KR101980246B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus capable of forming a plasma environment around an object, comprising: a reactor in which a process is performed; A gas supply unit for supplying at least one kind of process gas into the reactor; An object supporting unit on which at least one object is placed and is rotatably installed inside the reactor so that the processing gas can be supplied to the object in a space division manner in accordance with the rotation direction; And an electrode plate installed inside the reactor so as to face an object placed on the object supporting unit and to which plasma power is applied, the electrode plate being disposed such that its longitudinal direction is directed to the rotation axis of the object supporting unit; A second plasma environment, and a third plasma environment are formed on an object placed on the object supporting portion, the first plasma environment, the second plasma environment, and the third plasma environment being formed on the object placed on the object support portion, , A first counterpart, a second counterpart and a third counterpart.

Description

[0001] Substrate processing apparatus [

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of forming a plasma environment around an object.

In general, an atomic layer deposition apparatus for ultra-fine interlayer deposition of an atomic layer thickness on a wafer surface among substrate processing apparatuses can rapidly form a good quality film by alternately performing adsorption and substitution of molecules.

In order to form a plasma environment on an object such as a wafer, a substrate processing apparatus can be applied to a conventional atomic layer deposition apparatus.

However, the conventional substrate processing apparatus has a problem in that the thickness of a film formed on an object such as a wafer is not uniform, because the electromagnetic environment of the center portion of the electrode and the electromagnetic environment of the edge portion of the electrode are different from each other.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems and to provide a plasma processing apparatus and a plasma processing apparatus capable of separately controlling a plasma environment at a center portion and a plasma environment at a rim portion, And an object thereof is to provide a processing apparatus. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a reactor in which a process is performed; A gas supply unit for supplying at least one kind of process gas into the reactor; An object supporting unit on which at least one object is placed and is rotatably installed inside the reactor so that the processing gas can be supplied to the object in a space division manner in accordance with the rotation direction; And an electrode plate installed inside the reactor so as to face an object placed on the object supporting unit and to which plasma power is applied, the electrode plate being disposed such that its longitudinal direction is directed to the rotation axis of the object supporting unit; A second plasma environment, and a third plasma environment are formed on an object placed on the object supporting portion, the first plasma environment, the second plasma environment, and the third plasma environment being formed on the object placed on the object support portion, , A first counterpart, a second counterpart and a third counterpart.

Further, according to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming a lower surface of the second corresponding portion from the object such that a step is formed between the second corresponding portion and the first corresponding portion and / And the height may be higher than the bottom surface height of the first corresponding portion and / or the third corresponding portion from the object.

Further, according to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming a lower surface of the second corresponding portion from the object such that a step is formed between the second corresponding portion and the first corresponding portion and / And the height may be lower than the bottom surface height of the first corresponding portion and / or the third corresponding portion from the object.

According to an aspect of the present invention, the body, the first corresponding portion, the second corresponding portion, and the third corresponding portion are integrally formed, and the first corresponding portion includes a first end The second corresponding portion includes an intermediate portion of the body, and the third corresponding portion includes the other end of the body remote from the rotation axis.

According to an aspect of the present invention, the object is mounted on an object support portion and revolved along a track having a predetermined radius around the rotation axis, and the body may be a fan-shaped plate provided on one side of the track.

According to an aspect of the present invention, a first boundary line is formed between the second corresponding portion and the first corresponding portion, and a second boundary line is formed between the second corresponding portion and the third corresponding portion. have.

According to an aspect of the present invention, the first boundary line and the second boundary line may be different in radius of curvature.

According to an aspect of the present invention, a distance from a portion of the body corresponding to the center axis of the object to the first boundary is longer than a distance from a portion of the body corresponding to the center axis of the object to the second boundary Lt; / RTI >

According to an aspect of the present invention, a first gas hole may be formed in the first corresponding portion and / or a third corresponding portion, and a second gas hole may be formed in the second corresponding portion.

According to an aspect of the present invention, the diameter and / or the arrangement density of the first gas hole and the second gas hole may be different from each other.

Further, according to the idea of the present invention, the corner portion and / or the groove portion between the second corresponding portion and the first corresponding portion and / or the third corresponding portion may be rounded rounded.

According to an aspect of the present invention, side grooves formed concavely from the both side surfaces of the second corresponding portion in the width direction of the body to the inside of the second corresponding portion may be provided.

According to some embodiments of the present invention as described above, the plasma environment formed at the central portion of the object and the plasma environment formed at the rim portion are formed using the first corresponding portion, the second corresponding portion, and the third corresponding portion, So that a uniform film can be formed on the object by precise control. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view showing a substrate processing apparatus according to some embodiments of the present invention.
Fig. 2 is a perspective view showing the electrode plate of Fig. 1;
3 is a cross-sectional view of the electrode plate of Fig. 2 taken along line III-III.
Fig. 4 is an enlarged view of a portion A of the electrode plate of Fig. 3;
5 is an enlarged view according to another example of Fig.
6 is an enlarged view according to still another example of Fig.
7 is a bottom view showing an example of the electrode plate of Fig.
8 is a bottom view showing another example of the electrode plate of Fig.
9 is a cross-sectional view showing an electrode plate according to some other embodiments of the present invention.
10 is a cross-sectional view illustrating an electrode plate according to still another embodiment of the present invention.
11 is a cross-sectional view illustrating an electrode plate according to still another embodiment of the present invention.
12 is a bottom view of an electrode plate in accordance with some further embodiments of the present invention.
FIG. 13 is a cross-sectional view of the electrode plate taken along the line XIII-XIII in FIG. 12. FIG.
Figure 14 is a bottom view of an electrode plate in accordance with some further embodiments of the present invention.
Figure 15 is a bottom view of an electrode plate in accordance with some further embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term " and / or " includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, in the figures the elements are turned over so that the elements depicted as being on the top surface of the other elements are oriented on the bottom surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise " and / or " comprising " when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a cross-sectional view showing a substrate processing apparatus 1000 and an electrode plate 100 according to some embodiments of the present invention. 2 is a perspective view showing the electrode plate 100 shown in Fig. 1, Fig. 3 is a sectional view showing a section III-III of the electrode plate 100 shown in Fig. 2, Fig. 4 is an enlarged view to be.

1 to 4, a substrate processing apparatus 1000 according to some embodiments of the present invention mainly includes a reactor C, a gas supply unit S, an object support unit T, And may include an electrode plate 100.

Here, as shown in FIG. 1, the reactor (C) can form a substrate processing environment therein, and various gates and vacuum lines can be installed.

In addition, the reactor (C) may include various chambers that can be applied to chemical vapor deposition equipment, various deposition equipment, atomic layer deposition equipment, and the like.

1, the gas supply unit S is a device for supplying at least one type of process gas into the reactor C, and various gases such as a source gas, a reactive gas, a purge gas, Or the like.

More specifically, for example, the gas supply unit S may be disposed along a rotation path of the object W, in which a separate source gas supply, a reaction gas supply unit, and a purge gas supply unit are disposed.

1, the gas supplied through the gas supply pipe S1 in another form of the gas supply unit S may be supplied to the gas injection unit S2 using a gas injection plate S2 having a plurality of gas injection holes S3 formed therein A showerhead gas supply unit capable of uniformly dispersing the object W may be provided. Here, the gas injection plate S2 may be provided in a plurality of pieces divided into a fan shape, and the gas injection plate S2 may serve as a kind of electrode for forming a plasma environment. In addition, the gas supply unit S may be applied in various types and types.

The object support unit T may include at least one or more objects W mounted thereon so that the process gas may be supplied to the object W such as a wafer or a substrate in a space- C of the turntable.

1, the electrode plate 100 is installed in the reactor C so as to face an object W placed on the object support T, And may be a metal material or a ceramic material electrode structure to which a plasma power is applied so as to form a plasma environment.

Here, the plasma environment refers to a gaseous state in which the process gas is excited into a positively charged ion state with electrons having a negative charge, and the energy density and the charge separation are considerably high, so that the physical and chemical reaction can be facilitated.

1 and 2, the electrode plate 100 forms an electric field for forming a plasma environment, and includes a body 10, a first corresponding portion 20, A counterpart 30 and a third counterpart 40. [

The body 10 may be disposed so as to face the object W such as a wafer and may be disposed such that its longitudinal direction faces the rotation axis Ta of the object support T. [ For example, as shown in Fig. 1, an object W is mounted on an object support T and revolved along a trajectory having a predetermined radius around a rotation axis Ta, As shown in Fig. More specifically, the body 10 may be in the shape of a fan-shaped plate, and further, as viewed from above, may be generally fan-shaped with rounded corners.

1 to 3, the first corresponding portion 20 and the second corresponding portion 30 and the third corresponding portion 40 are formed in the body 10 along the longitudinal direction of the body 10, (T) of the object support portion (T).

For example, the first counterpart 20 may be installed in a portion of the body 10 closer to the rotation axis Ta so that a first plasma environment E1 may be formed in the object W.

The second counterpart 30 may further include a second counterpart 20 disposed on the body 10 away from the rotation axis Ta such that a second plasma environment E2 is formed on the object W. [ It can be installed in other parts.

The third counterpart 40 may further include a second counterpart 30 that is located farther away from the rotation axis Ta than the second counterpart 30 so that a third plasma environment E3 is formed in the object W. [ It can be installed in another part.

More specifically, for example, as shown in FIGS. 1 to 3, the body 10, the first corresponding portion 20, the second corresponding portion 30, and the third corresponding portion 40 may be integrally formed.

The first corresponding portion 20 includes one end of the body 10 closer to the rotation axis Ta of the body 10 and the second corresponding portion 30 includes the body 10 And the third corresponding portion 40 may include the other end of the body 10 remote from the rotation axis Ta. For example, the body 10 may be formed of a silicon material or a metal material.

3, a step (see FIG. 3) is provided between the second corresponding portion 30 and the first corresponding portion 20 and between the second corresponding portion 30 and the third corresponding portion 40 The lower surface height H1 of the second corresponding portion from the object W may be higher than the lower surface height H2 of the first corresponding portion 20 and the third corresponding portion 40 to form the first corresponding portion 20 and the third corresponding portion 40. [ That is, the electrode plate 100 may have a shape in which the second corresponding portion 30 is recessed relative to the first corresponding portion 20 and the third corresponding portion 40. [ The distance from the second corresponding portion 30 to the object W can be made longer than the distance from the first corresponding portion 20 and the third corresponding portion 40 to the object W. [

The size of the step D1 is determined depending on the kind of the object W, the processing environment, the kind of the process gas, the type of the process gas, and the type of the process gas, so that a film having a uniform thickness can be formed on the object W. It can be optimally designed according to the size and shape.

In the modified example of this embodiment, a step (a) is formed between the second corresponding portion 30 and the first corresponding portion 20 or between the second corresponding portion 30 and the third corresponding portion 40 The lower surface height H1 of the second corresponding portion from the object W may be higher than the lower surface height H2 of the first corresponding portion 20 or the third corresponding portion 40 to form the first corresponding portion 20 or the third corresponding portion 40. [ The distance from the second corresponding portion 30 to the object W can be made longer than the distance from the first corresponding portion 20 or the third corresponding portion 40 to the object W. [

3, a second plasma environment E2 is formed in the central region A1 of the object W of FIG. 8 using the second corresponding portion 30, 7 corresponding to the first plasma environment E1 different from the second plasma environment E2 in the rim area A2 of the object W of FIG. 7 using the first correspondence unit 20 and the third correspondence unit 40, And the third plasma environment E3 may be formed.

3, a second plasma environment E2 formed at the central portion of the object W such as a wafer and the first plasma environment E1 formed at the rim portion and the second plasma environment E2 formed at the rim portion, A uniform film can be formed on the object W by precisely controlling the object E3.

For example, if the lower surface height H1 of the second corresponding portion 30 is higher than the lower surface height H2 of the first corresponding portion 20 and the third corresponding portion 40, The distance from the first corresponding portion 20 and the third corresponding portion 40 to the object W may be longer than the distance from the first corresponding portion 20 and the third corresponding portion 40 to the object W. [ According to this, the plasma density in the second plasma environment E2 can be made lower than the plasma density in the first plasma environment E1 or the third plasma environment E3. Therefore, when the thickness of the central portion corresponding to the second corresponding portion 30 is greater than the edge portion of the object W corresponding to the first corresponding portion 20 and the third corresponding portion 40, The thickness can be made thinner and the thickness can be controlled more thickly at the time of etching.

Therefore, the lower surface height H1 of the second corresponding portion 30 and the lower surface height H2 of the first corresponding portion 20 and the third corresponding portion 40 are adjusted according to the situation, A film of uniform thickness can be formed over the entirety.

4, the second counterpart 30 and the first counterpart 20 and the third counterpart 40 of the electrode plate 100 according to some embodiments of the present invention, The corner portion M1 and the groove M2 may be formed to have a sharp cross-section at right angles.

Fig. 5 is an enlarged view according to another example of Fig. 4, and Fig. 6 is an enlarged view according to still another example of Fig.

The corner portion M3 and the groove portion M2 between the second corresponding portion 30 and the first corresponding portion 20 and the third corresponding portion 40 are rounded rounded, Lt; / RTI > Therefore, it is possible to prevent an arc phenomenon that may occur in the corner portion (M3) and the groove portion (M2).

6, the rounding may be performed only on the corner portion M3 between the second corresponding portion 30 and the first corresponding portion 20 and the third corresponding portion 40. As shown in FIG. Therefore, it is possible to prevent an arc phenomenon that may occur in the corner portion M3.

7 is a bottom view showing an example of the electrode plate of Fig.

7, the boundary line L between the second corresponding portion 30 and the first corresponding portion 20 or between the second corresponding portion 30 and the third corresponding portion 40 is A first boundary line L1 formed on a side closer to the rotation axis Ta of the second corresponding portion 30 and a second boundary line L1 formed on a side farther from the rotation axis Ta of the second corresponding portion 30, And a boundary line L2.

The first distance N1 from the portion of the body 10 corresponding to the center axis WC of the object W to the second boundary line L2 and the first distance N1 from the center axis WC of the object W The second distance N2 from the portion of the body 10 corresponding to the first boundary line L1 to the first boundary line L1 may be different from each other. For example, as illustrated in FIG. 7, the first distance N1 may be less than the second distance N2. That is, the distance from the center axis WC of the object W to the first boundary line L1 may be longer than the distance from the center axis WC of the object W to the second boundary line L2.

For example, the second distance N2 may be larger in the range of 2 to 4 times than the first distance N1.

Here, the center axis may be an axis that passes through the center of gravity of the object W or the center of the outer shape and is perpendicular to one surface of the object W.

For example, when the object W is a wafer, the center axis of the wafer may mean an axis that passes through the center of gravity of the wafer or the center of the outer circle of the wafer, which is an outer appearance, and is perpendicular to the upper and lower surfaces of the wafer.

Therefore, when the object W is rotated along the trajectory, the second plasma environment E2 formed at the central portion of the object W tends to deviate toward the outside of the object support portion T by the centrifugal force You can compensate.

The boundary line L shown in FIG. 7 is not limited to that shown in FIG. 7, and the first distance N1 and the second distance N2 are equal to each other or the first distance N1 is equal to the second distance N2 May be greater than the distance N2.

Figs. 8, 10 and 11 are bottom views showing other examples of the electrode plate of Fig. 7;

The boundary line L1 between the second counterpart 30 and the first counterpart 20 and between the second counterpart 30 and the third counterpart 40 L2 may be straight lines, respectively. Therefore, it is easy to process the second corresponding portion 30, the first corresponding portion 20, the second corresponding portion 30, and the third corresponding portion 40.

Here, the dotted line portion indicates the trajectories passing through the center region A1 and the edge region A2 of the object W, and the cross mark indicates the center axis WC of the object W.

10, the boundary line L3 between the second corresponding portion 30 and the first corresponding portion 20 and between the second corresponding portion 30 and the third corresponding portion 40 may be L3 ) L4 may be a curve having the same radius of curvature r1 as the locus of Fig. Therefore, the boundary region between the second corresponding portion 30, the first corresponding portion 20, the second corresponding portion 30, and the third corresponding portion 40 can be accurately matched with the locus .

11, the boundary between the second corresponding portion 30 and the first corresponding portion 20 and between the second corresponding portion 30 and the third corresponding portion 40 may be L5 ) L6 may be different from the curvature radii r2 and r3 of the locus and different from the curvature radius r1 of the locus.

Therefore, the plasma environment E1, E2, and E3 can be continuously controlled by further reducing the stepped region toward the center region of the second corresponding portion 30. [

9 is a cross-sectional view illustrating an electrode plate 200 according to some alternative embodiments of the present invention.

9, the substrate processing apparatus 200 according to some other embodiments of the present invention may include the second corresponding portion 30, the first corresponding portion 20, and the second corresponding portion The bottom surface height H3 of the second corresponding portion 30 is set to be greater than the bottom surface height H3 of the first corresponding portion 20 and the third corresponding portion 40 (H4) of the lower surface of the lower surface

9, a second plasma environment E2 is formed in the central region A1 of the object W of FIG. 8 using the second corresponding portion 30, 7 corresponding to the first plasma environment E1 different from the second plasma environment E2 in the rim area A2 of the object W of Fig. 7 using the first correspondence unit 20 and the third correspondence unit 40, And the second plasma environment E2 may be formed.

3, a second plasma environment E2 formed at a central portion of the object W such as a wafer, a first plasma environment E1 formed at a rim portion, and a third plasma environment E3 Can be precisely controlled to form a uniform film on the object W.

For example, if the lower surface height H1 of the second corresponding portion 30 is lower than the lower surface height H2 of the first corresponding portion 20 and the third corresponding portion 40, The second plasma environment E2 formed at the central portion of the object W can be strengthened so that the thickness of the central portion of the object W can be made thinner or thicker and the first plasma The environment E1 or the third plasma environment E3 may be weakened so that the thickness of the edge portion of the object W may be increased or decreased.

Therefore, the lower surface height H1 of the second corresponding portion 30 and the lower surface height H2 of the first corresponding portion 20 and the third corresponding portion 40 are adjusted according to the situation, A film of uniform thickness can be formed over the entirety.

FIG. 12 is a bottom view showing an electrode plate 700 according to still another embodiment of the present invention, and FIG. 13 is a sectional view taken along line XIII-XIII of the electrode plate 700 of FIG.

12 and 13, side grooves G1 and G2 having a curvature r4 (r5) may be provided on one side or both sides of the second corresponding portion 30. In this case,

The side grooves G1 and G2 may be formed in a second plasma environment E2 formed at the central portion of the object W such as a wafer and a first plasma environment E1 formed at a rim portion, A uniform film can be formed on the object W by precisely controlling the object E3.

The curvature r4 and r5 may be varied depending on the type of the object W, the processing environment, the type of the process gas, and the type of the body 10 And the size and the shape of the substrate.

14 is a bottom view showing another example of the electrode plate 800 according to still another embodiment of the present invention.

14, the electrode plate 800 according to still another embodiment of the present invention is formed so that the boundary line L1 (L2) is formed so as to form the aforementioned stepped portion together with the side groove portions G1 and G2, Can be formed.

The second counterpart 30 and the first counterpart 20 or the second counterpart 30 and the third counterpart 40 may be subjected to surface treatments such as roughness or gloss, The first plasma environment E1 formed at the central part of the first plasma environment W and the first plasma environment E1 or the third plasma environment E3 formed at the rim can be precisely controlled.

15 is a bottom view illustrating a substrate processing apparatus 900 in accordance with some further embodiments of the present invention.

15, the substrate processing apparatus 900 according to still another embodiment of the present invention may be configured such that the first corresponding portion 20 and the third corresponding portion 40 or the first corresponding portion A second gas hole S3-2 is formed in the second corresponding portion 30, and the second gas hole S3-2 is formed in the second corresponding portion 30, The diameters D1 and D2 of the first gas holes S3-1 and the second gas holes S3-2 and / or the pitch distances P1 and P2 indicating the arrangement density are equal to or different from each other .

That is, the body 10 of the substrate processing apparatus 900 according to still another embodiment of the present invention is formed such that the first gas hole S3-1 and the second gas hole S3-2 are formed For example, the gas supplied through the gas supply pipe S1 of FIG. 1 serves as a showerhead type gas injection plate S2 having a plurality of gas injection holes S3 formed therein, and serves as an electrode have. Accordingly, the body 10 may be a part of the electrode plates 100 divided into a fan shape.

Therefore, by differentiating the above-mentioned elements, the second plasma environment E2 formed at the center portion of the object W and the first plasma environment E1 or the third plasma environment E3 formed at the edge portion are precisely Can be controlled.

Here, the first plasma environment E1 described above and the third plasma environment E3 may be the same or different from each other.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

W: object
L: Border
10: Body
20: First counterpart
30: Second counterpart
40: Third counterpart
100: electrode plate
1000: substrate processing apparatus

Claims (13)

A reactor in which the process is performed;
A gas supply unit for supplying at least one kind of process gas into the reactor;
An object supporting unit on which at least one object is placed and is rotatably installed inside the reactor so that the processing gas can be supplied to the object in a space division manner in accordance with the rotation direction; And
And an electrode plate installed inside the reactor so as to face an object placed on the object supporting unit and to which plasma power is applied,
Wherein the electrode plate comprises:
A body disposed such that a longitudinal direction thereof is directed to a rotation axis of the object supporting unit; And
Wherein the first plasma environment, the second plasma environment, and the third plasma environment are formed on an object placed on the object supporting unit, the plurality of objects being sequentially disposed in a portion far from the rotation axis of the body along the longitudinal direction of the body, A first counterpart, a second counterpart and a third counterpart;
Lt; / RTI >
Wherein a height of a bottom surface of the second corresponding portion from the object is set so that a height of the bottom surface of the second corresponding portion from the object is smaller than a height of the bottom surface of the second corresponding portion from between the second corresponding portion and the first corresponding portion, 1 corresponding portion and the third corresponding portion,
A first gas hole is formed in at least one of the first corresponding portion and the third corresponding portion,
And a second gas hole is formed in the second corresponding portion. delete A reactor in which the process is performed;
A gas supply unit for supplying at least one kind of process gas into the reactor;
An object supporting unit on which at least one object is placed and is rotatably installed inside the reactor so that the processing gas can be supplied to the object in a space division manner in accordance with the rotation direction; And
And an electrode plate installed inside the reactor so as to face an object placed on the object supporting unit and to which plasma power is applied,
Wherein the electrode plate comprises:
A body disposed such that a longitudinal direction thereof is directed to a rotation axis of the object supporting unit; And
Wherein the first plasma environment, the second plasma environment, and the third plasma environment are formed on an object placed on the object supporting unit, the plurality of objects being sequentially disposed in a portion far from the rotation axis of the body along the longitudinal direction of the body, A first counterpart, a second counterpart and a third counterpart;
Lt; / RTI >
Wherein a height of a bottom surface of the second corresponding portion from the object is set to a height corresponding to the first corresponding portion and the third corresponding portion from the object so that a step is formed in at least one of the second corresponding portion, The height of one or more of the parts is lower than the height,
A first gas hole is formed in at least one of the first corresponding portion and the third corresponding portion,
And a second gas hole is formed in the second corresponding portion. The method according to claim 1 or 3,
The body, the first corresponding portion, the second corresponding portion, and the third corresponding portion are integrally formed,
Wherein the first corresponding portion includes one end of the body near the rotation axis,
Wherein the second corresponding portion includes a middle portion of the body,
And the third corresponding portion includes the other end of the body remote from the rotation axis. The method according to claim 1 or 3,
Wherein the object is seated on an object support portion and revolved along a trajectory of a predetermined radius around the rotation axis,
Wherein the body is in the shape of a fan-shaped plate provided on an upper side of the track. The method according to claim 1 or 3,
A first boundary line is formed between the second corresponding portion and the first corresponding portion,
And a second boundary line is formed between the second corresponding portion and the third corresponding portion. The method according to claim 6,
Wherein the first boundary line and the second boundary line have different radii of curvature. The method according to claim 6,
Wherein the distance from the portion of the body corresponding to the center axis of the object to the first boundary is longer than the distance from the portion of the body corresponding to the center axis of the object to the second boundary. delete The method according to claim 1 or 3,
Wherein at least one of the diameter and the arrangement density of the first gas hole and the second gas hole is different from each other. The method according to claim 1 or 3,
Wherein at least one of the corner portions between the second corresponding portion and the first corresponding portion and between the second corresponding portion and the third corresponding portion is rounded rounded. The method according to claim 1,
And a side groove portion formed to be concave from the both side surfaces of the second corresponding portion in the width direction of the body toward the inside of the second corresponding portion is provided. The method according to claim 1 or 3,
Wherein at least one groove portion between the second corresponding portion and the first corresponding portion and between the second corresponding portion and the third corresponding portion is rounded rounded.

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