KR102014350B1 - A chemical vapor deposition chamber having a baffle structure - Google Patents

Abstract

According to an embodiment of the present invention for solving the problem, a chamber for chemical vapor deposition provided with a baffle structure of the present invention comprises: a chamber body having an inlet and an outlet; and at least one baffle structure provided to be detachably attached to a position adjacent to the inlet for expanding a flow path of a fluid flowing from the inlet.

Description

A chemical vapor deposition chamber having a baffle structure

The present invention relates to a chamber for chemical vapor deposition, in the deposition of the deposition object using a deposition fluid containing paraline, it is easier to the deposition target by expanding the flow region for the deposition fluid flowing in the chamber The present invention relates to a chamber for chemical vapor deposition having a baffle structure capable of shortening a deposition process time to improve productivity and at the same time improving a deposition quality for a chemical vapor deposition target.

As is generally known, a paraline coating method using a paraline monomer is a deposition method used when surface corrosion prevention, oxidation prevention, moisture proofing, and chemical resistance of a deposit are required.

Unlike the urethane, silicon, and epoxy coatings, which are general surface protection coatings using a immersion and spray method, the parylene coating method is a CVD (Chemical Vapor Deposition) method in which deposition is performed while granulating the parylene monomer in a vacuum state. Use

The above-mentioned paraline coating method is capable of micro-thickness coating compared to the general coating method, and excellent surface protection characteristics compared to the typical coating method, and since the paraline coating is a coating method by vacuum deposition, the reliability of the product In order to secure a uniform thickness regardless of the position of the product to be coated, it is mainly used when coating the parts of medical equipment or small electronic devices.

However, in order to proceed with the above-described paraline coating method, when the paraline coating is performed through a deposition process using a general chemical vapor deposition chamber which is currently mainly used, the deposition chamber 10 as shown in FIG. The phenomenon that the flow zone of the parylene monomer particles flowing in the c) is concentrated on the chamber inlet side.

In particular, when the parylene monomer particles are concentrated in a specific region, the coating film thickness of a specific portion of the deposition target may exhibit a significant difference from the coating film thickness of the other portions.

As described above, if the uniformity of the thickness of the coating film decreases slightly during the deposition process on the deposition target, there is a problem that the quality of the final produced part may be greatly reduced.

KR 10-0720125 B1 'Coating system'

The problem to be solved by the present invention was created in order to solve the above-mentioned problems, and in order to extend the particle flow path of the deposition fluid consisting of the parylene monomer particles flowing in the chemical vapor deposition chamber, By providing a baffle structure having a structure, the expanded fluid flow area can be secured so that the paraffinic monomer can be more uniformly applied to the deposition target, and the chemical having the baffle structure capable of producing a higher quality product is provided. It is an object to provide a vapor deposition chamber.

According to an embodiment of the present invention for solving the above problems, the chamber for chemical vapor deposition provided with the baffle structure of the present invention is to extend the flow path of the fluid flowing from the chamber body and the inlet and outlet formed in the inlet And at least one baffle structure provided to be detachable at a position adjacent to the inlet.

In more detail, the baffle structure is provided to have an extended surface extending upward and downward and left and right while maintaining a flat plate shape, the center of the baffle structure is the same as the center of the inlet or outlet of the chamber body. Characterized in that arranged on the line.

In more detail, the baffle structure further includes a first protrusion provided at one end of an extension surface extending upward and downward from a center of the baffle structure, and coupled to an inner wall of the chamber body. It features.

More specifically, the baffle structure is provided at one end of the extending surface extending toward the left and right from the center of the baffle structure, and further comprises a second protrusion provided to be coupled to the inner wall of the chamber body It is done.

More specifically, the chamber body is provided to be coupled to the end of the extension surface of the baffle structure, and further comprises a coupling portion provided to be coupled to each other by the extension surface and the magnetic force, the baffle structure and the coupling portion and It is characterized in that it is made of a metallic material to be removable.

In more detail, the coupling part includes a first support, a second support spaced apart from the first support by a predetermined distance, and a magnetic body formed on one surface of the first support and the second support. .

In more detail, the coupling part is formed at both ends or the bottom of the first support and the second support to prevent the baffle structure from being separated from the chamber body by an external force applied in up, down, left and right directions. It characterized in that it further comprises a departure prevention tool.

In more detail, the baffle structure further includes a perforated portion formed on the front surface of the baffle structure such that a predetermined amount of deposition fluid flows through the front surface of the baffle structure.

According to the present invention as described above, by causing the baffle structure to be formed in a position adjacent to the inlet side formed in the chamber body, by expanding the particle flow path of the deposition fluid flowing through the inlet in the chamber body, the deposition It can provide the effect that the fluid can be deposited on the deposition object more efficiently.

In addition, through the formation of an extended surface extending toward the top and bottom and left and right, it is possible to further extend the particle flow path of the deposition fluid flowing from the inlet to the top and bottom and left and right, to deposit on the deposition target It can provide the effect of expanding the area.

In addition, the first protrusion formed on the extension surface of the baffle structure may be spaced apart from the inner wall surface of the chamber body by a predetermined distance to secure a flow space in which deposition fluid flowing from the inlet of the chamber body may flow. While being able to be combined with the chamber body, it is possible to provide an effect of preventing the baffle structure from being separated by the pressure generated when the deposition fluid is introduced.

In addition, the second protrusion formed on the extension surface of the baffle structure may be spaced apart from the inner wall surface of the chamber body by a predetermined distance to secure a flow space through which the deposition fluid flowing from the inlet of the chamber body may flow. While being able to be combined with the chamber body, it is possible to provide an effect of preventing the baffle structure from being separated by the pressure generated when the deposition fluid is introduced.

In addition, as the coupling portion of the baffle structure and the chamber body is provided to be detachably attached to each other by magnetic force, it is more convenient and quicker even in a state in which deposition fluid is accumulated compared to the coupling structure using a separate coupling member through a bolt and nut. It is possible to provide an effect capable of separating the baffle structure from the chamber body.

In particular, through the first and the second support formed on the coupling portion, the first fixing to the baffle structure is carried out, and formed on one end surface of the first and second support to the baffle structure through the magnetic force 2 By proceeding with the difference fixing, it is possible to provide an effect that can give a more improved bonding force.

In addition, even if it is easily removable through the coupling by the magnetic force, by the external force that can be applied in the vertical direction and the left and right directions, it is possible to prevent the baffle structure from being easily separated from the coupling portion, more stable vapor deposition process It can provide an effect to proceed.

In addition, through the perforations formed in the baffle structure, it is possible to further improve the area in which some of the deposition fluid can flow, thereby providing an effect of eliciting a particle flow radius of the expanded deposition fluid.

1 is an exemplary view schematically showing a particle flow range of a deposition fluid flowing in a conventional chemical vapor deposition chamber.
FIG. 2 is an exemplary view showing a particle flow range of a deposition fluid flowing in a chemical vapor deposition chamber equipped with a baffle structure of the present invention.
Figure 3 is an exemplary view showing the front and side of the baffle structure of the chemical vapor deposition chamber with a baffle structure according to an embodiment of the present invention.
Figure 4 is an exemplary view showing the front and side of the baffle structure of the chemical vapor deposition chamber with a baffle structure according to another embodiment of the present invention.
5 is an exemplary view showing the front and side surfaces of the baffle structure of the chemical vapor deposition chamber provided with the baffle structure according to another embodiment of the present invention.
6 is an exemplary view illustrating a state in which a baffle structure according to an embodiment of the present invention is coupled to one side wall of the chamber body.
7 is an exemplary view illustrating a state in which a baffle structure is coupled to one side wall of a chamber body according to another embodiment of the present invention.
8 is an exemplary view showing a coupling portion formed in the chamber body according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

In addition, the Example described below does not unduly limit the content of this invention described in the Claim, and the whole structure described in this Embodiment is not necessarily required as a solution of this invention.

In addition, the matters obvious to those skilled in the art and the art may be omitted, and the description of the omitted elements and functions may be sufficiently referred to without departing from the technical spirit of the present invention.

Hereinafter, a baffle structure of a chemical vapor deposition chamber having a baffle structure according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is an exemplary view showing an extended particle flow range of a deposition fluid flowing in a chemical vapor deposition chamber equipped with a baffle structure of the present invention.

First, a chemical vapor deposition chamber equipped with the baffle structure of the present invention will be described in more detail with reference to FIG. 2.

As shown in FIG. 2, the chamber for chemical vapor deposition provided with the baffle structure of the present invention includes a chamber body 100 and a baffle structure 200.

Here, the chamber body 100 is provided to have a cylindrical shape, the inlet 110 is formed to allow the inlet and outlet of the deposition fluid containing the perylene monomer on one side wall, the outlet (so that the deposition fluid flows to the other side wall ( 120) is formed.

In addition, the chamber body 100 is provided to maintain a cylindrical shape in order to maintain the vacuum required for the chemical vapor deposition process, the support jig 400 for supporting the deposition object 500 therein is provided Can be seated.

Next, the baffle structure 200 is provided to expand the particle flow path of the deposition fluid flowing in from the inlet 110, and may be provided to be detachable at a position adjacent to the inlet 110.

In addition, the baffle structure 200 may be provided to be detachable at a position adjacent to the outlet 120 side, thereby expanding the particle flow region of the deposition fluid toward the upper and lower in the chamber body 100. Expansion of the zone through which particles of the deposition fluid flows may proceed.

And, through the baffle structure 200, by allowing the area in which the particles of the deposition fluid flows to be expanded more than in the prior art, more uniform vapor deposition can be carried out for the entire area of the deposition object.

In addition, it is possible to prevent a phenomenon in which the deposition fluid is excessively concentrated in a specific area that may occur in the vapor deposition chamber that has been used conventionally.

As described above, the baffle structure 200 may be provided so that the deposition fluid may be uniformly deposited on the deposition target, thereby providing an effect of further improving the quality of the final product. .

Next, Figure 3 is an exemplary view showing the front and side surfaces of the baffle structure of the chemical vapor deposition chamber provided with the baffle structure according to an embodiment of the present invention.

And, as shown in Figure 3 showing the baffle structure according to an embodiment of the present invention, the baffle structure 200 has an extended surface extending toward the top and bottom and left and right while maintaining a flat plate shape. The first protrusion 210 may be formed at an upper end and a lower end of the extension surface.

Here, the first protrusion 210 is formed to protrude toward one side to be coupled to the inner wall of the chamber body 100 described above, through the formation of the first protrusion 210, as described above In addition to securing the coupling structure with the chamber body 100, it is provided to form a space between the inner wall of the chamber body 100 and the baffle structure.

At this time, through the space formed by the first protrusion 210, the deposition fluid can be flowed upward and sidewards, it is possible to expand the particle flow path of the deposition fluid.

Next, Figure 4 is an exemplary view showing the front and side of the baffle structure of the chemical vapor deposition chamber with a baffle structure according to another embodiment of the present invention.

As shown in FIG. 4 illustrating a baffle structure according to another embodiment of the present invention, a second protrusion 220 may be formed in the baffle structure 200.

Here, the second protrusion 220 is provided on one end of the extension surface extending toward the left and right, out of the extension surface extending from the center of the baffle structure toward the top, bottom, left and right, the inside of the chamber body 100 It is formed to be coupled with the side wall.

Here, the second protrusion 220 is protruded toward one side so as to be coupled to the inner wall of the chamber body 100 described above, like the first protrusion 210 described above, the second protrusion 220 Through the formation of the), as well as securing the coupling structure with the chamber body 100, it is provided to form a space between the inner wall of the chamber body 100 and the baffle structure 200.

In addition, by allowing the first protrusion 210 and the second protrusion 220 to be formed at the same time, it is possible to improve the binding force between the chamber body 100 and the baffle structure 200, the progress of the vapor deposition process When the baffle structure 200 that may occur during the prevention of the phenomenon that the baffle structure 200 is separated from the chamber body 100 by an external force including vibration or pressure caused by a fluid, a more stable vapor deposition process may be performed.

5 is an exemplary view showing the front and side surfaces of the baffle structure of the chemical vapor deposition chamber with a baffle structure according to another embodiment of the present invention, Figure 6 is a baffle structure according to an embodiment of the present invention 7 is an exemplary view showing a state coupled to one side wall of the chamber body, Figure 7 is an exemplary view showing a state in which the baffle structure is coupled to one side wall of the chamber body according to another embodiment of the present invention.

Next, as shown in FIG. 5 illustrating a baffle structure according to another embodiment of the present invention, a perforation portion 230 may be formed in the baffle structure 200.

In particular, the perforation part 230 is formed by providing a plurality of through holes in order to extend the particle flow path of the deposition fluid, so that the deposition fluid is formed on the entire area of the baffle structure, the deposition fluid is the top and bottom of the baffle structure As well as the room and the left and right sides, it is provided so that it can flow out (inlet adjoining side) or inflow (outlet adjoining side) also toward the front.

As shown in FIG. 6 illustrating a state in which a baffle structure according to an embodiment of the present invention is coupled to one side wall of the chamber body, the one side wall of the chamber body 100 of the present invention may be connected to the baffle structure 200. Coupling portion 300a may be formed for coupling.

In this case, the center of the baffle structure 200 may be disposed in the same line as the center of the inlet or the outlet of the chamber body 100, and when the particle flow path of the deposition fluid by the baffle structure 200 is expanded, It can be made to flow uniformly without biasing toward the side of any one of the left and right sides.

On the other hand, as shown in Figure 6, the baffle structure 200 according to an embodiment of the present invention may be formed with a first protrusion 210 for coupling with the coupling portion at the top and bottom of the extension surface The first protrusion 210 may be made of a metal material for coupling through the magnetic force with the coupling part 300a to be described later.

In addition, the coupling part 300a may be provided to have a shape extending in the horizontal direction while providing at least one pair in the chamber body 100. The first support body 310a and the second support body 320a may be provided. ) And magnetic material 330a.

In addition, the first protrusion 210 may be inserted into the coupling part 300a to be coupled to the baffle structure 200 and the chamber body 100.

In particular, the first support 310a is disposed at one end of the coupling portion 300a, and the second support 320a is disposed at a position spaced apart from the first support 310a by a predetermined distance. .

In addition, when only the first protrusion 210 is formed in the baffle structure 200, the first support 310a and the second support 320a may be used to prevent the baffle structure from being separated by gravity. It may be formed to be aligned in the vertical direction.

In addition, the magnetic body 330a is provided to detachably couple the baffle structure 200, which may be made of a metal material, from the chamber body 100.

As described above, as the coupling portion 300a of the baffle structure 200 and the chamber body 100 is provided to be detachable from each other by magnetic force, the coupling structure using a separate coupling member through a bolt and a nut, etc. In comparison, even when the deposition fluid is accumulated, the baffle structure 200 may be separated from the chamber body 100 more easily and quickly.

In particular, the magnetic body 330a is formed to connect one end surface of the first support 310a and the second support 320a to bond the first support 310a and the second support 320a to each other. The first support 310a and the second support 320a in the closed state are provided to be attached to the inner wall of the chamber body 100.

Next, as shown in FIG. 7 showing a state in which the baffle structure is coupled to one side wall of the chamber body according to another embodiment of the present invention, the baffle structure is the left and right sides of the extension surface of the baffle structure 200. It is provided at one end of the extending surface extending toward the room, the second protrusion 220 may be additionally formed, the coupling portion 300b for coupling with the second protrusion may be formed.

In particular, through the formation of the second protrusion 220, the baffle structure 200 is moved to the side by the minute vibration or the pressure retained in the deposition fluid that may occur during the vapor deposition process, the chamber body 100 Deviation from can be prevented.

In this case, the second protrusion 220 may be made of a metal material similarly to the first protrusion 210 described above, for coupling through the magnetic force with the coupling portion 300b.

In addition, the coupling part 300b is disposed to have a shape extending in the vertical direction in order to couple the second protrusion 220 to the chamber body while providing at least one pair in the chamber body 100. It may be, and may be provided to include a first support 310b, a second support 320b and a magnetic body 330b.

In addition, the first support 310b and the second support 320b are provided to be spaced apart from each other by a predetermined distance in the left-right direction, and one side of the first support 310b and one of the second support 320b. While interconnecting the side, through the magnetic body 330b that retains the magnetic, it is possible to couple through the magnetic force with the second protrusion 200.

In addition, similar to the coupling portion 300a coupled to the first protrusion 210 described above, through the coupling portion 300b coupled to the second protrusion 220 by magnetic force, a separate bolt or nut may be used. Compared to the coupling structure using the coupling member, even when the deposition fluid is accumulated, the baffle structure 200 may be provided more easily and quickly from the chamber body 100.

In addition, although not particularly illustrated in the drawings, the coupling portions 300a and 300b are provided to be deformable by external force, and the ends of the first protrusion 210 and the second protrusion 220 have a predetermined curvature. By doing so, it may be provided to enable interference fit between each other.

Accordingly, detachment between the coupling part 300a and the first protrusion 210 and detachment between the coupling part 300b and the second protrusion 220 may be performed more easily.

Next, Figure 8 is an exemplary view showing a coupling portion formed in the chamber body according to another embodiment of the present invention.

As shown in FIG. 8 illustrating a coupling portion formed in the chamber body according to another embodiment of the present invention, the separation prevention holes 340a and 340b in the coupling portions 300a and 300b formed on the inner wall of the chamber body. It may be provided to further include.

In addition, the escape preventing openings 340a and 340b may be caused by the vibration of the baffle structure (not shown) from the chamber body 100 by gravity or by the pressure of the deposition fluid and the minute vibrations that may occur during the deposition process. In order to prevent separation, the first and second supports 310a and 310b and 320a and 320b are combined with each other.

In particular, the coupling part 300a having a shape extending in a horizontal direction so that the first protrusions (not shown) formed at the upper and lower ends of the extension surface of the baffle structure (not shown) is coupled to the inlet of the chamber body 100. At least one pair may be provided so as to be symmetrical to the top and bottom with respect to the (110).

In this case, at least one pair of the coupling parts 300a may be provided to be parallel to each other, and the separation room may be disposed at one end of the first support 310a and the second support 320a provided below the inlet 110. The earth 340a may be provided, and the separation preventing opening 340a may be provided at the other end of the first support 310a and the second support 320a provided above the inlet 110.

By having the coupling part 300a having the coupling structure as described above, the baffle structure (not shown) is separated from the chamber body 100 even when an external force applied to the chamber body 100 in the left and right directions occurs. By doing so, it becomes possible to proceed with a more stable and reliable deposition process.

In addition, the coupling part 300b having a shape extending in the vertical direction so that the second protrusions (not shown) formed on both side ends of the extension surface of the discharge structure are coupled to the inlet 110 of the chamber body 100. At least one pair may be provided to be symmetrical to both left and right side ends.

In this case, at least one or more pairs of the coupling parts 300b are provided to be parallel to each other, and the separation room is disposed at the lower ends of the first support 310b and the second support 320b provided on the left and right sides of the inlet 110. Earth 340b may be provided.

By having the coupling part 300b having the coupling structure as described above, the baffle structure (not shown) is separated from the chamber body 100 even when an external force applied in the vertical direction to the chamber body 100 occurs. By doing so, it becomes possible to proceed with a more stable and reliable deposition process.

As described above, the present invention, during the chemical vapor deposition process using a deposition fluid containing a paraline monomer, by expanding the particle flow path of the deposition fluid to enable uniform deposition on the deposition target product quality of the final product By improving the ease of maintenance of the chamber through the coupling portion having a magnetic formed to be easily detachable from the baffle body even after the deposition process, PM (Prevent Maintenance) time can be shortened to improve productivity It is a main technical idea to provide a chamber for chemical vapor deposition provided with a baffle structure.

In the following description of the present invention and obvious to those skilled in the art, descriptions may be omitted, and the description of the omitted elements and functions may be sufficiently referred to without departing from the technical spirit of the present invention. .

The description of the configuration and functions of the above-described parts have been described separately from each other for convenience of description, and any configuration and function may be incorporated into other components or be folded or further subdivided as necessary.

As described above with reference to embodiments of the present invention, the present invention is not limited thereto, and various modifications and applications are possible.

That is, those skilled in the art will readily appreciate that many modifications are possible without departing from the spirit of the invention.

In addition, when it is determined that the detailed description of the known function and its configuration or the coupling relationship for each configuration of the present invention may unnecessarily obscure the subject matter of the present invention, it should be noted that the detailed description is omitted. something to do.

100: chamber body
110: inlet
200: baffle structure
210: first protrusion
220: second protrusion
230: perforation
300: coupling part
310: first support
320: second support
330: magnetic material
340: escape lock
400: support jig
500: deposition target
10: chamber body
20: support jig
30: deposition target

Claims (8)

A chamber body formed with an inlet and an outlet; And
And at least one baffle structure provided to be detachably attached to a position adjacent to the inlet for expanding the flow path of the fluid flowing from the inlet.
The chamber body,
And a coupling part provided to be coupled to an end of an extension surface of the baffle structure and provided to be coupled to each other by the extension surface and a magnetic force.
The baffle structure,
The chamber for chemical vapor deposition provided with a baffle structure, characterized in that the coupling portion is made of a metallic material to be detachable. The method of claim 1,
The baffle structure,
A baffle is provided so as to have an extended surface extending upward and downward and left and right while retaining a flat plate shape, and the center of the baffle structure is disposed in line with the center of the inlet or outlet of the chamber body. Chemical vapor deposition chamber having a structure. The method of claim 1,
The baffle structure,
A baffle structure further comprising: a first protrusion provided at one end of an extension surface extending upward and downward from a center of the baffle structure, the first protrusion being coupled to an inner wall of the chamber body. Chamber for chemical vapor deposition. The method of claim 3, wherein
The baffle structure,
The second baffle is provided on one end of the extending surface extending toward the left and right from the center of the baffle structure, the second protrusion is provided to be coupled to the inner wall of the chamber body; Chamber for vapor deposition. delete The method of claim 1,
The coupling part,
A first support;
A second support spaced apart from the first support by a predetermined distance;
And a magnetic body formed on one end surface of the first support and the second support. The method of claim 6,
The coupling part,
A separation prevention tool formed at both ends or bottom ends of the first support and the second support and provided to prevent the baffle structure from being separated from the chamber body by external force applied in up, down, left and right directions; A chemical vapor deposition chamber having a baffle structure, characterized in that the. The method of claim 1,
The baffle structure,
And a perforation formed in the front surface of the baffle structure to allow a predetermined amount of deposition fluid to flow through the front surface of the baffle structure.

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