KR101913614B1 - Time domain temperature sensor proportional to temperature - Google Patents

Time domain temperature sensor proportional to temperature Download PDF

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KR101913614B1
KR101913614B1 KR1020150101125A KR20150101125A KR101913614B1 KR 101913614 B1 KR101913614 B1 KR 101913614B1 KR 1020150101125 A KR1020150101125 A KR 1020150101125A KR 20150101125 A KR20150101125 A KR 20150101125A KR 101913614 B1 KR101913614 B1 KR 101913614B1
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temperature
proportional
current
voltage
signal
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KR20170009308A (en
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김수원
박세천
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에스케이하이닉스 주식회사
고려대학교 산학협력단
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

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  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

A temperature proportional current pre-charge type time-domain temperature sensor according to the present invention is a temperature-proportional-current pre-charge type time-domain temperature sensor that uses a band gap voltage independent of a change in ambient temperature and a temperature variable band gap current varying with the ambient temperature, A current generator for generating a current and a temperature fixed current independent of the ambient temperature; A reference temperature generator for generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the temperature fixed current; A proportional temperature generator for generating a proportional temperature signal including an offset which is a sum of the temperature fixed offset time and the temperature proportional time using the temperature variable current and the temperature fixed current; A logic signal generator for generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal; A counter for counting the offset-free logic signal according to a clock signal applied from the outside; And a control voltage generator for generating a precharge voltage while the precharge signal is enabled and generating a sense voltage while the precharge signal is disabled and delivering the sense voltage to the reference temperature generator and the proportional temperature generator.

Description

TIME DOMAIN TEMPERATURE SENSOR PROPORTIONAL TO TEMPERATURE [0001]

The present invention relates to a temperature sensor, and more particularly to a time-domain temperature sensor proportional to temperature.

Generally, a memory system includes a semiconductor memory for storing data and a memory controller for controlling operation of the semiconductor memory. Semiconductor memories are classified into volatile memories such as DRAM and SRAM, and nonvolatile memories such as EEPROM, FRAM, PRAM, MRAM, and Flash Memory. The volatile memory loses the stored data when it is interrupted, but the non-volatile memory preserves the stored data even when the power is turned off. Among nonvolatile memories, flash memory is widely used as a data storage medium due to its advantages of high programming speed, low power consumption, and large data storage.

The flash memory has a plurality of memory cells for data storage. Each memory cell stores single bit data or multi-bit data. A memory cell storing single bit data has two levels according to the threshold voltage distribution. The memory cell storing multi-bit data has four or more levels according to the threshold voltage distribution.

As a method for increasing the degree of integration of a flash memory cell, efforts are being made to reduce the cell size and to realize a multi-level cell.

Decreasing the cell size reduces the read margin because a plurality of threshold voltages (Vth) must be placed in the multi-level cell. In particular, the temperature shift characteristic of the flash memory cell is a factor limiting the threshold voltage margin of the multi-level cell. For example, flash memory cells have a phenomenon in which a threshold voltage is increased in a cold temp., And a threshold voltage in a hot period is lowered in a hot temp.

In order to efficiently compensate the temperature shift characteristic of the flash memory cell, a temperature sensor capable of detecting temperature information of the flash memory is required.

Conventionally, analog type temperature sensors and digital type temperature sensors have been developed for this purpose.

1 is a circuit diagram of an analog type temperature sensor according to the prior art.

An analog-type temperature sensor circuit according to the prior art temperature inverse voltage V BE with temperature proportional to the voltage difference two diodes bonded substrate of the same size to create a ΔV BE PNP transistors (110, 120), the temperature is directly proportional difference voltage amplifier amplifies the ΔV BE voltage amplifier 130 for outputting the V PTAT, temperature inverse voltage V BE with amplification voltage V plus the PTAT by adder 140 to generate a reference voltage Vref independent of temperature, and the amplified voltage V difference between the PTAT and the reference voltage Vref And an A / D converter 150 for converting the digital value to a digital value.

However, the temperature-proportional difference voltage? V BE of the bipolar transistor operating in the forward region is expressed by Equation (1).

Figure 112018079612862-pat00001

Where k is the boltsmann constant, q is the charge, T is the absolute temperature, and Is is the saturation current of the transistor. Is has a characteristic proportional to the temperature change, and V BE has a temperature coefficient of about -2 mV / ° C. Using Equation (1), the difference voltage? V BE between the two diode-connected substrate PNP transistors of the same size is expressed by Equation (2).

Figure 112018079612862-pat00002

Here, p represents the ratio of the current supplied to the bipolar transistor. According to Equation (2), it can be seen that the difference voltage? V BE between the two diode-connected substrate PNP transistors of the same size has a characteristic proportional to the temperature. However, an amplifier for amplifying this signal is needed because the temperature coefficient of the difference voltage? V BE between two diode-connected substrate PNP transistors of the same size is a very small value of about 0.1 mv / ° C. And, the dc offset of this amplifier greatly affects the accuracy of the temperature sensor.

FIG. 2A is a circuit diagram of a digital type temperature sensor according to the related art, and FIG. 2B is a waveform diagram of each part in a temperature pulse generator.

The digital type temperature sensor circuit according to the related art includes a temperature pulse generator 210 for converting information on a temperature change into a pulse width and a time digital converter 220 for converting pulses output from the temperature pulse generator into a digital signal do.

The temperature pulse generator 210 includes a first delay line 211 for generating a temperature proportional pulse having a width proportional to a delay offset value and a temperature change, a first delay line 211 for generating a temperature proportional pulse having a constant width corresponding to a delay offset value, A second delay line 213 for generating a pulse, and a temperature-proportional pulse outputted from the two delay lines and the temperature-independent pulse are subjected to exclusive-OR operation to remove the offset, thereby generating a pulse Pin having a width proportional to the temperature change.

Time digital converter 220 uses a cyclic delay line 225 to minimize the number of delay elements to reduce the effective area. The time digital converter 220 repeats the same process until the width of the input pulse is reduced to a constant interval every period and the pulse width becomes zero. The counter 227 counts the number of pulses output from the delay line 225 every period and outputs a digital value.

By the way, the digital type temperature sensor uses an inverter chain delay element in the delay line 225 in the time-to-digital converter 220 and is influenced not only by the temperature but also by the skew depending on the manufacturing process, There is a problem that the inverter chain delay element must be calibrated according to the manufacturing process.

The present invention provides a temperature-proportional time-domain temperature sensor that is temperature-independent other than the amount proportional to the temperature.

The present invention also provides a temperature proportional time-domain temperature sensor having a reference temperature generator capable of removing an offset value when converting a digital code.

The present invention also provides a temperature proportional time-domain temperature sensor having a reference temperature generator capable of offsetting the temperature variation of the sensing circuit.

A temperature proportional current pre-charge type time-domain temperature sensor according to the present invention is a temperature-proportional-current pre-charge type time-domain temperature sensor that uses a band gap voltage independent of a change in ambient temperature and a temperature variable band gap current varying with the ambient temperature, A current generator including a temperature variable current source for generating a current and a temperature fixed current source for generating a temperature fixing current irrespective of the ambient temperature; A reference temperature generator for generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the temperature fixed current; A proportional temperature generator for generating a proportional temperature signal including an offset which is a sum of the temperature fixed offset time and the temperature proportional time using the temperature variable current and the temperature fixed current; A logic signal generator for generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal; A counter for counting the offset-free logic signal according to a clock signal applied from the outside; And a control voltage generator for generating a precharge voltage while the precharge signal is enabled and generating a sense voltage while the precharge signal is disabled and delivering the sense voltage to the reference temperature generator and the proportional temperature generator.

The temperature-proportional voltage pre-charge type time-domain temperature sensor according to the present invention further includes a temperature-fixed current source for generating a temperature-fixed current irrespective of the ambient temperature; A control voltage generator for generating a temperature variable control voltage varying according to an ambient temperature by using a temperature fixed control voltage applied from the outside and the temperature fixed control voltage; A reference temperature generator for generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the temperature fixed current and the temperature fixed control voltage; A proportional temperature generator for generating an offset-containing proportional temperature signal including a temperature-fixed offset time and a temperature-proportional time using the temperature-fixed current and the temperature-variable control voltage; A logic signal generator for generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the offset-included proportional temperature signal and the temperature-fixed offset signal; And a counter for counting the offset-free logic signal according to an externally applied clock signal.

Also, the temperature proportional current pre-charge type time-domain temperature detection method according to the present invention is a temperature-proportional-current pre-charge type time-domain temperature detection method that uses a band gap voltage independent of a change in ambient temperature and a temperature variable band gap current proportional to the ambient temperature, Generating a temperature variable current and a temperature fixed current independent of the ambient temperature; Generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the reference temperature current; Generating an offset-containing proportional temperature signal including the temperature-fixed offset time and the temperature-proportional time using the temperature-variable current and the temperature-fixed current; Generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal; Counting the offset-free logic signal according to an externally applied clock signal; And generating a precharge voltage while the precharge signal is enabled, and generating a sense voltage while the precharge signal is disabled.

Also, the temperature-proportional voltage pre-charge type time-domain temperature detection method according to the present invention includes the steps of generating a temperature variable control voltage that varies according to an ambient temperature using a temperature-fixed control voltage applied from the outside and the temperature- ; Generating a temperature fixed offset signal corresponding to a temperature fixed offset time using a temperature fixed current independent of the ambient temperature and the temperature fixed control voltage; Generating an offset-containing proportional temperature signal including the temperature fixed offset time and the temperature proportional time using the temperature fixed current and the temperature variable control voltage; Generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal; And counting the offset-free logic signal according to an externally applied clock signal.

Also, the time-domain temperature sensor according to the present invention may be embedded in a flash memory.

According to the temperature proportional time-domain temperature sensor of the present invention, the amount of the signal other than the amount proportional to the temperature is independent of the temperature, and has a reference temperature generator capable of removing the offset value when the digital code is converted, Of the reference temperature.

Figure 1 is a circuit diagram of an analog type temperature sensor according to the prior art,
Figure 2a is a circuit diagram of a digital type temperature sensor according to the prior art,
Fig. 2B is a waveform diagram of each part in the temperature pulse generator of the digital type temperature sensor according to the related art,
Figure 3a is an overall block diagram of a temperature proportional current pre-charge type time-domain temperature sensor according to one embodiment of the present invention;
3B is a waveform diagram of each part in the temperature sensing unit of the temperature proportional current pre-charge type time-domain temperature sensor according to the embodiment of the present invention,
4A is a circuit diagram of a reference temperature generator according to an embodiment of the present invention,
FIG. 4B is a waveform diagram of a reference temperature generator according to an exemplary embodiment of the present invention. FIG.
5A is a circuit diagram of a proportional temperature generator according to an embodiment of the present invention,
FIG. 5B is a waveform diagram of a proportional temperature generator according to an embodiment of the present invention. FIG.
FIG. 6 is an overall block diagram of a temperature proportional voltage pre-charge type time-domain temperature sensor according to another embodiment of the present invention;
7A is a circuit diagram of a voltage precharge type proportional temperature generator according to another embodiment of the present invention,
7B is a waveform diagram of a proportional temperature generator according to another embodiment of the present invention.
8A is a circuit diagram of a temperature variable current source according to an embodiment of the present invention,
FIG. 8B is a graph showing the temperature vs. current of the temperature variable current source according to the embodiment of the present invention,
9 is a circuit diagram of a temperature-fixed current source according to an embodiment of the present invention,
10A is a circuit diagram of a temperature inversely proportional voltage generator for sensing according to an embodiment of the present invention, and Fig.
10B is a temperature versus voltage graph of the temperature inversely proportional voltage generator for sensing.

Further objects, features and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Before describing the present invention in detail, it is to be understood that the present invention is capable of various modifications and various embodiments, and the examples described below and illustrated in the drawings are intended to limit the invention to specific embodiments It is to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

According to the present invention, a temperature proportional time-domain temperature sensor is provided with a temperature proportional current precharge type time-domain temperature sensor and a temperature proportional voltage precharge type time-domain temperature sensor.

Hereinafter, a temperature proportional current pre-charge type time-domain temperature sensor and a temperature-proportional voltage pre-charge type time-domain temperature sensor according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3A is an overall block diagram of a temperature proportional current pre-charge type time-domain temperature sensor according to an embodiment of the present invention, and FIG. 3B is a waveform diagram of each part in the temperature sensing unit of the present invention.

The temperature proportional current pre-charge type time-domain temperature sensor according to an embodiment of the present invention includes a band gap circuit 310, a current generator 320, a reference temperature generator 330, a proportional temperature generator 340, a logic signal generator 350, a counter 360, and a control voltage generator 370.

The bandgap circuit 310 generates a stable constant voltage irrespective of the variation of the power supply voltage and the ambient temperature and the temperature variable bandgap currents I PTAT and BG proportional to the ambient temperature. The band gap circuit 310 is merely an ordinary matter familiar to those skilled in the art, and a detailed description thereof will be omitted in order not to obscure the essence of the present invention.

The current generator 320 includes a temperature variable current source 321 for generating a temperature variable current I PTAT that varies in proportion to the ambient temperature and a temperature fixed current source 323 and 325 for generating a temperature constant current I ZTC independent of the ambient temperature. .

The reference temperature generator 330 generates the temperature fixed offset signal S1 corresponding to the temperature fixed offset time T REF using the temperature fixed current I ZTC .

The proportional temperature generator 340 generates an offset-containing proportional temperature signal S2 including a temperature fixed offset time and a time proportional to the temperature using the temperature variable current I PTAT and the temperature constant current I ZTC .

The logic signal generator 350 generates an offset-free logic signal S3 corresponding to the time proportional to the actual temperature by exclusive-ORing the proportional temperature signal S2 with the offset and the temperature-fixed offset signal S1. Here, the offset-free logic signal S3 is a value excluding an offset value.

The counter 360 counts and outputs the logic signal S3 according to the clock signal Clk applied from the outside.

The control voltage generator 370 generates the precharge voltage Vpre while the precharge signal PRECHb is enabled, and generates the sense voltage Vsen while the precharge signal PRECHb is disabled.

Also, the temperature proportional current pre-charge type time-domain temperature detection method according to the present invention is a temperature-proportional-current pre-charge type time-domain temperature detection method using a temperature-variable bandgap current proportional to the ambient temperature and a band- Generating a current and a temperature fixed current independent of the ambient temperature; Generating a temperature fixed offset signal corresponding to a temperature fixed offset time using a reference temperature current; Generating an offset-containing proportional temperature signal including a temperature-fixed offset time and a time proportional to the temperature using a temperature-variable current and a temperature-fixed current; Logic-combining the proportional temperature signal and the temperature-fixed offset signal to generate an offset-free logic signal corresponding to a time proportional to the temperature; Counting an offset-free logic signal according to a clock signal applied from the outside; And generating a precharge voltage while the precharge signal is enabled and generating a sense voltage while the precharge signal is disabled.

FIG. 4A is a circuit diagram of a reference temperature generator according to an embodiment of the present invention, and FIG. 4B is a waveform diagram of components of a reference temperature generator according to an embodiment of the present invention.

The reference temperature generator according to an embodiment of the present invention applies a power supply voltage to the reference temperature sense node while the precharge signal is enabled and turns on the precharge voltage to generate a reference voltage corresponding to the precharge voltage The precharge voltage is supplied and held, the potential of the reference temperature capacitor node is lowered by passing the amplified temperature fixed current from the reference temperature capacitor node to the ground side while the precharge signal is disabled, and the potential of the reference temperature capacitor node is sensed The potential of the reference temperature sense node is made equal to the potential of the reference temperature sensor node and the inverted signal obtained by inverting the potential level of the reference temperature sense node is logically combined with the precharge signal, It is possible to generate a temperature fixed offset signal having a width of time .

The reference temperature generator according to an embodiment of the present invention includes a switching device M1 410, a switching device M2 420, a capacitor C 430 disposed between the reference temperature capacitor node Nc and ground, a switching device M3 440, an amplification temperature constant current source 450, an inverter IN1 460, and a logic element 470.

The switching device M1 (410) is turned on while the precharge signal PRECHb is enabled to apply the power supply voltage V DD to the reference temperature sense node Ns.

Switching element M2 (420) is a pre-charge voltage V pre is turned on to precharge the capacitor to a reference temperature corresponding node Nc voltage V pre - supplies the V th, M2.

The switching device M3 440 passes the amplified temperature fixed current I ZTCA while the precharge signal PRECHb is disabled.

The amplification temperature fixed current source 450 is disposed between the switching device M3 440 and the ground to feed the amplification temperature constant current I ZTCA to the ground.

The inverter IN1 460 inverts the voltage signal applied to the reference temperature sense node Ns.

The logic element 470 performs exclusive OR operation of the precharge signal PRECHb and the output of the inverter IN1 460 to output a temperature fixed offset signal S1 having the width of the temperature fixed offset time T REF .

The amplification temperature constant current source 450 generates an amplification temperature constant current amplified to a predetermined magnitude suitable for use in the reference temperature generator by using the temperature fixed current source 325, A technique for generating an amplified temperature fixed current by an amplification temperature fixed current source is only a matter of course for those skilled in the art, so a detailed description thereof will be omitted.

The operation of the reference temperature generator according to an embodiment of the present invention is divided into a precharge period T PRECH and a sense period T EVALUATION .

i) Pre-charge period (T PRECH )

When the precharge signal PRECHb which is enabled turns on the switching device M1 410, the power supply voltage V DD is applied to the reference temperature sense node Ns connected to the drain terminal D of the switching device M1 410. [

Switching element M2 (420) is the pre-charging is enabled and turns on the voltage V pre, pre-charging the corresponding voltage V pre to a reference temperature of the capacitor node Nc is connected to the source terminal S of the switching element M2 (420) - the V th, M2 Supply.

ii) Sense interval (T EVALUATION )

The precharge signal PRECHb which is disabled turns off the switching device M1 410. [ The switching device M2 420 is controlled to turn off the sense voltage V sen . When the precharge signal PRECHb that is disabled turns on the switching device M3 440, the amplified temperature fixed current source I ZTCA 450 flows the amplified temperature fixed current I ZTCA to the ground to discharge the reference temperature capacitor node Nc. The reference voltage for the capacitor temperature node Nc Nc V sense the corresponding voltage V sen - If V th, lower than M2, the switching element M2 (420) is turned off. Thus, the reference temperature sense node Ns and the reference temperature capacitor node Nc share charge, so that the reference temperature sense node potential V Ns and the reference temperature capacitor node potential V Nc fall to the same level. However, since the capacitance of the reference temperature sense node Ns is much smaller than the capacitance of the reference temperature capacitor node Nc, the reference temperature sense node potential V Ns varies along the reference temperature capacitor node potential V Nc . When the reference temperature sense node potential V Ns transitions from the "H" level to the "L" level, the temperature fixed offset signal S1 having the width of the temperature fixed offset time T REF is applied to the reference temperature output node N A of the logic element 470 .

The temperature-fixed offset time T REF is expressed by Equation (3).

Figure 112018079612862-pat00003

FIG. 5A is a circuit diagram of a proportional temperature generator according to an embodiment of the present invention, and FIG. 5B is a waveform diagram of each part of a proportional temperature generator according to an embodiment of the present invention.

A proportional temperature generator according to an embodiment of the present invention applies a power supply voltage to a proportional temperature sense node while an enable precharge signal is applied and turns on a precharge voltage to apply a precharge voltage corresponding to a proportional temperature capacitor node And precharges the proportional temperature capacitor node to the proportional temperature capacitor node potential while the proportional temperature precharge signal that is enabled is applied. While the precharge signal is disabled, the amplification temperature fixed current is passed from the proportional temperature capacitor node to the ground side. When the potential of the proportional temperature capacitor node becomes lower than the sense corresponding voltage corresponding to the sense voltage, the potentials of the proportional temperature sense node and the proportional temperature capacitor node are made equal. The inverted signal obtained by inverting the potential level applied to the proportional temperature sense node is logically combined with the precharge signal to output an offset-containing proportional temperature signal including a temperature-fixed offset time and a time proportional to the temperature.

To this end, the proportional temperature generator according to an embodiment of the present invention includes a switching device M1 510, a switching device M2 520, a capacitor C 530 disposed between the proportional temperature capacitor node Nc_PTAT and the ground, a switching device M3 540, an amplification temperature constant current source I ZTCA 550, an inverter IN2 560, a logic element 570, a switching element M6 580, and an amplification temperature variable current source I PTATA 590.

The switching device M1 510 is turned on while the precharge signal PRECHb is enabled to apply the power supply voltage V DD to the proportional temperature sense node Ns_PTAT.

Switching element M2 (520) is turned on to pre-charge voltage V pre precharge voltage V pre corresponding to the proportional temperature capacitor node Nc_PTAT - supplies the V th, M2.

The switching device M3 540 passes the amplified temperature fixed current I ZTCA while the precharging signal PRECHb to be disabled is applied.

The amplifying temperature fixed current source I ZTCA 550 is disposed between the switching device M3 540 and the ground to feed the amplified temperature fixed current I ZTCA to the ground.

The inverter IN2 560 inverts the voltage signal applied to the proportional-temperature sense node Ns_PTAT.

The logic element 570 performs exclusive OR operation of the precharge signal PRECHb and the output of the inverter IN2 560 to output an offset-containing proportional temperature signal S2 including a temperature-fixed offset time and a time proportional to the temperature.

The switching device M6 580 is turned on while the proportional temperature precharge signal PTAT_PRECHb is enabled to precharge the proportional temperature capacitor node Nc_PTAT to the proportional temperature capacitor node potential V c_PTAT .

The amplification temperature variable current source I PTATA 590 is disposed between the switching device M6 580 and the proportional temperature capacitor node Nc_PTAT.

The amplification temperature fixed current source 550 generates a current amplified to a predetermined magnitude suitable for use in the proportional temperature generator by using the temperature fixed current source 323. The amplifying temperature variable current source I PTATA 590 generates a current amplified by a temperature variable current source 321 to a predetermined magnitude suitable for use in a proportional temperature generator.

The operation of the proportional temperature generator according to an embodiment of the present invention is divided into a precharge period T PRECH and a sense period T EVALUATION , wherein the precharge period T PRECH includes a proportional temperature precharge period T PTAT_PRECH .

i) Pre-charge period (T PRECH )

When the switching element M1 510 is turned on in the precharge signal PRECHb to be enabled, the power supply voltage V DD is applied to the proportional-temperature sense node Ns_PTAT connected to the drain terminal D of the switching element M1 510. Switching element M2 (520) is turned on to pre-charge voltage V pre, pre-charging the corresponding voltage V pre to proportional temperature capacitor node Nc_PTAT connected to the source terminal S of the switching element M2 (520) - and supplies the V th, M2.

Proportional to temperature node capacitor Nc_PTAT the precharge voltage corresponding to V pre - V th is, when stabilized with M2, the switching device M6 (580) to enable the precharge signal proportional to temperature PTAT_PRECHb that are turned on. Proportional to the temperature the capacitor node flows through the Nc_PTAT amplification temperature variable current source I PTATA amplification temperature variable current I PTATA by 590, the proportional temperature pre-charging period (T PTAT _ PRECH) proportional to the capacitor node Nc_PTAT while the proportion capacitor node potential V c _ Precharged with PTAT .

ii) Sense interval (T EVALUATION )

When the precharge signal PRECHb is disabled, the switching device M1 510 is turned off. The switching device M2 520 is controlled to turn off the sense voltage V sen . When the proportional temperature precharge signal PTAT_PRECHb is disabled, the switching device M6 580 is turned off and the switching device M3 540 is turned on to the disabled precharge signal PRECHb to turn the proportional temperature capacitor node Nc_PTAT to the amplified temperature fixed current I Discharge by ZTCA .

When the proportional temperature capacitor node voltage V Nc_PTAT of the proportional temperature capacitor node Nc_PTAT becomes lower than the sense corresponding voltage V sen - V th, M2 , the switching device M2 520 is turned on. Accordingly, the proportional temperature sense node Ns_PTAT and proportional temperature Nc_PTAT capacitor node is to share the electric charge proportional to the temperature sense node potential V _ Ns PTAT proportional to the temperature of the capacitor node potential V Nc_PTAT is lowered to the same level.

However, since the capacitance of the proportional-temperature sense node Ns_PTAT is much smaller than the capacitance of the proportional-temperature capacitor node Nc_PTAT, the proportional-temperature sense node potential V Ns_PTAT varies along the proportional-temperature capacitor node potential V Nc_PTAT . When the proportional temperature sense node potential V Ns_PTAT transitions from the "H" level to the "L" level, the proportional temperature output node NB of the logic element 570 is supplied with a temperature fixed offset time and a time

Figure 112018079612862-pat00004
), The proportional temperature signal S2 including the offset is output.

The time including the temperature fixed offset time and the time proportional to the temperature (

Figure 112018079612862-pat00005
) ≪ / RTI >

Figure 112018079612862-pat00006

The pulse width (T PTAT ) of the logic signal S3 corresponding to the time proportional to the actual temperature from which the offset value output from the logic signal generator 350 is removed is expressed by Equation (5).

Figure 112018079612862-pat00007

6 is an overall block diagram of a temperature proportional voltage precharging type time-domain temperature sensor according to another embodiment of the present invention.

The temperature proportional voltage precharging type time-domain temperature sensor according to another embodiment of the present invention includes a bandgap circuit 610, a current generator 620, a reference temperature generator 630, a proportional temperature generator 640, a logic signal generator 650, a counter 660, and a control voltage generator 670.

The bandgap circuit 610 generates a stable constant voltage that is independent of variations in the power supply voltage and the ambient temperature. The band gap circuit 610 is merely an ordinary matter familiar to those skilled in the art and a detailed description thereof will be omitted in order not to obscure the essence of the present invention.

The current generator 620 generates a temperature fixed current I ZTC that is independent of the ambient temperature.

The reference temperature generator 630 generates the temperature fixed offset signal S1 corresponding to the temperature fixed offset time T REF using the temperature fixed current I ZTC and the temperature fixed control voltage V con .

Proportional temperature generator 640 generates a temperature constant-current I ZTC and temperature variable control voltage V con _ of using the PTAT contains the offset value comprises a time proportional to the temperature fixed offset time and temperature proportional temperature signal S2.

The logic signal generator 650 generates an offset-free logic signal S3 corresponding to a time proportional to the actual temperature at which the offset value is removed by exclusive-ORing the offset-containing proportional temperature signal S2 and the temperature-fixed offset signal S1.

The counter 660 counts and outputs the offset-free logic signal S3 according to the externally applied clock signal Clk.

Control voltage generator 670 generates a fixed-temperature control voltage V con and temperature variable control voltage V con_PTAT. Temperature fixed control voltage V con and temperature variable control voltage V con _ PTAT is generates the precharge voltage V pre and the proportional temperature precharge voltage V pre _ PTAT, and the precharge signal PRECHb while enabled the precharge signal PRECHb each Generates the sense voltage V sen while it is disabled. Here, the fixing temperature control voltage V con is the voltage applied from the outside, the temperature variable control voltage V con _ is a PTAT voltage reflecting the temperature of the internal memory.

According to another aspect of the present invention, there is provided a temperature-proportional voltage pre-charge type time-domain temperature detection method comprising the steps of: generating a temperature variable control voltage that varies according to an ambient temperature using a temperature-fixed control voltage and a temperature- Generating a temperature-fixed offset signal corresponding to a temperature-fixed offset time using a temperature-fixed current and a temperature-fixed control voltage that are independent of an ambient temperature; Generating a temperature fixed offset signal corresponding to a temperature fixed offset time using a temperature fixed current and a temperature fixed control voltage; Generating an offset-containing proportional temperature signal including a temperature-fixed offset time and a time proportional to the temperature using a temperature-fixed current and a temperature-variable control voltage; Logically combining an offset-containing proportional temperature signal and a temperature-fixed offset signal to generate an offset-free logic signal corresponding to a time proportional to the temperature; And counting the offset-free logic signal according to an externally applied clock signal.

FIG. 7A is a circuit diagram of a voltage precharge type proportional temperature generator according to another embodiment of the present invention, and FIG. 7B is a waveform diagram of each part of a proportional temperature generator according to another embodiment of the present invention.

The voltage precharge type proportional temperature generator according to another embodiment of the present invention includes a switching device M1 710, a switching device M2 720, a capacitor C 730 disposed between the proportional temperature capacitor node Nc_PTAT and ground, An M3 740, an amplification temperature constant current source I ZTCA 750, an inverter IN3 760, and a logic element 770.

The switching device M1 710 is turned on while the precharge signal PRECHb is enabled to apply the power supply voltage VDD to the proportional temperature sense node Ns_PTAT.

Switching element M2 (720) is turned on to pre-charge voltage V pre precharge voltage V pre corresponding to the proportional temperature capacitor node Nc_PTAT - supplies the V th, M2.

The switching device M3 740 passes the amplified temperature fixed current I ZTCA while the precharging signal PRECHb to be disabled is applied.

The amplifying temperature fixed current source I ZTCA 750 is disposed between the switching device M3 740 and the ground and flows the amplified temperature constant current I ZTCA to the ground. Here, the amplifying temperature constant current source 750 generates a current amplified to a predetermined magnitude suitable for use in the proportional temperature generator by using the temperature fixed current source 623.

The inverter IN3 760 inverts the voltage signal applied to the proportional-temperature sense node Ns_PTAT.

The logic element 770 performs exclusive OR operation of the precharge signal PRECHb and the output of the inverter IN3 760 to output an offset-containing proportional temperature signal S2 including a temperature-fixed offset time and a time proportional to the temperature.

The operation of the voltage precharge type proportional temperature generator according to another embodiment of the present invention is divided into a precharge period T PRECH and a sense period T EVALUATION .

i) Pre-charge period (T PRECH )

When the switching element Ml 710 is turned on in the precharge signal PRECHb to be enabled, the power supply voltage V DD is applied to the proportional-temperature sense node Ns_PTAT connected to the drain terminal D of the switching element Ml 710. Switching element M2 (720) is turned on in proportion to the temperature pre-charge voltage V pre _ PTAT, the switching element in proportion temperature capacitor node precharged proportional temperature in Nc_PTAT corresponding voltage connected to the source terminal S of the M2 (720) V pre_PTAT - V th And M2 .

ii) Sense interval (T EVALUATION )

When the precharge signal PRECHb is disabled, the switching device Ml 710 is turned off. The switching device M2 720 is controlled to turn off the sense voltage V sen . The switching element M3 740 is turned on to the disabled precharge signal PRECHb to discharge the proportional temperature capacitor node Nc_PTAT to the amplified temperature fixed current IZTCA .

When the proportional temperature capacitor node voltage V Nc_PTAT of the proportional temperature capacitor node Nc_PTAT becomes lower than the sense corresponding voltage V sen - V th, M2 , the switching device M2 720 is turned on. Accordingly, the proportional temperature sense node Ns_PTAT and proportional temperature Nc_PTAT capacitor node is to share the electric charge proportional to the temperature sense node potential V _ Ns PTAT proportional to the temperature of the capacitor node potential V Nc_PTAT is lowered to the same level.

However, since the capacitance of the proportional-temperature sense node Ns_PTAT is much smaller than the capacitance of the proportional-temperature capacitor node Nc_PTAT, the proportional-temperature sense node potential V Ns_PTAT varies along the proportional-temperature capacitor node potential V Nc_PTAT . When the proportional temperature sense node potential V Ns_PTAT transitions from the "H" level to the "L" level, the proportional temperature output node NB of the logic element 770 is supplied with the temperature fixed offset time and the temperature proportional time

Figure 112018079612862-pat00008
), The proportional temperature signal S2 including the offset is output.

Time including temperature fixed offset time and temperature proportional time (

Figure 112018079612862-pat00009
) ≪ / RTI >

Figure 112018079612862-pat00010

The pulse width (T PTAT ) of the offset-free logic signal S3 corresponding to the time proportional to the actual temperature from which the offset value output from the logic signal generator 650 is removed is represented by Equation (7).

Figure 112018079612862-pat00011

FIG. 8A is a circuit diagram of a temperature variable current source according to an embodiment of the present invention, and FIG. 8B is a graph of temperature versus current of a temperature variable current source according to an embodiment of the present invention.

The temperature variable current source according to one embodiment of the present invention is used in the current generator 320 of the temperature proportional current pre-charge type time-domain temperature sensor.

The temperature-variable current source according to an embodiment of the present invention includes: an A-fold current mirror unit that mirrors the temperature variable bandgap current A times the A-fold mirror current; A B-fold current mirror unit for passing a B-fold mirror current by mirroring the temperature fixed current by B times; And a subtracting unit for subtracting the mirror current from the A-fold mirror current by a factor of B to output a temperature-variable current.

Temperature variable current source is a temperature variable bandgap current I PTAT, the temperature variable bandgap current source 810, the temperature variable bandgap current I PTAT, the temperature variable bandgap mirrors BG for generating BG in accordance with one embodiment of the present invention Temperature variable bandgap current mirror 720 through which mirror currents I PTAT and BG pass, temperature variable bandgap mirror current amplified by A times, temperature variable bandgap amplification current A * I PTAT, A current mirror 730, a temperature fixed current source 740 for generating a temperature fixed current I ZTC irrespective of changes in the ambient temperature, a temperature fixed current mirror 750 for passing the temperature constant current I ZTC , a temperature fixed current B An amplification temperature fixed current mirror 760 for amplifying and passing the amplified temperature fixed current B * I ZTC , and a subtractor 770 for outputting a temperature variable current I PTAT obtained by subtracting the amplified temperature fixed current from the temperature variable band gap current artillery The. This is to make the temperature variable current I PTAT at cold temperature almost 0uA.

The temperature variable current source according to an embodiment of the present invention is used as a current source at the time of pre-charge of a current proportional to temperature. The generated temperature variable current I PTAT is expressed by Equation (8).

Figure 112018079612862-pat00012

Here, the temperature variable band gap current source 810 may be disposed in the bandgap circuit.

9 is a circuit diagram of a temperature-fixed current source according to an embodiment of the present invention.

The temperature fixed current source according to the embodiment of the present invention amplifies the difference between the band gap voltage V BG and the resistance node voltage V R to provide a constant level voltage to the resistor node N R so that the reference current I REF flows constantly do. The reference current I REF is expressed by Equation (9).

Figure 112018079612862-pat00013

The temperature fixed current I ZTC is a value obtained by mirroring the reference current I REF using the current mirror 930, and is determined by the width / length ratio of the two transistors in the current mirror.

Figure 112018079612862-pat00014

At this time, the reference current I REF should be independent of the temperature, and the temperature characteristic of the resistor R can be compensated by properly mixing the constant-temperature coefficient and the sub-temperature coefficient. It will be apparent to those skilled in the art that a detailed description thereof will not be given.

FIG. 10A is a circuit diagram of a temperature variable control voltage generator for sensing according to an exemplary embodiment of the present invention, and FIG. 10B is a temperature vs. voltage graph of a variable temperature control generator for sensing.

The temperature variable control generator for sensing according to an embodiment of the present invention is used in a temperature proportional voltage precharge type time-domain temperature sensor. The variable temperature control voltage generator for sensing according to an embodiment of the present invention includes a switching device 1010 that is turned on at a gate voltage V G , a unit amplifier (not shown) that amplifies a source voltage VA applied to a source terminal of the switching device 1010 1020), and an output amplifier 1030 that amplifies the difference between the temperature-fixed control voltage V con and the source voltage VA at a resistance ratio and outputs the temperature variable control voltage V con_PTAT .

The threshold voltage V th of the switching element 1010 has a characteristic of linearly decreasing as the temperature rises. Since the source voltage V A applied to the source terminal of the switching element 1010 is V A = V G - V th , the source voltage V A becomes lower as the temperature increases. 10B, the temperature variable control voltage V con_PTAT output from the output amplifier 1030 becomes linearly lower as the temperature increases.

Figure 112018079612862-pat00015

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It is to be understood that various changes and modifications may be made without departing from the scope of the appended claims.

310: Band gap circuit
320: current generator
330: Reference temperature generator
340: Proportional temperature generator
350: Logic signal generator
360: Counter
370: Control voltage generator

Claims (17)

A temperature variable current source for generating a temperature variable current that varies depending on the ambient temperature by using a band gap voltage independent of a change in ambient temperature and a temperature variable band gap current varying in accordance with the ambient temperature; A current generator including a temperature fixed current source for generating a fixed current;
A reference temperature generator for generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the temperature fixed current;
A proportional temperature generator for generating a proportional temperature signal including an offset which is a sum of the temperature fixed offset time and the temperature proportional time using the temperature variable current and the temperature fixed current;
A logic signal generator for generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal;
A counter for counting the offset-free logic signal according to a clock signal applied from the outside; And
A control voltage generator for generating a precharge voltage while the precharge signal is enabled and generating a sense voltage while the precharge signal is disabled and delivering the sense voltage to the reference temperature generator and the proportional temperature generator,
Temperature-proportional-current pre-charge type time-domain temperature sensor.
The apparatus of claim 1, wherein the reference temperature generator comprises:
Supplying a precharge voltage corresponding to the precharge voltage to the reference temperature capacitor node by applying a power supply voltage to the reference temperature sense node while the precharge signal is being enabled, The precharge signal is disabled while the amplified temperature fixed current corresponding to the temperature fixed current is passed from the reference temperature capacitor node to the ground side to lower the potential of the reference temperature capacitor node and the potential of the reference temperature capacitor node The reference temperature sense node and the reference temperature capacitor node are made equal in potential and the inverted signal obtained by inverting the potential level of the reference temperature sense node and the precharge signal are set to be equal to the sense voltage corresponding to the sense voltage, And the temperature fixed offset signal Causing
Temperature Proportional Current Precharged Time Domain Temperature Sensor.
The apparatus of claim 2, wherein the reference temperature generator comprises:
A switching device M1 (410) which is turned on while the precharge signal is enabled to apply the power supply voltage to the reference temperature sense node;
A switching device M2 420 which is turned on by the pre-charge voltage and supplies the pre-charge voltage to the reference temperature capacitor node;
A first capacitor disposed between the reference temperature capacitor node and the ground;
A switching device M3 (440) for passing the amplification temperature fixing current while the precharge signal is disabled;
An amplifying temperature fixed current source disposed between the switching device M3 440 and the ground to flow the amplified temperature fixing current to the ground;
An inverter IN1 (460) for inverting a voltage signal applied to the reference temperature sense node; And
And outputs the temperature-fixed offset signal by exclusive-ORing the precharge signal and the output of the inverter IN1 (460)
Temperature-proportional-current pre-charge type time-domain temperature sensor.
The apparatus of claim 1, wherein the proportional temperature generator comprises:
The pre-charge voltage is applied to the proportional temperature sense node while the pre-charge signal is enabled, the pre-charge voltage is supplied to the proportional temperature capacitor node by turning on the pre-charge voltage, While the precharge signal is disabled, the pre-charge temperature capacitor node is precharged to the potential of the proportional temperature capacitor node having a potential proportional to the change in the ambient temperature, The potential of the proportional temperature sense node is made equal to the potential of the proportional temperature capacitor node when the potential of the proportional temperature capacitor node becomes lower than the sense corresponding voltage corresponding to the sense voltage, The potential level applied to the temperature sense node By a combination of logic inversion by inverting signal and said precharge signal to output a signal proportional to the temperature it includes the offset
Temperature Proportional Current Precharged Time Domain Temperature Sensor.
The apparatus of claim 4, wherein the proportional temperature generator comprises:
A switching device M1 (510) which is turned on while the precharge signal is enabled and applies the power supply voltage to the proportional temperature sense node;
A switching device M2 (520) which is turned on to supply the precharge voltage to the proportional temperature capacitor node;
A second capacitor disposed between the proportional temperature capacitor node and the ground;
A switching device M3 (540) for passing the amplification temperature fixing current while the precharge signal is disabled;
An amplifying temperature fixed current source disposed between the switching device M3 540 and the ground to flow the amplified temperature fixing current to the ground;
An inverter IN2 (560) for inverting a voltage signal applied to the proportional temperature sense node;
A logic element for exclusive-ORing the precharge signal and the output of the inverter IN2 (560) and outputting the offset-containing proportional temperature signal;
A switching device M6 (580) that is turned on while the proportional temperature precharge signal is enabled to precharge the proportional temperature capacitor node to the proportional temperature capacitor node potential; And
And an amplifying temperature variable current source (540) which is disposed between the switching element M6 (580) and the proportional temperature capacitor node and flows an amplifying temperature variable current corresponding to the temperature variable current,
Temperature proportional current pre-charge type time-domain temperature sensor.
The temperature variable current source according to claim 1,
An A-fold current mirror unit for mirroring the temperature variable bandgap current by a factor A to pass an A-fold mirror current;
A B-fold current mirror unit for passing the B-fold mirror current by mirroring the temperature fixed current by B times; And
A subtracter for subtracting the mirror current from the A-fold mirror current by a factor of B to output the temperature-
Temperature-proportional-current pre-charge type time-domain temperature sensor.
The temperature variable current source according to claim 1,
A temperature variable bandgap current mirror for mirroring the temperature variable bandgap current to pass a temperature variable bandgap mirror current;
A temperature variable bandgap amplifying current mirror for amplifying the temperature variable bandgap mirror current by A times and passing a temperature variable bandgap amplifying mirror current;
A temperature-fixed current mirror for mirroring the temperature-fixed current to pass a temperature-fixed mirror current;
An amplification temperature-fixed current mirror for amplifying the temperature-fixed mirror current by B times and passing the temperature-fixed amplified mirror current; And
A subtracting unit for subtracting the temperature-fixed amplified mirror current from the temperature-variable bandgap amplification mirror current to output a temperature-
Temperature-proportional-current pre-charge type time-domain temperature sensor.
A temperature fixed current source for generating a temperature fixed current irrespective of ambient temperature;
A control voltage generator for generating a temperature variable control voltage varying according to an ambient temperature by using a temperature fixed control voltage applied from the outside and the temperature fixed control voltage;
A reference temperature generator for generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the temperature fixed current and the temperature fixed control voltage;
A proportional temperature generator for generating an offset-containing proportional temperature signal including the temperature fixed offset time and the temperature proportional time using the temperature fixed current and the temperature variable control voltage;
A logic signal generator for generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the offset-included proportional temperature signal and the temperature-fixed offset signal; And
A counter for counting the offset-free logic signal in accordance with a clock signal applied from the outside
Temperature-proportional voltage pre-charge type time-domain temperature sensor.
9. The apparatus of claim 8, wherein the control voltage generator comprises:
And outputs the temperature-fixed control voltage and the temperature variable control voltage as the pre-charge voltage and the proportional temperature pre-charge voltage, respectively, while the pre-charge signal is enabled, and generates a sense voltage while the pre- Temperature proportional voltage pre-charge type time-domain temperature sensor.
10. The apparatus of claim 9, wherein the reference temperature generator comprises:
Supplying a precharge voltage corresponding to the precharge voltage to the reference temperature capacitor node by applying a power supply voltage to the reference temperature sense node while the precharge signal is being enabled, The pre-charge signal is disabled while the pre-charging signal is being supplied to the reference temperature capacitor node from the reference temperature capacitor node to the ground side to lower the potential of the reference temperature capacitor node, The reference temperature sense node and the reference temperature capacitor node are made equal to each other and the inverted signal obtained by inverting the potential level of the reference temperature sense node and the precharge signal are set to logic And outputs the temperature-fixed offset signal Live
Temperature Proportional Voltage Precharged Time Domain Temperature Sensor.
11. The apparatus of claim 10, wherein the proportional temperature generator comprises:
A switching device M1 710 which is turned on while the precharge signal is enabled to apply the power source voltage to the proportional temperature sense node;
A switching device M2 720 that is turned on to supply the precharge voltage to the proportional temperature capacitor node;
A third capacitor disposed between the proportional temperature capacitor node and the ground;
A switching device M3 (740) for passing an amplifying temperature fixing current corresponding to the temperature fixing current while the precharge signal is disabled;
An amplifying temperature fixed current source disposed between the switching device M3 (740) and the ground to flow the amplified temperature fixing current to the ground;
An inverter IN3 (760) for inverting a voltage signal applied to the proportional temperature sense node; And
A logic element for outputting the offset-included proportional temperature signal by exclusive-ORing the precharge signal and the output of the inverter
Temperature-proportional voltage pre-charge type time-domain temperature sensor.
The temperature-fixed current source according to claim 8,
A switching element for switching according to an externally applied band gap voltage;
A resistor disposed between the switching element and the ground such that a current passing through the switching element flows to the ground; And
A current mirror for mirroring the current passing through the switching element and outputting the temperature-
Temperature-proportional voltage pre-charge type time-domain temperature sensor.
13. The method of claim 12,
Wherein the resistor has a constant temperature coefficient characteristic and a negative temperature coefficient characteristic.
11. The apparatus of claim 10, wherein the control voltage generator comprises:
A switching element 1010 turned on at a gate voltage applied from the outside;
A unit amplifier 1020 for unit-amplifying the source voltage applied to the source terminal of the switching device; And
An output amplifier 1030 for amplifying the difference between the pre-charge voltage and the source voltage at a predetermined resistance ratio and outputting the temperature variable control voltage,
Temperature-proportional voltage pre-charge type time-domain temperature sensor.
14. A flash memory comprising the time-domain temperature sensor of any one of claims 1 to 14.
Generating a temperature variable current proportional to the ambient temperature and a temperature fixed current independent of the ambient temperature by using a bandgap voltage independent of a change in ambient temperature and a temperature variable bandgap current proportional to the ambient temperature;
Generating a temperature fixed offset signal corresponding to a temperature fixed offset time using the temperature fixed current;
Generating an offset-containing proportional temperature signal including the temperature-fixed offset time and the temperature-proportional time using the temperature-variable current and the temperature-fixed current;
Generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal;
Counting the offset-free logic signal according to an externally applied clock signal; And
Generating a precharge voltage while the precharge signal is enabled, and generating a sense voltage while the precharge signal is disabled
/ RTI > The method of claim 1, wherein the temperature-proportional current pre-charge type time-domain temperature detection method comprises:
Generating a variable temperature control voltage varying according to an ambient temperature by using a fixed temperature control voltage applied from the outside and the fixed temperature control voltage;
Generating a temperature fixed offset signal corresponding to a temperature fixed offset time using a temperature fixed current independent of the ambient temperature and the temperature fixed control voltage;
Generating an offset-containing proportional temperature signal including the temperature fixed offset time and the temperature proportional time using the temperature fixed current and the temperature variable control voltage;
Generating an offset-free logic signal corresponding to the temperature proportional time by logically combining the proportional temperature signal and the temperature-fixed offset signal; And
Counting the offset-free logic signal according to a clock signal applied from the outside
And a temperature-proportional voltage pre-charge type time-domain temperature detection method.
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