KR102058105B1 - RF generator, apparatus for plasma treatment and method of controlling plasma treatment using the same - Google Patents

Abstract

The present invention provides a process chamber including a substrate support on which a substrate may be mounted, a gas supply unit for supplying a process gas onto the substrate, and an exhaust unit capable of adjusting a process pressure; A control unit for adjusting the intensity, waveform, formation time, or on / off frequency of the plasma to be formed in the process chamber; A power generator for generating RF (Radio Frequency) power to be applied to the process chamber to form the plasma, a detector for detecting a matching state of the RF power generated by the power generator in real time, the detected RF An RF generator including an arithmetic control unit generating plasma information in the process chamber from accumulated information on a matching state of electric power, and a transmitting unit transmitting the plasma information generated by the arithmetic control unit to the control unit; And a matching unit configured to form a matching network between the RF generator and the process chamber. It provides a plasma processing apparatus comprising a.

Description

Plasma treatment apparatus and plasma treatment control method using the same {RF generator, apparatus for plasma treatment and method of controlling plasma treatment using the same}

The present invention relates to a plasma processing apparatus and a plasma processing control method using the same, and more particularly, to a plasma processing apparatus for forming a plasma and a plasma processing control method using the same.

The Federal Communications Commission (FCC) has designated so-called ISM frequencies as 13.56 MHz, 27.12 MHz, and 40.68 MHz, respectively, for industrial, scientific, and medical purposes. Plasma etching and deposition equipment manufacturers typically use the 13.56 MHz frequency to operate plasma chambers for manufacturing integrated circuits and plasma displays.

RF generators that generate RF power with these frequencies can send data such as forward power, reflected power, and load power to Ethernet, EtherCAT, and DeviceNet. Device Net), or digital communication such as RS-232, or an analog signal to the control unit connected to the plasma chamber. The data can be analyzed by the control unit to determine whether there is a problem with the RF power transfer during the process.

While the external communication speed between the RF generator and the control unit is typically about 0.1 seconds or more, a problem arises that accurate data analysis is impossible due to lack of data when a process having a short ON time is performed. In addition, when reducing the gathering time for collecting data in the control unit unit in order to cope with a process having a short RF on time may cause a problem that the load of the control unit unit increases.

The present invention is to solve the various problems including the above problems, a plasma processing apparatus that can effectively perform a plasma process having a short RF on time while using the existing communication system and the control unit and the same It is an object of the present invention to provide a plasma processing control method. However, these problems are exemplary, and the scope of the present invention is not limited thereby.

A plasma processing apparatus according to an aspect of the present invention for solving the above problems is provided. The plasma processing apparatus includes a process chamber including a substrate support unit on which a substrate may be mounted, a gas supply unit for supplying a process gas onto the substrate, and an exhaust unit capable of adjusting the process pressure; A control unit for adjusting the intensity, waveform, formation time, or on / off frequency of the plasma to be formed in the process chamber; A generator for generating pulsed RF to be applied to the process chamber to form the plasma, a detector for detecting in real time the forward power and the reflected power of the RF power information from the RF, and the RF power information from the detector An arithmetic controller configured to extract matching power information of RF power and to generate plasma information including matching state information of RF power applied to the process chamber by using the extracted matching power information and preset threshold power information; An RF generator including a transmitter for transmitting the plasma information generated by the operation controller to the control unit; And a matching unit positioned between the RF generator and the process chamber. It includes.

In the plasma processing apparatus, the arithmetic and control unit may accumulate information on a matching state of the RF power by counting the number of times that the reflected power obtained for each pulse exceeds a first threshold power value while applying the RF power in the form of pulse. Can be obtained.

In the plasma processing apparatus, the arithmetic and control unit may add the accumulated time obtained by adding up the time when the reflected power obtained for each pulse exceeds a first threshold power value while applying the RF power in the form of the pulse. Cumulative information about the matching state can be obtained.

In the plasma processing apparatus, the arithmetic and control unit counts a cumulative number of times that the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than a second threshold power value while applying the RF power in the form of the pulse to determine the RF power. Cumulative information about the matching state can be obtained.

In the plasma processing apparatus, the arithmetic and control unit may add up a cumulative time obtained by adding up a time when the load power minus the reflected power is less than the second threshold power value during the application of the RF power in the pulse form. Cumulative information on the matching state of the RF power may be obtained.

In the plasma processing apparatus, the control unit may generate alarm information from the plasma information or generate plasma compensation information to be applied to the process chamber.

A plasma processing control method according to another aspect of the present invention for solving the above problems is provided. The plasma processing control method may include a first step of applying an RF in a pulse form generated by an RF generator to the process chamber to implement a plasma in the process chamber; A second step of detecting, in real time, a detector of the RF generator by forward power and / or reflected power returned to the RF generator, the RF power information of the RF generated by the RF generator; Generating plasma information including matching state information of RF power applied to the process chamber by using the RF power information detected by the sensing unit and preset threshold power information; A fourth step of transmitting the plasma information to a control unit which controls an intensity, a waveform, a formation time or an on / off frequency of a plasma to be formed in the process chamber; And a fifth step of generating, by the control unit, plasma compensation information from the plasma information.

The plasma processing control method may include, after the fifth step, a sixth step of applying an additional RF to the process chamber according to the plasma compensation information.

In the plasma processing control method, the third step includes counting the number of times that the reflected power exceeds a first threshold power value from the information on the reflected power obtained for each pulse while applying the RF power in the form of pulse. Acquiring cumulative information on a matching state of the RF power, wherein the sixth step includes: applying the reflected power in the RF power of the pulse type to which the reflected power exceeds the first threshold power value; The method may further include applying an RF in the form of pulses to the process chamber.

In the plasma processing control method, the third step includes adding the accumulated time obtained by adding up the time when the reflected power obtained for each pulse exceeds a first threshold power value while applying the RF power in the form of the pulse. Obtaining cumulative information on a matching state of power, wherein the sixth step includes the number of corresponding pulses whose value of the reflected power exceeds the first threshold power value in the applied RF power of the pulse type; The method may further include applying a pulse type RF to the process chamber by the accumulated time.

In the plasma processing control method, the third step includes counting the cumulative number of times that the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than a second threshold power value while applying the RF power in the form of pulse. Acquiring cumulative information on a matching state of power, wherein the sixth step includes: pulse type by the number of pulses whose value of the load power is less than the second threshold power value in the applied RF power of the pulse type; The step of additionally applying the RF of the process chamber may include.

In the plasma processing control method, the third step may include a cumulative time obtained by adding up a time when the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than the second threshold power value while applying the RF power in the pulse form. Summing to obtain cumulative information on a matching state of the RF power, wherein the sixth step includes: applying the corresponding pulse whose value of the load power is less than the second threshold power value in the applied RF power of the pulse type; The method may further include the step of applying a pulse-shaped RF to the process chamber by the cumulative time.

According to some embodiments of the present invention made as described above, a plasma processing apparatus capable of effectively performing a plasma process having a short RF ON time while using a conventional communication system and a control unit, and a plasma processing using the same A control method can be provided. Of course, the scope of the present invention is not limited by these effects.

1 is a diagram illustrating a configuration of a plasma processing apparatus according to embodiments of the present invention.
2 and 3 are diagrams illustrating a configuration of an RF generator and a control unit connected thereto according to embodiments of the present invention.
4 is a diagram illustrating an initial aspect of RF power that may appear in the plasma processing apparatus and the plasma processing control method according to embodiments of the present invention.
5 is a diagram illustrating a unit cycle in an exemplary method of forming a thin film using a plasma processing apparatus according to embodiments of the present invention.
6 is a flowchart sequentially illustrating a plasma processing control method according to embodiments of the present invention.
7 is a flowchart sequentially illustrating a plasma processing control method according to a specific embodiment of the present invention.
8 is a flowchart sequentially illustrating a plasma processing control method according to another specific embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings.

Throughout the specification, when referring to one component, such as a film, region, or substrate, being located "on" another component, the one component directly "contacts" the other component, or It may be interpreted that there may be other components intervening in between. On the other hand, when referring to one component located directly on another component, it is interpreted that there are no other components intervening therebetween.

Embodiments of the present invention will now be described with reference to the drawings, which schematically illustrate ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing. In addition, the thickness or size of each layer in the drawings may be exaggerated for convenience and clarity of description. Like numbers refer to like elements.

RF (Radio Frequency) referred to in the present specification includes the contents defined in the standard dictionary of the IEEE (International Electrotechnical Engineers Association), for example, the frequency corresponding to the region from 10 kHz to 300 GHz Include. For example, RF referred to herein may include the ISM frequencies 13.56 MHz, 27.12 MHz, and 40.68 MHz. The International Telecommunication Union (ITU) distributes the frequency band from 10 kHz to 275 GHz as radio frequency to each service under the Radiocommunication Regulations attached to the International Telecommunication Convention.

1 is a diagram illustrating a configuration of a plasma processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a plasma processing apparatus 1000 according to an embodiment of the present invention may include a substrate support 830 on which a substrate may be mounted, a gas supply unit 820 for supplying a process gas onto a substrate, and a process A process chamber 800 including an exhaust portion 850 capable of adjusting pressure; An RF generator 100 capable of applying RF power to the process chamber 800 to form a plasma; A matching unit 500 that may form a matching network between the RF generator 100 and the process chamber 800; And a control unit 300 that adjusts the intensity, waveform, formation time, or on / off frequency of the plasma to be formed in the process chamber 800.

2 and 3 are diagrams illustrating a configuration of an RF generator and a control unit connected thereto according to embodiments of the present invention.

2 and 3, the RF generator 100 includes a generation unit 120 generating an RF to be applied to the process chamber 800 to form a plasma, and forward power and reflected power that are RF power information from the RF. Detection power 140 in real time to detect the matching power information of the RF power through the RF power information from the detection unit 140, using the extracted matching power information and the predetermined threshold power information process chamber ( An operation control unit 160 for generating plasma information including matching state information of RF power applied to the 800, and a transmission unit for transmitting the plasma information generated by the operation control unit 160 to the control unit 300 ( 180).

The RF generator 100 is connected to the control unit 300 and the data communication line 200. The data communication line 200 may use, for example, a communication method such as Ethernet, EtherCAT, Device Net, or RS-232.

The control unit 300 is the intensity of the plasma to be formed in the process chamber 800 to which the RF generated by the generation unit 120 is applied, the waveform, the formation time, the time of providing and / or the number of on-off (off) As a device capable of controlling the power, for example, it may be implemented as a control PC of the plasma processing apparatus 1000. Furthermore, according to an embodiment of the present invention, the control unit 300 receives the plasma information from the transmitter 180. The control unit 300 may generate alarm information from the plasma information or generate plasma compensation information to be applied to the process chamber 800.

The RF power information detected by the detector 140 includes forward power and reflected power. Forward power refers to RF power generated by the generation unit 120 and transmitted to the process chamber 800 corresponding to the power load. On the other hand, impedance matching is necessary to achieve maximum power transfer between the source and load of RF energy. If the matching is not properly implemented in the RF circuit, reflected power is generated, and the reflected power is a loss factor in power transmission and further shortens the life of the RF generator 100.

According to the technical idea of the present invention, the RF generator 100 itself monitors and analyzes forward power, reflected power, and load power in real time, and analyzes the result of the plasma processing apparatus. It transmits to the control unit 300 of (1000). In order to implement this, the operation control unit 160 of the RF generator 100 may determine whether the RF power is abnormal based on various criteria.

According to the RF generator 100 having such a configuration, the RF generator 100 performs data analysis internally so that the gathering time is fast, and the reflected power monitoring in the unit of several milliseconds (msec) enables short RF on. Even during the type process, accurate analysis is possible, and the analysis result may be transmitted to the control unit 300 in the form of plasma information. As a result, the control unit 300 may generate alarm information or plasma compensation information on the abnormality of the RF power transmission process without a data load without adding a separate device.

The technical idea of the present invention described above can be applied to a plasma processing apparatus for applying RF power in the form of pulse and a plasma processing control method using the same. Such aspects of RF power will be described first.

4 is a diagram illustrating an initial aspect of RF power that may appear in the plasma processing apparatus and the plasma processing control method according to embodiments of the present invention.

Referring to FIG. 4, a horizontal axis represents a process time and a vertical axis represents an RF power value. An aspect of applying the RF power in the form of pulses according to time is shown to implement a pulsed plasma. As the process proceeds, the impedance matching is gradually and stably implemented, so that the value of the reflected power is gradually decreased and the value of the delivered power is gradually increased, so that the plasma process can be stabilized. .

The operation control unit 160 matches the RF power based on whether the value of the reflected power obtained for each pulse among the plurality of pulses (for example, A to F) exceeds the predetermined first threshold value TH1. Cumulative information about the state may be obtained and plasma information including the plasma matching state information in the process chamber 800 may be generated from the accumulated information.

For example, when each of the times (t3a, t3b, t3c, t3d, t3e, t3f) provided with each pulse is set to 200 msec and the first threshold power value is set to 30W, the pulse A is reflected. Since the power exceeds 30 W for 200 msec, the RF power may be determined to be a problem, and the first abnormal count may be applied. Furthermore, since the reflected power exceeds 30W for 200 msec, the pulse B, the pulse C, and the pulse D are determined to have a problem with the RF power, so that the second, third and fourth abnormal counts are respectively performed. Applicable However, in the pulse E, the count does not increase because the reflected power does not continuously exceed 30W for 200 msec. In the pulse F, the count does not increase because the reflected power is less than 30W. In this case, the process variation may be minimized by generating plasma information (eg, matching state information of RF power) in consideration of the cumulative number of times (4 times) determined that the RF power is abnormal and further compensating a subsequent plasma process.

On the other hand, the operation controller 160 is delivered power that can be understood as load power as a difference value between the forward power and the reflected power among the plurality of pulses (for example, A to F). It may be determined whether the RF power is abnormal based on the number of pulses whose power is less than the predetermined second threshold power value TH2.

For example, when each of the provided times t3a, t3b, t3c, t3d, t3e, t3f is set to 200 msec, and the predetermined second threshold power value TH2 is set to 270W, the pulse (A) may determine that the RF power is a problem because the load power does not exceed 270W, and may apply the first abnormal count. Furthermore, since pulses B, C, and D do not exceed 270W of load power, it is determined that RF power is a problem, and the second, third, and fourth abnormal counts are applied, respectively. can do. However, in pulse E, the abnormal count did not increase because the load power exceeded 270W in at least some intervals, and in the pulse F, the abnormal count did not increase because the load power exceeded 270W. In this case, the process variation may be minimized by generating plasma information (eg, matching state information of RF power) in consideration of the cumulative number of times (4 times) in which the RF power is determined to be abnormal, and additionally compensating a subsequent plasma process.

5 is a diagram illustrating a unit cycle in an exemplary method of forming a thin film using a plasma processing apparatus according to embodiments of the present invention. By applying the RF power of the pulse form shown in Figure 4 to the process chamber can be implemented as a pulsed plasma (pulsed plasma) shown in FIG.

In the method of forming a thin film shown in FIG. 5, at least one unit cycle T is performed to form a unit deposition film on a substrate, and the unit cycle is a source gas on a substrate disposed in the process chamber 800. (A) providing a source gas on the substrate such that at least a portion of the is adsorbed; Providing a reaction gas on the substrate (b); Activating the reaction gas in a plasma state on the substrate; (D) providing a first inert gas on the substrate; And (e) providing a second inert gas on the substrate; It may include. By applying the RF power in the form of pulse shown in Figure 4 to the process chamber can be implemented as a pulsed plasma (pulsed plasma) shown in step (c) of FIG.

Hereinafter, the plasma processing apparatus 1000 may include the RF generator 100, the control unit 300, and the process chamber 800 in which the RF power may be applied and the substrate may be mounted therein. A plasma processing control method according to embodiments of the present invention will be described.

6 is a flowchart sequentially illustrating a plasma processing control method according to embodiments of the present invention.

1, 2 and 6, the plasma processing control method according to the embodiments of the present invention processes the RF in the pulse form generated in the RF generator 100 to implement the plasma in the process chamber 800 A first step S100 of applying to the chamber 800; Forward power, which is RF power information on the RF generated by the RF generator 100, and / or reflected power returned to the RF generator 100 in real time in the detector 140 of the RF generator 100. Detecting a second step (S200); A third step (S300) of generating plasma information including matching state information of RF power applied to the process chamber 800 using the RF power information detected by the detector 140 and the predetermined threshold power information; A fourth step (S400) of transmitting the plasma information to the control unit 300 for adjusting the intensity, waveform, formation time or on / off frequency of the plasma to be formed in the process chamber 800; And a fifth step (S500) of generating plasma compensation information from the plasma information in the control unit unit 300.

Subsequently, after the fifth step S500, a sixth step S600 of applying additional RF to the process chamber 800 according to the plasma compensation information; A seventh step S700 of providing the plasma compensation information as an alarm to a user of the plasma processing apparatus 1000; And an eighth step S800 of performing an interlock process on the plasma processing apparatus 1000 by reflecting the plasma compensation information. At least one step selected from among the above may be further performed.

Among the above-mentioned steps, in particular, the third step S300 may include determining whether the RF power is abnormal from the accumulated cumulative data of the RF power. The RF generator 100 having such a configuration may include a memory unit (not shown) in order to accumulate the result values of the real time monitoring. According to this, in the third step (S300), since the RF generator 100 performs data analysis by itself, the gathering time is fast, and the reflected power monitoring of several milliseconds (msec) is possible, so the short RF on Even during the type process, accurate analysis is possible, and only the plasma information, which is an analysis result, may be transmitted to the control unit 300.

Hereinafter, a more specific embodiment of the above-described plasma processing control method will be described.

4 is a diagram illustrating an initial aspect of RF power that may appear in the plasma processing apparatus and the plasma processing control method according to embodiments of the present invention, and FIG. 7 is a specific example of the method illustrated in FIG. 6. 1 is a flowchart sequentially illustrating a plasma processing control method according to an exemplary embodiment of the present invention. Thus, each of the steps S101 to S601 shown in FIG. 7 is a specific embodiment of each of the steps S100 to S600 shown in FIG. 6.

1, 2, 4, and 7, the plasma processing control method according to an embodiment of the present invention is a pulse type generated by the RF generator 100 to implement plasma in the process chamber 800. A first step S101 of applying RF to the process chamber 800; A second step S201 of detecting reflected power returned to the RF generator 100 in real time by the detector 140 of the RF generator; A third operation for generating plasma information including the matching state information of the RF power applied to the process chamber 800 by using the detected power matching information of the reflected power and the predetermined threshold power information in the operation controller 160 of the RF generator; Step S301; A fourth step (S401) of transmitting the plasma information to the control unit 300 for adjusting the intensity, waveform, formation time or on / off frequency of plasma to be formed in the process chamber 800; A fifth step (S501) of generating plasma compensation information from the plasma information in the control unit unit 300; And a sixth step S601 of applying additional RF to the process chamber 800 according to the plasma compensation information.

As an example, the operation control unit 160 of the RF generator 100 may generate the first threshold power value (TH1 of FIG. 4) from the information on the reflected power obtained for each pulse while applying the RF power in the form of a pulse. By counting the number of times greater than) to obtain cumulative information on the matching state of the RF power, it is possible to generate the plasma information in the process chamber 800 from the accumulated information. In this case, the third step (S301) described above is the number of times the reflected power exceeds the first threshold power value (TH1) from the information on the reflected power obtained for each pulse while applying the RF power in the form of the pulse. Counting to obtain cumulative information on the matching state of the RF power, and the sixth step (S601) is that the value of the reflected power in the RF power of the applied pulse form is the first threshold power value (TH1) The method may further include the step of applying the RF in the form of pulses to the process chamber 800 by the number of the corresponding pulses exceeding). When the foregoing is applied to the form of RF power shown in FIG. 4, the pulses A, B, C, and D whose value of the reflected power exceeds the first threshold power value TH1 are checked and counted. RF in the form of pulses may be additionally applied to the process chamber 800 by the number of pulses. Here, whether or not the value of the reflected power in the pulse E exceeds the first threshold power value TH1 (Z) may be arbitrarily determined according to the aspect of the plasma process.

As another example, the operation control unit 160 of the RF generator 100, the time that the reflected power exceeds the first threshold power value from the information on the reflected power obtained for each pulse while applying the RF power of the pulse form The cumulative time obtained by summing up may be added to obtain cumulative information on the matching state of the RF power, and plasma information in the process chamber 800 may be generated from the accumulated information. In this case, the above-described third step S301 is a time for which the reflected power exceeds the first threshold power value TH1 from the information on the reflected power obtained for each pulse while applying the RF power in the form of pulse. Summing up the accumulated cumulative time to obtain cumulative information on the matching state of the RF power, wherein the sixth step (S601) includes the value of the reflected power in the applied RF power of the pulse type; The method may further include applying an RF in the form of pulse to the process chamber 800 by the accumulated time as many as the number of the corresponding pulses exceeding one threshold power value TH1. When the above description is applied to the form of RF power shown in FIG. 4, the cumulative time obtained by summing the times t3a, t3b, t3c, and t3d when the value of the reflected power exceeds the first threshold power value TH1 is checked. By adding up the number of pulses A, B, C, and D, the pulse type RF may be additionally applied to the process chamber 800 by the accumulated time. Here, whether or not the value of the reflected power in the pulse E exceeds the first threshold power value TH1 (Z) may be arbitrarily determined according to the aspect of the plasma process.

As described above, when the value of the reflected power among the RF power exceeds the first threshold power value TH1, the efficiency of power transfer from the RF source to the load is reduced, and the plasma may not be generated or generated in the process chamber 800. The quality of the product becomes poor. Therefore, during the time of applying the RF power to the process chamber 800 (S101), the RF power is applied in the pulse in which the reflected power value exceeds the first threshold power value TH1, but the plasma process is performed. It did not seem to proceed effectively. In this case, the process variation can be minimized by additionally compensating the subsequent plasma process by the corresponding pulse determined that the RF power is abnormal. Step S601 corresponds to this compensation process. This compensation process may be performed continuously following the basic process (steps S101 to S501). If the compensation process is performed at a sufficient time interval from the basic process, the process of transferring power from the RF source to the load takes time for impedance matching again, so that the plasma process may not be stabilized initially. Because there is.

FIG. 8 is a flowchart illustrating another method of controlling the plasma process according to another embodiment of the present invention. Accordingly, each of the steps S102 to S602 shown in FIG. 8 is a specific embodiment of each of the steps S100 to S600 shown in FIG. 6.

1, 2, 4, and 8, the plasma processing control method according to another embodiment of the present invention is a pulse type generated by the RF generator 100 to implement plasma in the process chamber 800. A first step (S102) of applying the RF to the process chamber 800; A second step of detecting, in real time, the load power corresponding to the difference between the forward power transmitted from the RF generator 100 and the reflected power returned to the RF generator 100 in the detector 140 of the RF generator ( S202); A third operation for generating plasma information including the matching state information of the RF power applied to the process chamber 800 by using the detected power information of the load power and the predetermined threshold power information in the operation controller 160 of the RF generator; Step S302; A fourth step (S402) of transmitting the plasma information to the control unit 300 for adjusting the intensity, waveform, formation time or on / off frequency of the plasma to be formed in the process chamber 800; A fifth step (S502) of generating plasma compensation information from the plasma information in the control unit 300; And a sixth step S602 of applying additional RF to the process chamber 800 according to the plasma compensation information.

As an example, the operation control unit 160 of the RF generator 100 may have a load power obtained by subtracting the reflected power from the forward power obtained for each pulse while applying the RF power in the form of pulse, which is less than a second threshold power value TH2. The cumulative counting may be counted to obtain cumulative information on the matching state of the RF power, and plasma information in the process chamber 800 may be generated from the accumulated information. In this case, the third step (S302) described above counts the cumulative number of times that the load power obtained by subtracting the reflected power from the forward power obtained for every pulse is less than a second threshold power value (TH2) while applying the RF power in the form of a pulse. And acquiring cumulative information on the matching state of the RF power, wherein the sixth step (S602), wherein the value of the load power in the applied RF power of the pulse form is the second threshold power value ( And additionally applying the RF in the form of pulses to the process chamber 800 by the number of corresponding pulses less than TH2). Applying the above description to the form of RF power shown in FIG. 4, counting pulses A, B, C, D whose value of the load power is less than the second threshold power value TH2, and by the number of the corresponding pulses. Pulsed RF may be additionally applied to the process chamber 800. Here, whether the value of the load power in the pulse E exceeds the second threshold power value TH2 may be arbitrarily determined according to the aspect of the plasma process.

As another example, the arithmetic and control unit 160 of the RF generator 100 adds the time when the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than a second threshold power value while applying the RF in the form of pulse. The cumulative time may be added to obtain cumulative information on the matching state of the RF power, and plasma information in the process chamber 800 may be generated from the accumulated information. In this case, the above-described third step S302 is performed by adding up the time when the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than the second threshold power value TH2 while applying the RF power in the form of pulse. Summing cumulative time to obtain cumulative information on the matching state of the RF power, wherein the sixth step (S602) includes the second value of the load power in the applied RF power of the pulse type; The method may further include applying the RF in the form of pulses to the process chamber 800 by the number of corresponding pulses that are less than the threshold power value. When the above description is applied to the form of RF power shown in FIG. 4, the cumulative time obtained by summing the times t3a, t3b, t3c, and t3d in which the value of the load power is less than the second threshold power value TH2 is added up, and The number of pulses A, B, C, and D may be additionally applied to the process chamber 800 as much as the cumulative time. Here, whether the value of the load power in the pulse E is less than the second threshold power value TH2 may be arbitrarily determined according to the aspect of the plasma process.

As described above, when the value of the load power among the RF power is less than the set second threshold value TH2, the quality of plasma may be generated even if the plasma is not generated or generated in the process chamber 800 because the efficiency of power transfer from the RF source to the load is reduced. This becomes bad. Therefore, the RF power is applied during the time when the value of the load power is less than the predetermined second threshold value TH2 during the time of performing the first step S102 of applying the RF power to the process chamber 800, but using plasma. It can be seen that the process did not proceed effectively. In this case, the process variation can be minimized by additionally compensating the subsequent plasma process by the corresponding pulse determined that the RF power is abnormal. Step S602 corresponds to this compensation process. This compensation process may be performed continuously following the basic process (steps S102 to S502). If the compensation process is performed at a sufficient time interval from the basic process, the process of transferring power from the RF source to the load takes time for impedance matching again, so that the plasma process may not be stabilized initially. Because there is.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

100: RF Generator
120: power generation unit
140: detector
160: operation control unit
180: sending part
200: data communication line
300: control unit
500: matching part
800: process chamber
1000: Plasma Treatment Device

Claims (12)

A process chamber including a substrate support on which a substrate can be mounted, a gas supply for supplying a process gas on the substrate, and an exhaust part capable of adjusting a process pressure;
A control unit for adjusting the intensity, waveform, formation time, or on / off frequency of plasma to be formed in the process chamber;
A generation unit for generating a pulse type RF to be applied to the process chamber to form the plasma, a detector for detecting in real time the forward power and the reflected power of the RF power information from the RF, the RF power information from the detection unit An arithmetic controller configured to extract matching power information of RF power and to generate plasma information including matching state information of RF power applied to the process chamber using the extracted matching power information and preset threshold power information; An RF generator including a transmitter for transmitting the plasma information generated by the operation controller to the control unit; And
A matching unit located between the RF generator and the process chamber; Including,
The connection of the RF generator and the control unit and the operation control unit and the control unit are implemented through a common data communication line.
As long as the RF generator extracts the matching power information and generates the plasma information, the control unit may adjust the intensity, waveform, formation time, or on / off frequency of plasma to be formed in the process chamber without load of information processing. Characterized in that
Plasma processing apparatus. The method of claim 1,
The calculation control unit may obtain cumulative information on the matching state of the RF power by counting the number of times that the reflected power obtained for each pulse exceeds a first threshold power value while applying the RF power in the form of pulse. . The method of claim 1,
The calculation controller may add accumulated information on a matching state of the RF power by adding up a cumulative time obtained by adding up a time when the reflected power obtained for each pulse exceeds a first threshold power value while applying the RF power in the form of a pulse. Plasma processing apparatus. The method of claim 1,
The calculation control unit may accumulate the cumulative information on the matching state of the RF power by counting a cumulative number of times that the load power obtained by subtracting the reflected power from the forward power obtained for each pulse during the pulse type RF power is less than a second threshold power value. Obtaining a plasma processing apparatus. The method of claim 1,
The operation control unit may add a accumulated time obtained by adding up a time when the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than a second threshold power value while applying the RF power in the form of a pulse to match the RF power. Obtaining cumulative information for the plasma processing apparatus. The method of claim 1,
And the control unit unit generates alarm information from the plasma information or generates plasma compensation information to be applied to the process chamber. A control unit for adjusting the intensity, waveform, formation time, or on / off frequency of the plasma to be formed in the process chamber; A generation unit for generating pulse type RF to be applied to the process chamber to form the plasma, a detection unit for detecting in real time forward power and reflected power of the RF power information from the RF, and RF power information from the detection unit An arithmetic controller configured to extract matching power information of RF power and to generate plasma information including matching state information of RF power applied to the process chamber by using the extracted matching power information and preset threshold power information; And an RF generator including a transmitter for transmitting the plasma information generated by the operation controller to the control unit, wherein the control unit is configured to extract the matching power information from the RF generator and generate the plasma information. The process without the load of processing Plasma intensity of the to be formed in a member, the plasma processing apparatus characterized in that to control the waveform, forming time, or on-off times,
A first step of applying an RF in a pulse form generated by the RF generator to the process chamber to implement a plasma in the process chamber;
A second step of detecting, in real time, the forward power and RF reflected information returned to the RF generator from the RF generator generated by the RF generator in the detector;
A third step of generating, by the operation controller, plasma information including matching state information of RF power applied to the process chamber by using the RF power information detected by the sensing unit and preset threshold power information;
Transmitting the plasma information to the control unit for adjusting the intensity, waveform, formation time, or on / off frequency of plasma to be formed in the process chamber; And
A fifth step of generating, by the control unit, plasma compensation information from the plasma information; Including,
Plasma treatment control method. The method of claim 7, wherein
And a sixth step of applying an additional RF to the process chamber according to the plasma compensation information after the fifth step. The method of claim 8,
The third step includes counting the number of times that the reflected power exceeds a first threshold power value from the information on the reflected power obtained for each pulse while applying the RF power in the form of a pulse to the matching state of the RF power. Obtaining cumulative information about the
The sixth step may further include applying pulse-shaped RF to the process chamber by the number of pulses whose value of the reflected power exceeds the first threshold power value in the applied RF-type electric power. doing,
Plasma treatment control method. The method of claim 8,
In the third step, the cumulative time for the matching state of the RF power may be accumulated by adding up the accumulated time obtained by adding up the time when the reflected power obtained for each pulse exceeds the first threshold power value while applying the RF power in the form of pulse. Obtaining information,
In the sixth step, the pulse type RF is additionally applied to the process chamber by the accumulated time by the number of pulses whose value of the reflected power exceeds the first threshold power value in the applied RF power of the pulse type. Comprising the steps of:
Plasma treatment control method. The method of claim 8,
The third step includes counting the number of times that the load power obtained by subtracting the reflected power from the forward power obtained for each pulse during the pulse type RF power is less than a second threshold power value, so that the RF power is matched. Obtaining cumulative information about the
The sixth step further includes the step of additionally applying pulse-shaped RF to the process chamber by the number of pulses whose value of the load power is less than the second threshold power value in the applied RF-shaped electric power.
Plasma treatment control method. The method of claim 8,
In the third step, the RF power is added by adding up a cumulative time obtained by adding up a time when the load power obtained by subtracting the reflected power from the forward power obtained for each pulse is less than a second threshold power value while applying the RF power in the form of pulse. Obtaining cumulative information about a matching state of,
The sixth step may further include applying the pulse type RF to the process chamber by the accumulated time by the number of pulses whose value of the load power is less than the second threshold power value in the applied RF power of the pulse type. Including,
Plasma treatment control method.

Images