KR101328881B1 - Ion implanting apparatus, ion implanting method, liquid crystal display device and method of manufacturing the same - Google Patents

Abstract

An ion implantation apparatus and an ion implantation method capable of simultaneously performing ion implantation and annealing are disclosed. Disclosed are a liquid crystal display manufactured using an ion implantation apparatus and a method of manufacturing the same.

The ion implantation apparatus of the present invention, the loading chamber; And an ion implantation chamber connected to the loading chamber to perform an ion implantation process on a substrate, wherein the loading chamber performs an annealing process on the ion implanted substrate.

Ion Implantation, Annealing, Loading Chamber, Heat Generator, Reflector

Description

Ion implantation apparatus, ion implantation method, liquid crystal display device and manufacturing method thereof {Ion implanting apparatus, ion implanting method, liquid crystal display device and method of manufacturing the same}

1 schematically shows an ion implantation apparatus according to the invention.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

3 is a plan view of the ion implantation apparatus of FIG.

4 is a bottom view of the ion implantation apparatus of FIG. 1.

5 is a cross-sectional view taken along the line II ′ of the ion implantation apparatus having a reflecting plate at a side in FIG. 1.

6 is a flowchart illustrating a method of performing ion implantation using the ion implantation apparatus of FIG. 1.

<Explanation of symbols for the main parts of the drawings>

10: ion implantation device 16: loading chamber

18: ion implantation chamber 31: body

33a, 33b, 51: heat generating part 35: shutter

41, 53, 55: reflector 43: gas inlet

The present invention relates to an ion implantation apparatus, and more particularly, to an ion implantation apparatus and an ion implantation method capable of simultaneously performing ion implantation and annealing.

The present invention relates to a liquid crystal display device manufactured using an ion implantation device and a method of manufacturing the same.

Liquid crystal displays are recently being spotlighted in place of heavy and bulky cathode ray tubes (CRTs). In the liquid crystal display device, a thin film transistor (TFT) is formed as a switching element in each pixel area arranged in a matrix form.

The liquid crystal display device usually includes a liquid crystal panel, a drive drive IC and a circuit board for driving the liquid crystal panel. The liquid crystal panel includes an array substrate including a TFT array and a pixel electrode, a color filter substrate including a color filter, and a liquid crystal layer filled between the array substrate and the color filter substrate.

Conventionally, amorphous silicon is mainly used as an active layer (semiconductor layer) of a thin film transistor (TFT). Amorphous silicon has a low electron mobility, making it difficult to manufacture a large screen liquid crystal panel. In addition, since the polysilicon is mainly used as the active layer in the drive drive IC, the liquid crystal panel and the drive drive IC have to be separately manufactured and then connected to each other, which leads to a complicated manufacturing process and disadvantages in terms of integration.

Recently, studies on using polysilicon as an active layer of a thin film transistor have been actively conducted.

Polysilicon is not only suitable for the manufacture of large screen liquid crystal panels because it has hundreds of times more electron mobility than amorphous silicon, and it is possible to simultaneously form thin film transistors and driving drive ICs on the same substrate. There is a big advantage in that.

A method of forming a polysilicon layer on a substrate includes a method of directly depositing polysilicon and first depositing amorphous silicon and then crystallizing it into polysilicon.

Although the former method is simple, there is a limit to precisely control the growth of crystal grains, so there is a disadvantage in that the thin film characteristics are not excellent.

The latter method includes solid phase crystallization (SPC), which crystallizes amorphous silicon using a furnace heating method in a furnace, and instantaneously irradiates an excimer laser to heat the amorphous silicon to about 1400 degrees. Eximer laser annealing (ELA method), and metal induced crystallization (Metal Induced Crystallization) that induces crystallization by using a metal selectively deposited on an amorphous silicon layer as a seed.

Among them, the ELA method which has high crystallization speed and precise control as well as excellent crystallinity is widely used.

The ELA method forms amorphous silicon using an ion implantation apparatus on a substrate, and then forms polysilicon by irradiating a laser using such amorphous silicon in an excimer laser apparatus.

In such a case, since amorphous silicon contains hydrogen above a desired reference value, the hydrogen damages the film quality of the silicon, and thus a process of lowering the hydrogen to a desired reference value using an annealing device is essential.

Conventionally, since the ion implantation apparatus and the annealing apparatus are provided separately, a problem arises that the manufacturing process time is increased and the manufacturing process is complicated.

In addition, in the related art, the occupied area of the process apparatus for performing the ion implantation process and the annealing process is increased, and the cost of the process apparatus is increased.

An object of the present invention is to provide an ion implantation apparatus, an ion implantation method, a liquid crystal display device and a method of manufacturing the same that can reduce the manufacturing process time and simplify the manufacturing process by simultaneously performing an ion implantation process and an annealing process in a single process unit. There is this.

Another object of the present invention is to perform an ion implantation process and an annealing process in a single process unit at the same time, the ion implantation apparatus, ion implantation method, liquid crystal display device and its manufacturing which can reduce the occupied area of the process apparatus and the cost of the process apparatus In providing a method.

An ion implantation apparatus of the present invention for achieving the above object, the loading chamber; And an ion implantation chamber connected to the loading chamber to perform an ion implantation process on a substrate. In particular, the loading chamber performs an annealing process on the ion implanted substrate.

A method of manufacturing a liquid crystal display device using the ion implantation apparatus, the method comprising: forming amorphous silicon on a substrate by performing an ion implantation process; And annealing the substrate including the amorphous silicon to a predetermined temperature.

In the ion implantation apparatus, an ion implantation method includes: transferring a substrate to the loading chamber; Transferring the substrate to the ion implantation chamber; Performing an ion implantation process on the substrate in the ion implantation chamber to form amorphous silicon; Transferring the substrate on which the amorphous silicon is formed to the loading chamber; Annealing the substrate on which the amorphous silicon is formed at a predetermined temperature in the loading chamber.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view schematically illustrating an ion implantation apparatus according to the present invention, FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1, and FIG. 3 is a plan view illustrating the ion implantation apparatus of FIG. 1. 4 is a bottom view of the ion implantation apparatus of FIG. 1.

Referring to FIG. 1, the ion implantation apparatus 10 of the present invention includes a loading chamber 16 and an ion implantation chamber 20 connected to the loading chamber 16. The ion implantation apparatus 10 may further include a robot 14 for loading in / out a substrate into the loading chamber 16.

Multiple substrates may be loaded in the cassette 12. The cassette 12 may be moved to a desired position by a moving means for movement attached to the bottom surface thereof.

The cassette 12 is moved in place from the loading chamber 16 for processing in the ion implantation apparatus 10.

The robot 14 has a robot arm having a diffraction joint capable of picking up and transporting a substrate. A substrate loaded on the cassette 12 by the robot arm may be transferred to the loading chamber 16, and a substrate on which a predetermined process is completed may be loaded onto the cassette 12 from the loading chamber 16.

A gate valve 18 is provided between the loading chamber 16 and the ion implantation chamber 20. The gate valve 18 opens only when the substrate is transferred from the loading chamber 16 to the ion implantation chamber 20 or from the ion implantation chamber 20 to the loading chamber 16, otherwise closed. do. By closing the gate valve 18, desired process conditions may be obtained in each of the loading chamber 16 and the ion implantation chamber 20.

The loading chamber 16 is an intermediate medium for transferring the substrate to the ion implantation chamber 20. The substrate is briefly waited in the loading chamber 16 before being transferred to the ion implantation chamber 20. In addition, the substrate implanted with ion in the ion implantation chamber 20 is temporarily waited in the loading chamber 16 before being loaded into the cassette 12. The loading chamber 16 is a member for giving an adjustment to the vacuum pressure difference as the external vacuum pressure and the vacuum pressure of the ion implantation chamber 20 have a remarkable difference.

Therefore, after the substrate loaded in the cassette 12 is loaded in to the loading chamber 16, it is adjusted to a predetermined vacuum pressure, and then to the ion implantation chamber 20 via the gate valve 18. Transferred. In addition, the substrate implanted with ion in the ion implantation chamber 20 is transferred to the loading chamber 16 via the gate valve 18, and then regulated by an external vacuum pressure, and then into the cassette 12. Can be loaded.

The loading chamber 16 has a function of annealing the substrate as well as loading and out of the substrate.

As shown in FIGS. 2 and 3, a plurality of substrate plates 37 are provided in the loading chamber 16 to be spaced apart from each other and to seat the substrate 39. In FIG. 2, four substrate plates 37 are provided, but more than two substrate plates 37 may be provided. One substrate 39 may be seated on each substrate plate 37. The dozens of substrate plates 37 may be moved up and down by separate vertical movement means. For example, the first substrate transferred from the cassette 12 is seated on the bottommost substrate plate 37, the second substrate is seated on the substrate plate 37 thereon, and the third substrate is the substrate above it. Seated on plate 37, a fourth substrate may be seated on substrate plate 37 thereon. Each time the substrate is seated on the substrate plate 37, the plurality of substrate plates 37 may be moved downward by a predetermined interval by the vertical movement means.

In FIG. 3, a plurality of first heat generating units 33a are disposed on the upper inner surface of the body 31 along the advancing direction of the substrate 39.

The shutter 35 is spaced apart from the first heat generator 33a in a downward direction by a predetermined interval. The shutter 35 has a slit shape including an open area and a blocking area at predetermined intervals. Therefore, heat supplied from the first heat generating unit 33a may be transmitted through the open area, and the heat may be blocked by the blocking area. The shutter 35 may be reciprocated along a moving direction of the substrate 39 by a moving means such as a motor. The shutter 35 is a member for adjusting the heat supplied from the first heat generator 33a. Therefore, the heat supplied from the first heat generating unit 33a may be prevented from being suddenly transferred into the loading chamber 16.

In FIG. 2, a plurality of second heat generating units 33b are disposed in the up-down direction on the side inner surface of the body 31. If necessary, the shutter 35 may be disposed at a position spaced apart from the second heat generator 33b by a predetermined interval.

The first and second heat generating units 33a and 33b may be heaters made of a heat transfer material. The heat transfer material may be a molybdenum (Mo) material. The heater may generate heat by a predetermined current. In this case, the second heat generator 33b is connected to the first heat generator 33a. The first heat generating unit 33a and the second heat generating unit 33b may be integrally formed or may be separately formed and fastened through an assembly process.

The first and second heat generators 33a and 33b may be infrared lamps. The infrared lamp generates an infrared wavelength having a strong radiation intensity by a predetermined voltage, so that the infrared wavelength heats the target object. The infrared lamp may be made using a halogen, a quartz tube or a coil.

The first heat generating unit 33a may be the heater, and the second heat generating unit 33b may be the infrared lamp.

The first heat generating unit 33a may be the infrared lamp, and the second heat generating unit 33b may be the heater.

The reflecting plate 41 is disposed in the entire area of the lower inner surface of the body 31. The reflector 41 may be made of gold (Au) material. The reflective plate 41 may be formed as a coating on the lower inner surface of the body 31, or may be attached to a pre-processed film. The reflecting plate 41 reflects heat generated by the first and second heat generating units 33a and 33b to uniformly transfer heat to all regions of the interior space of the loading chamber 16. By arranging the reflective plate 41 on the lower inner surface of the body 31, it is not necessary to form the first and second heat generating units 33a and 33b on the lower inner surface of the body 31, thereby reducing manufacturing costs. can do.

As shown in FIG. 4, a plurality of gas inlets 43 for injecting nitrogen gas through the body 31 are disposed below the body 31. The foreign matter may be prevented from adhering to the substrate by the high temperature during the annealing process by the nitrogen gas injected from the gas inlet 43. That is, strong nitrogen gas is injected from the gas injection port 43. This strong nitrogen gas flows between the substrates located in the vertical direction through the internal space of the loading chamber 16, thereby preventing the foreign matter from adhering to the substrate.

The gas injection port 43 may be connected to an external gas supply pipe (not shown) so that nitrogen gas may be supplied by the gas supply pipe.

FIG. 5 is a cross-sectional view taken along the line II ′ of the ion implantation apparatus having a reflective plate at a side in FIG. 1.

Among the components of FIG. 5, the same components as described above have the same functions and are assigned the same reference numerals. In addition, the description of the same components will be omitted, it will be easily understood from the previous description.

As shown in FIG. 5, a plurality of heat generators 51 are disposed on the upper inner surface of the body 31 along the advancing direction of the substrate 39.

The heat generator 51 may be a heater made of a heat transfer material. The heat transfer material may be molybdenum (Mo). The heater may generate heat by a predetermined current.

The heat generator 51 may be an infrared lamp. The infrared lamp generates an infrared wavelength having a strong radiation intensity by a predetermined voltage, so that the infrared wavelength heats the target object. The infrared lamp may be made using a halogen, a quartz tube or a coil.

The first reflecting plate 53 is disposed in the entire region of the side inner surface of the body 31, and the second reflecting plate 55 is disposed in the entire region of the lower inner surface of the body 31. The first and second reflecting plates 53 and 55 may be made of gold (Au). The first and second reflecting plates 53 and 55 may be formed of a coating or may be attached to a pre-processed film. The first and second reflector plates 53 and 55 reflect heat generated by the heat generator 51 to uniformly transfer heat to all regions of the interior space of the loading chamber 16. By disposing the first and second reflecting plates 53 and 55 on the side inner surface and the lower inner surface of the body 31, the heat generating part 51 is not formed on the inner side surface and the lower inner surface of the body 31. Therefore, the manufacturing cost can be reduced.

Therefore, an annealing process may be performed on the substrate, that is, the substrate implanted with ion in the ion implantation chamber 20. That is, the internal temperature of the loading chamber 16 is increased to several hundred degrees by the heat supplied from the heat generator 51, and the hydrogen content is lowered to a desired reference value by dehydrogenation by the elevated temperature. have.

Meanwhile, the loading chamber 16 may perform preheating on the substrate transferred from the cassette 12 to the loading chamber 16 by the robot 14. That is, the substrate may be preheated by adjusting the heat generator to maintain a relatively low temperature, for example, about 100 degrees, of the internal space of the loading chamber 16. When the substrate is preheated as described above, the substrate is preheated when the preheated substrate is subjected to the ion implantation process in the ion implantation chamber 20, so that the temperature of the substrate can be easily raised to a desired reference value. Therefore, the process time for ion implantation can be greatly shortened.

6 is a flowchart illustrating a method of performing ion implantation using the ion implantation apparatus of FIG. 1. Predetermined amorphous silicon is formed on the substrate by the ion implantation method, and the amorphous silicon may be formed of polycrystalline silicon by a post-treatment process.

1 to 4 and 6, the substrate loaded in the cassette 12 is transferred to the loading chamber 16 using the robot 14 (S 101). Four substrates may be mounted in the loading chamber 16. Thus, the robot 14 sequentially transfers four substrates from the cassette 12 to the loading chamber 16.

The four substrates are preheated by the heat supplied from the first and second heat generating units 33a and 33b in the loading chamber 16 (S 103). The temperature caused by the heat supplied from the first and second heat generating units 33a and 33b is at least lower than the process temperature of the ion implantation chamber 20. The preheating temperature may range from approximately 100 degrees to 200 degrees.

The loading chamber 16 sequentially transfers two substrates to the ion implantation chamber 20 (S 105). The ion implantation chamber 20 stands up each of the two substrates and then reciprocates along the substrate traveling direction.

An ion source for supplying ions is provided at the side of the ion implantation chamber 20. The two substrates should be arranged so as not to overlap each other with respect to the ion source. The ions supplied from the ion source are accelerated and injected into each of the substrates (S 107). Accordingly, amorphous silicon may be formed on each of the substrates.

The two substrates on which the amorphous silicon is formed are sequentially transferred to the loading chamber 16 (S 109).

Thereafter, the remaining two substrates are sequentially transferred to the ion implantation chamber 20, and amorphous silicon is formed on each substrate by the same ion implantation process as before.

The loading chamber 16 performs an annealing process by heat supplied from the first and second heat generating units 33a and 33b to remove hydrogen in the amorphous silicon (S 111). The annealing temperature may range from approximately 300 degrees to 500 degrees.

Nitrogen gas is strongly injected through the gas injection hole 43 during the annealing process. Accordingly, foreign matter existing in the interior space of the loading chamber 16 may be blocked from being attached to the substrate by the nitrogen gas.

Four substrates are sequentially loaded out from the loading chamber 16 by the robot 14 and loaded into the cassette 12 (S 113).

Thereafter, polycrystalline silicon is formed from the amorphous silicon by a post-treatment process, and the polycrystalline silicon is patterned to form a semiconductor layer, and a gate electrode and a source / drain electrode are formed on the semiconductor layer to form a thin film using polycrystalline silicon. Transistors can be manufactured. The thin film transistor may be used as a switching element for controlling each pixel area of the liquid crystal display.

Therefore, the present invention can simultaneously perform the ion implantation process and the annealing process using a single ion implantation device.

As described above, according to the present invention, by simultaneously performing the ion implantation process and the annealing process using a single ion implantation device, it is possible to reduce the manufacturing process time and simplify the manufacturing process.

According to the present invention, by simultaneously performing the ion implantation process and the annealing process using a single ion implantation device, it is possible to reduce the occupied area of the process equipment and the cost of the process equipment.

According to the present invention, by preheating the substrate in the loading chamber and performing the ion implantation process in the ion implantation chamber more quickly, the temperature of the substrate can be easily increased to a desired reference value, thereby greatly reducing the process time for ion implantation. Can be.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

Claims (41)

Loading chamber; And An ion implantation chamber connected to the loading chamber to perform an ion implantation process on at least one substrate; The loading chamber performs an annealing process on the ion implanted substrate, The loading chamber is A plurality of heat generating parts disposed on the upper inner surface of the body; And And a shutter disposed to be spaced apart from the plurality of heat generating parts in a downward direction. The method of claim 1, wherein the loading chamber, And a plurality of further heat generating units disposed on the side inner surface of the body. The method of claim 2, wherein the loading chamber, Further comprising a reflector disposed on the lower inner surface of the body, And the reflecting plate reflects heat supplied from the heat generating portion and the another heat generating portion. delete delete delete The method of claim 3, wherein the loading chamber, Further comprising a plurality of gas inlet disposed on the lower inner surface of the body, Each gas injection port is an ion implantation device, characterized in that for injecting gas into the loading chamber. The ion implantation apparatus of claim 7, wherein each of the gas injection holes is disposed through the reflection plate. delete The ion implantation apparatus of claim 2, wherein the first and second heat generating units are one of a heater and an infrared lamp made of a heat transfer material. delete delete delete delete delete delete delete delete delete The ion implantation apparatus of claim 1, wherein the shutter reciprocates along the advancing direction of the substrate. The method of claim 1, wherein the loading chamber, A first reflector disposed on a side inner surface of the body; And a second reflector disposed on the lower inner surface of the body, wherein the first and second reflectors reflect heat supplied from the heat generator. delete delete delete The ion implantation apparatus of claim 1, wherein the heat generator is one of a heater and an infrared lamp made of a heat transfer material. delete delete delete delete delete The ion implantation apparatus of claim 1, further comprising a gate valve disposed between the loading chamber and the ion implantation chamber. The ion implantation apparatus according to any one of claims 1 to 3, 7 to 8, 10, 20 to 21, 25 and 31, Transferring a substrate to the loading chamber; Transferring the substrate to the ion implantation chamber; Performing an ion implantation process on the substrate in the ion implantation chamber to form amorphous silicon; Transferring the substrate on which the amorphous silicon is formed to the loading chamber; Annealing the substrate on which the amorphous silicon is formed at a predetermined temperature in the loading chamber. 33. The method of claim 32, wherein the annealing temperature ranges from 300 degrees to 500 degrees. The method of claim 32, wherein before transferring the substrate to the ion implantation chamber, Preheating the substrate to a predetermined temperature in the loading chamber. 35. The ion implantation method of claim 34, wherein the preheating temperature ranges from 100 degrees to 200 degrees. 35. The method of claim 34, wherein the preheating temperature is at least lower than the process temperature of the ion implantation chamber. 33. The method of claim 32, wherein in the annealing, a predetermined gas is injected into the substrate on which the amorphous silicon is formed. delete A liquid crystal display manufactured by the ion implantation apparatus according to any one of claims 1 to 3, 7 to 8, 10, 20 to 21, 25 and 31. . A liquid crystal display device is manufactured by the ion implantation device according to any one of claims 1 to 3, 7 to 8, 10, 20 to 21, 25 and 31. In the way, Performing an ion implantation process to form amorphous silicon on the substrate; And annealing the substrate including the amorphous silicon at a predetermined temperature. 41. The method of claim 40, wherein the annealing temperature is in a range of 300 degrees to 500 degrees.

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