KR102096058B1 - Organic light emitting display device and the fabrication method thereof - Google Patents

Abstract

An organic light emitting display device and a method of manufacturing the same are disclosed. The present invention includes the steps of forming each pattern layer in the active area and the pad area on the substrate; and forming a sealing thin film layer covering each pattern layer on the substrate. On the substrate, a sealing thin film layer of a single layer is formed by using the raw material of the sealing thin film layer made of an inorganic film material.

Description

An organic light emitting display device and a manufacturing method thereof {Organic light emitting display device and the fabrication method thereof}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device capable of reducing the weight and slimming the display device, and a manufacturing method thereof.

2. Description of the Related Art An organic light emitting display device (OLED) is a self-luminous display device, and has a wide viewing angle, excellent contrast, and a fast response speed.

Accordingly, the organic light emitting display device is a display device for mobile devices such as digital cameras, video cameras, camcorders, portable information terminals, smart phones, ultra-slim laptops, tablet personal computers, and flexible display devices, or electronic / electric products such as ultra-thin televisions. Because it can be applied to, it is spotlighted.

The organic light emitting diode display can implement color on the principle that holes and electrons injected into the anode and the cathode recombine in the light emitting layer to emit light, and excitons in which the injected holes and electrons combine are grounded from the excited state. It will emit light when falling.

Since the organic light emitting diode display is vulnerable to moisture, the substrate on which the thin film layer is formed is sealed through an encapsulation process. When sealing, when the thickness of the sealing member is thick, it is difficult to lighten and slim the organic light emitting display device.

The present invention is to reduce the thickness of a display device and provide a light weight organic light emitting display device and a method of manufacturing the same by forming a single layer sealing thin film layer on a substrate on which the organic light emitting device is formed.

A method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention,

Forming respective pattern layers in the active area and the pad area on the substrate; And

Including; forming a sealing thin film layer covering each pattern layer on the substrate;

In the step of forming the sealing thin film layer,

On the substrate, a sealing thin film layer of a single layer is formed by using the raw material of the sealing thin film layer made of an inorganic film material.

In one embodiment, in the step of forming each pattern layer in the active region and the pad portion region,

A semiconductor active layer, a first insulating film, a gate electrode, a second insulating film, a source and drain electrode, a third insulating film, and a first electrode of an organic light emitting device are formed in an active region on the substrate, and a pad portion terminal is provided in the pad portion region on the substrate. Forming a fourth insulating film covering and exposing a portion of the first electrode and covering the pad terminal; and an organic light emitting layer and an organic light emitting device on the fourth insulating film. And forming a second electrode.

In one embodiment, the first to third insulating films are formed over the active region and the pad portion region on the substrate, and the source and drain electrodes and the pad portion terminals are both formed on the third insulating layer.

In one embodiment, in the step of forming the fourth insulating film,

In the active region, an exposure process is performed in which the raw material of the fourth insulating film is half-tone exposure, and in the pad portion region, an exposure process is performed in which the raw material of the fourth insulating film is non-exposed, so that the material in the active region and the pad region is 4 The thickness of the insulating film is formed differently.

In one embodiment, the thickness of the fourth insulating film in the pad region is formed to be thicker than the thickness of the fourth insulating film in the active region.

In one embodiment, in the step of forming the sealing thin film layer,

The raw material of the sealing thin film layer covering both the active area and the pad area is coated, cured, and etched.

In one embodiment, in the step of etching the sealing thin film layer,

The top surface of the fourth insulating layer formed in the pad portion region is etched to expose.

In one embodiment, a touch screen pattern is further formed on the surface of the fourth insulating layer formed in the active region.

In one embodiment, in the step of forming the sealing thin film layer,

Coating the raw material of the sealing thin film layer on the substrate; and curing the sealing thin film layer at a temperature of 200 ° C. or less; and etching the raw material of the sealing thin film layer to complete the sealing thin film layer; Includes.

In one embodiment, the sealing thin film layer is a polysilazane containing SiO ₂ as a main component, a borate glass containing B ₂ O ₃ as a main component, a phosphate glass containing P ₂ O ₅ as a main component, or TeO ₂ as a main component Any selected from a tellurium-containing composition, a bismuth oxide-based composition containing Bi ₂ O ₃ as a main component, or a chalcogenide-based composition containing one or more elements selected from the group consisting of S, Se and Te. Includes one.

An organic light emitting display device according to another aspect of the present invention,

Board;

A thin film transistor formed in the active region on the substrate and including a semiconductor active layer, a first insulating film, a gate electrode, a second insulating film, a source and drain electrode, and a third insulating film;

An organic light emitting element electrically connected to the thin film transistor and including a first electrode, an organic light emitting layer, and a second electrode partially exposed by a fourth insulating film;

A pad portion terminal formed in a pad portion region on the substrate; And

And a sealing thin film layer that covers the thin film transistor and the organic light emitting device and is a single layer of an inorganic film.

In one embodiment, the sealing thin film layer is a polysilazane containing SiO ₂ as a main component, a borate glass containing B ₂ O ₃ as a main component, a phosphate glass containing P ₂ O ₅ as a main component, or TeO ₂ as a main component Any selected from a tellurium-containing composition, a bismuth oxide-based composition containing Bi ₂ O ₃ as a main component, or a chalcogenide-based composition containing one or more elements selected from the group consisting of S, Se and Te. Includes one.

In one embodiment, a touch screen is further formed on an outer surface of the fourth insulating film.

As described above, the organic light emitting display device according to the embodiment of the present invention, and a method of manufacturing the same, are a single layer made of an inorganic film material by coating, curing, etching, and developing an element material of a sealed thin film layer on a substrate on which an element is formed. By forming the sealing thin film layer of, the thickness of the organic light emitting display device can be reduced and the weight can be reduced.

In addition, as the insulating layer is patterned to have different thicknesses in the active region and the pad portion region, and a sealing thin film layer of a single layer is formed on the insulating layer, the manufacturing process is simplified.

1A to 1E sequentially illustrate processes for manufacturing the organic light emitting display device of the present invention,
Figure 1a is a cross-sectional view showing a state after forming a fourth insulating film on the substrate of the present invention,
Figure 1b is a cross-sectional view showing a state after forming the organic light emitting device on the substrate of Figure 1a,
Figure 1c is a cross-sectional view showing a state after coating the raw material of the sealing thin film layer on the substrate of Figure 1b,
Figure 1d is a cross-sectional view showing a state after etching the raw material of the sealing thin film layer of Figure 1c,
1E is a cross-sectional view showing a state after developing the pad portion region of FIG. 1D,
2 is a flowchart illustrating a process for manufacturing the organic light emitting display device of FIGS. 1A to 1E,
3 is a cross-sectional view illustrating a state after forming a touch screen of an organic light emitting display device according to another embodiment of the present invention.

The present invention can be applied to various transformations and can have various embodiments, and specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all conversions, equivalents, and substitutes included in the spirit and scope of the present invention. In the description of the present invention, when it is determined that a detailed description of known technologies related to the present invention may obscure the subject matter of the present invention, the detailed description will be omitted.

Terms such as first and second may be used to describe various components, but the components should not be limited by terms. The terms are used only to distinguish one component from another component.

The terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms “comprises” or “have” are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, one or more other features. It should be understood that the presence or addition possibilities of fields, numbers, steps, actions, components, parts or combinations thereof are not excluded in advance.

Hereinafter, an embodiment of the organic light emitting display device according to the present invention will be described in detail with reference to the accompanying drawings, and in describing with reference to the accompanying drawings, identical or corresponding components are assigned the same drawing numbers and overlapped therewith. The description will be omitted.

1A to 1E are cross-sectional views sequentially illustrating a process for manufacturing an organic light emitting display device 100 according to an embodiment of the present invention, and FIG. 2 is an organic light emitting display device 100 of FIGS. 1A to 1E It is a flow chart showing a process for manufacturing.

Referring to FIG. 1A, a substrate 101 is provided on the organic light emitting diode display 100. The substrate 101 is preferably made of an insulating substrate such as glass or plastic.

A barrier film 102 is formed on the surface of the substrate 101. The barrier film 102 may be made of an inorganic film such as SiOx, SiNx, SiON, AlO, AlON, or an organic film such as acrylic or polyimide, or the organic film and the inorganic film may be alternately stacked. The barrier layer 102 may have oxygen and moisture through the substrate 101 in an active area (A / A), a cathode contact area (C / C / A), or a pad portion area. (pad) serves to block the penetration.

Each pattern layer is formed on the active area (A / A), the cathode contact area (C / C / A), and the pad area (pad). (S10)

A thin film transistor TFT is formed in the active area A / A.

The thin film transistor of this embodiment illustrates a top gate type thin film transistor, but of course, a thin film transistor having a different structure such as a bottom gate type may be provided. Further, it is needless to say that the active area A / A is provided with at least one transistor area, as well as a pixel area and a capacitor area.

A semiconductor active layer 103 having a predetermined pattern is formed on the barrier layer 101. When the semiconductor active layer 103 is formed of polysilicon, amorphous silicon is formed and crystallized to change to polysilicon.

Crystallization methods of amorphous silicon include RTA (Rapid Thermal Annealing), SPC (Solid Phase Crystallzation), ELA (Eximer Laser Annealing), MIC (Metal Induced Crystallization), MILC (Metal Induced Lateral Crystallization), and SLS Various methods such as Sequential Lateral Solidification (SGS) method, SGS (Super Grain Silicon) method, and LTPS (Low temperature poly-silicon) method can be applied.

A first insulating layer 107 corresponding to the gate insulating layer is deposited on the semiconductor active layer 103. The first insulating film 107 can be formed of a single layer or, SiO ₂ and the SiN _x layer structure with SiO _2.

A gate electrode 108 is formed in a predetermined region above the gate insulating layer 107. The gate electrode 108 is connected to a gate line (not shown) that applies a thin film transistor on / off signal. The gate electrode 108 may be a single or multiple metals, and may be formed of a single layer film of Mo, MoW, Cr, Al alloy, Mg, Al, Ni, W, Au, or a multilayer film made of a mixture thereof. It is preferred.

A source region 104 and a drain region 105 are formed by doping N-type or P-type impurity ions using the gate electrode 108 as a mask on the semiconductor active layer 103. The region between the source region 104 and the drain region 105 serves as a channel region 106 in which impurities are not doped.

A second insulating layer 111 corresponding to the interlayer insulating layer is formed on the gate electrode 108. The second insulating film 111 may be formed of an insulating material such as SiO ₂ or SiNx, or may be formed of an insulating organic material.

A contact hole is formed by selectively removing the first insulating layer 107 and the second insulating layer 111, and a portion of the source region 104 and the drain region 105 is formed due to the formation of the contact hole. The surface is exposed.

Surfaces of the exposed source region 104 and the drain region 105 are connected to the source electrode 109 electrically connected to the source region 104 through a contact hole, and electrically connected to the drain region 105. The drain electrode 110 is formed.

A third insulating layer 112 corresponding to a protective layer (passivation layer and / or planarization layer) made of SiO ₂ , SiNx, or the like is formed on the source electrode 109 and the drain electrode 110.

The third insulating film 112 may be formed of an organic material such as acryl, benzocyclobutene (BCB), or polyimide (PI), or an inorganic material such as SiN _x , formed of a single layer, a double layer, or a multi-layer Various modifications are possible, such as can be configured as.

The first electrode corresponding to the pixel electrode of the organic light emitting device (OLED) electrically connected to any one of the source electrode 109 and the drain electrode 110 by etching the third insulating layer 112 through the contact hole. The 113 is formed on the third insulating film 112.

The first electrode 113 serves as an anode electrode, and may be formed of various conductive materials. The first electrode 113 may be formed of a transparent electrode or a reflective electrode depending on the characteristics of the organic light emitting device.

For example, when the first electrode 113 is used as a transparent electrode, ITO, IZO, ZnO, and In ₂ O ₃ may be provided. When used as a reflective electrode, Ag, Mg, Al, Pt, Pd, Au, Ni , After forming a reflective film with Nd, Ir, Cr, and these compounds, ITO, IZO, ZnO, In ₂ O ₃ may be formed thereon.

In the cathode contact region (C / C / A), some pattern layers of the cathode contact region (C / C / A) are formed in the same process as the step of forming the pattern layer of the active region (A / A). Is done.

The cathode contact region (C / C / A) includes a barrier layer 102 on the substrate 101, a first insulating layer 107 corresponding to the gate insulating layer, and a second insulating layer 111 corresponding to the interlayer insulating layer. These are stacked sequentially. The insulating film formed on the cathode contact region C / C / A is not limited to any one, provided that at least one insulating film is formed from the above-described insulating films 102, 107, and 111.

The wiring 131 is formed on the second insulating layer 111. The wiring 131 is preferably formed at the same time when the source electrode 109 and / or the drain electrode 110 formed in the active region A / A are formed using the same material. A portion of the third insulating layer 112 corresponding to the protective layer is covered at one edge of the wiring 131.

In the pad portion area (pad), some pattern layers of the pad portion area (pad) are formed in the same process as the process of forming the pattern layer of the active area (A / A).

A barrier layer 102, a first insulating layer 107 corresponding to the gate insulating layer, and a second insulating layer 111 corresponding to the interlayer insulating layer are sequentially stacked on the pad portion region on the substrate 101. . The insulating film formed on the pad portion region is not limited thereto.

A pad portion terminal 151 is formed on the second insulating layer 111. The pad portion terminal 151 includes a first portion 152 formed of the same material when forming the gate electrode 107 formed in the active area A / A, and the source electrode 109 or drain. When forming the electrode 110, the second portion 153 is formed of the same material.

In this embodiment, the second portion 153 is formed to completely surround the first portion 152, but if the second portion 153 is formed on the first portion 152, any one It is not limited. In addition, if the pad portion terminal 151 is formed of a conductive material such as a single-layer structure made of either a gate electrode 107, a source electrode 109 or a drain electrode 110, or a double-layer structure in which they are stacked, It is not limited to either.

As described above, after each pattern layer is formed in the active region (A / A), the cathode contact region (C / C / A), and the pad portion region (pad), the fourth insulating film 114 having different thicknesses To form a pattern of (S20)

A fourth insulating layer 114 corresponding to a pixel define layer (PDL) is formed on the first electrode 113 to cover the edge of the first electrode 113. The pixel-defining layer defines an emission region by surrounding the edge of the first electrode 113. The pixel defining layer opens a portion to expose a portion of the first electrode 113 to the outside.

The pixel-defining layer may be formed of an organic material or an inorganic material. For example, the pixel-defining layer may be formed of an organic material such as polyimide, polyamide benzocyclobutene, acrylic resin, panel resin, or an inorganic material such as SiNx. In addition, the pixel-defining film may be formed in a single layer, or may be composed of multiple layers of two or more, such as various modifications.

The fourth insulating layer 114 is also formed in the cathode contact region C / C / A. The fourth insulating layer 114 covers one edge of the wiring 131.

The fourth insulating layer 114 is also formed in the pad portion region (pad). The fourth insulating layer 114 is formed to completely surround the pad portion terminal 151.

At this time, the fourth insulating layer 114 patterned on the active area (A / A), the cathode contact area (C / C / A), and the pad area (pad) has different thicknesses.

To this end, after applying the raw material of the fourth insulating film 114, a half tone (half) is applied to the active area (A / A) and the cathode contact area (C / C / A) during exposure using a mask. tone) is exposed, and a non-exposure process is performed on the pad portion pad.

Accordingly, the thickness of the fourth insulating layer 114 in the active region (A / A) and the cathode contact region (C / C / A) is greater than that of the fourth insulating layer 114 in the pad region (pad). The thickness is formed as thick as h.

After the fourth insulating layer 114 having different thicknesses in the active region (A / A), the cathode contact region (C / C / A), and the pad portion region (pad) is formed as shown in FIG. As illustrated, an organic emission layer 115 and a second electrode 116 are formed in the active area A / A. (S30)

The organic emission layer 115 is formed on a portion of the first electrode 113 exposed to the outside by opening a portion of the fourth insulating layer 114. In this embodiment, the organic light emitting layer 115 is illustrated as being patterned to correspond only to each sub-pixel, that is, the patterned first electrode 113, but this is illustrated for convenience in order to explain the configuration of the sub-pixel. Of course, the organic light emitting layer 115 may be integrally formed with other adjacent sub-pixels. In addition, some of the layers of the organic emission layer 115 may be formed for each sub-pixel, and the other layers may be variously formed such that they may be integrally formed with the organic emission layer 116 of the adjacent sub-pixel.

The organic light emitting layer 115 may be provided with a low molecular weight or a high molecular organic material.

When the organic light emitting layer 115 uses a low molecular organic material, a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EML), an electron transport layer (Electron Transport Layer, ETL) ), An electron injection layer (EIL), etc. may be formed by being stacked in a single, but complex structure.

Available organic materials are copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) Various applications including -N, N'-diphenyl-benzidine, NPB), and tris-8-hydroxyquinoline aluminum (Alq3) are applicable. The low molecular organic material may be formed by a method such as vacuum deposition using masks.

When the organic light emitting layer 115 uses a polymer organic material, it may have a structure having a hole transport layer (HTL) and a light emitting layer (EML). PEDOT is used as the hole transport layer, and high-molecular organic materials such as PPV (Poly-Phenylenevinylene) and polyfluorene are used as the light emitting layer. The polymer organic material can be formed by screen printing or inkjet printing.

The organic light emitting layer 115 as described above is not necessarily limited thereto, and various embodiments may be applied.

The second electrode 116 corresponding to the common electrode of the organic light emitting diodes OLED and 117 is formed on the organic light emitting layer 115.

The second electrode 116 may be formed of a transparent electrode or a reflective electrode, like the first electrode 113.

When the second electrode 116 is used as a transparent electrode, a metal having a small work function, that is, Li, Ca, LiF / Ca, LiF / Al, Al, Mg and their compounds are deposited on the organic light emitting layer 115 After that, an auxiliary electrode or a bus electrode line formed of a material for forming a transparent electrode such as ITO, IZO, ZnO, and In ₂ O ₃ may be formed thereon.

When the second electrode 116 is used as a reflective electrode, Li, Ca, LiF / Ca, LiF / Al, Al, Mg and their compounds are formed by vapor deposition.

Meanwhile, the first electrode 113 may be formed as a transparent electrode or a corresponding shape in the form of an opening of each sub-pixel when formed as a reflective electrode. On the other hand, the second electrode 116 is formed by depositing a transparent electrode or a reflective electrode over the entire display area. Alternatively, the second electrode 116 is not necessarily deposited on the entire surface, and can be formed in various patterns. In addition, the first electrode 113 and the second electrode 116 may be stacked opposite to each other.

The first electrode 113 and the second electrode 116 are insulated from each other by the organic light emitting layer 115. When voltage is applied to the first electrode 113 and the second electrode 116, visible light is emitted from the organic light emitting layer 115 to realize an image that can be recognized by a user.

In the cathode contact region C / C / A, the second electrode 116 is electrically connected to the wiring 131.

At this time, the height of the organic light emitting device 117 having the first electrode 113, the organic light emitting layer 115, and the second electrode 116 is higher than the height of the fourth insulating film 114 in the pad area. It is formed low.

After the organic light emitting device 117 is formed, as shown in FIG. 1C, the sealing covers both the active area (A / A), the cathode contact area (C / C / A), and the pad area (pad) together The thin film layer 171 is coated. The sealing thin film layer 171 is formed to protect the organic light emitting layer 115 and other thin films from external moisture or oxygen. (S40)

As the raw material of the sealing thin film layer 171, an inorganic film material, for example, polysilazane containing SiO ₂ as a main component, borate glass containing B ₂ O ₃ as a main component, or P ₂ O ₅ as a main component Phosphate glass containing, a tellurite-based composition containing TeO ₂ as a main component, a bismuth oxide-based composition containing Bi ₂ O ₃ as a main component, or one or more elements selected from the group consisting of S, Se and Te Any one selected from among the chalcogenide-based compositions may be used.

Among them, there are various methods for forming the polysilazane film, but a wet coating method may be used.

The polysilazane is a material that is converted to an SiO ₂ inorganic film at 200 ° C. (° C.) or less, and is a high strength material having a hardness of 8H or more. In addition, the polysilazane is advantageous for covering thin film layers having different steps, such as an active region (A / A), a cathode contact region (C / C / A), and a pad portion region (pad). It is a material with excellent adhesion to the formed thin film layer. The polysilazane-containing liquid includes a catalyst for ceramicizing polysilazane and the like.

After the coating of the sealing thin film layer 171 is completed, it is thermally cured at a low temperature of 200 ° C. or less, or at room temperature.

After the heat treatment of the sealing thin film layer 171, as shown in Figure 1d, the sealing thin film layer 171 is etched. (S50)

When the sealing thin film layer 171 is etched, an etching process is performed until the upper surface of the fourth insulating layer 114 formed on the pad region pad is exposed to the outside. When the upper surface of the fourth insulating layer 114 is exposed, an active region (A / A) having a lower height than the fourth insulating layer 114 formed on the pad portion region (pad), and a cathode contact region (C / The fourth insulating film 114 formed on C / A or the second electrode 116 is not exposed to the outside, but is covered by the sealing thin film layer 171.

After the etching process is performed, as illustrated in FIG. 1E, the pad portion region is developed. (S60)

By developing the pad portion region (pad), the fourth insulating layer 114 existing in the pad portion region (pad) is removed. Accordingly, the pad portion terminal 151 is exposed to the pad region.

Through the above process, each thin film layer is formed on the active area (A / A), the cathode contact area (C / C / A), and the pad area (pad) on the substrate 101, and the substrate is formed. A sealing thin film layer 171 made of a single layer sealing the thin film layers from the outside on the substrate 101 may be formed by coating the inorganic film material on the 101. As described above, the organic light emitting display device 100 may use a thin film type inorganic film instead of a thick film type glass as the sealing thin film layer 171, so that the thickness is thin and lightweight.

3 is a cross-sectional view illustrating a state after forming a touch screen of the organic light emitting diode display 300 according to another embodiment of the present invention.

Here, the process after the development of the fourth insulating film 114 is completed, and features of the present embodiment will be mainly described.

Referring to the drawing, the touch screen 310 is formed on the sealing thin film layer 117. The touch screen 310 is formed in a portion corresponding to the active area A / A of the substrate 101.

The touch screen 310 of the present embodiment describes, for example, an electrostatic capacitive type touch unit, but is not limited thereto, and the resistive type or the electromagnetic field type (electro-magnetic type) ), SOA type (surface acoustic wave type, saw type) or infrared type (infrared type).

A plurality of first electrode pattern portions 301 are formed along one direction of the substrate 101, and a plurality of second electrode pattern portions 302 are formed along the other direction of the substrate 101. The first electrode pattern portion 301 and the second electrode pattern portion 302 are arranged in a direction intersecting each other. At this time, adjacent first electrode pattern portions 301 are connected to each other by a connection portion 304. Although not illustrated, adjacent second electrode pattern portions 302 are connected to each other by other connection portions.

The first electrode pattern portion 301 and the second electrode pattern portion 302 may be formed of a transparent conductive layer, for example, a transparent material such as ITO, IZO, ZnO, or In ₂ O ₃ . In addition, the first electrode pattern portion 301 and the second electrode pattern portion 302 may be formed through a photolithography process.

The first electrode pattern portion 301 and the second electrode pattern portion 302 may be formed by patterning a transparent conductive layer formed using a manufacturing method such as deposition, spin coating, sputtering, inkjet, or the like.

The first electrode pattern portion 301 and the second electrode pattern portion 302 are covered by an insulating layer 303. The insulating layer 303 serves to insulate the first electrode pattern portion 301 from the second electrode pattern portion 302.

A protective layer 305 for covering the connection portion 304 connecting the plurality of first electrode pattern portions 301 is formed on the insulating layer 303.

The touch screen 310 having the above-described structure measures an electrostatic capacitance that changes between the first electrode pattern portion 301 and the second electrode pattern portion 302 when an input means such as a finger comes in contact with or comes into contact with it. To detect the touch position.

Meanwhile, the touch screen 310 is an on-cell touch screen panel (on-cell TSP) in which a touch screen pattern is formed on a cell. The touch screen 310 may be integrally formed on the outer surface of the sealing thin film layer 171, or may be formed on a separately provided substrate.

Alternatively, the removal of the fourth insulating layer 114 in the pad portion region may be performed through a development process during the photolithography process of the touch screen 310, and the pad portion terminal may be provided in the pad portion region through the development process. 151 may be exposed to the outside.

100 ... Organic light-emitting display 101 ...
102 ... barrier film 103 ... semiconductor active layer
107 ... first insulating film 111 ... second insulating film
112 ... third insulating film 113 ... first electrode
114 ... 4th insulating film 115 ... Organic light-emitting layer
116 ... second electrode 117 ... organic light emitting element
131 ... Wiring 151 ... Pad terminal
171 ... sealing film layer

Claims (4)

Board;
A thin film transistor formed in the active region on the substrate and including a semiconductor active layer, a first insulating film, a gate electrode, a second insulating film, a source and drain electrode, and a third insulating film;
An organic light emitting element electrically connected to the thin film transistor and including a first electrode, an organic light emitting layer, and a second electrode partially exposed by a fourth insulating film;
A pad portion terminal formed in a pad portion region on the substrate; And
A sealing thin film layer covering the thin film transistor and the organic light emitting element and having a single layer of an inorganic film;
Includes a touch screen installed on the outer surface of the sealing thin film layer to directly contact the sealing thin film layer,
The sealing thin film layer is an organic light emitting display device comprising a bismuth oxide-based composition containing Bi ₂ O ₃ as a main component.
According to claim 1,
The sealing thin film layer is an organic light emitting display device formed by coating an element material on the substrate and curing it at a temperature of 200 ° C. or less and etching it.
delete According to claim 1,
The touch screen,
A first electrode pattern portion spaced apart along one direction of the substrate;
A second electrode pattern portion arranged to be spaced apart along the other direction of the substrate and crossing the first electrode pattern portion; And
And an insulating layer that insulates the first electrode pattern portion and the second electrode pattern portion from each other.

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