KR101986434B1 - Transparent luminous body, inorganic light emmiting device and organic light emmiting device - Google Patents

Abstract

The present invention relates to a transparent light emitting body, an inorganic light emitting element, and an organic light emitting element. According to an embodiment of the present invention, a transparent light emitting body comprises: a retroreflective electrode layer; and a transmissive electroluminescent layer disposed on the retroreflective electrode layer. Meanwhile, the retroreflective electrode layer includes a retroreflective structure portion which is a structure for retroreflecting a light source, and a reflecting portion for increasing the reflectance of the light source. The transmissive electroluminescent layer includes a light emitting member for emitting light and a functional member for controlling the electron injection efficiency of the light emitting member.

Description

TECHNICAL FIELD [0001] The present invention relates to a transparent light emitting element, an inorganic light emitting element, and an organic light emitting element,

The present invention relates to a transparent light emitting element, an inorganic light emitting element, and an organic light emitting element.

The light emitting device can be classified into an inorganic light emitting device and an organic light emitting device, depending on the light emitting layer material. Maximization of utilization efficiency of light can reduce the cost of the light emitting device and can expand the field of use. The material contributing to light emission of the inorganic light emitting element may include an inorganic material. As the light emitting layer material of the inorganic light emitting element, oxides of various metals, selenides, tellurides and the like can be used. In the case of an organic light emitting device, additional functional materials including a light emitting material may be formed of an organic material. As technology has been developed, the hybridization of organic materials has been accelerated, and technologies for introducing inorganic functional layers into organic materials or introducing organic functional layers into inorganic light emitting materials have been developed.

Various research and development for improving the efficiency and lifetime of such a light emitting device have been carried out. However, it has been found that a light emitting device capable of being manufactured through a simple process while having an excellent efficiency, a long life, Necessity is still required.

Korean Patent Publication No. 10-2007-009742 Korean Patent Publication No. 10-2017-0018417

An object of the present invention is to provide an inorganic light emitting element and an organic light emitting element which can manufacture a transparent light emitting element having a retroreflective characteristic with high efficiency electroluminescence characteristics and has a retroreflective property.

An object of the present invention is to provide an inorganic light emitting element and an organic light emitting element having a retroreflective property, which can produce a transparent light emitting element having a high efficiency of electroluminescent light emitting characteristics, or an organic hybrid element.

A transparent light emitter according to an embodiment of the present invention includes a retroreflective electrode layer; And a transmissive electroluminescent layer disposed on the retroreflective electrode layer, wherein the retroreflective electrode layer includes a retroreflective structure part that retroreflects the light source and a reflective part that increases the reflectivity of the light source, Includes a light emitting member that emits light and a functional member that controls the electron injection efficiency of the light emitting member.

The light emitting layer may include 20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member based on 100 parts by weight of the electroluminescent layer.

The light emitting member may include at least one of ZnS, ZnS: Al, ZnS: Cu, ZnS: Mn, ZnS: Mn and Al.

The transmissive electroluminescent layer may further include a high dielectric member.

Also, the light emitting member may include 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member, based on 100 parts by weight of the transmission type electroluminescent layer.

An inorganic light emitting device according to an embodiment of the present invention includes a lower electrode layer; A retroreflective electrode layer disposed on the lower electrode layer; A transmissive electroluminescent layer disposed on the retroreflective electrode layer; And an upper electrode layer disposed on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes a light emitting member for emitting light and a functional member for controlling an electron injection efficiency of the light emitting member.

A method of manufacturing an inorganic light emitting device according to an embodiment of the present invention includes: preparing a lower electrode layer; Disposing a retroreflective electrode layer on the lower electrode layer; Disposing a transmissive electroluminescent layer on the retroreflective electrode layer; And disposing an upper electrode layer on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes a light emitting member for emitting light and a functional member for controlling an electron injection efficiency of the light emitting member.

An organic light emitting device according to an embodiment of the present invention includes a lower electrode layer; A retroreflective electrode layer disposed on the lower electrode layer; A transmissive electroluminescent layer disposed on the retroreflective electrode layer; And an upper electrode layer disposed on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes an organic light emitting member that emits light and a functional member that controls an electron injection efficiency of the light emitting member, An electron transport layer disposed on one side of the layer made of the member, an electron injection layer injecting electrons into the electron transport layer, a hole transport layer disposed on the other side of the layer made of the light emitting member and the functional member, and a hole injection layer injecting holes into the hole transport layer And a hole injection layer.

A method of manufacturing an organic light emitting diode according to an embodiment of the present invention includes: preparing a lower electrode layer; Disposing a retroreflective electrode layer on the lower electrode layer; Disposing a transmissive electroluminescent layer on the retroreflective electrode layer; And disposing an upper electrode layer on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes an organic light emitting member emitting light and a functional member controlling an electron injection efficiency of the light emitting member, An electron transport layer disposed on one side of the layer made of the member, an electron injection layer injecting electrons into the electron transport layer, a hole transport layer disposed on the other side of the layer made of the light emitting member and the functional member, and a hole injection layer injecting holes into the hole transport layer And a hole injection layer.

The transparent light emitting device, the inorganic light emitting device, and the organic light emitting device according to the embodiment of the present invention can provide a flexible and stretchable light emitting device having a high luminance by the recursive reflection function, and particularly improve the brightness characteristic. Further, a highly efficient light emitting device can be manufactured by a simple method, and the manufacturing cost can be reduced. Further, the transparent light emitting element, the inorganic light emitting element, and the organic light emitting element according to the embodiment of the present invention are applicable to various fields.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a laminated structure of transparent luminous bodies according to an embodiment of the present invention. Fig.
2A shows a prismatic and wavy-pattern retroreflective structure of a transparent light emitter according to an embodiment of the present invention.
FIG. 2B shows that a light source incident on a transparent light emitter having a prismatic retroreflective structure according to an embodiment of the present invention is retroreflected.
3A shows a laminated structure of an inorganic light emitting device according to an embodiment of the present invention.
Fig. 3b shows a structural view of an inorganic light emitting device according to an embodiment of the present invention.
4 is a scanning electron micrograph of a cross section of an inorganic light emitting device according to an embodiment of the present invention.
5 is a flowchart of a method of manufacturing an inorganic light emitting device according to an embodiment of the present invention.
6 illustrates a laminated structure of an organic light emitting device according to an embodiment of the present invention.
7 illustrates a method of manufacturing an organic light emitting device according to an embodiment of the present invention.
FIG. 8A is a photograph of the inorganic light emitting element prepared in Comparative Example 1. FIG.
8B is a photograph taken when the inorganic light emitting element prepared in Comparative Example 1 emits blue light.
FIG. 9A is an optical photograph showing the weight ratio of the light emitting member to the functional member of the inorganic light emitting device prepared according to Comparative Examples 1 to 8. FIG.
FIG. 9B is a graph of luminance versus voltage according to the weight ratio of the light emitting member to the functional member of the light emitting device prepared in Comparative Examples 1 to 8. FIG.
FIG. 9C is a graph of luminance and transmittance versus voltage according to the weight ratio of the light emitting member to the functional member of the inorganic light emitting device prepared by Examples 1 to 8 and Comparative Examples 1 to 8. FIG.
9D shows the reflectance of the transmissive electroluminescent layer according to the weight ratio of the light emitting member to the functional member of the inorganic light emitting device prepared by Comparative Example 1 and Comparative Example 8 and the open structure of the light emitting device prepared by Comparative Example 1 and Comparative Example 8, Fig.
Fig. 10 shows the luminance versus applied voltage of the inorganic light-emitting device prepared in Comparative Example 7 and Comparative Examples 9 to 14. Fig.
Fig. 11 shows dielectric constants of the transmission type electroluminescent layer of the inorganic light emitting device prepared in Comparative Example 7 and Comparative Example 14. Fig.
12A shows the luminance versus applied voltage of the inorganic light-emitting device prepared in Example 14, Comparative Example 14 and Comparative Example 15. Fig.
12B is a graph showing the brightness of the inorganic light-emitting devices prepared in Example 14, Comparative Example 14, and Comparative Example 15. FIG.
12C is a photograph of the light emission of the inorganic luminescent element prepared in Example 14. Fig.
13A shows a digital photograph and a SEM photograph of a bent state of a lower electrode layer and a retroreflective electrode layer of an inorganic light emitting device prepared in Example 15. Fig.
13B is a photograph of a warped state of the inorganic luminescent element prepared according to Example 15. Fig.
13C is a photograph of the light emission of the inorganic light emitting element prepared in Example 15 in a warped state.
14A is a photograph of light emission in the initial state of the bending test of the inorganic light emitting device prepared in Example 15. Fig.
Fig. 14B is a photograph of light emission of the inorganic light emitting device prepared in Example 15 in a bending test bending state. Fig.
14C shows a change in luminance with respect to voltage application in accordance with repetition of the bending cycle of the inorganic light emitting device prepared in Example 15. Fig.
FIG. 14D shows the luminance change according to the bending curvature applied to the inorganic light emitting device prepared in Example 15. FIG.
15A is a comparison chart of light emission angles of inorganic light-emitting devices prepared by Example 14, Comparative Example 14 and Comparative Example 15. Fig.
15B is a schematic diagram of an apparatus for measuring the light emission angle of the inorganic light emitting element.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements. In the drawings, like reference numerals are used throughout the drawings. In addition, " including " an element throughout the specification does not exclude other elements unless specifically stated to the contrary.

Transparent luminous body

1 shows a laminated structure of a transparent light emitting device 1000 according to an embodiment of the present invention.

Referring to FIG. 1, a transparent light emitting device 1000 according to an embodiment of the present invention includes a retroreflective electrode layer 1100; And a transmissive electroluminescent layer (1200) disposed on the retroreflective electrode layer, wherein the retroreflective electrode layer includes a retroreflective structure part for retroreflecting the light source and a reflective part for increasing the reflectance of the light source, The transmissive electroluminescent layer includes a light emitting member for emitting light and a functional member for controlling the electron injection efficiency of the light emitting member.

The retroreflective electrode layer may include a retroreflective structure portion that retroreflects the light source, and a reflector portion that enhances the reflectance of the light source.

2A shows a prismatic and wavy-pattern retroreflective structure of a transparent light emitter according to an embodiment of the present invention.

2A, the retroreflective structure may include at least one of a prism shape, a wavy pattern shape, and a hemispherical shape. However, the shape of the retroreflective structure may be a shape of a retroreflective structure, have. The retroreflective structure may include a concavo-convex portion extending in one direction, a concavo-convex portion having at least a partially protruded structure, or a concavo portion extending in one direction and having at least a partially recessed structure. In addition, the retroreflective structure may be formed in a shape in which the valleys and the ridges are repeated, and the height difference between the valleys and ridges may be adjusted according to the thickness of the transmissive electroluminescent layer, the size of the light emitting member, and the like.

In addition, when a plurality of light sources electroluminesced by the light emitting member or a plurality of light sources by different sources are incident on the retroreflective electrode layer, the light sources may be retroreflected in the direction of the individually incident light sources, .

FIG. 2B shows that a light source incident on a transparent light emitter having a prismatic retroreflective structure according to an embodiment of the present invention is retroreflected.

Referring to FIG. 2B, when a plurality of light sources electroluminesced by the light emitting member or a plurality of light sources by different sources are incident on the retroreflective electrode layer, the light sources may be retroreflected in the direction of the individually incident light sources, The brightness can be increased.

The reflector may comprise at least one of gold, silver, platinum, copper, palladium or aluminum, preferably silver. The material of the reflective portion can be used without limitation as long as the material has high reflectivity. The reflector may be disposed on the retroreflective structure to increase the reflectivity of the light source. More preferably, the lower electrode layer of the material having a high conductivity and a high reflectance is constituted by a retroreflective structure.

The transmissive electroluminescent layer may include a light emitting member and a functional member.

The light emitting member may include at least one of a light emitting material of the inorganic light emitting element or a light emitting material of the organic light emitting element. The functional member may function to efficiently inject electrons into the light emitting member, and may be a functional member. The transmissive electroluminescent layer may have a laminated structure of a light emitting member and a functional member, but may not be particularly limited in the order of lamination.

The light emitting member may include at least one of ZnS, ZnS: Al, ZnS: Cu, ZnS: Mn, ZnS: Mn and Al.

The functional member may comprise at least one of 2-hyroxyethyl acrylate (HEA, Sigma Aldrich), PHOTOMER ™ 6008 (IGM Resins) or Darocur 4265 (Ciba) There is no particular limitation, and a commercially available transparent functional member can be used.

The light emitting layer may include 20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member based on 100 parts by weight of the electroluminescent layer.

When the weight of the light emitting member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the transparent light emitting member according to the embodiment of the present invention may be low. If it exceeds 80, the transparency of the transparent luminous body according to the embodiment of the present invention may deteriorate.

When the weight of the functional member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transparency of the transparent luminescent material according to the embodiment of the present invention is lowered. If the ratio is more than 80, there may be a problem that the brightness of the transparent light emitting body according to the embodiment of the present invention is low and the transmittance is low.

The transparent light emitting body according to an embodiment of the present invention may further include a high dielectric member in the transmissive electroluminescent layer.

The high dielectric material can increase the local electric field around the light emitting member of the transmissive electroluminescent layer, thereby increasing the light emitting property of the light emitting member. The high dielectric material may be BSTO, and may be used without limitation as long as it is a material capable of increasing the dielectric constant and brightness of the transmissive electroluminescent layer.

The light emitting member may include 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member with respect to 100 parts by weight of the transmissive electroluminescent layer.

If the weight of the light emitting member is less than 67 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the transparent light emitting member according to the embodiment of the present invention may be low. 73, there may be a problem that the transmittance of the transparent luminous body according to the embodiment of the present invention is lowered.

If the weight ratio of the high-dielectric material to the transmissive electroluminescent layer is less than 7, the brightness of the transparent light emitting material according to the embodiment of the present invention may be low, and if 100 parts by weight of the transmissive electroluminescent layer, If the weight part exceeds 13, there may be a problem that the transparency of the transparent luminous body according to the embodiment of the present invention is deteriorated.

If the weight of the functional member is less than 17 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transparency of the transparent luminous body according to the embodiment of the present invention is lowered. If the value is more than 23, there may be a problem that the brightness of the transparent light emitting body according to the embodiment of the present invention is low, and the transmittance may be low.

Inorganic light emitting element

3A shows a laminated structure of an inorganic light emitting device 2000 according to an embodiment of the present invention.

3B shows a structural view of an inorganic light emitting device 2000 according to an embodiment of the present invention.

4 is a scanning electron micrograph of a cross section of an inorganic light emitting device 2000 according to an embodiment of the present invention.

3A, 3B and 4, an inorganic light emitting device 2000 according to an embodiment of the present invention includes a lower electrode layer 2400; A retroreflective electrode layer 2200 disposed on the lower electrode layer 2400; A transmissive electroluminescent layer 2100 disposed on the retroreflective electrode layer 2200; And an upper electrode layer 2300 disposed on the transmissive electroluminescent layer 2100. The transmissive electroluminescent layer 2100 includes a light emitting member 2110 emitting light and a function of controlling electron injection efficiency of the light emitting member 2100. [ Member 2120 as shown in FIG.

The lower electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without any particular limitation.

The inorganic light emitting device according to an embodiment of the present invention may further include a substrate on which the lower electrode layer may be disposed. The substrate may be a glass substrate, a wall surface, a skin, or a fiber to which the inorganic light emitting device is attached, but is not particularly limited and various substrates may be used.

The retroreflective electrode layer may include a retroreflective structure portion that retroreflects the light source, and a reflector portion that enhances the reflectance of the light source.

The retroreflective structure may include at least one of a prism shape, a wavy pattern shape, and a hemispherical shape. However, the shape of the retroreflective structure may be used without limitation as long as the structure has a retroreflective function. The retroreflective structure may include a concavo-convex portion extending in one direction, a concavo-convex portion having at least a partially protruded structure, or a concavo portion extending in one direction and having at least a partially recessed structure. In addition, the retroreflective structure may be formed in a shape in which the valleys and the ridges are repeated, and the height difference between the valleys and ridges may be adjusted according to the thickness of the transmissive electroluminescent layer, the size of the light emitting member, and the like.

In addition, when a plurality of light sources electroluminesced by the light emitting member or a plurality of light sources by different sources are incident on the retroreflective electrode layer, the light sources may be retroreflected in the direction of the individually incident light sources, .

The reflector may comprise at least one of gold, silver, platinum, copper, palladium or aluminum, preferably silver. The material of the reflective portion can be used without limitation as long as the material has high reflectivity. The reflector may be disposed on the retroreflective structure to increase the reflectivity of the light source. More preferably, the lower electrode layer of the material having a high conductivity and a high reflectance is constituted by a retroreflective structure.

The transmissive electroluminescent layer may include a light emitting member and a functional member.

The light emitting member may include at least one of ZnS, ZnS: Al, ZnS: Cu, ZnS: Mn, ZnS: Mn and Al.

The functional member may comprise at least one of 2-hyroxyethyl acrylate (HEA, Sigma Aldrich), PHOTOMER 占 6008 (IGM Resins) or Darocur 4265 (Ciba) A transparent functional member can be used without being particularly limited thereto.

The light emitting layer may include 20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member based on 100 parts by weight of the electroluminescent layer.

When the weight of the light emitting member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the inorganic light emitting device according to the embodiment of the present invention may be low. If the amount exceeds 80, the transmittance of the inorganic light emitting device according to the embodiment of the present invention may be deteriorated.

When the weight of the functional member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transmittance of the inorganic light emitting device according to the embodiment of the present invention is lowered. If the weight ratio exceeds 80, the inorganic light emitting device according to the embodiment of the present invention may have a low luminance and may have a problem of lowering the transmittance.

The upper electrode layer may be disposed on the transmissive electroluminescent layer.

The upper electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without particular limitation.

The inorganic light emitting device according to an embodiment of the present invention may further include a high dielectric member in the transmissive electroluminescent layer.

The high dielectric material can increase the local electric field around the light emitting member of the transmissive electroluminescent layer, thereby increasing the light emitting property of the light emitting member. The high dielectric material may be BSTO, and may be used without limitation as long as it is a material capable of increasing the dielectric constant and brightness of the transmissive electroluminescent layer.

The light emitting member may include 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member with respect to 100 parts by weight of the transmissive electroluminescent layer.

When the weight of the light emitting member is less than 67 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the inorganic light emitting device according to the embodiment of the present invention may be low. If the addition amount exceeds 73, the transmittance of the inorganic light emitting device according to the embodiment of the present invention may be deteriorated.

If the weight ratio of the high-dielectric material to the transmissive electroluminescent layer is less than 7, the brightness of the inorganic light-emitting device according to the embodiment of the present invention may be low. In addition, If the weight of the ash exceeds 13, there may be a problem that the transmittance of the inorganic light emitting device according to the embodiment of the present invention is lowered.

If the weight of the functional member is less than 17 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transmittance of the inorganic light emitting device according to the embodiment of the present invention is lowered. If the weight ratio exceeds 23, there may be a problem that the brightness of the inorganic light emitting device according to the embodiment of the present invention is low and the transmittance is low.

Method of manufacturing inorganic light emitting device

5 is a flowchart of a method of manufacturing an inorganic light emitting device according to an embodiment of the present invention.

Referring to FIG. 5, a method of manufacturing an inorganic light emitting device according to an embodiment of the present invention includes: preparing a lower electrode layer; Disposing a retroreflective electrode layer on the lower electrode layer; Disposing a transmissive electroluminescent layer on the retroreflective electrode layer; And disposing an upper electrode layer on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes a light emitting member for emitting light and a functional member for controlling an electron injection efficiency of the light emitting member.

First, the step of preparing the lower electrode layer will be described.

The lower electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without any particular limitation.

The method of manufacturing an inorganic light emitting device according to an embodiment of the present invention may further include disposing the lower electrode layer on a substrate. The substrate may be a glass substrate, a wall, a skin, or a fiber to which the light emitting device is attached, but is not particularly limited and various substrates may be used.

Next, the step of disposing the retroreflective electrode layer on the lower electrode layer will be described.

The retroreflective electrode layer may include a retroreflective structure portion that retroreflects the light source, and a reflector portion that enhances the reflectance of the light source.

The retroreflective structure may include at least one of a prism shape, a wavy pattern shape, and a hemispherical shape. However, the shape of the retroreflective structure may be used without limitation as long as the structure has a retroreflective function. The retroreflective structure may include a concavo-convex portion extending in one direction, a concavo-convex portion having at least a partially protruded structure, or a concavo portion extending in one direction and having at least a partially recessed structure. In addition, the retroreflective structure may be formed in a shape in which the valleys and the ridges are repeated, and the height difference between the valleys and ridges may be adjusted according to the thickness of the transmissive electroluminescent layer, the size of the light emitting member, and the like.

The reflector may comprise at least one of gold, silver, platinum, copper, palladium or aluminum, preferably silver. The material of the reflective portion can be used without limitation as long as the material has high reflectivity. The reflector may be disposed on the retroreflective structure to increase the reflectivity of the light source.

Next, the step of disposing the transmissive electroluminescent layer on the retroreflective electrode layer will be described.

The transmissive electroluminescent layer may include a light emitting member for emitting light and a functional member for controlling the electron injection efficiency of the light emitting member. In addition, the functional member may function to efficiently inject electrons into the light emitting member, and may be a functional member. The transmissive electroluminescent layer may have a laminated structure of a light emitting member and a functional member, but may not be particularly limited in the order of lamination.

The light emitting member may include at least one of ZnS, ZnS: Al, ZnS: Cu, ZnS: Mn, ZnS: Mn and Al.

The functional member may comprise at least one of 2-hyroxyethyl acrylate (HEA, Sigma Aldrich), PHOTOMER 占 6008 (IGM Resins) or Darocur 4265 (Ciba) A transparent functional member can be used without being particularly limited thereto.

20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member may be contained relative to 100 parts by weight of the transmissive electroluminescent layer.

If the weight of the light emitting member is less than 20 parts by weight with respect to 100 parts by weight of the transmission electroluminescent layer, the brightness of the inorganic light emitting device may be low. If the weight of the light emitting member exceeds 80 parts by weight of the light emitting electroluminescent layer, There is a possibility that the transmittance of the inorganic light emitting element is decreased.

If the weight of the functional member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transmittance of the inorganic light emitting element is lowered. When the weight of the functional member exceeds 80 parts by weight There may be a problem that the brightness of the inorganic light emitting device is low and the transmittance is low.

Next, the step of disposing the upper electrode layer on the transmissive electroluminescent layer will be described.

The upper electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without particular limitation.

The transmissive electroluminescent layer may further include a high dielectric member.

The high dielectric material may be BSTO, and may be used without limitation as long as it is a material capable of increasing the dielectric constant and brightness of the transmissive electroluminescent layer.

The light emitting member may include 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member with respect to 100 parts by weight of the transmissive electroluminescent layer.

When the weight of the light emitting member is less than 67 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the inorganic light emitting device may be low. When the weight of the light emitting member exceeds 73 parts by weight, There is a possibility that the transmittance of the inorganic light emitting element is decreased.

When the weight ratio of the high dielectric material to the transmissive electroluminescent layer is less than 7, the brightness of the inorganic light emitting device may be low. When the weight ratio of the high dielectric material is more than 13 parts by weight There may be a problem that the transmittance of the inorganic light emitting element is deteriorated.

If the weight of the functional member is less than 17 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transmittance of the inorganic light emitting element is lowered. When the weight of the functional member exceeds 23 parts by weight There may be a problem that the brightness of the inorganic light emitting device is low and the transmittance is low.

Organic light emitting device

FIG. 5 illustrates a stacked structure of organic light emitting devices according to an embodiment of the present invention.

Referring to FIG. 5, an organic light emitting device according to an embodiment of the present invention includes a lower electrode layer; A retroreflective electrode layer disposed on the lower electrode layer; A transmissive electroluminescent layer disposed on the retroreflective electrode layer; And an upper electrode layer disposed on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes an organic light emitting member that emits light and a functional member that controls an electron injection efficiency of the light emitting member, An electron transport layer disposed on one side of the layer made of the member, an electron injection layer injecting electrons into the electron transport layer, a hole transport layer disposed on the other side of the layer made of the light emitting member and the functional member, and a hole injection layer injecting holes into the hole transport layer And a hole injection layer.

The lower electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without any particular limitation.

The organic light emitting device according to an embodiment of the present invention may further include a substrate on which the lower electrode layer may be disposed. The substrate may be a glass substrate, a wall, a skin, or a fiber to which the organic light emitting diode is attached, but various substrates may be used without particular limitation.

The retroreflective electrode layer may include a retroreflective structure portion that retroreflects the light source, and a reflector portion that enhances the reflectance of the light source.

The retroreflective structure may include at least one of a prism shape, a wavy pattern shape, and a hemispherical shape. However, the shape of the retroreflective structure may be used without limitation as long as the structure has a retroreflective function. The retroreflective structure may include a concavo-convex portion extending in one direction, a concavo-convex portion having at least a partially protruded structure, or a concavo portion extending in one direction and having at least a partially recessed structure. In addition, the retroreflective structure may be formed in a shape in which the valleys and the ridges are repeated, and the height difference between the valleys and ridges may be adjusted according to the thickness of the transmissive electroluminescent layer, the size of the light emitting member, and the like.

In addition, when a plurality of light sources electroluminesced by the light emitting member or a plurality of light sources by different sources are incident on the retroreflective electrode layer, the light sources may be retroreflected in the direction of the individually incident light sources, .

The reflector may comprise at least one of gold, silver, platinum, copper, palladium or aluminum, preferably silver. The material of the reflective portion can be used without limitation as long as the material has high reflectivity. The reflector may be disposed on the retroreflective structure to increase the reflectivity of the light source. More preferably, the lower electrode layer of the material having a high conductivity and a high reflectance is constituted by a retroreflective structure.

The transmissive electroluminescent layer may include an organic light emitting member emitting light and a functional member controlling electron injection efficiency of the light emitting member.

The organic light emitting member may be a light emitting member of a commonly used organic light emitting device, and may be used without limitation as a light emitting member of a commercially available organic light emitting device.

The functional member may comprise at least one of 2-hyroxyethyl acrylate (HEA, Sigma Aldrich), PHOTOMER 占 6008 (IGM Resins) or Darocur 4265 (Ciba) A transparent functional member can be used without being particularly limited thereto.

The light emitting layer may include 20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member based on 100 parts by weight of the electroluminescent layer.

If the weight of the light emitting member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the organic light emitting device may be low. If the weight of the light emitting member exceeds 80 parts by weight of the light emitting electroluminescent layer, There is a problem that the transmittance of the organic light emitting device is reduced.

When the weight of the functional member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transmittance of the organic light emitting element is lowered. When the weight of the functional member exceeds 80 parts by weight per 100 parts by weight of the transmissive electroluminescent layer There may be a problem that the luminance of the organic light emitting device is low and the transmittance is low.

The upper electrode layer may be disposed on the transmissive electroluminescent layer.

The upper electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without particular limitation.

The organic light emitting device according to an embodiment of the present invention may further include a high dielectric member in the transmissive electroluminescent layer.

The high dielectric material can increase the local electric field around the light emitting member of the transmissive electroluminescent layer, thereby increasing the light emitting property of the light emitting member. The high dielectric material may be BSTO, and may be used without limitation as long as it is a material capable of increasing the dielectric constant and brightness of the transmissive electroluminescent layer.

The light emitting member may include 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member based on 100 parts by weight of the transmission type electroluminescent layer.

When the weight of the light emitting member is less than 67 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the organic light emitting device may be low. When the weight of the light emitting member exceeds 73 parts by weight, There is a problem that the transmittance of the organic light emitting device is reduced.

If the weight ratio of the high dielectric material to the high dielectric material layer is less than 7 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the organic light emitting device according to the embodiment of the present invention may be low. If the weight of the ash exceeds 13, the transparency of the organic light emitting device may be deteriorated.

If the weight of the functional member is less than 17 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the transmittance of the organic electroluminescent device may be decreased. If the weight of the functional member exceeds 23 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer There may be a problem that the luminance of the organic light emitting device is low and the transmittance is low.

Further, an organic light emitting device according to an embodiment of the present invention includes an electron transporting layer disposed on one surface of a layer made of the organic light emitting member and the functional member, an electron injection layer injecting electrons into the electron transporting layer, A hole transporting layer disposed on the other side of the formed layer, and a hole injection layer injecting holes into the hole transporting layer.

A hole injection layer may be disposed on the lower electrode layer. The conditions required for the material of the hole injection layer are that the hole injection efficiency from the anode is high and the injected holes must be efficiently transported. For this purpose, the ionization potential is small, the transparency to visible light is high, and the stability against holes is excellent.

As the hole injecting material, it is preferable that the highest occupied molecular orbital (HOMO) of the hole injecting material be between the work function of the anode material and the HOMO of the surrounding organic layer. Specific examples of the hole injecting material include metal porphyrine, oligothiophene, arylamine-based organic materials, hexanitrile hexaazatriphenylene, quinacridone-based organic materials, perylene-based organic materials, Anthraquinone, polyaniline and a polythiophene-based conductive polymer, but are not limited thereto.

A hole transport layer may be disposed on the hole injection layer. The hole transport layer transports holes from the hole injection layer to an organic light emitting layer disposed thereon, and has high hole mobility, stability to holes, and electrons. In addition to these general requirements, a material having a glass transition temperature (Tg) of 70 DEG C or more is preferable when heat resistance is required for a device for application to a vehicle body. Materials satisfying such conditions include NPD (or NPB), spiro-arylamine compounds, perylene-arylamine compounds, azacycloheptatriene compounds, bis (diphenylvinylphenyl) anthracene, silicon germanium oxide Compounds, silicone-based arylamine compounds, and the like.

A transmissive electroluminescent layer may be disposed on the hole transport layer. The transmissive electroluminescent layer is a layer in which holes and electrons injected from the positive electrode and the negative electrode are recombined to emit light, and the light emitting material may be a light emitting material of an organic light emitting device that is commonly used.

An electron transporting layer may be disposed on the light emitting layer. Such an electron transporting layer requires a material capable of efficiently injecting electrons with a high electron injection efficiency from a cathode disposed thereon. For this purpose, it is required to be made of a material having high electron affinity, high electron transfer rate and excellent stability against electrons. Specific examples of the electron transporting material satisfying such conditions include an Al complex of 8-hydroxyquinoline; Complexes containing Alq3; Organic radical compounds; Hydroxyflavone-metal complexes, and the like, but are not limited thereto.

An electron injection layer may be disposed on the electron transport layer. The electron injection layer may be a metal complex compound such as Balq, Alq3, Be (bq) 2, Zn (BTZ) 2, Zn (phq) 2, PBD, spiro-PBD, TPBI or Tf-6P, boron compounds, and the like. At this time, the electron injection layer may be formed in a thickness range of 100 ANGSTROM to 300 ANGSTROM.

Method for manufacturing organic light emitting device

7 illustrates a method of manufacturing an organic light emitting device according to an embodiment of the present invention.

Referring to FIG. 7, a method of manufacturing an organic light emitting diode according to an embodiment of the present invention includes: preparing a lower electrode layer; Disposing a retroreflective electrode layer on the lower electrode layer; Disposing a transmissive electroluminescent layer on the retroreflective electrode layer; And disposing an upper electrode layer on the transmissive electroluminescent layer, wherein the transmissive electroluminescent layer includes an organic light emitting member emitting light and a functional member controlling an electron injection efficiency of the light emitting member, An electron transport layer disposed on one side of the layer made of the member, an electron injection layer injecting electrons into the electron transport layer, a hole transport layer disposed on the other side of the layer made of the light emitting member and the functional member, and a hole injection layer injecting holes into the hole transport layer And a hole injection layer.

First, the step of preparing the lower electrode layer will be described.

The lower electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without any particular limitation.

The method of manufacturing an organic light emitting diode according to an embodiment of the present invention may further include disposing the lower electrode layer on a substrate. The substrate may be a glass substrate, a wall, a skin, or a fiber to which the light emitting device is attached, but is not particularly limited and various substrates may be used.

Next, the step of disposing the retroreflective electrode layer on the lower electrode layer will be described.

The retroreflective electrode layer may include a retroreflective structure portion that retroreflects the light source, and a reflector portion that enhances the reflectance of the light source.

The retroreflective structure may include at least one of a prism shape, a wavy pattern shape, and a hemispherical shape. However, the shape of the retroreflective structure may be used without limitation as long as the structure has a retroreflective function. The retroreflective structure may include a concavo-convex portion extending in one direction, a concavo-convex portion having at least a partially protruded structure, or a concavo portion extending in one direction and having at least a partially recessed structure. In addition, the retroreflective structure may be formed in a shape in which the valleys and the ridges are repeated, and the height difference between the valleys and ridges may be adjusted according to the thickness of the transmissive electroluminescent layer, the size of the light emitting member, and the like.

The reflector may comprise at least one of gold, silver, platinum, copper, palladium or aluminum, preferably silver. The material of the reflective portion can be used without limitation as long as the material has high reflectivity. The reflector may be disposed on the retroreflective structure to increase the reflectivity of the light source.

Next, the step of disposing the transmissive electroluminescent layer on the retroreflective electrode layer will be described.

The transmissive electroluminescent layer may include an organic light emitting member emitting light and a functional member controlling electron injection efficiency of the light emitting member. The transmissive electroluminescent layer may have a laminated structure of a light emitting member and a functional member, but may not be particularly limited in the order of lamination.

The organic light emitting member may be a light emitting member of a commonly used organic light emitting device, and may be used without limitation as a light emitting member of a commercially available organic light emitting device.

The functional member may function to efficiently inject electrons into the light emitting member, and may be a binder.

The functional member may comprise at least one of 2-hyroxyethyl acrylate (HEA, Sigma Aldrich), PHOTOMER 占 6008 (IGM Resins) or Darocur 4265 (Ciba) A transparent functional member can be used without being particularly limited thereto.

20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member may be contained relative to 100 parts by weight of the transmissive electroluminescent layer.

If the weight of the light emitting member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the organic light emitting device may be low. If the weight of the light emitting member exceeds 80 parts by weight of the light emitting electroluminescent layer, There is a problem that the transmittance of the organic light emitting device is reduced.

When the weight of the functional member is less than 20 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, there may be a problem that the transmittance of the organic light emitting element is lowered. When the weight of the functional member exceeds 80 parts by weight per 100 parts by weight of the transmissive electroluminescent layer There may be a problem that the luminance of the organic light emitting device is low and the transmittance is low.

Next, the step of disposing the upper electrode layer on the transmissive electroluminescent layer will be described.

The upper electrode layer may include ITO (Indium Tin Oxide), but it may be a transparent conductive material without particular limitation.

The transmissive electroluminescent layer may further include a high dielectric member.

The high dielectric material may be BSTO, and may be used without limitation as long as it is a material capable of increasing the dielectric constant and brightness of the transmissive electroluminescent layer.

The light emitting member may include 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member based on 100 parts by weight of the transmission type electroluminescent layer.

When the weight of the light emitting member is less than 67 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the brightness of the organic light emitting device may be low. When the weight of the light emitting member exceeds 73 parts by weight, There is a problem that the transmittance of the organic light emitting device is reduced.

If the weight ratio of the high dielectric material to the transmissive electroluminescent layer is less than 7, the brightness of the organic light emitting device may be low. If the weight ratio of the high dielectric material is more than 13 parts by weight per 100 parts by weight of the transmissive electroluminescent layer There is a problem that the transmittance of the organic light emitting diode is decreased.

If the weight of the functional member is less than 17 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer, the transmittance of the organic electroluminescent device may be decreased. If the weight of the functional member exceeds 23 parts by weight with respect to 100 parts by weight of the transmissive electroluminescent layer There may be a problem that the luminance of the organic light emitting device is low and the transmittance is low.

Example

Example 1

An ITO electrode layer having a transparent 3 x 10 cm dimension as a lower electrode layer was prepared.

Next, polymethylmethacrylate (PMMA) having a width of 25 mu m and a prismatic pitch of 15 mu m in height and 15 mu m in height and 15 mu m in height extending in one direction was disposed on the lower electrode layer, The acrylate was sequentially ultrasonically cleaned with acetone and alcohol for 15 minutes and dried in air for 15 minutes. Next, the polymethylmethacrylate was placed in an ion beam deposition chamber, the pressure was adjusted to 5 x 10 < ^-7 > Torr, and Ag grains were grown under the conditions of ⁷ kV, 50 mA and room temperature using an ion beam evaporator. , 99.99%, 5 mm) as a precursor for 30 minutes to form a retroreflective electrode layer on the polymethylmethacrylate to a thickness of 200 nm.

Next, a metal ion-doped ZnS (20-30 mu m, Osram Sylvania, GG13) was used as a light emitting member, and 2-hydroxyethyl acrylate (HEA, Sigma Aldrich), PHOTOMER 6008 (IGM Resins) and Darocur 4265 (Ciba) were mixed at a weight ratio of 1: 9 to prepare a paste for forming a transmission type electroluminescent layer, and this paste was prepared by doctor blade method on the retroreflective electrode layer to form a transmission type electroluminescent layer with a thickness of 60 ㎛ and 180 under the conditions of 360nm, 200mV / cm ² UV irradiation was carried out chogan curing.

Next, flexible transparent ITO coated with a polyethylene terephthalate (PET) film was deposited as an upper electrode layer on the transmissive electroluminescent layer.

Example 2

A light emitting device was manufactured through the same preparation procedure as in Example 1 except that the ratio of the light emitting member to the transparent functional member was 2: 8 in preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1 Respectively.

Example 3

A light emitting device was manufactured in the same manner as in Example 1 except that the ratio of the light emitting member to the transparent functional member was 3: 7 at the time of manufacturing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1 Respectively.

Example 4

A light emitting device was manufactured in the same manner as in Example 1 except that the ratio of the light emitting member to the transparent functional member was 4: 6 at the time of manufacturing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1 Respectively.

Example 5

In the same manner as in Example 1 except that the ratio of the light emitting member to the transparent functional member was 5: 5 at the time of manufacturing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1, Respectively.

Example 6

A light emitting device was manufactured through the same preparation process as in Example 1, except that the ratio of the light emitting member to the transparent functional member was 6: 4 in preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1 Respectively.

Example 7

A light emitting device was manufactured through the same preparation procedure as in Example 1, except that the ratio of the light emitting member to the transparent functional member was 7: 3 at the time of manufacturing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1 Respectively.

Example 8

In the same manner as in Example 1 except that the ratio of the light emitting member to the transparent functional member was 8: 2 at the time of manufacturing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 1, Respectively.

Example 9

An ITO electrode layer having a transparent 3 x 10 cm dimension as a lower electrode layer was prepared.

Next, polymethylmethacrylate (PMMA) having a width of 25 mu m and a prismatic pitch of 15 mu m in height and 15 mu m in height and 15 mu m in height extending in one direction was disposed on the lower electrode layer, The acrylate was sequentially ultrasonically cleaned with acetone and alcohol for 15 minutes and dried in air for 15 minutes. Next, the polymethylmethacrylate was placed in an ion beam deposition chamber, the pressure was adjusted to 5 x 10 < ^-7 > Torr, and Ag grains were grown under the conditions of ⁷ kV, 50 mA and room temperature using an ion beam evaporator. , 99.99%, 5 mm) as a precursor for 30 minutes to form a retroreflective electrode layer on the polymethylmethacrylate to a thickness of 200 nm.

Next, the weight ratio of BSTO nanoparticles (~ 20 nm, Sigma Aldrich) and metal ion-doped ZnS (20-30 mu m, Osram Sylvania, GG13) before mixing with the transparent functional member for the fabrication of the high- Was added to the methanol solvent, and the mixture was stirred at room temperature for 1 hour. Next, the agitated light emitting member and BSTO were mixed with a transparent functional member to prepare a high-transmission electroluminescent layer paste so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member was 68: 2: 30, the method to form a transmission type electroluminescent layer with a thickness of 60 ㎛ on the retroreflective electrode layer 180 in the condition of 360nm, 200mV / cm ² UV irradiation was carried out chogan curing.

Next, flexible transparent ITO coated with a polyethylene terephthalate (PET) film was deposited as an upper electrode layer on the transmissive electroluminescent layer.

Example 10

The ratio of the light emitting member to the transparent functional member in the case of preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 9 was adjusted so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member in the transmissive electroluminescent layer was 65: 5:30, a light emitting device was fabricated through the same preparation procedure as in Example 9. [

Example 11

The ratio of the light emitting member to the transparent functional member in the case of preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 9 was adjusted so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member in the transmissive electroluminescent layer was 60: 10:30, the light emitting device was fabricated through the same preparation process as in Example 9. [

Example 12

The ratio of the light emitting member to the transparent functional member in the case of preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 9 was adjusted so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member in the transmissive electroluminescent layer was 78: 2:20, the light emitting device was fabricated through the same preparation procedure as in Example 9. [

Example 13

The ratio of the light emitting member to the transparent functional member in the transparent electroluminescent layer paste for the formation of the transmissive electroluminescent layer paste in Example 9 was adjusted so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member in the transmissive electroluminescent layer was 75: 5:20, a light emitting device was fabricated through the same preparation procedure as in Example 9. [

Example 14

The ratio of the light emitting member to the transparent functional member in the case of preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 9 was adjusted so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member in the transmissive electroluminescent layer was 70: 10: 20, the light emitting device was manufactured through the same preparation process as that of Example 9. [

Example 15

The ratio of the light emitting member to the transparent functional member in the case of preparing the transmissive electroluminescent layer paste for forming the transmissive electroluminescent layer in Example 9 was adjusted so that the weight ratio of the light emitting member, the high dielectric constant member, and the transparent functional member in the transmissive electroluminescent layer was 40: 10:50, a light emitting device was fabricated through the same preparation procedure as in Example 9. [

Comparative Example 1

A light emitting device was fabricated in the same manner as in Example 1 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 2

A light emitting device was fabricated in the same manner as in Example 2 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 3

A light emitting device was fabricated in the same manner as in Example 3 except that the silver thin film was not coated on the polymethyl methacrylate having a prismatic pitch and the subsequent transmission type electroluminescent layer was formed.

Comparative Example 4

A light emitting device was fabricated in the same manner as in Example 4 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 5

A light emitting device was fabricated in the same manner as in Example 5 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 6

A light emitting device was fabricated in the same manner as in Example 6 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 7

A light emitting device was fabricated in the same manner as in Example 7 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 8

A light emitting device was fabricated in the same manner as in Example 9 except that the silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 9

A light emitting device was fabricated in the same manner as in Example 9 except that a silver thin film was not coated on polymethylmethacrylate having a prismatic pitch and a subsequent transmission type electroluminescent layer was formed.

Comparative Example 10

A light emitting device was fabricated in the same manner as in Example 10, except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 11

A light emitting device was fabricated in the same manner as in Example 11, except that the silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch in Example 11 and a subsequent transmission type electroluminescent layer was formed.

Comparative Example 12

A light emitting device was fabricated in the same manner as in Example 12 except that a silver thin film was not coated on polymethyl methacrylate having a prismatic pitch in Example 12 but a subsequent transmission type electroluminescent layer was formed.

Comparative Example 13

A light emitting device was fabricated in the same manner as in Example 13 except that a silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch and the subsequent transmissive electroluminescent layer was formed.

Comparative Example 14

A light emitting device was fabricated in the same manner as in Example 14, except that the silver thin film was not coated on the polymethylmethacrylate having a prismatic pitch in Example 14 but a subsequent transmission type electroluminescent layer was formed.

Comparative Example 15

In Example 14, the same manufacturing process as in Example 8 was performed except that a silver thin film was not coated on polymethyl methacrylate having a prismatic pitch and a silver thin film having a thickness of 200 nm was directly coated on the lower electrode layer (ITO) To prepare a light emitting device.

8A is a photograph of the light emitting device prepared in Comparative Example 1. FIG.

8B is a photograph taken when the light emitting device prepared in Comparative Example 1 emits blue light.

8A and 8B, it can be seen that the light emitting device prepared according to Comparative Example 1 includes 10 parts by weight of the light emitting member with respect to 100 parts by weight of the transmission type electroluminescence layer, and both when not operating and when operating, are transparent , And blue light is emitted during operation.

FIG. 9A is a photograph (Eclipse LV100, Nikon) according to the weight ratio of the footrest member to the functional member of the light emitting device prepared according to Comparative Examples 1 to 8. FIG.

FIG. 9B is a graph of luminance versus voltage according to the weight ratio of the footing material to the functional member of the light emitting device prepared according to Comparative Examples 1 to 8. FIG. The measurement of FIG. 9B was performed while sweeping the peak-to-peak voltage (Vpp) from 0 to 6.7 V at a frequency of 10 kHz.

Referring to FIGS. 9A and 9B, as the weight ratio of the light emitting member increases in the transmissive electroluminescent layer of the light emitting device prepared by Comparative Examples 1 to 8, the brightness of the light emitting device tends to increase.

FIG. 9C is a graph of luminance and transmittance versus voltage according to the weight ratio of the footrest member to the functional member of the light emitting device prepared by Examples 1 to 8 and Comparative Examples 1 to 8. FIG. The measurement of the brightness was measured by sweeping the peak-to-peak voltage (Vpp) from 0 to 6.7 V at a frequency of 10 kHz. The transmittance was measured through a haze meter (NIPPON DENSHOKU), and the transmittance tends to decrease as the proportion of the light emitting member increases as shown in FIG. 9A.

Referring to FIG. 9C, the luminance of the light emitting device prepared in Examples 1 to 8 gradually increases until the weight ratio of the light emitting member in the transmissive electroluminescent layer is 70%, and the weight ratio of the light emitting member in the transmissive electroluminescent layer is And when it exceeds 70%, it tends to decrease. On the other hand, the luminance of the light emitting device prepared according to Comparative Examples 1 to 8 tends to increase as the ratio of the light emitting member increases in the transmissive electroluminescent layer as described above.

9D is a graph showing the reflectivity of the transmissive electroluminescent layer and the open structure of the light emitting device prepared in Comparative Example 1 and Comparative Example 8 according to the weight ratio of the footing material to the functional member of the light emitting device prepared in Comparative Example 1 and Comparative Example 8, Fig.

Referring to FIG. 9D, it can be seen that the reflectance of the light emitting device prepared by Comparative Examples 1 to 7 is more than 100%, which means that the transmissive electric field of the light emitting device prepared in Comparative Examples 1 to 7 The light emitting layer has an open structure and most of the reflected light can pass through the gap between the light emitting member particles of the transmissive electroluminescent layer. In addition, it can be seen that the reflectivity of the light emitting device prepared in Comparative Example 8 is about 30%, which means that the transmissive electroluminescent layer of the light emitting device prepared in Comparative Example 8 has a closed structure and the light emitting member particles of the transmissive electroluminescent layer And reflects at least a part of the light source reflected therebetween.

10 shows luminance versus applied voltage of the light emitting device prepared in Comparative Example 7 and Comparative Examples 9 to 14. FIG. The measurement of FIG. 8 was measured while sweeping the peak-to-peak voltage (Vpp) from 0 to 6.7 V at a frequency of 10 kHz.

Referring to FIG. 10, it can be seen that the light emitting device further includes a high dielectric constant in the transmissive electroluminescent layer, and that the brightness increases, and that the highest brightness is obtained in the light emitting device prepared in Comparative Example 14.

Fig. 11 shows dielectric constants of the transmission type electroluminescent layer of the inorganic light emitting device prepared in Comparative Example 7 and Comparative Example 14. Fig. The dielectric constant was measured by applying an alternating current of 1 V to the lower electrode layer and the upper electrode layer using an LCR meter (3532-50, Hioki) and scanning the frequency from 100 Hz to 1 MHz. Referring to FIG. 11, it can be seen that the dielectric constant is greatly increased from 11.7 to 19.3 by replacing the 10 wt% functional member with BSTO, which is a high dielectric material.

FIG. 12A shows luminance versus applied voltage of the light emitting device prepared in Example 14, Comparative Example 14, and Comparative Example 15. FIG. The measurement of FIG. 12A was performed while sweeping the peak-to-peak voltage (Vpp) from 0 to 6.7 V at a frequency of 10 kHz.

Referring to FIG. 12A, it was confirmed that the brightness was increased by introducing a mirror electrode into the light emitting device prepared in Comparative Example 14, and the brightness was further increased by introducing the retroreflective electrode layer.

12B is a graph showing the brightness of the light emitting device prepared in Example 14, Comparative Example 14, and Comparative Example 15 in comparison. The measurement of FIG. 12B was performed at a peak-to-peak voltage (Vpp) of 6.7 V at a frequency of 10 kHz.

Referring to FIG. 12B, the luminous means prepared according to Example 14 can increase the brightness by 442% by introducing a retroreflective electrode layer and a high-dielectric material as compared with the luminous means prepared by Comparative Example 7, And it was confirmed that it exhibited high luminance.

12C is a photograph of the light emission of the inorganic luminescent element prepared in Example 14. Fig.

Referring to FIG. 12C, the inorganic light-emitting device prepared according to Example 14 has a luminance exceeding 1017 cd / m ² , which is sufficient for use in a flexible and stretchable light-emitting device.

FIG. 13A is a photograph of a lower electrode layer, a retroreflective electrode layer, and a high-resolution scanning electron microscope (HR-FESEM SU8020, Hitach) prepared according to Example 7. FIG.

Referring to FIG. 13A, it can be seen that the lower electrode layer and the retroreflective electrode layer are retained without cracks even in a bent state.

13B is a photograph of a warped state of the inorganic luminescent element prepared according to Example 15. Fig.

13C is a photograph of the light emission of the inorganic light emitting element prepared in Example 15 in a warped state.

13B and 13C, it can be seen that the inorganic light-emitting device prepared according to Example 15 does not generate defects such as cracks even when warped in a state where the device is completed, and emits normal light.

14A is a photograph of light emission in the initial state of the bending test of the inorganic light emitting device prepared in Example 15. Fig.

14B is a photograph of the light emission of the inorganic light emitting device prepared in Example 15 in the bending test bending state.

14C shows a change in luminance with respect to voltage application in accordance with repetition of the bending cycle of the inorganic light emitting device prepared in Example 15. Fig.

14A, 14B, and 14C, it was observed that the inorganic light emitting element in the initial state and the inorganic light emitting element subjected to the bending test in 10 to 500 cycles did not deteriorate in brightness according to the voltage by repetition of the cycle.

FIG. 14D shows the luminance change according to the bending curvature applied to the inorganic light emitting device prepared in Example 15. FIG. The luminance measurement of FIG. 12D was measured at a voltage of 200V.

Referring to FIGS. 14A, 14B, and 14D, as the curvature applied to the light emitting device increases from 0.07 in the plane, the luminance in the initial state tends to increase by about 10%. As a result, the thickness of the transmissive electroluminescent layer becomes thinner and the distance between the upper electrode layer and the lower electrode layer is reduced as the curvature applied to the light emitting device increases.

15A is a comparison chart of light emission angles of the light emitting devices prepared in Example 14, Comparative Example 14 and Comparative Example 15. Fig.

15B is a schematic view of an apparatus for measuring the light emission angle of the light emitting element. The IVL system of FIG. 15B was scanned from -90 degrees to +90 degrees and a halogen lamp source (Fiber Optic Korea, FOK-100W) was used to measure the angle of reflection of retroreflected light It was fixed away.

15A and 15B, it can be seen that the light source which is vertically incident on the light emitting element is diffusely diffused up to an angle of about ± 60 ° in the light emitting device prepared in Comparative Example 14 and Comparative Example 15, It can be seen that the incident light source is reflected within an angle of about +/- 2 DEG. As a result, it was confirmed that the inorganic light emitting device prepared in Example 14 had a retroreflective property.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

1000: transparent luminous body
1100: transmissive electroluminescent layer
1200: retroreflective electrode layer
2000: inorganic light emitting element
2100: transmissive electroluminescent layer
2110: light emitting member 2120: functional member
2200: retroreflective electrode layer
2300: upper electrode layer
2400: lower electrode layer
3000: Organic light emitting device
3100: transmissive electroluminescent layer
3200: Retroreflective electrode layer
3300: upper electrode layer
3400: Lower electrode layer
3500: electron injection layer
3600: electron transport layer
3700: Major transportation layer
3800: Major injection layer

Claims (9)

A retroreflective electrode layer; And
And a transmissive electroluminescent layer disposed on the retroreflective electrode layer,
Wherein the retroreflective electrode layer includes a retroreflective structure part for retroreflecting the light source and a reflective part for increasing the reflectance of the light source,
Wherein the transmissive electroluminescent layer is disposed on the reflective portion and includes a light emitting member for emitting light and a functional member for controlling an electron injection efficiency of the light emitting member,
Wherein the retroreflective structure includes a shape having a retroreflective function,
The reflective portion is formed on the shape of the recursive reflective structural portion to have a shape that has a recursive reflection function, thereby retroreflecting the light source incident from the light emitting member, and the reflective portion is formed of a conductive material, Wherein the transparent luminous body is a transparent luminous body.
The method according to claim 1,
Wherein the transparent luminous body comprises 20 to 80 parts by weight of the light emitting member and 20 to 80 parts by weight of the functional member with respect to 100 parts by weight of the transmissive electroluminescent layer.
The method according to claim 1,
Wherein the light emitting member comprises at least one of ZnS, ZnS: Al, ZnS: Cu, ZnS: Mn, ZnS: Mn and Al.
The method according to claim 1,
Wherein the transmissive electroluminescent layer further comprises a high dielectric member.
The method according to claim 1,
Wherein the transparent luminous body comprises 67 to 73 parts by weight of the light emitting member, 7 to 13 parts by weight of the high dielectric member, and 17 to 23 parts by weight of the functional member with respect to 100 parts by weight of the transmission type electroluminescent layer.
A lower electrode layer;
A retroreflective electrode layer disposed on the lower electrode layer;
A transmissive electroluminescent layer disposed on the retroreflective electrode layer; And
And an upper electrode layer disposed on the transmissive electroluminescent layer,
Wherein the transmissive electroluminescent layer includes a light emitting member for emitting light and a functional member for controlling an electron injection efficiency of the light emitting member,
Wherein the retroreflective electrode layer is in the form of a thin film having a shape that has a reflex reflection function to retroreflect a light source incident from the light emitting member and to function as an electrode formed of a conductive material.
delete A lower electrode layer;
A retroreflective electrode layer disposed on the lower electrode layer;
A transmissive electroluminescent layer disposed on the retroreflective electrode layer; And
And an upper electrode layer disposed on the transmissive electroluminescent layer,
Wherein the transmissive electroluminescent layer includes an organic light emitting member emitting light and a functional member controlling an electron injection efficiency of the light emitting member, wherein the electron transporting layer is disposed on one surface of the layer comprising the light emitting member and the functional member, And a hole injection layer for injecting holes into the hole transport layer, wherein the hole transport layer is formed on the other surface of the layer including the light emitting member and the functional member,
Wherein the retroreflective electrode layer is of a thin film type having a shape of a retroreflective function to retroreflect a light source incident from the light emitting member and to function as an electrode formed of a conductive material.
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