KR101912596B1 - 리던던트 어레이들을 통한 비휘발성 메모리 프로그램 실패 복구 - Google Patents
리던던트 어레이들을 통한 비휘발성 메모리 프로그램 실패 복구 Download PDFInfo
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- KR101912596B1 KR101912596B1 KR1020130162679A KR20130162679A KR101912596B1 KR 101912596 B1 KR101912596 B1 KR 101912596B1 KR 1020130162679 A KR1020130162679 A KR 1020130162679A KR 20130162679 A KR20130162679 A KR 20130162679A KR 101912596 B1 KR101912596 B1 KR 101912596B1
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/16—Error detection or correction of the data by redundancy in hardware
- G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
- G06F11/2053—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements where persistent mass storage functionality or persistent mass storage control functionality is redundant
- G06F11/2056—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements where persistent mass storage functionality or persistent mass storage control functionality is redundant by mirroring
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0656—Data buffering arrangements
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0683—Plurality of storage devices
- G06F3/0688—Non-volatile semiconductor memory arrays
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
- G06F11/108—Parity data distribution in semiconductor storages, e.g. in SSD
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Quality & Reliability (AREA)
- Computer Security & Cryptography (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
- Hardware Redundancy (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/728,573 US9569320B2 (en) | 2010-12-01 | 2012-12-27 | Non-volatile memory program failure recovery via redundant arrays |
| US13/728,573 | 2012-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140092750A KR20140092750A (ko) | 2014-07-24 |
| KR101912596B1 true KR101912596B1 (ko) | 2018-10-29 |
Family
ID=49726607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130162679A Expired - Fee Related KR101912596B1 (ko) | 2012-12-27 | 2013-12-24 | 리던던트 어레이들을 통한 비휘발성 메모리 프로그램 실패 복구 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9569320B2 (enExample) |
| EP (1) | EP2750018A3 (enExample) |
| JP (1) | JP6285709B2 (enExample) |
| KR (1) | KR101912596B1 (enExample) |
| CN (1) | CN103902403B (enExample) |
| TW (1) | TWI529734B (enExample) |
Families Citing this family (121)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9105305B2 (en) | 2010-12-01 | 2015-08-11 | Seagate Technology Llc | Dynamic higher-level redundancy mode management with independent silicon elements |
| US9569320B2 (en) * | 2010-12-01 | 2017-02-14 | Seagate Technology Llc | Non-volatile memory program failure recovery via redundant arrays |
| JP2014507717A (ja) | 2011-01-18 | 2014-03-27 | エルエスアイ コーポレーション | より高いレベルの冗長な情報の計算 |
| US10445229B1 (en) | 2013-01-28 | 2019-10-15 | Radian Memory Systems, Inc. | Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies |
| US9652376B2 (en) | 2013-01-28 | 2017-05-16 | Radian Memory Systems, Inc. | Cooperative flash memory control |
| US10642505B1 (en) | 2013-01-28 | 2020-05-05 | Radian Memory Systems, Inc. | Techniques for data migration based on per-data metrics and memory degradation |
| US9444889B1 (en) | 2013-02-08 | 2016-09-13 | Quantcast Corporation | Managing distributed system performance using accelerated data retrieval operations |
| US9519577B2 (en) * | 2013-09-03 | 2016-12-13 | Sandisk Technologies Llc | Method and system for migrating data between flash memory devices |
| US9442670B2 (en) * | 2013-09-03 | 2016-09-13 | Sandisk Technologies Llc | Method and system for rebalancing data stored in flash memory devices |
| US10067829B2 (en) * | 2013-12-13 | 2018-09-04 | Intel Corporation | Managing redundancy information in a non-volatile memory |
| US9262268B2 (en) * | 2013-12-20 | 2016-02-16 | Seagate Technology Llc | Method to distribute user data and error correction data over different page types by leveraging error rate variations |
| US8874835B1 (en) | 2014-01-16 | 2014-10-28 | Pure Storage, Inc. | Data placement based on data properties in a tiered storage device system |
| US9645749B2 (en) | 2014-05-30 | 2017-05-09 | Sandisk Technologies Llc | Method and system for recharacterizing the storage density of a memory device or a portion thereof |
| US8891303B1 (en) | 2014-05-30 | 2014-11-18 | Sandisk Technologies Inc. | Method and system for dynamic word line based configuration of a three-dimensional memory device |
| US9348518B2 (en) | 2014-07-02 | 2016-05-24 | International Business Machines Corporation | Buffered automated flash controller connected directly to processor memory bus |
| US9542284B2 (en) * | 2014-08-06 | 2017-01-10 | International Business Machines Corporation | Buffered automated flash controller connected directly to processor memory bus |
| US10983859B2 (en) | 2014-08-07 | 2021-04-20 | Pure Storage, Inc. | Adjustable error correction based on memory health in a storage unit |
| US9558069B2 (en) | 2014-08-07 | 2017-01-31 | Pure Storage, Inc. | Failure mapping in a storage array |
| US9766972B2 (en) | 2014-08-07 | 2017-09-19 | Pure Storage, Inc. | Masking defective bits in a storage array |
| US9082512B1 (en) * | 2014-08-07 | 2015-07-14 | Pure Storage, Inc. | Die-level monitoring in a storage cluster |
| US9691452B2 (en) | 2014-08-15 | 2017-06-27 | Micron Technology, Inc. | Apparatuses and methods for concurrently accessing different memory planes of a memory |
| US9524112B2 (en) | 2014-09-02 | 2016-12-20 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by trimming |
| US9552166B2 (en) | 2014-09-02 | 2017-01-24 | Sandisk Technologies Llc. | Process and apparatus to reduce declared capacity of a storage device by deleting data |
| US9665311B2 (en) | 2014-09-02 | 2017-05-30 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by making specific logical addresses unavailable |
| US9563370B2 (en) | 2014-09-02 | 2017-02-07 | Sandisk Technologies Llc | Triggering a process to reduce declared capacity of a storage device |
| US9582220B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Notification of trigger condition to reduce declared capacity of a storage device in a multi-storage-device storage system |
| US9524105B2 (en) | 2014-09-02 | 2016-12-20 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by altering an encoding format |
| US9652153B2 (en) | 2014-09-02 | 2017-05-16 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by reducing a count of logical addresses |
| US9519427B2 (en) | 2014-09-02 | 2016-12-13 | Sandisk Technologies Llc | Triggering, at a host system, a process to reduce declared capacity of a storage device |
| US9563362B2 (en) | 2014-09-02 | 2017-02-07 | Sandisk Technologies Llc | Host system and process to reduce declared capacity of a storage device by trimming |
| US9582212B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Notification of trigger condition to reduce declared capacity of a storage device |
| US9582193B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Triggering a process to reduce declared capacity of a storage device in a multi-storage-device storage system |
| US9582203B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by reducing a range of logical addresses |
| US9582202B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by moving data |
| US9542118B1 (en) | 2014-09-09 | 2017-01-10 | Radian Memory Systems, Inc. | Expositive flash memory control |
| US10552085B1 (en) | 2014-09-09 | 2020-02-04 | Radian Memory Systems, Inc. | Techniques for directed data migration |
| US9471448B2 (en) * | 2014-12-10 | 2016-10-18 | Intel Corporation | Performing an atomic write operation across multiple storage devices |
| US9678665B2 (en) * | 2015-03-06 | 2017-06-13 | Western Digital Technologies, Inc. | Methods and systems for memory page allocation |
| KR20160127524A (ko) | 2015-04-27 | 2016-11-04 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| CN106155812A (zh) | 2015-04-28 | 2016-11-23 | 阿里巴巴集团控股有限公司 | 一种对虚拟主机的资源管理的方法、装置、系统及电子设备 |
| US9606737B2 (en) | 2015-05-20 | 2017-03-28 | Sandisk Technologies Llc | Variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning |
| US9639282B2 (en) | 2015-05-20 | 2017-05-02 | Sandisk Technologies Llc | Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices |
| US10089196B2 (en) | 2015-07-14 | 2018-10-02 | Shannon Systems Ltd. | Methods for reconfiguring a storage controller when control logic fails and apparatuses using the same |
| CN106648439B (zh) * | 2015-07-14 | 2019-11-29 | 上海宝存信息科技有限公司 | 于控制逻辑错误时重新配置存储控制器的方法及装置 |
| US10108509B2 (en) * | 2015-07-16 | 2018-10-23 | Texas Instruments Incorporated | Dynamic enabling of redundant memory cells during operating life |
| US10552058B1 (en) | 2015-07-17 | 2020-02-04 | Radian Memory Systems, Inc. | Techniques for delegating data processing to a cooperative memory controller |
| KR102444694B1 (ko) * | 2015-08-26 | 2022-09-20 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그의 동작방법 |
| KR102385138B1 (ko) * | 2015-10-08 | 2022-04-12 | 삼성전자주식회사 | 정정 불가능한 ecc 오류를 갖는 데이터를 복구하도록 구성되는 raid 컨트롤러 장치 및 스토리지 장치 |
| US10061644B2 (en) * | 2015-11-02 | 2018-08-28 | Qualcomm Incorporated | Systems and methods for implementing error correcting code in a memory |
| US9910594B2 (en) | 2015-11-05 | 2018-03-06 | Micron Technology, Inc. | Apparatuses and methods for concurrently accessing multiple memory planes of a memory during a memory access operation |
| US9449720B1 (en) * | 2015-11-17 | 2016-09-20 | Macronix International Co., Ltd. | Dynamic redundancy repair |
| US10719236B2 (en) * | 2015-11-20 | 2020-07-21 | Arm Ltd. | Memory controller with non-volatile buffer for persistent memory operations |
| US9946473B2 (en) | 2015-12-03 | 2018-04-17 | Sandisk Technologies Llc | Efficiently managing unmapped blocks to extend life of solid state drive |
| US9946483B2 (en) | 2015-12-03 | 2018-04-17 | Sandisk Technologies Llc | Efficiently managing unmapped blocks to extend life of solid state drive with low over-provisioning |
| CN105512007B (zh) * | 2015-12-17 | 2018-12-04 | 英业达科技有限公司 | 一种pcie硬盘状态灯的控制方法及系统 |
| US9529663B1 (en) | 2015-12-20 | 2016-12-27 | Apple Inc. | Detection and localization of failures in 3D NAND flash memory |
| KR102407437B1 (ko) * | 2015-12-30 | 2022-06-10 | 삼성전자주식회사 | 불휘발성 메모리 모듈을 포함하는 메모리 시스템 및 전자 장치 |
| US10318378B2 (en) * | 2016-02-25 | 2019-06-11 | Micron Technology, Inc | Redundant array of independent NAND for a three-dimensional memory array |
| US9983820B2 (en) * | 2016-03-29 | 2018-05-29 | Nxp B.V. | Method for performing data updates |
| KR102615593B1 (ko) * | 2016-05-04 | 2023-12-21 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| US9672905B1 (en) | 2016-07-22 | 2017-06-06 | Pure Storage, Inc. | Optimize data protection layouts based on distributed flash wear leveling |
| US10282111B2 (en) * | 2016-07-29 | 2019-05-07 | Western Digital Technologies, Inc. | Adaptive wear levelling |
| US10452477B2 (en) * | 2016-08-26 | 2019-10-22 | Netapp, Inc. | Multiple node repair using high rate minimum storage regeneration erasure code |
| KR102706994B1 (ko) * | 2016-09-07 | 2024-09-19 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러, 반도체 메모리 시스템 및 그것의 동작 방법 |
| KR102611638B1 (ko) | 2016-09-27 | 2023-12-08 | 삼성전자주식회사 | 스토리지 장치의 동작 방법 및 스토리지 장치를 포함하는 데이터 저장 시스템 |
| KR102487553B1 (ko) * | 2016-12-07 | 2023-01-11 | 삼성전자주식회사 | 리페어 가능한 휘발성 메모리를 포함하는 스토리지 장치 및 상기 스토리지 장치의 동작 방법 |
| US9747158B1 (en) | 2017-01-13 | 2017-08-29 | Pure Storage, Inc. | Intelligent refresh of 3D NAND |
| US10248515B2 (en) | 2017-01-19 | 2019-04-02 | Apple Inc. | Identifying a failing group of memory cells in a multi-plane storage operation |
| US10168948B2 (en) * | 2017-02-20 | 2019-01-01 | International Business Machines Corporation | Replicating data in a data storage system |
| US10885991B2 (en) * | 2017-04-04 | 2021-01-05 | Sandisk Technologies Llc | Data rewrite during refresh window |
| US10372522B2 (en) * | 2017-04-28 | 2019-08-06 | Advanced Micro Devices, Inc. | Memory protection in highly parallel computing hardware |
| US10915405B2 (en) * | 2017-05-26 | 2021-02-09 | Netapp, Inc. | Methods for handling storage element failures to reduce storage device failure rates and devices thereof |
| US10248330B2 (en) * | 2017-05-30 | 2019-04-02 | Seagate Technology Llc | Data storage device with buffer tenure management |
| US11023164B2 (en) | 2017-06-19 | 2021-06-01 | Micron Technology, Inc. | Managed NAND data tagging |
| US10585749B2 (en) | 2017-08-10 | 2020-03-10 | Samsung Electronics Co., Ltd. | System and method for distributed erasure coding |
| US10901868B1 (en) * | 2017-10-02 | 2021-01-26 | Marvell Asia Pte, Ltd. | Systems and methods for error recovery in NAND memory operations |
| TWI636366B (zh) | 2017-11-22 | 2018-09-21 | 緯穎科技服務股份有限公司 | 資料冗餘的處理方法及其相關電腦系統 |
| CN114510435A (zh) * | 2017-11-22 | 2022-05-17 | 北京忆芯科技有限公司 | 编程命令处理方法与装置 |
| TWI661307B (zh) * | 2017-12-06 | 2019-06-01 | 慧榮科技股份有限公司 | 資料儲存裝置、主機裝置、以及資料寫入方法 |
| WO2019118356A1 (en) * | 2017-12-11 | 2019-06-20 | Fungible, Inc. | Durable block storage in data center access nodes with inline erasure coding |
| US10642602B2 (en) * | 2017-12-12 | 2020-05-05 | Nxp Usa, Inc. | NVM architecture with OTA support |
| US10658056B2 (en) * | 2017-12-22 | 2020-05-19 | Intel Corporation | Internal copy to handle NAND program fail |
| CN110058791B (zh) * | 2018-01-18 | 2022-05-10 | 伊姆西Ip控股有限责任公司 | 存储系统以及相应的方法和计算机可读介质 |
| TWI651650B (zh) * | 2018-02-05 | 2019-02-21 | 大陸商深圳大心電子科技有限公司 | 記憶體管理方法及使用所述方法的儲存控制器 |
| US11099831B2 (en) * | 2018-02-08 | 2021-08-24 | Micron Technology, Inc. | Firmware update in a storage backed memory system |
| JP6960877B2 (ja) | 2018-03-22 | 2021-11-05 | キオクシア株式会社 | メモリシステム |
| CN110413218B (zh) * | 2018-04-28 | 2023-06-23 | 伊姆西Ip控股有限责任公司 | 用于存储系统中的故障恢复的方法、装置和计算机程序产品 |
| US11048597B2 (en) * | 2018-05-14 | 2021-06-29 | Micron Technology, Inc. | Memory die remapping |
| CN108762975B (zh) * | 2018-05-24 | 2021-06-08 | 深圳市德明利技术股份有限公司 | 一种ecc数据存储方法、系统及存储介质 |
| US10762967B2 (en) | 2018-06-28 | 2020-09-01 | Apple Inc. | Recovering from failure in programming a nonvolatile memory |
| US10755787B2 (en) | 2018-06-28 | 2020-08-25 | Apple Inc. | Efficient post programming verification in a nonvolatile memory |
| US10761931B2 (en) | 2018-10-24 | 2020-09-01 | Fungible, Inc. | Inline reliability coding for storage on a network |
| US10990478B2 (en) | 2019-02-01 | 2021-04-27 | Fungible, Inc. | Flexible reliability coding for storage on a network |
| US10922178B2 (en) * | 2018-10-31 | 2021-02-16 | Hewlett Packard Enterprise Development Lp | Masterless raid for byte-addressable non-volatile memory |
| US10872039B2 (en) * | 2018-12-03 | 2020-12-22 | Micron Technology, Inc. | Managing redundancy contexts in storage devices using eviction and restoration |
| CN109799959B (zh) * | 2019-01-22 | 2020-07-10 | 华中科技大学 | 一种提高开放通道固态盘写并行性的方法 |
| US10936455B2 (en) | 2019-02-11 | 2021-03-02 | Apple Inc. | Recovery of data failing due to impairment whose severity depends on bit-significance value |
| CN113424262B (zh) * | 2019-03-21 | 2024-01-02 | 华为技术有限公司 | 一种存储校验方法及装置 |
| CN111949440A (zh) * | 2019-05-17 | 2020-11-17 | 深圳市茁壮网络股份有限公司 | 数据恢复方法及装置 |
| US11269552B2 (en) | 2019-06-14 | 2022-03-08 | Micron Technology, Inc. | Multi-pass data programming in a memory sub-system having multiple dies and planes |
| TWI779209B (zh) * | 2019-06-28 | 2022-10-01 | 華邦電子股份有限公司 | 具有動態資料修復機制的記憶體存放裝置及其動態資料修復的方法 |
| KR102650809B1 (ko) | 2019-08-02 | 2024-03-26 | 삼성전자주식회사 | 스토리지 장치 및 그것의 동작 방법 |
| US10915394B1 (en) | 2019-09-22 | 2021-02-09 | Apple Inc. | Schemes for protecting data in NVM device using small storage footprint |
| CN111186139B (zh) * | 2019-12-25 | 2022-03-15 | 西北工业大学 | 一种3d打印模型的多层次并行切片方法 |
| US11321173B2 (en) * | 2019-12-31 | 2022-05-03 | Micron Technology, Inc. | Managing storage of multiple plane parity data in a memory sub-system |
| US11221949B2 (en) * | 2020-02-10 | 2022-01-11 | Micron Technology, Inc. | Multi state purgatory for media management for a memory subsystem |
| US11630729B2 (en) | 2020-04-27 | 2023-04-18 | Fungible, Inc. | Reliability coding with reduced network traffic |
| CN111639008B (zh) * | 2020-05-29 | 2023-08-25 | 杭州海康威视系统技术有限公司 | 基于双端口ssd的文件系统状态监测方法、装置及电子设备 |
| KR20220120967A (ko) | 2021-02-24 | 2022-08-31 | 삼성전자주식회사 | 스토리지 컨트롤러, 그 동작방법 |
| US11650881B2 (en) * | 2021-03-19 | 2023-05-16 | Micron Technology, Inc. | Managing storage reduction and reuse in the presence of storage device failures |
| US20230015697A1 (en) * | 2021-07-13 | 2023-01-19 | Citrix Systems, Inc. | Application programming interface (api) authorization |
| KR20230022060A (ko) | 2021-08-06 | 2023-02-14 | 삼성전자주식회사 | 설정 데이터를 저장하는 메모리 장치 및 그 동작방법 |
| CN113687976B (zh) * | 2021-08-27 | 2022-04-12 | 中国人民解放军军事科学院军事医学研究院 | 面向dna信息存储的编码和解码方法与装置 |
| US11550657B1 (en) | 2021-09-01 | 2023-01-10 | Apple Inc. | Efficient programming schemes in a nonvolatile memory |
| TWI821965B (zh) * | 2021-09-29 | 2023-11-11 | 慧榮科技股份有限公司 | 編碼歷程資訊的存取方法及電腦程式產品及裝置 |
| CN114281265B (zh) * | 2021-12-28 | 2023-08-15 | 深圳大普微电子科技有限公司 | 一种存储介质失效的处理方法、装置和固态硬盘 |
| CN114780370B (zh) * | 2022-05-10 | 2025-02-14 | 中国平安财产保险股份有限公司 | 基于日志的数据修正方法、装置、电子设备及存储介质 |
| US11934270B2 (en) * | 2022-06-02 | 2024-03-19 | Micron Technology, Inc. | Write command execution for data protection and recovery schemes |
| CN114911631B (zh) * | 2022-07-18 | 2022-10-21 | 深圳市泛联信息科技有限公司 | 基于持久内存技术的全局资源管理方法及系统 |
| TWI819876B (zh) * | 2022-11-02 | 2023-10-21 | 群聯電子股份有限公司 | 資料儲存方法、記憶體儲存裝置及記憶體控制電路單元 |
| CN117608500B (zh) * | 2024-01-23 | 2024-03-29 | 四川省华存智谷科技有限责任公司 | 一种存储系统在数据冗余不足时抢救有效数据的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050223135A1 (en) * | 2004-04-02 | 2005-10-06 | Matsushita Electric Industrial Co., Ltd. | Data transfer processing device and data transfer processing method |
| US20090164704A1 (en) * | 2007-12-21 | 2009-06-25 | Spansion Llc | High performance flash channel interface |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19544571A1 (de) * | 1995-11-30 | 1997-06-05 | Sel Alcatel Ag | Verfahren und Vorrichtung zum Programmieren eines Flash-EEProms |
| JP4499193B2 (ja) * | 1997-04-07 | 2010-07-07 | ソニー株式会社 | 記録再生装置及び記録再生方法 |
| US6910155B2 (en) * | 2001-06-25 | 2005-06-21 | Hewlett-Packard Development Company, L.P. | System and method for chip testing |
| TW200302966A (en) | 2002-01-29 | 2003-08-16 | Matsushita Electric Industrial Co Ltd | Memory device, data processing method and data processing program |
| US8291295B2 (en) | 2005-09-26 | 2012-10-16 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
| KR101431296B1 (ko) * | 2007-01-11 | 2014-08-20 | 레드 밴드 리미티드 | 저장 장치에 저장된 컨텐츠의 인-플레이스 업데이트 방법 및 시스템 |
| US7836226B2 (en) | 2007-12-06 | 2010-11-16 | Fusion-Io, Inc. | Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment |
| KR101246833B1 (ko) | 2007-12-20 | 2013-03-28 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템, 및 이의 구동 방법 |
| US20110099556A1 (en) * | 2009-10-22 | 2011-04-28 | International Business Machines Corporation | Updating system for a microcontroller and associated methods |
| US9569320B2 (en) | 2010-12-01 | 2017-02-14 | Seagate Technology Llc | Non-volatile memory program failure recovery via redundant arrays |
| JP2014507717A (ja) * | 2011-01-18 | 2014-03-27 | エルエスアイ コーポレーション | より高いレベルの冗長な情報の計算 |
| US8924627B2 (en) | 2011-03-28 | 2014-12-30 | Western Digital Technologies, Inc. | Flash memory device comprising host interface for processing a multi-command descriptor block in order to exploit concurrency |
| KR20130040486A (ko) * | 2011-10-14 | 2013-04-24 | 삼성전자주식회사 | 저장 장치 및 그것을 이용하는 사용자 장치 |
| JP2013131095A (ja) * | 2011-12-22 | 2013-07-04 | Toshiba Corp | メモリコントローラ、記憶装置およびメモリ制御方法 |
-
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- 2012-12-27 US US13/728,573 patent/US9569320B2/en active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050223135A1 (en) * | 2004-04-02 | 2005-10-06 | Matsushita Electric Industrial Co., Ltd. | Data transfer processing device and data transfer processing method |
| US20090164704A1 (en) * | 2007-12-21 | 2009-06-25 | Spansion Llc | High performance flash channel interface |
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|---|---|
| TWI529734B (zh) | 2016-04-11 |
| JP6285709B2 (ja) | 2018-02-28 |
| KR20140092750A (ko) | 2014-07-24 |
| CN103902403B (zh) | 2017-05-03 |
| CN103902403A (zh) | 2014-07-02 |
| JP2014130587A (ja) | 2014-07-10 |
| EP2750018A3 (en) | 2015-05-20 |
| US20200019463A1 (en) | 2020-01-16 |
| EP2750018A2 (en) | 2014-07-02 |
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| US9569320B2 (en) | 2017-02-14 |
| US10467093B2 (en) | 2019-11-05 |
| TW201432702A (zh) | 2014-08-16 |
| US20170147435A1 (en) | 2017-05-25 |
| US11144389B2 (en) | 2021-10-12 |
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