KR102045441B1 - Heat treatment apparatus and heat treatment method - Google Patents

Heat treatment apparatus and heat treatment method Download PDF

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Publication number
KR102045441B1
KR102045441B1 KR1020130071418A KR20130071418A KR102045441B1 KR 102045441 B1 KR102045441 B1 KR 102045441B1 KR 1020130071418 A KR1020130071418 A KR 1020130071418A KR 20130071418 A KR20130071418 A KR 20130071418A KR 102045441 B1 KR102045441 B1 KR 102045441B1
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KR
South Korea
Prior art keywords
heat treatment
tft
tft element
voltage
substrate
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KR1020130071418A
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Korean (ko)
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KR20150000045A (en
Inventor
최용호
서현식
서경한
Original Assignee
엘지디스플레이 주식회사
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Priority to KR1020130071418A priority Critical patent/KR102045441B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The heat treatment apparatus according to the embodiment includes a substrate on which a TFT element is formed, a seating portion including a plurality of regions so as to correspond to a position at which the substrate is to be seated, and a heater portion disposed in a plurality of regions of the seating portion; And a control unit which collects the voltage-specific voltage characteristics of the TFT element and controls the heater unit to heat-treat the TFT element under different conditions according to the collected position-specific voltage characteristics.
According to the embodiment, heat treatment under different conditions is performed according to TFT-specific characteristics of each position, so that the entire TFT element formed on the substrate can maintain voltage characteristics under desired conditions.

Description

Heat Treatment Apparatus and Heat Treatment Method {HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD}

The embodiment relates to a heat treatment apparatus, and more particularly, to a heat treatment apparatus and a heat treatment method for heat treatment of an oxide thin film transistor (Oxide TFT).

Recently, Liquid Crystal Display (LCD), Plasma Display Panel (PDP), and Organic Light Emitting Diodes (OLED) are used instead of CRT (Cathode Ray Tube). Such flat panel display devices are rapidly developing.

BACKGROUND ART Oxide thin film transistors (Oxide TFTs) are in the spotlight due to the demand for larger display screens and higher image quality. Such oxide TFTs have the advantage of having the fastest electron mobility, an essential element of high resolution.

Unlike other TFTs, the oxide TFT has a characteristic that the device characteristics change due to heat treatment conditions. Thus, after the device is completed, it is possible to adjust the characteristics of the device to the desired conditions through an additional heat treatment process.

In the related art, when the voltage V th characteristic of the device deviates from the reference value, heat treatment is performed on the entire surface of the substrate at the same temperature to improve or decrease the voltage V th characteristic of the TFT device as a whole.

However, since the heat treatment is performed at the same temperature over the entire area of the substrate, the TFT device which was initially defective can be normalized. On the contrary, the TFT device which was initially normal is defective again.

In order to solve the above problems, an embodiment is to provide a heat treatment apparatus and a heat treatment method for ensuring a uniform voltage characteristics as a whole.

In order to achieve the above object, a heat treatment apparatus according to an embodiment includes a substrate having a TFT element formed thereon, a mounting portion including a plurality of regions so as to correspond to a position at which the substrate is seated and the TFT element is disposed, and a plurality of the mounting portions. The heater unit disposed in the region of the control unit for collecting the voltage characteristics for each position of the TFT element, and controls the heater unit to heat treatment the TFT element under different conditions according to the collected position-specific voltage characteristics.

In addition, in order to achieve the above object, the heat treatment method according to the embodiment is a step of collecting the voltage characteristics for each position of the plurality of TFT elements formed on the substrate, and the TFT under different conditions according to the voltage characteristics for each position of the TFT element And heat treating the device.

According to the embodiment, heat treatment under different conditions is performed according to TFT-specific characteristics of each position, so that the entire TFT element formed on the substrate can maintain voltage characteristics under desired conditions.

In addition, the embodiment has the effect of preventing the occurrence of a defective TFT device to maximize the yield.

1 is a cross-sectional view showing a heat treatment apparatus according to an embodiment.
2 is a plan view showing a mounting portion of the heat treatment apparatus according to the embodiment.
3 is a flowchart illustrating a heat treatment method according to an embodiment.
4 and 5 are graphs showing the detailed operation of the heat treatment method according to the embodiment.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a heat treatment apparatus according to the embodiment, Figure 2 is a plan view showing a seating portion of the heat treatment apparatus according to the embodiment.

Referring to FIG. 1, a heat treatment apparatus according to an embodiment may include a substrate 100, a seating part 200 on which the substrate 100 is seated, a heater part 300 that heats each region of the seating part 200, and The control unit 400 collects the voltage characteristics of each TFT element 110 formed on the substrate 100 and controls the heater unit 300 to heat-treat the TFT elements under different conditions according to the collected position-specific voltage characteristics. ).

The substrate 100 may be a substrate on which an oxide TFT 110 is formed. A plurality of oxide TFTs 110 may be formed on one surface of the substrate 100. The plurality of oxide TFTs 110 may be formed for each region. The oxide TFT 110 may be disposed on one surface of the substrate to be spaced apart from each other. The oxide TFT 110 may be formed on the upper surface of the substrate. Alternatively, it may be formed on the bottom surface of the oxide TFT substrate.

The seating part 200 may be formed in a shape corresponding to the substrate 100. The seating unit 200 may be formed in a quadrangular shape to correspond to the substrate 100, and may be larger than the size of the substrate 100.

The seating part 200 may include the first area S1 to the ninth area S9. The first to ninth regions S9 may be regions in which the TFT elements 110 formed on one surface of the substrate 100 are disposed. The seating unit 200 is divided into nine regions, but the present invention is not limited thereto, and the number of seating units 200 may vary depending on the formation regions of the TFT elements 110 formed on the substrate 100.

The seating part 200 may have a groove formed in an upper surface thereof to form the first area S1 to the ninth area S9. The groove may be concave on the seat 200, and heat of the heater may be stably transmitted to the TFT elements 110 by the groove.

The heater part 300 may be disposed on the seating part 200. The heater 300 may be disposed inside the seating part 200. The heater part 300 may be disposed at a position corresponding to the first area S1 to the ninth area S9 formed in the seating part 200. As a result, the heater unit 300 may heat-treat the TFT elements 110 disposed in the first region S1 to the ninth region S9. The heater 300 may be disposed on the lower surface of the seating part 200 in addition to the inner side of the seating part 200.

The controller 300 controls the heater 300 to selectively apply heat to the substrate 100 on which the TFT device 110 mounted on the seating part 200 is formed. To this end, the control unit 300 may be connected to the heater unit 300 disposed in the first region S1 to the ninth region S9 of the seating unit 100.

The control unit 300 controls the heater unit 300 by collecting voltage characteristics for each position of the TFT element 110 and determining a heat treatment condition of the TFT element 110 corresponding thereto. In this case, when the voltage characteristic of the TFT element 110 is greater than or equal to the reference value, the heat treatment may be performed at a predetermined temperature or more. If the voltage characteristic of the TFT element 110 is lower than or equal to the reference value, the heat treatment may be performed below the predetermined temperature.

Hereinafter, the operation of the controller 300 will be described in detail with reference to the accompanying drawings. 3 is a flowchart illustrating a heat treatment method according to an embodiment, and FIGS. 4 and 5 are graphs showing detailed operations of the heat treatment method according to an embodiment. 3 to 5 will be described with reference to the reference numerals of FIG.

Referring to FIG. 3, the heat treatment method according to the embodiment may include collecting voltage characteristics of each TFT element formed on a substrate (A100), voltage characteristics of the TFT element in which the voltage characteristics of the TFT elements are measured in advance, and Comparing (A200) and performing a heat treatment according to the heat treatment conditions according to the voltage characteristics of the TFT device (A300).

The controller 300 may collect the TFT device 110 characteristics. The TFT device 110 may include a driving voltage V th , a mobility, and an s-factor. The controller 300 may collect the characteristics of the TFT device 110 to secure voltage characteristics of the TFT device 110 along the substrate 100.

After the step A100 of collecting the positional voltage characteristics of the TFT device 110 is completed, the step A200 of comparing the measured voltage characteristics of the TFT device 110 may be performed. The controller 300 may preset the heat treatment temperature band and the temperature time according to the voltage characteristic of the TFT element 110. These heat treatment conditions may be set and stored in advance by the operator to the desired conditions.

After the step A200 of comparing the voltage characteristic of each TFT element 110 with the voltage characteristic of the TFT element 110 pre-stored in the controller 300, the temperature and time according to the voltage characteristic of the TFT element 110 are completed. A step (A300) of performing a heat treatment may be performed.

For example, when the driving voltage of the TFT element 110 positioned in the first region S1 is 5V, the controller 300 selects a heat treatment condition of a heat treatment temperature and a time corresponding to a voltage characteristic of 5V, and the selected heat treatment condition. Heat treatment is performed on the TFT element 110 to lower the driving voltage.

As shown in FIG. 4, when the voltage V 1 characteristic of the TFT element 110 becomes higher than the reference voltage R characteristic, heat treatment is performed at a predetermined temperature or more to control the voltage within the reference voltage R characteristic range. do. The constant temperature may range from 200 degrees to 240 degrees.

On the other hand, as shown in FIG. 5, when the voltage (V 2 ) characteristic of the TFT element 110 becomes lower than the reference voltage (R) characteristic, heat treatment is performed below a predetermined temperature to control within the reference voltage characteristic (R) range. It becomes possible.

The controller 300 may perform heat treatment on the first region S1 to the ninth region S9 of the seating part 100 at different heat treatment conditions, for example, at different temperatures and times, according to the characteristics of each TFT element 110. Each of the heaters 300 can be controlled.

As described above, in the embodiment, the TFT device of the initial failure can improve the normal device characteristics according to a predetermined specification, and the TFT device, which is the initial normal, still has the effect of maximizing the yield by maintaining the normal TFT device. .

Although described above with reference to the drawings and embodiments, those skilled in the art will understand that the embodiments can be variously modified and changed without departing from the spirit of the embodiments described in the claims below. Could be.

100: substrate 110: TFT element
200: seating unit 300: heater unit
400: control unit R: reference voltage

Claims (9)

A seating part on which a substrate on which the TFT element is formed is seated and including a plurality of regions so as to correspond to a position where the TFT element is disposed;
Heater parts respectively disposed in a plurality of areas of the seating part; And
A control unit which collects the voltage characteristics of each TFT element of the TFT element and controls the heaters to heat-process the TFT elements under different conditions according to the collected position-specific voltage characteristics,
The control unit
To control the respective heater unit to perform the heat treatment for the plurality of areas at different times according to the collected position-specific voltage characteristics,
Heat treatment device. The method of claim 1,
And the heater part is disposed to correspond to each area of the seating part. The method of claim 1,
The heater unit heat treatment apparatus, characterized in that disposed on the inner or lower surface of the seating portion. The method of claim 1,
And a heat treatment temperature and a time information condition according to voltage characteristics of the TFT element are stored in the control unit in advance. The method of claim 4, wherein
And the heat treatment is performed at a heat treatment temperature corresponding to the voltage characteristic condition if the voltage characteristic for each position of the collected TFT element corresponds to a voltage characteristic condition measured in advance. The method of claim 5,
And performing heat treatment at a predetermined temperature or more when the voltage characteristic of the TFT element is greater than or equal to a reference value, and performing heat treatment below a predetermined temperature if the voltage characteristic of the TFT element is less than the reference value. Collecting voltage-specific voltage characteristics of the plurality of TFT elements formed on the substrate; And
Controlling the heaters disposed in a plurality of regions of the seating portion on which the substrate is seated, so as to heat-treat the TFT elements under different conditions according to the voltage characteristics of the TFT elements according to positions;
Controlling the respective heater units to heat-treat the TFT elements under different conditions may include controlling each heater unit to perform heat treatment at different times for each of the plurality of regions according to the position-specific voltage characteristics of the TFT elements. Including,
Heat treatment method. The method of claim 7, wherein
The controlling of each heater unit to heat-treat the TFT elements under different conditions may include performing heat treatment at a heat treatment temperature corresponding to a voltage characteristic condition if the voltage characteristic of each of the collected TFT elements corresponds to a pre-measured voltage characteristic condition. Heat treatment method performed. The method of claim 8,
The controlling of each heater unit to heat-treat the TFT elements under different conditions may be performed if the voltage characteristic of the TFT element is greater than or equal to a reference value, and the heat treatment is performed at or above a predetermined temperature. Heat treatment method characterized in that the heat treatment.
KR1020130071418A 2013-06-21 2013-06-21 Heat treatment apparatus and heat treatment method KR102045441B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11600793B2 (en) 2020-03-25 2023-03-07 Samsung Display Co., Ltd. Display panel having transmission area between pixel circuits and electronic apparatus including the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379859B1 (en) 1994-05-02 2003-07-18 소니 가부시끼 가이샤 Manufacturing method of semiconductor chip for display
KR100694501B1 (en) 2005-10-11 2007-03-13 오성엘에스티(주) Apparatus for heat-treating a substrate
US20070224839A1 (en) * 2006-03-22 2007-09-27 Tokyo Electron Limited Heat treating apparatus, heat treating method and storage medium
JP2008066646A (en) * 2006-09-11 2008-03-21 Nec Electronics Corp Annealing apparatus, annealing method and manufacturing method for semiconductor device
KR101066013B1 (en) 2009-09-09 2011-09-20 주식회사 신성에프에이 Apparatus for laminating and thereof method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450240B2 (en) * 1999-11-25 2003-09-22 Ｎｅｃエレクトロニクス株式会社 Lamp annealing apparatus and processing temperature control method for lamp annealing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379859B1 (en) 1994-05-02 2003-07-18 소니 가부시끼 가이샤 Manufacturing method of semiconductor chip for display
KR100694501B1 (en) 2005-10-11 2007-03-13 오성엘에스티(주) Apparatus for heat-treating a substrate
US20070224839A1 (en) * 2006-03-22 2007-09-27 Tokyo Electron Limited Heat treating apparatus, heat treating method and storage medium
JP2008066646A (en) * 2006-09-11 2008-03-21 Nec Electronics Corp Annealing apparatus, annealing method and manufacturing method for semiconductor device
KR101066013B1 (en) 2009-09-09 2011-09-20 주식회사 신성에프에이 Apparatus for laminating and thereof method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11600793B2 (en) 2020-03-25 2023-03-07 Samsung Display Co., Ltd. Display panel having transmission area between pixel circuits and electronic apparatus including the same

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