KR101977698B1 - O-ring for semiconductor equipment and manufacturing method thereof - Google Patents

Abstract

The O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention may include an annular main body portion, an abrasive layer formed on a surface of the main body portion, and a coating layer covering the abrasive layer. In addition, the O-ring for semiconductor manufacturing equipment according to an embodiment of the present invention may include the steps of preparing an annular body portion, polishing the surface of the body portion to form a polishing layer on the surface of the body portion, To form a coating layer on the substrate.

Description

[0001] O-RING FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT AND METHOD FOR MANUFACTURING [0002]

The present invention relates to an O-ring for a semiconductor manufacturing facility and a manufacturing method thereof, and more particularly, to an O-ring for a semiconductor manufacturing facility having excellent corrosion resistance and chemical resistance and a manufacturing method thereof.

In general, various processes such as a photolithography process, an etching process, a diffusion process, a chemical vapor deposition process, an ion implantation process, and a metal deposition process are selectively and repeatedly performed on a wafer during semiconductor manufacturing. For this purpose, The gate is sealed to seal the inside of the chamber, and each process is performed.

Among these semiconductor manufacturing processes, an etching process, a chemical vapor deposition process, and a metal deposition process use a process of generating plasma by applying RF power to a process gas injected into a sealed chamber. A semiconductor facility for generating plasma in this manner is generally a multi-chamber type in which a plurality of chambers are provided in one facility and a plurality of wafers are simultaneously processed. Accordingly, various processes such as an etching process or a chemical vapor deposition process or a metal deposition process can be selectively performed depending on the type of the chamber to be coupled. In such a multi-chamber type facility, the connection between the chamber and the chamber is made such that one side is brought into close contact with each other and then fixed firmly by the clamp. At this time, a plurality of O-rings are inserted as seal members on the surfaces to be brought into close contact with each other to seal the chambers.

However, the sealing at the junction between the chambers is continuously influenced by the plasma generated in the chamber. In other words, the plasma generated during the plasma etching and the ashing process is induced to the connection portion of the chamber, thereby damaging the O-ring provided for the sealing between the chambers. Such damage of the O-ring causes a leakage of the chamber, which causes problems such as a process failure and a product failure. That is, there is a problem that the effect of sealing is deteriorated due to such leakage.

Meanwhile, since such a semiconductor facility not only generates a plasma but also has a high-temperature and high-pressure condition in a closed chamber, residuals generated due to damage to the O-ring adhere to the wafer and cause defective products, The yield is lowered.

In order to minimize the damage of the O-ring, instead of the inexpensive silicon or Viton (FKM), Kaletsch (FFKM) is used which is comparatively excellent in chemical resistance and plasma resistance. However, it is 50 times less than silicon or Viton More than 100 times as much as the supply is becoming a major cause of rising production costs.

Korea Public Utility Model No. 2000-0012921 Korean Patent Publication No. 2007-0020855

It is an object of the present invention to provide an O-ring improved in plasma resistance and chemical resistance even under plasma or high-temperature and high-pressure conditions generated in a chamber of a semiconductor manufacturing facility, and a method of manufacturing the O-ring .

It is also intended to increase the efficiency of the production cost by delaying the replacement cycle by extending the service life of the O-ring while using a low-cost sealing material.

In addition, it is intended to minimize product leakage due to corrosion of the O-ring due to corrosion of the semiconductor chamber, and to significantly improve product yield by significantly reducing product defects caused by adhesion of the O-ring residue to the semiconductor wafer.

According to an aspect of the present invention, there is provided an O-ring for a semiconductor manufacturing facility, the O-ring including an annular main body, an abrasive layer formed on a surface of the main body, and a coating layer covering the abrasive layer.

The abrasive layer may be formed by barrel polishing, and the surface roughness (Ra) of the abrasive layer is preferably 10 to 100 mu m. It is preferable that the thickness R of the polishing layer is 0.0014 < R / D < 0.04 with respect to the thickness D of the main body portion. On the other hand, the thickness R of the abrasive layer can be defined by the following equation.

[Mathematical Expression]

Where D is the thickness of the body portion and D _in is the inner diameter of the body portion.

The coating layer may be made of parylene resin.

According to another aspect of the present invention, there is provided an O-ring for a semiconductor manufacturing facility, comprising: preparing an annular body portion; polishing the surface of the body portion to form a polishing layer on the surface of the body portion; To form a coating layer on the substrate.

At this time, the step of forming the abrasive layer includes the steps of injecting the main body portion, the abrasive material and water into a barrel container, rotating the barrel container, and washing the body portion formed with the abrasive layer can do.

The step of forming the coating layer may include a step of inserting a paralyne dimer in powder form into an evaporator, a step of evaporating the paralined dimer into a gaseous phase at 120 to 180 ° C. and 1 × 10 ^-4 to 1 torr Converting the paralin dimer into a paralin monomer in a pyrolyzer heated to 650 to 700 ° C. and maintained at a pressure of 1 × 10 ^-4 to 0.5 torr, And then coating the polymeric membrane with a polymer.

The o-ring for semiconductor manufacturing equipment according to the present invention and the method for manufacturing the o-ring according to the present invention can improve the corrosion resistance and chemical resistance of the o-ring by increasing the adhesion of the coating layer by forming a coating layer after performing a polishing process for roughening the surface of the o- Therefore, it is possible to minimize the leakage of the semiconductor chamber due to the corrosion of the O-ring, and it is possible to significantly reduce the defective product caused by attaching the residue of the O-ring to the semiconductor wafer.

In addition, the life of the O-ring is extended while using a low-cost sealing material, and the replacement period is lengthened, thereby reducing the manufacturing cost.

1 is a cross-sectional view of an O-ring for a semiconductor manufacturing facility in accordance with an embodiment of the present invention.
2 is a partially enlarged sectional view of an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention.
3 is a flowchart illustrating a process of manufacturing an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention.
4 is a flowchart showing a process of forming an abrasive layer in a process of manufacturing an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention.
5 is a flowchart showing a process of forming a coating layer in a process of manufacturing an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention.

The description of the present invention is merely an example for structural or functional explanation, and the scope of the present invention should not be construed as being limited by the embodiments described in the text. That is, the embodiments are to be construed as being variously embodied and having various forms, so that the scope of the present invention should be understood to include equivalents capable of realizing technical ideas. Also, the purpose or effect of the present invention should not be construed as limiting the scope of the present invention, since it does not mean that a specific embodiment should include all or only such effects.

Meanwhile, the meaning of the terms described in the present application should be understood as follows.

The terms " first ", " second ", and the like are intended to distinguish one element from another, and the scope of the right should not be limited by these terms. For example, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

It is to be understood that when an element is referred to as being "connected" to another element, it may be directly connected to the other element, but there may be other elements in between. On the other hand, when an element is referred to as being "directly connected" to another element, it should be understood that there are no other elements in between. On the other hand, other expressions that describe the relationship between components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

It is to be understood that the singular " include " or " have " are to be construed as including the stated feature, number, step, operation, It is to be understood that the combination is intended to specify that it does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

All terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used predefined terms should be interpreted to be consistent with the meanings in the context of the related art and can not be interpreted as having ideal or overly formal meaning unless explicitly defined in the present application.

FIG. 1 is a cross-sectional view of an O-ring for a semiconductor manufacturing facility according to one embodiment of the present invention, and FIG. 2 is a partially enlarged sectional view of an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention.

1 and 2, an O-ring 100 for a semiconductor manufacturing facility according to an embodiment of the present invention includes an annular body 110, an abrasive layer 120 formed on a surface of the body, Coating layer 130 that covers the surface of the substrate.

The O-ring 100 according to the present invention is a ring having a circular cross section and is used for sealing various piping and process chambers in a semiconductor manufacturing facility. The main body 110 is made of an elastic material such as nitrile butadiene rubber (NBR), fluorine rubber (FPM, FKM), EPDM, silicone rubber, CR rubber, FFKM Can be used.

Nitrile butadiene rubber is a copolymer obtained by emulsion polymerization of butadiene and acrylonitrile at a ratio of about 2: 1, and is also referred to as acrylonitrile butadiene rubber. If the content of nitrile is in the range of 42 to 46%, it is classified as polar nitrile, 36 to 41% as high nitrile, 31 to 35% as used nitrile and 25 to 30% as low nitrile. It is also excellent in abrasion resistance.

A fluoroelastomer is a fluoroelastomer in which a hydrogen atom (H) in a side chain bonded to a main chain CC bond is incompletely substituted with a fluorine atom (F), and a fluorine rubber (Copolymer), and is composed of a CF bond, which is an inert bonding structure having a large binding energy, and therefore is excellent in heat resistance and chemical resistance. It has excellent resistance to oil, fuel oil, lubricants, aliphatic-aromatic hydrocarbons and hydrocarbon solvents, and is the best rubber for weathering resistance, weather resistance, gas permeability, weather resistance and ozone resistance. Also, since it contains a large amount of fluorine, it is difficult to burn, has a low porosity, has a low permanent compression ratio and is excellent in resistance to aging.

EPDM (ethylene propylene rubber) is an amorphous polymer substance obtained by the copolymerization of ethylene and propylene, and is excellent in weather resistance, heat resistance and ozone resistance.

The silicone rubber is made of a silicon-carbon bond and has excellent plasma resistance under an oxygen plasma environment, and is excellent in heat resistance and abrasion resistance.

The CR rubber is a polychloroprene elastomer having excellent chemical resistance, heat resistance and refrigerant resistance.

The FFKM (perfluoroethylene-perfluoroalkyl vinyl ether-based perfluoroelastomer) FFKM is a fluoroethylene-perfluoroalkyl vinyl ether-based perfluoroalkyl vinyl ether-based perfluoroalkyl vinyl ether-based perfluoroalkyl vinyl ether- It is a fluorine rubber. It has excellent heat resistance, plasma resistance and chemical resistance, and is effective in suppressing particle generation and securing high temperature stability.

In addition, the sealing material may include any elastic material used in the technical field of the present invention without any particular limitation.

The polishing layer 120 may be obtained by surface-treating the surface of the main body portion 110. [ Specifically, the surface of the main body 110 can be obtained by roughening the surface by mechanical polishing, for example, barrel polishing. At this time, it is preferable to perform mechanical polishing rather than chemical polishing, which may cause corrosion due to the material characteristics of the main body 110.

Referring to FIG. 2, the polishing layer 120 may have irregular irregularities, and may be composed of an acid portion and a valley portion which are peaks in a cross-sectional graph of the polishing layer 120.

The surface roughness (Ra) of the polishing layer 120 is preferably 10 to 100 占 퐉. Here, the surface roughness (Ra) is obtained by electrically rippling the surface of the polishing layer (120) to obtain a roughness curve by obtaining a roughness curve, taking a measured length in the curve, The area of the part is divided by the measurement length. At this time, if the surface roughness Ra is less than 10 mu m, the surface of the main body 110 is smooth and the adhesion of the coating layer 130 is lowered. If the surface roughness Ra is 100 mu m or more, the thickness of the main body 110 decreases, . Particularly, when the surface roughness Ra is 15 to 40 탆, the sealing property of the O-ring 100 and the adhesion of the coating layer 130 are more excellent.

The thickness R of the polishing layer 120 refers to the height of the maximum peak in the cross-sectional graph of the polishing layer 120 and is 0.0014 <R / D <0.04 with respect to the thickness D of the main body 110 desirable. If the thickness is 0.0014 or less, the surface of the body 110 is smooth and the adhesion of the coating layer 130 is low. If the thickness is 0.04 or more, the thickness of the body 110 may be reduced to lower the sealing performance.

The thickness R of the polishing layer 120 can be obtained by the following equation.

[Mathematical Expression]

Herein, D _in refers to the inner diameter of the main body 110, which is the material of the O-ring. According to the above equation, the thickness control of the polishing layer 120 can be precisely and easily performed.

The coating layer 130 can be obtained by coating the resin to cover the polishing layer 120. Preferably a parylene resin. Paralin coating means a polymer coating deposited on a subject in a micro-thickness unit regardless of shape in the form of gas in a vacuum state at room temperature.

Hereinafter, characteristics of the paralin coating will be described with reference to Tables 1 to 3.

Paralyn Epoxy silicon urethane Electrical characteristic Dielectric strength (V / mil, thickness: 0.001 &quot; film) 6,900 4,500 to 5,600 - 5,000 to 5,600 Volume resistivity (23, 50% RH-cm) 6.9x10 ¹⁶ 10 ¹² ~ 10 ¹⁷ 10 ¹⁵ 10 ¹¹ ~ 10 ¹⁵ The surface resistance 23, 2.2x10 ¹⁵ 10 ¹³ - 10 ¹⁴ Dielectric constant (60 Hz) 3.15 3.15-5.0 2.75 ~ 3.05 4.0 to 4.75 Loss rate (60Hz) 0.020 0.002 to 0.01 0.007 to 0.001 0.015 to 0.017 Mechanical properties Tensile Strength (PSI) 10,000 4,000 ~ 13,000 800-1,000 175 ~ 10,000 Elongation (%) 200 3 to 6 100 100-1,000 Water absorption (24 hr,%) Less than 0.10% 0.1 to 0.2 0.12 0.1 to 0.15 Thermal properties Melting point () 291 Hardening Hardening 70 Thermal deformation () none 220 300 none Specific heat (20 cal / g /) 0.17 0.25 0.42

[Membrane Properties] Gas permeability
(cc-mil / 100 in2-24hr ASTM D1434-63T) Water vapor transmission
(gm-mil / 100 in2-24hr ASTM E96-63T) N ₂ O ₂ CO ₂ H ₂ Paralyn 0.6 5 14 110 One Epoxy 4 5-10 8 110 1.79 to 2.38 silicon ... 50,000 300,000 4,500 4.4 ~ 7.9 urethane 80 200 3,000 ... 2.4 to 8.7

※ ASTM: American Society for Testing Materials

[Compositional characteristics according to coating method] Paralyn Epoxy silicon urethane Uniformity, conformal layer E G G G Stress level and pinhole presence E M M M Dielectric property E M VG M flexibility VG L VG VG Frictional resistance E VG L VG Coefficient of thermal expansion E VG L M Resistance to moisture, gas and liquid E VG M G Resistance to chemicals and solvents E VG M VG Adhesion to substrate G VG M G Flexibility of repair G L M G Dust Removability E L L L

E = excellent, VG = very good, G = good, M = moderate, L = low

As shown in Tables 1 to 3, the paralin coating has a higher permittivity, lower dielectric constant, and lower decomposition rate than other coating materials, a completely sealed coating hardly absorbs moisture, and most of the acid, alkali, And are not substantially affected by chemicals in the environment. It has excellent thermal stability due to no thermal or mechanical deformation or characteristic change in the temperature range between -200 and 420 ° C. It has excellent penetration ability and uniform coating can be made not only on the surface but also in fine gaps and holes, Therefore, pin-holes and air bubbles generated in the liquid coating do not occur.

Hereinafter, a method of manufacturing an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention will be described with reference to FIGS. 3 to 5. FIG.

FIG. 3 is a flowchart illustrating a process of manufacturing an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention. FIG. 4 is a flowchart illustrating a process of forming an O- 5 is a flowchart showing a process of forming a coating layer in a process of manufacturing an O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention.

3, the O-ring for a semiconductor manufacturing facility according to an embodiment of the present invention includes a step S1 of preparing an annular body 110, a step of polishing the surface of the body 110, (S2) forming an abrasive layer 120 on the surface of the polishing layer 110 and coating the resin on the surface of the polishing layer 120 to form the coating layer 130.

As shown in FIG. 4, the polishing step S2 includes the steps of putting the body 110, the abrasive, water into the barrel container S21, rotating the barrel container S22, (S23) washing the body portion 110 with the layer 120 formed thereon.

In the present invention, the polishing step (S2) is a wet polishing, and thus may include a compound as needed in addition to water. As the polishing machine, a centrifugal polishing machine, a vortex type polishing machine, a vibration polishing machine, a rotary polishing machine, or the like can be used. In the applying step S21, a grindstone may be used as the abrasive, and for example, silica sand may be used. The thickness of the grindstone is 30 占 퐉 or less, and if necessary, it may further include abrasive powder.

In the rotating step S22, the barrel container is rotated, where polishing is performed by collision between the input materials, friction, and the like. The rotation step S22 proceeds for about 7 hours. In the case of applying to a vibration grinder, the rotation step S22 may be replaced with a vibration step. The cleaning step S23 is performed in order to remove foreign matter adhered to the surface of the O-ring while the rotation step S22 is performed.

Table 4 below shows a comparison of the front and back of the polishing step S2 according to an embodiment of the present invention.

Before polishing After polishing

As shown in Table 4, it can be seen that the smooth portion (bright portion) before the polishing step S2 is roughened through polishing. That is, it can be seen that the entire surface after the polishing step S2 is relatively uniform. Therefore, in the subsequent coating step S3, the parallax coating film provides a good condition to be attached to the body of the O-ring.

As shown in FIG. 5, the coating step S3 includes a step S31 of inserting a di-para-xylylene powder into the evaporator, a step of heating the powdery paralin dimer to a temperature of 120 to 180 DEG C and 1x10 &lt; the step of evaporation to the gas phase in an atmosphere of ^-4 ~ 1torr (S32), and heating the parallel on the gas lean dimer to 650 ~ 700 ℃ which pressure is converted in the pyrolysis group maintained below 1x10 ^-4 ~ 0.5torr in parallel Lin monomer And a step (S34) of depositing a paralin monomer on the surface of the polishing layer 120 in a polymer state in a vacuum chamber at room temperature to coat the paralin polymer film.

Since the O-ring for semiconductor manufacturing equipment according to an embodiment of the present invention improves the adhesion of the paraline thin film by polishing the surface of the o-ring before the parallax coating, the weight loss rate due to the plasma treatment is less than 1% . Therefore, the O-ring can be easily damaged by the plasma treatment as compared with the existing O-ring, thereby significantly reducing the leakage occurrence rate and providing the O-ring with a significantly improved sealing effect.

In general, the temperature in the semiconductor manufacturing chamber used for the semiconductor process is at a high temperature of 300 DEG C or higher, so that the residue of the O-ring adheres to the semiconductor wafer, resulting in product failure. However, since the o-ring for semiconductor manufacturing equipment according to the present invention is coated with paralin having excellent heat resistance and chemical resistance after polishing the surface of the o-ring material, the adhesion of the paralin is improved. As a result, Respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Example

Example 1

A 3.53 mm thick FKM (Viton) was used as an o-ring material, and a surface grinding machine was used for the surface treatment. Silicone was used as the abrasive, and the surface roughness (Ra) was 23.56 탆. The paralin dimer was vaporized in powder form at 180 ° C. and 1 torr atmosphere and decomposed into paralin monomers in a pyrolyzer at 700 ° C. and 0.5 torr atmosphere and then subjected to barrel polishing in a chamber of 25 ° C. and 1 × 10 ^-3 torr The polymer was deposited on the surface of the surface treated o-ring to coat the polymer film.

Example 2

An o-ring for a semiconductor manufacturing facility was manufactured using the same method as in Example 1, except that a silicone rubber having a thickness of 2.62 mm was used as an o-ring material. The surface roughness (Ra) was 18.3 占 퐉.

Comparative Example

Comparative Example 1

As Comparative Example 1, FKM (Viton) having a thickness of 3.53 mm was used as an o-ring material for a semiconductor manufacturing facility. In Comparative Example 1, the O-ring material was not surface polished or coated.

Comparative Example 2

And FFKM (Kalrez type) of 2.62 mm was used as an o-ring material for a semiconductor manufacturing facility. In Comparative Example 2, the surface of the O-ring material was not polished or coated.

Comparative Example 3

The O-ring material of Comparative Example 1 was subjected to paralin coating without surface polishing, thereby obtaining Comparative Example 3.

Experimental Example

Experimental Example 1: NF ₃ Measurement of weight loss rate by plasma treatment under atmosphere>

Experiments were carried out to more specifically confirm whether the o-rings for semiconductor manufacturing equipment according to Examples 1 to 2 and Comparative Examples 1 to 3 were free from leaks and excellent chemical resistance even in a semiconductor production chamber in which plasma was generated Respectively. The experiment was conducted by ICP plasma method. NF ₃ gas was flowed at a flow rate of 200 sccm, and the RF power was 400 Watt, the pressure was 50 mTorr, the temperature was 150 ° C., and the test time was 20 min × 6 times (2 hours). The results of Experimental Example 1 are shown in Table 5 below.

sample Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Before the plasma treatment (g) 2.525 1.725 2.514 1.708 2.574 After plasma treatment (g) 2.506 1.714 1.587 1.517 2.482 Weight loss (g) 0.019 0.011 0.927 0.191 0.092 Weight loss rate (%) 0.75 0.64 36.87 11.2 3.57

As shown in Table 5, in Examples 1 and 2 in which the parylene thin film was coated by the CVD method after the surface treatment by barrel polishing, the weight loss rate was 0.75%, 0.64% and 1% Respectively. On the contrary, in the case of Comparative Example 1, it was confirmed that the weight loss rate exceeded 30%. If the weight loss rate exceeds 30%, the chemical resistance and durability of the O-ring are remarkably lowered, and the leakage occurrence rate is increased, thereby reducing the sealing effect.

On the other hand, in Comparative Example 2, the weight loss rate was as low as 10% as compared with Comparative Examples 1 and 3. However, in the case of Calets, the O-ring price is 50 to 100 times higher than that of Viton or silicon. Causing it to rise.

In the case of Comparative Example 3, paralin coating was performed as in Examples 1 and 2, but there was a difference in that the surface was not polished. In this case, however, the weight loss rate was as low as 3.57% have. However, since the surface of Comparative Example 3 is not polished, there is a difference from the embodiment of the present invention in terms of durability as shown in Experimental Example 3 below.

Experimental Example 2: O ₂ Measurement of weight loss rate by plasma treatment under atmosphere>

In Experimental Example 1, Experimental Example 2 was performed using O ₂ instead of NF ₃ as a reaction gas. The results are shown in Table 6 below.

sample Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Before the plasma treatment (g) 2.525 1.725 2.514 1.708 2.574 After plasma treatment (g) 2.521 1.722 1.954 1.654 2.517 Weight loss (g) 0.004 0.003 0.56 0.054 0.057 Weight loss rate (%) 0.16 0.17 22.3 3.16 2.21

As can be seen from Table 6, the rate of increase in the loss of O ₂ was less in the O ₂ atmosphere than in the NF ₃ atmosphere of Experimental Example 1, and in Examples 1 and 2 as in Experimental Example 1, the weight loss rate was 0.2% Respectively. On the contrary, in the case of Comparative Example 1, it was confirmed that the weight loss rate exceeded 20%. If the weight loss ratio exceeds 20%, the chemical resistance and durability of the O-ring are remarkably lowered and the leakage occurrence rate is increased, thereby reducing the sealing effect. Therefore, it has been confirmed that if the parylene thin film is not coated on the surface of the o-ring, leakage occurs and the durability is poor so that the sealing effect according to the present invention can not be sufficiently manifested.

On the other hand, in Comparative Example 2, the weight loss rate was as low as 3% as compared with Comparative Examples 1 and 3. However, in the case of the Kalets, the O ring price is 50 to 100 times higher than that of Viton or silicon. Causing it to rise.

In the case of Comparative Example 3, paralin coating was performed as in Examples 1 and 2, but there was a difference in that the surface was not polished. In this case, however, it was found that the weight loss rate was as low as 2.21% have. However, in the case of Comparative Example 3, since surface polishing is not performed, there is a difference from the embodiment in durability as shown in Experimental Example 3 below.

&Lt; Experimental Example 3: Durability measurement test >

In this Experimental Example, an o-ring coated with a paralin coating after surface treatment as in Example 1 and an o-ring coated with paralin coating without surface treatment as in Comparative Example 3 were bent 360 degrees in both directions and 10 times or more in both directions After the test, an experiment was conducted to measure the occurrence of cracks. The results are shown in Table 7 below.

sample Example 1 Comparative Example 3 After the experiment

Remarks No cracking or separation of coating film Cracking and easy separation of coating film

As can be seen from the above Table 7, in Example 1, no crack was generated in the coating film after the bending test. Particularly, as shown in the photograph below, a part of the o-ring was cut and the adhesive test was performed with a tape (3M ^® # 610 paint test tape -1,219 gf / in).

On the other hand, in Comparative Example 3, a whitish crack occurred in the coating film after the bending test, and after a part of the o-ring was cut and tested for adhesion with a tape (3M ^® # 610 coating test tape -1,219 gf / in) I could see that it was separated.

Through these experiments, it can be seen that the durability is excellent when the paralin coating is performed after the barrel polishing as in the case of Example 1. [

It can be expected that the defective product caused by the adhesion of the residue to the wafer due to the separation of the coating layer without causing leakage easily in the semiconductor manufacturing chamber can be expected to be remarkably reduced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as set forth in the following claims And changes may be made without departing from the spirit and scope of the invention.

100: O ring
110:
120: polishing layer
130: Coating layer

Claims (8)

An annular main body portion;
An abrasive layer formed on a surface of the main body; And
And a coating layer covering the polishing layer,
The surface roughness (Ra) of the abrasive layer is 10 to 100 탆,
Wherein the thickness R of the abrasive layer is defined as 0.0014 < R / D < 0.04 with respect to the thickness D of the main body, and is defined by the following equation.
[Mathematical Expression]

R is the height of the maximum peak in the cross-sectional graph of the polishing layer
D is the thickness of the body portion
D _in is the inner diameter of the main body portion
delete delete delete The method according to claim 1,
Wherein the coating layer is made of parylene resin.
Preparing an annular body portion;
Polishing the surface of the body portion to form a polishing layer on the surface of the body portion; And
And coating a surface of the polishing layer with a resin to form a coating layer,
Characterized in that the surface roughness Ra of the abrasive layer is 10 to 100 占 퐉 and the thickness R is 0.0014 <R / D <0.04 with respect to the thickness D of the main body portion and is defined by the following equation Method for manufacturing o - rings for semiconductor manufacturing equipment.
[Mathematical Expression]

R is the height of the maximum peak in the cross-sectional graph of the polishing layer
D is the thickness of the body portion
D _in is the inner diameter of the main body portion
The method according to claim 6,
The step of forming the abrasive layer
Introducing the main body portion, the abrasive material, and water into a barrel container;
Rotating the barrel vessel; And
And washing the body portion with the polishing layer formed thereon.
8. The method according to claim 6 or 7,
The step of forming the coating layer
Inserting a paralyne dimer (Di-para-xylylene) into the evaporator in powder form;
Vaporizing the paralin dimer in a gaseous phase at 120 to 180 ° C and 1 x 10 ^-4 to 1 torr atmosphere;
Converting the paralin dimer to a paralin monomer in a pyrolyzer heated to 650 to 700 ° C. and maintained at a pressure of 1 × 10 ^-4 to 0.5 torr; And
Depositing the paralin monomer on the surface of the polishing layer in a polymer state in a vacuum chamber at room temperature to coat the paraline polymer film.

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