KR101911844B1 - Solar cell module - Google Patents

Abstract

The present invention relates to a solar cell module.
A semiconductor substrate; A plurality of solar cells each having a first electrode and a second electrode, each of the first electrode and the second electrode having a different polarity; And a plurality of first and second electrodes connected to the first and second electrodes through a conductive adhesive, the first and second electrodes being electrically connected to the insulating layer, Wherein a length of each of the conductive adhesive and the insulating layer in a first direction is equal to or greater than a line width of each of the conductive wires and is narrower than an interval between the conductive wires, And the length is larger than the length of the conductive adhesive in the first direction.

Description

Solar cell module {SOLAR CELL MODULE}

The present invention relates to a solar cell module.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

Typical solar cells have a semiconductor portion that forms a p-n junction by different conductive types, such as p-type and n-type, and electrodes connected to semiconductor portions of different conductivity types, respectively.

When light is incident on such a solar cell, a plurality of electron-hole pairs are generated in the semiconductor portion, and the generated electron-hole pairs are separated into electrons and holes, respectively, so that the electrons move toward the n- Type semiconductor portion. The transferred electrons and holes are collected by different electrodes connected to the n-type semiconductor portion and the p-type semiconductor portion, respectively, and electric power is obtained by connecting these electrodes with electric wires.

A plurality of such solar cells may be formed as modules by being connected to each other by inter connecters.

An object of the present invention is to provide a solar cell module.

An example of a solar cell module according to the present invention includes a semiconductor substrate; A plurality of solar cells each having a first electrode and a second electrode, each of the first electrode and the second electrode having a different polarity; And a plurality of first and second electrodes connected to the first and second electrodes through a conductive adhesive, the first and second electrodes being electrically connected to the insulating layer, Wherein a length of each of the conductive adhesive and the insulating layer in a first direction is equal to or greater than a line width of each of the conductive wires and is narrower than an interval between the conductive wires, And the length is larger than the length of the conductive adhesive in the first direction.

For example, the ratio of the length of the insulating layer in the first direction to the width of the conductive wires may be between 1: 1.1 and 2.

In addition, the length of the conductive adhesive in the first direction with respect to the line width of the conductive wiring may be between 1: 1 and 1.25.

Further, the line width of the conductive wirings may be 1 mm or more and 2.5 mm or less, the distance between the conductive wirings may be 2 mm or more and 0.5 times or less the second direction length of the semiconductor substrate, more preferably, 8 mm or less.

The ratio of the length of the insulating layer in the first direction to the length of the conductive adhesive in the first direction may be between 1: 1.1 and 1.7.

For example, the length of the conductive adhesive in the first direction may be between 1 mm and 3 mm, and the length of the insulating layer in the first direction may be between 1.1 mm and 4 mm.

The line width of each of the first and second electrodes may be narrower than the first direction length of the conductive adhesive and the insulating layer. For example, the line width of each of the first and second electrodes may be between 180um and 400um.

In addition, the gap between the first electrode and the second electrode may be narrower than the first direction length of the conductive adhesive and the insulating layer. For example, the distance between the first electrode and the second electrode may be between 0.5 mm and 1.5 mm.

The line width of the insulating layer may be larger than the line width of the conductive adhesive. For example, the line width of the conductive adhesive may be equal to the line width of each of the first and second electrodes.

More specifically, the line width of the conductive adhesive may be between 180 袖 m and 400 袖 m, and the line width of the insulating layer may be between 200 袖 m and 450 袖 m.

Here, the semiconductor substrate of each solar cell is doped with an impurity of the first conductivity type, and the rear surface of the semiconductor substrate is doped with a second conductive impurity opposite to the first conductivity; And a backside electrical portion that heavily dopes impurities of the first conductivity type than the semiconductor substrate, wherein each of the first electrodes is connected to the emitter portion, and each of the second electrodes is connected to the backside electrical portion.

Here, the conductive wirings are connected to the first electrodes through a conductive adhesive agent, and are connected to the first wirings and the second electrodes insulated by the insulating layer with the second electrodes through the conductive adhesive agent, And second wires that are insulated from the electrodes by an insulating layer.

In addition, the solar cells include a first solar cell and a second solar cell arranged immediately adjacent to each other in a second direction intersecting with the first direction and connected to each other in series, and between the first solar cell and the second solar cell The solar cell module may further include an interconnector for serially connecting the first and second solar cells to each other.

Here, the interconnector is disposed in a first direction between the first solar cell and the second solar cell, and the interconnector includes first conductive interconnects connected to the first solar cell and second interconnections connected to the second solar cell, The wirings can be connected in common.

In the solar cell module according to an example of the present invention, the length of the insulating layer in the first direction is greater than the length in the first direction of the conductive adhesive, so that the conductive wiring can be more effectively prevented from shorting to an unwanted electrode.

FIG. 1 is an example of a shape of a string applied to a solar cell module according to the present invention as viewed from the rear side.
2 is a partial perspective view showing an example of a solar cell applied to FIG.
3 is a cross-sectional view of the solar cell shown in Fig. 2 in the second direction (y).
FIG. 4 is a cross-sectional view taken along line CSx1-CSx1 in FIG.
5 illustrates the length L251 in the first direction x and the length L252 in the first direction x of the insulating layer 252 of the conductive adhesive 251 described in Figs. 1 and 4 Respectively.
6 is a view for explaining another example of the solar cell module according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

In the drawings, the thicknesses are enlarged to clearly indicate layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. Further, when a certain portion is formed as "whole" on another portion, it means not only that it is formed on the entire surface of the other portion but also that it is not formed on the edge portion.

Hereinafter, the front surface may be a surface of the semiconductor substrate 110 on which the direct light is incident, and the rear surface may be an opposite surface of the semiconductor substrate 110 on which the direct light is not incident, have.

FIGS. 1 to 4 are views for explaining an example of a solar cell module according to the present invention, and FIG. 6 is a view for explaining another example of a solar cell module according to the present invention.

Here, FIG. 1 is an example of a shape of a string applied to a solar cell module according to the present invention as viewed from the rear side.

1, a solar cell module according to the present invention includes a plurality of solar cells C1 and C2, a plurality of first and second electrodes 141 and 142 formed on the rear surface of a plurality of solar cells C1 and C2, And a plurality of solar cells C1 and C2 connected to the plurality of first and second conductive wirings 210 and 220. The plurality of first conductive wirings 210 and the plurality of second conductive wirings 220 are connected to the first and second conductive wirings 210 and 220, And an inter connect connector 300 for series connection.

Each of the plurality of solar cells C1 and C2 includes a plurality of first electrodes 141 spaced apart from each other at least on the rear surface of the semiconductor substrate 110 and the semiconductor substrate 110 and extending in a first direction x, And a plurality of second electrodes 142.

The plurality of conductive wirings 200 may include a plurality of first electrodes 141 provided in any one of two solar cells adjacent to each other among a plurality of solar cells, The two electrodes 142 may be electrically connected to each other in series through the interconnector 300. [

The plurality of conductive wirings 200 are elongated in a second direction y intersecting with the first direction x that is the longitudinal direction of the first and second electrodes 141 and 142 and connected to each of the plurality of solar cells .

For example, the plurality of conductive wirings 200 may include the first conductive wirings 210 and the second conductive wirings 220.

More specifically, as shown in FIG. 1, the first conductive wiring 210 is connected to the first electrode 141 provided in each solar cell through a conductive adhesive 251, and an insulating layer 252 made of an insulating material The second electrode 142 may be insulated from the second electrode 142. [

The second conductive wiring 220 is connected to the second electrode 142 provided in each solar cell via the conductive adhesive 251 and is electrically connected to the first electrode 141 and the second electrode 142 by an insulating layer 252 made of an insulating material. Can be insulated.

Each of the first and second conductive wirings 210 and 220 may be connected to an interconnector 300 extending long in a first direction x between a plurality of solar cells. Accordingly, the plurality of solar cells can be connected in series with each other in the second direction (y).

The solar cell module according to the present invention minimizes the short circuit between the undesired electrode 141 OR 142 and the conductive wiring 200 when the conductive wiring 200 is connected to the rear surface of the semiconductor substrate 110 during the manufacturing process The length L252 of the insulating layer 252 in the first direction x may be greater than the length L251 of the conductive adhesive 251 in the first direction x. This will be described in more detail in Fig.

Although the solar cell module according to the exemplary embodiment of the present invention includes the interconnector 300 as an example, the interconnector 300 may be omitted as shown in FIG. 6 When the interconnector 300 is omitted, the first conductive interconnections 210 and the second conductive interconnections 220 are formed on one conductive interconnection line 200, The first electrode 141 and the second electrode 142 of the second solar cell C2 are connected by the conductive adhesive 251 so that the plurality of solar cells C1 and C2 can be connected in series.

Here, each of the plurality of solar cells will be described in more detail as follows.

FIG. 2 is a partial perspective view showing an example of a solar cell applied to FIG. 1, and FIG. 3 is a sectional view of the solar cell shown in FIG. 2 in a second direction (y).

2 and 3, an example of a solar cell according to the present invention includes an antireflection film 130, a semiconductor substrate 110, a tunnel layer 180, an emitter section 121, a rear electric section 172, a passivation layer 190, a first electrode 141, and a second electrode 142. The first electrode 141 and the second electrode 142 are formed on the first semiconductor layer 120 and the second semiconductor layer 120, respectively.

Here, the antireflection film 130, the intrinsic semiconductor layer 150, the tunnel layer 180, and the passivation layer 190 may be omitted. However, since the efficiency of the solar cell is improved when provided, As an example.

The semiconductor substrate 110 may be formed of at least one of monocrystalline silicon and polycrystalline silicon containing an impurity of the first conductivity type. In one example, the semiconductor substrate 110 may be formed of a single crystal silicon wafer.

Here, the first conductivity type may be any one of n-type and p-type conductivity types.

When the semiconductor substrate 110 has a p-type conductivity type, impurity of a trivalent element such as boron (B), gallium, indium, or the like is doped in the semiconductor substrate 110. However, when the semiconductor substrate 110 has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb) may be doped into the semiconductor substrate 110.

Hereinafter, a case where the first conductive type of the semiconductor substrate 110 is n-type will be described as an example.

The semiconductor substrate 110 may have a plurality of uneven surfaces on the entire surface thereof. Accordingly, the emitter section 121 located on the front surface of the semiconductor substrate 110 may also have an uneven surface.

Accordingly, the amount of light reflected from the front surface of the semiconductor substrate 110 decreases, and the amount of light incident into the semiconductor substrate 110 increases.

The antireflection film 130 is formed on the front surface of the semiconductor substrate 110 to minimize the reflection of light incident from the outside to the front surface of the semiconductor substrate 110. The antireflection film 130 is formed of an aluminum oxide film (AlOx), a silicon nitride film (SiNx) An oxide film (SiOx), and a silicon oxynitride film (SiOxNy).

The tunnel layer 180 is disposed in direct contact with the entire rear surface of the semiconductor substrate 110, and may include a dielectric material. Therefore, the tunnel layer 180 can pass carriers generated in the semiconductor substrate 110, as shown in FIGS.

The tunnel layer 180 may pass carriers generated in the semiconductor substrate 110 and passivate the back surface of the semiconductor substrate 110.

In addition, the tunnel layer 180 may be formed of a dielectric material formed of SiCx or SiOx having high durability even at a high temperature process of 600 DEG C or more. However, the tunnel layer 180 may be formed of s252icon nitride (SiNx), hydrogenerated SiNx, aluminum oxide (AlOx), s252icon oxynitride (SiON), or hydrogenerated SiON. The thickness T180 of the tunnel layer 180 may be 0.5 nm to 2.5 nm As shown in FIG.

The emitter layer 121 is disposed on the rear surface of the semiconductor substrate 110. For example, a plurality of the emitter layers 121 are arranged in a first direction (x) so as to be in direct contact with a part of the rear surface of the tunnel layer 180, Type emitter layer 121 may be formed of a polycrystalline silicon material having a second conductivity type opposite to that of the emitter layer 121. The emitter layer 121 may form a pn junction with the semiconductor substrate 110 via the tunnel layer 180. [

Since each emitter section 121 forms a p-n junction with the semiconductor substrate 110, the emitter section 121 can have a p-type conductivity type. However, unlike the example of the present invention, when the semiconductor substrate 110 has the p-type conductivity type, the emitter portion 121 has the n-type conductivity type. In this case, the separated electrons move toward the plurality of emitter portions 121 and the separated holes can move toward the plurality of rear electric fields 172.

When the plurality of emitter sections 121 have a p-type conductivity type, the emitter section 121 can be doped with an impurity of a trivalent element. Conversely, when the plurality of emitter sections 121 have an n-type conductivity type , The emitter portion 121 may be doped with an impurity of a pentavalent element.

The rear electric field portion 172 is disposed on the rear surface of the semiconductor substrate 110 and is in direct contact with a part of the rear surface of the tunnel layer 180 which is spaced apart from each of the plurality of emitter portions 121, May be formed to be long in a first direction (x) side by side with the emitter part (121).

The rear electric field portion 172 may be formed of a polycrystalline silicon material doped with impurities of the first conductivity type at a higher concentration than the semiconductor substrate 110. Thus, for example, when the substrate is doped with an n-type impurity, the plurality of backside electrical paths 172 may be n + impurity regions.

The rear electric field 172 disturbs the hole movement toward the rear electric field 172, which is the movement direction of the electrons, due to the potential barrier due to the difference in impurity concentration between the semiconductor substrate 110 and the rear electric field 172, (E. G., Electrons) to the backside electrical < / RTI >

Thus, the amount of charge lost by recombination of electrons and holes in the rear electric field 172 and in the vicinity thereof or at the first and second electrodes 141 and 142 is reduced and the electron movement is accelerated to the rear electric field 172 The electron transfer amount can be increased.

2 and 3, the case where the emitter portion and the rear electric field portion are formed of a polycrystalline silicon material on the rear surface of the tunnel layer has been described as an example. Alternatively, when the tunnel layer is omitted, 110 may be diffused and doped. In this case, the emitter portion and the rear surface electric portion may be formed of the same single-crystal silicon material as the semiconductor substrate 110.

The intrinsic semiconductor layer 150 may be formed on the back surface of the tunnel layer exposed between the emitter portion and the rear electric portion and the intrinsic semiconductor layer 150 may be formed on the back surface of the tunnel layer, The impurity of the first conductivity type or the impurity of the second conductivity type may be formed of an intrinsic polycrystalline silicon layer not doped.

2 and 3, each of the opposite side surfaces of the intrinsic semiconductor layer 150 may have a structure in which the side surfaces of the emitter layer 121 and the side surfaces of the rear electric section 172 are in direct contact with each other.

The passivation layer 190 is formed by removing a defect caused by a dangling bond formed on the rear surface of the polycrystalline silicon layer formed on the rear electric field portion 172, the intrinsic semiconductor layer 150, and the emitter portion 121 , And to prevent the carriers generated from the semiconductor substrate 110 from being recombined by a dangling bond and disappearing.

For this, the passivation layer 190 may be formed to cover the remaining portion of the rear surface of the semiconductor substrate 110 except for the portion where the first and second electrodes 141 and 142 are formed.

The passivation layer 190 may be formed of a dielectric layer. For example, the passivation layer 190 may include a hydrogenated silicon nitride film (SiNx: H), a hydrogenated silicon oxide film (SiOx: H), a hydrogenated silicon nitride oxide film (SiNxOy: , A hydrogenated amorphous silicon film (a-Si: H), and a silicon oxide nitride film (SiOxNy: H)

The first electrode 141 is connected to the emitter section and may be formed to extend in the first direction (x). The first electrode 141 may collect carriers, for example, holes, which have migrated toward the emitter section 121.

The second electrode 142 may be formed to extend in the first direction x in parallel with the first electrode 141, connected to the rear electric field portion. As such, the second electrode 142 may collect carriers, e.g., electrons, that have migrated toward the rear electric section 172.

1, each of the first and second electrodes 141 and 142 may be extended in a first direction x, and the first electrode 141 and the second electrode 142 may be formed to extend in the first direction x, May be alternately arranged in the second direction (y).

 The plurality of first and second electrodes 141 and 142 may be formed of a metal material different from the conductive wiring 200 and the conductive adhesive 251. For example, each of the first and second electrodes 141 and 142 may be formed of one selected from the group consisting of Ti, Ag, Al, NiV, Ni, Ni- At least one material of denium (Mo) and tin (Sn) may be formed of at least one layer.

The first and second electrodes 141 and 142 may be formed using any one of a sputtering method, an electron beam evaporator (Electron Beam Evaporator), and an electroless / electrolytic plating method.

The holes collected through the first electrode 141 and the electrons collected through the second electrode 142 in the solar cell according to the present invention are used as electric power of the external device through the external circuit device .

The solar cell applied to the solar cell module according to the present invention is not necessarily limited to only FIGS. 2 and 3, and the first and second electrodes 141 and 142 provided on the solar cell are formed only on the rear surface of the semiconductor substrate 110 Other components can be changed at any time.

For example, in the solar cell module of the present invention, a part of the first electrode 141 and the emitter part 121 are located on the front surface of the semiconductor substrate 110, and a part of the first electrode 141 is formed on the semiconductor substrate 110 The MWT type solar cell connected to the remaining part of the first electrode 141 formed on the rear surface of the semiconductor substrate 110 through the formed hole is also applicable.

The cross-sectional structure in which the solar cell is connected in series using the conductive wiring 200 and the interconnector 300 as shown in FIG. 1 is as shown in FIG.

FIG. 4 is a cross-sectional view taken along line CSx1-CSx1 in FIG.

As shown in FIG. 4, a plurality of solar cells including the first solar cell C1 and the second solar cell C2 may be arranged in the second direction (y).

At this time, the longitudinal direction of the first and second electrodes 141 and 142 provided in the first and second solar cells C1 and C2 may be oriented in the first direction x.

The first and second solar cells C1 and C2 are connected to the first and second conductive wirings 210 and 220 while the first and second solar cells C1 and C2 are arranged in the second direction y. And one interconnected string can be formed by the interconnector 300 and extending in the second direction y.

The first and second conductive wirings 210 and 220 and the interconnector 300 are formed of a conductive metal and the first and second conductive wirings 210 and 220 are formed on the rear surface of the semiconductor substrate 110 of each solar cell And the first and second conductive wirings 210 and 220 connected to the respective semiconductor substrates 110 for the series connection of the solar cells may be connected to the interconnector 300.

In addition, the plurality of first and second conductive wirings 210 and 220 may have a conductive wire shape having a circular section or a ribbon shape having a width larger than the thickness.

More specifically, the plurality of first conductive wirings 210 are connected to the plurality of first electrodes 141 provided in each of the plurality of solar cells C1 and C2 via the conductive adhesive 251, And may be insulated from the plurality of second electrodes 142 by the insulating layer 252.

1 and 4, each of the plurality of first conductive wirings 210 protrudes out of the semiconductor substrate 110 on the side of the interconnector 300 disposed between the first and second solar cells .

The plurality of second conductive wirings 220 are connected to the plurality of second electrodes 142 provided in each of the plurality of solar cells C1 and C2 through the conductive adhesive 251, And may be insulated from the plurality of first electrodes 141 by the layer 252.

1 and 4, each of the plurality of second conductive wirings 220 protrudes outside the semiconductor substrate 110 on the side of the interconnector 300 disposed between the first and second solar cells .

Here, the conductive adhesive 251 may be formed of a metal material including an alloy containing tin (Sn) or tin (Sn). The conductive adhesive 251 may be a solder paste including an alloy containing tin (Sn) or tin (Sn), an alloy containing tin (Sn) or tin (Sn) May be formed in the form of either an epoxy solder paste or a conductive paste.

For example, when the conductive adhesive 251 is applied in the form of a solder paste, the solder paste may include at least one of Sn, SnBi, SnIn, SnAgCu, SnPb, SnBiCuCo, SnBiAg, SnPbAg, or SnAg SnBi, SnIn, SnAgCu, SnPb, SnBiCuCo, SnBiAg, SnPbAg, or SnAg in the epoxy resin when the conductive adhesive 251 is applied in the form of an epoxy solder paste .

When the conductive adhesive 251 is applied in the form of a conductive paste, the conductive adhesive 251 may be formed of a metal such as Sn, SnBi, Ag, AgIn or AgCu in a resin such as epoxy.

Here, the insulating layer 252 may be any insulating material. For example, an insulating material such as epoxy resin, polyimide, polyethylene, acryl-based resin, or silicone-based resin may be used.

Here, as shown in the enlarged view of FIG. 1, the conductive adhesive 251 may be positioned only on the rear surface of the first electrode or the second electrode located at a portion intersecting the conductive wiring 200, The layer 252 may be located on the rear surface of the first electrode or the second electrode located at the portion intersecting the conductive wiring 200 as well as on the rear surface of the surrounding semiconductor substrate 110. [

By forming the conductive adhesive agent 251 and the insulating layer 252 at such a position, a short circuit between an unwanted electrode and the conductive wiring 200 can be more effectively prevented.

As described above, a portion of the plurality of first conductive wirings 210 and the plurality of second conductive wirings 220, which are connected to the rear surface of each solar cell, protruding out of each semiconductor substrate 110 is shown in Figs. 1 and 4 The plurality of solar cells C1 and C2 can be connected in common to the rear surface of the interconnector 300 disposed between the first and second solar cells C1 and C2, lt; RTI ID = 0.0 > (y). < / RTI >

In a solar cell module having such a structure, when there is a solar cell in which a connection failure occurs between the first and second conductive wirings 210 and 220 and the first and second electrodes 141 and 142 among a plurality of solar cells, The connection between the solar cell 300 and the plurality of first and second conductive wirings 210 and 220 is released so that the solar cell can be replaced more easily.

The length L251 of the conductive adhesive agent 251 in the first direction x and the length L252 of the insulating layer 252 in the first direction x will be described in more detail below.

5 illustrates the length L251 in the first direction x and the length L252 in the first direction x of the insulating layer 252 of the conductive adhesive 251 described in Figs. 1 and 4 And an enlarged portion of the conductive wiring 200 adhered to the rear surface of the semiconductor substrate 110 is shown.

In FIG. 5, the description of the contents overlapping with those described above will be omitted. In addition, in FIG. 5, the solar cell module described with reference to FIGS. 1 and 4 will be described as an example, but the same can be applied to another example of the solar cell module as shown in FIG.

5, the first directional lengths L251 and L252 of the conductive adhesive 251 and the insulating layer 252 are not less than the line width W200 of each of the conductive interconnections 200, 200, as shown in FIG.

5, the length L251 of the conductive adhesive agent 251 in the first direction x overlaps the conductive wiring line 200, and the length L251 of the conductive adhesive agent 251 in the first direction (x) x and the length L252 in the first direction x in the insulating layer 252 corresponds to the maximum length of the conductive wiring 200 in the first direction x. Refers to the maximum length of both ends of the insulating layer 252 protruding in the first direction x about the conductive wiring 200 in the first direction x.

The first direction length L251 of the conductive adhesive agent 251 and the first direction length L252 of the insulating layer 252 may be equal to or larger than the line width W200 of the conductive wiring line 200, And may be narrower than the distance D200 between the wirings 200. [

The length L252 of the insulating layer 252 in the first direction may be greater than the length L251 of the conductive adhesive 251 in the first direction. The lengths L251 and L252 in the first direction x of each of the conductive adhesive agent 251 and the insulating layer 252 are formed to be equal to or larger than the line width W200 of each of the conductive interconnections 200, The conductive wiring 200 is sufficiently connected to the conductive adhesive 251 during the tableting process for connecting the conductive wiring 200 to the back surface of the semiconductor substrate 110, So that the contact resistance is formed sufficiently low.

The length L251 of the conductive adhesive agent 251 in the first direction is made larger than the length L252 of the insulating layer 252 in the first direction as described above, The shorting between the electrode 141 or 142 and the conductive wiring 200 is minimized.

That is, when the first direction length L251 of the conductive adhesive agent 251 is equal to or larger than the first direction length L252 of the insulating layer 252, the conductive adhesive agent 251 spreads to adjacent electrodes of other polarity The electrode 141 or 142 and the conductive wiring 200 may be short-circuited because the length L252 of the insulating layer 252 in the first direction is smaller than that of the conductive adhesive 251 Of the conductive adhesive agent 251 is larger than the first directional length L251 of the conductive adhesive agent 251 in the second direction, it is possible to prevent the possibility that the conductive adhesive agent 251 is connected to the adjacent electrodes of different polarities in advance. Accordingly, the possibility of failure of the solar cell module can be minimized.

More specifically, the length L252 of the insulating layer 252 in the first direction is larger than the line width W200 of the conductive lines 200 and smaller than the distance D200 between the conductive lines 200, The ratio of the first direction length L252 of the insulating layer 252 to the line width W200 of the conductive wirings 200 may be between 1: 1.1 and 2.

As described above, the length L252 of the insulating layer 252 in the first direction is set to be larger than the line width W200 of the conductive wirings 200, but is set to 1: 1.1 or more, so that some of the conductive wirings 200 are somewhat It is possible to ensure a process margin so as to appropriately prevent a short circuit between the conductive wirings 200 and the undesired electrode and to prevent the excessive use of the insulating layer 252 by setting the ratio to 1: So that the manufacturing cost can be reduced.

For example, the line width W200 of the conductive wirings 200 may be 1 mm or more and 2.5 mm or less, and the distance D200 between the conductive wirings 200 may be 0.5 mm or more Fold or less. More preferably, the distance D200 between the conductive wirings 200 may be 4 mm or more and 8 mm or less.

The length L252 of the insulating layer 252 in the first direction is greater than or equal to the line width W200 of the conductive lines 200 and less than the distance D200 between the conductive lines 200, In consideration of the above-mentioned process margin, short-circuit prevention, and manufacturing cost, it may preferably be formed to be between 1.1 mm and 4 mm.

The length L251 of the conductive adhesive agent 251 in the first direction is equal to or larger than the line width W200 of the conductive lines 200 and smaller than the length L252 of the insulating layer 252 in the first direction .

For example, the length L251 of the conductive adhesive 251 in the first direction to the line width W200 of the conductive lines 200 may be between 1: 1 and 1.25.

As described above, by making the length L251 of the conductive adhesive agent 251 in the first direction equal to or greater than 1: 1 with respect to the line width W200 of the conductive lines 200, the conductive line 200 is electrically connected to the conductive adhesive agent 251 The contact resistance between the conductive wiring 200 and the corresponding electrode can be sufficiently low and can be set to 1: 1.25 or less so that the use of the conductive adhesive 251 can be minimized The cost can be reduced.

The length L251 of the conductive adhesive 251 in the first direction is set to be greater than or equal to the line width W200 of the conductive interconnections 200 and smaller than the length L252 of the insulating layer 252 in the first direction In consideration of the above-mentioned contact resistance and manufacturing cost, it may preferably be formed to be between 1 mm and 3 mm.

The ratio of the first direction length L252 of the insulating layer 252 to the first direction length L251 of the conductive adhesive agent 251 may be between 1: 1.1 and 1.7. Here, it is preferable that the insulating layer 252 is used in an excessively large amount in excess of 1: 1.1 so that the undesired electrode and the conductive wiring 200 can be prevented from short-circuiting, It is possible to secure an appropriate process margin in the tabletting process.

At this time, the line widths W141 and W142 of the first and second electrodes 141 and 142 are narrower than the first directional length L252 of the conductive adhesive 251 and the insulating layer 252. For example, And the line widths W141 and W142 of the first and second electrodes 141 and 142 may be between 180um and 400um.

The distance DE between the first electrode 141 and the second electrode 142 may be narrower than the length L252 of the conductive adhesive 251 and the insulating layer 252 in the first direction. For example, the distance DE between the first electrode 141 and the second electrode 142 may be between 0.5 mm and 1.5 mm.

The line width W251 of the conductive adhesive agent 251 is narrower than the first directional length L251 of the conductive adhesive agent 251 and the line width W252 of the insulating layer 252 is smaller than the line width W252 of the insulating adhesive layer 252 in the first direction length (L252).

More specifically, the line width W252 of the insulating layer 252 may be formed to be larger than the line width W251 of the conductive adhesive 251 in consideration of short-circuit prevention. For example, the line width W252 of the insulating layer 252 may be between 200um and 450um, and the line width W251 of the conductive adhesive 251 may be between 180um and 400um.

The line width W251 of the conductive adhesive 251 may be substantially equal to the line widths W141 and W142 of the first and second electrodes 141 and 142, respectively.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

Claims (7)

A semiconductor substrate; Solar cells each having first and second electrodes having different polarities and extending in a first direction on a rear surface of the semiconductor substrate; And
A plurality of first conductive wirings extending in a second direction intersecting the first electrodes of each solar cell and connected to the first electrodes;
A plurality of second conductive wirings extending in a second direction intersecting the second electrodes of each solar cell and connected to the second electrodes;
A conductive adhesive formed at an intersection between the first conductive wires and the first electrodes and an intersection between the second conductive wires and the second electrodes; And
And an insulating layer formed at an intersection between the first conductive wirings and the second electrodes and at an intersection between the second conductive wirings and the first electrodes,
Wherein the plurality of first conductive wirings connected to the first electrodes of the first solar cell among the solar cells are connected to the second electrodes of the second solar cell located adjacent to one side of the first solar cell, And connected via a conductive adhesive,
The plurality of second conductive wirings connected to the second electrodes of the first solar cell are connected to the first electrodes of the third solar cell located adjacent to the other side of the first solar cell through the conductive adhesive Respectively,
Wherein a line width of each of the first and second electrodes is in the range of 180um to 400um, a distance between the first and second electrodes is in a range of 0.5mm to 1.5mm,
Wherein a line width of each of the first and second conductive wirings is greater than a line width of the first and second electrodes and is 1 mm or more and 2.5 mm or less,
The distance between the first and second conductive wirings is 4 mm or more and 8 mm or less,
The length of the conductive adhesive in the first direction is larger than the line width of the conductive lines, 1.25 times or less of the line width of the conductive lines,
The length of the insulating layer in the first direction is larger than the length in the first direction of the conductive adhesive, is narrower than the distance between the conductive wires,
The line width of the conductive adhesive in the second direction is equal to or greater than a line width of each of the first and second electrodes,
Wherein the second directional line width of the insulating layer is greater than the second directional line width of the conductive adhesive,
Wherein the ratio of the length of the insulating layer in the first direction to the length in the first direction of the conductive adhesive is between 1: 1.1 and 1.7. The method according to claim 1,
Wherein the ratio of the length of the insulating layer to the line width of the conductive wirings in the first direction is between 1: 1.1 and 2. delete The method according to claim 1,
The length of the conductive adhesive in the first direction is between 1 mm and 3 mm, and the length of the insulating layer in the first direction is between 1.1 mm and 4 mm. The method according to claim 1,
Wherein a line width of each of the first and second electrodes is narrower than a length of the conductive adhesive and the insulating layer in the first direction. The method according to claim 1,
Wherein an interval between the first electrode and the second electrode is narrower than a length in the first direction of the conductive adhesive and the insulating layer. The method according to claim 1,
The semiconductor substrate of each solar cell is doped with an impurity of the first conductivity type,
An emitter portion doped with a second conductive impurity opposite to the first conductivity to the rear surface of the semiconductor substrate; And a rear electric field portion doped with impurities of the first conductivity type at a high concentration from the semiconductor substrate,
Wherein each of the first electrodes is connected to the emitter section, and each of the second electrodes is connected to the rear electric section.

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