KR101929473B1 - Apparatus and method of processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method which can easily maintain the maintenance of the substrate heating means and can increase the efficiency of use of the process gas. The substrate processing apparatus according to the present invention includes a substrate processing apparatus A substrate processing apparatus for depositing a thin film on an upper surface of a substrate by injecting a process gas, the substrate processing apparatus comprising: a substrate supporting unit for supporting and moving at least one substrate; A substrate temperature regulator installed in the process chamber to regulate the temperature of the substrate moved by the substrate support to emit a substrate temperature control source in the process space; And a gas injection unit installed in the process chamber so as to be spatially separated from the substrate temperature control unit and injecting a process gas into the substrate moved by the substrate support unit.

Description

[0001] APPARATUS AND METHOD OF PROCESSING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus and a substrate processing method for depositing a thin film on a substrate.

Generally, in order to manufacture a solar cell, a semiconductor device, a flat panel display, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on the surface of the substrate. For this purpose, A semiconductor manufacturing process such as a thin film deposition process, a photolithography process for selectively exposing a thin film using a photosensitive material, and an etching process for forming a pattern by selectively removing a thin film of an exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

A plasma processing apparatus using a plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, and a plasma etching apparatus for patterning a thin film by etching.

1 is a schematic view for explaining a general substrate processing apparatus.

Referring to FIG. 1, a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas injection means 40.

The chamber 10 provides a processing space for the substrate processing process. At this time, both side bottom surfaces of the chamber 10 communicate with the pumping port 12 for exhausting the process space.

Plasma electrode 20 is installed on top of chamber 10 to seal process space.

One side of the plasma electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through a matching member 22. At this time, the RF power supply 24 generates and supplies RF power to the plasma electrode 20.

In addition, the central portion of the plasma electrode 20 communicates with the gas supply pipe 26 that supplies the process gas for the substrate processing process.

The matching member 22 is connected between the plasma electrode 20 and the RF power supply 24 to match the load impedance and the source impedance of the RF power supplied from the RF power supply 24 to the plasma electrode 20. [

The susceptor 30 is installed inside the chamber 10 to support a plurality of substrates W to be loaded from the outside. The susceptor 30 is an opposing electrode facing the plasma electrode 20 and is electrically grounded through an elevation shaft 32 for elevating and lowering the susceptor 30.

A substrate heating means (not shown) for heating the supported substrate W is built in the susceptor 30. The substrate heating means heats the susceptor 30 to heat the susceptor 30 The lower surface of the supported substrate W is heated.

The elevating shaft 32 is vertically elevated and lowered by an elevating device (not shown). At this time, the lifting shaft 32 is surrounded by the bellows 34 that seals the lifting shaft 32 and the bottom surface of the chamber 10.

The gas injection means 40 is installed below the plasma electrode 20 so as to face the susceptor 30. A gas diffusion space 42 through which the process gas supplied from the gas supply pipe 26 passing through the plasma electrode 20 is diffused is formed between the gas injection means 40 and the plasma electrode 20. The gas injection means 40 uniformly injects the process gas into the entire portion of the process space through the plurality of gas injection holes 44 communicated with the gas diffusion space 42.

Such a general substrate processing apparatus loads substrate W onto susceptor 30 and then heats substrate W loaded on susceptor 30 and applies a predetermined process to the process space of chamber 10 A predetermined thin film is formed on the substrate W by supplying RF power to the plasma electrode 20 while spraying gas to form a plasma. The process gas injected into the process space during the thin film deposition process flows toward the edge of the susceptor 30 and is discharged to the outside of the process chamber 10 through the pumping port 12 formed on both side surfaces of the process chamber 10. [ do.

However, the conventional substrate processing apparatus has the following problems.

First, since the substrate heating means for heating the substrate is built in the susceptor, maintenance of the substrate heating means is not easy.

Second, since the process gas is injected into the entire upper region of the susceptor, the amount of the process gas used increases, and the use efficiency of the process gas is lowered.

Third, uniformity of the thin film material deposited on the substrate is uneven due to unevenness of the plasma density formed in the entire upper region of the susceptor, and it is difficult to control the film quality of the thin film material.

Therefore, there is a need for a substrate processing apparatus and a substrate processing method that can easily maintain the maintenance of the substrate heating means and increase the efficiency of use of the process gas.

SUMMARY OF THE INVENTION The present invention provides a substrate processing apparatus and a substrate processing method which can easily maintain the temperature of the substrate temperature adjusting means and can increase the use efficiency of the process gas.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method in which a uniform thin film is deposited on a substrate and the film quality of the thin film is easily controlled.

According to another aspect of the present invention, there is provided a substrate processing apparatus for depositing a thin film on an upper surface of a substrate by spraying a process gas onto the substrate in a process space provided in the process chamber, A substrate support for moving the substrate support; A substrate temperature regulator installed in the process chamber to locally emit a substrate temperature control source in the process space to heat an upper surface of the substrate moved by the substrate supporter; And a gas injection unit installed in the process chamber so as to be spatially separated from the substrate temperature control unit and injecting a process gas into the substrate moved by the substrate support unit.

The process chamber comprising: a chamber body defining the process space and supporting the substrate support; And a chamber lid covering an upper portion of the chamber body, wherein each of the substrate temperature regulating portion and the gas injecting portion is detachably mounted to the chamber lid so as to be spatially separated from the chamber lid.

Wherein the substrate temperature controller emits a substrate temperature control source to each of a plurality of temperature control areas defined to be spatially separated between the chamber lid and the substrate support, And injecting the process gas into each of the plurality of gas injection regions.

Wherein the substrate temperature adjusting unit includes a plurality of substrate temperature adjusting modules detachably mounted on the chamber lid so as to correspond to each of the plurality of temperature adjusting areas, wherein each of the plurality of substrate temperature adjusting modules has the same or different areas .

Wherein each of the plurality of substrate temperature control modules is mounted on the chamber lid so as to be spaced apart from the upper surface of the substrate at a different interval, and each of the plurality of substrate temperature control modules has a plurality of partition areas having the same or different areas; And a substrate temperature control source member individually disposed in the plurality of divided regions.

Wherein each of the plurality of divided regions is spaced at the same or different intervals from the upper surface of the substrate or the plurality of divided regions are spaced at different intervals from the upper surface of the substrate, And is closer to the substrate from the inside of the substrate adjacent to the central portion of the substrate supporting portion toward the outside adjacent to the edge portion of the substrate supporting portion.

According to another aspect of the present invention, there is provided a substrate processing method including: depositing a thin film on an upper surface of a substrate by spraying a process gas onto the substrate in a process space provided in the process chamber including a chamber body and a chamber lid covering the chamber body; The method comprising: placing at least one substrate on a substrate support; Locally discharging a substrate temperature control source to the process space using a substrate temperature regulator provided in the chamber lid; And locally spraying the process gas on the substrate support using a gas injection unit installed in the chamber lid so as to be spatially separated from the substrate temperature control unit, The substrate temperature control unit and the lower portion of each of the gas spray units alternately pass through the substrate temperature adjusting unit and the process gas.

Wherein the substrate temperature control source is emitted in each of a plurality of temperature regulation regions defined to be spatially separated on the substrate support, and wherein the process gas is injected into each of a plurality of gas injection zones defined between the plurality of temperature regulation zones .

The plurality of temperature control regions may have the same or different areas. Wherein the temperature of the substrate heated by the substrate temperature adjusting source is set to a temperature outside the substrate adjacent to the central portion of the substrate supporting portion and an outer side adjacent to the edge portion of the substrate supporting portion As shown in FIG.

The substrate processing apparatus and the substrate processing method using the same according to the present invention have the following effects.

First, by heating the upper surface of the substrate through a plurality of substrate temperature control modules detachably mounted on the chamber lid, the heating efficiency of the substrate can be increased and maintenance of the substrate temperature control module can be facilitated.

Second, the efficiency of use of the process gas can be improved by locally injecting the process gas through the plurality of gas injection modules mounted so as to be spatially separated from the chamber lid. It is also possible to deposit the uniform thin film on the substrate and easily control the film quality can do.

1 is a schematic view for explaining a general substrate processing apparatus.
2 is a perspective view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.
3 is a plan view schematically showing a substrate processing apparatus according to the first embodiment of the present invention.
4 is a cross-sectional view schematically showing a cross section of the line II 'shown in FIG.
5 is a cross-sectional view schematically showing a cross section taken along a line II-II 'shown in FIG.
6 is a cross-sectional view schematically showing a cross section taken along a line III-III 'shown in FIG.
FIGS. 7 to 10 are views for explaining various embodiments of the substrate temperature control source arrangement structure of the respective substrate temperature control modules shown in FIG. 2 and FIG. 3. FIG.
FIGS. 11 and 12 are views for explaining respective substrate temperature control modules according to another embodiment shown in FIGS. 2 and 3. FIG.
FIGS. 13 to 15 are views for explaining embodiments of the temperature detector disposed in each substrate temperature adjusting module shown in FIGS. 2 and 3. FIG.
FIG. 16 is a cross-sectional view taken along the line III-III 'shown in FIG. 3, illustrating the gap between the substrate temperature control module and the substrate.
FIGS. 17 and 18 are cross-sectional views taken along the line II 'shown in FIG. 3, illustrating a modified embodiment of the substrate temperature adjustment module.
19 is a plan view schematically showing a substrate processing apparatus according to a second embodiment of the present invention.
FIG. 20 is a cross-sectional view taken along line IV-IV 'of FIG. 19, illustrating a substrate processing apparatus according to a third embodiment of the present invention.
21 to 26 are sectional views for explaining various modified embodiments of the gas injection module in the substrate processing apparatus according to the first to third embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a perspective view schematically showing a substrate processing apparatus according to a first embodiment of the present invention, FIG. 3 is a plan view schematically showing a substrate processing apparatus according to the first embodiment of the present invention, 5 is a cross-sectional view schematically showing a cross section of the line II-II 'shown in FIG. 3, and FIG. 6 is a cross-sectional view taken along the line III-III' Fig.

Referring to FIGS. 2 to 6, the substrate processing apparatus according to the first embodiment of the present invention includes a process chamber 100 for providing a process space, a plurality of process chambers 100 installed in the process space for supporting and moving at least one substrate W A substrate temperature regulating unit 300 installed in the process chamber 100 to regulate the temperature of the substrate W moved by the substrate supporter 200, And a gas spraying part 400 for locally spraying a process gas onto the substrate moved by the support part 200 to deposit a thin film on the upper surface of the substrate W. [ Here, the thin film may be a high-k film, an insulating film, a metal film, or the like.

The process chamber 100 provides a process space for a substrate processing process (e.g., a thin film deposition process). To this end, the process chamber 100 includes a chamber body 110 formed to provide a process space, and a chamber lid 120 covering an upper portion of the chamber body 110.

The chamber body 110 comprises a chamber side wall formed vertically from a bottom surface and a bottom surface to define a process space.

A bottom frame 112 is mounted on the bottom surface of the chamber body 110. The bottom frame 112 includes a guide rail 114 for guiding the rotation of the substrate support 200, And a pumping port 116 for pumping the air to the outside. The pumping port 116 is installed at regular intervals in a pumping tube 117 arranged in a circular strip shape inside the bottom frame 112 so as to be adjacent to the chamber side wall and communicated with the process space.

At least one chamber side wall of the chamber body 110 is provided with a substrate entry / exit port 118 through which the substrate W is loaded or unloaded. The substrate inlet 118 includes chamber sealing means (not shown) for sealing the inside of the process space.

The chamber lid 120 is installed on the upper part of the chamber body 110 to seal the process space.

The chamber lid 120 supports the substrate temperature regulating unit 300 and the gas injecting unit 400. To this end, the chamber lid 120 includes first and second module mounting portions to which the substrate temperature regulating portion 300 and the gas spraying portion 400 are detachably mounted.

The first module installation part includes a plurality of first module installation holes 122a, 122b, 122c, and 122d formed at regular intervals in the chamber lid 120 so as to be spatially separated.

Each of the plurality of first module mounting holes 122a, 122b, 122c, and 122d is formed to penetrate the chamber lid 120 so as to have a fan-shaped plane. Direction. At this time, the side surfaces of each of the plurality of first module mounting holes 122a, 122b, 122c, and 122d may be formed in a stepped shape.

The second module installation part includes a plurality of second module installation holes 124a, 124b, 124c, and 124d formed at a predetermined interval in the chamber lid 120 so as to be spatially separated from the first module installation part.

Each of the plurality of second module mounting holes 124a, 124b, 124c and 124d is formed to penetrate the chamber lid 120 so as to have a rectangular plane. The plurality of first module mounting holes 122a, 122b, 122c, And 122d. At this time, the side surfaces of each of the plurality of second module mounting holes 124a, 124b, 124c, and 124d may be formed in a stepped shape. Each of the plurality of second module mounting holes 124a, 124b, 124c, and 124d is disposed radially with respect to the center of the upper surface of the chamber lid 120. Accordingly, each of the plurality of first module mounting holes 122a, 122b, 122c, and 122d is spatially separated by each of the plurality of second module mounting holes 124a, 124b, 124c, and 124d.

2, the chamber lid 120 is illustrated as having four first module mounting holes 122a, 122b, 122c, 122d and four second module mounting holes 124a, 124b, 124c, 124d, Without being limited thereto, the chamber lid 120 may have at least two first module mounting holes and at least two second module mounting holes. In the following description, the chamber lid 120 is provided with four, that is, first to fourth first module mounting holes 122a, 122b, 122c, and 122d and four, that is, first to fourth, second module mounting holes 124a, 124b, 124c, and 124d.

The chamber body 110 and the chamber lid 120 may be formed in a circular shape as shown in the figure, but may be formed in a polygonal or elliptical shape such as a hexagonal shape. At this time, in the case of a polygonal structure such as a hexagonal shape, the chamber body 110 may have a structure that is divided into a plurality of parts.

The substrate support 200 is movably installed on the inner bottom surface of the process chamber 100, that is, the bottom frame 112, and is transferred from an external substrate loading apparatus (not shown) Thereby supporting at least one substrate W to be carried. At this time, the substrate supporting part 200 is formed in the form of a disk and is held in a grounded or floating state electrically. The substrate W may be a semiconductor substrate or a wafer. In this case, in order to improve the productivity of the substrate processing process, it is preferable that a plurality of the substrates W are arranged at regular intervals on the substrate supporter 200 so as to have a circular shape.

A plurality of substrate seating areas (not shown) on which the substrate W is placed may be provided on the upper surface of the substrate supporting part 200. Each of the plurality of substrate seating areas (not shown) may include a plurality of alignment marks (not shown) displayed on the upper surface of the substrate supporting part 200, As shown in FIG. The substrate W is loaded onto the substrate mounting area (not shown) by a substrate loading device, and an identification member (not shown) is formed on one side of the substrate W to indicate a lower portion of the substrate W . Accordingly, the substrate loading apparatus detects the identification member provided on one side of the substrate W, aligns the loading position, and loads the aligned substrate into the substrate seating area (not shown). The lower portion of each substrate W placed on the substrate supporting portion 200 is located at the edge portion of the substrate supporting portion 200 and the upper portion of each substrate W is positioned at the center portion of the substrate supporting portion 200 . The identification member may be used as an inspection reference position in various inspection processes for the substrate on which the substrate processing process is completed.

The substrate W is moved in a predetermined order by rotating the substrate supporting part 200 in a predetermined direction (for example, counterclockwise direction) according to the driving of the driving part 210, So that the lower portion of each of the yarns 400 is sequentially passed through. At this time, the movement of the substrate supporting part 200 is guided by the guide rails 114 formed on the bottom frame 112. A guide groove into which the guide rail 114 is inserted is formed in a lower edge region of the substrate support 200.

The driving unit 210 may include a driving shaft 212, a shaft driving unit 214, and a bellows 216.

The drive shaft 212 penetrates the bottom surface of the chamber body 110 and the bottom frame 112 and is coupled to the bottom surface of the substrate support 200.

The shaft driving means 214 is installed outside the chamber body 110 to be coupled to the driving shaft 212 to rotate the driving shaft 212 in a predetermined direction. At this time, the axis driving means 214 may adjust the gap (or gap) between the substrate support 200 and the chamber lid 110 by elevating the drive shaft 212 to a predetermined height.

The bellows 216 is installed between the lower surface of the chamber body 110 and the shaft driving means 214 so as to enclose the driving shaft 212 penetrating the chamber body 110 to seal the process space. Here, the bellows 216 can be compressed or expanded together with the lifting and lowering of the drive shaft 212.

The substrate temperature regulator 300 is removably installed in the first module mounting portion of the chamber lid 120 to regulate the temperature of the substrate W sequentially moved by the substrate supporting portion 200. For example, the substrate temperature regulator 300 may include a plurality of temperature regulation regions 201, 203, 205, and 207 defined to be spatially separated between the chamber lid 120 and the substrate support 200, The temperature of the substrate W is lowered by heating the substrate W passing through the lower portions of the temperature control regions 201, 203, 205 and 207 according to the driving of the substrate supporting portion 200 by discharging the adjusting source TCS, For example, in the range of 250 캜 to 450 캜.

The substrate temperature regulating unit 300 includes first to fourth substrate temperature regulating modules (not shown) detachably mounted on the first to fourth first module mounting holes 122a, 122b, 122c, and 122d of the first module mounting unit 302, 304, 306, 308).

Each of the first to fourth substrate temperature control modules 302, 304, 306, and 308 according to one embodiment includes a temperature control frame 310, a substrate temperature control source member 320, a frame cover 330, (340).

The temperature regulation frame 310 is formed in a box shape so as to have a storage space having an opened top surface, and is detachably inserted into the first module mounting holes 122a, 122b, 122c and 122d. That is, the temperature control frame 310 includes a housing frame inserted into the first module mounting holes 122a, 122b, 122c, and 122d to receive the substrate temperature adjusting source member 320, And a frame frame detachably mounted on the upper surface of the frame 120. The temperature regulating frame 310 may be made of aluminum, Inconel, nickel, aluminum nitride, stainless steel, or the same material as the chamber lid 120.

The lower surface of the temperature control frame 310 may be coincident with the lower surface of the chamber lead 120 or may protrude toward the substrate support 200 to have a predetermined height according to the thin film deposition characteristics.

The substrate temperature adjusting member 320 is disposed in the receiving space of the temperature adjusting frame 310 and adjusts the temperature of the bottom surface of the temperature adjusting frame 310 to adjust the substrate temperature adjusting source TCS Is transferred to the upper surface of the substrate W.

The substrate temperature regulating member 320 heats the substrate W passing under the temperature regulating regions 201, 203, 205 and 207 according to the driving of the substrate supporting unit 200.

The substrate temperature adjusting member 320 may be a high temperature heater, a resistance heating type heat ray heater or a photothermal type lamp heater. In this case, the substrate temperature adjusting member 320 can heat the temperature adjusting frame 310 to 500 ° C or more by generating heat of 500 ° C or more.

The frame cover 330 seals a storage space where the substrate temperature regulating member 320 is coupled to the upper surface of the temperature regulating frame 310 accommodated therein.

The sealing member 340 serves to seal between the temperature control frame 310 and the first module mounting holes 122a, 122b, 122c and 122d and may be formed of an O-ring.

Each of the first to fourth substrate temperature control modules 302, 304, 306, and 308 according to another embodiment includes the temperature control frame 310, the substrate temperature control source member 320, and the frame cover 330 And may be formed of a molding heater that is integrally formed.

Each of the first through fourth substrate temperature control modules 302, 304, 306, and 308 is formed to have the same area (or size) Distance (or interval) d.

The substrate temperature controller 300 may control the substrate temperature adjusting source TCS generated by driving the substrate temperature adjusting source 320 of each of the substrate temperature adjusting modules 302, 304, 306, The upper surface of each of the plurality of substrates W sequentially passing under the respective temperature regulation regions 201, 203, 205 and 207 is discharged to each of the plurality of temperature regulation regions 201, 203, 205, Or the thin film material of the process gas PG injected onto the substrate W by the gas injecting unit 400 is heated and deposited on the substrate W. [

Meanwhile, the substrate temperature regulator 300 may control the temperature of the substrate W and / or the processing space of the process chamber to be room temperature (for example, room temperature) by discharging a substrate temperature control source (TCS) For example, 15 [deg.] C to 25 [deg.] C), or the temperature of the heated substrate after the completion of the thin film deposition process can be lowered to the room temperature. In this case, each of the substrate temperature regulation modules 302, 304, 306, and 308 of the substrate temperature regulator 300 may include a fluid of a predetermined temperature supplied from an external fluid circulating device (not shown) , Cooling gas, or cooling liquid) is continuously circulated.

The gas injector 400 is detachably installed in the second module mounting portion of the chamber lid 120 and injects the process gas PG onto the substrate W sequentially moved by the substrate supporting portion 200 . That is, the gas injecting unit 400 may include a plurality of gas injections defined between the plurality of temperature regulation regions 201, 203, 205, and 207 so as to be spatially separated between the chamber lid 120 and the substrate supporting unit 200, The substrate W having passed through the lower portions of the temperature control regions 201, 203, 205, and 207 according to the driving of the substrate supporting portion 200 by injecting the process gas PG into the regions 202, 204, Or a process gas (PG) is sprayed onto the substrate W. In this way, The gas injection unit 400 includes first to fourth gas injection modules 402, 404, and 404 which are detachably mounted on the second module mounting holes 124a, 124b, 124c, and 124d of the second module mounting unit, 406, and 408, respectively.

Each of the first to fourth gas injection modules 402, 404, 406 and 408 includes a gas injection frame 410, a plurality of gas supply holes 420, and a sealing member 430.

The gas injection frame 410 is formed in a box shape having a bottom opening and is detachably inserted into the second module mounting holes 124a, 124b, 124c, and 124d. That is, the gas injection frame 410 includes a ground plate 412 to which a bolt or the like is detachably mounted to the chamber lid 120 around the second module mounting holes 124a, 124b, 124c, and 124d by a fastening member, And a ground side wall 414 vertically protruding from the bottom edge portion of the ground plate 412 so as to form the gas injection space GSS and inserted into the second module mounting holes 124a, 124b, 124c, and 124d. The gas injection frame 410 is electrically grounded through the chamber lead 120.

The lower surface of the gas injection frame 410, that is, the lower surface of the ground side wall 414, may be located on the same line as the lower surface of the chamber lead 120. Further, the lower surface of the ground side wall 414 may protrude toward the substrate supporting part 200 so as to have a predetermined height from the lower surface of the chamber lid 120 according to the thin film deposition characteristics. In this case, the ground side wall 414 of each of the first to fourth gas injection modules 402, 404, 406, 408 protrudes from the lower surface of the chamber lead 120 at the same height, Or may be mounted on the chamber lid 120 or spaced at different heights from the bottom surface of the chamber lid 120 so as to have a different spacing from the substrate W. [

The plurality of gas supply holes 420 are formed to penetrate the upper surface of the gas injection frame 410, that is, the ground plate, and communicate with the gas injection space provided inside the gas injection frame 410. The plurality of gas supply holes 420 supply a process gas PG supplied from an external gas supply device (not shown) to the gas injection space, so that the process gas PG is supplied to the gas injection region 202, 204, 206, 208, respectively.

The process gas PG may include at least one of a source gas and a reactive gas.

The source gas includes a main material of a thin film to be deposited on a substrate W and may be formed of a gas such as silicon (Si), a titanium group element (Ti, Zr, Hf, etc.) have. For example, a source gas containing a silicon (Si) material may be a silicon compound such as silane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetraethylorthosilicate (TEOS), dichlorosilane (DCS) Hexachlorosilane, Tri-dimethylaminosilane (TriDMAS), and Trisilylamine (TSA).

The reaction gas may be a reaction gas containing a part of the thin film to be deposited on the substrate W and reacting with the source gas to form a final thin film. For example, the reaction gas may be hydrogen (H2), nitrogen (N2), oxygen (O2), nitrogen dioxide (N2O), ammonia (NH3), water (H2O), or ozone (O3).

The source gas or the reaction gas may include purge gas such as nitrogen (N 2), argon (Ar), xenon (Ze), or helium (He).

The sealing member 430 seals between the gas injection frame 410 and the second module mounting holes 124a, 124b, 124c, and 124d and may be formed of an O-ring.

The first to fourth gas injection modules 402, 404, 406, 408 may be grouped into a source gas injection group and a reactive gas injection group. The source gas injection group is composed of a part of the gas injection modules of the first to fourth gas injection modules 402, 404, 406, and 408, and the reactive gas injection group includes the first to fourth gas injection modules 402, 404, 406, and 408, respectively. For example, the source gas injection group may include first and third gas injection modules 402 and 406 disposed diagonally with respect to the center of the chamber lid 120, And the second and fourth gas injection modules 404 and 408 disposed diagonally with respect to the center of the first gas injection module 120. In this case, the substrate W sequentially passes through the lower portions of the first to fourth gas injection modules 402, 404, 406, and 408 in accordance with the driving of the substrate supporter 200, The gas and the reaction gas are sequentially injected.

The gas injection unit 400 is connected to the plurality of gas injection regions 202, 204, 206, and 208 through the first to fourth gas injection modules 302, 304, 306, A source gas and a reactive gas are supplied to the upper surface of each of a plurality of substrates W sequentially passing through the lower portions of the respective gas injection regions 202, 204, 206, and 208 by injecting a source gas and a reactive gas, So that a predetermined thin film is deposited on the upper surface of the substrate W.

The substrate processing apparatus according to the first embodiment of the present invention further includes a lead temperature holding unit 500 for minimizing heat loss of the substrate temperature adjusting unit 300 by keeping the temperature of the chamber lid 120 constant. And the like. That is, in the present invention, since the above-described substrate temperature controller 300 is mounted on the chamber lid 120, heat generated in the substrate temperature controller 300 is lost through the chamber lid 120, 300 may be degraded. Accordingly, the lead temperature holding unit 500 is installed in the chamber lid 120 to maintain the temperature of the chamber lid 120 at a constant temperature, thereby minimizing the heat loss of the substrate temperature adjusting unit 300. To this end, the lead temperature holding portion 500 may be configured to include a line insertion groove 510, a fluid circulation line 520, and a line cover 530.

The line inserting groove 510 is formed at a predetermined depth from the upper surface of the chamber lid 120 and the upper surface of the edge portion and from the upper surface of the chamber lid 120 to correspond to the gap between the substrate temperature regulating portion 300 and the gas injecting portion 400, As shown in FIG. That is, the line insertion groove 510 is recessed to have a predetermined depth from the upper surface of each of the center portion and the edge portion of the chamber lead 120, and the first module mounting holes 122a, 122b, 122c, Is formed to have a predetermined depth from the upper surface of the chamber lid 120 corresponding to between the second module mounting holes 124a, 124b, 124c, and 124d. The line inserting groove 510 is arranged to enclose the first module mounting holes 122a, 122b, 122c and 122d and the second module mounting holes 124a, 124b, 124c and 124d, respectively.

The fluid circulation line 520 may be a pipe inserted into the line insertion groove 510. The fluid circulation line 520 maintains the chamber lid 120 at a constant temperature by continuously circulating a fluid consisting of a cooling gas or a cooling liquid supplied from an external fluid circulation device (not shown). That is, the temperature of the chamber lid 120 is maintained in a range where the sealing member 340 sealing between the temperature regulating frame 310 and the chamber lid 120 is not damaged or damaged by heat, for example, Can be maintained.

The line cover 530 is engaged with the chamber lid 120 to cover the line insertion groove 510, thereby concealing the fluid circulation line 520.

The substrate processing apparatus according to the first embodiment of the present invention may further include a heat shielding frame (not shown) provided between the temperature regulating frame 310 and the chamber lid 120.

The heat shield frame is inserted into the first module mounting holes 122a, 122b, 122c, and 122d to support the temperature control frame 310. [ For this purpose, the heat shield frame is formed to have a module insertion hole into which the temperature regulation frame 310 is inserted. The space between the lower surface of the heat shield frame and the first module mounting holes 122a, 122b, 122c and 122d and between the upper surface of the heat shield frame and the temperature adjusting frame 310 are sealed by an sealing member such as an o- do. The heat blocking frame is made of a material having a low heat transfer coefficient, for example, quartz, to block or minimize the heat of the temperature control frame 310 from being transferred to the chamber lid 120.

The substrate processing method using the substrate processing apparatus according to the first embodiment of the present invention will now be described briefly.

First, a plurality of substrates W are loaded on the substrate support 200 at predetermined intervals to be placed thereon.

Subsequently, each of the temperature regulation regions 201, 203, and 205 defined on the substrate supporter 200 through the driving of the substrate temperature control modules 302, 304, 306, and 308 of the substrate temperature regulator 300 described above, , 207). ≪ / RTI >

A plurality of substrates W are loaded and driven to move the substrate support 200 in a predetermined direction (for example, counterclockwise) from the bottom of the chamber lead 120 . At the same time, the process gas PG is supplied to each of the gas injection modules 402, 404, 406, and 408 of the gas injection unit 400 to process each of the plurality of gas injection regions 202, 204, 206, Gas (PG) is sprayed. As a result, the substrates W pass through the temperature control regions 201, 203, 205, and 207 and the gas injection regions 202, 204, 206, and 208 alternately. Accordingly, the substrate W is heated by the substrate temperature control source (TCS), which is emitted from each of the substrate temperature control modules 302, 304, 306, and 308 of the substrate temperature control unit 300, The substrate W is sequentially exposed to the process gas PG locally injected from each of the gas injection modules 402, 404, 406 and 408 of the jetting unit 400 so that the mutual reaction of the source gas and the reactive gas is performed on the upper surface of the substrate W A single layer or a multilayer thin film is deposited according to an ALD (Atomic Layer Deposition) deposition process.

As described above, the substrate processing apparatus and the substrate processing method using the same according to the first embodiment of the present invention can be applied to substrate processing apparatuses through the substrate temperature control modules (302, 304, 306, 308) By locally spraying the process gas onto the substrate support 200 through the gas injection modules 402, 404, 406, 408 installed to spatially separate the chamber lid 120, Maintenance can be easily performed, efficiency of using the process gas can be enhanced, uniform thin film can be deposited on the substrate, and film quality control of the thin film can be facilitated.

FIGS. 7 to 10 are views for explaining various embodiments of the substrate temperature control source arrangement structure of the respective substrate temperature control modules shown in FIG. 2 and FIG. 3. FIG.

In each of the plurality of substrate temperature control modules 302, 304, 306, and 308 according to the first embodiment, the above-described substrate temperature control source member 320 includes the temperature control frame 310, And a heat wire heater disposed inside the heat exchanger. The hot wire heater may be arranged to be bent in a zigzag fashion along the inner side 310i to the outer side 310o of the temperature adjusting frame 310 or along both sides of the temperature adjusting frame 310. [

In each of the plurality of substrate temperature control modules 302, 304, 306, and 308 according to the second embodiment, the above-described substrate temperature control source member 320 includes the temperature control frame 310, And the first to third heating elements 320a, 320b, and 320c disposed inside the first heating element 320a.

First, the temperature regulating frame 310 has first to third divided areas DA1, DA2, and DA3 that are divided into a predetermined area along the direction from the inside 310i to the outside 310o. The reason for dividing the inside of the temperature regulating frame 310 into three divided regions is that the heat transfer deviations exposed to the aforementioned substrate temperature adjusting source for each region in the substrate W as the substrate supporting portion 200 is driven, In order to minimize the temperature variation of each region in the substrate W caused by heat loss or the like of the outer side portion of the substrate W adjacent to the side wall.

The first to third heating elements 320a, 320b and 320c are arranged to be bent in a zigzag fashion from the inner side 310i to the outer side 310o of the temperature adjusting frame 310 or along both sides of the temperature adjusting frame 310 And may be disposed in each of the first to third divided areas DA1, DA2, and DA3. At this time, each of the first through third hot wire heaters 320a, 320b, and 320c has the same length.

Each of the first to third hot wire heaters 320a, 320b and 320c generates heat at different temperatures according to different power sources supplied separately from an external substrate temperature adjusting source driving device (not shown) And the divided regions DA1, DA2, and DA3 are heated to different temperatures. Here, assuming that the temperatures of the first through third divided regions DA1, DA2, and DA3 are first to third temperatures T1, T2, and T3, the first to third divided regions DA1, DA2, and DA3 ) May be T1 < T2 < T3.

The temperature regulating frame 310 may further include first and second partition walls B1 and B2 for spatially separating the first to third partition areas DA1, DA2 and DA3.

The first partition B1 is formed in a curved shape between the first and second divided regions DA1 and DA2 to spatially separate the first and second divided regions DA1 and DA2, And blocks thermal interference between the regions DA1 and DA2.

The second bank B2 is formed in a curved shape between the second and third divisional areas DA2 and DA3 to spatially separate the second and third divisional areas DA2 and DA3, And blocks thermal interference between the regions DA2 and DA3.

In each of the plurality of substrate temperature regulation modules 302, 304, 306, and 308 according to the third embodiment, the above-described substrate temperature adjustment source member 320 is configured as described above in the second embodiment The first to third heating elements 320a, 320b and 320c disposed in the first to third divided areas DA1, DA2 and DA3 of the temperature regulation frame 310, respectively, Each of the third heating elements 320a, 320b, and 320c has different densities (or lengths).

The first hot wire heater 320a is formed in a zigzag shape so as to have a first length and to be bent in the first divided area DA1. The first heating element 320a is disposed in the first partition area DA1 to have the first density, and thus the first heating element 320a generates heat in accordance with the first power supplied from the substrate temperature control source driving device, Is heated to the first temperature (T1).

The first hot wire heater 320a disposed in the first partition zone DA1 emits a substrate temperature adjusting source to the central region of the upper surface of the substrate supporter 400 to be heated by the process gas injected from the gas injecting unit 400, And can prevent the thin film from being deposited on the central region of the upper surface of the support part 400. [ Here, when the substrate W is superimposed on the first divisional area DA1, the first hot-wire heater 320a heats the overlap region of the substrate W superimposed on the first divisional area DA1 Also.

The second heating element 320b is formed to have a second length longer than that of the first heating element 320a and is disposed in a zigzag shape so as to be bent in the second partitioning area DA2. The second hot wire heater 320b is disposed in the second divided area DA2 to have a second density higher than the first density of the first hot wire heater 320a, The second divisional area DA2 is heated to a second temperature T2 higher than the first temperature T1 of the first divisional area DA1 by generating heat according to the second power source.

The third heating element 320c is formed in a zigzag shape so as to have a third length longer than the second heating element 320b and to be bent in the third partitioning area DA3. The third hot wire heater 320c is disposed in the third partition area DA3 to have a third density higher than the second density of the second hot wire heater 320b, The third partition area DA3 is heated to a third temperature T3 higher than the second temperature T2 of the second partition area DA2 by generating heat according to the third power source. Here, the first to third power sources may have the same or different powers. In this case, when the first to third power sources have different powers, the power of each of the first to third power sources may be gradually increased in the order of the first power source, the second power source, and the third power source.

The second and third hot wire heaters 320b and 320c disposed in the second and third divided areas DA2 and DA3 emit a substrate temperature adjusting source on the substrate W supported by the substrate supporting part 400 The thin film can be smoothly deposited on the upper surface of the substrate W by the process gas injected from the gas injecting unit 400.

In each of the plurality of substrate temperature control modules 302, 304, 306, and 308 according to the fourth embodiment, the above-described substrate temperature control source member 320 includes the temperature control frame 310, And a plurality of lamp heaters disposed inside the lamp housing. The plurality of lamp heaters may be arranged to be spaced apart from the inner side 310i to the outer side 310o of the temperature adjusting frame 310 or along both sides of the temperature adjusting frame 310. [ The lamp heater heats the temperature adjusting frame 310 by discharging heat generated from the lamp according to the power supplied from the substrate temperature adjusting source driving device.

The temperature control frame 310 of the plurality of substrate temperature control modules 302, 304, 306, and 308 according to the fourth embodiment is the same as the second embodiment shown in FIG. 8, And the plurality of lamp heaters described above may be arranged in the same number or in different numbers in each of the divided areas. Accordingly, the temperature of each of the first to third divided regions can be gradually increased in the order of the first divided region, the second divided region and the third divided region.

11, each of the plurality of substrate temperature adjusting modules 302, 304, 306, and 308 according to the first to fourth embodiments may have a predetermined area from the inside of the temperature adjusting frame 310 And an extended area (EA) extended by the extended area (EA).

The extended region EA extends from the inner side of the temperature regulating frame 310, that is, from the inside of the first divided region DA1 to the central portion of the chamber lid 120. [ The inside of the first module mounting hole formed in the chamber lid 120 is also extended to be inserted into the extended area EA of the substrate temperature adjusting modules 302, 304, 306, and 308. 12, the extension regions EA of the substrate temperature control modules 302, 304, 306, and 308 are disposed at regular intervals in the center region of the chamber lid 120. As shown in FIG.

The above-described substrate temperature adjusting member 320 is disposed in the extended region EA. That is, since the extended area EA is an area communicating with the first divided area DA1, the first hot wire heater 320a disposed in the first divided area DA1 is extended and disposed in the extended area EA , A lamp heater is additionally disposed. The substrate temperature regulating member 320 disposed in the extended region EA of the substrate temperature regulating modules 302, 304, 306 and 308 has a substrate temperature adjusting source The flow of the process gas injected from the gas injecting unit 400 is smoothly performed and the thin film is prevented from being deposited on the central region of the upper surface of the substrate supporting unit 400.

On the other hand, each of the plurality of substrate temperature regulation modules 302, 304, 306, and 308 according to the first to fourth embodiments described above includes a temperature detection unit 350 for controlling the temperature of the substrate temperature control source member 320 .

13, the temperature detecting unit 350 may include a plurality of contact-type detecting units 310a and 310b, which are provided at regular intervals on the bottom surface of the temperature adjusting frame 310 to detect the temperature of the temperature adjusting frame 310, And temperature sensors 350a, 350b, and 350c.

Each of the plurality of contact type temperature sensors 350a, 350b and 350c detects the bottom surface temperature of the temperature control frame 310 according to the contact type temperature measurement method, and outputs the detected temperature to an external substrate temperature control source control device (Not shown). Each of the plurality of contact temperature sensors 350a, 350b and 350c is installed in each of the divided regions DA1, DA2 and DA3 of the temperature control frame 310 to detect the temperature of the substrate W, DA2, and DA3 corresponding to the inner portion IS, the center portion CS, and the outer portion OS of each of the plurality of the divided regions DA1, DA2, and W can be detected.

The substrate temperature control source control device controls each of the substrate temperature control modules 302, 304, and 306 by controlling the substrate temperature control source member 320 in accordance with the temperatures detected by the plurality of contact temperature sensors 350a, 350b, , 308).

14, the temperature detecting unit 350 according to another embodiment includes a plurality of non-contact temperature sensors 352a, 352b, and 352c provided at regular intervals on the bottom surface of the temperature adjusting frame 310, do.

Each of the plurality of non-contact temperature sensors 352a, 352b, and 352c is installed inside the temperature adjusting frame 310 to overlap the plurality of light transmitting windows 353 provided on the bottom surface of the temperature adjusting frame 310. Each of the plurality of noncontact type temperature sensors 352a and 352b and 352c radiates radiant energy (or radiant heat) (hereinafter referred to as &quot; radiant energy &quot;) of the substrate W irradiated from the substrate W through the plurality of light transmitting windows 352 Radiant Energy RE) to detect the temperature of the substrate W, and provides the detected temperature to an external substrate temperature control source control device (not shown). Each of the plurality of non-contact type temperature sensors 352a, 352b, and 352c generates an electric signal corresponding to the temperature of the heat sensor by converting the radiant energy into heat to increase the temperature of the heat sensor, (Not shown). The substrate temperature regulating source control device controls each of the substrate temperature regulating modules 302, 304, 306, and 306 by controlling the substrate temperature regulating source member 320 according to the temperatures detected by the plurality of non-contact temperature sensors 352a, 352b, 308).

Each of the plurality of noncontact type temperature sensors 352a and 352b and 352c is installed in each of the divided areas DA1, DA2 and DA3 of the temperature control frame 310 as shown in Figs. 8 and 9, It is possible to detect the temperatures of the inner portion IS, the central portion CS, and the outer portion OS of the wafer W, respectively.

Each of the plurality of noncontact type temperature sensors 352a and 352b and 352c irradiates the substrate W with a laser to irradiate a temperature detection region of the inner side IS, the central portion CS and the outer side OS of the substrate W You can also direct.

15, the temperature detector 350 may include a plurality of temperature sensors 354a, 354b, and 354c disposed at regular intervals to penetrate the bottom surface of the temperature control frame 310, A plurality of sensor elevating members 355a, 355b, and 355c for raising and lowering the temperature sensors 354a, 354b, and 354c, respectively, and a plurality of sensor sealing members 356.

Each of the plurality of temperature sensors 354a, 354b, and 354c is installed on a sensor sealing member 356 provided on the bottom surface of the temperature regulation frame 310. Each of the plurality of temperature sensors 354a, 354b and 354c descends to approach the upper surface of the substrate W through the sensor sealing member 356 according to the driving of the sensor elevating members 355a, 355b and 355c, W, and ascends after the temperature is detected to be located inside the temperature regulation frame 310. [

Each of the plurality of temperature sensors 354a, 354b and 354c is installed in each of the divided areas DA1, DA2 and DA3 of the temperature regulating frame 310 to form an inner part IS, a central part CS, , And the outer side (OS), respectively.

Each of the plurality of sensor elevating members 355a, 355b, 355c is installed on the sensor sealing member 356 to elevate the temperature sensors 354a, 354b, 354c.

The plurality of sensor sealing members 356 are installed on the bottom surface of the temperature adjusting frame 310 which overlaps the lower portions of the temperature sensors 354a, 354b and 354c and are moved up and down according to the driving of the sensor elevating members 355a, 355b and 355c The temperature sensors 354a, 354b and 354c are sealed.

FIG. 16 is a cross-sectional view taken along the line III-III 'shown in FIG. 3, illustrating the gap between the substrate temperature control module and the substrate.

First, as shown in FIG. 6, in the above description, the interval d between the substrate temperature control module and the substrate is set to be the same. 4, in a region adjacent to the pumping port 116 and / or the substrate entry / exit 118 provided in the process chamber 100, a plurality of substrate temperature adjustment modules 302, 304, 306, 308 The emitted substrate temperature adjusting source may be lost, which may cause a temperature non-uniformity of the substrate W. Accordingly, it is necessary to heat the substrate region passing through the region adjacent to the pumping port 116 and / or the substrate entrance 118 relatively higher than the other region.

In order to minimize the temperature unevenness of the substrate, it is preferable that the intervals (h1, h2, h3) between the substrate temperature control module and the substrate are set differently. The spacing h1, h2 and h3 between the substrate temperature control modules 302, 304, 306 and 308 and the substrate W is controlled by the substrate temperature control modules 302 and 304 protruding from the lower surface of the chamber lead 120 , 306, 308) of the temperature regulating frame (310). The temperature control frames 310 of the respective substrate temperature control modules 302, 304, 306 and 308 have the same height or have different heights according to the intervals h1, h2 and h3 between the substrates W .

For example, the interval (h1, h2, h3) between each of the first to fourth substrate temperature regulating modules 302, 304, 306, 308 and the substrate W is controlled by the substrate temperature regulating modules 302, 304, 306, 308 And the pumping port 116, as shown in FIG. That is, when the pumping port 116 is disposed adjacent to the first substrate temperature regulation module 302, the first substrate temperature regulation module 302 may be spaced apart from the substrate W by a first distance h1 And the second and fourth substrate temperature adjustment modules 304 and 308 are disposed adjacent to both sides of the first substrate temperature adjustment module 302 so that the substrate W can be spaced apart from the substrate W by a first distance h1 And the third substrate temperature adjustment module 306 may be arranged to be symmetrical with respect to the first substrate temperature adjustment module 302 with respect to the center of the chamber lid 120, And can be arranged to be spaced apart from the substrate W by a third gap h3 which is wider than the second gap h2.

The second and fourth substrate temperature control modules 304 and 308 and the substrate W may have the same interval h2. However, the present invention is not limited to this, 308 and the substrate W may be different from each other.

FIG. 17 is a cross-sectional view taken along line I-I 'of FIG. 3, illustrating a modified embodiment of the substrate temperature adjustment module.

3, the substrate temperature control modules 302, 304, 306, and 308 include a temperature control frame 310, and the bottom surface of the temperature control frame 310 is formed in a flat plate shape. 8 and 9, the temperature regulating frame 310 has divided first through third divided areas DA1, DA2, and DA3. The temperature regulating frame 310 is disposed on the substrate W passing through the temperature regulating region using the substrate temperature regulating member 320 individually disposed in each of the first through third divided regions DA1, Is heated. Since the substrate W rotates about the central portion of the substrate support 200 to pass through the temperature control region, the substrate W is rotated due to the angular velocity deviation of the substrate W due to the rotation of the substrate W, ) May occur in each region.

As can be seen from FIG. 17, in order to prevent or minimize temperature non-uniformity in each region of the substrate W due to the angular velocity deviation of the substrate W, the substrate temperature control modules 302, 304, 306 308 are formed such that the respective divided areas DA1, DA2, DA3 of the temperature regulating frame 310 have different distances D1, D2, D3 from the substrate W. [

Specifically, the lower surface of the temperature control frame 310 protrudes toward the substrate W so as to have a stepped shape, thereby providing first to third divided areas DA1, DA2 and DA3.

The intervals D1, D2 and D2 between the first to third divisional areas DA1, DA2 and DA3 and the substrate W are set such that the distance from the inner side IS to the outer side OS of the substrate W becomes smaller, . For example, the first partition DA1 is spaced apart from the inner side IS of the substrate W by a first distance D1 and the second divided area DA2 is spaced apart from the central portion CS of the substrate W And the third partition area DA3 is spaced apart from the outer side OS of the substrate W so as to have a wider width than the second gap D2, And may be spaced apart to have a third spacing D3. This makes it possible to differentiate the distances D1, D2 and D2 between each of the first to third divisional areas DA1, DA2 and DA3 and the substrate W based on the angular speed deviation of the substrate W, W of the substrate W can be prevented or minimized due to the angular velocity deviation of the substrate W in each region.

Each of the substrate temperature control modules 302, 304, 306, and 308 according to the modified embodiment including the above-described temperature control frame 310 is provided with a plurality of spacers h1, h2, and h3, respectively. At this time, the interval between the substrate temperature control modules 302, 304, 306, 308 and the substrate W is set based on any one of the first to third divided areas DA1, DA2, .

Meanwhile, in the substrate temperature control modules 302, 304, 306, and 308 according to the above-described modified embodiments, the lower surface of the temperature control frame 310 is formed in a stepped shape so that the stepped portions are divided into the first to third divided regions DA1 and DA2 And DA3. However, the present invention is not limited thereto. As shown in FIG. 18, the lower surface of the temperature control frame 310 may have a predetermined slope. Even in this case, the gap D1, D2, D3 between the lower surface of the inclined temperature adjusting frame 310 and the substrate W is smaller than the distance from the inner side IS to the outer side OS of the substrate W .

FIG. 19 is a plan view schematically showing a substrate processing apparatus according to a second embodiment of the present invention, which is formed in a different area of each of the plurality of substrate temperature adjusting modules 302, 304, 306, and 308 shown in FIG. 2 . Hereinafter, only different configurations will be described.

First, in the substrate processing apparatus, the plurality of substrate temperature control modules 302, 304, 306, and 308 are formed to have the same area so that the temperature control areas 201, 203, 205, Respectively. 4, in a region adjacent to the pumping port 116 and / or the substrate entry / exit 118 provided in the process chamber 100, a plurality of substrate temperature adjustment modules 302, 304, 306, 308 The emitted substrate temperature adjusting source may be lost, which may cause a temperature non-uniformity of the substrate W. Accordingly, it is necessary to heat the substrate region passing through the region adjacent to the pumping port 116 and / or the substrate entrance 118 relatively higher than the other region.

In order to minimize temperature unevenness of the substrate, the area of each of the plurality of substrate temperature adjustment modules 302, 304, 306, and 308 is formed to have different areas according to the distance from the pumping port 116 , Whereby the temperature control regions 201, 203, 205, and 207 described above are set to different areas. The area of each of the plurality of substrate temperature control modules 302, 304, 306, and 308 may be set according to angles? A,? B, and? C between both side walls of each temperature regulation frame 310 formed in a fan shape.

For example, assuming that the pumping port 116 is disposed adjacent to the first substrate temperature adjustment module 302, the first substrate temperature adjustment module 302 may be configured to adjust the temperature And may have a first area by both sidewalls of the adjustment frame 310. The second and fourth substrate temperature adjustment modules 304 and 308 adjacent to both sides of the first substrate temperature adjustment module 302 are formed to have a second angle? B smaller than the first angle? And may have a second area smaller than the first area by both side walls of the temperature regulation frame 310. [ The third substrate temperature adjusting module 306 disposed on the opposite side of the first substrate temperature adjusting module 302 with respect to the center of the chamber lid 120 has a third angle? C smaller than the second angle? The third area can be smaller than the second area by both side walls of the temperature regulating frame 310 formed to have the first area.

The second and fourth substrate temperature control modules 304 and 308 have the same area, but the present invention is not limited thereto. The areas of the second and fourth substrate temperature control modules 304 and 308 may be different It is possible.

In the substrate processing apparatus according to the second embodiment of the present invention, the area of each of the plurality of substrate temperature control modules 302, 304, 306, and 308 is set differentially to correspond to the distance from the pumping port 116 The temperature unevenness phenomenon of the substrate due to the pumping port 116 and / or the substrate entrance 118 can be minimized.

On the other hand, the area of each of the plurality of substrate temperature regulation modules 302, 304, 306, and 308 can be set differentially according to the distance to the pumping port 116 and / or the substrate entrance 118 described above, But may also be set differently depending on the process gas injected from the injection modules 402, 404, 406, and 408. For example, the substrate temperature adjustment module adjacent to the gas injection module that injects the source gas may be formed to have a relatively larger area than the substrate temperature adjustment module adjacent to the gas injection module that injects the reaction gas.

FIG. 20 is a cross-sectional view of the substrate processing apparatus according to the third embodiment of the present invention, taken along line IV-IV 'shown in FIG. 19, which includes a plurality of substrate temperature adjusting modules 302, 304, 306 , 308 and the substrate W are formed differently from each other (h1, h2, h3). Hereinafter, only different configurations will be described.

Each of the first to fourth substrate temperature adjustment modules 302, 304, 306, and 308 may be formed to have different areas as shown in FIG. 19, and may be protruded to have different heights from the lower surface of the chamber lid 120 .

For example, the interval (h1, h2, h3) between each of the first to fourth substrate temperature regulating modules 302, 304, 306, 308 and the substrate W is controlled by the substrate temperature regulating modules 302, 304, 306, 308 And the pumping port 116, as shown in FIG. That is, when the pumping port 116 is disposed adjacent to the first substrate temperature regulation module 302, the first substrate temperature regulation module 302 may be spaced apart from the substrate W by a first distance h1 And the second and fourth substrate temperature adjustment modules 304 and 308 are disposed adjacent to both sides of the first substrate temperature adjustment module 302 so that the substrate W can be spaced apart from the substrate W by a first distance h1 And the third substrate temperature adjustment module 306 may be arranged to be symmetrical with respect to the first substrate temperature adjustment module 302 with respect to the center of the chamber lid 120, And can be arranged to be spaced apart from the substrate W by a third gap h3 which is wider than the second gap h2.

The second and fourth substrate temperature control modules 304 and 308 and the substrate W may have the same interval h2. However, the present invention is not limited to this, 308 and the substrate W may be different from each other.

As described above, in the description of the substrate processing apparatus according to the first to third embodiments of the present invention, the substrate temperature unit 300 includes the components for heating the substrate W, The substrate temperature unit 300 may be configured to include components for cooling the temperature of the substrate W. For example, In this case, the above-described substrate temperature control source member 320 may be a cooling line in which the cooling medium circulates as a cooling means. In this case, the substrate temperature adjusting member 320 can cool the temperature of the substrate W by cooling the temperature adjusting frame 310 to 250 ° C or less by generating cool air at 250 ° C or less.

FIG. 21 is a cross-sectional view for explaining a first modified embodiment of the gas injection module in the substrate processing apparatus according to the first to third embodiments of the present invention, which includes the gas injection modules 402 and 404 , 406, and 408 are further formed with a gas injection pattern member 440 in the gas injection space GSS. Hereinafter, only different configurations will be described.

The gas injection pattern member 440 of each of the gas injection modules 402, 404, 406 and 408 according to the first modified embodiment is supplied to the gas injection space GSS described above and is sprayed downward onto the substrate support 200 Thereby increasing the injection pressure of the process gas (PG). At this time, the gas injection pattern member 440 is integrally formed on the lower surface of the ground side wall 414 so as to cover the gas injection hole of the gas injection space GSS, or formed in the form of an insulating plate (or shower head) And may be coupled to the lower surface of the ground side wall 414 so as to cover the gas injection port of the gas injection space GSS. The gas injection space GSS is disposed between the ground plate 412 and the gas injection pattern member 440 to supply the process gas GSS supplied through the gas supply hole 420 to the gas injection space GSS PG) are diffused and buffered within the gas injection space (GSS).

The gas injection pattern member 440 includes a gas injection pattern 442 for injecting the process gas PG supplied to the gas injection space GSS downward toward the substrate W. [

The gas injection pattern 442 is formed in the form of a plurality of holes (or a plurality of slits) passing through the gas injection pattern member 440 so as to have a predetermined gap, ) To a predetermined pressure. At this time, the diameter and / or the interval of each of the plurality of holes may be set so that a uniform amount of gas is injected to the entire area of the substrate W moved on the basis of the angular velocity with the rotation of the substrate supporting part 200. For example, the diameter of each of the plurality of holes may be increased from the inside of the gas injection module adjacent to the central portion of the substrate support 200 toward the outside of the gas injection module adjacent to the edge portion of the substrate support 200.

The gas injection pattern member 440 described above injects the process gas PG downward through the gas injection pattern 442 and delays the injection of the process gas PG due to the plate shape in which the holes are formed, Thereby reducing the amount of gas used and increasing the use efficiency of the gas.

22 is a sectional view for explaining a second modified embodiment of the gas injection module in the substrate processing apparatus according to the first to third embodiments of the present invention, , 406, and 408. The plasma electrode 450 is further formed in the gas injection space GSS. Hereinafter, only different configurations will be described.

First, in the substrate processing apparatuses described above, the process gas, that is, the source gas and the reactive gas are injected onto the substrate in an inactive state. However, there is a need to activate the source gas and / or the reaction gas depending on the material of the thin film to be deposited on the substrate, and to spray the substrate on the substrate. Thus, each of the gas injection modules 402, 404, 406, and 408 according to the second modified embodiment activates the supplied gas and injects the gas onto the substrate.

Specifically, each of the gas injection modules 402, 404, 406, and 408 according to the second modified embodiment may be configured to further include a plasma electrode 450 interposed in the gas injection space GSS. To this end, in each of the gas injection modules 402, 404, 406 and 408, an insulating member insertion hole 412a communicating with the gas injection space GSS is formed on the ground plate 412 of the gas injection frame 410 And the insulating member 422 is inserted into the insulating member insertion hole 412a. An electrode insertion hole 422a communicating with the gas injection space GSS is formed in the insulating member 422 and a plasma electrode 450 is inserted into the electrode insertion hole 422a.

The plasma electrode 450 is inserted into the gas injection space GSS and is disposed in parallel with the ground side wall 414. [ The lower surface of the plasma electrode 450 may be located on the same line HL as the lower surface of the ground sidewall 414 or may protrude from the lower surface of the ground sidewall 414 to a predetermined height. The ground side wall 414 functions as a ground electrode for forming a plasma together with the plasma electrode 450.

The plasma electrode 450 forms a plasma from the process gas PG supplied to the gas injection space (GSS) according to the plasma power supplied from the plasma power supply unit 460. At this time, the plasma is formed between the plasma electrode 450 and the ground electrode by an electric field applied between the plasma electrode 450 and the ground electrode according to a plasma power source. Thus, the process gas PG supplied to the gas injection space GSS is activated by the plasma and is sprayed downward onto the substrate W. At this time, the gap (or gap) between the plasma electrode 450 and the ground electrode is reduced by the plasma electrode 450 to prevent the thin film deposited on the substrate W and / or the substrate W from being damaged by the plasma. Is set to be narrower than the interval between the substrate (W) and the substrate (W). The plasma is formed between the plasma electrode 450 arranged in parallel so as to be spaced apart from the substrate W and the ground electrode without forming the plasma between the substrate W and the plasma electrode 450 It is possible to prevent the substrate W and / or the thin film from being damaged by the plasma.

The plasma power source may be high frequency power or radio frequency (RF) power, for example, LF (Low Frequency) power, MF (Middle Frequency), HF (High Frequency) power, or VHF . At this time, the LF power has a frequency in the range of 3 kHz to 300 kHz, the MF power has a frequency in the range of 300 kHz to 3 MHz, the HF power has a frequency in the range of 3 MHz to 30 MHz, And may have a frequency in the range of 300 MHz.

An impedance matching circuit (not shown) may be connected to the feed cable connecting the plasma electrode 450 and the plasma power supply unit 460. The impedance matching circuit matches the load impedance and the source impedance of the plasma power supplied from the plasma power supply unit 460 to the plasma electrode 450. The impedance matching circuit may be composed of at least two impedance elements (not shown) constituted by at least one of a variable capacitor and a variable inductor.

In the above description, it has been described that all of the gas injection modules 402, 404, 406, 408 are configured to include the plasma electrode 450, but the present invention is not limited thereto. Depending on the material of the thin film to be deposited on the substrate The source gas or the reactive gas may be injected onto the substrate in an inactive state. For example, the gas injection module of the source gas injection group that injects the source gas may not be configured to include the plasma electrode 450, but may be configured as shown in FIG. 6 or FIG.

Each of the gas injection modules 402, 404, 406, and 408 according to the second modified embodiment may further include the gas injection pattern member 440 shown in FIG. In this case, the plasma electrode 450 is disposed inside the gas injection space (GSS) so as to be spaced apart from the gas injection pattern member 440 at a predetermined interval.

23 is a cross-sectional view for explaining a third modified embodiment of the gas injection module in the substrate processing apparatus according to the first to third embodiments of the present invention, in which the gas injection modules 402, 404 , 406, and 408. The first and second gas injection spaces GSS1 and GSS2 are spatially separated from each other. Hereinafter, only different configurations will be described.

Each of the gas injection modules 402, 404, 406, 408 according to the third modified embodiment includes a gas injection frame 410 having first and second gas injection spaces GSS1, GSS2 spatially separated from each other, And second gas supply holes 420a and 420b.

The gas injection frame 410 includes a ground plate 412, a ground side wall 414, and a ground barrier 416.

The ground plate 412 is formed in a flat plate shape and is coupled to the upper surface of the chamber lid 120. The ground plate 412 is electrically connected to the chamber lid 120 and electrically grounded through the chamber lid 120.

The ground side wall 414 protrudes from the bottom edge of the ground plate 412 to have a predetermined height to provide the first and second gas injection spaces GSS1 and GSS2. The ground side wall 414 is inserted into the module mounting holes 124a, 124b, 124c, and 124d provided in the chamber lid 120 described above. At this time, the lower surface of the ground side wall 414 is located on the same line as the lower surface of the chamber lid 120 or does not protrude from the lower surface of the chamber lid 120.

The ground barrier ribs 416 vertically protrude from the center bottom surface of the ground plate 412 to spatially separate the first and second gas injection spaces GSS1 and GSS2. Accordingly, the first and second gas injection spaces GSS1 and GSS2 are spatially separated by being surrounded by the ground sidewalls 414 and the ground barrier ribs 416, respectively. The ground barrier ribs 416 are integrated with the gas injection frame 410 and are electrically grounded to the chamber lid 120 through the ground plate 412 to serve as a ground electrode.

The first gas supply hole 420a is formed to pass through the ground plate 412 and communicates with the first gas injection space GSS1. At this time, the first gas supply holes 420a may be formed to have a predetermined spacing along the longitudinal direction of the ground plate 412. The first gas supply hole 420a is connected to an external source gas supply means through a gas supply pipe (not shown) to supply the source gas G1 supplied from the source gas supply means to the first gas injection space GSS1 Supply. Thus, the source gas G1 is diffused in the first gas injection space GSS1 and is supplied to one side region of the gas injection regions 202, 204, 206, and 208 through the first gas injection space GSS1, 204, 206 and 208 in accordance with the driving of the substrate supporting part 200 by being sprayed downward.

The second gas supply hole 420b is formed to pass through the ground plate 412 and communicates with the second gas injection space GSS2. At this time, the second gas supply holes 420b may be formed to have a predetermined distance along the longitudinal direction of the ground plate 412. The second gas supply hole 420b is connected to an external reaction gas supply means through a gas supply pipe (not shown) to supply the reaction gas G2 supplied from the reaction gas supply means to the second gas injection space GSS2 Supply. The reaction gas G2 is diffused in the second gas injection space GSS2 and is diffused through the second gas injection space GSS2 to the other side of the gas injection regions 202, 204, 206 and 208 in accordance with the driving of the substrate supporting part 200 by being sprayed downward.

Each of the gas injection modules 402, 404, 406 and 408 according to the third modified embodiment reacts with the source gas G1 through the spatially separated first and second gas injection spaces GSS1 and GSS2. (Chemical Vapor Deposition) deposition process using the mutual reaction of the source gas G1 and the reaction gas G2 by spraying the gas G2 downward into each of the gas injection regions 202, 204, 206, W to deposit a predetermined thin film.

Each of the gas injection modules 402, 404, 406 and 408 according to the third modified embodiment described above is provided with a gas injection frame (not shown) to cover at least one of the first and second gas injection spaces GSS1 and GSS2 (Not shown) disposed on the lower surface of the base plate 410. At this time, since the gas injection pattern member is the same as the gas injection pattern member 440 shown in FIG. 21, the description thereof will be replaced with the above description.

For example, the gas injection pattern member may be installed on the lower surface of the gas injection frame 410 so as to cover the lower portion of the first gas injection space GSS1. In this case, the gas injection pattern member is supplied to the first gas injection space GSS1 to increase the injection pressure of the source gas G1 to be injected downward, so that the reaction gas injected from the second gas injection space GSS2 is injected into the first Thereby preventing diffusion, backwash, and penetration into the gas injection space GSS1. That is, when the reactive gas is diffused, backward flowed, and infiltrated into the first gas injection space GSS1, the source gas G1 and the reactive gas G2 may react in the first gas injection space GSS1 As a result, an abnormal thin film may be deposited on the inner wall of the first gas injection space GSS1, or an abnormal thin film of a powder component may be formed to generate particles falling on the substrate. Accordingly, the gas injection pattern member 440 functions to prevent an abnormal thin film from being deposited on the inner wall of the first gas injection space S1 or an abnormal thin film of the powder component, as in the above-described example.

Further, the gas injection pattern member may inject the gas downward, delay the injection of the gas due to the shape of the plate formed with the holes, or stagnate the gas, thereby reducing the amount of gas used and increasing the use efficiency of the gas.

24 is a cross-sectional view for explaining a fourth modified embodiment of the gas injection module in the substrate processing apparatus according to the first to third embodiments of the present invention, in which the gas injection modules 402, 404 , 406, and 408 are further formed with a plasma electrode 450 in the second gas injection space GSS2. Hereinafter, only different configurations will be described.

First, the reaction gas G2 injected from each gas injection module 402, 404, 406, 408 shown in FIG. 23 is injected onto the substrate in an inactive state. However, it is necessary to activate the reactive gas on the substrate according to the material of the thin film to be deposited on the substrate, and to spray the substrate on the substrate. Accordingly, each of the gas injection modules 402, 404, 406, and 408 according to the fourth modified embodiment activates the reaction gas G2 to be supplied and injects it onto the substrate.

Specifically, each of the gas injection modules 402, 404, 406, and 408 according to the fourth modified embodiment may further include a plasma electrode 450 interposed in the second gas injection space GSS2. An insulating member insertion hole 412a communicating with the second gas injection space GSS2 is formed in the ground plate 412 of the gas injection frame 410 in the gas injection modules 402, 404, 406, And the insulating member 422 is inserted into the insulating member insertion hole 412a. An electrode insertion hole 422a communicating with the second gas injection space GSS2 is formed in the insulating member 422 and a plasma electrode 450 is inserted into the electrode insertion hole 422a.

The plasma electrode 450 is inserted into the second gas injection space GSS2 and disposed in parallel with the ground barrier rib 416. [ The lower surface of the plasma electrode 450 may be positioned on the same line as the lower surface of the ground barrier rib 416 or may have a predetermined height from the lower surface of the ground side wall 414 and the ground barrier rib 416. Each of the ground sidewalls 414 and the ground barrier ribs 416 serves as a ground electrode for forming a plasma together with the plasma electrode 450.

The plasma electrode 450 forms a plasma from the reaction gas G2 supplied to the second gas injection space GSS2 according to the plasma power source supplied from the plasma power supply unit 460. [ At this time, the plasma is formed between the plasma electrode 450 and the ground electrode by an electric field applied between the plasma electrode 450 and the ground electrode according to a plasma power source. Accordingly, the reaction gas G2 supplied to the second gas injection space GSS2 is activated by the plasma and is sprayed onto the substrate W. [

Each of the gas injection modules 402, 404, 406, and 408 according to the fourth modified embodiment diffuses the source gas G1 through the spatially separated first gas injection space GSS1 into the gas injection regions 202, And the reaction gas G2 is activated through the plasma generated by the plasma electrode 450 inserted in the second gas injection space GSS2 to form the gas injection regions 202, A predetermined thin film is deposited on the substrate W by a CVD deposition process using the mutual reaction of the source gas G1 and the activated reaction gas G2 by downward spraying on the other side of the substrate W. [

25 is a cross-sectional view for explaining a fifth modified embodiment of the gas injection module in the substrate processing apparatus according to the first through third embodiments of the present invention, , 406, and 408 are further formed with a gas injection pattern member 440 in the first gas injection space GSS1. At this time, the gas injection pattern member 440 is the same as the gas injection pattern member 440 shown in FIG. 21, and therefore, the description thereof will be omitted.

The gas injection pattern member 440 increases the injection pressure of the source gas G1 supplied to the first gas injection space GSS1 so that the reaction gas injected from the second gas injection space GSS2 is injected into the first gas injection space GSS1, Thereby preventing diffusion, backwash, and penetration into the gas injection space GSS1. That is, when the reactive gas is diffused, backward flowed, and infiltrated into the first gas injection space GSS1, the source gas G1 and the reactive gas G2 may react in the first gas injection space GSS1 As a result, an abnormal thin film may be deposited on the inner wall of the first gas injection space GSS1, or an abnormal thin film of a powder component may be formed to generate particles falling on the substrate. Accordingly, the gas injection pattern member 440 functions to prevent an abnormal thin film from being deposited on the inner wall of the first gas injection space S1 or an abnormal thin film of the powder component, as in the above-described example.

Further, the gas injection pattern member 440 injects the source gas G1 downward, delays or stagnates the injection of the source gas G1 due to the plate shape in which the holes are formed, thereby reducing the amount of the source gas G1 And the use efficiency of the source gas G1 can be increased.

The gas injection pattern member 440 is installed in the first gas injection space GSS1 of the gas injection modules 402, 404, 406 and 408. However, the present invention is not limited to this, The reaction gas G2 that is also provided in the space GSS2 and supplied to the second gas injection space GSS2 may be injected downward to a predetermined pressure.

26 is a cross-sectional view for explaining a sixth modified embodiment of the gas injection module in the substrate processing apparatus according to the first to third embodiments of the present invention, , 406, and 408 are further formed with a plasma electrode 450 'in the first gas injection space GSS1. Hereinafter, only different configurations will be described.

First, the source gas G1 injected from each of the gas injection modules 402, 404, 406, and 408 shown in FIG. 25 is injected onto the substrate in an inactive state. However, it is necessary to activate the source gas G1 and spray it onto the substrate depending on the material of the thin film to be deposited on the substrate. Accordingly, each of the gas injection modules 402, 404, 406, and 408 according to the sixth modified embodiment activates the source gas G1 to be supplied and injects it onto the substrate.

Each of the gas injection modules 402, 404, 406, and 408 according to the sixth modified embodiment may further include a plasma electrode 450 'inserted in the first gas injection space GSS1. In the gas injection modules 402, 404, 406 and 408, the ground plate 412 of the gas injection frame 410 is provided with an insulating member insertion hole 412a 'communicating with the first gas injection space GSS1, And an insulating member 422 'is inserted into the insulating member insertion hole 412a'. An electrode insertion hole 422a 'communicating with the first gas injection space GSS1 is formed in the insulating member 422' and a plasma electrode 450 'is inserted into the electrode insertion hole 422a'.

The plasma electrode 450 'is inserted in the first gas injection space GSS1 and disposed in parallel with the ground barrier rib 416. [ The lower surface of the plasma electrode 450 'may be positioned on the same line as the lower surface of the ground barrier rib 416 or may have a predetermined height from the lower surface of the ground side wall 414 and the ground barrier rib 416. The ground side wall 414 and the ground barrier rib 416 together with the plasma electrode 450 'serve as a ground electrode for forming a plasma.

The plasma electrode 450 'forms a plasma from the source gas G1 supplied to the first gas injection space GSS1 according to the plasma power source supplied from the plasma power supply unit 460. [ At this time, the plasma is formed between the plasma electrode 450 'and the ground electrode by an electric field between the plasma electrode 450' and the ground electrode according to the plasma power source. Thus, the source gas G1 supplied to the first gas injection space GSS1 is activated by the plasma and is sprayed onto the substrate W. [

The plasma electrode 450 'disposed in the first gas injection space GSS1 and the plasma electrode 450 disposed in the second gas injection space GSS2 may include one plasma power supply unit or a different plasma power supply unit 460, 460 'may be supplied with the same or different plasma power.

Each of the gas injection modules 402, 404, 406 and 408 according to the sixth modified embodiment includes the plasma electrodes 450 and 450 inserted in the first and second gas injection spaces GSS1 and GSS2, 204, 206, 208 by individually activating each of the source gas G1 and the reactive gas G2 through the plasma generated by the source gas G1 and the plasma generated by the source gas G1, And the reaction gas G2 is used to deposit a predetermined thin film on the substrate W by a CVD deposition process.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: process chamber 110: chamber body
120: chamber lead 200: substrate support
300: substrate temperature regulator 302, 304, 306, 308: substrate temperature regulator
310: Temperature control frame 320: Substrate temperature control source member
400: gas injection part 402, 404, 406, 408: gas injection module
410: gas injection frame 420: gas supply hole

Claims (25)

A substrate processing apparatus for depositing a thin film on an upper surface of a substrate by spraying a process gas onto a substrate in a process space provided in a process chamber having a chamber body and a chamber lead covering an upper portion of the chamber body,
A substrate support for supporting and moving at least one of the substrates;
A substrate temperature regulator installed in the process chamber to regulate a temperature of the substrate moved by the substrate holder; And
And a gas injection unit installed in the process chamber so as to be spatially separated from the substrate temperature control unit and injecting a process gas into the substrate moved by the substrate support unit,
Wherein the chamber lid has a plurality of first module mounting holes and a plurality of second module mounting holes spatially separated from the first module mounting holes,
Wherein each of the substrate temperature regulating portion and the gas spraying portion is detachably mounted and spatially separated from the first module mounting hole and the second module mounting hole. delete The method according to claim 1,
Wherein the substrate temperature controller emits a substrate temperature adjusting source to each of a plurality of temperature control areas defined to be spatially separated between the chamber lid and the substrate support,
Wherein the gas injection portion injects the process gas into each of the plurality of gas injection regions defined between the plurality of temperature regulation regions. The method according to claim 1,
Wherein the substrate temperature regulator includes a plurality of substrate temperature regulation modules detachably mounted on the chamber lid to correspond to each of a plurality of temperature regulation regions defined to be spatially separated between the chamber lid and the substrate support,
Wherein each of the plurality of substrate temperature adjustment modules has the same or different areas. 5. The method of claim 4,
Wherein each of the plurality of substrate temperature regulation modules is mounted on the chamber lid so as to be spaced apart from the upper surface of the substrate at different intervals. The method according to claim 4 or 5,
Wherein each of the plurality of substrate temperature adjustment modules comprises:
A plurality of divided areas having the same or different areas; And
And a substrate temperature adjusting source member individually disposed in the plurality of divided regions. The method according to claim 6,
Wherein each of the plurality of divided regions is spaced apart from the upper surface of the substrate by the same or different spacing. The method according to claim 6,
Wherein the plurality of divided regions are spaced at different intervals from an upper surface of the substrate,
Wherein an interval between the plurality of divided regions and the substrate is closer to the substrate toward an outer side adjacent to an edge portion of the substrate supporting portion inside the substrate adjacent to the central portion of the substrate supporting portion. delete The method according to claim 4 or 5,
Further comprising a plurality of heat shielding frames disposed between each of the plurality of substrate temperature adjusting modules and the chamber lid to block heat transfer between the substrate temperature adjusting module and the chamber lid. . The method of claim 3,
Wherein the process gas is composed of at least one kind of gas selected from a source gas and a reactive gas,
Wherein the gas injection unit comprises a plurality of gas injection modules for injecting at least one kind of gas of the source gas and the reaction gas into each of the plurality of gas injection regions. delete delete delete delete delete A substrate processing method for depositing a thin film on an upper surface of a substrate by spraying a process gas onto a substrate in a process space provided in a process chamber including a chamber body and a chamber lead covering the chamber body,
Placing at least one substrate on a substrate support;
Adjusting a temperature of the substrate using a substrate temperature regulator provided in the chamber lid;
And locally injecting the process gas onto the substrate support using a gas injection unit installed in the chamber lid so as to be spatially separated from the substrate temperature control unit,
Wherein the substrate is alternately passed through the lower portion of each of the substrate temperature regulating portion and the gas spraying portion by driving the substrate supporting portion,
Wherein the chamber lid has a plurality of first module mounting holes and a plurality of second module mounting holes spatially separated from the first module mounting holes,
Wherein each of the substrate temperature regulating portion and the gas injecting portion is spatially separated from the first module mounting hole and the second module mounting hole so as to be detachably mounted. 18. The method of claim 17,
Wherein the substrate temperature regulator is discharged in each of a plurality of temperature regulation regions defined to be spatially separated on the substrate support,
Wherein the process gas is injected into each of a plurality of gas injection regions defined between the plurality of temperature regulation regions. 19. The method of claim 18,
Wherein each of the plurality of temperature control regions has the same or different areas. 20. The method according to claim 18 or 19,
Wherein the temperature control region adjusts the temperature of the substrate differently for each region. 21. The method of claim 20,
Wherein a temperature of the substrate is higher toward an outer side adjacent to an edge portion of the substrate supporting portion inside the substrate adjacent to the central portion of the substrate supporting portion. 19. The method of claim 18,
Wherein the process gas includes at least one of a source gas and a reactive gas,
Wherein at least one of the source gas and the reactive gas is injected into each of the plurality of gas injection regions. delete delete delete

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