KR102016567B1 - Flat panel display including thin film transistor substrate having color filter layer and manufacturing the same - Google Patents

Abstract

The present invention relates to a borderless flat panel display device having a thin film transistor substrate including a color filter layer and a method of manufacturing the same. According to an aspect of the present invention, there is provided a flat panel display including: a lower substrate divided into a display area in which pixel areas are defined in a matrix arrangement, and a non-display area disposed around the display area; A switching element disposed in the pixel region and a color filter formed in the pixel region; A driving element formed in the non-display area; And a lower panel formed in the non-display area and having a light shielding protection layer covering the driving element. According to the present invention, the non-display area and the display area are not visually distinguished, thereby maintaining the quality of the borderless flat panel display panel.

Description

A flat panel display device having a thin film transistor substrate including a color filter layer and a method of manufacturing the same {FAT PANEL DISPLAY INCLUDING THIN FILM TRANSISTOR SUBSTRATE HAVING COLOR FILTER LAYER AND MANUFACTURING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a borderless flat panel display including a thin film transistor substrate including a color filter layer, and a manufacturing method thereof. In particular, the present invention relates to a flat panel display and a method for manufacturing the same, in which a color filter layer is formed on a thin film transistor substrate to minimize borderline difference between the display area and the non-display area, thereby implementing borderlessness.

The liquid crystal display displays an image by adjusting the light transmittance of the liquid crystal using an electric field. Such liquid crystal displays are roughly classified into a vertical electric field type and a horizontal electric field type according to the direction of the electric field for driving the liquid crystal.

In the vertical field type liquid crystal display, the common electrode formed on the upper substrate and the pixel electrode formed on the lower substrate face each other to drive the liquid crystal of TN (Twisted Nematic) mode by a vertical electric field formed therebetween. The vertical field type liquid crystal display device has a large aperture ratio, but has a narrow viewing angle of about 90 degrees.

The horizontal field type liquid crystal display drives the liquid crystal in In Plane Switching (IPS) mode by a horizontal electric field between the pixel electrode and the common electrode disposed side by side on the lower substrate. Such a horizontal field type liquid crystal display has a wide viewing angle of about 170 degrees. On the other hand, the horizontal field type liquid crystal display device has a disadvantage that the aperture ratio is lower than that of the vertical field type liquid crystal display device.

Currently, most liquid crystal displays have a structure in which a thin film transistor substrate in which thin film transistors form a matrix array, and a color filter substrate in which a color filter is formed are bonded to each other, and a liquid crystal layer is interposed therebetween. The pixel region formed on the thin film transistor substrate and the pixel region formed on the color filter substrate must be bonded to each other completely. A color filter layer may be formed on the thin film transistor substrate in order to reduce an error in the bonding alignment process.

1 is a cross-sectional view illustrating a structure of a horizontal field type liquid crystal display device in which a color filter layer according to the prior art is formed on a thin film transistor substrate.

Referring to FIG. 1, a horizontal field type liquid crystal display having a color filter layer formed on a thin film transistor substrate according to the related art includes a lower panel LP in which pixel regions to which a thin film transistor and a color filter are assigned are formed in a matrix array, and the pixel region. And an upper panel UP having black column spacers disposed to correspond to each other, and a liquid crystal layer LC interposed between the lower panel and the upper panel.

The lower panel LP includes a lower substrate SL made of a material such as transparent glass and display elements formed thereon. The lower substrate SL is divided into a display area DA that occupies the center of the substrate and displays image data and a non-display area NA that surrounds the display area DA. In the display area DA, pixel areas are defined in a matrix manner. Each pixel area is assigned a thin film transistor T, a pixel electrode PXL connected to the thin film transistor T, and a color filter CF for implementing color.

In more detail, the thin film transistor T is formed at one edge of the pixel area defined in a matrix manner on the lower substrate SL. A first passivation film PAC is applied thereon to protect the thin film transistor T. The color filter CF is disposed on the first passivation layer PAC to occupy most of the pixel area. In the color filter CF, the red color filter CFR, the green color filter CFG, and the blue color filter CFB are alternately disposed in each of the neighboring pixel areas.

The second passivation layer PAS is coated on the color filters CF. The pixel electrode PXL connected to the thin film transistor T is formed in the pixel area on the second passivation layer PAS. In the case of the horizontal electric field method, the pixel electrode PXL has a comb structure in which a plurality of line segments are arranged in parallel at a predetermined interval. The common electrode COM is alternately disposed with the pixel electrode PXL while having a comb structure in which a plurality of line segments are arranged in parallel at a predetermined interval in the pixel area.

Meanwhile, the upper panel UP includes an upper substrate SU made of a material such as transparent glass. Like the lower substrate SL, the display area DA and the non-display area NA are divided on one surface of the upper substrate SU. Black column spacers BCS are formed in the entire non-display area NA. In addition, the black column spacer BCS may be formed at the boundary between the pixel areas defined in the lower substrate SL in the display area DA. In particular, it is preferable to form so as to be arranged between the color filters (CF).

In the non-display area NA of the lower panel LP, a driving element GIP for driving the display elements formed in the display area DA may be formed. The driving device GIP includes a thin film transistor. In order to protect the driving device GIP, the black column spacer BCS may be formed in the entire non-display area NA of the upper panel UP.

Thereafter, the liquid crystal layer LC is interposed therebetween, and the surface on which the black column spacer BCS of the upper panel UP is formed and the surface on which the display elements of the lower panel LP are formed to face each other are bonded to each other. Is completed. The black column spacer BCS performs a spacer function of maintaining a constant bonding gap between the upper substrate SU and the lower substrate SL, and simultaneously performs a black matrix function between the color filters CF.

When the color filter CF is formed on the lower substrate SL together with the thin film transistor T as described above, since the color filter CF is formed within the pixel region defined in the lower substrate SL, the color filter There is an advantage that the CF and the pixel region are exactly matched. In addition, since only the black column spacer BCS needs to be formed in the upper panel UP, the manufacturing process of the upper panel UP is minimized.

On the other hand, when the light flowing from the outside of the flat panel display is reflected, the edge of the display panel, or border area, is called a border area due to the difference in reflectance between the display area DA and the non-display area NA. Problems that stand out occur. More specifically, in the display area DA, external light is reflected by the pixel electrode PXL and the common electrode COM formed on the upper layer of the color filter CF, while in the non-display area NA, External light is hardly reflected by the black column spacer BCS. In particular, when a metal such as copper (Cu) is used to lower the electrical resistance of the pixel electrode PXL, the reflectance of the display area DA is about 13.4% and may appear slightly yellow due to copper. However, in the non-display area NA, the light reflectance is close to 0%. Therefore, since the non-display area NA is more prominently black than the display area DA, it becomes a obstacle to implementing a display device (aka borderless) that is invisible without a border.

Disclosure of Invention An object of the present invention is to overcome the problems occurring in the prior art, and includes a flat panel having a thin film transistor substrate including a color filter layer whose edges do not appear in the flat panel display device formed with the thin film transistor. A display device and a method of manufacturing the same are provided. Another object of the present invention is to provide a flat panel display device having a thin film transistor substrate including a color filter having a difference in light reflectance between a display area and a non-display area within 5%, and a method of manufacturing the same.

In order to achieve the object of the present invention, a flat panel display device according to the present invention includes a lower substrate partitioned into a display area in which the pixel area is defined in a matrix arrangement, and a non-display area disposed around the display area; A switching element disposed in the pixel region and a color filter formed in the pixel region; A driving element formed in the non-display area; And a lower panel formed in the non-display area and having a light shielding protection layer covering the driving element.

An upper panel including an upper substrate partitioned to correspond to the display area and the non-display area of the lower substrate, and a transparent column spacer disposed on the non-display area on one side of the upper substrate; And a liquid crystal layer interposed between the lower panel and the upper panel.

The light shielding protection layer may include the color filter.

The color filter comprises any one selected from a red color filter, a blue color filter and a green color filter; The light blocking protective layer is formed by stacking at least two color filters selected from among the red color filter, the blue color filter, and the green color filter.

A first passivation layer covering the switching element and the driving element and formed under the color filter and the light shielding protection layer; A second passivation layer covering the color filter, the light blocking protection layer, and the switching element; And a pixel electrode formed on the second passivation layer and connected to the switching element.

In addition, a method of manufacturing a flat panel display according to the present invention may include: dividing a lower substrate into a display area in which pixel areas are to be arranged in a matrix arrangement and a non-display area to be arranged around the display area; Forming a switching device in the pixel area and a driving device in the non-display area; Forming a light blocking protection layer covering the color filter in the pixel area and the driving element in the non-display area; And forming a lower panel in the pixel region, the method including forming a pixel electrode overlapping the color filter.

Partitioning an upper substrate to correspond to the display area and the non-display area of the lower substrate; And forming a transparent column spacer in the non-display area of the upper substrate; And bonding the upper panel and the lower panel with the liquid crystal layer interposed therebetween.

The forming of the light shielding protection layer may be formed of the color filter.

The color filter is configured to place any one selected from a red color filter, a blue color filter, and a green color filter in the pixel area; The light blocking protective layer is formed by stacking at least two color filters selected from the red color filter, the blue color filter, and the green color filter.

After forming the switching element and the driving element, forming a first passivation layer covering the switching element and the driving element and disposed under the color filter and the light shielding protection layer; Forming a second passivation layer covering the color filter, the light blocking protection layer, the switching element, and the driving element; And forming a pixel electrode on the second passivation layer, the pixel electrode overlapping the color filter and connected to the switching element.

A flat panel display device having a thin film transistor substrate including a color filter according to the present invention includes a color filter layer laminated at least two or more layers to protect a driving element formed in a non-display area. Therefore, the difference between the external light reflectance in the display area and the non-display area can be reduced to within 5%. As a result, the non-display area and the display area are not visually distinguished, thereby maintaining the quality of the borderless flat panel display panel. In addition, even when the spacer is used as a transparent material, the driving elements can be sufficiently protected from external light. In addition, no additional process is required to protect the non-display area, and since only the pattern used for forming the color filter needs to be changed, there is no increase in manufacturing cost or complexity of the process.

1 is a cross-sectional view showing the structure of a horizontal field type liquid crystal display device in which a color filter layer according to the prior art is formed on a thin film transistor substrate.
2 is a cross-sectional view showing the structure of a horizontal field type liquid crystal display device in which a color filter layer according to the present invention is formed on a thin film transistor substrate.
3A to 3J are cross-sectional views illustrating a process of manufacturing a horizontal field type liquid crystal display device having a color filter layer formed on a thin film transistor substrate according to an exemplary embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, FIGS. 2 and 3A to 3J. Like numbers refer to like elements throughout. In the following description, when it is determined that the detailed description of the known technology or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

2 is a cross-sectional view illustrating a structure of a horizontal field type liquid crystal display device in which a color filter layer according to the present invention is formed on a thin film transistor substrate.

Referring to FIG. 2, a horizontal field type liquid crystal display device having a color filter layer formed on a thin film transistor substrate according to an exemplary embodiment of the present invention includes a lower panel LP in which pixel regions to which a thin film transistor and a color filter are allocated are formed in a matrix array, and the pixel region And an upper panel UP having transparent column spacers disposed to correspond to each other, and a liquid crystal layer LC interposed between the lower panel and the upper panel.

The lower panel LP includes a lower substrate SL made of a material such as transparent glass and display elements formed thereon. The lower substrate SL is divided into a display area DA that occupies the center of the substrate and displays image data and a non-display area NA that surrounds the display area DA. The non-display area NA occupies at least one side of the display area DA. For example, one side of the display area DA may be occupied, two neighboring sides, or four sides completely surrounding the display area DA. In the display area DA, pixel areas are defined in a matrix manner. Each pixel area is assigned a thin film transistor T, a pixel electrode PXL connected to the thin film transistor T, and a color filter CF for realizing color.

In more detail, the pixel region having the matrix array is defined by the gate wiring running in the horizontal direction and the data wiring running in the vertical direction on the lower substrate SL. The thin film transistor T is formed at one corner of the pixel area. The thin film transistor T is disposed on one side of the semiconductor channel layer A and the semiconductor channel layer A which overlap the gate electrode G with the gate electrode G branched from the gate wiring and the gate insulating layer GI interposed therebetween. And a drain electrode D contacting and contacting the source electrode S branched from the data line and the other side of the semiconductor channel layer A and spaced apart from the source electrode S by a predetermined distance. The first passivation layer PAC is coated on the thin film transistor T to protect it. On the first passivation film PAC, the color filter CF, which occupies most of the pixel region, is formed. In the color filter CF, the red color filter CFR, the green color filter CFG, and the blue color filter CFB are alternately disposed in each of the neighboring pixel areas.

The second passivation layer PAS is coated on the color filters CF. In the pixel area on the second passivation layer PAS, a pixel electrode PXL is formed to pass through the first passivation layer PAC and the second passivation layer PAS and be connected to the thin film transistor T. In the case of the horizontal electric field method, the pixel electrode PXL has a comb structure in which a plurality of line segments are arranged in parallel at a predetermined interval. The common electrode COM is alternately disposed with the pixel electrode PXL while having a comb structure in which a plurality of line segments are arranged in parallel at a predetermined interval in the pixel area.

Meanwhile, the upper panel UP includes an upper substrate SU made of a material such as transparent glass. Like the lower substrate SL, the upper substrate SU is divided into a display area DA and a non-display area NA. On the surface of one side of the substrate SU, a transparent column spacer CS is formed in the entire non-display area NA. In the display area DA, the transparent column spacer CS may be formed at a necessary portion among the boundary portions between the pixel areas defined in the lower substrate SL. In particular, the gate line or the data line between the color filters CF may be formed so as to be disposed in the non-opening region.

In the non-display area NA of the lower panel LP, a driving element GIP for driving the display elements formed in the display area DA may be formed. The driving element GIP includes a thin film transistor. That is, the thin film transistor T is formed in the display area DA of the lower panel LP to be used as a switching element for driving the on-off state of the liquid crystal layer LC, and the non-display area NA is switched. The thin film transistor T for use as a driving element for driving the element is formed. In particular, in order to protect the thin film transistor for the driving element GIP from the light flowing from the outside, it is preferable to form the color filter CF of at least two layers so as to cover the entire non-display area NA of the lower panel LP. desirable. For example, when the process of forming the color filters CF is performed in the order of the red color filter CFR, the blue color filter CFB, and the green color filter CFG, It is preferable to form the blue color filter CFB sequentially.

Thereafter, the liquid crystal layer LC is interposed, and the surface on which the transparent column spacer CS of the upper panel UP is formed and the surface on which the display elements of the lower panel LP are formed to face each other are bonded to each other. Is completed. The transparent column spacer CS performs a spacer function to maintain a constant bonding gap between the upper substrate SU and the lower substrate SL.

When the color filter CF is formed on the lower substrate SL together with the thin film transistor T as described above, since the color filter CF is formed within the pixel region defined in the lower substrate SL, the color filter (CF) and the pixel region coincide exactly. In addition, the light shielding layer PL having two color filters CF stacked on the driving element GIP formed in the non-display area NA may be effectively protected from light penetrating from the outside.

In addition, when light introduced from the outside of the completed flat panel display is reflected, the difference in reflectance between the display area DA and the non-display area NA is virtually difficult to visually distinguish within 5%. Therefore, the border area, which is the edge of the display panel, does not appear visually outstanding. More specifically, in the display area DA, about 13.4% of the amount (100%) of the light incident by the pixel electrode PXL and the common electrode COM formed on the upper layer of the color filter CF is increased. Reflected. Meanwhile, in the non-display area NA, about 10% of the amount of light incident by the light shielding layer PL including the stacked red color filter CFR and the blue color filter CFB is about 100%. Is reflected. Therefore, the difference in light reflectance between the display area DA and the non-display area NA is almost within 5%. As a result, there is no visual defect in which the non-display area NA, which has occurred in the prior art, appears to be unusually black around the display area DA.

3A to 3J, a preferred embodiment of a method of manufacturing a horizontal field type liquid crystal display device in which a color filter layer according to the present invention is formed on a thin film transistor substrate will be described. 3A to 3J are cross-sectional views illustrating a process of manufacturing a horizontal field type liquid crystal display device having a color filter layer formed on a thin film transistor substrate according to an exemplary embodiment of the present invention.

The transparent lower substrate SL for the lower panel LP is prepared. The lower substrate SL is divided into the display area DA and the non-display area NA. A gate metal material is coated on the substrate SL and patterned with a first mask to form a gate material. The gate material includes a gate line running in the horizontal direction of the substrate SL and a gate electrode G branching from the gate line. The display element gate electrode G for displaying image data may be formed in the display area DA, and the driving electrode gate electrode G may be formed in the non-display area DA. (FIG. 3A)

Silicon nitride (SiNx) or silicon oxide (SiOx) is coated on the entire surface of the substrate SL on which the gate electrode G is formed to form a gate insulating film GI. (FIG. 3B)

The semiconductor material is entirely coated on the gate insulating layer GI, and is patterned with a second mask to form a semiconductor channel layer A overlapping the gate electrode G. (FIG. 3C)

The thin film transistor T is completed by applying a source-drain electrode material to the entire surface of the substrate SL on which the semiconductor channel layer A is formed, and patterning the same with a third mask to form the source-drain material. The source-drain material may include a data line running in the longitudinal direction of the substrate SL, a source electrode S branching from the data line and contacting one side of the semiconductor channel layer A, and a predetermined distance from the source electrode S. A drain electrode D is spaced apart and in contact with the other side of the semiconductor channel layer A. The display element thin film transistor T for displaying image data may be formed in the display area DA, and the thin film transistor T for the driving element GIP may be formed in the non-display area DA. (FIG. 3D)

In some cases, after forming the gate electrode G, an insulating material, a semiconductor material and a source-drain electrode material are sequentially applied on the substrate SL, and the semiconductor material and the source-drain electrode material are applied with one mask. The thin film transistor T may be completed by patterning. In this case, the second mask and the third mask may be replaced with one mask.

The first passivation layer PAC is formed by coating an inorganic insulating material or an organic insulating material on the entire surface of the substrate SL on which the thin film transistor T is completed. (FIG. 3E)

On the first passivation film PAC, a red pigment is applied and patterned with a fourth mask to form a red color filter CFR. The red color filter CFR is selectively formed in the pixel area to display red color. In addition, the red color filter CFR may be formed on the entire non-display area NA.

Thereafter, a blue pigment is applied and patterned with a fifth mask to form a blue color filter CFB. The blue color filter CFB is selectively formed in the pixel area where blue is to be displayed. In addition, the blue color filter CFB may be formed on the red color filter CFR formed on the entire non-display area NA. As a result, the protective layer PL is formed to protect the thin film transistor T of the driving element GIP.

Finally, a green pigment is applied and patterned with a sixth mask to form a green color filter CFG. The green color filter CFG is selectively formed in the pixel area in which green is to be displayed. It is preferable that the green color filter CFG is not further formed in the non-display area NA. (Figure 3f)

If all of the red, blue, and green color filters are formed in the non-display area NA, the saturation is almost black due to the mixing of the three primary colors. In this case, since the light incident from the outside is hardly reflected, the non-display area NA may appear black. Accordingly, the protective layer PL formed in the non-display area NA may stack two color filters selected from a red color filter CFR, a blue color filter CFB, and a green color filter CFG. For example, a red color filter (CFR) and a blue color filter (CFB), or a blue color filter (CFB) and a green color filter (CFG), or a red color filter (CFR) and a green color filter (CFG) It can be formed by laminating. As a result of experimenting with various combinations in this embodiment, the best combination in terms of visibility was stacking a red color filter (CFR) and a blue color filter (CFB).

It may be considered that only one of three color filters is formed in the non-display area NA. In this case, external light penetrates the color filter to affect the characteristics of the thin film transistor T for the driving element GIP. Not likely to give.

The second passivation layer PAS is formed by coating an inorganic insulating material or an organic insulating material on the entire surface of the substrate SL on which the color filters CFR, CFB, and CFG are formed. A portion of the drain electrode D is exposed by simultaneously patterning the second passivation layer PAS and the second passivation layer PAC with the seventh mask. (Figure 3g)

A transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is coated on the second passivation layer PAS and patterned with an eighth mask to form the pixel electrode PXL in contact with the drain electrode D. . In the case of the horizontal electric field method, the common electrode COM facing the pixel electrode PXL is further formed. The pixel electrode PXL and the common electrode COM may further include copper nitride (CuNx) or molybdenum-titanium alloy (MoTi) to improve electrical resistance. Thus, the lower panel LP is completed. (FIG. 3H)

The transparent upper substrate SU for the upper panel UP is prepared. The upper substrate SU is divided into a display area DA and a non-display area NA. The column spacer CS is formed of a transparent organic material on one side of the upper substrate SU. The column spacer CS is to maintain a constant bonding space between the upper substrate SU and the lower substrate SL, and is preferably formed in the entire non-display area NA. In addition, in order to keep the bonding interval constant even in the center of the panel, it is preferable to further form the column spacer CS in the display area DA. At this time, it is preferable to form in the part in which the gate wiring or data wiring which is a non-opening part is arrange | positioned, or the part in which the thin film transistor T is arrange | positioned among the display area DA. (FIG. 3i)

The surface on which the column spacer CS is formed in the upper panel UP and the surface on which the thin film transistor T and the color filter CF are formed in the lower panel LP are bonded to each other. In particular, the liquid crystal layer LC is bonded between the upper panel UP and the lower panel LP. This completes the horizontal field type liquid crystal display device in which the color filter layer is formed on the thin film transistor substrate. (FIG. 3J)

According to the exemplary embodiment of the present invention, two color filters are stacked in the non-display area NA to protect the driving element GIP to form the light blocking protective layer PL. In particular, these stacked color filters do not require an additional process and are made together in the process of forming a color filter formed in the display area DA. Therefore, no additional process or cost is required.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention. Therefore, the present invention should not be limited to the details described in the detailed description but should be defined by the claims.

UP: upper panel LP: lower panel
SU: upper substrate SL: lower substrate
NA: non-display area DA: display area
GIP: drive element T: thin film transistor
G: gate electrode A: semiconductor channel layer
S: source electrode D: drain electrode
GI: gate insulating film PAC: first protective film
PAS: 2nd protective film PXL: pixel electrode
COM: Common electrode CF: color filter
CFR: Red Color Filter CFB: Blue Color Filter
CFG: green color filter BCS: black column spacer
CS: transparent column spacer LC: liquid crystal layer
PL: Shading protective layer

Claims (11)

A lower panel, an upper panel, and a liquid crystal layer interposed between the lower panel and the upper panel,
The lower panel,
A lower substrate partitioned into a display area in which pixel areas are defined in a matrix arrangement, and a non-display area disposed around the display area;
A switching element disposed in the pixel region and a color filter formed in the pixel region;
A driving element formed in the non-display area; And
A light blocking protection layer formed on the non-display area and covering the driving element;
The upper panel,
An upper substrate partitioned to correspond to the display area and the non-display area of the lower substrate; And
A transparent column spacer disposed on the non-display area on one side of the upper substrate,
The light shielding protective layer,
And a flat panel display interposed between the driving device and the transparent column spacer in the non-display area and overlapping the driving device and the transparent column spacer.
delete The method of claim 1,
The light blocking protective layer includes the color filter.
The method of claim 1,
The color filter comprises any one selected from a red color filter, a blue color filter and a green color filter;
And wherein the light blocking protective layer is formed by stacking at least two color filters selected from the red color filter, the blue color filter, and the green color filter.
The method of claim 1,
The lower panel,
A first passivation layer covering the switching element and the driving element and formed under the color filter and the light shielding protection layer;
A second passivation layer covering the color filter, the light blocking protection layer, and the switching element; And
And a pixel electrode formed on the second passivation layer and connected to the switching element.
Forming a lower panel;
Forming a top panel; And
Bonding the upper panel and the lower panel with a liquid crystal layer interposed therebetween,
Forming the lower panel,
Dividing the lower substrate into a display area in which pixel areas are to be arranged and a non-display area to be arranged around the display area;
Forming a switching device in the pixel area and a driving device in the non-display area;
Forming a light blocking protection layer covering the color filter in the pixel area and the driving element in the non-display area; And
Forming a pixel electrode overlapping the color filter in the pixel region,
Forming the upper panel,
Partitioning an upper substrate to correspond to the display area and the non-display area of the lower substrate; And
Forming a transparent column spacer in the non-display area of the upper substrate,
The light shielding protective layer,
In the non-display area, interposed between the driving element and the transparent column spacer and overlapping the driving element and the transparent column spacer.
delete The method of claim 6,
And forming the light shielding protection layer using the color filter.
The method of claim 6,
The color filter is configured to place any one selected from a red color filter, a blue color filter, and a green color filter in the pixel area;
And wherein the light shielding protection layer is formed by stacking at least two color filters selected from the red color filter, the blue color filter, and the green color filter.
The method of claim 6,
Forming the lower panel,
After forming the switching element and the driving element, forming a first passivation layer covering the switching element and the driving element and disposed under the color filter and the light shielding protection layer;
Forming a second passivation layer covering the color filter, the light blocking protection layer, the switching element, and the driving element; And
And forming a pixel electrode on the second passivation layer, the pixel electrode overlapping the color filter and connected to the switching element.

The method of claim 1,
The lower panel,
A pixel electrode connected to the switching element,
And a difference between the light reflectance by the pixel electrode in the display area and the light reflectance by the light shielding protection layer in the non-display area is set within 5%.

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