KR101981543B1 - Pressureless sintering method of alumina-silicon carbide composites - Google Patents

Abstract

The invention Al ₂ O ₃ -SiC relates to a pressureless sintering process of the composite, a normal pressure sintering method of example Al ₂ O ₃ -SiC composite material according to the present invention is a slurry by mixing Al2O3 powder, SiC powder and a solvent Preparing; Solidifying the slurry; Molding the solidified slurry and first sintering to produce a first sintered body; Impregnating the first sintered body with a sintering auxiliary agent in a liquid phase; And a second sintering step of sintering the first sintered compact impregnated with the sintering aid at normal pressure.

Description

Technical Field [0001] The present invention relates to a pressureless sintering method of an alumina-silicon carbide composite,

The present invention relates to a pressure-sintering method of an alumina (Al ₂ O ₃ ) -silicon carbide (SiC) composite, and more particularly to a method of sintering at atmospheric pressure at an industrially reasonable temperature by adding a sintering aid in a liquid phase in the form of metal ions The method comprising:

Al ₂ O ₃ -SiC ceramic composite materials have been studied for over 30 years for the purpose of enhancing the physical properties of single-phase Al ₂ O ₃ ceramics by adding SiC having superior rigidity and widening the application range thereof. It is known that even when only a small amount of SiC is added in an amount of about 5 vol%, the strength can be made higher than 1 GPa at normal pressure and the creep resistance at high temperature is also increased up to twice as much. In addition, it is known that SiC has good thermal conductivity and semiconductor properties and can impart new properties to the insulator Al ₂ O ₃ .

The purpose of making composite ceramics by adding SiC to the Al ₂ O ₃ matrix is as follows. First, SiC is added to Al ₂ O ₃ , which is an insulator, to control electrical resistance. Second, SiC phase is added to control the strength and hardness Thereby improving the mechanical properties. The electrical resistance is known to follow the percolation theory, which means that SiC should be added over a certain amount. Therefore, it is necessary to add a large amount of SiC of at least 15 vol%, and when a large amount of SiC is added, the sintering ability is largely lowered, so that the normal pressure sintering process becomes difficult to densify.

In order to solve this problem, expensive methods such as hot-press, spark plasma sintering and hot isostatic press, which are processes for increasing the sintering driving force, have been used. Methods are not economically advantageous because they are a process which lacks economical efficiency.

Despite the existence of various processing methods, most sintering processes only add 5 vol% SiC, and higher temperatures and pressures are required to increase the amount of SiC added.

In EP 0310342 B1, the composite material is compacted using a hot-pressing method at a pressure of 30 MPa. The amount of 20mol% is only 11 vol% in terms of volume and requires a temperature of 1800 ℃ maximum.

CN 1569733 A has densified a composite material containing SiC in the range of 5 to 25 vol% at 1750 to 1850 ° C and 30 to 35 MPa using a hot-press method.

EP 0310342 B1 CN 1569733 A

An object of the present invention is to impregnate the sintering aid comprises a Al ₂ O ₃ -SiC composite material in the liquid, and provides a process for the preparation of high density Al ₂ O ₃ -SiC composite densification only by normal pressure sintering.

The atmospheric pressure sintering method of an Al ₂ O ₃ -SiC composite according to an embodiment of the present invention comprises: preparing a slurry by mixing Al ₂ O ₃ powder, SiC powder and a solvent; Preparing a first sintered body by first sintering the mixed slurry; Impregnating the first sintered body with a sintering auxiliary agent; And a second sintering step of sintering the first sintered body impregnated with the sintering auxiliary to produce a second sintered body.

The step of impregnating the first sintered body with the sintering auxiliary agent may be performed by immersing the sintered auxiliary agent in the dissolved liquid phase solution.

The sintering aid may be at least one of Mg, Y, Ca, and Ti.

In addition, the step of impregnating the first sintered body with the sintering auxiliary agent may be performed for 30 minutes to 12 hours.

The concentration of the sintering auxiliary agent in the liquid solution in which the sintering auxiliary agent is dissolved may be 3000 ppm to 6000 ppm.

Also, the second sintering may be performed at a pressure of 0.9 atm to 1.1 atm.

In addition, the volume ratio of SiC to the total volume of the Al ₂ O ₃ -SiC composite may be 10 to 30%.

The size of the Al ₂ O ₃ powder may be 0.5 μm to 5 μm.

In addition, the size of the SiC powder may be 0.5 탆 to 5 탆.

In addition, in the step of preparing the first sintered body by first sintering the mixed slurry, the first sintering may be performed at a temperature of 800 to 1200 ° C.

Also, in the step of preparing the second sintered body by sintering the first sintered body impregnated with the sintering auxiliary agent, the second sintering may be performed at a temperature of 1500 to 1750 ° C.

Further, in the step of preparing the first sintered body by first sintering the mixed slurry, the slurry may be solidified and granulated before the first sintering.

According to another embodiment of the present invention, there is provided a method of manufacturing a component material for an Al ₂ O ₃ -SiC semiconductor, comprising: preparing a slurry by mixing Al ₂ O ₃ powder, SiC powder and a solvent; Preparing a first sintered body by first sintering the mixed slurry; Impregnating the first sintered body with a sintering auxiliary agent; And a second sintering step of sintering the first sintered body impregnated with the sintering auxiliary to produce a second sintered body.

In the normal pressure sintering method of the Al ₂ O ₃ -SiC composite according to the embodiment of the present invention, Mg and Y, which are sintering additives, are uniformly added, the pressure-sintering temperature can be lowered by 100 ° C or more and the sinterability can be maximized. In addition, the Al ₂ O ₃ -SiC composite produced by the normal pressure sintering method of the Al ₂ O ₃ -SiC composite exhibited excellent mechanical properties even at a low sintering temperature.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart of an embodiment of the present invention for sintering a pressure-sintered Al ₂ O ₃ -SiC composite.
2 shows the relative density of the Al ₂ O ₃ -SiC composite prepared according to Example 1 according to sintering temperature.
3 shows the relative density of the Al ₂ O ₃ -SiC composite prepared according to Comparative Example 1 according to sintering temperature.
4 shows the relative density of the Al ₂ O ₃ -SiC composite prepared according to Comparative Example 2 according to sintering temperature.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements. In the drawings, like reference numerals are used throughout the drawings. In addition, " including " an element throughout the specification does not exclude other elements unless specifically stated to the contrary.

Al ₂ O ₃ -SiC composite Atmospheric pressure  Sintering method

Hereinafter, a pressure-sintering method of an Al ₂ O ₃ -SiC composite according to an embodiment of the present invention will be described.

1 is a flow diagram of a normal pressure sintering method of the Al ₂ O ₃ -SiC composite material according to an embodiment of the present invention.

As shown in Figure 1, Al ₂ O ₃ -SiC composite of the normal pressure sintering method according to the embodiment of the present invention includes a mixture of Al ₂ O ₃ powder, SiC powder and a solvent to prepare slurry; Preparing a first sintered body by first sintering the mixed slurry; Impregnating the first sintered body with a sintering auxiliary agent; And a second sintering step of sintering the first sintered body impregnated with the sintering auxiliary to produce a second sintered body.

The step of impregnating the first sintered body with the sintering auxiliary agent may be performed by immersing the sintered auxiliary agent in the dissolved liquid phase solution.

The liquid solution is not particularly limited and may be used without limitation as long as it can dissolve the sintering auxiliary agent such as Y, Mg and the like.

For example, the liquid solution may be an organic solvent including nitrates, sulphates, water and water such as alcohols, ketones, hydrocarbons, N, N'-dimethylformamide (DMF), N, N-diethylformamide (DEF), N, N-dimethylacetamide (DMAc), acetonitrile, dioxane, chlorobenzene, pyridine, N-methylpyrrolidone (NMP), sulfolane, tetrahydrofuran But are not limited to, lactones, C ₁ -C ₁₂ alkyl amines. Examples of the alcohol include mono- or polyalcohols having 1 to 10 carbon atoms, for example, alicyclic alcohols such as alkylene polyols such as methanol, ethanol, propanol, ethylene glycol and glycerol, and cyclohexanol; Examples of the ketone include ketones having 2 to 10 carbon atoms, such as acetone, methyl ethyl ketone, and acetylacetone; Examples of the hydrocarbon include hydrocarbons having 4 to 20 carbon atoms (e.g., linear and cyclic alkanes having 4 to 10 carbon atoms such as hexane, heptane, octane, and toluene).

Further, a water-miscible solvent which can be mixed with water or a water-soluble solvent which can be dissolved with water can be preferably used as an organic solvent.

In preparing the slurry by mixing Al ₂ O ₃ powder, SiC powder and solvent, the slurry may be mixed with a binder, a lubricant, a plasticizer, a dispersant, and a deflocculant And may further include additives.

The step of forming the solidified slurry and fabricating the first sintered body by first sintering may further include a debinding step of removing the polymer component before the first sintering step.

The degreasing step may be performed at a temperature of at least 500 ° C to remove the polymer component, but is not particularly limited thereto.

The defatting step may be performed by thermoforming in the step of molding the solidified slurry.

The thermoforming can be performed by at least one of uniaxial molding, hydrostatic molding, and warm molding, and the powder can be charged into a certain mold and subjected to a constant pressure.

The thermoforming process may be performed at a temperature of at least 400 < 0 > C.

Polymer materials such as a binder, a lubricant, a plasticizer, a dispersant, and a deflocculant contained in the molded article can be decomposed at a temperature of 400 ° C or higher, If the temperature is lower than 400 ° C, the polymer is not thermally decomposed and the molded body may be destroyed in the subsequent sintering process.

In the step of preparing the first sintered body by first sintering the mixed slurry, the first sintered body may be a porous Al ₂ O ₃ -SiC sintered body. The porous Al ₂ O ₃ -SiC sintered body is impregnated with a liquid can be uniformly impregnated into the Mg ^{2 +} or Y ³⁺ ion to form a porous Al ₂ O ₃ -SiC of a sintered body.

The density of the first sintered body may be at least 60% or less.

If the density of the first sintered body exceeds 60%, Al ₂ O ₃ Nonuniform internal structure may occur due to intergranular sintering.

The sintering aid may be at least one of Y, Mg, Ca or Ti.

The step of impregnating the first sintered body with the sintering auxiliary agent may be performed for 30 minutes to 12 hours.

If the impregnation time is less than 30 minutes, the densification is not sufficient and the density difference between the surface and inside of the sintered body may occur.

If the impregnation step is performed for less than 30 minutes, Mg and Y ions are not sufficiently adsorbed on the first sintered body, and sintering may not be performed uniformly. The impregnation step may be performed for 30 minutes to 12 hours, preferably at least 6 hours or more.

The concentration of the sintering auxiliary agent of the liquid solution in which the sintering auxiliary agent is dissolved may be 3000 ppm to 6000 ppm.

If the amount of the sintering aid in the liquid phase is less than 3000 ppm, complete densification may not be achieved due to insufficient amount of the sintering auxiliary agent, and the effect of the sintering assistant may be reduced or the composite may be broken due to internal unevenness after sintering. If the sintering aid in the liquid phase exceeds 6000 ppm, there is a high possibility that a large amount of liquid phase is generated in the Al ₂ O ₃ -Y ₂ O ₃ matrix, and the mechanical strength may be lowered due to the growth of crystal grains when the liquid phase is generated.

The second sintering may be performed at a pressure of 0.9 atm to 1.1 atm.

The _second pressure sintering process of the Al ₂ O ₃ -SiC composite according to the embodiment of the present invention is performed at an atmospheric pressure of 0.9 atm to 1.1 atm to produce a densified Al ₂ O ₃ -SiC composite having a density of 90% can do.

The volume ratio of SiC to the total volume of the Al ₂ O ₃ -SiC composite material may be 10 to 30%.

The size of the Al ₂ O ₃ powder may be 0.5 to 5 μm.

If it is less than 0.5μm size group of the powders, the sintering property is improved, but the when the price of the powder increases and a disadvantage that the preparation cost increases, the size of the powder exceeds 5 μm sintering property is located high density Al ₂ O ₃ - It is difficult to produce the SiC composite.

The size of the SiC powder may be 0.5 to 5 [mu] m.

If the size of the powder is less than 0.5 mu m, the sintering property is improved, but the cost of the powder is high, which increases the manufacturing cost. If the size of the powder exceeds 5 mu m, There may be a problem of adding a larger amount for controlling the electric resistance.

In the step of preparing the first sintered body by first sintering the mixed slurry, the first sintering may be performed at a temperature of 800 to 1200 ° C.

If the temperature of the first sintering is less than 800 ° C, there is a fear that the sintered body may be destroyed in the subsequent step of impregnating the liquid phase sintering additive. If the temperature exceeds 1200 ° C, relatively large amount of Al ₂ O ₃ sintering due to the inter- Lt; / RTI >

The atmosphere in the first sintering heat treatment may be an inert atmosphere containing at least one of vacuum, Ar and N ₂ , but is not particularly limited.

In the step of sintering the first sintered body impregnated with the sintering auxiliary agent to produce a second sintered body, the second sintering may be performed at a temperature of 1500 to 1750 ° C.

If the temperature of the second sintering is less than 1500 캜, sufficient densification may not be performed, and if it exceeds 1750 캜, the strength may be decreased due to grain growth.

The atmospheric atmosphere during the second sintering heat treatment may be an inert atmosphere containing at least one of vacuum, Ar, and N ₂ , but is not particularly limited.

In the step of preparing the first sintered body by first sintering the mixed slurry, solidification and granulation of the slurry may be performed before the first sintering of the slurry.

In solidifying the slurry, the solidification may be rapidly frozen to maintain a uniformly dispersed state of the prepared slurry, and may be solidified after drying.

In the step of solidifying the slurry, rapid cooling can be performed below the freezing point of the solvent for rapid solidification.

The step of impregnating the first sintered body with the sintering auxiliary in a liquid phase may further include a step of impregnating the first sintered body with liquid and then drying the impregnated body.

Al ₂ O ₃ -SiC Manufacturing method of parts material for semiconductor

According to another embodiment of the present invention, there is provided a method of manufacturing a component material for an Al ₂ O ₃ -SiC semiconductor, comprising: preparing a slurry by mixing Al ₂ O ₃ powder, SiC powder and a solvent; Preparing a first sintered body by first sintering the mixed slurry; Impregnating the first sintered body with a sintering auxiliary agent; And a second sintering step of sintering the first sintered body impregnated with the sintering auxiliary to produce a second sintered body.

The manufacturing method of the component material for the Al ₂ O ₃ -SiC semiconductor includes all of the contents described in the above-described pressure-sintering method of the Al ₂ O ₃ -SiC composite, and is omitted in order to avoid redundant description.

Hereinafter, an atmospheric pressure sintering method of the Al ₂ O ₃ -SiC composite according to the present invention will be described in detail with reference to examples. The following examples are illustrative of the present invention only and are not intended to limit the scope of the present invention.

Example  One

Al ₂ O ₃ Powder (Showa Denko Co., Al160SG3) was used the median value D ₅₀ is 0.67 um level of the sintered body for manufacturing a powder of particle size, a SiC powder (ESK-SiC GmbH, E- SINSIC15) D ₅₀ is the level of powder 0.78um Respectively.

The raw material powder was mixed with tertiary distilled water (18.5 M?). To obtain a stable slurry, 1.5 wt% of a surfactant (NH4PAA, molecular weight 3500, DARVAN 821-A, R.T. Vanderbilt, CT, USA) was added. The mixed slurry was uniformly dispersed using an agitator.

In order to keep the slurry uniformly dispersed, the slurry was rapidly freeze-lyophilized and granulated using a sieving method. The granulated composite ceramic material was subjected to isotropic hydrostatic pressing (CIP) under 200 MPa pressure to prepare a compact. To remove the surfactant, degreasing treatment was performed at 480 ° C. for 5 hours and then sintered at 1200 ° C. for 1 hour.

The first sintered Al ₂ O ₃ -SiC sintered body was vacuum-impregnated with an aqueous nitrate solution containing 4500 ppm of Mg and Y components for 6 hours.

After the vacuum impregnation step, the second sintering was performed at a temperature of 1500 to 1750 ° C for 3 hours.

Figure 2 illustrates the relative density of the Al ₂ O ₃ -SiC composite material prepared by Example 1.

Referring to FIG. 2, the Al ₂ O ₃ -SiC composite produced according to Example 1 had a density value exceeding 98.5% at 1600 ° C. when a relatively small amount of 10 vol% SiC was added, and 20, 30 vol % SiC were added, and the densities exceeded 98% and 95%, respectively, only by 1750 ℃ atmospheric pressure sintering. When the Mg and Y nitrate liquid phase sintering aids were impregnated, it was confirmed that the sinterability was greatly improved.

Example  2

In Example 1, the content of Mg and Y in the sintering aids dissolved in the liquid was adjusted to 1,500 ppm, and the second sintering was carried out for 6 hours at a temperature of 1750 ° C for 3 hours to obtain an Al ₂ O ₃ -SiC ceramic composite .

Example  3

In Example 1, the content of Mg and Y in the sintering aids dissolved in the liquid was adjusted to 3000 ppm, and the second sintering was carried out for 6 hours at a temperature of 1750 ° C for 3 hours to obtain an Al ₂ O ₃ -SiC ceramic composite .

Example  4

In Example 1, the content of Mg and Y in the sintering aids dissolved in the liquid was adjusted to 3000 ppm, the vacuum impregnation time was 30 minutes, the second sintering was carried out at 1750 ° C for 3 hours to obtain Al ₂ O ₃ - SiC ceramic composites were prepared.

Example  5

In Example 1, the content of Mg and Y in the sintering aids dissolved in the liquid was adjusted to 3000 ppm, the vacuum impregnation time was performed for 1 hour and the second sintering was performed at 1750 ° C for 3 hours to obtain Al ₂ O ₃ - SiC ceramic composites were prepared.

Example  6

In Example 1, the content of Mg and Y in the sintering aids dissolved in the liquid was adjusted to 3000 ppm, the vacuum impregnation time was 3 hours, and the second sintering was performed at 1750 ° C for 3 hours to obtain Al ₂ O ₃ - SiC ceramic composites were prepared.

Comparative Example  One

Al ₂ O ₃ -SiC ceramic composites were prepared in the same manner as in Example 1 except that the vacuum impregnation step was not performed in Example 1.

3 shows the relative density of the Al ₂ O ₃ -SiC ceramic composite prepared according to Comparative Example 1 according to sintering temperature.

3, when a relatively small amount of 10 vol.% Of SiC was added, the density was less than 82% at 1750.degree. C. When 20 and 30 vol.% SiC were added, the density was decreased . It is considered that this is caused by the loss of material due to the reaction between Al ₂ O ₃ and SiC or the density drop due to the abnormal grain growth of Al ₂ O ₃ . Since the sinterability of the Al ₂ O ₃ matrix is relatively low, it may be difficult to obtain a density of 85% or more without a sintering aid.

Comparative Example  2

Except that Mg and Y used as a sintering aid were not impregnated in a liquid phase and the same contents were added as MgO and Y ₂ O ₃ powder to prepare a slurry. Al ₂ O ₃ -SiC Ceramic composites were prepared.

4 shows the relative density of the Al ₂ O ₃ -SiC ceramic composite prepared according to Comparative Example 2 according to sintering temperature.

Referring to FIG. 4, when the sintering additive in the form of MgO-Y ₂ O ₃ powder was added, the sinterability was generally improved as compared with Comparative Example 1. However, still high density over 95% was not reached.

The appearance, density, strength, specific resistance and plasma resistance of the Al ₂ O ₃ -SiC composite prepared according to Examples 1 to 3 and Comparative Example 1 were analyzed. Al ₂ O ₃ The characteristics of the SiC specimen are shown in Table 1.

The following density was measured by the ASTM 792 Archimedes measuring method and the strength was measured by the ISO 6872: 2008E biaxial strength measuring method. The following resistivity was measured by the ASTM D 257 method. The plasma resistance was calculated by weight reduction considering the area / density of the specimen after etching for 100 minutes under conditions of RF powder 350W, CF 4 50ccm, O 2 5ccm, Ar 100ccm.

Mg, Y content Psalm state density burglar Resistivity
(Ω · cm) Plasma resistance Example 1
4500ppm normal 99.27% 649 MPa 1.13 X 10 ⁷ 0.230 (etching rate relative to Si) Example 2
1500 ppm Large cracks occur 93.29% Can not be measured by crack Can not be measured by crack Can not be measured by crack Example 3
3000ppm normal 98.43% 617 MPa 1.94 X 10 ⁷ 0.230 (etching rate relative to Si) Comparative Example 1
0 ppm Separated up and down 61.55% Not measurable by destruction Not measurable by destruction Not measurable by destruction

As shown in Table 1, when the sintering additives Mg and Y were respectively added to 1500 ppm of the liquid phase, not enough densification was caused due to insufficient amount of the sintering additive, and the internal and external irregularities of the specimen occurred, The sintered body was destroyed.

On the other hand, when 3000 and 4500 ppm of Mg and Y were added to the liquid phase, a sound sintered body was obtained. In addition, the Al ₂ O ₃ -SiC composite produced by Examples 1 and 3 was confirmed to be a range that can be used as a material for semiconductor process parts as a result of measurement of strength, specific resistance, and plasma plasma characteristics.

Density, strength, resistivity and plasma resistance of the Al ₂ O ₃ -SiC composite prepared by Example 1 and Examples 4 to 6 were analyzed and the Al ₂ O 3 The properties of the _3- SiC specimen are shown in Table 2.

Vacuum Impregnation Time Psalm state density burglar Resistivity
(Ω · cm) Plasma resistance Example 4
30 minutes Difference in internal / external density Total 93.47%, surface part ~ 97%, interior ~ 92% 416 MPa Can not be measured due to low density 0.382 (etching rate relative to Si) Example 5
1 hours normal 97.24% 543 MPa 5.30 X 10 ⁷ 0.278 (etch rate relative to Si) Example 6
3 hours normal 94.82% 570 MPa 4.22 X 10 ⁷ 0.271 (etching rate relative to Si) Example 1
6 hours normal 98.43% 617 MPa 1.94 X 10 ⁷ 0.273 (etching rate relative to Si)

Referring to Table 2, it was confirmed that the densification was not performed properly due to insufficient time in case of vacuum impregnation for 30 minutes, and there was a difference in density between the surface portion and the inside portion. The above results indicate that Mg and Y are less adsorbed on the first sintered body, resulting in a difference in density between the surface and the interior.

In addition, it was confirmed that there was no difference in density between the surface portion and the inside when vacuum impregnation was performed for 1 hour or more. However, it was confirmed that the density gradually increased with the increase of the impregnation time, and it was confirmed that the material can be sufficiently used as a material for semiconductor process parts such as high mechanical strength and low resistivity.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

Claims (11)

Al ₂ O ₃ powder, SiC powder and a solvent to prepare a slurry;
Preparing a first sintered body by first sintering the mixed slurry;
Impregnating the first sintered body with a sintering auxiliary agent; And
And sintering the first sintered body impregnated with the sintering aid to prepare a second sintered body, the method comprising the steps of: preparing a sintered body of Al ₂ O _{3 -}

The step of impregnating the first sintered body with the sintering auxiliary agent is carried out by immersing the first sintered body in the liquid solution in which the sintering auxiliary agent is dissolved; And
Wherein the step of impregnating the first sintered body with the sintering auxiliary agent is performed for more than 30 minutes, and the concentration of the sintering auxiliary agent of the liquid solution in which the sintering auxiliary agent is dissolved is more than 1500 ppm, the pressureless sintering of the Al ₂ O ₃ -SiC composite Way.
delete The method according to claim 1,
The sintering aid is a normal pressure sintering method of Mg, Y, Ca, or Ti of at least one of Al ₂ O ₃ -SiC composite material.
The method according to claim 1,
Step of impregnating a sintering aid to the first sintered under normal pressure sintering method of the Al ₂ O ₃ -SiC composite material is carried out for 1 hour to 12 hours.
The method according to claim 1,
The concentration of the sintering aid in the sintering auxiliary is dissolved in the liquid solution is 3000ppm to 6000ppm of Al ₂ O ₃ -SiC composite of the normal pressure sintering method.
The method according to claim 1,
The second sintering and pressure sintering method of the Al ₂ O ₃ -SiC composite material is carried out at a pressure of 0.9 atm to 1.1 atm.
The method according to claim 1,
The Al ₂ O ₃ -SiC composite material by volume is 10 to 30% of Al ₂ O ₃ -SiC composite of the normal pressure sintering method of the SiC of the total volume.
The method according to claim 1,
Wherein the first sintering is performed at a temperature of 800 to 1200 ° C. The method for sintering atmospheric pressure of an Al ₂ O ₃ -SiC composite according to claim 1, wherein the first sintering is performed at a temperature of 800 to 1200 ° C.
The method according to claim 1,
In the step of the second sintering the first sintered body with the sintering aid it is impregnated producing a second sintered body, and the second sintering and pressure sintering method of the Al ₂ O ₃ -SiC composite material is carried out at 1500 to 1750 ℃ temperature.
The method according to claim 1,
Further comprising the step of solidifying and granulating the slurry prior to the first sintering of the slurry in the step of sintering the mixed slurry by first sintering to form a sintered body of Al ₂ O ₃ -SiC composite .
Al ₂ O ₃ powder, SiC powder and a solvent to prepare a slurry;
Preparing a first sintered body by first sintering the mixed slurry;
Impregnating the first sintered body with a sintering auxiliary agent; And
In the Al ₂ O ₃ -SiC method of manufacturing a semiconductor component material comprising a,; the second sintering the first sintered body is impregnated with the sintering aid to prepare a second sintered body

The step of impregnating the first sintered body with the sintering auxiliary agent is carried out by immersing the first sintered body in the liquid solution in which the sintering auxiliary agent is dissolved; And
Step of impregnating a sintering aid to the first sintered body is carried out for more than 30 minutes, the concentration of the sintering aid in the sintering auxiliary is dissolved in the liquid solution are parts Al ₂ O ₃ -SiC, characterized in that the semiconductor material than 1500ppm ≪ / RTI >

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