KR101940170B1 - Composition forforming electrode, electrode manufactured using the same and solar cell - Google Patents
Composition forforming electrode, electrode manufactured using the same and solar cell Download PDFInfo
- Publication number
- KR101940170B1 KR101940170B1 KR1020150147359A KR20150147359A KR101940170B1 KR 101940170 B1 KR101940170 B1 KR 101940170B1 KR 1020150147359 A KR1020150147359 A KR 1020150147359A KR 20150147359 A KR20150147359 A KR 20150147359A KR 101940170 B1 KR101940170 B1 KR 101940170B1
- Authority
- KR
- South Korea
- Prior art keywords
- glass frit
- electrode
- composition
- boron
- tellurium
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 48
- 239000011521 glass Substances 0.000 claims abstract description 56
- 239000000843 powder Substances 0.000 claims abstract description 36
- 229910052796 boron Inorganic materials 0.000 claims abstract description 31
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 26
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 239000011575 calcium Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000007822 coupling agent Substances 0.000 claims description 3
- 239000013530 defoamer Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 239000004014 plasticizer Substances 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012756 surface treatment agent Substances 0.000 claims description 3
- 239000013008 thixotropic agent Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000326 ultraviolet stabilizing agent Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 15
- 238000010304 firing Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000012963 UV stabilizer Substances 0.000 description 1
- -1 acrylic ester Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000010022 rotary screen printing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Wherein the glass frit comprises an electrically conductive powder, a tellurium (Te) -lithium (Li) -boron (B) glass frit and an organic vehicle, wherein the glass frit comprises 5 to 30 mol% boron (B) ≪ / RTI >
Description
A composition for forming electrodes, an electrode made therefrom, and a solar cell.
Solar cells generate electrical energy by using photoelectric effect of pn junction that converts photon of sunlight into electricity. The solar cell is formed with a front electrode and a rear electrode on a semiconductor wafer or substrate upper and lower surfaces, respectively, where a pn junction is formed. The photovoltaic effect of the pn junction is induced in the solar cell by the sunlight incident on the semiconductor wafer, and the electrons generated from the pn junction provide a current flowing to the outside through the electrode.
The electrode of such a solar cell can be formed in a predetermined pattern on the surface of the wafer by applying, patterning and firing the composition for electrode formation.
In order to improve the conversion efficiency of the solar cell, it is necessary to improve the contact property with the substrate to minimize the contact resistance (Rc) and the series resistance (Rs), or to adjust the line width of the screen mask a fine line is formed to increase the short-circuit current I sc .
In order to minimize such contact resistance, the antireflection film on the substrate surface must be etched by the glass frit in the electrode forming composition during firing so that the electrode and the emitter are in sufficient contact. At this time, the emitter of the substrate surface is damaged due to the reaction proceeding at the time of firing, which causes the Voc drop. In particular, the higher the firing temperature, the greater the etching reactivity and thus the larger the Voc drop.
Accordingly, there is a demand for a composition for forming an electrode that minimizes damage to a pn junction (pn junction) and sufficiently lowers the contact resistance even at a low temperature.
One embodiment of the present invention is to provide a composition for forming an electrode capable of improving the efficiency of a solar cell by sufficiently lowering the contact resistance even at a low firing temperature.
Another embodiment provides an electrode made of the electrode forming composition.
Another embodiment provides a solar cell comprising the electrode.
One embodiment includes a conductive powder, a tellurium (Te) -lithium (Li) -boron (B) glass frit and an organic vehicle, wherein the glass frit contains boron (B) And 30 mol% of the total amount of the composition.
The glass frit may comprise 10 to 30 mol% of boron in the total glass frit.
The glass frit may comprise from 40 to 90 mol% of tellurium in the total glass frit.
The glass frit may contain 1 to 30 mol% of lithium in the entire glass frit.
The molar ratio of tellurium to lithium in the glass frit may range from 2: 1 to 80: 1.
The glass frit may further contain 1 to 20 mol% of zinc (Zn) in the entire glass frit.
The glass frit may be made of at least one selected from the group consisting of tungsten (W), phosphorus (P), silicon (Si), magnesium (Mg), cerium, strontium (Sr), molybdenum (Mo), titanium (Ti) (In), vanadium (V), barium, nickel, copper, sodium, potassium, antimony, germanium, gallium, calcium At least one selected from calcium (Ca), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn) and aluminum (Al).
The glass frit may have an average particle diameter (D50) of 0.1 to 10 mu m.
Wherein the composition for electrode formation comprises 60 to 95% by weight of the conductive powder; 0.5 to 20% by weight of the tellurium (Te) -lithium (Li) -boron (B) glass frit; And an amount of the organic vehicle balance.
The conductive powder may have an average particle diameter (D50) of 0.1 to 10 mu m.
The composition for electrode formation may further include at least one additive selected from a surface treatment agent, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, an ultraviolet stabilizer, an antioxidant and a coupling agent.
Another embodiment provides an electrode made of the electrode forming composition.
Another embodiment provides a solar cell comprising the electrode.
There is provided a composition for forming an electrode capable of improving the efficiency of a solar cell by sufficiently lowering the contact resistance even at a low firing temperature.
1 is a schematic view briefly showing a structure of a solar cell according to an embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. It will be understood that when an element such as a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the element directly over another element, Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.
One embodiment includes a conductive powder, a tellurium (Te) -lithium (Li) -boron (B) glass frit and an organic vehicle, wherein the glass frit contains 5 to 30 mole% of boron (B) And a composition for forming an electrode.
Hereinafter, the present invention will be described in detail.
The electrode forming composition may use a metal powder as the conductive powder. The metal powder may be at least one selected from the group consisting of Ag, Au, Pd, Pt, Ru, Rh, Os, Ir, (Ti), niobium (Nb), tantalum (Ta), aluminum (Al), copper (Cu), nickel (Ni), molybdenum (Mo), vanadium (V), zinc (Zn) (Y), Co, Zr, Fe, W, Sn, Cr, Mn, and the like.
The conductive powder may be a powder having a particle size of nano size or micro size, for example, a conductive powder having a size of several tens to several hundreds of nanometers, a conductive powder of several to several tens of micrometers, Conductive powder may be mixed and used.
The conductive powder may have a spherical shape, a plate shape, or an amorphous shape. The average particle diameter (D50) of the conductive powder is preferably 0.1 to 10 mu m, more preferably 0.5 to 5 mu m. The average particle diameter was measured using a 1064LD model manufactured by CILAS after distributing conductive powder to isopropyl alcohol (IPA) by ultrasonic wave at room temperature (20 to 25) for 3 minutes. Within this range, the contact resistance and line resistance can be lowered.
The conductive powder may preferably include silver (Ag) powder.
The conductive powder may be contained in an amount of 60 to 95% by weight, preferably 70 to 90% by weight based on the total weight of the electrode forming composition. In this range, it is possible to prevent the conversion efficiency from being lowered by increasing the resistance, and to prevent the paste from becoming difficult due to the relative reduction in the amount of the organic vehicle.
The tellurium (Te) -lithium-boron (B) glass frit is obtained by etching the antireflection film during the firing process of the composition for electrode formation and melting the conductive powder particles to lower the resistance To thereby improve the adhesion between the conductive powder and the wafer and to soften the sintered powder to lower the firing temperature.
Increasing the area of the solar cell in order to increase the efficiency of the solar cell may increase the contact resistance of the solar cell, so that the damage to the pn junction should be minimized and the series resistance should be minimized. Further, since the variation range of the firing temperature increases with the increase of wafers of various sheet resistances, it is preferable to use glass frit which can sufficiently secure thermal stability even at a wide firing temperature.
Accordingly, in one embodiment, a tellurium (Te) -lithium (Li) -boron (B) glass frit containing a certain amount of boron (B) is used to sufficiently secure the thermal stability at a wide baking temperature use.
The glass frit basically does not contain lead (Pb) or bismuth (Bi). Herein, it is meant that each element is contained as a byproduct, not a main component, in an amount of 0.1 mol% or less in the total glass frit.
The above-mentioned tellurium (Te) -Li (boron) -based glass has an advantage that it is eco-friendly because it is lead-free glass that does not contain lead, and when it contains bismuth (Bi) Can be solved.
The glass frit may comprise from 5 to 30 mol%, for example from 10 to 30 mol%, boron in the total glass frit. Within the above range, the thermal stability and the contact resistance of the composition for electrode formation can be sufficiently secured.
The glass frit may contain tellurium in an amount of 40 to 90 mol%, for example, 50 to 90 mol%, and lithium in an amount of 1 to 30 mol%, specifically 1 to 20 mol% in the entire glass frit. The molar ratio of tellurium and lithium in the tellurium (Te) -lithium (Li) -boron (B) glass frit may be in the range of 2: 1 to 80: 1. The efficiency of the solar cell can be improved in the above range and the adhesion strength of the electrode pattern can be secured at the same time .
The glass frit may further include zinc (Zn), and may be contained in an amount of 1 to 20 mol% of the entire glass frit. The contact resistance of the electrode can be further improved in the above range.
The glass frit may be formed of a material selected from the group consisting of tungsten (W), phosphorus (P), silicon (Si), magnesium (Mg), cerium (Ce), strontium (Sr), molybdenum (Mo), titanium (Ti) Gallium (Ga), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), antimony (Sb) , At least one selected from calcium (Ca), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn) and aluminum (Al).
The tellurium (Te) -lithium (Li) -boron (B) glass frit may be derived from water of the metal element described above using conventional methods. For example, a mixture prepared by mixing tellurium, lithium and boron and / or an oxide of the above-mentioned metal element in a specific composition may be melted, quenched and then ground again. The mixing process may be performed using a ball mill or a planetary mill. The melting process may be performed at 700 to 1300 ° C, and the quenching process may be performed at room temperature (20 to 25 ° C). The pulverization process may be performed by a disk mill, a planetary mill or the like, but is not limited thereto.
In one embodiment, the tellurium (Te) -lithium (Li) -boron (B) glass frit may be a homogenous powder.
In another embodiment, the tellurium (Te) -lithium (Li) -boron (B) glass frit may be a combination of two or more powders, wherein each powder may be individually a homogeneous powder.
The total composition and content of the combination of the two or more powders may fall within the ranges described above. For example, a tellurium (Te) -lithium (Li) -boron (B) glass frit may comprise a combination of two or more different powders, and individually, each of these powders may have a different composition, , But the overall composition and content of such a combination of powders may fall within the ranges described above.
In another embodiment, the tellurium (Te) -lithium (Li) -boron (B) glass frit contains some elements that are not all selected from tellurium (Te), lithium (Li) and boron And a second powder comprising some of the elements not all selected from tellurium (Te), lithium (Li) and boron (B). The total composition and the content of the combination of the first powder and the second powder may fall within the ranges described above.
The tellurium (Li) -boron (B) glass frit may have an average particle diameter (D50) of 0.1 to 10 mu m, and may be contained in an amount of 0.5 to 20 wt% based on the total weight of the composition for electrode formation . The bonding strength of the electrode pattern can be improved within a range that does not impair the electrical characteristics of the electrode within the above range.
The form of the tellurium (Te) -lithium (Li) -boron (B) glass frit may be spherical or amorphous.
The organic vehicle imparts suitable viscosity and rheological properties to the paste composition through mechanical mixing with inorganic components of the electrode-forming composition. The organic vehicle comprises an organic binder and a solvent.
The organic binder may be an acrylate-based or a cellulose-based resin, and ethylcellulose is generally used. However, it is preferable to use a mixture of ethylhydroxyethylcellulose, nitrocellulose, a mixture of ethylcellulose and phenol resin, an alkyd resin, a phenol resin, an acrylic ester resin, a xylene resin, a polybutene resin, a polyester resin, Based resin, a wood rosin, or a polymethacrylate of an alcohol may be used.
The weight average molecular weight (Mw) of the organic binder may be 30,000 to 200,000 g / mol, and preferably 40,000 to 150,000 g / mol. When the weight average molecular weight (Mw) is within the above range, an excellent effect can be obtained in view of printability.
The solvent includes, for example, hexane, toluene, texanol, methyl cellosolve, ethyl cellosolve, cyclohexanone, butyl cellosolve, aliphatic alcohol, (Diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol terpineol, methyl ethyl ketone, benzyl alcohol, gamma-butyrolactone, ethyl lactate, and the like, or a mixture of two or more thereof.
The organic vehicle may be used in an amount of 1 to 30% by weight, preferably 5 to 15% by weight based on the total weight of the composition for forming an electrode. It is possible to improve the adhesion strength between the electrode pattern and the substrate in the above-mentioned range and to ensure excellent continuous printing property.
In addition to the above-described components, the composition for electrode formation may further include conventional additives as needed in order to improve flow characteristics, process characteristics, and stability. The additive may be used alone or in admixture of two or more, such as a surface treatment agent, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant and a coupling agent. These are added in an amount of 0.1 to 5% by weight based on the total weight of the composition for electrode formation, but they can be changed as needed. The content of the additive may be selected in consideration of the printing property, dispersibility, and storage stability of the electrode-forming composition.
According to another embodiment, there is provided an electrode formed from the electrode forming composition.
The electrode can be formed in a predetermined pattern on the surface of the wafer by applying, patterning and firing the electrode forming composition. The electrode forming composition may be applied by various methods such as screen printing, gravure offset method, rotary screen printing method, or lift-off method, but is not limited thereto. The coated electrode forming composition preferably has a certain pattern and preferably has a thickness of 10 to 40 탆.
The baking process of the patterned composition for electrode formation will be described in detail in a manufacturing process of the solar cell.
According to another embodiment, there is provided a solar cell including the electrode. A solar cell according to an embodiment will be described with reference to FIG.
1 is a schematic view briefly showing a structure of a solar cell according to one embodiment.
1, a composition for electrode formation is printed and fired on a
In addition, a preparation step for the front electrode can be performed by printing a composition for electrode formation on the entire surface of the
Hereinafter, the present invention will be described in more detail by way of examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.
Preparation of composition for electrode formation
Example 1 to 10 and Comparative Example 1 to 5
0.5% by weight of an organic binder (Dow chemical company, STD4) (Mw = 50,000 g / mol) was sufficiently dissolved in 7% by weight of solvent Tessonol (Eastman) at 60 캜, and spherical silver powder 2 wt% of glass frit, 0.2 wt% of a dispersant (BYK-chemie, BYK-102), and a stabilizer (Elementis Co., Thixatrol Co., ST) were added and mixed and dispersed with a 3-roll milling machine to prepare compositions for forming electrodes according to Examples 1 to 10 and Comparative Examples 1 to 5.
Evaluation of efficiency of solar cell
After texturing the entire surface of a wafer (p-type wafer doped with boron), an n + layer is formed of POCl 3 , and a multi crystalline silicon nitride (SiNx: H) Wafers) were screen-printed on the entire surface of the substrate in the same manner as in Examples 1 to 10 and Comparative Examples 1 to 5, and dried at 300 to 400 ° C using an infrared ray drying furnace. Thereafter, aluminum paste was printed on the rear surface of the wafer and dried in the same manner. The cells thus formed were sintered at 850 ° C, 900 ° C, and 980 ° C for 40 seconds, respectively, using a belt-type sintering furnace to prepare test cells.
The efficiency of the fabricated test cell was measured using a solar cell efficiency measuring device (Passan, CT-801). The results are shown in Table 2 below.
(mV)
(mΩ)
(%)
(mV)
(mΩ)
(%)
(mV)
(mΩ)
(%)
Referring to Table 2, it can be seen that the solar cell manufactured using the composition for electrode formation according to Examples 1 to 10 has an improved open circuit voltage and minimizes contact resistance while improving the efficiency of the solar cell. On the other hand, in the case of Comparative Examples 1 to 4 in which boron (B) was not used, the efficiency of the solar cell was lowered due to an increase in contact resistance. In Comparative Example 5 where boron (B) (Voc) and contact resistance (Rs) increased, the efficiency of the solar cell was lowered.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
A tellurium (Te) -lithium (Li) -boron (B) glass frit;
An organic vehicle,
Wherein the glass frit contains boron (B) in an amount of 5 to 30 mol% of the total glass frit, and does not contain lead and bismuth.
Wherein the glass frit comprises boron in an amount of 10 to 30 mole percent of the total glass frit.
Wherein the glass frit comprises 40 to 90 mol% of tellurium and 1 to 30 mol% of lithium in the total glass frit.
Wherein the molar ratio of tellurium to lithium in the glass frit is in the range of 2: 1 to 80: 1.
Wherein the glass frit further comprises 1 to 20 mol% of zinc (Zn) in the total glass frit.
The glass frit may be made of at least one selected from the group consisting of tungsten (W), phosphorus (P), silicon (Si), magnesium (Mg), cerium, strontium (Sr), molybdenum (Mo), titanium (Ti) (In), vanadium (V), barium, nickel, copper, sodium, potassium, antimony, germanium, gallium, calcium Further comprising at least one selected from the group consisting of Ca, arsenic, cobalt, zirconium, manganese and aluminum.
Wherein the glass frit has an average particle diameter (D50) of 0.1 to 10 mu m.
Wherein the composition for electrode formation comprises 60 to 95% by weight of the conductive powder; 0.5 to 20% by weight of the tellurium (Te) -lithium (Li) -boron (B) glass frit; And an amount of the remaining organic vehicle.
Wherein the conductive powder has an average particle diameter (D50) of 0.1 to 10 占 퐉.
Wherein the composition for electrode formation further comprises at least one additive selected from a surface treatment agent, a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, an ultraviolet stabilizer, an antioxidant and a coupling agent.
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| JP2014028740A (en) | 2012-04-17 | 2014-02-13 | Heraeus Precious Metals North America Conshohocken Llc | Tellurium inorganic reaction system for thick electroconductive film paste for solar cell junction |
| JP2015122177A (en) * | 2013-12-21 | 2015-07-02 | 株式会社ノリタケカンパニーリミテド | Conductive paste composition for solar battery and method for producing the same |
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| KR101593754B1 (en) * | 2013-11-12 | 2016-02-12 | 제일모직주식회사 | Glass frit, composition for forming solar cell electrode comprising the same, and electrode prepared using the same |
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| JP2014028740A (en) | 2012-04-17 | 2014-02-13 | Heraeus Precious Metals North America Conshohocken Llc | Tellurium inorganic reaction system for thick electroconductive film paste for solar cell junction |
| JP2015122177A (en) * | 2013-12-21 | 2015-07-02 | 株式会社ノリタケカンパニーリミテド | Conductive paste composition for solar battery and method for producing the same |
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