KR101901643B1 - Ion beam irradiation apparatus with controlling ion beam current uniformity and thereof techniques - Google Patents
Ion beam irradiation apparatus with controlling ion beam current uniformity and thereof techniques Download PDFInfo
- Publication number
- KR101901643B1 KR101901643B1 KR1020150124609A KR20150124609A KR101901643B1 KR 101901643 B1 KR101901643 B1 KR 101901643B1 KR 1020150124609 A KR1020150124609 A KR 1020150124609A KR 20150124609 A KR20150124609 A KR 20150124609A KR 101901643 B1 KR101901643 B1 KR 101901643B1
- Authority
- KR
- South Korea
- Prior art keywords
- current
- filament
- value
- routine
- calculating
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24535—Beam current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
Landscapes
- Electron Sources, Ion Sources (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Abstract
An ion beam irradiating apparatus (100) capable of uniformizing the beam current in a short time with high stability is provided.
In the uniform control routine for uniformizing the ion beam, the control apparatus includes a weighting coefficient calculating routine for calculating a weighting factor that is a degree by which a change in each filament current (IF) varies with a change in each beam current (IB) The filament theory current calculation routine for calculating the theoretical current value of each filament to bring the value of each beam current IB close to a predetermined target current value is executed based on the weight coefficient obtained by the coefficient calculation routine.
Description
The present invention relates to an ion beam irradiating apparatus and the like for irradiating an ion beam onto a wafer or the like.
For example, in the production of a liquid crystal display or a semiconductor device, an ion beam irradiating device is used to inject impurities such as phosphorus (P) or boron (B) into a liquid crystal glass substrate or a semiconductor substrate .
The ion source used in such an ion beam irradiating apparatus has a plasma generating container for generating a plasma therein and a plurality of filaments provided inside the plasma generating container. By flowing the filament currents and heating them, And collides with the material gas molecules in the plasma generation container to generate plasma, and the plasma is drawn out by the drawing electrode system to be accelerated as an ion beam.
The ion beam accelerated to a predetermined energy level is irradiated to the surface of the object to be processed. In order to uniformize the amount of ion implantation for each part of the object to be processed, in the conventional ion beam irradiating apparatus, A beam current sensor (for example, Faraday Cup) for measuring the ion beam current is provided. The beam profile of the ion beam obtained from each of the beam currents measured by these beam current sensors is adjusted so that the operator can adjust the current flowing through each filament so that the ion beam can be made uniform.
Recently, as shown in
In
In
However, since any control device controls the filament current based only on the average current of the beam current sensor for each group, the measurement current of each beam current sensor in the group, that is, the beam current at each position of the ion beam, Or it is necessary to repeat the beam current uniforming routine in order to solve it.
In short, the ion beams extracted from the plasma by the thermoelectrons emitted from the respective filaments ideally form a Gaussian distribution, and each beam current sensor inherently has different current values. Therefore, the beam current sensors are grouped There is a limit to uniformizing the beam current by the configuration of
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide an ion beam irradiating apparatus capable of uniformizing the beam current with a short time, and a program used therefor.
That is, the ion beam irradiating apparatus according to the present invention comprises: an ion source having a plurality of filaments capable of independently flowing a current; and an ion source for irradiating a beam current of the ion beam extracted from the ion source to a plurality of positions A beam current sensor of the number of filaments or more and a control device for controlling a filament current flowing through each of the plurality of filaments.
Then, the control device calculates an average value of beam currents obtained from all or a part of the beam current sensor, and executes an average beam current control routine for controlling each filament current so that the average value falls within a predetermined target range, And a uniform current control routine for calculating and outputting the filament theoretical current for uniformizing the beam current,
Wherein the control device includes a weighting coefficient calculating routine for calculating a weighting coefficient that is a degree by which a change in each filament current affects a change in each beam current, and a weighting coefficient calculating routine for calculating, based on the weighting factor obtained by the weighting factor calculating routine, And the filament current calculation routine for calculating the theoretical current value of each filament to bring the value of each beam current close to a predetermined target current value.
As a specific embodiment for obtaining a short-time and effective weight coefficient, in the weighting factor calculating routine, the controller sets the current of each filament to a preset value by setting each filament current adjusted by the average beam current control routine as an initial value And calculates the weight coefficient based on the variation amount of each beam current generated in accordance with the change of each filament current.
Even if the uniformity of the beam current can be realized by simply feeding the filament theoretical current into the filament, there is a possibility that the beam current as a whole may be short or short. In order to solve this problem, for example, the control apparatus may execute the average beam current control routine again after the uniform control routine.
If only the uniformity of the beam current is excessively sought, the controllability may deteriorate, or the filament current may be unevenly distributed, resulting in a load on a particular filament, which may shorten the life of the product or the maintenance period.
In order to solve this problem, in the uniformity control routine, the control device further executes a filament theory current correction routine for correcting a theoretical current value of each filament obtained by the filament theory current calculation routine, The control device calculates the theoretical uniformity of the ion beam from the filamentary theoretical current so as to satisfy the condition that the theoretical beam uniformity falls within a predetermined range including the target current value, It is preferable to make a correction to change a part of the filament theoretical current by a predetermined value in a direction in which the deviation of the value of the theoretical current decreases.
In the above description, the control device executes each control routine based on each ion beam current smoothing program. However, instead of the programmed control device, the operator manipulates the control device to adjust and collect the beam current, May be determined as a weight coefficient that is a degree of variation of each beam current.
The ion beam current smoothing method is an ion source having an ion source having a plurality of filaments capable of independently flowing a current and a beam current of an ion beam extracted from an ion source at a plurality of positions in a plane intersecting the ion beam, And a control device for controlling a filament current flowing into each of the plurality of filaments, wherein the average value of the beam currents obtained from all or a part of the beam current sensor is calculated, and the average value An average beam current control step of controlling each filament current so as to fall within the predetermined target range and a uniform control step of calculating a filament theoretical current that can equalize each beam current after the average beam current control step is executed, The average beam current control step in the control step adjusts each filament The current of each filament is changed by a predetermined value and the change of each filament current is calculated on the basis of the amount of change of each beam current generated in accordance with the change of each filament current to the change of each beam current Calculating a weighted coefficient of each filament based on the weight coefficient obtained in the weighting coefficient calculation step so as to approximate the value of each beam current to a predetermined target current value; The filament current calculation step is executed.
According to the present invention configured as described above, the filament current is not controlled based on a group of beam current averages grouped in the past, but the filament current is controlled based on the value of the beam current at each measurement position, Uniformity of the high beam current can be achieved.
On the other hand, control based on the value of each beam current may be multi-valued, multi-parameter, and may be time-consuming or unstable until stabilized by feedback control alone. Here, Since the filament current capable of realizing the uniformity of the current is fedforwardly obtained by theoretical calculation, it is possible to achieve uniformity of each beam current with high stability in a short time.
In addition, since the average beam current control routine is executed before the theoretical calculation and the theoretical calculation is performed based on the execution result, the precision of the theoretical calculation is further improved and the filament current can not be over- have.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing an overall configuration of an ion beam irradiating apparatus according to an embodiment of the present invention. FIG.
2 is a flowchart showing the operation of the control unit of the embodiment.
3 is a flowchart showing the operation of the control unit of the embodiment.
4 is a flowchart showing the operation of the control unit of the embodiment.
5 is a flowchart showing the operation of the control unit of the embodiment.
6 is a flowchart showing the operation of the control unit according to another embodiment of the present invention.
7 is a flowchart showing the operation of the control unit of the embodiment.
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings.
≪ First Embodiment >
1, the ion
The
A filament current IF is supplied from the
The ion
The beam
The
Next, the details of the uniformization routine will be described. The uniformization routine herein includes a uniform control routine and an average beam current control routine, which will be described later. In this embodiment, the homogenization routine is executed every time the objects W to be transferred are placed at the ion implantation positions. However, the execution timing of the homogenization routines is different for each lot to be worked, It can be changed appropriately.
2, the
In this mean beam current control routine, as shown in Fig. 3, the
In this average beam current control routine, as shown in
Also, some of the beam current sensors may be selected in advance, and the current of the filament may be controlled based on the average value of the beam current measured by the selected beam current sensor.
Next, when the average value of the beam currents IB measured by the average beam current control routine falls within the allowable range of the set value, the
In this uniform control routine, the
4, the
In the weighting coefficient calculating routine, the
Next, the
The calculation theory will be described below.
the beam current IB i (i = 1, 2, ..., N) measured by the i-th beam
Here, a ij represents an increase amount of the i-th cup beam current [pA / A] when the j-th filament current IF j (j = 1, 2, And is calculated from the measurement result in the weighting coefficient calculating routine. The coefficient C i is an offset coefficient for filling the difference of the current value caused by the nonlinearity of a ij having a nonlinear value with respect to the filament current value.
In order to improve the uniformity of the ion beam B, the respective filament current IF j may be changed so that the beam current IB i shown in the equation (1) becomes the target current (constant value).
When the filament current IF j is changed by? IF j , the equation (1) is expressed by the following equation (2).
Respectively. Here, △ i IB shows a variation of the beam current caused by the change of the filament current.
From the equation (2), the change amount? IB i of each beam current is expressed by the following equation (3).
Thus, when a deviation to the measured value of each beam current to a predetermined target value with the △ IB i, uniform control, the equation (Equation 3) each △ IB i (i = 1, 2, and and represented by and N) the △ IF j (j = 1, 2, and at the same time and that satisfy and, it is necessary to obtain the M). That is, it is necessary to obtain an exact solution of the N simultaneous equations. However, there are cases where the number of variables and expressions do not match in the first place. In such a case, there may be a case where there is no exact solution. In this case, an approximate solution by least square method is sought.
That is, the sum of squares S of the residuals of? IB i and the equation (3)
Respectively.
The condition of the approximate solution is that the change of the square sum S of residuals becomes zero for a minute change of? IF j (j = 1, 2, ..., M). Specifically, the minimum value is obtained, and the condition is expressed by the following equation (Equation 5).
That is, from the equations (4) and (5), a solution of a simultaneous equation consisting of M equations represented by the following equation (6) can be obtained.
Expression (6) can be obtained by finding? IF j (j = 1, 2, ..., M) developed in the following equation (7) and satisfying the expression (7).
Since the equation (7) has M variables and is composed of the same number of linear equations, the Cramer formula can be applied. From the Kramer formula, the solution of equation (7)
. Here, the matrix X is represented by the following equation (9), and the matrix X j represents a matrix obtained by replacing the j-th column of the matrix X with the right side of the equation (7).
From the above, it is possible to obtain a set of filament current values necessary for beam current control. Actually, the
Next, the
Thus, the uniformity control routine is terminated.
Next, the
Then, it is determined whether or not each of the measured beam currents IB i falls within a predetermined target range, that is, whether the uniformity is within a preset range (step S7). If the uniformity is satisfied, the homogenization routine is terminated. Otherwise, the process returns to step S3.
According to the above configuration, the filament current is not controlled on the basis of a group of beam current averages grouped in the past, but the filament current is controlled based on the value of the beam current at each measurement position, So that the current can be made uniform.
On the other hand, the control based on the value of each beam current may be multi-valued, multi-parameter, and it may be sufficient if the feedback control only takes time or becomes unstable until stabilization. Here, the uniformity of each beam current is realized The filament current can be obtained in a feedforward manner by theoretical calculation using, for example, a least squares method. Therefore, the uniformity of each beam current can be achieved with high stability in a short time. Further, since the average beam current control routine is executed before the theoretical calculation and the theoretical calculation is performed based on the execution result, the precision of the theoretical calculation (in particular, the accuracy of the weight coefficient) is further improved, and the average beam current control routine The filament current can not be compensated by the filament current alone.
Further, in the present embodiment, since the above-described routines are executed for each object to be created or for each lot, the latest data can be used, so that it is possible to cope with a change in the condition of the apparatus.
≪ Second Embodiment >
Next, a second embodiment of the present invention will be described.
In the second embodiment, as shown in FIG. 5, the point that the filament theoretical current correction routine (step S4 ') for correcting the filament theoretical current calculated by the routine is executed after the filament theoretical current calculation routine in the uniforming routine different.
This filamentary theoretical current correction routine does not immediately output the optimized filament theoretical current per se to obtain a uniform beam current, but on condition that the uniformity of the beam current is within a permissible range somewhat less than the optimal value, And to correct the value of each filament theoretical current in the direction to be averaged.
Next, the filament theoretical current correction routine will be described in detail.
In this filamentary theoretical current correction routine, as shown in Fig. 6, the
More specifically, in this output / recalculation determination routine, the control apparatus calculates the theoretical uniformity of the ion beam B (or each beam current) from the filament theoretical current as shown in Fig. 7 (step Sb41 ).
Then, it is determined whether or not the theoretical beam uniformity is within the predetermined range (step Sb42). If the theoretical beam uniformity is not included, it is determined that the filament theoretical current is outputted as it is (step Sb45). The reason is that the filament theoretical current correction routine corrects the direction of mitigating the optimum value of the theoretical beam uniformity as described above, and therefore, the theoretical beam uniformity at this judgment time (step Sb42) If it does not fall within the set range, the subsequent filament theoretical current correction routine is performed to further deteriorate the theoretical beam uniformity, thereby deviating from the allowable range.
On the other hand, when the theoretical beam uniformity falls within the predetermined range, it is determined whether or not the absolute value average of the difference between the pre-control current of each filament and the theoretical current of each filament is equal to or less than a preset value (step Sb43 ). If it is less than the predetermined value, it is determined that the filament theoretical current is output as it is (step Sb45), and the flow proceeds to step S5 shown in Fig. This is because the nonlinearity effect of a ij can be judged to be small. Otherwise, it is determined that recalculation is necessary, that is, correction is required (step Sb44).
However, when it is determined in this output / recalculation judgment routine that re-calculation is necessary, the
Next, the
Then, the output / recalculation judging routine is executed (step Sb34). When the filament current is to be recalculated, the procedure goes to step Sb35, where a filament having the theoretical current value farthest from the average theoretical current value It is determined whether the FIL ext1 is the FIL ext1 .
If the result is FIL ext1 , the process returns to step Sb32.
Otherwise, the
According to the second embodiment, the difference between the filament current value before control, that is, the filament current value adjusted by the average beam current control routine, and the filament theoretical current value is reduced while ensuring uniformization of the ion beam, Can be improved.
This is done for the first time by focusing on the fact that the dependency on the beam is not proportional to the amount of increase in the filament current value. This makes it possible to reduce the error between the theoretical calculation based on the obtained weight coefficient and the actual uniformity. Further, it is possible to obtain an effect that controllability and control stability are superior to those of the first embodiment.
Also, the uniformity of the filament can be maintained at a good value. As a result, it is possible to avoid the load from being applied only to a specific filament.
In addition, the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications are possible without departing from the spirit of the present invention.
100: ion beam irradiation device 2: ion source
22: filament 3: beam current sensor
4: Control device IB: Beam current
IF: filament current
Claims (6)
The control device calculates an average value of beam currents obtained from all or a part of the beam current sensor and executes an average beam current control routine for controlling each filament current so that the average value falls within a predetermined target range, And a uniform control routine for calculating and outputting the filament theoretical current for uniformizing the current,
Wherein the control device includes a weighting coefficient calculating routine for calculating a weighting coefficient that is a degree by which a change in each filament current affects a change in each beam current, and a weighting coefficient calculating routine for calculating, based on the weighting factor obtained by the weighting factor calculating routine, And a filament current calculation routine for calculating a theoretical current value of each filament to bring the value of each beam current close to a predetermined target current value.
Wherein the controller executes the average beam current control routine again after the uniform control routine.
In the weighting coefficient calculating routine, the control device changes the current of each filament by a predetermined value with each filament current adjusted by the average beam current control routine as an initial value, And the weight coefficient is calculated on the basis of a variation amount of each beam current.
The control apparatus further executes a filament theory current correction routine for correcting a theoretical current value of each filament obtained by the filament theory current calculation routine in the uniformity control routine,
The control apparatus calculates the theoretical uniformity of the ion beam from the filamentary theoretical current in the filament theory current correction routine and determines whether the theoretical beam uniformity falls within a predetermined range including the target current value Wherein the correction is performed so as to change a part of the filament theoretical current by a predetermined value in a direction in which the deviation of the value of the filament theoretical current decreases as long as it meets the requirement.
The control device calculates an average value of beam currents obtained from all or a part of the beam current sensor and executes an average beam current control routine for controlling each filament current so that the average value falls within a predetermined target range, The uniformity control routine for calculating and outputting the filament theoretical current which can make the current uniform can be executed,
Wherein the control unit changes the currents of the filaments by a predetermined value with each filament current adjusted by the average beam current control routine as an initial value, A weight coefficient calculating routine for calculating a weight coefficient which is a degree by which the change of each filament current affects the change of each beam current based on the variation amount of the beam current,
Based on the weight coefficient obtained in the weighting coefficient calculating routine, the filament current calculating routine for calculating the theoretical current value of each filament so as to bring the value of each beam current close to a predetermined target current value The program being stored on a medium.
An average beam current control step of calculating an average value of beam currents obtained from all or a part of the beam current sensor and controlling each filament current so that the average value falls within a predetermined target range;
A uniform control step of calculating a filament theoretical current that can equalize each beam current after the average beam current control step is executed,
Wherein in the uniformity control step, each filament current adjusted by the average beam current control step is set as an initial value, the current of each filament is changed by a predetermined value, and the current of each beam current A weight coefficient calculating step of calculating a weight coefficient which is a degree of change of each filament current on a variation of each beam current,
And a filament current calculation step of calculating a theoretical current value of each filament for approximating the value of each beam current to a predetermined target current value based on the weight coefficient obtained in the weight coefficient calculation step .
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2014-233320 | 2014-11-18 | ||
JP2014233320A JP6350234B2 (en) | 2014-11-18 | 2014-11-18 | Ion beam irradiation apparatus and program used therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20160059409A KR20160059409A (en) | 2016-05-26 |
KR101901643B1 true KR101901643B1 (en) | 2018-09-27 |
Family
ID=55989233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150124609A KR101901643B1 (en) | 2014-11-18 | 2015-09-03 | Ion beam irradiation apparatus with controlling ion beam current uniformity and thereof techniques |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6350234B2 (en) |
KR (1) | KR101901643B1 (en) |
CN (1) | CN105609397B (en) |
TW (1) | TWI612552B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6529000B2 (en) * | 2017-09-27 | 2019-06-12 | 日新イオン機器株式会社 | Ion source, operating method of ion source |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001023532A (en) | 1999-07-09 | 2001-01-26 | Nissin Electric Co Ltd | Control method for ion source and ion doping device |
JP2008293724A (en) * | 2007-05-23 | 2008-12-04 | Ihi Corp | Ion implanting device, and method for adjustment of uniformity of the ion beam |
JP2008305666A (en) | 2007-06-07 | 2008-12-18 | Nissin Ion Equipment Co Ltd | Ion implanting device |
JP2009205845A (en) * | 2008-02-26 | 2009-09-10 | Nissin Ion Equipment Co Ltd | Ion source and ion implanting device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2970851B1 (en) * | 1998-08-11 | 1999-11-02 | 山口日本電気株式会社 | Ion implanter |
JP3736196B2 (en) * | 1999-04-30 | 2006-01-18 | 日新イオン機器株式会社 | Ion implanter |
JP4186334B2 (en) * | 1999-09-13 | 2008-11-26 | 日新イオン機器株式会社 | Ion implanter |
US6555831B1 (en) * | 1999-04-30 | 2003-04-29 | Nissin Electric Co., Ltd. | Ion implanting apparatus |
JP2004362901A (en) * | 2003-06-04 | 2004-12-24 | Sharp Corp | Ion doping device, ion doping method, and semiconductor device |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
JP4179337B2 (en) * | 2006-05-17 | 2008-11-12 | 日新イオン機器株式会社 | Ion source and operation method thereof |
CN102522352B (en) * | 2011-12-22 | 2016-01-27 | 上海华虹宏力半导体制造有限公司 | The checkout gear of apparatus for stability of ion beam and detection method |
-
2014
- 2014-11-18 JP JP2014233320A patent/JP6350234B2/en active Active
-
2015
- 2015-09-03 KR KR1020150124609A patent/KR101901643B1/en active IP Right Grant
- 2015-09-09 CN CN201510569675.2A patent/CN105609397B/en active Active
- 2015-09-21 TW TW104131104A patent/TWI612552B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001023532A (en) | 1999-07-09 | 2001-01-26 | Nissin Electric Co Ltd | Control method for ion source and ion doping device |
JP2008293724A (en) * | 2007-05-23 | 2008-12-04 | Ihi Corp | Ion implanting device, and method for adjustment of uniformity of the ion beam |
JP2008305666A (en) | 2007-06-07 | 2008-12-18 | Nissin Ion Equipment Co Ltd | Ion implanting device |
JP2009205845A (en) * | 2008-02-26 | 2009-09-10 | Nissin Ion Equipment Co Ltd | Ion source and ion implanting device |
Also Published As
Publication number | Publication date |
---|---|
CN105609397B (en) | 2017-06-30 |
JP2016100053A (en) | 2016-05-30 |
JP6350234B2 (en) | 2018-07-04 |
KR20160059409A (en) | 2016-05-26 |
TW201620002A (en) | 2016-06-01 |
CN105609397A (en) | 2016-05-25 |
TWI612552B (en) | 2018-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7462847B2 (en) | Ion implanter and ion implantation control method thereof | |
KR102272806B1 (en) | Ion implanting device, beam energy measurement device and beam energy measurement method | |
CN105428193B (en) | The method of adjustment of ion implantation apparatus and ion beam | |
US9379030B2 (en) | Ion implantation method and ion implantation apparatus | |
TWI253097B (en) | Methods and apparatus for scanned beam uniformity adjustment in ion implanters | |
US10074507B2 (en) | Electron beam drawing apparatus and electron beam drawing method | |
US10361066B2 (en) | Ion implantation apparatus | |
US20150311077A1 (en) | Ion implantation method and ion implantation apparatus | |
KR101901643B1 (en) | Ion beam irradiation apparatus with controlling ion beam current uniformity and thereof techniques | |
US7547460B2 (en) | Ion implanter optimizer scan waveform retention and recovery | |
JP5989613B2 (en) | Ion implantation apparatus, magnetic field measurement apparatus, and ion implantation method | |
US11264205B2 (en) | Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates | |
US6590216B1 (en) | Servo control for high emittance electron source | |
JP4101746B2 (en) | Method and apparatus for ion implantation with variable spatial repetition rate scan lines | |
KR20160090746A (en) | Plasma processing apparatus | |
JP2008293724A (en) | Ion implanting device, and method for adjustment of uniformity of the ion beam | |
TWI725323B (en) | Ion source and operation method of the same | |
CN106415791B (en) | Ion implantation system and the method using Ion Beam Treatment workpiece | |
US9230776B2 (en) | Ion irradiation apparatus and ion irradiation method | |
JP2014139928A (en) | Method for controlling discharge plasma-based radiation source for stabilizing radiation dose emitted in pulsed manner | |
JP5444097B2 (en) | Particle beam irradiation apparatus and particle beam therapy apparatus | |
JP2021144789A (en) | Magnetic field lens control method and charged particle beam device | |
KR20100138468A (en) | Method of implanting ions for having uniform beam angle | |
JP2001101991A (en) | Ion implanter and method for regulating ion implantation dosage | |
KR20110081520A (en) | Method for supplying rf power of a plasma device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |