KR101897027B1 - A raman spectroscopy device formed with a evaporation chamber - Google Patents

Abstract

According to an embodiment of the present invention, provided is a deposition chamber integrated Raman analyzer capable of preventing a deposition unit from being oxidized or denatured when the deposition unit moves from a deposition process to a Raman analysis process while performing a deposition process and a Raman analysis process in one space. According to an embodiment of the present invention, the deposition chamber integrated Raman analyzer comprises: a deposition chamber; a stage unit combined with a lower wall of the deposition chamber, and supporting a substrate to be deposited; a shower head unit combined with an upper wall of the deposition chamber, and injecting a gas into the deposition chamber; an analysis light source unit coupled to the other side wall of the deposition chamber, and irradiating analysis light toward a deposition unit formed by depositing deposition materials on the substrate; a Raman lens unit for collecting scattered light reflected and scattered from the analysis light by the deposition unit, and linearly moving in a vertical direction; and a Raman lens driving unit combined with the upper wall of the deposition chamber, and linearly moving the Raman lens unit in a vertical direction by being combined with the Raman lens unit.

Description

TECHNICAL FIELD [0001] The present invention relates to a deposition chamber integrated type Raman analyzer,

The present invention relates to a deposition chamber integrated Raman analyzer, and more particularly, to a deposition chamber integrated Raman analyzer, in which a deposition process and a Raman analysis process are performed in a single space to prevent the deposition section from being oxidized or denatured during movement of the deposition chamber from a deposition process to a Raman analysis process The present invention relates to a deposition chamber integrated Raman analyzer.

Raman scattering refers to a phenomenon in which an interaction occurs between a radiation and a substance, and a part of the energy of the radiation is used to transfer the vibration energy level of the molecule in the substance, and radiation having a wavelength different from that of the incident light is emitted. Also called inelastic scattering. Such analysis can be performed using Raman spectroscopy using Raman scattering.

In the prior art, when performing an analysis on a deposited material deposited in a deposition chamber, the deposition material is first deposited on the substrate in a deposition chamber, and the substrate is transferred to a Raman analyzer to perform Raman analysis on the deposition material.

When the deposition process and the Raman analysis process are performed in separate spaces as described above, there is a problem that the deposition unit formed by depositing the deposition material on the substrate is oxidized or denatured in the air.

If it is difficult to move the entire substrate on which the deposition section is formed from the deposition chamber with the Raman analyzer, the accuracy of the Raman analysis is deteriorated by taking a part of the deposition section and performing the Raman analysis.

Korean Patent No. 10-1234603 entitled " Apparatus for Inspection Surface Defect Inspection Using Raman Scattering and Method for Inspecting Inspection Surface Defects Using Raman Scattering " A light source for irradiating the inspection object with Raman laser light; A photodetector for detecting scattered light scattered by the inspection object; And a controller that is electrically connected to the photodetector and measures Raman spectrum and Raman shift from the detected scattered light and compares the measured Raman shift with a plurality of defect discrimination Raman shifts predefined for each type of defect, There is provided an apparatus for inspecting a surface of a test object using Raman scattering which includes a defect determination unit for determining whether or not a defect is present and the type of a defect.

Korea Patent No. 10-1234603

In order to solve the above problems, an object of the present invention is to provide an apparatus in which a deposition process and a Raman analysis process are performed in a single space.

It is another object of the present invention to provide an apparatus for performing a direct analysis on a deposition unit formed by depositing an evaporation material on a substrate.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise form disclosed. There will be.

According to an aspect of the present invention, there is provided a deposition apparatus including: a deposition chamber; A stage part coupled to a lower wall of the deposition chamber and supporting a substrate to be deposited; A shower head coupled to an upper wall of the deposition chamber and injecting gas into the deposition chamber; An analyzing light source coupled to the other side wall of the deposition chamber and configured to irradiate analytical light toward the deposition unit formed by depositing the deposition material on the substrate; The Raman lens unit for reflecting the scattered scattered light reflected from the deposition unit to perform the linear movement in the vertical direction; And a Raman lens driving unit coupled to an upper wall of the deposition chamber and coupled to the Raman lens unit to linearly move the Raman lens unit in the vertical direction, And performing an analysis process.

In an embodiment of the present invention, the apparatus may further include a stage driving unit positioned below the deposition chamber and coupled to the stage unit and linearly moving the stage unit in the vertical and horizontal directions.

In the embodiment of the present invention, the stage unit may further include a heater for heating the substrate.

The apparatus may further include an energy light source unit coupled to one side wall of the deposition chamber and supplying energy to the gas by irradiating energy light into the deposition chamber.

In the embodiment of the present invention, the energy light source unit may perform a cone motion in which the outer surface of the energy light source unit draws a side surface of the cone.

In an embodiment of the present invention, the energy beam may be a plasma beam or a laser beam.

In an embodiment of the present invention, the shower head portion may be formed in the shape of a ring surrounding the periphery of the Raman lens driving portion.

In an embodiment of the present invention, the apparatus may further include a pump unit for discharging the gas inside the deposition chamber.

In the embodiment of the present invention, the pump part may recover a part of the gas injected into the deposition chamber and supply the part to the shower head part.

In an embodiment of the present invention, the Raman lens driving unit may include a cover unit that opens or closes a moving space of the Raman lens unit formed in the Raman lens driving unit.

In the embodiment of the present invention, the analysis light source unit may perform the cone motion in which the outer surface of the analysis light source unit draws the side surface of the cone.

In an embodiment of the present invention, the Raman lens driving unit may include a camera for observing the degree of formation of the evaporation unit.

In an embodiment of the present invention, the apparatus may further include an analyzer for analyzing the scattered light condensed by the Raman lens and analyzing the state of the deposition unit.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: i) fixing the substrate to the stage unit; ii) injecting the gas from the showerhead into the deposition chamber while adjusting the pressure in the deposition chamber; iii) after the positions of the stage and the energy light source are adjusted, the energy light source irradiates the substrate with the energy light to perform deposition on the substrate; iv) discharging the gas inside the deposition chamber; v) after the position of the stage unit, the analysis light source unit, and the Raman lens unit is adjusted, the analysis light source irradiates the analysis light to the evaporation unit on the substrate, and the analysis light reflected by the evaporation unit is reflected by the Raman Converging the light onto a lens portion; vi) performing a Raman analysis on the deposition unit in the analysis unit; And vii) withdrawing the substrate within the deposition chamber.

The advantage of the present invention with the above structure is that the deposition process and the Raman analysis process are performed in a single space to prevent the deposition section from being oxidized or denatured during the deposition process and the Raman analysis process.

The advantage of the present invention is that the Raman analysis of the deposition unit is performed using a Raman analyzer in the deposition chamber, so that direct analysis of the deposition unit can be performed even during the deposition process.

It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the configuration of the invention described in the claims.

1 is a perspective view of a deposition chamber integrated Raman analyzer according to an embodiment of the present invention.
2 is a cross-sectional view of a deposition chamber integrated Raman analyzer according to an embodiment of the present invention.
3 is a plan view of the Raman lens driving unit according to an embodiment of the present invention as viewed from below.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" (connected, connected, coupled) with another part, it is not only the case where it is "directly connected" "Is included. Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a deposition chamber integrated Raman analyzer according to an embodiment of the present invention, FIG. 2 is a sectional view of a deposition chamber integrated Raman analyzer according to an embodiment of the present invention, and FIG. FIG. 2 is a plan view of the Raman lens driving unit 100 taken along the line II-III in FIG.

2 is a cross-sectional view of the deposition chamber integrated Raman analyzer according to the present invention taken along line A-A 'in FIG.

As shown in FIGS. 1 to 3, the deposition chamber integrated Raman analyzer of the present invention includes a deposition chamber 600; A stage portion 410 coupled to the lower wall of the deposition chamber 600 and supporting the substrate 430 to be deposited; A showerhead 500 coupled to the top wall of the deposition chamber 600 and injecting gas into the deposition chamber 600; An analysis light source 310 coupled to the other side wall of the deposition chamber 600 and irradiating the analysis light toward the deposition unit 431 formed by depositing the deposition material on the substrate 430; A Raman lens unit 110 for collecting scattered scattered light reflected by the vapor deposition unit 431 and performing linear movement in the vertical direction; And a Raman lens driving unit 100 coupled to the upper wall of the deposition chamber 600 and coupled to the Raman lens unit 110 to linearly move the Raman lens unit 110 in the vertical direction, The deposition process and the Raman analysis process can be performed inside the deposition chamber 600.

As described above, the deposition process and the Raman analysis process are performed in a single space, thereby preventing the deposition unit 431 from being oxidized or denatured during the movement of the deposition unit 431 from the deposition process to the Raman analysis process.

In addition, since the Raman analysis of the deposition unit 431 is performed using the Raman analyzer in the deposition chamber 600 as a single space, a direct analysis of the deposition unit 431 can be performed even during the deposition process .

As shown in FIG. 1, the deposition chamber 600 may be formed in a cylindrical shape, but is not limited thereto. The deposition chamber 600 may be formed in a polygonal shape having an internal space.

A door is formed on the side wall of the deposition chamber 600 so that the inside of the deposition chamber 600 can be opened or closed by opening or closing the door and the substrate 430 can be opened / It can be brought in or taken out against the inside.

The stage unit 410 is formed of a stage 411 and a stage bar 412. The substrate 430 is positioned and supported on the upper surface of the stage 411. The stage 411 has a fixing jig, And the substrate 430 can be fixedly supported.

However, the fixing method of the substrate 430 is not limited to the fixing method using the fixing jig, but the magnet may be provided on the stage 411, the lower part of the substrate 430 may be formed of metal attached to the magnet, The substrate 430 can be fixed to the upper surface of the stage 411. [

The stage unit 410 can perform linear movement in the vertical and horizontal directions. The deposition chamber integrated Raman analyzer according to the present invention includes a stage driving unit 420 which is positioned below the deposition chamber 600 and is coupled to the stage unit 410 and linearly moves the stage unit 410 in the vertical and horizontal directions, As shown in FIG.

The stage driving unit 420 is coupled to the stage bar 412 and can linearly move the stage 411 up and down and left and right by linearly moving the stage bar 412 up and down and left and right.

The stage driving unit 420 may perform the deposition process or the Raman analysis process while rotating the stage 411 to rotate the substrate 430 by rotating the stage bar 412.

In the Raman analysis process, Raman analysis is performed after the stage 411 and the Raman lens unit 110 move close to each other, and as the moving distance of the Raman lens unit 110 increases, The linear movement of the Raman lens unit 110 and the linear movement of the stage 411 can be performed simultaneously.

The shower head part 500 may be formed in the shape of a ring.

A plurality of holes are formed in the lower portion of the shower head 500 in the form of a ring, and gas supplied from a supply part for supplying gas can be injected into the deposition chamber 600 through a plurality of holes. As shown in FIGS. 1 and 2, the showerhead 500 may be formed adjacent to the Raman lens driver 100 in the form of a ring surrounding the periphery of the Raman lens driver 100.

The shower head unit 500 is connected to the gas pipe 510 and the gas can be introduced into the shower head unit 500 from the outside through the gas pipe 510. The gas piping 510 may be connected to the shower head unit 500 through the upper wall of the deposition chamber 600.

A plurality of supports 610 are formed on the lower surface of the upper wall of the deposition chamber 600. The plurality of support members 610 and the shower head unit 500 are coupled to each other so that the showerhead unit 500 is fixedly supported .

In the shower head part 500, the deposition material may be ejected together with the gas. At this time, the deposition material may be supplied into the deposition chamber 600 through the shower head part 500 after being mixed with the gas at the supply part.

The gas may be formed of a gas such as argon (Ar), nitrogen (N ₂ ), helium (He), or the like and an evaporation material.

The stage unit 410 may further include a heater 413 for heating the substrate 430. [

By heating the substrate 430 by the heater 413, the high temperature decomposition of the gas on the substrate 430 or the high temperature chemical reaction can be performed to perform the deposition of the deposition material.

The deposition chamber integrated Raman analyzer of the present invention may further include an energy light source unit 210 which is coupled to one side wall of the deposition chamber 600 and supplies energy to the gas by irradiating energy light toward the substrate 430 .

The energy light source unit 210 generates plasma in the deposition chamber 600 to decompose the gas molecules of the gas into plasma energy so that the heater 413 is heated to a temperature lower than that of the heater 413 when only the heater 413 is used. It is possible to perform the deposition by using the temperature of the second electrode 413.

The energy beam may be a plasma beam or a laser beam.

In the embodiment of the present invention, it is described that energy light is a plasma beam or a laser beam, and the energy light source unit 210 is formed of a plasma gun or a laser gun. However, the present invention is not limited thereto.

Deposition using chemical vapor deposition (CVD) is well known in the art and detailed description may be omitted.

The deposition chamber integrated Raman analyzer of the present invention may further include a pump unit 700 for discharging gas inside the deposition chamber 600.

The pump unit 700 can recover a part of the gas injected into the deposition chamber 600 and supply the collected gas to the shower head unit 500.

2, the pump unit 700 may be coupled to the lower portion of the deposition chamber 600. However, the present invention is not limited thereto, and may be connected to the discharge port 620 through a discharge pipe, As shown in FIG.

Although the deposition material is deposited on the substrate 430 in the deposition chamber 600, the deposition material that is not deposited on the substrate 430 is contained in the gas, and the pump unit 700 includes the recovered gas And the deposition material is further mixed in the gas containing the deposition material, and the supplying part can supply the reusable gas to the shower head part 500. [

2 and 3, the Raman lens driving unit 100 may include a cover unit 130 that opens or closes the moving space 120 of the Raman lens unit formed in the Raman lens driving unit 100. Here, the cover part 130 may include one or more covers 131.

In FIGS. 2 and 3, it can be shown that the cover part 130 is formed of two covers 131. The cover 131 may perform a function of opening and closing the moving space 120 of the Raman lens unit to be opened or closed.

Fig. 3 (a) shows a state in which two covers 131 are opened, and Fig. 3 (b) shows a state in which two covers 131 are closed.

Each of the covers 131 has a restoring force with respect to the closing direction, and such a restoring force can be realized by a spring coupled to each cover 131.

When the Raman lens unit 110 linearly moves downward in the moving space 120 of the Raman lens unit, the Raman lens unit 110 pushes the closed cover 131, and the cover 131 is opened The moving space 120 of the Raman lens part is opened and the Raman lens part 110 may be exposed to the inside of the deposition chamber 600. [

When the Raman lens unit 110 linearly moves upward in the moving space 120 of the Raman lens unit, the cover 131 is closed by the restoring force, thereby closing the moving space 120 of the Raman lens unit, The Raman lens portion 110 can be isolated from the inside of the deposition chamber 600. [

When the moving space 120 of the Raman lens unit is closed, the pump unit 700 can discharge the gas in the moving space 120 of the Raman lens unit so that the moving space 120 of the Raman lens unit becomes vacuum, The contact force between the Raman lens driving part 100 and the cover 131 is increased so that the moving space 120 of the Raman lens part can be easily closed so that gas can not penetrate into the moving space 120 of the Raman lens part.

The energy light source unit 210 can perform the cone motion in which the outer surface of the energy light source unit 210 draws the side surface of the cone.

Accordingly, the energy light source unit 210 can move the irradiation point of the energy light, the irradiation point of the energy light can be varied within the deposition chamber 600, and the gas molecules of the gas can be efficiently decomposed.

In addition, the analysis light source 310 can perform the cone motion in which the outer surface of the analysis light source unit 310 draws the side surface of the cone.

Accordingly, the analysis light source 310 can move the irradiation point of the analysis light, and the irradiation point of the analysis light to the deposition unit 431 can be varied. The analysis light can be irradiated to various positions by the linear movement of the stage unit 410 in the up and down and left and right directions and cone motion of the analysis light source unit 310. [

Scattered light can be easily guided to the Raman lens portion 110 by the linear movement of the stage portion 410 in the up and down and left and right directions, the conical motion of the analysis light source portion 310, and the vertical movement of the Raman lens portion 110 in the up- So that the scattering direction of the scattered light can be controlled.

The analysis light may be laser light in the near-infrared light or visible light region.

The energy light source unit 210 may perform the cone motion by driving the first light source driving unit 220 in combination with the first light source driving unit 220 coupled to the outer surface of one side wall of the deposition chamber 600 . The analysis light source 310 is coupled to the second light source driving unit 320 coupled to the outer surface of the other side wall of the deposition chamber 600 and performs the cone motion by driving the second light source driving unit 320 .

The Raman lens driving unit 100 may include a camera 140 for observing the degree of formation of the evaporation unit 431.

Here, the camera 140 is connected to an external server, and transmits an image photographed in real time to an external server so that a photographed image photographed with respect to the formation of the deposition unit 431 on the substrate 430 can be stored in an external server have.

The deposition chamber integrated Raman analyzer of the present invention may further include an analyzer for analyzing the scattered light condensed by the Raman lens unit 110 and analyzing the state of the deposition unit 431.

The analysis unit may be provided in the Raman lens driving unit 100 or may be installed outside the deposition chamber 600. The Raman analysis data generated by the analysis unit may be transferred to an external server and stored.

A thin film coating apparatus including the deposition chamber integrated Raman analyzer of the present invention can be manufactured.

Specifically, metal, low-K, high-K, carbon, CNT, graphene, and OLED thin film growth devices can be manufactured.

Accordingly, after the metal thin film is formed, Raman analysis on the thin film coating can be performed immediately while preserving the state of the thin film.

A semiconductor substrate manufacturing apparatus including the deposition chamber integrated Raman analyzer of the present invention can be manufactured.

Accordingly, after performing the deposition on the semiconductor substrate, Raman analysis on the semiconductor substrate can be performed immediately while preserving the state of the deposition unit 431.

Hereinafter, a deposition and Raman analysis method using the deposition chamber integrated Raman analyzer of the present invention will be described.

In the first step, the substrate 430 may be fixed to the stage portion 410. [

In the second stage, the gas can be injected into the deposition chamber 600 from the shower head portion 500 while the pressure in the deposition chamber 600 is adjusted.

The pressure information inside the deposition chamber 600 sensed by the pressure sensor is transmitted to the external server and the pressure information transmitted to the external server is displayed on the display device. .

The energy light source unit 210 irradiates energy light into the deposition chamber 600 and the substrate 430 is heated by the heater 413 ), And the deposition can be performed on the substrate 430.

In the fourth step, the gas can be discharged inside the deposition chamber 600.

In the fifth step, after the positions of the stage unit 410, the analysis light source unit 310 and the Raman lens unit 110 are adjusted, the analysis light source unit 310 applies the analysis light to the vapor deposition unit 431 on the substrate 430 And the analysis light reflected by the evaporation unit 431 can be condensed by the Raman lens unit 110. [

In the sixth step, a Raman analysis on the deposition unit 431 can be performed in the analysis unit.

In the seventh step, the substrate 430 can be taken out of the deposition chamber 600.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: Raman lens driving part
110: Raman lens part
120: Moving space of the Raman lens part
130:
131: Cover
140: camera
210: energy light source part
220: first light source driver
310: Analysis light source
320: second light source driver
410:
411: stage
412: Stage bar
413: Heater
420: stage driving part
430: substrate
431:
500: shower head
510: Gas piping
600: deposition chamber
610: Support
620: Outlet
700: pump section

Claims (16)

A deposition chamber;
A stage unit coupled to the lower wall of the deposition chamber, for supporting the substrate to be deposited, and performing linear movement or rotation in the up and down and left and right directions;
A stage driving unit positioned at a lower portion of the deposition chamber to be coupled to the stage unit and linearly moving or rotating the stage unit in the vertical and horizontal directions;
A shower head coupled to an upper wall of the deposition chamber and injecting gas into the deposition chamber;
An analyzing light source coupled to the other side wall of the deposition chamber and configured to irradiate analytical light toward the deposition unit formed by depositing the deposition material on the substrate;
A Raman lens unit for collecting the scattered scattered light reflected by the deposition unit and performing linear movement in the vertical direction; And
And a Raman lens driver coupled to an upper wall of the deposition chamber and coupled with the Raman lens to linearly move the Raman lens in a vertical direction,
A deposition process and a Raman analysis process are performed in the deposition chamber, which is one space,
In the Raman analysis process, the stage unit and the Raman lens unit simultaneously move so that the stage provided in the stage unit and the Raman lens unit come close to each other, thereby preventing an increase in vibration due to an increase in the moving distance of the Raman lens unit,
Wherein the Raman lens driving unit includes a cover unit that opens or closes a moving space of the Raman lens unit formed in the Raman lens driving unit,
When the Raman lens portion linearly moves downward, the Raman lens portion pushes the cover of the cover portion so that the Raman lens portion is exposed to the inside of the deposition chamber, and when the Raman lens portion linearly moves upward, And is closed by a restoring force so that the Raman lens part is isolated from the inside of the deposition chamber.
delete The method according to claim 1,
Wherein the stage unit further comprises a heater for heating the substrate.
The method according to claim 1,
Further comprising an energy light source unit coupled to one side wall of the deposition chamber and irradiating energy light into the deposition chamber to supply energy to the gas.
The method of claim 4,
Wherein the energy light source unit performs a cone motion in which an outer surface of the energy light source unit draws a side surface of a cone.
The method of claim 4,
Wherein the energy beam is a plasma beam or a laser beam.
The method according to claim 1,
Wherein the shower head part is formed in a ring shape surrounding the periphery of the Raman lens driving part.
The method according to claim 1,
Further comprising a pump section for discharging the gas inside the deposition chamber.
The method of claim 8,
Wherein the pump unit recovers a part of the gas injected into the deposition chamber and supplies the collected gas to the shower head unit.
delete The method according to claim 1,
Wherein the analysis light source unit performs a cone motion in which the outer surface of the analysis light source unit draws a side surface of the cone.
The method according to claim 1,
Wherein the Raman lens driving unit includes a camera for observing a degree of formation of the deposition unit.
The method according to claim 1,
Further comprising an analyzer for analyzing the scattered light focused by the Raman lens and analyzing the state of the deposition unit.
A thin film coating apparatus comprising a deposition chamber integrated Raman analyzer manufactured by any one of claims 1, 3 to 9, and 11 to 13.
An apparatus for manufacturing a semiconductor substrate, comprising: a deposition chamber integrated Raman analyzer manufactured by any one of claims 1, 3 to 9, and 11 to 13.
In the deposition and Raman analysis method using the deposition chamber integrated Raman analyzer of claim 1,
i) fixing the substrate to the stage portion;
ii) injecting the gas from the showerhead into the deposition chamber while the pressure in the deposition chamber is adjusted;
iii) after the position of the stage portion or the energy light source portion is adjusted, the energy light source portion irradiates energy light into the deposition chamber, and the substrate is heated by a heater to perform deposition on the substrate;
iv) discharging the gas inside the deposition chamber;
v) after the position of the stage unit, the analysis light source unit, and the Raman lens unit is adjusted, the analysis light source irradiates the analysis light to the evaporation unit on the substrate, and the analysis light reflected by the evaporation unit is reflected by the Raman Converging the light onto a lens portion;
vi) performing a Raman analysis on the deposition unit in the analysis unit; And
and vii) withdrawing the substrate from the inside of the deposition chamber. < Desc / Clms Page number 19 >

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