KR101993365B9 - 전이금속 칼코젠 화합물의 제조 방법 - Google Patents

전이금속 칼코젠 화합물의 제조 방법

Info

Publication number
KR101993365B9
KR101993365B9 KR1020170151580A KR20170151580A KR101993365B9 KR 101993365 B9 KR101993365 B9 KR 101993365B9 KR 1020170151580 A KR1020170151580 A KR 1020170151580A KR 20170151580 A KR20170151580 A KR 20170151580A KR 101993365 B9 KR101993365 B9 KR 101993365B9
Authority
KR
South Korea
Prior art keywords
transition metal
chalcogen compound
metal chalcogen
manufacturing transition
manufacturing
Prior art date
Application number
KR1020170151580A
Other languages
English (en)
Other versions
KR20190054705A (ko
KR101993365B1 (ko
Inventor
권순용
곽진성
조용수
송승욱
이종훈
이종화
Original Assignee
울산과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 울산과학기술원 filed Critical 울산과학기술원
Priority to KR1020170151580A priority Critical patent/KR101993365B1/ko
Publication of KR20190054705A publication Critical patent/KR20190054705A/ko
Application granted granted Critical
Publication of KR101993365B1 publication Critical patent/KR101993365B1/ko
Publication of KR101993365B9 publication Critical patent/KR101993365B9/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020170151580A 2017-11-14 2017-11-14 전이금속 칼코젠 화합물의 제조 방법 KR101993365B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020170151580A KR101993365B1 (ko) 2017-11-14 2017-11-14 전이금속 칼코젠 화합물의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170151580A KR101993365B1 (ko) 2017-11-14 2017-11-14 전이금속 칼코젠 화합물의 제조 방법

Publications (3)

Publication Number Publication Date
KR20190054705A KR20190054705A (ko) 2019-05-22
KR101993365B1 KR101993365B1 (ko) 2019-06-26
KR101993365B9 true KR101993365B9 (ko) 2023-12-08

Family

ID=66680731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170151580A KR101993365B1 (ko) 2017-11-14 2017-11-14 전이금속 칼코젠 화합물의 제조 방법

Country Status (1)

Country Link
KR (1) KR101993365B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451501B (zh) * 2020-04-03 2021-12-21 季华实验室 一种基于共晶反应的激光增材制造钨零件的制备方法
CN112289988B (zh) * 2020-09-30 2022-05-06 合肥国轩高科动力能源有限公司 一种银掺杂的硅和二碲化钨复合负极材料及其制备方法、应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101360997B1 (ko) * 2012-03-12 2014-02-11 성균관대학교산학협력단 금속 칼코게나이드 박막의 제조 방법
KR101500944B1 (ko) * 2013-03-22 2015-03-10 경희대학교 산학협력단 칼코겐 화합물의 2차원 대면적 성장 방법, cmos형 구조체의 제조 방법, 칼코겐 화합물의 막, 칼코겐 화합물의 막을 포함하는 전자 소자 및 cmos형 구조체
KR101464173B1 (ko) 2013-07-23 2014-11-21 영남대학교 산학협력단 전이금속 칼코겐화합물 박막 형성 방법
US10079144B2 (en) * 2015-04-22 2018-09-18 Samsung Electronics Co., Ltd. Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer
KR20160127885A (ko) 2015-04-27 2016-11-07 전자부품연구원 층상 구조의 2차원 물질의 반응성 증가방법 및 이를 이용한 산화그래핀 제조방법
KR101766545B1 (ko) * 2015-12-18 2017-08-09 경희대학교 산학협력단 전이금속 칼코겐 화합물 및 그 제조방법
JP6660203B2 (ja) 2016-02-19 2020-03-11 国立大学法人東北大学 遷移金属ダイカルコゲナイドの合成方法

Also Published As

Publication number Publication date
KR20190054705A (ko) 2019-05-22
KR101993365B1 (ko) 2019-06-26

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E701 Decision to grant or registration of patent right
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G170 Re-publication after modification of scope of protection [patent]