KR101976791B1 - Memory device by using bloch-point structure and manufacturing method thereof - Google Patents

Abstract

A memory device using a Bloch point structure according to the present invention is a memory device using a Bloch point structure. The memory device includes a first ferromagnetic layer having a predetermined pattern structure, a non-magnetic layer formed on the first ferromagnetic layer, a first antiferromagnetic layer formed horizontally in a manner to embed the first ferromagnetic layer and the nonmagnetic layer to expose an upper portion of the nonmagnetic layer; A second ferromagnetic layer formed on the ferromagnetic layer; and a second antiferromagnetic layer formed on the second ferromagnetic layer, wherein the memory device has a first ferromagnetic layer and a non- And the upper portion excluding the first region may be partitioned into a second region.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a memory device and a method of manufacturing a memory device using a Bloch point structure,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a memory device, and more particularly, to a memory device capable of reading a data recorded in a magnetic layer by moving a Bloch-point formed in a magnetic layer (ferromagnetic layer) And a manufacturing method thereof.

As is well known, a magnetic region constituting a magnetic body is called a magnetic domain wall, which can be moved by a magnetic field or an electric current applied from the outside.

When a magnetic field is applied to all the memory cells, all the memory cells are simultaneously moved. Therefore, in order to accurately operate only the desired memory cells (independently driving each memory cell) You have to create a magnetic field application structure.

Therefore, the conventional memory device using the magnetic domain wall movement has a problem that the whole structure becomes complicated because a separate magnetic field application structure must be applied to each cell. Due to such a problem, the memory device such as MRAM (Magnetic RAM) (High integration).

As a result, attention is being paid to the magnetic domain wall moved by the current, and when a current flows through the nanowire having the magnetic domain wall, all the magnetic domain walls formed move in the opposite direction to the current, The magnetic field application structure of FIG.

However, in the case of a conventional memory device using a magnetic domain wall, if the moving velocity of the magnetic domain wall increases to a certain critical velocity (for example, 300 m / s or more), a phenomenon of a walker breakdown, Load and deformation are induced because the spindle, which induces the movement of the magnetic wall, overcomes the dipole-dipole interaction, one of the causes of the wall motion.

Therefore, the conventional memory device using the magnetic domain wall movement has a disadvantage that it has a limitation in realizing a very high-speed memory device (memory device) due to the magnetic domain wall collapse phenomenon.

Korean Patent Publication No. 2010-0054357 (Published on May 25, 2010)

The present invention relates to a memory device and a memory device using a Bloch point structure capable of realizing high-speed information reading by moving a Bloch-point formed in a magnetic layer through a current application to a reading position and measuring a resistance by flowing a current, Method.

The problems to be solved by the present invention are not limited to those mentioned above, and another problem to be solved by the present invention can be clearly understood by those skilled in the art from the following description will be.

According to an aspect of the present invention, there is provided a memory device using a Bloch point structure, comprising: a first ferromagnetic layer having a predetermined pattern structure; a non-magnetic layer formed on the first ferromagnetic layer; A first antiferromagnetic layer horizontally formed to embed the first ferromagnetic layer and the nonmagnetic layer to expose an upper portion of the nonmagnetic layer, and a second antiferromagnetic layer formed on the first antiferromagnetic layer, A second ferromagnetic layer formed on the first ferromagnetic layer and a second antiferromagnetic layer formed on the second ferromagnetic layer, the memory device comprising: a first ferromagnetic layer and a nonmagnetic layer, And the upper part of the first area is divided into a second area excluding the first area.

The first ferromagnetic layer of the present invention is a fixed layer in which the magnetization direction of the magnetic substance is fixed and the second ferromagnetic layer is a free layer in which the magnetization direction of the magnetic substance is changed by an external magnetic pole , And a Bloch point that is a magnetic structure.

The first and second antiferromagnetic layers of the present invention can function to prevent the surface magnetization of the second ferromagnetic layer from being changed by the external magnetic poles.

The BLOCK point of the present invention may be formed when a current equal to or greater than the threshold intensity is applied to the first region in the vertical direction.

The BLOCK point of the present invention is moved by an external current, and a BLOCK point in the second area may move to the first area when the external current is applied in a vertical direction above a threshold intensity.

The movement of the Bloch point of the present invention can cause the inversion of the magnetization direction of the free layer in the first region.

The magnetization direction of the present invention is such that the upper-most magnetization direction of the thin film of the free layer in the first region is reversed in the upper-lower magnetization direction or the upper-lower magnetization direction of the thin- It can be reversed to the upper upper magnetization direction.

The inversion of the magnetization direction of the present invention is characterized in that the resistance is relatively low when the magnetization direction of the pinned layer is equal to the magnetization direction of the free layer and the resistance is relatively high when the magnetization direction of the pinned layer is different from the magnetization direction of the free layer A higher giant magneto-resistance (GMR) or tunneling magneto-resistance (TMR) can be used.

The first ferromagnetic layer of the present invention may be any one of cobalt, cobalt-iron-boron alloy, and cobalt-iron alloy.

The first ferromagnetic layer of the present invention may have a thickness ranging from 10 nm to several hundreds nm.

The nonmagnetic layer of the present invention may be either a nonmagnetic metal or an insulator.

The nonmagnetic layer of the present invention may be copper or chromium.

The non-magnetic layer of the present invention may have a thickness ranging from several angstroms to several tens of nanometers.

The second ferromagnetic layer of the present invention may be any one of nickel-iron alloy, cobalt, nickel, and iron.

The second ferromagnetic layer of the present invention may have a thickness ranging from 50 nm to several hundreds nm.

Each of the first and second antiferromagnetic layers of the present invention may be any one of an iridium-manganese alloy, a cobalt-nickel oxide alloy, a manganese-plutinum alloy, ferromanganese, and cobalt oxide.

Each of the first and second antiferromagnetic layers of the present invention may have a thickness ranging from 50 nm to several hundreds nm.

The first ferromagnetic layer and the nonmagnetic layer of the present invention are formed of two laminated structures spaced apart from each other by a predetermined distance, one laminated structure functions as a recording element of information, and the other laminated structure is a reading element of information Function.

The first ferromagnetic layer and the nonmagnetic layer of the present invention may be formed of a single laminated structure and function as a recording element of information or a reading element of information.

The predetermined pattern structure of the present invention may be any one of a circle, a rectangle, and a polygon.

According to another aspect of the present invention, there is provided a method of manufacturing a ferromagnetic semiconductor device, comprising: forming a first ferromagnetic layer having a predetermined pattern structure on a base; forming a nonmagnetic layer on the first ferromagnetic layer; Forming a first antiferromagnetic layer which is horizontally formed to fill the non-magnetic layer and exposes an upper portion of the non-magnetic layer; forming a second ferromagnetic layer on the non-magnetic layer and the first antiferromagnetic layer; And forming a second antiferromagnetic layer on the second ferromagnetic layer. The present invention also provides a method of manufacturing a memory device using the Bloch point structure.

The first ferromagnetic layer of the present invention is a fixed layer in which the magnetization direction of the magnetic substance is fixed and the second ferromagnetic layer is a free layer in which the magnetization direction of the magnetic substance is changed by an external magnetic pole , And a Bloch point that is a magnetic structure.

The first ferromagnetic layer and the nonmagnetic layer of the present invention are formed of two laminated structures spaced apart from each other by a predetermined distance, one laminated structure functions as a recording element of information, and the other laminated structure is a reading element of information Function.

The first ferromagnetic layer and the nonmagnetic layer of the present invention may be formed of a single laminated structure and function as a recording element of information or a reading element of information.

According to another aspect of the present invention, there is provided a ferromagnetic device including a first antiferromagnetic layer, a first ferromagnetic layer formed on the first antiferromagnetic layer, a second ferromagnetic layer formed on the first ferromagnetic layer, A second ferromagnetic layer formed on the non-magnetic layer; and a second ferromagnetic layer formed horizontally in a manner to embed the non-magnetic layer and the second ferromagnetic layer, Wherein the memory device comprises a non-magnetic layer and a lower portion of the second ferromagnetic layer are divided into a first region and a lower region excluding the first region is divided into a second region, A memory device using a point structure can be provided.

The first ferromagnetic layer and the nonmagnetic layer of the present invention are formed of two laminated structures spaced apart from each other by a predetermined distance, one laminated structure functions as a recording element of information, and the other laminated structure is a reading element of information Function.

The first ferromagnetic layer and the nonmagnetic layer of the present invention may be formed of a single laminated structure and function as a recording element of information or a reading element of information.

The present invention relates to a magnetization direction-based magnetization direction recording method and a magnetism direction-based magnetization direction recording method, which is a method of moving a Bloch point to a position of a read element by applying a current in a horizontal direction to a magnetic layer, Information can be read at an extremely high speed.

1 is a schematic perspective view of a memory device using a Bloch point structure according to a first embodiment of the present invention.
2 is a cross-sectional view of a memory device according to a first embodiment of the invention.
Figures 3A-3K are process flow diagrams illustrating the main process of fabricating a memory device according to the first embodiment.
4 is an exemplary view showing a magnetization structure in which a Bloch point is formed.
5 is a cross-sectional view of the magnetization structure shown in FIG.
6 is an exemplary diagram showing the magnetization distribution in the upper layer.
7 is an exemplary view showing the magnetization distribution of the intermediate layer.
8 is an exemplary view showing the magnetization distribution in the lower layer.
9 is an exemplary view showing a magnetization structure in which a plurality of Bloch points are formed.
10 is a schematic perspective view of a memory device using a Bloch point structure according to a second embodiment of the present invention.
11 is a cross-sectional view of a memory device according to a second embodiment of the invention.
12 is a schematic perspective view of a memory device using a Bloch point structure according to a third embodiment of the present invention.
13 is a cross-sectional view of a memory device according to a third embodiment of the present invention.
14 is a schematic perspective view of a memory device using a Bloch point structure according to a fourth embodiment of the present invention.
15 is a cross-sectional view of a memory device according to a fourth embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. To fully disclose the scope of the invention, and the scope of the invention is only defined by the claims.

In describing embodiments of the present invention, a detailed description of well-known functions or constructions will be omitted unless otherwise described in order to describe embodiments of the present invention. The following terms are defined in consideration of the functions in the embodiments of the present invention, which may vary depending on the intention of the user, the intention or the custom of the operator. Therefore, the definition should be based on the contents throughout this specification.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[First Embodiment]

FIG. 1 is a schematic perspective view of a memory device using a Bloch point structure according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of a memory device according to a first embodiment of the present invention.

1 and 2, a memory device according to an embodiment of the present invention includes first ferromagnetic layers 104a and 104b having a predetermined pattern structure, first and second ferromagnetic layers 104a and 104b, The upper portions of the nonmagnetic layers 104a and 104b are horizontally exposed in the form of embedding the nonmagnetic layers 106a and 106b and the first ferromagnetic layers 104a and 104b and the nonmagnetic layers 106a and 106b A second ferromagnetic layer 112 formed on the first antiferromagnetic layer 110, a second ferromagnetic layer 112 formed on the non-magnetic layers 106a and 106b and the first antiferromagnetic layer 110 formed on the first antiferromagnetic layer 110, And a second antiferromagnetic layer 114 formed on the second antiferromagnetic layer.

Here, the first ferromagnetic layers 104a and 104b and the non-magnetic layers 106a and 106b may be formed of two laminated structures spaced apart by a predetermined distance, and one laminated structure (e.g., 104a and 106a) And another laminate structure (e.g., 104b, 106b) may be defined as a read element of information (e.g., a giant magneto-resistive (GMR) sensor, etc.).

To this end, current application portions (not shown) connected to both ends of each of the first ferromagnetic layers 104a and 104b through a conductive line 116 may be coupled.

The first ferromagnetic layers 104a and 104b may be made of a magnetic material having a relatively strong coercive force such as cobalt, a cobalt-iron-boron alloy, a cobalt-iron alloy or the like. For example, the first ferromagnetic layers 104a and 104b may have a thickness ranging from 10 nm to several hundreds nm Lt; / RTI >

The non-magnetic layers 106a and 106b may be made of any one of a non-magnetic metal or an insulator such as copper, chromium and the like, and may have a thickness ranging from several angstroms to several tens of nanometers, for example.

The pattern structure of each laminated structure constituting the recording element or the reading element may be, for example, any one of a circle, a rectangle and a polygon, or may have various shapes capable of realizing the same function.

Then, each of the first and second antiferromagnetic layers 110 and 114 can function to prevent (impede) the surface magnetization of the second ferromagnetic layer 112 from being changed by external stimuli.

Here, each of the first and second antiferromagnetic layers 110 and 114 may be made of any one of iridium-manganese alloy, cobalt-nickel oxide alloy, manganese-platinum alloy, ferromanganese and cobalt oxide, And may have a thickness ranging from 50 nm to several hundreds nm.

The second ferromagnetic layer 112 may be composed of a single magnetic material or alloy such as a nickel-iron alloy, cobalt, nickel, iron, or the like, and may have a thickness ranging from 50 nm to several hundreds nm, for example.

Referring again to FIG. 2, the first ferromagnetic layers 104a and 104b and the non-magnetic layers 106a and 106b are divided into an upper region (an upper region vertically partitioned by a dotted line boundary) into a first region A, The upper region except for the first region A, that is, the first ferromagnetic layer 104a, 104b and the remaining upper region where the nonmagnetic layers 106a, 106b are not formed can be partitioned into the second region B have.

Here, the first ferromagnetic layers 104a and 104b may be defined as a fixed layer in which the magnetization direction of the magnetic substance is fixed, and the second ferromagnetic layer 112 may be defined as a direction in which the magnetization direction of the magnetic substance is changed The free layer can be defined as a free layer.

At this time, the free layer may include a Bloch point, which is a magnetic structure, and the BLOCK point of this free layer may be formed when a current equal to or greater than a predetermined threshold intensity is applied to the first area A in the vertical direction have. That is, the Bloch point can be moved by an external current. When the external current equal to or higher than the threshold current is applied in the vertical direction to the first ferromagnetic layers 104a and 104b, (A). ≪ / RTI >

Here, the movement of the Bloch point may cause the inversion of the magnetization direction of the free layer in the first region (A). For example, the magnetization direction may be such that the upper-most magnetization direction of the thin film of the free layer in the first region A is reversed to the lower-most magnetization direction, or the magnetization direction of the upper- It can be inverted in the upward magnetization direction.

The inversion of the magnetization direction in the free layer is relatively low when the magnetization direction of the pinned layer is equal to the magnetization direction of the free layer and the resistance is relatively increased when the magnetization direction of the pinned layer is different from the magnetization direction of the free layer Or giant magneto-resistance (GMR) or tunneling magneto-resistance (TMR).

On the other hand, information can be recorded on the second ferromagnetic layer 112 defined as the free layer based on the magnetization direction when a spin deflection current of more than a threshold intensity is applied from the recording elements (for example, 104a and 106a).

At this time, the critical current density for information recording may vary depending on which material is used as a free layer. For example, in the case of permalloy, a simulation result of a numerical computation shows that the critical current density for forming a Bloch point is 5 ㅧ 10 ¹² A / m < ² >.

That is, each of the first ferromagnetic layers 104a and 104b, which can be defined as a fixed layer, is defined to perform a function (role) to make a spin deflection current, and the second ferromagnetic layer 112 has a function ). ≪ / RTI >

For example, a polarizer may be positioned at the bottom of the BLOCKHOW point structure as shown in FIG. 1, and then a spin deflection current may be applied to the BLOCK point structure. For example, as shown in FIG. 5, information is stored based on the magnetization direction .

The magnetic structure stored in the second ferromagnetic layer 112 can move in the current direction (direction opposite to the movement direction of electrons) without destroying a large number of the Bloch points when a current is applied to the conductor 116 .

At this time, in the case of magnetic vortex nuclei, only the pure Bloch point moves without moving because of antiferromagnetic coupling with the antiferromagnetic layer.

Next, a read element made up of the first ferromagnetic layer 104b and the non-magnetic layer 106b applies a current to the lead 116 to move the Bloch point BP to the read position, The information recorded in the second ferromagnetic layer 112 at the read position can be read.

That is, in the memory device of this embodiment, the recording element and the read element are fixed, and the information of the position to be read is transferred to the position of the read element through the application of the current, thereby reading the information.

For example, a GMR sensor or a TMR sensor (read element) can be used to measure the resistance by flowing current, and store the information as a relative difference in the measured resistance. For example, if the measured resistance value is larger than a preset reference value, the reading is read as " 0 ", and if the measured resistance value is smaller than the predetermined reference value, the reading can be read as " 1 ".

That is, when the magnetic moments of the two ferromagnetic materials (the first and second ferromagnetic layers) are parallel, the spindle which can not pass through the ferromagnetic material becomes small, so that the resistance becomes relatively low (information bit "1") and the magnetic moments of the two ferromagnetic materials become half When it is parallel, the number of spindles passing through the ferromagnetic body increases, so that the resistance becomes relatively high (information bit "0"), and information stored in the magnetic layer can be read through this principle.

At this time, since the magnetic moment of the free layer (second ferromagnetic layer) should not be deformed, the current intensity in the reading element should be much lower than the current intensity in the recording element.

4 is an exemplary view showing a magnetization structure in which a Bloch point is formed.

Referring to FIG. 4, red shows a portion where the ratio of the z direction of the magnetization is 70% or more upward, and blue shows a portion where the ratio of the z direction of magnetization is 70% or more downward, It can be seen that the boundary between blue is composed of Bloch points.

5 is a cross-sectional view of the magnetization structure shown in FIG.

Referring to FIG. 5, it can be shown that information can be recorded (e.g., upward magnetization direction "1", downward magnetization direction "0") based on the vertical magnetization component between the upper and lower magnetic vortex nuclei. In FIG. 5, information bits "1" are recorded (recorded) when the perpendicular magnetization component is divided upwardly, and information bits "0" are recorded (recorded) when the vertical magnetization component is downward. .

FIG. 6 is an exemplary view showing the magnetization distribution of the upper layer, FIG. 7 is an exemplary view showing the magnetization distribution of the intermediate layer, and FIG. 8 is an exemplary view showing the magnetization distribution of the lower layer.

Referring to FIGS. 6 to 8, the magnetization distribution of the upper layer, the middle layer, and the lower layer is shown, wherein the hue represents the vertical magnetization component and each contour represents the horizontal magnetization component. In the uppermost layer and the lower layer, there are magnetic vortex nuclei in which the perpendicular magnetization components are opposite to each other, and the Bloch point exists in the middle layer.

9 is an exemplary view showing a magnetization structure in which a plurality of Bloch points are formed.

Referring to FIG. 9, the memory device of this embodiment shows that it can store information in the same manner as a racetrack memory, which is a conventional memory device using a magnetic domain wall.

Next, a series of processes for manufacturing the memory device according to the present embodiment having the above-described structure will be described in detail.

Figures 3A-3K are process flow diagrams illustrating the main process of fabricating a memory device according to the first embodiment.

Referring to FIG. 3A, a resist 102a having a predetermined thickness is coated on a base (e.g., a wafer or the like) 100 by performing a coating process such as spin coating as an example.

Next, a patterning process using a mask or the like, for example, an E-beam lithography process or a photolithography process is performed to selectively remove a part of the resist 102a. As a result, A resist pattern 102 having a shape for defining a laminated structure constituting a recording element and a reading element is formed.

Then, a deposition process such as sputtering, molecular beam epitaxy (MBE), atomic layer deposition (ALD), pulse laser deposition (PLD), electron beam evaporator As shown in FIG. 3C, first ferromagnetic layers 104a and 104b having a predetermined thickness (for example, a thickness range of 10 nm to several hundreds of nm) are formed in a region where the resist is removed.

Here, the first ferromagnetic layers 104a and 104b may be a magnetic substance having a relatively strong coercive force such as cobalt, a cobalt-iron-boron alloy, a cobalt-iron alloy, or the like.

3D, a deposition process such as sputtering, MBE, ALD, PLD, electron beam evaporator, or the like is performed to form a predetermined (predetermined) thickness on the first ferromagnetic layers 104a and 104b, The non-magnetic layers 106a and 106b having a thickness (for example, a range of thicknesses of several angstroms to several tens of nanometers) are formed.

Here, the nonmagnetic layers 106a and 106b may be any one of a metal or an insulator which is not magnetic, such as copper, chromium, or the like.

Thereafter, a lift-off process is performed to remove the remaining resist pattern 102, thereby forming a first ferromagnetic layer 104a and a second ferromagnetic layer 104a on the base 100, A recording element made of a stratum 106a and a reading element made of a first ferromagnetic layer 104b and a nonmagnetic layer 106b are formed. Here, the recording element and the reading element can be defined as a laminated structure.

Next, as shown in Fig. 3F as an example, a resist film 108a of a thick film completely filling the recording element and the reading element formed spaced apart from the recording element by a predetermined distance is applied by carrying out a coating process such as spin coating or the like do.

The nonmagnetic layers 106a and 106b are selectively removed by selectively removing a part of the resist 108a by performing a patterning process such as an electron beam lithography or a photolithography process using a mask or the like, A resist pattern 108 having a shape in which a resist is selectively left only on an upper portion of the resist pattern 108 is formed.

Then, a deposition process such as sputtering, MBE, ALD, PLD, electron beam evaporator, or the like is performed to form a base 100 on which a recording element and a read element are not formed, as shown in FIG. 3H, The first antiferromagnetic layer 110 having the same height as that of the recording element and the reading element is formed.

Here, the first antiferromagnetic layer 110 may be any one of iridium-manganese alloy, cobalt-nickel oxide alloy, manganese-platinum alloy, ferromanganese, and cobalt oxide, Nm. ≪ / RTI >

Thereafter, the lift-off process is performed to remove the remaining resist pattern 108, thereby forming a first ferromagnetic layer 104a and a nonmagnetic layer 106a on the base 100 as shown in Fig. 3 The first antiferromagnetic layer 110 having the same height as the recording element, the first ferromagnetic layer 104b and the reading element made up of the non-magnetic layer 106b, the recording element, and the reading element is formed. That is, the first antiferromagnetic layer 110 is formed to expose the upper portions of the non-magnetic layers 106a and 106b.

Next, a deposition process such as sputtering, MBE, ALD, PLD, electron beam evaporator or the like is performed to form a recording layer, a reading element, and a first antiferromagnetic layer A second ferromagnetic layer 112 having a predetermined thickness (for example, a thickness ranging from 50 nm to several hundreds of nm) is formed on the first ferromagnetic layer 110.

Here, the second ferromagnetic layer 112 may be a single magnetic material or alloy such as a nickel-iron alloy, cobalt, nickel, iron, or the like.

Then, a deposition process such as sputtering, MBE, ALD, PLD, electron beam evaporator or the like is performed to form a second antiferromagnetic layer 114 on the second ferromagnetic layer 112, The base 100 on the lower side is removed (removed). As a result, as shown in FIG. 3K, a first area (upper area) of the recording element and the read element A) and a second area (B) indicating an upper area where the recording element and the reading element are not formed. The memory device of this embodiment is completed.

Here, the second antiferromagnetic layer 114 may be any one of iridium-manganese alloy, cobalt-nickel oxide alloy, manganese-platinum alloy, ferromanganese, and cobalt oxide, Nm. ≪ / RTI >

[Second Embodiment]

FIG. 10 is a schematic perspective view of a memory device using a Bloch point structure according to a second embodiment of the present invention, and FIG. 11 is a cross-sectional view of a memory device according to a second embodiment of the present invention.

10 and 11, the memory device according to the present embodiment includes a recording element for storing (recording) information in the ferromagnetic layer and a reading element for reading information stored in the ferromagnetic layer separately Unlike the first embodiment described above, there is a difference in the structure in which only one laminated structure composed of the first ferromagnetic layer 104 and the nonmagnetic layer 106 functions as a recording element or a reading element.

That is, the memory device of this embodiment differs only in the structure in which one laminated structure selectively performs the functions of the recording element and the reading element, and the structure and function of the remaining constituent elements are the same as those of the corresponding constituent members of the first embodiment And functions.

Therefore, in order to avoid unnecessary redundant description for the sake of simplification of the specification, the description of the configuration, function, and the like for the remaining constituent members will be omitted.

The method of manufacturing the memory device according to the present embodiment is different from that of the first embodiment only in that the first ferromagnetic layer 104 and the nonmagnetic layer 106 are formed as a single layer structure. Are substantially the same as the respective manufacturing processes of the examples.

Therefore, the description of the series of processes for manufacturing the memory device according to the present embodiment is omitted in order to avoid unnecessary redundant description for simplification of the specification.

Referring again to FIG. 11, the first ferromagnetic layer 104 and the nonmagnetic layer 106 are divided into an upper region (an upper region vertically partitioned by a dotted line boundary) into a first region A, The remaining upper region where the first ferromagnetic layer 104 and the non-magnetic layer 106 are not formed may be partitioned into the second region B except for the first region A, that is, the lower region.

[Third Embodiment]

FIG. 12 is a schematic perspective view of a memory device using a Bloch point structure according to a third embodiment of the present invention, and FIG. 13 is a cross-sectional view of a memory device according to a third embodiment of the present invention.

12 and 13, unlike the first embodiment described above in which two stacked structures functioning as a recording element and a read element are formed at the bottom of the memory device, two stacked structures are formed at the top of the memory device And there is a structural difference in the point of being.

That is, in the memory device of this embodiment, a first ferromagnetic layer 1204 is formed on top of the first antiferromagnetic layer 1202, and two stacked structures 1202 having a predetermined pattern structure on the first ferromagnetic layer 1204 Two nonmagnetic layers 1206a and 1206b and two second ferromagnetic layers 1208a and 1208b are formed.

In addition, the memory device of this embodiment has a structure in which the second antiferromagnetic layer 1210 is formed so as to expose the upper portions of the second ferromagnetic layers 1208a and 1208b horizontally in the form of embedding two stacked structures . 12, reference numeral 1212 denotes a conductor.

13, a lower region (a lower region vertically partitioned by a dotted line) of the second ferromagnetic layers 1208a and 1208b and the non-magnetic layers 1206a and 1206b is divided into a first region A, The first ferromagnetic layers 1208a and 1208b and the remaining lower regions where the nonmagnetic layers 1206a and 1206b are not formed may be partitioned into the second regions B except for the first region A, .

The material of each constituent member forming the memory device of the present embodiment, the thickness range of each constituent member, the manufacturing process of each constituent member, and the like are the same as those of the corresponding constituent members of the memory device of the first embodiment, The thickness range of the member, the manufacturing process of each constituent member, and the like.

Therefore, in order to avoid unnecessary redundant description for the sake of simplification of the specification, description of the material of each constituent member forming the memory device of this embodiment, the thickness range of each constituent member, the manufacturing process of each constituent member, and the like will be omitted.

[Fourth Embodiment]

FIG. 14 is a schematic perspective view of a memory device using a Bloch point structure according to a fourth embodiment of the present invention, and FIG. 15 is a cross-sectional view of a memory device according to a fourth embodiment of the present invention.

14 and 15, the memory device according to the present embodiment includes a recording element for storing (recording) information in the ferromagnetic layer and a reading element for reading information stored in the ferromagnetic layer separately The ferromagnetic layer 1208 and the nonmagnetic layer 1206 are different from the third embodiment in that they are formed of only one laminated structure and function as a recording element or a reading element.

That is, the memory device of this embodiment differs only in the structure in which one laminated structure selectively performs the functions of the recording element and the reading element, and the structure and function of the remaining constituent elements are the same as those of the constituent elements of the corresponding constituent members of the third embodiment And functions.

Therefore, in order to avoid unnecessary redundant description for the sake of simplification of the specification, the description of the configuration, function, and the like for the remaining constituent members will be omitted.

The method of manufacturing the memory device according to the present embodiment is different from that of the first embodiment only in that the ferromagnetic layer 1208 and the nonmagnetic layer 1206 are formed as a single layered structure. Are substantially the same as the respective manufacturing processes of the examples.

Therefore, a description of the series of processes for manufacturing the memory device according to the present embodiment is omitted in order to avoid unnecessary redundant description for the sake of simplification of the specification.

15, the lower region of the second ferromagnetic layer 1208 and the non-magnetic layer 1206 (lower region vertically partitioned by the dotted line) are divided into a first region A, The second ferromagnetic layer 1208 and the remaining lower ferromagnetic layer 1206 in which the nonmagnetic layer 1206 is not formed may be partitioned into the second ferromagnetic layer 1208 except for the ferromagnetic layer A,

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims. It is easy to see that this is possible. That is, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the present invention.

Therefore, the scope of protection of the present invention should be construed in accordance with the following claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

104, 104a, 104b, 1204: first ferromagnetic layer
106, 106a, 106b, 1206a, 1206b: non-magnetic layer
110, 1202: a first antiferromagnetic layer
112, 1208, 1208a, 1208b: a second ferromagnetic layer
114, 1210: a second antiferromagnetic layer
116, 1212: conductor

Claims (27)

In a memory device using a Bloch point structure,
A first ferromagnetic layer having a predetermined pattern structure,
A non-magnetic layer formed on the first ferromagnetic layer,
A first antiferromagnetic layer horizontally formed to embed the first ferromagnetic layer and the nonmagnetic layer to expose an upper portion of the nonmagnetic layer;
A second ferromagnetic layer formed on the non-magnetic layer and the first antiferromagnetic layer,
The second ferromagnetic layer formed on the second ferromagnetic layer
/ RTI >
The memory device comprising:
The upper portion of the first ferromagnetic layer and the nonmagnetic layer are divided into a first region and the upper portion excluding the first region is partitioned into a second region
A memory device using a Bloch point structure. The method according to claim 1,
The first ferromagnetic layer includes a first ferromagnetic layer,
A fixed layer in which the magnetization direction of the magnetic body is fixed,
Wherein the second ferromagnetic layer comprises
A free layer in which a magnetization direction of a magnetic body is changed by an external stimulus and includes a magnetic body, a Bloch point,
A memory device using a Bloch point structure. 3. The method of claim 2,
Wherein the first and second antiferromagnetic layers are formed of
And to prevent the surface magnetization of the second ferromagnetic layer from being changed by the external stimulus
A memory device using a Bloch point structure. 3. The method of claim 2,
The Bloch point
When a current equal to or greater than the threshold intensity is applied to the first region in the vertical direction
A memory device using a Bloch point structure. 3. The method of claim 2,
The Bloch point is moved by an external current,
When the external current of the threshold level or more is applied in the vertical direction, the bloc point in the second region moves to the first region
A memory device using a Bloch point structure. 3. The method of claim 2,
The movement of the Bloch point is,
Wherein the free layer has a first magnetization direction and a second magnetization direction,
A memory device using a Bloch point structure. The method according to claim 6,
The magnetization direction of the free layer,
The upper-most magnetization direction of the thin film of the free layer in the first region is reversed in the upper-lower magnetization direction or the upper-most magnetization direction of the thin film of the free layer in the first region is inverted in the upper-upper magnetization direction
A memory device using a Bloch point structure. 8. The method of claim 7,
The inversion of the magnetization direction of the free layer,
Wherein a resistance is relatively low when the magnetization direction of the pinned layer is equal to a magnetization direction of the free layer and a resistance is relatively high when the magnetization direction of the pinned layer is different from the magnetization direction of the free layer, resistance or tunneling magneto-resistance (TMR).
A memory device using a Bloch point structure. The method according to claim 1,
The first ferromagnetic layer includes a first ferromagnetic layer,
Cobalt, cobalt-iron-boron alloy, cobalt-iron alloy
A memory device using a Bloch point structure. delete The method according to claim 1,
The non-
Non-magnetic metal or insulator
A memory device using a Bloch point structure. 12. The method of claim 11,
The non-
Copper or chrome phosphorus
A memory device using a Bloch point structure. delete The method according to claim 1,
Wherein the second ferromagnetic layer comprises
Nickel-iron alloy, cobalt, nickel, or iron.
A memory device using a Bloch point structure. delete The method according to claim 1,
Wherein each of the first and second antiferromagnetic layers comprises:
Iridium-manganese alloy, cobalt-nickel oxide alloy, manganese-platinum alloy, ferromanganese, and cobalt oxide
A memory device using a Bloch point structure. delete The method according to claim 1,
The first ferromagnetic layer and the non-
One laminated structure functions as a recording element of information, and the other laminated structure functions as a reading element of information
A memory device using a Bloch point structure. The method according to claim 1,
The first ferromagnetic layer and the non-
And is formed of a single laminated structure to function as a recording element of information or a reading element of information
A memory device using a Bloch point structure. The method according to claim 1,
In the predetermined pattern structure,
It can be a circle, a rectangle, or a polygon.
A memory device using a Bloch point structure. Forming a first ferromagnetic layer having a predetermined pattern structure on a base;
Forming a non-magnetic layer on the first ferromagnetic layer;
Forming a first antiferromagnetic layer horizontally formed to fill the first ferromagnetic layer and the nonmagnetic layer and exposing an upper portion of the nonmagnetic layer;
Forming a second ferromagnetic layer on the non-magnetic layer and the first antiferromagnetic layer;
Forming a second antiferromagnetic layer on the second ferromagnetic layer
≪ / RTI > wherein the method comprises the steps of: 22. The method of claim 21,
The first ferromagnetic layer includes a first ferromagnetic layer,
A fixed layer in which the magnetization direction of the magnetic body is fixed,
Wherein the second ferromagnetic layer comprises
A free layer in which a magnetization direction of a magnetic body is changed by an external stimulus and includes a magnetic body, a Bloch point,
A method of fabricating a memory device using a Bloch point structure. 22. The method of claim 21,
The first ferromagnetic layer and the non-
One laminated structure functions as a recording element of information, and the other laminated structure functions as a reading element of information
A method of fabricating a memory device using a Bloch point structure. 22. The method of claim 21,
The first ferromagnetic layer and the non-
And is formed of a single laminated structure to function as a recording element of information or a reading element of information
A method of fabricating a memory device using a Bloch point structure. In a memory device using a Bloch point,
A first antiferromagnetic layer,
A first ferromagnetic layer formed on the first antiferromagnetic layer,
A non-magnetic layer having a predetermined pattern structure formed on the first ferromagnetic layer,
A second ferromagnetic layer formed on the nonmagnetic layer,
And a second antiferromagnetic layer which is horizontally formed to embed the nonmagnetic layer and the second ferromagnetic layer and exposes an upper portion of the second ferromagnetic layer,
/ RTI >
The memory device comprising:
The lower portion of the nonmagnetic layer and the second ferromagnetic layer is partitioned into a first region, and the lower portion excluding the first region is partitioned into a second region
A memory device using a Bloch point structure. 26. The method of claim 25,
The first ferromagnetic layer and the non-
One laminated structure functions as a recording element of information, and the other laminated structure functions as a reading element of information
A memory device using a Bloch point structure. 26. The method of claim 25,
The first ferromagnetic layer and the non-
And is formed of a single laminated structure to function as a recording element of information or a reading element of information
A memory device using a Bloch point structure.

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