KR102003698B1 - A integrated circuit(ic), adpative power supply using ic characteristics and adpative power supply method according to ic characteristics, electric equipment having the same, and manufacturing method of ic - Google Patents
A integrated circuit(ic), adpative power supply using ic characteristics and adpative power supply method according to ic characteristics, electric equipment having the same, and manufacturing method of ic Download PDFInfo
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- KR102003698B1 KR102003698B1 KR1020120072167A KR20120072167A KR102003698B1 KR 102003698 B1 KR102003698 B1 KR 102003698B1 KR 1020120072167 A KR1020120072167 A KR 1020120072167A KR 20120072167 A KR20120072167 A KR 20120072167A KR 102003698 B1 KR102003698 B1 KR 102003698B1
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- 238000004519 manufacturing process Methods 0.000 title description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 281
- 238000003860 storage Methods 0.000 claims description 31
- 230000000630 rising effect Effects 0.000 claims description 25
- 230000000737 periodic effect Effects 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 claims description 4
- 230000005856 abnormality Effects 0.000 claims description 2
- 230000003044 adaptive effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- 230000020169 heat generation Effects 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
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- 238000004364 calculation method Methods 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2227—Standby or low power modes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
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Abstract
The present invention provides an adaptive power supply for a semiconductor integrated circuit, comprising: a power input unit receiving power from an external power supply unit; A core driven by the power input through the power input unit; And determining a characteristic of the core and controlling the power supply unit to supply the power according to the determined characteristic.
Description
The present invention provides a semiconductor integrated circuit that can be supplied with an optimized power supply according to the characteristics of the semiconductor integrated circuit, an adaptive power supply device and a power supply method capable of supplying an optimized power to the semiconductor integrated circuit, and a power supply optimized for the semiconductor integrated circuit. The present invention relates to an electronic device including an adaptive power supply capable of supplying an electronic device, and a method of manufacturing a semiconductor integrated circuit.
Conventional semiconductor integrated circuit (IC) power supplies only supply a fixed power source as guaranteed in the specification, as shown in FIG. However, even in the case of the semiconductor chips within the specification, the chips corresponding to each characteristic corner may have low VCC margin or excessive power consumption and heat generation depending on the characteristics of the semiconductor chips. Additional circuitry and countermeasures may be needed to compensate for this.
In addition, in the case of changing to another semiconductor integrated circuit having a similar power supply specification rather than the same semiconductor integrated circuit, it is necessary to modify the power supply circuit due to the characteristic difference. In particular, even if a main board including a power supply is not changed and only a board separately configured by a function upgrade or the like is needed, a circuit change of the main board power supply may be necessary.
In semiconductor integrated circuits, dispersion occurs depending on the wafer and the process. 2 is a graph showing the distribution of each semiconductor wafer and its specification range.
The power supply specifications are determined tightly in consideration of the margins caused by scattering of wafers and processes due to semiconductor characteristics. Therefore, this tight power supply specification can result in a large number of chips in the process resulting in reduced yield.
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described problems, and to provide a power supply method for identifying characteristics of semiconductor integrated circuits used in a TV system and supplying power optimized for each characteristic to the semiconductor integrated circuits. .
Another object of the present invention is to increase the manufacturing yield of semiconductor integrated circuits by minimizing the overall power consumption and heat dissipation and freeing the power specifications of the semiconductor integrated circuits by adaptively supplying power in a direction that complements the characteristics of semiconductor integrated circuits. Is in.
It is still another object of the present invention to apply a system for changing a semiconductor integrated circuit, a system for changing a module including a semiconductor integrated circuit, or the like to change characteristics of the same semiconductor integrated circuit as well as a semiconductor integrated circuit having a power supply specification of a similar area. The present invention provides a semiconductor integrated circuit capable of adaptively changing a power supply even when a circuit is changed, and compatibility according to a module change.
Another object of the present invention is to store a characteristic index value according to the characteristics of the semiconductor integrated circuit, a semiconductor integrated circuit, a method of manufacturing a semiconductor integrated circuit, an electronic device and a semiconductor integrated circuit which can be adaptively supplied with a power according to the chip characteristics It is an object to provide a driving method.
According to an aspect of the present invention, there is provided a semiconductor integrated circuit, comprising: a power input unit receiving power from an external power supply unit; A core driven by the power input through the power input unit; And a controller which determines a characteristic of the core and controls the power supply unit to supply the power according to the determined characteristic.
The semiconductor integrated circuit further includes a phase locked loop (PLL) unit, and the controller determines the characteristics of the core by analyzing a phase locked loop of the phase locked loop (PLL) unit. Do.
In the semiconductor integrated circuit, the characteristic is preferably determined by a PLL rising / falling slew rate.
In the semiconductor integrated circuit, the characteristic may include a first characteristic NN when the PLL rising / falling slew rate falls within a predetermined range, and a second characteristic FF when the phase fixed loop falls below the predetermined range. When the predetermined range is exceeded, it is preferable to include the third (SS) characteristic.
In the semiconductor integrated circuit, when the characteristic is determined as the second characteristic FF, the controller may supply power lower than the reference power.
In the semiconductor integrated circuit, when the characteristic is determined to be the third characteristic SS, the controller may supply power higher than the reference power.
In the semiconductor integrated circuit, the lowered power source is preferably included within the specification range of the semiconductor integrated circuit.
In the semiconductor integrated circuit, the elevated power supply is preferably included within the specification range of the semiconductor integrated circuit.
The semiconductor integrated circuit may further include a storage unit configured to store chip specific information including an index value of the core characteristic.
In the semiconductor integrated circuit, the controller may control the power supply unit to supply power corresponding to the index value of the core characteristic.
In the semiconductor integrated circuit, the index value is preferably an index value classified according to the magnitude of the leakage current measurement value of the transistor in the core.
The semiconductor integrated circuit may further include at least two output ports connected to the power supply device.
In the semiconductor integrated circuit, the controller may transmit a control signal according to the characteristics of the core to the power supply device through the output port.
In the semiconductor integrated circuit, the output port may include an output port for outputting whether the semiconductor integrated circuit state is normal.
In the semiconductor integrated circuit, it is preferable that the normal state of the semiconductor integrated circuit is output as 'high (H)' and 'low (L)'.
In the semiconductor integrated circuit, whether the state of the semiconductor integrated circuit is normal is output as one of 'high' and 'low' and 'cyclically high' and 'low'. It is desirable to be.
The semiconductor integrated circuit may further include a second controller configured to check periodic fluctuation values of the 'high (H)' and the 'low (L)'.
In the semiconductor integrated circuit, in the abnormal state as a result of the check, it is preferable to restart the power of the semiconductor integrated circuit by turning the power from 'OFF' to 'ON'.
In the semiconductor integrated circuit, the restarted semiconductor integrated circuit preferably operates a boot program based on information stored in an internal storage unit.
A power supply apparatus for a semiconductor integrated circuit according to an embodiment of the present invention, the power supply unit for supplying power to the semiconductor integrated circuit; And a control unit controlling the power supply unit according to the characteristics of the semiconductor integrated circuit.
In the power supply device, the control unit may determine a characteristic of the semiconductor integrated circuit by analyzing a phase locked loop of a phase locked loop (PLL) portion of the semiconductor integrated circuit.
In the power supply, the characteristic may be determined by a PLL rising / falling slew rate.
In the power supply device, the characteristic may include a first characteristic NN when the PLL rising / falling slew rate falls within a predetermined predetermined range, and a second characteristic FF when less than the predetermined range. When the predetermined range is exceeded, it is preferable to include the third (SS) characteristic.
In the power supply device, when the characteristic is determined as the second characteristic FF, the controller may supply power lower than the reference power.
In the power supply device, when the characteristic is determined as the third characteristic SS, the controller may supply power higher than the reference power.
In the power supply device, the lowered power supply is preferably included in the specification range of the semiconductor integrated circuit.
In the power supply device, the elevated power is preferably included within the specification range of the semiconductor integrated circuit.
In the power supply device, the control unit may control the power supply unit to supply power corresponding to chip specific information including an index value of a core characteristic of the semiconductor integrated circuit.
The power supply device may further include an input port for inputting characteristic information of the semiconductor integrated circuit.
In the power supply device, the controller may control the power supply device based on input characteristic information of the semiconductor integrated circuit.
In the power supply device, the input port preferably includes an input port for inputting whether the semiconductor integrated circuit state is normal.
It is preferable that the normal state of the semiconductor integrated circuit is output as 'high' and 'low'.
In the power supply, the state of the semiconductor integrated circuit state is output as one of 'high (H)' and 'low (L)' and a periodic variation value of 'high (H)' and 'low (L)'. It is desirable to be.
The power supply device may further include a second control unit which checks periodic fluctuation values of the 'high' and 'low'.
In the power supply device, when the check result is in an abnormal state, the power of the semiconductor integrated circuit may be restarted by turning the power from the “OFF” to the “ON”.
In the power supply device, the restarted semiconductor integrated circuit preferably operates a boot program based on information stored in an internal storage unit.
According to an embodiment of the present invention, a power supply method of a semiconductor integrated circuit may include supplying reference power to the semiconductor integrated circuit; Determining characteristics of the semiconductor integrated circuit according to the power source; The method may include controlling the power supply unit to supply power according to the determined characteristics of the semiconductor integrated circuit.
The power supply method may further include determining a characteristic of the semiconductor integrated circuit by analyzing a phase locked loop of a phase locked loop (PLL).
In the power supply method, the characteristic is preferably determined by a PLL rising / falling slew rate.
In the power supply method, the characteristic is a first characteristic (NN) when the PLL rising / falling slew rate falls within a predetermined range, and the second characteristic (FF) when it is less than the predetermined range. When the predetermined range is exceeded, it is preferable to include the third (SS) characteristic.
In the power supply method, when the characteristic is determined as the second characteristic FF, the power supply unit may supply power lower than the reference power.
In the power supply method, when the characteristic is determined to be the third characteristic SS, the power supply unit may supply power higher than the reference power.
In the power supply method, the lowered power is preferably included in the specification range of the semiconductor integrated circuit.
In the power supply method, the elevated power is preferably included in the specification range of the semiconductor integrated circuit.
The power supply method may further include storing chip specific information including an index value of a core characteristic of the semiconductor integrated circuit in a storage unit of the semiconductor integrated circuit.
In the power supply method, preferably, the controlling step includes controlling the power supply unit to supply power corresponding to the index value of the core characteristic.
In the power supply method, the index value is preferably an index value classified according to the magnitude of the leakage current measurement value of the transistor in the core.
In the power supply method, it is preferable to include the step of outputting a control signal for controlling the power supply in accordance with the core characteristics of the semiconductor integrated circuit.
In the power supply method, it is preferable that the step of outputting whether the internal operating state of the semiconductor integrated circuit.
In the power supply method, the normal part may be output as 'high (H)' and 'low (L)'.
In the power supply method, the normal state may be output as one of 'high (H)' and 'low (L) and a periodic variation value of' high (H) 'and' low (L) '.
In the power supply method, the method may further include checking a periodic variation value of the 'high' and the 'low'.
In the power supply method, it is preferable to restart the power source of the semiconductor integrated circuit from 'off' to 'on' in the abnormal state as a result of the check.
In the power supply method, it is preferable that the restarted semiconductor integrated circuit operates a booting program based on information stored in an internal storage unit.
An electronic device including a semiconductor integrated circuit and a power supply device according to an exemplary embodiment of the present invention preferably includes the semiconductor integrated circuit of
Electronic device including a semiconductor integrated circuit and a power supply device according to another embodiment of the present invention preferably comprises the power supply device of claim 18 to 32.
A method of manufacturing a semiconductor integrated circuit according to an embodiment of the present invention includes measuring a leakage current value of a core of the semiconductor integrated circuit; Generating unique information including a characteristic index value corresponding to the measured leakage current value; And storing the unique information in the semiconductor integrated circuit.
Power supply of the semiconductor integrated circuit according to the present invention can stabilize the platform (Patform) and reduce the cost by adaptively supplying a more efficient and optimized power according to the characteristics of the semiconductor integrated circuit applied to the TV system.
In addition, it is possible to provide an optimal power supply for the changed characteristics of the semiconductor integrated circuit in a platform in which a separate module receiving the corresponding power is supplied or a semiconductor integrated circuit unit is changed.
In addition, by identifying the characteristics of the semiconductor integrated circuit and adaptively supplying power, the power specification can be set more freely, thereby increasing the semiconductor process yield.
1 is a block diagram showing a power supply apparatus of a conventional semiconductor integrated circuit;
FIG. 2 is a graph showing wafer-specific dispersion and spec range according to the semiconductor integrated circuit; FIG.
3 is a block diagram showing a display device that can be upgraded to improve functionality and performance;
4 is a block diagram showing a configuration of a semiconductor integrated circuit according to an embodiment of the present invention;
5 is a diagram illustrating an example of semiconductor integrated circuit characteristics according to PLL slow rate analysis;
6 is a block diagram showing a configuration of a power supply device of a semiconductor integrated circuit according to an embodiment of the present invention; and
7 is a block diagram showing a configuration of a power supply device for a semiconductor integrated circuit according to another embodiment of the present invention;
8 is a block diagram showing a configuration of a semiconductor integrated circuit according to another embodiment of the present invention;
9 is a flowchart illustrating a power supply method of a semiconductor integrated circuit according to the present invention;
10 is a flowchart illustrating a method of manufacturing a semiconductor integrated circuit according to the present invention;
11 is a block diagram illustrating a power supply method of a semiconductor integrated circuit according to another embodiment of the present invention; and
12 is a block diagram illustrating a power supply method of a semiconductor integrated circuit according to still another embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. For convenience of description, parts not directly related to the present invention are omitted, and like reference numerals designate like elements throughout the specification.
3 is a block diagram illustrating a configuration of a
As shown in FIG. 3, the
In the
In addition, since the
The
The
The
The
The image signal received from the at least one
The
The
The
The
The
The first
The first
According to the present exemplary embodiment, the
The
The second
As shown in FIG. 3, since the
In addition, the
The
The
The semiconductor integrated circuits IC and 560 may include a
The
The
The phase locked loop (PLL)
The
5 illustrates an example of a sample determined according to PLL rise / fall slew rate analysis for the semiconductor integrated
The
When the PLL rising / falling slew rate is the semiconductor integrated
In the case of the semiconductor integrated
In the case of the semiconductor integrated
6 shows a
7 shows a
Electronic devices such as the upgraded
As shown in FIG. 7, the
As such, by supplying optimized power to all the semiconductor integrated circuits of the upgraded
As shown in FIGS. 4 to 7, instead of analyzing the PLL rising / falling slew rate of the
8 is a diagram showing the configuration of a semiconductor integrated
The semiconductor integrated
For example, the semiconductor integrated
Such a characteristic index value may be included in the unique information. Here, the unique information may mean an identification (hereinafter, referred to as a chip ID) for identifying information about a process lot number, a wafer number, a position on a wafer, and the like of the semiconductor integrated circuit. That is, the characteristic index value may be inserted into the chip ID and stored in the semiconductor integrated
The
That is, the
In detail, if the characteristic index value included in the semiconductor integrated
As such, the
8 is a block diagram illustrating a detailed configuration of a semiconductor integrated
The
Typically, the core consists of a metal oxide semiconductor field effect transistor (MOSFET). The MOSFET has a large drain-source leakage current I ds when the switching speed is high, and a small drain current between the drain and source when the switching speed is slow. By using this characteristic, the present invention measures leakage current of at least one transistor constituting a core when manufacturing a semiconductor integrated circuit, and stores a specific index value according to a range to which the measured leakage current value belongs.
For example, when the leakage current of the transistor is 10 to 30 mA, the characteristic index value indicating that the first group, if 30 to 50 mA, the characteristic index value indicating that the second group, and 50 to 70 mA if the third group The characteristic index value indicated may be stored in the
Here, the range of the leakage current as a reference for classifying the inserted characteristic index values may be set according to the magnitude and clock frequency of the core voltage for driving the semiconductor integrated circuit.
Specifically, semiconductor integrated circuits manufactured to have a specification desired by a user may also have different characteristics due to dispersion in semiconductor processes. In particular, the semiconductor integrated circuits present at the corners of the wafer may have a larger or smaller leakage current value between the drain and the source than the semiconductor integrated circuits satisfying the specification. On the other hand, semiconductor integrated circuits having a large leakage current have a high heat generation and power consumption due to an increase in current consumption, but may operate at a high clock frequency even when a low core voltage is applied. On the contrary, semiconductor integrated circuits with small leakage current operate at a high clock frequency only when a high core voltage is applied, but heat generation and power consumption are not high even when a high core voltage is applied because the leakage current is small.
In the present invention, the semiconductor integrated circuits may be classified into different groups using the above characteristics.
First, semiconductor integrated circuits having a specification desired by a user are classified into one group. For example, applying a core voltage of 1 V assumes that the semiconductor integrated circuit operating at 1 GHz is a specification desired by the user. When the leakage current value measured in the semiconductor integrated circuits operating at 1 GHz when the core voltage of 1 V is applied is 30 to 50 mA, the same index value is applied to the semiconductor integrated circuits having the leakage current value in the corresponding range. Can be inserted into one group.
In addition, semiconductor integrated circuits having a larger or smaller leakage current value than a semiconductor integrated circuit having a specification desired by a user may be classified into different groups. For example, when the leakage current value measured in the semiconductor integrated circuits to which the core voltage of 1.1 V is applied to operate at 1 GHz falls within 10 to 30 mA, the semiconductor integrated circuits having the leakage current value in the corresponding range Insert the same index value into the other group. When the leakage current value measured in the semiconductor integrated circuits to which a core voltage of 0.9 V is applied to operate at 1 GHz falls within 30 to 50 mA, the same applies to the semiconductor integrated circuits having the leakage current value in the corresponding range. Insert index values to classify into another group.
As described above, the semiconductor integrated circuits may be classified by inserting characteristic index values into the semiconductor integrated circuits using the leakage current values of the semiconductor integrated circuits.
The
As in the above-described example, it is assumed that the semiconductor integrated circuits are classified into first to third groups according to leakage current values. Specifically, the first group is semiconductor integrated circuits that must apply a core voltage of 1.1 V to operate at 1 GHz, and the second group is semiconductor integrated circuits that must apply a core voltage of 1 V to operate at 1 GHz. It is assumed that the third group is semiconductor integrated circuits that must apply a core voltage of 0.9 V to operate at 1 GHz.
In this case, if the characteristic index value read from the
Accordingly, the
The
The
In detail, the
9 is a flowchart illustrating a method of driving a semiconductor integrated circuit according to an embodiment of the present invention.
First, when the semiconductor integrated circuit which stores the unique information including the characteristic index value is mounted in the electronic device, the unique information stored in the
Thereafter, a power source corresponding to the characteristic index value included in the unique information is supplied to the semiconductor integrated circuit to drive the semiconductor integrated circuit (S420). Specifically, the semiconductor integrated
10 is a flowchart illustrating a method of manufacturing a semiconductor integrated circuit that can be mounted and used in an electronic device according to an embodiment of the present invention.
First, the leakage current value of the core of the semiconductor integrated circuit is measured (S510). Specifically, the leakage current value between the drain and the source of the transistor constituting the core is measured.
Thereafter, chip-specific information including a characteristic index value corresponding to the measured leakage current value is generated (S520). Then, the chip specific information is stored in the semiconductor integrated circuit (S530).
Specifically, different characteristic index values are inserted into the chip specific information according to the range to which the measured leakage current value belongs.
For example, if the measured leakage current value belongs to the first range, the index value indicating that the first group, if it belongs to the second range, the index value indicating the second group, and if the third range belongs to the third group The index value may be inserted into the chip specific information and stored in the semiconductor integrated circuit.
The chip specific information may mean a chip identification (hereinafter, referred to as a chip ID) for identifying information about a process lot number, a wafer number, a position on a wafer, and the like of the chip. That is, the characteristic index value may be inserted into the chip ID and embedded in the semiconductor integrated circuit.
Meanwhile, the program for performing the method according to various embodiments of the present disclosure described above may be stored and used in various types of recording media.
Specifically, the code for performing the above-described methods may include random access memory (RAM), flash memory, read only memory (ROM), erasable programmable ROM (EPROM), electronically erasable and programmable ROM (EPROM), register, hard drive. It may be stored in various types of recording media readable by the terminal, such as a disk, a removable disk, a memory card, a USB memory, a CD-ROM, and the like.
11 illustrates an output port for controlling the
Based on the different characteristic data of the semiconductor integrated
Values according to the characteristics of the semiconductor integrated
If
Accordingly, in order to solve this problem, as shown in FIG. 12,
Output port 3 (# 3) outputs "L or 0" when the internal operation is not performed normally, and the
After the semiconductor integrated
Output 4 (# 4) is output as "L or 0" or "H or 1" when the internal operation is not normal, and the signal is repeated as H → L → H in normal state Let's do it. At this time, for example, the
The core voltage (VDDC) according to the status output of the 3rd and 4th output ports (# 3, # 4) can be set as shown in Table 2 below.
In this case, the restarted semiconductor integrated circuit may operate a boot program based on information stored in the
While many embodiments of the invention have been shown and described thus far, those skilled in the art will be able to modify the embodiments without departing from the spirit or spirit of the invention. Accordingly, the scope of the invention should not be limited to the embodiments described thus far but rather by the appended claims and their equivalents.
110,210,310,510,610: power supply
160,560,660: semiconductor integrated circuit
164,564,664: core
200: display device
300: upgrade device
366: PLL section
368,518, 538, 568,668: control unit
669: storage
Claims (57)
A power input unit receiving power from an external power supply unit;
A core driven by the power input through the power input unit;
A phase locked loop (PLL) unit for matching an input signal to a reference frequency;
Analyze the PLL rising slew rate or the PLL falling slew rate of the phase-locked loop portion measured while a constant voltage is applied to the semiconductor integrated circuit,
And a control unit controlling the power supply unit to reduce or increase the power supplied from the power supply unit when the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate is outside a predetermined predetermined range. Semiconductor integrated circuit.
And the control unit causes the power supply unit to supply a power lower than a reference power source when the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate is determined to be less than the predetermined range.
And the controller is configured to cause the power supply unit to supply power higher than a reference power source when the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate exceeds the predetermined range.
The power supply lower than the reference power supply is a semiconductor integrated circuit, characterized in that included in the specification range of the semiconductor integrated circuit.
And a power supply higher than the reference power supply is within a specification range of the semiconductor integrated circuit.
And a storage unit which stores chip specific information including a characteristic index value of the core.
And the control unit controls the power supply unit to supply power corresponding to the characteristic index value of the core.
Wherein the characteristic index value is an index value classified according to a magnitude of a leakage current measurement value of a transistor in the core.
And at least two output ports connected to the power supply and outputting values corresponding to the characteristics of the semiconductor integrated circuit.
And the control unit transmits a control signal according to the characteristics of the core to the power supply unit through the output port.
And the output port comprises an output port for outputting whether the semiconductor integrated circuit state is normal.
The normal state of the semiconductor integrated circuit state is a semiconductor integrated circuit, characterized in that output in the "high (H)" and "low (L)".
The semiconductor integrated circuit may be normally output as one of 'high' and 'low' as a periodic variation value of 'high' and 'low'. Integrated circuits.
And a second control unit which checks the periodic fluctuation values of the 'high (H)' and the 'low (L)'.
And in the abnormality state as a result of the check, restarting the power of the semiconductor integrated circuit from 'off' to 'on'.
The restarted semiconductor integrated circuit is a semiconductor integrated circuit, characterized in that for running a boot program based on the information stored in the internal storage.
A power supply unit supplying power to the semiconductor integrated circuit;
Analyze the PLL rising slew rate or the PLL falling slew rate of the phase-locked loop portion of the semiconductor integrated circuit, which is measured while a constant voltage is applied to the semiconductor integrated circuit. And controlling the power supply to reduce or increase power supplied from the power supply to the semiconductor integrated circuit when the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate is outside a predetermined range. A power supply device for a semiconductor integrated circuit comprising a control unit.
The control unit supplies power to the semiconductor integrated circuit if the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate is less than the predetermined range, so that the power supply unit supplies a power lower than a reference power supply. Device.
The control unit causes the power supply unit to supply power higher than a reference power source when the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate is determined to exceed the predetermined range. Power supply.
And a power supply lower than the reference power supply is included in the specification range of the semiconductor integrated circuit.
And a power supply higher than the reference power supply is included in the specification range of the semiconductor integrated circuit.
And the control unit controls the power supply unit to supply power corresponding to chip specific information including a characteristic index value of the core of the semiconductor integrated circuit.
And a input port for inputting characteristic information of the semiconductor integrated circuit.
And the control unit controls the power supply device based on the input characteristic information of the semiconductor integrated circuit.
And the input port comprises an input port for inputting whether the state of the semiconductor integrated circuit is normal.
The normal state of the semiconductor integrated circuit state is supplied to the 'high (H)' and 'low (L) input power supply device for a semiconductor integrated circuit.
The semiconductor integrated circuit may be normally input as one of 'high' and 'low' and 'cyclically high' and 'low'. Power supply for integrated circuits.
And a second control unit which checks the periodic fluctuation values of the 'high (H)' and the 'low (L)'.
The power supply of the semiconductor integrated circuit, characterized in that for restarting the power of the semiconductor integrated circuit from the "off" to "on" in the abnormal state.
The restarted semiconductor integrated circuit is a power supply device for a semiconductor integrated circuit, characterized in that for operating a boot program based on the information stored in the internal storage.
Supplying a reference power source to the semiconductor integrated circuit;
Analyzing a PLL rising slew rate or a PLL falling slew rate of a phase-locked loop portion of the semiconductor integrated circuit measured while the reference power is applied to the semiconductor integrated circuit. Making a step;
Controlling the power supply to reduce or increase power supplied from the power supply to the semiconductor integrated circuit when the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate is outside a predetermined range. Power supply method of a semiconductor integrated circuit comprising a.
And if the analyzed phase-locked loop rising slew rate or phase-locked loop falling slew rate is determined to be less than the predetermined range, supplying power to the power supply unit lower than a reference power supply.
If the analyzed phase locked loop rising slew rate or phase locked loop falling slew rate exceeds the predetermined range, the power supply unit supplies a power higher than a reference power supply. .
And a power supply lower than the reference power supply is within a specification range of the semiconductor integrated circuit.
A power supply higher than the reference power supply is included in the specification range of the semiconductor integrated circuit.
And storing chip-specific information including a characteristic index value of the core of the semiconductor integrated circuit in a storage unit of the semiconductor integrated circuit.
The controlling of the power supply unit includes controlling the power supply unit to supply power corresponding to the characteristic index value of the core.
The characteristic index value is a power supply method of a semiconductor integrated circuit, characterized in that the index value classified according to the magnitude of the leakage current measurement value of the transistor in the core.
The semiconductor integrated circuit power supply method of the semiconductor integrated circuit comprising the step of outputting a control signal for controlling the power supply in accordance with the characteristics of the core.
And supplying whether the semiconductor integrated circuit is normally operating.
The normal power supply method of a semiconductor integrated circuit, characterized in that the output is "high (H)" and "low (L).
The power supply of the semiconductor integrated circuit is characterized in that the normal state is output as a periodic change value of one of 'high (H)' and 'low (L)' and 'high (H) and' low (L) '. Way.
And checking the periodic fluctuation values of the 'high (H)' and 'low (L)'.
And in response to the check, turning the power of the semiconductor integrated circuit from 'off' to 'on' to restart the semiconductor integrated circuit.
The restarted semiconductor integrated circuit power supply method of the semiconductor integrated circuit, characterized in that for operating a boot program based on the information stored in the storage.
20. The electronic device of claim 1, wherein the semiconductor integrated circuit comprises the semiconductor integrated circuit according to any one of claims 1 and 5 to 19.
The power supply device is an electronic device comprising the power supply device of any one of claims 20 and 24 to 36.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12195555.3A EP2610704A3 (en) | 2011-12-28 | 2012-12-04 | Integrated Circuit (IC), Adaptive Power Supply Using IC Characteristics and Adaptive Power Supply Method According to IC Characteristics, Electronic Device Including the same and Manufacturing Method of IC |
| US13/711,876 US9513649B2 (en) | 2011-12-28 | 2012-12-12 | Integrated circuit (IC), adaptive power supply using IC characteristics and adaptive power supply method according to IC characteristics, electronic device including the same and manufacturing method of IC |
| CN201210585175.4A CN103199856B (en) | 2011-12-28 | 2012-12-28 | Integrated circuit, power supply and method of supplying power to, electronic equipment and manufacturing method for integrated curcuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110144958 | 2011-12-28 | ||
| KR20110144958 | 2011-12-28 | ||
| KR20120010061 | 2012-01-31 | ||
| KR1020120010061 | 2012-01-31 |
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| KR20130076683A KR20130076683A (en) | 2013-07-08 |
| KR102003698B1 true KR102003698B1 (en) | 2019-10-01 |
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| KR1020120072167A KR102003698B1 (en) | 2011-12-28 | 2012-07-03 | A integrated circuit(ic), adpative power supply using ic characteristics and adpative power supply method according to ic characteristics, electric equipment having the same, and manufacturing method of ic |
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| WO2015183268A1 (en) * | 2014-05-29 | 2015-12-03 | Hewlett-Packard Development Company, L.P. | Voltage selectors coupled to processor cores |
| KR102661094B1 (en) * | 2021-05-21 | 2024-04-26 | (주)링크일렉트로닉스 | LED light source separation type smart LED power supply that adaptively supplies power according to rated power of the LED light source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020026597A1 (en) * | 1998-09-25 | 2002-02-28 | Xia Dai | Reducing leakage power consumption |
| US20040103330A1 (en) * | 2002-11-25 | 2004-05-27 | Bonnett William B. | Adjusting voltage supplied to a processor in response to clock frequency |
| KR100653065B1 (en) * | 2005-07-21 | 2006-12-01 | 삼성전자주식회사 | Electronic equipment system and control method thereof |
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2012
- 2012-07-03 KR KR1020120072167A patent/KR102003698B1/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020026597A1 (en) * | 1998-09-25 | 2002-02-28 | Xia Dai | Reducing leakage power consumption |
| US20040103330A1 (en) * | 2002-11-25 | 2004-05-27 | Bonnett William B. | Adjusting voltage supplied to a processor in response to clock frequency |
| KR100653065B1 (en) * | 2005-07-21 | 2006-12-01 | 삼성전자주식회사 | Electronic equipment system and control method thereof |
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| KR20130076683A (en) | 2013-07-08 |
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