KR101995780B1 - Metamaterial structure with photonic spin hall effect and manufacturing method thereof - Google Patents

Abstract

The present invention provides a semiconductor device comprising: a substrate provided at the bottom; And a functional layer provided on the substrate and provided as a meta surface, wherein the functional layer is provided with a plurality of nano-sized elliptical slits at predetermined intervals, the meta material structure having a photon-spin hole effect .

Description

[0001] METAMATERIAL STRUCTURE WITH PHOTONIC SPIN HALL EFFECT AND MANUFACTURING METHOD THEREOF [0002]

The present invention relates to a meta material structure having a photon-spin-hole effect and a method of manufacturing the same.

Edwin Hall found a Hall Effect that explains how a transverse magnetic field can deflect the flow of electrons as it passes through a metal plate. Hall effect refers to a phenomenon in which an electric field is generated in a direction perpendicular to both a magnetic field and a current when a current flows in a direction perpendicular to the magnetic field when a conductor is placed in the magnetic field.

In recent years, a spin Hall effect (SHE) has been proved in which a phenomenon similar to a Hall effect occurs without a magnetic field for thin semiconductor electrons as disclosed in Non-Patent Document 1.

The spin-hole effect is similar to the Hall effect, but is a phenomenon in which a hole effect is generated by self-induced spin even when there is no external magnetic field, and a phenomenon in which rotating electrons move along a bent path while passing through a semiconductor. This is caused by the interaction between the physical motion of the electron and the spin.

Light traveling through the metal may also exhibit such spin-hole effects, i.e., photonic SHEs. It can be understood that the photon spin-hole effect is simply a path of light divided by the spin of incident light. However, since the spin angular momentum and the spin-orbit interaction of the photon are very small, the photon spin-hole effect is very weak.

Conventionally, experiments have been repeated to obtain a cumulative signal or to observe the photon spin-Hall effect by using highly sophisticated quantum measurements. However, such conventional methods have repeatedly performed experiments to obtain a photon spin- There was a difficulty in using the measurement.

Non-Patent Document 1: X. Yin, Z. Ye, J. Rho, Y. Wang, and X. Zhang, Science 339, 1405 (2013)

It is an object of the present invention to provide a meta material structure capable of obtaining a photon spin-hole effect and a method of manufacturing the same.

A meta-material structure having a photon-spin-hole effect according to an embodiment of the present invention includes: a substrate provided at the bottom; And a functional layer provided on the substrate and provided as a meta surface, the functional layer having an elliptical slit, may be provided.

Further, the functional layer may be silver (Ag), and the substrate may be silicon dioxide (SiO2).

In addition, the elliptical slit is divided by an inner ellipse and an outer ellipse, and the inner ellipse and the outer ellipse may be elongated in the same direction from any one center.

In addition, the inner ellipse may have a distance from the center to the nearest point in the range of 23 to 63 nm, and a distance to the farthest point in the range of 66 to 106 nm.

In addition, the inner ellipse may have a distance from the center to the nearest point of 43 nm, and the distance to the farthest point may be 86 nm.

The nearest point of the outer ellipse from the center is located on an extension line of the line connecting the center and the closest point of the inner ellipse, and the farthest point of the outer ellipse from the center is the center The distance between the nearest point of the outer ellipse from the center and the nearest point of the inner ellipse is 10 to 70 nm and the distance from the center to the farthest point of the outer ellipse The distance from the center to the farthest point of the inner ellipse may be between 50 and 110 nm.

The distance between the nearest point of the outer ellipse and the nearest point of the inner ellipse from the center is 50 nm and the distance from the center to the farthest point of the outer ellipse and from the center to the farthest point of the inner ellipse May be 100 nm.

Also, the elliptical slit may be provided in such a form that the width of the slit is gradually widened while being directed away from a portion closer to the center.

The depth of the elliptical slit may be the same as the thickness of the functional layer.

Further, the substrate may be formed of one of silicon dioxide, silicon, and calcium fluoride, and the functional layer may be formed of one of gold and silver.

A meta-material structure having a photon-spin-hole effect according to an embodiment of the present invention includes a substrate; And a functional layer stacked on the substrate and provided as a meta surface, the functional layer having a plurality of elliptical slits, may be provided.

Also, the plurality of elliptical slits may be arranged at predetermined intervals.

,

)에 위치되고,

는 ±700 내지 770nm이고,

는 ±700 내지 770nm일 수 있다.Further, the elliptical slit closest to any one of the elliptical slits is a relative coordinate in the x, y coordinate system (

,

, ≪ / RTI >

Is within a range of 700 to 770 nm,

May be in the range of 700 to 770 nm.

는 ±740nm이고,

는 ±740nm일 수 있다.Also,

Is ± 740 nm,

May be +/- 740nm.

에 따라서 도출되고,

,

는 어느 하나의 상기 타원형 슬릿에 대한 다른 타원형 슬릿의 상대 위치일 수 있다.Also, the period of the elliptical slit is expressed by the equation

Lt; / RTI >

,

May be a relative position of another elliptical slit with respect to any one of the elliptical slits.

<90 및 180<

<270에서 기하학적 전하(m)가 0보다 크고, 반경이 축소되는 90<

<180 및 270<

<360에서 기하학적 전하(m)가 0보다 작은 이중으로 축퇴된 기하학적 전하를 가질 수 있다.Also, the elliptical slit has a radius of 0 <

&Lt; 90 and 180 &

At <270, the geometric charge (m) is greater than 0 and the radius is reduced to 90 <

&Lt; 180 and 270 &

At < 360, the geometric charge (m) may have a double degenerated geometric charge less than zero.

Also, the geometrical charge (m) can be -1 when the +45 [deg.] Linear polarization is illuminated and the geometrical charge (m) can be -1 when the -45 [deg.] Linear polarization is illuminated.

According to an embodiment of the present invention, there is provided a method of manufacturing a meta-material structure having a photon-spin-hole effect, the method comprising: providing a bottom substrate; Stacking a functional layer having a meta surface on the substrate; And forming an elliptical slit in the functional layer. The present invention also provides a method of manufacturing a meta-material structure having a photon spin-hole effect.

Further, the substrate is silicon dioxide, the functional layer is silver, and the functional layer can be laminated on the substrate by an electron beam evaporator.

Also, the elliptical slit may be formed on the functional layer by a focused ion beam milling process.

According to the meta-material structure according to the embodiments of the present invention, a photon spin-hole effect can be obtained.

Further, there is an advantage of having a photon spin Hall effect regardless of the presence or absence of the angular momentum of the orbit.

1 is a perspective view and a plan view of a meta-material structure according to an embodiment of the present invention.
FIG. 2 is a diagram showing simulation results of an LSP mode in which linear polarization is illuminated in the meta-material structure of FIG. 1; FIG.
FIG. 3 is a diagram showing a simulation result of an LSP mode in which circular polarized light is illuminated in the meta-material structure of FIG. 1; FIG.
FIG. 4 is a diagram showing the results of a two-dimensional design of the meta-material structure of FIG. 1 and a simulation result of a photon-spin Hall effect.
FIG. 5 is a view showing an SEM image of an experimental sample of the meta-material structure of FIG. 1, a configuration of an elliptical slit, and an optical path for measuring a photon-spin Hall effect.
6 is a view showing an image of the CCD 2 of FIG.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a perspective view and a plan view of a meta-material structure according to one embodiment of the present invention.

1, a meta-material structure 100 having a photon-spin-hole effect according to the present invention includes a substrate 110 provided at the bottom and a functional layer (not shown) provided on the meta- 120).

In this embodiment, Metamaterial is a new artificial material including both electric and magnetic elements, and has a negative refractive index to realize negative refraction. At this time, negative refraction refers to a phenomenon in which light is refracted in the same direction as incident light based on a normal line when the light is refracted. The metamaterial has such a negative refractive index that light refraction occurs in the opposite direction to the normal material. In this embodiment, the substrate 110 and the functional layer 120 function as a meta material.

The substrate 110 is provided at the bottom of the metamaterial structure 100 and supports the functional layer 120. The substrate 110 is formed of silicon dioxide (SiO ₂ ).

In addition, a functional layer 120 having a meta surface may be provided on the substrate 110. Here, the functional layer 120 may be formed of silver (Ag). An elliptical slit 121 may be formed on the functional layer 120, and a detailed description related thereto will be given later.

In the embodiment of the present invention, the substrate 110 and the functional layer 120 are formed of silicon dioxide and silver, respectively, but the present invention is not limited thereto. For example, the substrate 110 may be formed of a material such as silicon dioxide, silicon, calcium fluoride, etc., and the functional layer 120 may be a material capable of exciting a surface plasmon in a visible light. .

The meta surface is a functional thin film formed by arranging nanostructures smaller than the wavelength of the working light. Each nanostructure can serve as an antenna for controlling the characteristics of light such as wavelength, wavefront, phase, and amplitude of light. At this time, the size of the metal nanostructures constituting the meta surface may be several nanometers to several hundred nanometers, and the thickness and arrangement of the nanostructures may vary. Such a meta surface is generally manufactured through an electron beam lithography process, but the production method of the meta surface is not limited thereto.

At this time, the functional layer 120 may be a meta surface except for a hyperbolic meta surface showing a hyperbolic type dispersion. Here, the hyperbolic meta surface is an anisotropic material defined differently from a general plasmonic metal, and has a different sign of permittivity in each direction. The reason why the hyperbolic meta surface is excluded from the functional layer 120 is that since the dispersion relation characteristic of the hyperbolic meta surface is defined differently from the general plasmonic metal, the dielectric constant is different in the following Drew model It is because. Therefore, it is difficult to use the hyperbolic meta surface for the photonic spinshole effect structure based on surface plasmonic properties.

로 모델링 되는 드루드(drude) 모델일 수 있으며, 고주파 유전율(

)가 6.0이고, 플라즈마 주파수(

)가

이며, 충돌 빈도(

)가

일 수 있다. The functional layer 120 provided on the meta surface of the silver material

And may be a drude model modeled as a high frequency dielectric constant (

) Is 6.0, and the plasma frequency (

)end

, And the frequency of collision (

)end

Lt; / RTI &gt;

In addition, the functional layer 120 may be provided with a predetermined thickness. For example, the functional layer 120 may have a thickness of 60 nm to 70 nm, preferably 65 nm. At this time, the functional layer 120 may be deposited on the substrate 110 through an electron beam evaporator or sputter.

)위에 65nm 두께를 갖는 은 박막을 증착한 후, 작은 면적에 정교한 형태로 패터닝하는데 효과적인 집속 이온빔 밀링(Focused Ion Beam milling) 공정을 통해 타원형의 슬릿이 구현될 수 있다. 그러나, 타원형 슬릿(121)의 형성 방법은 이에 한정되지 않는다. 예를 들어, 전자빔 리소그래피(Electron Beam Lithography) 공정을 통해 negative tone resist 위에 타원형의 슬릿 모양을 형성한 후 은 박막을 증착하고, 리프트 오프(Lift-off) 공정을 통해 구현될 수 있다.Referring to FIG. 1, an elliptical slit 121 may be formed in the uppermost functional layer 120 of the meta-material structure 100. The elliptical slits 121 are provided in an elliptical shape and may be formed in a nano unit size and may be provided in a uniform array in the functional layer 120. At this time, the elliptical slits 121 are formed on the silica substrate

), A elliptical slit can be realized through a focused ion beam milling process, which is effective for depositing a silver thin film having a thickness of 65 nm and then patterning the thin film in a precise shape on a small area. However, the method of forming the elliptical slit 121 is not limited thereto. For example, an elliptical slit shape may be formed on a negative tone resist through an electron beam lithography process, a silver thin film may be deposited, and a lift-off process may be performed.

Specifically, the elliptical slit 121 can be partitioned by the inner ellipse of the elliptical shape and the outer ellipse. Here, the inner ellipse and the outer ellipse extend in the same direction from the center of either one. In addition, the inner ellipse can be formed such that the nearest point to the center falls by a (in the direction of the x-axis in the drawing) and the farthest point is distanced by b (y-axis in the figure). Here, a may be 23 to 63 nm, preferably 43 nm, and b may be 66 to 106 nm, preferably 86 nm.

In addition, the outer oval of the elliptical slit 121 may be separated by a distance g1 from the point closest to the center of the point of the inner ellipse, such that the point nearest to the center of the inner ellipse is distant by a distance g2 from the point b. That is, the nearest point of the outer ellipse from the center is located on the extension line of the line connecting the center and the nearest point of the inner ellipse, and the farthest point of the outer ellipse from the center is the extension line of the line connecting the center and the farthest point of the inner ellipse Lt; / RTI &gt; In other words, g1 means the distance between the nearest point of the outer ellipse from the center and the nearest point of the inner ellipse from the center, g2 means the distance between the farthest point of the outer ellipse from the center and the farthest point of the inner ellipse from the center It can mean distance. Here, g1 may be 10 to 70 nm, preferably 50 nm, and g2 may be 50 to 110 nm, preferably 100 nm. In this case, the surface plasmon can be excited at the most efficient part of the laser light source used in the measurement experiment. At this time, if the ratio of the short axis to the long axis is kept constant while maintaining the elliptical shape even if the dimension of the ellipse is slightly changed, the surface plasmons similar to the desirable design may be excited, but the wavelength range of the excited surface plasmon is slightly changed.

Further, the elliptical slit 121 can be formed so that the width of the slit becomes gradually wider as it goes from the x-axis direction to the y-axis direction, that is, toward the portion far from the center. That is, the width of the elliptical slit 121 may be 50 nm to 100 nm. The results described in this embodiment are measured results when a = 43 nm, b = 86 nm, g1 = 50 nm and g2 = 100 nm, respectively.

Here, the functional layer 120 is a meta material, and the depth of the elliptical slit 121 may be equal to the thickness of the thin film, that is, the functional layer 120.

In this embodiment, the elliptical slit 121 is provided on the functional layer 120 in an angular shape. However, the elliptical slit 121 is not limited thereto. For example, the elliptical slit 121 may be provided in the form of a boss on the functional layer 120, and the bell-shaped elliptical slit 121 may have the same optical characteristics as the bell-shaped elliptical slit 121 and the Babinet principle can do.

However, when the elliptical slit 121 is designed in a negative shape as in the present embodiment, the manufacturing process can be made easier.

에 의해 정의된 아르키메데스의 와선에 대한 기하학적 전하(geometrical charge, m)는 0이 아니다. 이때, 기하학적 전하는 외부에서 입사되는 빛으로 인해 구조 내부에서 발생하는 전하로서 소정의 구조적인 기하학적 특성을 갖는 것을 의미한다.From the point of view of phase photons,

The geometrical charge (m) for the arc of the Archimedes defined by In this case, the geometric charge means that the charge generated inside the structure due to the light incident from the outside has a predetermined structural geometrical characteristic.

은 방위각

에서의 반경일 수 있다. 아르키메데스의 와선이란 중심으로부터의 거리가 회전각에 비례하여 커지는 소용돌이와 같은 곡선을 의미한다. 구체적으로, 나선형 반지름이 0에서

로 증가하는 방위각(

)에 대해서 반경을 1만큼 늘리면 m=1인 기하학적 전하 구조를 얻을 수 있고, 반대로, 나선형 반경이 축소되면 m=-1인 기하학적 전하 구조를 얻을 수 있다. 본 실시예에서의 타원형 슬릿(121)은 반경이 커지는 0<

<90 및 180<

<270에서 기하학적 전하(m)가 0보다 클 수 있고, 반경이 축소되는 90<

<180 및 270<

<360에서 기하학적 전하(m)가 0보다 작을 수 있다. 즉, 메타물질 구조체(100)는 이중으로 축퇴된 독특한 기하학적 전하를 가질 수 있다.

The azimuth angle

Lt; / RTI &gt; The Archimedes warship means a vortex-like curve in which the distance from the center increases in proportion to the angle of rotation. Specifically, if the spiral radius is 0

Increasing azimuth (

), A geometric charge structure with m = 1 can be obtained by increasing the radius by 1, and a geometric charge structure with m = -1 can be obtained when the spiral radius is reduced. The elliptical slit 121 in this embodiment has a radius of 0 <

&Lt; 90 and 180 &

At <270, the geometric charge (m) can be greater than 0, and the radius is reduced to 90 <

&Lt; 180 and 270 &

At &lt; 360, the geometric charge (m) may be less than zero. That is, the meta-material structure 100 may have a doubly degenerated unique geometric charge.

Specifically, the meta-material structure 100 can propagate incident light in the z direction. Since the meta-material structure 100 includes an nano-sized elliptical slit 121, the meta-material structure 100 may be an anisotropic material. In this case, the meta- (Surface Plasmon, SP) resonance can occur. Surface plasmon (SP) resonance refers to the propagation phenomenon of a surface plasmon polariton (SPP) generated by combining photons and electrons having a specific wavelength on the surface of or near a conductive material. This SP resonance is generally a collective vibration phenomenon of conduction band electrons propagating along the interface between a metal having a negative dielectric function and a medium having a positive dielectric function, and has a higher intensity than an incident electromagnetic wave, And has a characteristic of exponential decay which exponentially decreases as the distance increases. At this time, the SP resonance generated in the nano-sized metal structure is called Localized Surface Plasmon (LSP).

In this embodiment, the LSP mode is understood as an SP resonance state generated in the functional layer 120 of the meta material structure 100 when specific light is irradiated to the meta material structure 100.

FIG. 2 is a diagram showing simulation results of an LSP mode in which linear polarization is illuminated in the meta-material structure of FIG. 1; FIG.

Referring to FIG. 2, the phase advance simulation result of the elliptical slit 121 illuminated with linearly polarized light of a predetermined angle in the LSP mode can be seen. At this time, the predetermined polarization angle may be + 45 ° or -45 °, the free space wavelength may be 1064 nm, and the spin () may be zero.

2 (a), 2 (c), and 2 (e) show the phase progression when the +45-degree linearly polarized light is illuminated, &Lt; / RTI &gt; shows the phase advance when the linearly polarized light is illuminated.

Referring to FIG. 2 (a), it can be seen that the + 45 ° linear polarized light is illuminated on the meta-material structure 100. Referring to FIG. 2 (c) ), That is, the phase charge is +1 in the clockwise direction. It can be seen that the geometrical charge m of the meta-material structure 100 illuminated with the +45-degree linearly polarized light is +1 because the phase charge 1 is the sum of the geometrical charge m and the spin? have. Conversely, referring to (b), it can be seen that -45 ° linear polarization is illuminated in the meta-material structure 100, and (d) That is, the phase charge is -1 in the counterclockwise direction. Thus, it can be seen that the geometrical charge m of the meta-material structure 100 illuminated with -45 [deg.] Linear polarization is -1. That is, the elliptical slit 121 interacts with the elliptical slit 121 through the geometric charge m having a +45 占 linear polarization of +1 and the geometric charge m with the -45 占 linear polarization of -1 It can be seen that the degeneration of the geometrical charge is different depending on the linear polarization direction of the incident light.

 FIG. 3 is a diagram showing a simulation result of an LSP mode in which circular polarized light is illuminated in the meta-material structure of FIG. 1; FIG.

Referring to FIG. 3, the phase advance simulation result of the elliptical slit 121 illuminated with the circularly polarized light having different spin directions in the LSP mode can be seen. At this time, the free space wavelength may be 1064 nm and the orbital angular momentum may be zero.

를 갖는 원형 편광은 ±90 °의 위상 지연을 갖는 초기 +45°및 -45°선형 편광된 빛의 중첩으로 간주될 수 있다. 여기서,

은 오른쪽 원형 편광(RCP)이고,

은 왼쪽 원형 편광(LCP)일 수 있다. Specifically,

Can be regarded as an overlap of the initial + 45 ° and -45 ° linearly polarized light with a phase delay of ± 90 °. here,

Is right circularly polarized light (RCP)

May be left circularly polarized light (LCP).

Fig. 3 (a) shows the electric field in the left circularly polarized light, and Fig. 3 (b) shows the electric field in the right circularly polarized light. 3 (a) and 3 (b), the meta-material structure 100 illuminated with the left circularly polarized light has a local field spot parallel to the + 45 ° direction, and the right circularly polarized light is illuminated It can be seen that the meta-material structure 100 has a local field spot parallel to the -45 [deg.] Direction. Thus, the meta-material structure 100 may exhibit a specific resonance mode at LCP incidence or RCP incidence through the elliptical slit 121, which is a meta-surface. That is, a resonance mode with different geometrical charges is caused by LCP incidence or RCP incidence, so that the light path is divided according to the incident light spins (for example, LCP / RCP). In other words, when LCP is incident, a current or surface plasmon in the direction of 45 degrees is generated, and when RCP is incident, the surface plasmon is generated in the direction of -45 degrees. As a result, a photonic SHE may appear in a spin-controlled SP resonance mode, which is an orthogonally localized region.

FIG. 4 is a diagram showing the results of a two-dimensional design of the meta-material structure of FIG. 1 and a simulation result of a photon-spin Hall effect.

에 따라 선택될 수 있으며,

및

는 700nm 내지는 770nm일 수 있으며, 바람직하게는 740nm일 수 있다. 여기서,

,

는 어느 하나의 타원형 슬릿(121)을 기준으로 할 때 그와 가장 가까운 타원형 슬릿(121)의 x, y 좌표계에서의 상대 좌표일 수 있으며, 일 예로,

,

는 각각 ±740nm일 수 있다. 이와 같이 피치(pitch)를 일정하게 함으로써, 각각의 타원형 슬릿(121)에서 발생하는 표면 플라스몬이 주변의 표면 플라스몬과 상호작용(interaction)하면서 45도 방향 또는 -45도 방향에 위치한 그레이팅(grating) 부근까지 전파(propagation)할 수 있다.4 (a) and 4 (b), when nano-sized elliptical slits 121 are arranged in a predetermined periodic array in the functional layer 120, the SPP at the interface between the air and the substrate 110 Can be propagated in two orthogonal trajectories in accordance with illumination in a circularly polarized state. Therefore, spin-hole phenomenon can be realized in the functional layer 120 having nano-sized elliptical slits 121 due to spin-orbit optical interaction. In this embodiment, the period of the elliptical slit 121 is

, &Lt; / RTI &gt;

And

May be 700 nm to 770 nm, and may be preferably 740 nm. here,

,

May be a relative coordinate in the x, y coordinate system of the elliptical slit 121 closest to the one elliptical slit 121 as a reference. For example,

,

Respectively, may be +/- 740nm. By making the pitch constant, the surface plasmons generated in the respective elliptical slits 121 interact with the surrounding surface plasmons, and gratings positioned in the 45 ° direction or the -45 ° direction ) To the vicinity of the antenna.

FIG. 4 (c) is a diagram showing a photon spin-hole effect according to LCP incidence, and FIG. 4 (d) is a diagram showing a photon spin-hole effect according to RCP incidence.

Referring to FIG. 4C, in the case of LCP incidence, the LSP mode having no orbital angular momentum is excited in a state of being locally squeezed in the + 45 ° direction from the elliptical slit 121, so that only the trajectory in the + And the propagation in the -45 direction may not proceed. On the other hand, referring to (d), in the RCP incidence, the local field can be squeezed in the -45 direction by the spin controlled SP mode, and the SPP is moved along the trajectory in the -45 direction Can be propagated.

FIG. 5 is a view showing an SEM image of an experimental sample of the meta-material structure of FIG. 1, a configuration of an elliptical slit and an optical path for measuring a photon-spin Hall effect, and FIG. 6 is a view showing an image of a CCD 2 of FIG.

=40±30nm,

=80 ±30nm 및

=720nm일 수 있다. Referring to FIGS. 5 and 6, an experimental sample of the meta-material structure 100 may be fabricated using focused ion beam (FIB) milling on the functional layer 120. 5 (a) is an image obtained by observing the functional layer 120 of the meta-material structure 100 with a scanning electron microscope (SEM) at a scale of 40 μm, and FIG. 5 (b) It is an image showing on a scale of 5μm. At this time, the experimental sample of the meta-material structure 100 has a = 43 ± 20 nm, b = 86 ± 20 nm,

= 40 ± 30 nm,

= 80 ± 30 nm and

= 720 nm.

FIG. 5C shows a light path for measuring the photon-spin Hall effect, in which a white light source can be used as a reference beam to adjust the optical path and CCD1 identifies the location of a sample of the meta-material structure 100 Can be used. Further, a continuous wave laser with a narrow line width of 1064 nm may be used as the light source. At this time, the LCP and the RCP can be generated by the linear polarizer LP and the wave plate (QWP) irradiated to the substrate surface of the sample, and the SPP at the interface between the air and the functional layer 120 can be propagated to the diffraction grating. Such a radio wave can be imaged on the CCD 2.

Specifically, when the axis of the wave plate QWP is rotated while maintaining the direction of the linear polarizer LP in the y axis direction, the RCP or LCP polarized state of the incident light can be obtained by changing the angle θ of the wave plate QWP to + -45 °. According to the experimental results, the lattice in the + 45 ° direction can emit light corresponding to the simulation results of the LCP when the QWP angle is -35 ° to -40 ° (see FIG. 6 (a)), Can emit light corresponding to the simulation result of RCP when the QWP angle is + 35 ° to + 40 °.

According to one embodiment of the present invention, the meta-material structure 100 includes the functional layer 120, which is a meta-surface, so that a photon-spin hole effect can be obtained. At this time, since the nano-sized elliptical slit 121 is formed in the functional layer 120 to have a double geometrically degenerated unique geometrical charge, a photon spin Hall effect can be obtained in the LSP mode in which linear polarized light propagates without spin , The photon spin Hall effect can be obtained even in the LSP mode in which the circular orbital angular momentum is not propagated.

The metamaterial structure 100 capable of obtaining such a photon spin-hole effect can be used in various potential applications such as a spin control beam splitter, a router, and a directional photon device that divides light according to the spin of light have. It can also be used as a key optical component in the field of flat optics.

Although the meta-material structure having the photon-spin-hole effect and the meta-surface thereof according to the embodiment of the present invention have been described above as specific embodiments, the present invention is not limited thereto, and the present invention is not limited thereto. It should be interpreted that it has the broadest range according to. Skilled artisans may implement the pattern of features that have not been explicitly described in combination, substitution of the disclosed embodiments, but which, too, do not depart from the scope of the present invention. It will be apparent to those skilled in the art that various changes and modifications may be readily made without departing from the spirit and scope of the invention as defined by the appended claims.

100: meta-material structure
110: substrate 120: functional layer
121: Oval slit

Claims (20)

A substrate provided at the lowest portion; And
A functional layer provided on the substrate and provided with a meta surface, the functional layer having an elliptical slit,
The elliptical slit has a radius of 0 DEG <

<90 ° and 180 ° <

At < 270 [deg.], The geometric charge (m) is greater than 0 and the radius is reduced to 90 [

&Lt; 180 ° and 270 ° <

At <360 °, the geometric charge (m) has a double-degenerated geometric charge less than zero
A metamaterial structure with a photon spin - hole effect.
The method according to claim 1,
Wherein the functional layer is silver (Ag), the substrate is silicon dioxide (SiO2)
A metamaterial structure with a photon spin - hole effect.
The method according to claim 1,
Wherein the elliptical slit is divided by an inner ellipse and an outer ellipse,
The inner ellipse and the outer ellipse are elongated in the same direction from the center of either one
A metamaterial structure with a photon spin - hole effect.
The method of claim 3,
The inner ellipse may be formed,
The distance from the center to the closest point is in the range of 23 to 63 nm and the distance to the farthest point is in the range of 66 to 106 nm
A metamaterial structure with a photon spin - hole effect.
5. The method of claim 4,
The inner ellipse may be formed,
The distance from the center to the closest point is 43 nm, and the distance to the farthest point is 86 nm
A metamaterial structure with a photon spin - hole effect.
The method according to claim 4 or 5,
The nearest point of the outer ellipse from the center is located on an extension of a line connecting the center and the nearest point of the inner ellipse,
The farthest point of the outer ellipse from the center is located on an extension of a line connecting the center and the farthest point of the inner ellipse,
The distance between the nearest point of the outer ellipse from the center and the nearest point of the inner ellipse from the center is 10 to 70 nm,
The distance between the farthest point of the outer ellipse from the center and the farthest point of the inner ellipse from the center is 50 to 110 nm
A metamaterial structure with a photon spin - hole effect.
The method according to claim 6,
The distance between the nearest point of the outer ellipse from the center and the nearest point of the inner ellipse from the center is 50 nm,
The distance between the farthest point of the outer ellipse from the center and the farthest point of the inner ellipse from the center is 100 nm
A metamaterial structure with a photon spin - hole effect.
The method of claim 3,
The elliptical slit is provided in such a form that the width of the slit is gradually widened while being directed away from the portion closer to the center
A metamaterial structure with a photon spin - hole effect.
The method according to claim 1,
The depth of the elliptical slit is formed to be equal to the thickness of the functional layer
A metamaterial structure with a photon spin - hole effect.
The method according to claim 1,
Wherein the substrate is formed of one of silicon dioxide, silicon, and calcium fluoride,
The functional layer may be formed of one of gold or silver
A metamaterial structure with a photon spin - hole effect.
Board; And
A functional layer stacked on the substrate and provided as a meta surface, the functional layer having a plurality of elliptical slits,
The elliptical slit has a radius of 0 DEG <

<90 ° and 180 ° <

At < 270 [deg.], The geometric charge (m) is greater than 0 and the radius is reduced to 90 [

&Lt; 180 ° and 270 ° <

At <360 °, the geometric charge (m) has a double-degenerated geometric charge less than zero
A metamaterial structure with a photon spin - hole effect.
12. The method of claim 11,
The plurality of elliptical slits are arranged at predetermined intervals
A metamaterial structure with a photon spin - hole effect.
12. The method of claim 11,
The elliptical slit closest to any one of the elliptical slits is a relative coordinate in the x, y coordinate system (

,

, &Lt; / RTI &gt;

Is within a range of 700 to 770 nm,

0.0 &gt; 770nm &lt; / RTI &gt;
A metamaterial structure with a photon spin - hole effect.
14. The method of claim 13,

Is ± 740 nm,

Lt; / RTI &gt;
A metamaterial structure with a photon spin - hole effect.
12. The method of claim 11,
The period of the elliptical slit is expressed by equation

Lt; / RTI &gt;

,

Is a relative position of another elliptical slit with respect to any one of the elliptical slits
A metamaterial structure with a photon spin - hole effect.
delete 12. The method of claim 11,
When the geometrical charge m is +1 when the +45 DEG linear polarization is illuminated and when the geometrical charge m is -1 when the -45 DEG linear polarization is illuminated
A metamaterial structure with a photon spin - hole effect.
Providing a substrate formed at the bottom of the substrate;
Stacking a functional layer having a meta surface on the substrate; And
Forming an elliptical slit in the functional layer,
The elliptical slit has a radius of 0 DEG <

<90 ° and 180 ° <

At < 270 [deg.], The geometric charge (m) is greater than 0 and the radius is reduced to 90 [

&Lt; 180 ° and 270 ° <

At <360 °, the geometric charge (m) has a double-degenerated geometric charge less than zero
Method of manufacturing a metamaterial structure having a photon spin - hole effect.
19. The method of claim 18,
Wherein the substrate is silicon dioxide, the functional layer is silver,
The functional layer is deposited on the substrate by an electron beam evaporator or sputter
Method of manufacturing a metamaterial structure having a photon spin - hole effect.
20. The method of claim 19,
The elliptical slit is formed on the functional layer by a focused ion beam milling process
Method of manufacturing a metamaterial structure having a photon spin - hole effect.

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