KR101946166B1 - Method for manufacturing 3-5 group compound semiconductor based light emitting device - Google Patents

Abstract

The present invention relates to a method for manufacturing an optical device based on a III-V group compound semiconductor, which comprises the steps of: forming a separation layer on a substrate, and forming an epitaxial film for a III-V group optical device on the separation layer; coating a first adhesive on the epitaxial film for the III-V group optical device; bonding a flexible film to the first adhesive; separating the substrate from the epitaxial film for the III-V group optical device by etching the separation layer with the tension of the flexible film and the gravity of the substrate; forming a plurality of optical devices separated from each other by the epitaxial film for the III-V group optical device from which the separation layer and the substrate are removed; bonding a supporter to the plurality of optical devices with a second adhesive; removing the epitaxial film for the III-V group optical device from the first adhesive; and separating each of the plurality of optical devices from the supporter. According to the present invention, the thickness of the optical device is remarkably reduced.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a 3-5 group compound semiconductor based light emitting device,

The present invention relates to a method for manufacturing an optical device based on a Group III-V compound semiconductor, and more particularly, to a method for manufacturing a 3-5 group compound semiconductor optical device by forming a 3-5 group optical element in a separation layer formed on a substrate, The present invention relates to a method for fabricating an optical device based on a Group III-V compound semiconductor, which can significantly reduce manufacturing costs by reusing a substrate.

In general, an optical device consists of a p-type and an n-type semiconductor junction. When a voltage is applied, an optoelectronic device that emits energy corresponding to a bandgap of a semiconductor by a combination of electrons and holes, to be.

The amount of light output from the optical element increases in proportion to the current flowing through the element. Optical devices are used in many fields such as large electronic signboards, traffic lights, and automobile instrument panels because of their high processing speed and low power consumption of semiconductors.

Korean Patent Registration No. 10-1329442 (Patent Document 1) discloses a method for manufacturing a semiconductor device, which comprises sequentially depositing an n-type contact layer, an active layer, and a p-type contact layer on an upper surface of a substrate; Depositing a transparent conductive oxide layer on the p-contact layer, and etching the transparent conductive oxide layer to form a plurality of transparent conductive oxide layers spaced from each other; Etching a part of the p-contact layer, the active layer, and the n-contact layer to expose the n-contact layer in a space between the transparent conductive oxide layer layers spaced apart to form a plurality of mutually spaced laminated structures; Etching the n-contact layer exposed in the space between the plurality of laminated structures to separate the plurality of laminated structures into a plurality of cell structures such that the plurality of laminated structures are present on the upper surface of one n-concective layer; Depositing an insulating layer on the entire upper surface of the substrate except for a part of the upper surface of the transparent conductive oxide layer and the upper surface of the n-contact layer existing in a space between the laminated structures in the separated cell structure; And depositing a conductive material on a portion of the insulating layer excluding the deposition of the insulating layer.

Therefore, in Patent Document 1, as the number of wire bonding necessary for connection is reduced by fabricating an optical element of a cell structure on the upper surface of a substrate and electrically connecting the same, the space required is reduced and the reliability of the package is increased. There is a disadvantage in that it is difficult to manufacture a thin device because the thickness of the optical device is thick because the substrate is integrated with the manufactured optical device and the substrate can not be reused.

: Korean Registered Patent No. 10-1329442

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method and a method for manufacturing a group III-V compound semiconductor optical device capable of reducing the thickness of an optical device and reusing a substrate.

According to an aspect of the present invention, there is provided a method for fabricating an optical element based on Group 3-5 compound semiconductor, comprising the steps of: a) forming a separation layer on a substrate; Forming a thin film; b) coating a first adhesive on the epilayed film for the 3-5 group optical device; c) bonding a flexible film to the first adhesive; d) etching the separation layer using the tension of the flexible film and gravity of the substrate to separate the substrate from the epitaxial film for the 3-5 group optical device; e) forming a plurality of optical elements separated from each other by the epilayed film for the 3-5 group optical device from which the separation layer and the substrate are removed; f) attaching a supporter to the plurality of optical elements as a second adhesive; g) removing the epilayed film for the 3-5 group optical device from the first adhesive; And h) separating each of the plurality of optical elements from the supporter.

In the step (a), the epitaxial layer for the 3-5 group optical device may be obtained by sequentially laminating an N-cladding layer, an active layer and a P-cladding layer based on a 3-5 group compound semiconductor on the separation layer, The P-electrode is formed on the P-type cladding layer, and in the step (e), each of the plurality of optical elements includes a stacked structure of an N-clad layer, an active layer and a P-clad layer; A P-electrode formed on the P-clad layer; An N-electrode formed on the N-cladding layer; A dielectric film formed on an outer peripheral surface of the laminated structure; A reflective film formed on the N-electrode; And a bonding electrode formed on the reflective film.

A method for manufacturing a 3-5 group compound semiconductor based optical device according to an embodiment of the present invention includes the steps of: a) forming a separation layer on a substrate, forming an epilayed film for a 3-5 group optical device in the separation layer, Forming a plurality of optical elements with an epilayed film for a base optical device; b) bonding the flexible film to the plurality of optical elements with a first adhesive; c) etching the separation layer using the tension of the flexible film and the gravity of the substrate to disengage the substrate from the plurality of optical elements; And d) weakening an adhesive force or a bonding force between the first adhesive and the plurality of optical elements, thereby releasing the plurality of optical elements.

Here, in the step a), each of the plurality of optical elements formed on the separation layer may include a stacked structure of an N-clad layer, an active layer, and a P-clad layer; A P-electrode formed on the P-clad layer; A dielectric film formed on an outer peripheral surface of the laminated structure; A reflective film formed on the P-electrode; And a bonding electrode formed on the reflective film.

In addition, the present invention is characterized in that the first adhesive is one of a UV adhesive, wax, paraffin, photoresist, metal, and polyimide.

In addition, the present invention is characterized in that the flexible film is one of a Teflon film, a PET film, and a Capton film.

Further, the present invention is characterized in that the thickness of the flexible film is 10 to 200 mu m.

The etching of the separation layer using the tensile force of the flexible film and the gravity of the substrate may include etching the flexible film to a container containing the etching solution of the separation layer so that the flexible film has a constant curved surface, And the substrate on which the epilayer for the 3-5 group optical device mounted on the flexible film is formed is immersed in the etching solution, and the separation layer is etched by etching with the etching solution.

Here, a reinforcing member having a predetermined weight is mounted on the substrate.

The separation layer may be made of AlAs or GaInP.

When the isolation layer is AlAs, the etching solution is an HF-based etching solution. When the isolation layer is GaInP, the etching solution is an HCl-based etching solution.

When the epilayed film for the 3-5 group optical device is AlGaInP series, the isolation layer is AlAs, and when the epitaxial layer for the 3-5 group optical device is InGaAs series, the isolation layer is GaInP.

According to the present invention, it is possible to significantly reduce the thickness of an optical device by forming a 3-5 group optical element in a separation layer formed on a substrate and then removing the separation layer, and it is possible to reuse the expensive substrate, .

According to the present invention, the separation layer interposed between the substrate and the 3-5 group optical element is efficiently removed, and the substrate is stored in a substantially good quality state without adverse effect on the substrate to be separated from the 3-5 group optical element, Can be improved.

1 is a view for explaining an epilayed film for a 3-5 group optical device for manufacturing an optical device based on a Group 3-5 compound semiconductor according to the present invention,
FIGS. 2A to 2I are cross-sectional views illustrating a method of manufacturing a group III-V compound semiconductor optical device according to a first embodiment of the present invention,
FIGS. 3A to 3D are cross-sectional views illustrating a process for forming a plurality of optical devices separated in the method for manufacturing a group III-V compound semiconductor optical device according to the first embodiment of the present invention,
FIGS. 4A to 4E are cross-sectional views illustrating a method for manufacturing a group III-V compound semiconductor optical device according to a second embodiment of the present invention,
5A and 5B are cross-sectional views for explaining a detailed process of a method for manufacturing a group III-V compound semiconductor optical device according to a second embodiment of the present invention,
6A to 6D are cross-sectional views illustrating a process for forming a plurality of optical devices in a method for manufacturing an optical device based on a Group 3-5 compound semiconductor according to a second embodiment of the present invention,
FIGS. 7A and 7B are views for explaining a first method of removing a substrate by removing a separation layer according to the present invention;
8A and 8B are views for explaining a second method of removing a substrate by removing a separation layer according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS Before describing the embodiments, it is to be understood that the following examples are intended to illustrate one example of implementing the arrangements in the claims, as there may be many ways to implement the arrangements of the claims of the invention I will. Accordingly, the scope of the present invention is not limited by the following examples.

FIG. 1 is a view for explaining an epilayed film for a 3-5 group optical device for producing a 3-5 group compound semiconductor-based optical device according to the present invention.

In the present invention, the separation layer 110 is formed on the substrate 100, the epilayed film 120 for the 3-5 group optical device is formed on the separation layer 110, and the separation layer 110 is removed, The epi-thin film 120 for the 3-5 group optical device is separated from the epi-thin film 120 for the 3-5 group optical device, and then the epi-thin film 120 for the 3-5 group optical device is formed as a plurality of optical devices 250.

That is, referring to FIG. 1, a separation layer 110 and an epitaxial layer 120 for a 3-5-band optical device are sequentially formed on a substrate 100. In this case, the substrate 100 uses an N-GaAs substrate, the epilayers 120 for the 3-5 group optical device include an N-cladding layer 121, an active layer 122, And a P-type cladding layer 123 are laminated in this order, and are epitaxial films based on a group III-V compound semiconductor.

The isolation layer 110 is formed of AlAs or GaInP. That is, the AlAs separation layer 110 is separated using an HF-based etching solution which is very easy to be etched, and the GaInP separation layer 110 is separated using an HCl-based etching solution.

At this time, an AlAs separation layer is used as a separation layer 110 for growing an epitaxial layer for an AlGaInP-based optical device on a GaAs substrate, and a GaInP separation layer is used as a separation layer 110 for growing an epitaxial layer for an InGaAs- do.

FIGS. 2A to 2I are cross-sectional views illustrating a method for manufacturing a group III-V compound semiconductor optical device according to a first embodiment of the present invention.

Referring to FIGS. 2A to 2I, a method for manufacturing an optical device based on a Group III-V compound semiconductor according to a first embodiment of the present invention comprises: forming a separation layer 110 on a substrate 100; 110) to form an epilayed film 120 for the 3-5 group optical device (FIG. 2A).

The epitaxial film 120 for the 3-5 group optical device is formed by sequentially laminating an N-cladding layer 121, an active layer 122 and a P-cladding layer 123 on a separation layer 110, And the P-electrode 130 is formed on the clad layer 123.

The first adhesive 140 is coated on the epilayed film 120 for the 3-5 group optical device (FIG. 2B).

Here, the first adhesive 140 may be a UV adhesive which is easily separated when exposed to UV, a wax or paraffin which is easy to dissolve when heat is applied, a photoresist which is well soluble in acetone, a metal such as In, And polyimide which is easy to separate at the interface by light absorption.

Thereafter, the flexible film 150 is bonded to the first adhesive 140 (Fig. 2C)

Here, the first adhesive 140 may be referred to as a bonding agent for bonding the flexible film 150 to the epilayed film 120 for the 3-5 group optical device, depending on the material used.

The flexible film 150 uses one of a Teflon film, a PET film, and a Capton film, and a transparent film is preferable.

The thickness of the flexible film 150 is preferably 10 to 200 mu m.

The flexible film 150 may be formed of a metal film having a thickness of 10 to 200 mu m through plating with Au, Cu, or the like.

Subsequently, the separation layer 110 is etched using the tension of the flexible film 150 and the gravity of the substrate 100 to remove the epitaxial film 120 for the 3-5 group optical device from the substrate 100 (Figs. 2D and 2E).

2E, the separation layer 110 is removed and the N-cladding layer 121 of the epitaxial thin film 120 for the 3-5 group optical device is exposed.

Subsequently, a plurality of optical devices 250 separated from each other by the separation layer 110 and the epilayed film 120 for the 3-5 group optical device from which the substrate 100 is removed are formed (FIG. 2F).

Here, each of the plurality of optical devices 250 includes a stacked structure of the N-cladding layer 121, the active layer 122, and the P-cladding layer 123; A P-electrode 130 formed on the P-cladding layer 123; An N-electrode 190 formed on the N-cladding layer 121; A dielectric film 180 formed on an outer peripheral surface of the laminated structure; A reflective layer 200 formed on the N-electrode 190; And a bonding electrode 210 formed on the reflective layer 200.

At this time, the dielectric film 180 is formed in order to minimize a light efficiency loss due to current leakage and surface recombination at an optical element interface.

The reflection film 200 may be a metal having a high reflectivity such as a mixture of Au, Ag, Al, Cu, or the like. The reflection film 200 may be a DBR reflective film 200 using a dielectric material such as SiO ₂ , Al ₂ O ₃ , Si ₃ N ₄ , And a reflection film 200 in which a dielectric and a highly reflective metal are combined with each other.

Then, a supporter 230 is bonded to the plurality of optical elements 250 with a second adhesive 220 (FIG. 2G).

Here, the second adhesive 220 has lower adhesive force or bonding force than the first adhesive 140, so that the supporter 230 has a weak binding force with the plurality of optical elements 250.

Next, the epilayed film 120 for the 3-5 group optical device is released from the first adhesive 140 (FIG. 2H).

That is, when the first adhesive 140 is a UV adhesive, UV is irradiated to the interface between the epilayer 120 and the UV adhesive for the 3-5 group optical device, and the UV adhesive and the epilayer 120 for the 3-5 group optical device Is peeled off.

Then, the wax or paraffin is melted by applying heat, the photoresist is dissolved in acetone, the metal is dissolved in the acid, and the polyimide is subjected to interface separation by irradiating a laser.

Then, each of the plurality of optical devices 250 is separated from the supporter 230 (FIG. 2I).

Each of the plurality of optical elements 250 is bonded to the supporter 230 with a weak bonding force by the second adhesive 220 so that the optical element 250 can be coupled to the second adhesive 220 by the holder picking up the optical element 250. [ The state can be released and separated from the supporter 230.

3A to 3D are cross-sectional views illustrating a process of forming a plurality of optical elements separated in the method for manufacturing a group III-V compound semiconductor optical device according to the first embodiment of the present invention.

In the present invention, the epilayed film 120 for the 3-5 group optical device is formed by sequentially laminating the N-cladding layer 121, the active layer 122, and the P-cladding layer 123 on the separation layer 110.

Therefore, in order to form a plurality of optical elements 250 separated in the step of FIG. 2F, first, as shown in FIG. 3A, a plurality of optical elements 250 are formed in the N- Thereby forming a pattern for chip-to-chip isolation of the semiconductor chip 250. This pattern is formed on the entire N-cladding layer 121 and then patterned.

Secondly, the epitaxial films 120 for the 3-5 family members between the chips of the plurality of optical devices 250 are masked by a pattern for isolation to form a plurality of optical device 250 regions (FIG. 3B) .

An N-electrode 190 is formed in the N-type cladding layer 121 of each of the plurality of optical devices 250 and a dielectric film 180 for passivation is formed in each of the plurality of optical devices 250 (Fig. 3C).

Fourth, a reflective film is formed on the N-electrode and a bonding electrode is formed on the reflective film to form a plurality of spaced apart optical devices 250 (FIG. 3D).

4A to 4E are cross-sectional views illustrating a method for fabricating an optical device based on a Group III-V compound semiconductor according to a second embodiment of the present invention.

4A to 4E, a method for fabricating a group III-V compound semiconductor optical device according to a second embodiment of the present invention includes forming a separation layer 110 on a substrate 100, The epilayer 120 for the 3-5 group optical device is formed in the epitaxial layer 120 and the plurality of optical devices 250 is formed using the epitaxial layer 120 for the 3-5 group optical device (FIG. 4A).

Each of the plurality of optical devices 250 formed on the separation layer 110 includes a stacked structure of the N-cladding layer 121, the active layer 122, and the P-cladding layer 123. A P-electrode 130 formed on the P-cladding layer 123; A dielectric film 180 formed on an outer peripheral surface of the laminated structure; A reflective layer 200 formed on the P-electrode 130; And a bonding electrode 210 formed on the reflective layer 200.

Then, the flexible film 150 is bonded to the plurality of optical elements 250 with the first adhesive 140 (FIG. 4B).

Here, the first adhesive 140 uses the first adhesive 140 of the first embodiment.

Subsequently, the separation layer 110 is etched using the tensile force of the flexible film 150 and the gravity of the substrate 100 to separate the substrate 100 from the plurality of optical devices 250 And Fig. 4d).

Thereafter, the adhesive force or bonding force between the first adhesive 140 and the plurality of optical devices 250 is weakened, thereby detaching the plurality of optical devices 250 (FIG. 4E).

In the present invention, when a plurality of optical devices 250 each include a stacked structure of the N-cladding layer 121, the active layer 122, and the P-cladding layer 123 between FIG. 4D and FIG. 4E, The N-electrode 190 is formed on the N-cladding layer 121 as shown in FIG.

When the adhesive force or bonding force between the first adhesive 140 and the plurality of optical devices 250 is weakened in the process of FIG. 4E, the plurality of optical devices 250 are separated one by one as shown in FIG. 5B, Move.

6A to 6D are cross-sectional views illustrating a process for forming a plurality of optical devices in a method for manufacturing a group III-V compound semiconductor optical device according to a second embodiment of the present invention.

In the method for manufacturing an optical device based on a Group 3 or 5 Group compound semiconductor according to the second embodiment of the present invention, forming the plurality of optical devices 250 in the process of FIG. The thin film 120 is divided into a plurality of optical elements 250 and formed.

That is, as shown in FIG. 6A, the epitaxial film 120 for the 3-5 group optical device formed by sequentially laminating the N-cladding layer 121, the active layer 122, and the P- To form a pattern for chip-to-chip isolation of a plurality of optical devices 250.

6B, a plurality of photonic devices 250 are formed by etching the epitaxial film 120 for a 3-5-band optical device between the chips of the plurality of optical devices 250 by masking with a pattern for isolation .

6C, a P-electrode 130 is formed on the P-type cladding layer 123 of each of the plurality of optical device 250 regions and a dielectric film 180 for passivation is formed on each of the plurality of optical device 250 regions. ).

A reflective layer 200 is formed on the P-electrode 130 and a bonding electrode 210 is formed on the reflective layer 200 to form a plurality of spaced apart optical devices 250 (FIG. 6D).

FIGS. 7A and 7B are views for explaining a first method of removing a substrate by removing a separation layer according to the present invention. FIGS. 8A and 8B are views for explaining a method for removing a substrate according to the present invention, Fig.

As described above, in the present invention, the separation layer 110 is removed using the tensile force of the flexible film 150 and the gravity of the substrate 100.

That is, the substrate 100 (wafer) on which the epitaxial film 120 for the 3-5 group optical device mounted on the flexible film 150 is formed in the container (or bath) 300 containing the etching solution of the separation layer 110, And the separation layer 110 is etched away with an etching solution.

7A and 7B, the outer side of the separation layer 110 is etched, and the flexible film 150 is adhered to the flexible film 150 by the weight of the substrate 100 and the tension of the flexible film 150, And the etching solution is introduced between the substrate 100 and the epilicate film 120 for the 3-5 family optoelectronic device so that the etching of the isolation layer 110 proceeds rapidly So that the separation layer 110 is etched as a whole.

At this time, the flexible film 150 is fixed to the outer periphery of the container 300 so that the flexible film 150 has a certain curved surface, so that the flexible film 150 generates tension.

For this, the length of the flexible film 150 is designed to be larger than the width of the container 300. Of course, the size of the container 300 is designed such that the epilayed film 120 for the 3-5 group optical device is contained in the etching solution.

Here, the length of the flexible film 150 is preferably smaller than three times the width of the container 300.

8A and 8B, a stiffener 500 having a predetermined weight is mounted on the substrate 100 in order to increase the effect of expanding the epilayer 120 for a 3-5 band optical device and the substrate 100 can do.

The reinforcing material 500 may be attached to the opposite surface of the substrate 100 on which the epilayer film 120 for the 3-5 group optical device is formed by a method such as adhesion or adhesion or by attaching the reinforcing material 500 to the substrate 100) can be mounted on the jig.

The substrate 100 thus separated can be reused.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limited to the embodiments set forth herein. Various changes and modifications may be made by those skilled in the art.

100: substrate 110: separation layer
120: Epib thin film for Group 3-5 group optical device 121: N-clad layer
122: active layer 123: P-cladding layer
130: P-electrode 140, 220: Adhesive
150: Flexible film 180: Dielectric film
190: N-electrode 200:
210: bonding electrode 230: supporter
250: optical element 300: container
500: Stiffener

Claims (12)

a) forming an isolation layer on a substrate, and forming an epilayed film for a 3-5 group element in the isolation layer;
b) coating a first adhesive on the epilayed film for the 3-5 group optical device;
c) bonding a flexible film to the first adhesive;
d) etching the separation layer using the tension of the flexible film and gravity of the substrate to separate the substrate from the epitaxial film for the 3-5 group optical device;
e) forming a plurality of optical elements separated from each other by the epilayed film for the 3-5 group optical device from which the separation layer and the substrate are removed;
f) attaching a supporter to the plurality of optical elements as a second adhesive;
g) removing the epilayed film for the 3-5 group optical device from the first adhesive; And
h) separating each of the plurality of optical elements from the supporter,
Etching the separating layer using the tensile force of the flexible film and the gravity of the substrate,
Fixing the flexible film to a container in which the etching solution of the separation layer is contained so that the flexible film has a constant curved surface, immersing a substrate on which the epilayer for a 3-5 group optical device mounted on the flexible film is formed in the etching solution, And removing the separation layer by etching with an etching solution to remove the separation layer. The method according to claim 1,
In the step (a), the epitaxial layer for the 3-5 group optical device sequentially stacks an N-cladding layer, an active layer and a P-cladding layer based on the 3-5 group compound semiconductor on the isolation layer, And a P-electrode is formed on the clad layer,
In the step e), each of the plurality of optical elements includes a stacked structure of an N-clad layer, an active layer, and a P-clad layer; A P-electrode formed on the P-clad layer; An N-electrode formed on the N-cladding layer; A dielectric film formed on an outer peripheral surface of the laminated structure; A reflective film formed on the N-electrode; And a bonding electrode formed on the reflective layer. a) forming a separation layer on a substrate, forming an epitaxial film for a 3-5 group optical element in the separation layer, and forming a plurality of optical elements using the epitaxial layer for the 3-5 group optical element;
b) bonding the flexible film to the plurality of optical elements with a first adhesive;
c) etching the separation layer using the tension of the flexible film and the gravity of the substrate to disengage the substrate from the plurality of optical elements; And
d) removing the plurality of optical elements by weakening an adhesive force or bonding force between the first adhesive and the plurality of optical elements,
Etching the separating layer using the tensile force of the flexible film and the gravity of the substrate,
Fixing the flexible film to a container in which the etching solution of the separation layer is contained so that the flexible film has a constant curved surface, immersing a substrate on which the epilayer for a 3-5 group optical device mounted on the flexible film is formed in the etching solution, And removing the separation layer by etching with an etching solution to remove the separation layer. The method of claim 3,
In the step a), each of the plurality of optical elements formed on the separation layer may include a stacked structure of an N-clad layer, an active layer, and a P-clad layer; A P-electrode formed on the P-clad layer; A dielectric film formed on an outer peripheral surface of the laminated structure; A reflective film formed on the P-electrode; And a bonding electrode formed on the reflective layer. The method according to claim 1 or 3,
Wherein the first adhesive is one of a UV adhesive, a wax, a paraffin, a photoresist, a metal, and a polyimide. The method according to claim 1 or 3,
Wherein the flexible film is one of a Teflon film, a PET film, and a Capton film. The method according to claim 1 or 3,
Wherein the flexible film has a thickness of 10 to 200 mu m. delete The method according to claim 1 or 3,
Wherein a stiffener having a predetermined weight is mounted on the substrate. The method according to claim 1 or 3,
Wherein the isolation layer is AlAs or GaInP. 11. The method of claim 10,
When the isolation layer is AlAs, the etching solution is an HF-based etching solution,
Wherein the etching solution is an HCl-based etching solution when the separation layer is GaInP. The method according to claim 1 or 3,
Wherein the separation layer is AlAs when the epilayed film for the 3-5 group optical device is AlGaInP series and the separation layer is GaInP when the epilayed film for the 3-5 group optical device is an InGaAs series. A method of manufacturing a semiconductor-based optical device.

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