KR101920840B1 - 스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템 - Google Patents

스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템 Download PDF

Info

Publication number
KR101920840B1
KR101920840B1 KR1020157002725A KR20157002725A KR101920840B1 KR 101920840 B1 KR101920840 B1 KR 101920840B1 KR 1020157002725 A KR1020157002725 A KR 1020157002725A KR 20157002725 A KR20157002725 A KR 20157002725A KR 101920840 B1 KR101920840 B1 KR 101920840B1
Authority
KR
South Korea
Prior art keywords
magnet
polarity
substrate
cathodes
assemblies
Prior art date
Application number
KR1020157002725A
Other languages
English (en)
Korean (ko)
Other versions
KR20150037963A (ko
Inventor
안드레아스 클뢰펠
마르쿠스 하니카
에블린 쉐어
콘라트 슈바니츠
파비오 피에라리시
지안 리우
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150037963A publication Critical patent/KR20150037963A/ko
Application granted granted Critical
Publication of KR101920840B1 publication Critical patent/KR101920840B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020157002725A 2012-07-02 2012-07-02 스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템 KR101920840B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/062836 WO2014005617A1 (en) 2012-07-02 2012-07-02 Apparatus for coating a layer of sputtered material on a substrate and deposition system

Publications (2)

Publication Number Publication Date
KR20150037963A KR20150037963A (ko) 2015-04-08
KR101920840B1 true KR101920840B1 (ko) 2018-11-21

Family

ID=46395630

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157002725A KR101920840B1 (ko) 2012-07-02 2012-07-02 스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템

Country Status (6)

Country Link
EP (1) EP2867916A1 (ja)
JP (1) JP6113841B2 (ja)
KR (1) KR101920840B1 (ja)
CN (1) CN104704603B (ja)
TW (1) TWI627297B (ja)
WO (1) WO2014005617A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103993273B (zh) * 2014-05-09 2016-01-27 浙江上方电子装备有限公司 一种动静混合镀膜系统及利用其进行动静混合镀膜的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4038497C1 (ja) 1990-12-03 1992-02-20 Leybold Ag, 6450 Hanau, De
WO1998013532A1 (en) * 1996-09-24 1998-04-02 Deposition Sciences, Inc. A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
KR950000906B1 (ko) * 1991-08-02 1995-02-03 니찌덴 아넬바 가부시기가이샤 스퍼터링장치
CA2218279A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
GB0503401D0 (en) * 2005-02-18 2005-03-30 Applied Multilayers Ltd Apparatus and method for the application of material layer to display devices
CN201614406U (zh) * 2008-08-27 2010-10-27 梯尔涂层有限公司 沉积材料形成镀层的设备

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4038497C1 (ja) 1990-12-03 1992-02-20 Leybold Ag, 6450 Hanau, De
WO1998013532A1 (en) * 1996-09-24 1998-04-02 Deposition Sciences, Inc. A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering

Also Published As

Publication number Publication date
WO2014005617A1 (en) 2014-01-09
TWI627297B (zh) 2018-06-21
EP2867916A1 (en) 2015-05-06
TW201408804A (zh) 2014-03-01
KR20150037963A (ko) 2015-04-08
JP6113841B2 (ja) 2017-04-12
JP2015522715A (ja) 2015-08-06
CN104704603B (zh) 2017-07-28
CN104704603A (zh) 2015-06-10

Similar Documents

Publication Publication Date Title
US8137517B1 (en) Dual position DC magnetron assembly
US9028660B2 (en) Low impedance plasma
US7531071B2 (en) Magnet arrangement for a planar magnetron
CN102199754A (zh) 磁控溅射装置以及溅射方法
JPH09104977A (ja) 基板を被覆するための装置
KR101950857B1 (ko) 스퍼터 증착 소스, 스퍼터링 장치 및 그 동작 방법
KR101920840B1 (ko) 스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템
KR20150048142A (ko) 스퍼터링 장치
WO2018068833A1 (en) Magnet arrangement for a sputter deposition source and magnetron sputter deposition source
CN101646799B (zh) 用于大基片上沉积的磁控管源
US20150243484A1 (en) Plasma Source
KR20140080154A (ko) 마그네트론 및 이를 포함하는 마그네트론 스퍼터링 장치
JPH0693442A (ja) マグネトロン・スパッタカソード
KR100963413B1 (ko) 마그네트론 스퍼터링 장치
KR102219774B1 (ko) 기판을 코팅하기 위한 스퍼터 증착 장치 및 스퍼터 증착 프로세스를 수행하는 방법
KR20200083568A (ko) 스퍼터 성막 장치
CN107447195B (zh) 磁控管及磁控溅射系统
KR20050018716A (ko) 마그네트론 스퍼터링 장치 및 그 동작방법
JP2013199668A (ja) スパッタリング装置
JP2004099958A (ja) イオンプレーティング方法およびその装置
JP5621707B2 (ja) マグネトロンスパッタリングカソード及びスパッタリング装置
KR20080074311A (ko) 전기적 이동 자계를 이용한 사각 캐소딕 아크 소스
KR20150050070A (ko) 경사진 이온 소스, 이를 갖는 이온빔 처리 장치 및 이온빔 스퍼터링 장치

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant