more than 4 hours (Hr) is required by conducting an exhaustive investigation on all of the electrode patterns reaching 20,000. do.

Hereinafter, a preferred embodiment of the static electricity measuring substrate having an optimized pattern to shorten the inspection time compared to the first embodiment will be described.

5 is a view showing a static electricity measuring substrate according to a second embodiment of the present invention.

Referring to FIG. 5, the static electricity measuring substrate 300 of the present invention includes a substrate 301, a silicon layer 315 formed on the substrate, and a plurality of cells defined in a matrix form on the silicon layer 315. It includes (320), the plurality of cells (320) is formed with a main electrode bar 330 and an opposite electrode bar 340 for determining the location and size of static electricity generated through damage.

The substrate 301 may be made of glass or plastic, and may be the same material and size as the substrate (101 in FIG. 2) of the first embodiment described above. Then, a silicon layer 315 is formed on the substrate 301. As the material forming the silicon layer 315, amorphous silicon (a-Si: H) or low-temperature polysilicon (LTPS) may be used.

When the silicon layer 315 is charged in the region corresponding to the upper electrode bars 330 and 340 by the generation of static electricity in the substrate 301, an electrostatic pass is formed, and accordingly, each electrode bar 330 by static electricity 340) Inter-insulation breakdown occurs more easily. Here, the static electricity generated with respect to the substrate may be in the form of being generated from the back surface of the substrate 301 and directed to the front surface.

In addition, when the silicon layer 315 is low-temperature poly-crystallized, charges charged through the grain boundary move more easily between the two electrode bars 330 and 340, so that dielectric breakdown due to static electricity is easily generated. It is the same as that of the first embodiment. However, the static electricity measurement substrate according to the second embodiment is an electrode bar (130 in FIG. 2) formed in a matrix form disclosed in the first embodiment and an electrode pattern spaced apart from the electrode pin and having an antenna pin on one side (FIG. 2) The difference is that the time required for static electricity measurement is minimized by reducing the number within a range that minimizes the decrease in sensitivity by varying the patterning pattern of 140).

When explaining the pattern structure of the static electricity measuring substrate according to the second embodiment of the present invention, a metal layer is formed over the entire surface of the substrate on top of the silicon layer 315, and a plurality of cells 320 in a matrix form are formed through a patterning process. Defined, the plurality of cells 320 includes a main electrode bar 330 formed in one direction, and a counter electrode bar 340 disposed to face the vertical electrode bar.

A plurality of such cells 320 are repeatedly arranged in the same size on the substrate 301, one of which may have a size of about 2 inches, and in the case of an electrostatic measuring substrate having a size of 2200mm × 2500mm, approximately 2500 pieces may be provided. . Accordingly, as the number of the first embodiment is reduced to 1/8 or less compared to having approximately 20000 cells, the inspection time can also be shortened to 30 minutes (1 / 2hr), which is 1/8.

Here, each of the plurality of cells 320 is a static electricity reading means for each area on the substrate, and the outside of each cell is not surrounded by a separate metal pattern, and one main electrode bar 330 is located on one side of the cell 320. The counter electrode bar 340 is formed in a direction that is positioned to correspond and perpendicular thereto. Here, one main electrode bar 330 is provided per cell 320, but a plurality of counter electrode bars 340 may be provided.

Accordingly, the main electrode bar 330 and the counter electrode bar 340 become two opposite electrodes, and when the threshold amount of charge due to generation of static electricity is exceeded, the main electrode bar 330 and the counter electrode bar by the charge amount The position where static electricity is generated is detected through the position of the cell in which the insulation between 340 is destroyed and damaged.

In particular, the lower silicon layer 315 serves as a charge path through which the charged negative or positive charge moves, and serves to improve its sensitivity as it reaches the breakdown voltage faster when static electricity is generated. This sensitivity is affected by the thickness of the silicon layer 315. In addition, a protective layer (not shown) for protection may be further formed on the top of the main electrode bar 330 and the counter electrode bar 340.

Hereinafter, the structure of the electrode bar included in the cell of the static electricity measuring substrate according to the second embodiment of the present invention will be described with reference to the drawings.

6 is a plan view showing the structure of one cell in the static electricity measuring substrate according to the second embodiment of the present invention.

Referring to FIG. 6, the static electricity measuring substrate of the present invention includes a cell 320 in which a plurality of cells are defined on a substrate, and the cell 320 is formed by being spaced a predetermined distance in a direction perpendicular to the main electrode bar 330 and the same. It includes an opposite electrode bar 340.

One cell 320 may be formed to have a diagonal of about 2 inches in size. In this case, if the horizontal side (x) is about 30,000 μm, the vertical side (y) may be about 41,000 μm.

The main electrode bar 330 is formed to correspond to one side of the cell 320, and as the charged static electricity is charged, insulation or electrode damage occurs due to a voltage difference between the counter electrodes 340, and an operator inspects it. To determine whether static electricity is generated.

In addition, as shown in FIG. 6, the main electrode bar 330 is bent at least twice at one end to realize the distance between the opposing electrode bar 340 as close as possible within a range not exceeding the design margin. It may be provided with a bent portion 331 of the form. Such a structure has an effect of increasing the sensitivity of the static electricity measuring device.

In addition, one or more counter electrode bars 340 may be provided in one cell, and may be formed to correspond to the main electrode bars 330 in a vertical direction. In the drawing, an example of a structure in which the opposite electrode bar 340 and the main electrode part 330 face each other in an 'L' shape at a side end is illustrated.

When static electricity is charged to any one of the main electrode bar 330 and the counter electrode bar 340 according to the above structure, insulation breakdown occurs between the two electrodes 330 and 340, and the electrode is damaged. It is determined that a defect is generated in the corresponding area by detecting the presence or absence of damage at 320.

Particularly, one counter electrode bar 340 may be formed in a structure in which a plurality of electrode patterns 341 are connected through a bridge 345, and both ends of the opposite electrode bar 340 protrude only the bridge 3451. It can be formed in the form.

The bridge 3345 serves as an antenna pin (141 in FIG. 2) in the first embodiment. When static electricity is generated in the cell 320, the electrode damage at the point P1 is inspected to determine whether static electricity is generated and You can determine the location.

In addition, local static electricity can be charged even within one counter electrode bar 340, and whether the bridge 345 between each electrode pattern 341 is damaged can be detected to more accurately determine where static electricity is generated on the substrate. have.

On the other hand, in order to more accurately determine the location of static electricity generation and maximize the sensitivity of detection, a structure including a plurality of counter electrode bars 340 and a separate auxiliary electrode bar may be applied to one main electrode bar.

Hereinafter, an electrostatic measuring substrate having a plurality of counter electrode bars and auxiliary electrode bars according to a second embodiment of the present invention will be described with reference to the drawings.

7 is a plan view showing the structure of one cell in an electrostatic measuring substrate having a plurality of counter electrode bars and auxiliary electrode bars according to a second embodiment of the present invention.

Referring to FIG. 7, the static electricity measuring substrate of the present invention includes a cell 420 defined on an upper portion of the substrate, and the cell 420 is formed by being spaced apart from the main electrode bar 430 by a predetermined distance in a direction perpendicular thereto. It includes counter electrode bars 440 and 460 and auxiliary electrode bars 450 arranged in a direction parallel to the counter electrode bars 440 and 460.

The main electrode bar 430 is formed to correspond to one side of the cell 420, and if an insulation or electrode damage occurs due to a voltage difference between the counter electrodes 440 as charged by the incoming static electricity, the operator is based on this. It determines whether static electricity is generated. In addition, a bent portion 431 of a shape bent twice may be provided at one end of the main electrode bar 430.

A plurality of counter electrode bars 440 and 460 are disposed in parallel along the longitudinal direction of the main electrode bar 430 in one cell 420. Each of the counter electrode bars 440 and 460 corresponds to the main electrode bar 430 in the vertical direction.

In addition, a plurality of auxiliary electrode bars 450 which are arranged side by side in the horizontal direction is further formed between the plurality of counter electrode bars 440 and 460. The auxiliary electrode bar 450 is disposed between the main electrode bar 430 as well as the counter electrode bars 440 and 460, and when static electricity is induced therein, insulation breakdown occurs. Accordingly, in the entire area of the cell 420, Static electricity generated can be detected.

In particular, each of the opposing electrode bars 440 and 460 may be formed in a structure in which a plurality of electrode patterns 441 are connected through a bridge 445. Both ends of the opposite electrode bars 440 and 460 are formed in a form in which only the bridge 4451 is protruded, so that it acts similar to the antenna pin of the first embodiment, and when static electricity is generated in the cell 420, electrode damage at the point P1 You can determine whether static electricity is generated and its location by inspecting. In addition, a plurality of opposing electrode bars 440 and 460 may be formed to check whether insulation breakdown occurs at P2 points facing along the longitudinal direction of the main electrode bar 430.

In addition, local static electricity can be charged even in the opposite electrode bars 440 and 460, and the operator more accurately discriminates the location of the static electricity on the substrate by inspecting whether the bridge 445 is broken between the electrode patterns 441. can do.

The auxiliary electrode bars 450 are formed adjacent to the counter electrode bars 440 and 460 in a parallel direction, and allow static electricity generated between the counter electrode bars 440 and 460 to be detected. That is, the operator can determine whether static electricity has been generated in the area by inspecting the P1 and P4 points for damage as well as the P1 points shown in FIG. 7. In particular, the opposite electrode bars 440 and 460 and the auxiliary electrode bars 450 each have a recess 442 and an iron, which each acts similar to the antenna pin in one direction, in order to improve sensitivity. (I) The portion 451 may be further formed.

The length and thickness of each electrode bar and the separation distance between the electrode bars should be determined within an appropriate sensitivity range, and the electrodes included in the cell of the static electricity measuring substrate according to the second embodiment of the present invention will be described below with reference to the drawings. Describe the dimensions of the bar.

FIG. 8 is an enlarged view of part X of FIG. 7.

Referring to FIG. 8, the cell of the static electricity measuring substrate according to the embodiment of the present invention includes a main electrode bar 430, a counter electrode bar 440, and an auxiliary electrode bar 450.

As an example provided in a cell having a diagonal of about 2 inches, the thickness (a) of the main electrode bar 430 is 50 ± 5 μm, and the bent portion 431 provided at the end of the main electrode bar 430 is The thickness (b) may be formed to 40 ± 5 μm, and the length (c) of the sides facing the opposite electrode bar 440 and the auxiliary electrode bar 450 may be formed to 120 ± 5 μm.

In addition, the length d of the electrode pattern 441 of the opposite electrode bar 440 in the vertical direction may be 24 ± 5 μm, and the length e of the bridges 445 and 4451 may be 18 ± 5 μm. . In addition, the length (f) of the yaw portion 442 formed in the electrode pattern 441 is 6 ± 2 μm, and the gap (g) between the yaw portions 442 is 10 ± 2 μm. It may be, the thickness (h) of the yaw (凹) portion 442 may be formed of 7 ± 2 ㎛.

In addition, the auxiliary electrode bar 450 may have a thickness (i) of 8 ± 2 μm, and the iron portion 451 formed on the auxiliary electrode bar 450 may have a length (j) of 8 ±. 2 μm, and the thickness k may be 6 ± 2 μm. In particular, the insulation breakdown due to electrostatic charging is spaced between the main electrode bar 430 and the counter electrode bar 440 and the auxiliary electrode bar 450. The distance A has the greatest effect, and the preferred separation distance A is 5 μm or more and 20 μm or less.

Hereinafter, a method of manufacturing an electrostatic measuring substrate according to an embodiment of the present invention will be described with reference to the drawings.

9A to 9E are views showing a method of manufacturing an electrostatic measuring substrate according to an embodiment of the present invention.

As shown in Figure 9a, in the static substrate measuring substrate manufacturing method of the present invention, first, a glass substrate or a plastic substrate of the same material as the substrate of the flat panel display device to be measured is prepared, and an amorphous silicon layer 110 is disposed thereon. This is the step of deposition.

Next, as illustrated in FIG. 9B, after dehydrogenation is performed on the amorphous silicon layer, a crystallized silicon layer 115 is formed through a low-temperature polycrystalline silicon (LTPS) crystallization step.

In the low-temperature polycrystalline silicon crystallization step described above, any one of ELA (Excimer Laser Annealing) technology, CGS (Continuous Grain Silicon) technology, and SLS (Sequential Lateral Solidification) technology may be applied. Depending on the designer's intention, this crystallization step can be omitted.

The silicon layer 115 is for forming a charge path between two opposing electrodes when static electricity is generated with respect to the substrate, and the charge path is improved in sensitivity in proportion to the thickness of the silicon layer 115. In particular, in order to maximize the sensitivity of the silicon layer crystallized by the low-temperature polysilicon crystallization technology, it is preferable to form a thickness of 600 Å or more and 700 Å or less.

Next, referring to FIG. 9C, the metal layer 120 is deposited on the amorphous silicon layer 110 or the crystallized silicon layer 115 by a predetermined thickness, and then a photosensitive film 150 is applied thereon. Metal materials used at this time include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), copper (Cu), and molybdenum (Mo) ) May be used at least one selected from the group consisting of or alloys thereof.

Subsequently, referring to 9d, a photosensitive film pattern is formed by patterning a photosensitive film through a mask process using a photolithography process technique on a substrate on which the photosensitive film is formed, and the lower metal layer 120 is formed using the photosensitive film pattern 151 as a mask. Etch selectively.

Accordingly, as illustrated in FIG. 9E, an electrode bar and electrode patterns 130 and 140 facing the silicon layer 115 are formed on top of the silicon layer 115 to complete the manufacturing process of the static electricity measuring substrate according to the present invention. Thereafter, in order to protect the substrate 101 and the pattern on the top, the process including the electrode bar and the electrode patterns 130 and 140 and further forming the protective layer 160 over the entire surface of the substrate 101 is additionally performed. You can proceed.

Therefore, the static electricity measuring substrate of the present invention can not only measure static electricity generated under the same conditions as the substrate manufacturing process of the flat panel display device, but also the charge path is formed by the silicon layer provided below the electrode bar and the electrode pattern. The sensitivity of electrostatic measurement is improved, and it is possible to quantify the static electricity and to provide the manufacturing standards for customized substrates for each sensitivity.

10 is a view showing the relationship between the dielectric breakdown voltage with respect to the separation distance of two opposing electrodes in a static electricity measuring substrate according to an embodiment of the present invention and the present invention.

Referring to FIG. 10, in the conventional electrostatic sider substrate, the separation distance between the electrode bar and the electrode pattern is about 5 V at an insulation breakdown voltage of about 700 V, and even if the separation distance exceeds 10 μm, it does not significantly deviate from 700 V. It can be seen that the distance between the separation distance and the breakdown voltage line has a small characteristic (A).

In contrast, in the static electricity measuring substrate of the present invention, the distance between the two electrodes has a breakdown voltage of 200 V to 300 V before and after 10 μm, so that the slope of the separation distance-breakdown voltage line has a large characteristic (B). Here, the greater the slope of the straight line, the more sensitive the dielectric breakdown occurs on the substrate against static electricity, that is, the static electricity measuring substrate of the present invention has improved sensitivity to static electricity than the conventional one by the charge path formed on the silicon layer. You can.

 Although described above with reference to preferred embodiments of the present invention, those skilled in the art variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You can understand that you can.

100: static electricity measuring board 101: substrate
115: silicon layer 130: electrode bar
140: electrode pattern 160: protective layer

Claims (19)

delete Board;
A silicon layer formed on the substrate; And
It includes a plurality of cells defined on the silicon layer,
The plurality of cells,
A main electrode bar formed in one direction; And
It includes at least one opposed electrode bar is formed so that one side end facing the main electrode bar at regular intervals in the vertical direction,
One end of the main electrode bar is bent at least once, and a side part is provided with a bent portion formed to face the opposite electrode bar.
Electrostatic measuring board. According to claim 2,
The silicon layer,
An electrostatic measuring substrate characterized by being amorphous silicon or low temperature polysilicon by crystallization technology. According to claim 2,
The silicon layer,
A static electricity measuring substrate having a thickness of 600 Å or more and 700 Å or less. delete According to claim 2,
The silicon layer,
During electrostatic charging, a static electricity measuring substrate is characterized in that a charge path is formed between the main electrode bar and the counter electrode bar. delete According to claim 2,
The counter electrode bar,
A plurality of square electrode patterns arranged in a line; And
It includes a bridge connecting the electrode pattern to each other,
Electrode patterns disposed on both ends, the static electricity measuring substrate, characterized in that the bridge is formed to protrude in both directions. The method of claim 8,
The electrode pattern,
An electrostatic measuring substrate, characterized in that at least one recess is formed in one direction. According to claim 2,
The plurality of cells,
The counter electrode bar further comprises a secondary electrode bar is formed spaced a predetermined distance in a parallel direction, characterized in that the static electricity measuring substrate. The method of claim 10,
The auxiliary electrode bar,
A static electricity measuring substrate, characterized in that a plurality of iron portions are formed in a direction perpendicular to the longitudinal direction. According to claim 2,
The predetermined interval, static electricity measuring substrate, characterized in that 5 ㎛ to 20 ㎛. According to claim 2,
The electrostatic measuring substrate further comprises a protective layer formed to cover the entire surface of the substrate over the electrode bar and the electrode pattern. delete Preparing a substrate;
Forming a silicon layer on the substrate;
Forming a metal layer on the silicon layer; And
Patterning the metal layer, comprising the steps of forming a main electrode bar defined by a plurality of cells and formed in one direction and one or more counter electrode bars having one side end facing each other in a vertical direction with the main electrode bar,
One end of the main electrode bar is bent at least once on one side end, and one side is provided with a bent portion formed to face the opposite electrode bar.
Method for manufacturing a static electricity measuring board. The method of claim 15,
The silicon layer,
Depositing amorphous silicon over the entire surface of the substrate;
Performing a dehydrogenation process on the amorphous silicon; And
Crystallizing the dehydrogenated amorphous silicon layer by performing an Excimer Laser Annealing (ELA) process CGS (Continuous Grain Silicon) process or SLS (Sequential Lateral Solidification) process
Method of manufacturing a static electricity measuring substrate comprising a. The method of claim 15,
The silicon layer,
Method of manufacturing a static electricity measuring substrate, characterized in that the thickness is formed to 600 Å or more and 700 Å or less. The method of claim 17,
After the step of forming the electrode bar and the electrode pattern,
And forming a protective layer covering the entire surface of the substrate with the electrode bar and the electrode pattern. The method of claim 15,
The silicon layer,
During electrostatic charging, a method of manufacturing an electrostatic measuring substrate, characterized in that a charge path is formed between the electrode bar and the electrode pattern.

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