KR101924056B1 - Cliche for offset printing and method for preparing the same - Google Patents

Abstract

The present application relates to an offset printing cliche and a method of making the same. An offset printing cliche according to an embodiment of the present application is an offset printing cliche including a groove pattern, wherein the groove pattern includes a reticular pattern composed of groove lines, Wherein a ratio of a maximum line width of the intersection to an etching depth of the intersection is less than 25,

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cliche for offset printing,

The present application relates to an offset printing cliche and a method of making the same.

BACKGROUND OF THE INVENTION [0002] Flat panel displays (FPDs) such as liquid crystal displays (LCDs) and plasma display panels (PDPs) are manufactured using various types of electrodes, such as electrodes, black matrixes, color filters, Processes for forming a pattern are required.

In such a pattern forming process, a method of forming a pattern by using a photosensitive resist and a photomask to obtain a photosensitive resist pattern selectively removed through exposure and development is widely used. Such a photomask process requires a lot of materials such as a photosensitive resist and a developing solution, and an expensive photomask must be used.

In order to solve such a problem, methods for directly printing a material to be patterned, such as a method using inkjet printing or laser transfer, without using a photosensitive resist, have been proposed. One such method is an offset printing method in which a patterned material is transferred to a blanket using a cliche and the pattern of the blanket is transferred onto a substrate.

The offset printing method using a cliche has advantages in that the material consumption is low and the process is simple and the process speed is faster than that of the inkjet printing or the laser transfer, compared with a process using a conventional photosensitive resist. However, there is a disadvantage in that each cliche has to have a different pattern on the substrate, and the manufacturing process of the cliche usually made of glass is complicated and expensive.

In the case of a conventional cliche (in the case of reverse offset and gravure offset), it is a general cliche manufacturing method to be manufactured by using a single etching method after patterning. When such a manufacturing method is used, There is a disadvantage in that a problem of floor contact occurs.

Therefore, in order to solve such problems, efforts have been made to hatch line widths corresponding to a wide area by fine lines or to solve them by a dry etching process. However, in this case as well, fine line hatching hatching, there is a problem of a loss of a desired conductivity and an increase in manufacturing cost when a dry etching process is used.

Korean Patent Publication No. 10-2009-0031337

The present application aims to provide an offset printing cliche and a method of manufacturing the same, which can solve the problem of poor printability at an intersection which may be caused by flooring in printing of a pattern having different line widths or pitches in the production of cliches do.

In one embodiment of the present application,

1. An offset printing cliche comprising a groove pattern,

Wherein the groove pattern includes a reticular pattern of groove lines,

Wherein the reticular pattern includes an intersection portion in which any one of the groove lines is tangential or intersecting,

Wherein the ratio of the maximum line width of the intersection to the etch depth of the intersection is less than 25.

Further, another embodiment of the present application,

Forming a mask pattern on the substrate, and

And etching the substrate using the mask pattern to form a groove pattern, the method comprising the steps of:

Wherein the groove pattern includes a reticular pattern of groove lines,

Wherein the reticular pattern includes an intersection portion in which any one of the groove lines is tangential or intersecting,

Wherein the ratio of the maximum line width of the intersection to the etch depth of the intersection is less than 25.

Further, another embodiment of the present application provides a printed matter printed using the offset printing cliche.

Another embodiment of the present application provides a touch panel including the printed matter.

According to one embodiment of the present application, there is a feature that it is possible to improve a printing defect phenomenon that may occur at the intersection of a line and a line or a line and a line of a conductive pattern. In particular, according to one embodiment of the present application, the ratio of the maximum linewidth of the intersection to the etch depth of the intersection can be adjusted by adjusting the angle at which any of the plurality of lines of the groove lines of the offset printing cliche are formed to cross each other , And thus the printing margin can be improved.

FIG. 1 schematically shows a conventional offset printing cliche and a conductive pattern manufactured using the same.
Figure 2 schematically illustrates the intersection of an offset printing cliche according to one embodiment of the present application.
Figs. 3 to 8 schematically show conductive patterns of Examples 1 to 4 and Comparative Examples 1 and 2 as one embodiment of the present application. Fig.
Figure 9 is a schematic representation of an offset printing cliche according to one embodiment of the present application.
FIGS. 10 to 12 schematically illustrate an offset printing cliche according to an embodiment of the present application and a conductive pattern manufactured using the same.

Hereinafter, the present invention will be described more specifically.

Generally, the touch screen uses an ITO-based conductive film, but such an ITO has a problem that its recognition speed is low due to its own RC delay when applied to a large area touch screen. Attempts have been made to introduce additional compensation chips to overcome this problem, but this raises the problem of rising prices. To overcome these problems, many companies are developing technologies for replacing ITO conductive films using metal patterns.

In addition, in the case of manufacturing a touch screen using a metal pattern, since the touch screen is composed of a combination of lines and surfaces in the screen portion and wiring configuration of the touch screen, the metal pattern necessarily has intersections between lines and lines or lines do. In this case, the metal pattern at the intersection has a certain angle, and as a result, the longest axial length in the overlapping area, which is the intersection, deviates from the printable range, so that the printing does not occur. Therefore, a solution for this is needed in the art.

The present application aims to provide an offset printing cliche and a method of manufacturing the same, which can improve a printing error phenomenon that may occur at the intersection and improve a printing margin.

An offset printing cliche according to an embodiment of the present application is an offset printing cliche including a groove pattern, wherein the groove pattern includes a reticular pattern composed of groove lines, Wherein a ratio of a maximum line width of the intersection to an etching depth of the intersection is less than 25,

An offset printing cliche for forming a conventional conductive pattern and a conductive pattern made using the same are schematically shown in FIG.

According to the results shown in FIG. 1, it can be seen that a disconnection phenomenon occurs at an intersection portion caused by superposition of a metal line and a metal line constituting the conductive pattern.

The present inventors have found that the breaking of the intersection is a value that can be changed according to the line width of the groove line of the offset printing cliche and the tangent angle formed by the groove lines which can be realized in forming a conductive pattern, And the longest axial length of the intersection is affected.

In one embodiment of the present application, the ratio of the maximum line width of the intersection to the etch depth of the intersection may be less than 25, and may be less than or equal to 20.

In one embodiment of the present application, the shape of the intersection may be circular, elliptical or polygonal, and the polygon may be rectangular, square, rectangular, parallelogram, rhombus, and the like.

The shape of the intersection may be a parallelogram, and the maximum line width of the intersection may be a length of a long axis of the parallelogram.

The maximum line width of the intersection can be expressed by the following equation (1), but is not limited thereto.

[Equation 1]

In the above equation (1)

x is the maximum line width of the intersection,

c is the length of the long side of the parallelogram,

is an angle at which any of a plurality of lines of conductive metal lines touch or intersect.

[Theta] in the above equation (1) may be more than 27 degrees but not more than 90 degrees, but is not limited thereto.

The intersection of the offset printing cliche according to one embodiment of the present application is schematically shown in FIG.

2, the maximum line width of the intersection is x, the lengths of the sides of the parallelogram are c and d, the angle at which a plurality of lines of the groove lines contact or cross each other is denoted by θ, The maximum line width of the intersection can be defined by the following equation.

From the above equations, the maximum line width of the intersection can be summarized by the following equation, and the equation (1) can be derived therefrom.

As described above, the maximum line width of the intersection changes according to the line width of the groove line and the angle at which any arbitrary plurality of groove lines contact or intersect with each other.

Using the equation (1), the maximum line width of the intersection was calculated by using the angle at which the line width of the groove line and the groove line intersect or intersect. Further, when the conductive pattern is formed by a printing method such as reverse offset printing, the etch depth of the cliche becomes an important factor when determining whether printing is possible. Accordingly, in the present application, the ratio of the maximum line width of the intersection to the etching depth of the intersection was calculated, and the results are shown in Table 1 below.

[Table 1]

In one embodiment of the present application, the groove pattern or groove line may have a line width of 10 mu m or less, may be 0.1 to 10 mu m, may be 0.2 to 8 mu m, or may be 1 to 5 mu m. The etch depth of the groove pattern or groove line may be 10 탆 or less, 2 탆 or less, and 10 to 300 nm. The pitch of the groove portion pattern is 600 mu m or less.

The opening ratio of the groove portion pattern, that is, the area ratio not covered by the pattern may be 70% or more, 85% or more, and 95% or more. Also, the opening ratio of the groove portion pattern may be 90 to 99.9%, but is not limited thereto.

In addition, a manufacturing method of an offset printing cliche according to another embodiment of the present application is characterized by comprising the steps of: forming a mask pattern on a substrate; and etching the substrate using the mask pattern to form a groove pattern, Wherein the grooved pattern includes a reticular pattern formed by grooved lines and the reticulated pattern includes an intersection formed by contacting or intersecting any of a plurality of lines of the grooved lines, And a ratio of a maximum line width of the intersection to an etching depth of the intersection is less than 25.

Especially, in the step of forming the groove pattern, the angle of the arbitrary plurality of lines of the groove lines tangentially or intersecting is adjusted so that the ratio of the maximum line width of the intersection to the line of sight of the intersection is adjusted to less than 25 Step < / RTI >

In one embodiment of the present application, a transparent substrate can be used as the substrate but is not particularly limited, and for example, glass, a plastic substrate, a plastic film, or the like can be used.

The present application also provides a printed matter printed using the offset printing cliche.

The printed matter may include at least two kinds of patterns having different line widths, and the difference in linewidth of the at least two kinds of patterns may be 15 mu m or more.

A conductive pattern, which is a printed matter according to one embodiment of the present application, is shown in Fig. It is possible to improve the printable area by arbitrarily changing the angle of the grooved line of the intersection in order to improve the printing defects that may occur due to the grooved line that is tangential to or below a certain angle as shown in Fig. Thus, the printing property of the intersection can be improved.

The present application also provides a touch panel including the printed matter.

The touch panel may include a printed material printed using an offset printing cliche according to the present invention, and other materials, manufacturing methods, and the like known in the art may be used.

For example, in a capacitive touch screen, a conductive substrate including a conductive pattern according to one embodiment of the present application can be used as a touch sensitive electrode substrate.

A touch screen according to an embodiment of the present application includes a lower substrate; An upper substrate; And an electrode layer provided on at least one side of a surface of the lower substrate contacting the upper substrate and a surface of the upper substrate contacting the lower substrate. The electrode layers may perform signal transmission and reception functions for X axis position detection and Y axis position detection, respectively.

An electrode layer provided on a surface of the lower substrate and an upper substrate of the lower substrate; And one or both of the upper substrate and the electrode layer provided on the surface in contact with the lower substrate of the upper substrate may be a conductive substrate according to one embodiment of the presently filed application. If only one of the electrode layers is a conductive substrate according to one embodiment of the present application, the other one may have a pattern known in the art.

When an electrode layer is formed on one surface of both the upper substrate and the lower substrate to form a two-layer electrode layer, an insulating layer or a spacer is interposed between the lower substrate and the upper substrate so as to maintain a constant interval between the electrode layers and prevent connection. . The insulating layer may include a pressure-sensitive adhesive or a UV or thermosetting resin.

The touch screen may further include a ground portion connected to the conductive pattern. For example, the ground portion may be formed at the edge portion of the surface of the substrate on which the conductive pattern is formed. In addition, at least one of an antireflection film, a polarizing film, and an inner fingerprint film may be provided on at least one side of the laminate including the conductive substrate. But may further include other types of functional films other than the above-described functional films according to design specifications. The touch screen may be applied to a display device such as an OLED display panel (PDP), a liquid crystal display (LCD), a cathode ray tube (CRT), or a PDP.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the following examples are intended to illustrate the present invention, and the scope of the present invention is not limited thereto.

< Example >

< Example  1>

After the photoresist was applied onto the Cr glass, the exposure process, the development process, the Cr etching process, and the hydrofluoric acid etching process were sequentially performed to form a groove pattern including a network pattern in the glass. At this time, the line width of the groove pattern is 3 mu m, the etching depth is 0.6 mu m, and the ratio of the maximum line width of the intersection to the etching depth of the intersection is 5.

The conductive pattern according to the first embodiment is schematically shown in FIG.

< Example  2>

Example 1 was carried out in the same manner as in Example 1, except that the etching depth was adjusted to 0.3 탆. At this time, the ratio of the maximum line width of the intersection to the etching depth of the intersection is 10.

The conductive pattern according to the second embodiment is schematically shown in FIG.

< Example  3>

Example 1 was carried out in the same manner as in Example 1, except that the etch depth was adjusted to 0.2 탆. At this time, the ratio of the maximum line width of the intersection to the etching depth of the intersection is 15.

The conductive pattern according to the third embodiment is schematically shown in Fig.

< Example  4>

Example 1 was carried out in the same manner as in Example 1, except that the etching depth was adjusted to 0.15 占 퐉. At this time, the ratio of the maximum line width of the intersection to the etching depth of the intersection is 20.

The conductive pattern according to the fourth embodiment is schematically shown in FIG.

< Comparative Example  1>

Example 1 was carried out in the same manner as in Example 1, except that the etching depth was adjusted to 0.12 탆. At this time, the ratio of the maximum line width of the intersection to the etching depth of the intersection is 25.

The conductive pattern according to Comparative Example 1 is schematically shown in FIG.

< Comparative Example  2>

Example 1 was carried out in the same manner as in Example 1, except that the etching depth was adjusted to 0.1 탆. At this time, the ratio of the maximum line width of the intersection to the etching depth of the intersection is 30.

The conductive pattern according to Comparative Example 2 is schematically shown in FIG.

As is apparent from the above results, when the ratio of the maximum line width of the intersection to the etching depth of the intersection is 25 or more, it can be seen that disconnection of the intersection occurs.

< Experimental Example >

The lines having the intersections of specific angles were arranged to verify the actual printability, and the results are shown in Figs. 10 to 12. As can be seen from the results of FIGS. 10 to 12, in the case of having intersections of a certain angle or less, it can be confirmed that the printing of the intersection is difficult to implement because the ratio of the maximum line width of the intersection to the etching depth increases.

Therefore, when the ratio of the maximum line width of the intersection to the etching depth of the intersection is less than 25, the angle of the intersection is adjusted to a predetermined angle or more through design modification beforehand, thereby improving the printing property.

As described above, according to one embodiment of the present application, there is a feature that it is possible to improve a printing defect phenomenon that may occur at the intersection of a line and a line or a line and a line of the conductive pattern. In particular, according to one embodiment of the present application, the ratio of the maximum linewidth of the intersection to the etch depth of the intersection can be adjusted by adjusting the angle at which any of the plurality of lines of the groove lines of the offset printing cliche are formed to cross each other , And thus the printing margin can be improved.

Claims (15)

1. An offset printing cliche comprising a groove pattern,
Wherein the groove pattern includes a reticular pattern of groove lines,
Wherein the reticulated pattern includes an intersection portion in which any one of the groove lines is tangential or intersecting,
The line width of the groove pattern is 1 to 5 mu m, the etching depth is 10 to 300 nm and the pitch is 600 mu m or less,
The ratio of the maximum line width of the intersection to the etching depth of the intersection is 20 or less,
The shape of the intersection is a parallelogram,
The maximum line width of the intersection is the length of the long axis of the parallelogram,
Characterized in that the maximum line width of the intersection is expressed by the following formula (1): &lt; EMI ID = 1.0 &gt;
[Equation 1]

In the above equation (1)
x is the maximum line width of the intersection,
c is the length of the long side of the parallelogram,
? is greater than 27 degrees and not greater than 90 degrees. delete delete delete delete delete delete Forming a mask pattern on the substrate, and
And etching the substrate using the mask pattern to form a groove pattern, the method comprising the steps of:
Wherein the groove pattern includes a reticular pattern of groove lines,
Wherein the reticulated pattern includes an intersection portion in which any one of the groove lines is tangential or intersecting,
The line width of the groove pattern is 1 to 5 mu m, the etching depth is 10 to 300 nm and the pitch is 600 mu m or less,
The ratio of the maximum line width of the intersection to the etching depth of the intersection is 20 or less,
The shape of the intersection is a parallelogram,
The maximum line width of the intersection is the length of the long axis of the parallelogram,
Wherein the maximum line width of the intersection is represented by the following formula (1): &lt; EMI ID = 1.0 &gt;
[Equation 1]

In the above equation (1)
x is the maximum line width of the intersection,
c is the length of the long side of the parallelogram,
? is greater than 27 degrees and not greater than 90 degrees. The method according to claim 8, wherein in the step of forming the groove pattern,
Adjusting an angle at which a plurality of lines of the groove lines are tangent or intersecting to adjust a ratio of a maximum line width of the intersection to a line height of the intersection to be 20 or less; Gt; delete delete delete delete A printed matter printed using the offset printing cliche of claim 1. A touch panel comprising the print of claim 14.

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