KR101890215B1 - Organic luminescence emitting display device and the method of manufacturing the same - Google Patents

Abstract

An exemplary embodiment of the present invention provides a thin film transistor comprising a thin film transistor formed on a substrate, a first electrode electrically connected to the thin film transistor, a pixel defining layer formed on an edge of the first electrode, A second electrode disposed opposite to the first electrode, and an intermediate layer formed between the first electrode and the second electrode, wherein the pixel defining layer includes a protrusion formed by partially protruding from the edge portion, And the intermediate layer includes a light emitting layer in which light is emitted and a common layer deposited on the entire surface of the substrate so as to cover all of the protrusions.

Description

[0001] The present invention relates to an organic light emitting display device and a method of manufacturing the same,

The present invention relates to an organic light emitting display and a method of manufacturing the same.

The organic light emitting display includes a hole injecting electrode, an electron injecting electrode, and an organic light emitting element including an organic light emitting layer formed therebetween, wherein holes injected from the hole injecting electrode and electrons injected from the electron injecting electrode are injected into the organic light emitting layer Emitting type display device in which excitons generated in association with each other drop from an excited state to a ground state to generate light.

Since an organic light emitting display device which is a self-emission type display device does not require a separate light source, it can be driven at a low voltage and can be configured as a light and thin type. Due to its high quality characteristics such as wide viewing angle, high contrast, It is attracting attention as a next generation display device.

It is an object of the present invention to provide an organic light emitting display and a method of manufacturing the same.

An exemplary embodiment of the present invention provides a thin film transistor comprising a thin film transistor formed on a substrate, a first electrode electrically connected to the thin film transistor, a pixel defining layer formed on an edge of the first electrode, A second electrode disposed opposite to the first electrode, and an intermediate layer formed between the first electrode and the second electrode, wherein the pixel defining layer includes a protrusion formed by partially protruding from the edge portion, And the intermediate layer includes a light emitting layer in which light is emitted and a common layer deposited on the entire surface of the substrate so as to cover all of the protrusions.

In this embodiment, an undercut is formed in the spaced space between the protrusion and the via layer, and the common layer covers the protrusion and the undercut, .

In this embodiment, the thickness of the common layer may be greater than the thickness of the undercut portion.

In this embodiment, the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and one light emitting layer of the light emitting layer may be extended to an outer area of the pixel defining layer so as to cover the protrusion and the undercut portion.

In this embodiment, the light emitting layer may include a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and at least two light emitting layers of the light emitting layer may be extended to an outer region of the pixel defining layer to cover the protrusion and the undercut portion .

In the present embodiment, a via layer is provided under the first electrode, and the via layer is formed by removing a via layer in a region other than a region where the first electrode and the pixel defining layer are formed, . ≪ / RTI >

In this embodiment, the slope of the via step with respect to the ground may be smaller than the slope with respect to the ground surface of the protrusion.

In this embodiment, an undercut portion is formed in the spaced space between the protrusion and the via step, and the common layer may be deposited to cover the protrusion and the undercut portion.

In this embodiment, the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and one of the light emitting layers may be deposited to the via step so as to cover the protrusion and the undercut portion.

In this embodiment, the light emitting layer may include a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and at least two light emitting layers of the light emitting layer may cover the protrusion and the undercut portion.

In the present embodiment, the pixel defining layer may be formed of a photosensitive organic layer capable of thermal reflow.

In the present embodiment, the photosensitive organic layer may include any one of an olefin-based organic layer, an acrylic-based organic layer, and an amide-based organic layer.

According to another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: sequentially laminating a first electrode layer and a photosensitive organic film; preparing a halftone mask having a first light-transmitting portion, a second light-transmitting portion and a third light- A half-tone mask is disposed on the photosensitive organic film, and one of the first, second and third light-projecting portions is formed in a region where the first electrode is to be formed in the first electrode layer and the other is formed in a region in which the first electrode layer is to be removed Forming a first electrode on the pixel defining film forming region, and exposing the first electrode by selectively removing the exposed photosensitive organic film to correspond to the pixel defining film forming region to be disposed on an edge portion of the first electrode, Forming a pixel defining film forming region, heating the photosensitive organic film in the pixel defining film forming region to advance a thermal flow, forming an edge portion of the first electrode by the thermal flow, And forming an intermediate layer on the first electrode, wherein the forming of the intermediate layer includes forming a pixel defining layer including a protruded portion on the common layer, which is deposited on the entire surface of the substrate so as to cover the protruding portion, And forming the organic light emitting display device.

In this embodiment, the first electrode layer is deposited on top of the via layer, and the step of forming the pixel defining layer includes wet etching the photosensitive organic film, wherein the spaced space between the protrusions and the via layer An undercut portion is formed, and in the step of forming the common layer, the common layer may be formed to cover the protruding portion and the undercut portion.

In this embodiment, the thickness of the common layer may be greater than the thickness of the undercut portion.

In this embodiment, the intermediate layer includes a light emitting layer, and the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and the step of forming the intermediate layer may include forming one light emitting layer of the light emitting layer to cover the protrusion and the undercut portion And forming the emission layer to the outer region of the pixel defining layer.

In the present embodiment, the first electrode layer is stacked on top of the via layer, and the step of forming the pixel defining layer includes a step of dry-etching the photosensitive organic layer, and during the dry etching of the photosensitive organic layer, And a via layer located in a region other than a region where the first electrode is formed may be removed together with the photosensitive organic layer to form a via step in the via layer.

In this embodiment, an undercut portion is formed in the spaced space between the protrusion and the via step, and in the step of forming the common layer, the common layer is formed to cover the protrusion, the undercut portion, and the via step .

In this embodiment, the intermediate layer includes a light emitting layer, and the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and the step of forming the intermediate layer may include forming one light emitting layer of the light emitting layer to cover the protrusion and the undercut portion And forming the light emitting layer up to the via step.

The step of selectively removing the exposed photosensitive organic film to expose the first electrode and leaving the pixel defining film formation region may include removing the photosensitive organic film in the region from which the first electrode layer is to be removed, Wherein the photosensitive organic film of the region where the first electrode is to be formed remains relatively thin and the photosensitive organic film of the pixel defining film forming region is relatively thick, etching the region in which the photosensitive organic film is completely removed, Removing the electrode layer and completely removing the photosensitive organic layer of the first electrode region to expose the first electrode and leaving the photosensitive organic layer of the region in which the pixel defining layer is to be formed.

According to an embodiment of the present invention, the first electrode and the pixel defining layer may be formed by a single mask process, thereby simplifying the fabrication process and advantageously preventing disconnection of the second electrode.

It is needless to say that the effects of the present invention can be derived from the following description with reference to the drawings in addition to the above-mentioned contents.

1 is a cross-sectional view schematically showing a cross-section of an organic light emitting display according to an embodiment of the present invention.
2A to 2E are views sequentially illustrating a method of manufacturing an OLED display according to the embodiment of FIG.
3 is a cross-sectional view schematically illustrating a cross-section of an OLED display according to another embodiment of the present invention.
4 is a cross-sectional view schematically showing a cross-section of an organic light emitting display according to another embodiment of the present invention.
5 is a cross-sectional view schematically illustrating a cross-section of an OLED display according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

In the following embodiments, the terms first, second, etc. are used for the purpose of distinguishing one element from another element, rather than limiting.

In the following examples, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

In the following embodiments, terms such as inclusive or possessive are intended to mean that a feature, or element, described in the specification is present, and does not preclude the possibility that one or more other features or elements may be added.

In the following embodiments, when a part of a film, an area, a component or the like is referred to as being "above" or "above" another part, Elements and the like are interposed.

In the drawings, components may be exaggerated or reduced in size for convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings.

If certain embodiments are otherwise feasible, the particular process sequence may be performed differently from the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, or may be performed in the reverse order to that described.

1 is a cross-sectional view schematically showing a cross-section of an organic light emitting display according to an embodiment of the present invention.

The organic light emitting diode display 1000 according to the present embodiment includes a thin film transistor TFT, a first electrode 281 electrically connected to a thin film transistor TFT, a first electrode 281 A second electrode 285 disposed opposite to the first electrode 281 and a second electrode 285 disposed between the first electrode 281 and the second electrode 285. The pixel defining layer 271 is formed on the edge of the first electrode 281, And an intermediate layer 283 formed thereon.

The substrate 100 can be formed using various materials. For example, the substrate 100 can be formed using a glass material or other insulating material, or a metal thin film.

As an alternative embodiment, the substrate 100 may be a silicone-based polymer, a polyurethane, a polyurethane acrylate, an acrylate polymer, or an acrylate terpolymer. And may include at least one. The silicone-based polymer may include, for example, polydimethylsiloxane (PDMS), hexamethyldisiloxane (HMDSO), and the like.

The display portion 200 is formed on the substrate 100. The display unit 200 generates visible light so that the user can see it. The display unit 200 may include various devices, for example, an organic light emitting device, a liquid crystal display device, or the like.

As shown in FIG. 1, the display unit 200 includes an organic light emitting diode (OLED) in this embodiment. Hereinafter, the structure of the thin film transistor TFT and the organic light emitting diode OLED will be described in detail.

A buffer layer 110 may be formed on the substrate 100. The buffer layer 110 may serve as a barrier layer and / or a blocking layer for preventing impurity ions from diffusing, preventing penetration of moisture or outside air, and planarizing the surface.

A thin film transistor (TFT) may be formed on the buffer layer 110. The active layer (A) of the thin film transistor (TFT) may be made of polysilicon, and may include a channel region that is not doped with impurities, and a source region and a drain region that are formed by doping impurities on both sides of the channel region. Here, the impurity depends on the kind of the thin film transistor, and an N-type impurity or a P-type impurity is possible.

The gate insulating layer 210 may be formed on the entire surface of the substrate 100 after the active layer A is formed. The gate insulating film 210 may be formed of a multilayer or single layer of a film made of an inorganic material such as silicon oxide or silicon nitride. The gate insulating film 210 serves to insulate the active layer A from the gate electrode G located on the top.

A gate electrode G may be formed on the gate insulating layer 210 after the gate insulating layer 210 is formed. The gate electrode G may be formed through a photolithography process and an etching process.

The material of the gate electrode G may be at least one selected from the group consisting of Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ni, Ca, Ti, W, and Cu.

After the gate electrode G is formed, a first interlayer insulating film 230 may be formed on the entire surface of the substrate.

The first interlayer insulating film 230 may be made of an inorganic material. For example, the first interlayer insulating film 230 may be a metal oxide or a metal nitride. Specific examples of the inorganic material include silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al2O3) , Titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZrO2).

The first interlayer insulating film 230 may be formed of a multilayer or single layer of a film made of an inorganic material such as silicon oxide (SiOx) and / or silicon nitride (SiNx). In some embodiments, the first interlayer insulating film 230 may be a dual structure of SiOx / SiNy or SiNx / SiOy.

A source electrode S and a drain electrode D of the thin film transistor may be disposed on the first interlayer insulating film 230.

The source electrode S and the drain electrode D may be formed of a metal such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni) Nd), iridium (Ir), chromium (Cr), nickel (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten .

A via layer 250 is formed on the entire surface of the substrate 100 so as to cover the source electrode S and the drain electrode D. A first electrode 281 may be formed on the via layer 250. According to the embodiment shown in FIG. 1, the first electrode 281 is connected to the drain electrode D through a via hole.

The via layer 250 may be made of an insulating material. For example, the via layer 250 may be formed of a single layer or a plurality of layers of an inorganic material, an organic material, or an organic / inorganic composite, and may be formed by various deposition methods. In some embodiments, the via layer 250 is formed of a material selected from the group consisting of polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides resin, The resin may be formed of at least one of unsaturated polyesters resin, polyphenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene (BCB). have.

An organic light emitting diode (OLED) is disposed on the via layer 250. The organic light emitting diode OLED includes a first electrode 281, an intermediate layer 283 including a light emitting layer 283a, and a second electrode 285.

The first electrode 281 and the second electrode 285 may be formed using various conductive materials.

In the case of a top emission type structure that implements an image in the direction of the second electrode 285, the first electrode 281 may be provided as a reflective electrode. For this, a reflective film made of an alloy of Al, Ag or the like is provided.

When the first electrode 281 is used as an anode electrode, a layer made of a metal oxide such as ITO, IZO, or ZnO having a high work function (absolute value) is included. When the first electrode 281 is used as a cathode electrode, a metal having a low work function (absolute value) such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Lt; / RTI > Therefore, in this case, the above-mentioned reflective film will become unnecessary.

The second electrode 285 may be a light-transmitting electrode. In order to achieve this, a transflective film formed of a thin film of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, or Ca is formed. Alternatively, a light transmissive metal oxide such as ITO, IZO, .

When the first electrode 281 is an anode, the second electrode 285 serves as a cathode. When the first electrode 281 serves as a cathode, the second electrode 285 serves as an anode.

The intermediate layer 283 may be formed between the first electrode 281 and the second electrode 285 and may include the light emitting layer 283a.

In an alternative embodiment, the intermediate layer 283 includes a light emitting layer 283a, and a hole injection layer (HIL), a hole transport layer (HTL), a hole blocking layer (HBL) a common layer 283b such as an electron injection layer (ETL), an electron transport layer (ETL), and an electron injection layer (EIL). The present embodiment is not limited to this, and the intermediate layer 283 may further include a common layer 283b having a light emitting layer 283a and performing various other functions.

A hole injection layer (HIL) and a hole transport layer (HTL) are formed on the first electrode 281 as a common layer 283b and a hole transport layer The light emitting layer 283a may be formed on an upper portion of the light emitting layer 283a.

A hole blocking layer which is a common layer 283b may be formed on the emission layer 283a and an electron transport layer 283b which is a common layer 283b may be formed on a hole blocking layer An electron transport layer (ETL) and an electron injection layer (EIL) may be formed.

As an alternative embodiment, a hole injection layer (HIL), a hole transport layer (HTL), a hole blocking layer (ETL), an electron transport layer (ETL) And an electron injection layer (EIL) may be formed to a thickness of about 500 Å, about 700 Å, about 200 Å, about 400 Å, and about 10 Å, respectively.

According to the present embodiment, a hole injection layer (HIL), a hole transport layer (HTL), a hole blocking layer (ETL), an electron transport layer (ETL) The thickness of the common layer 283b including the electron injection layer (EIL) may be about 1810 ANGSTROM.

The hole injection layer (HIL) may be formed of a phthalocyanine compound such as copper phthalocyanine or starburst type amines such as TCTA, m-MTDATA, and m-MTDAPB.

The hole transporting layer (HTL) may be formed of a material selected from the group consisting of N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1,1-biphenyl] -4,4'- diamine (TPD) Di (naphthalen-1-yl) -N, N'-diphenylbenzidine (? -NPD).

The electron injection layer (EIL) can be formed using materials such as LiF, NaCl, CsF, Li2O, BaO, and Liq.

The electron transport layer (ETL) can be formed using Alq3.

The light emitting layer 283a may include a host material and a dopant material. Examples of the host material of the light emitting layer 283a include tris (8-hydroxy-quinolinato) aluminum (Alq3), 9,10-di (naphthyl-2-yl) anthracene (AND), 3-tert- (TBDN), 4,4'-bis (2,2-diphenyl-ethen-1-yl) -4,4'-dimethylphenyl (DPVBi), 4,4'- (P-DMDPVBi), Tert (9,9-diarylfluorene) s (TDAF), 2- (9,9'-spirobifluoren-2-yl) -9,9'-spirobifluorene (BSDF), 2,7- (TSDF), bis (9,9-diarylfluorene) s (BDAF), 4,4'-bis (2,2-diphenyl-ethen- (P-TDPVBi), 1,3-bis (carbazol-9-yl) benzene (mCP), 1,3,5-tris (carbazole- (Carbazole-9-yl) biphenyl (CBP), 4,4'-bis (carbazole-9-yl) , 4,4'-bis Bis (9-carbazolyl) -2,2'-dimethyl-biphenyl (CBDP), 4,4'-bis (carbazol- Oren ( (9-phenyl-9H-carbazole) fluorene (FL-4CBP), 4,4'-bis (9-phenyl-9H-carbazole) fluorene (FL-2CBP) and the like are used .

As the dopant material of the light emitting layer 283a, DPAVBi (4,4'-bis [4- (di-p-tolylamino) styryl] biphenyl), ADN (9,10- Anthracene) and TBADN (3-tert-butyl-9,10-di (naphth-2-yl) anthracene).

The light emitting layer 283a may have a red light emitting layer, a green light emitting layer, and a blue light emitting layer formed in regions corresponding to the red, green, and blue sub pixel regions, respectively, and the light emitting layers may have different thicknesses.

Specific examples of the material of the light emitting layer 283a include a host material containing carbazole biphenyl (CBP) or mCP (1,3-bis (carbazol-9-yl) 1-phenylisoquinoline acetylacetonate iridium, PQIr acac bis (1-phenylquinoline) acetylacetonate iridium, PQIr (t-phenylquinoline) iridium and PtOEP (octaethylporphyrin platinum) Dopant, and may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or Perylene, but not limited thereto.

In the case of a green light emitting layer, it may consist of a phosphorescent material comprising a dopant material comprising a host material comprising CBP or mCP and comprising Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) But not limited to, a fluorescent material containing Alq3 (tris (8-hydroxyquinolino) aluminum).

In the case of a blue light emitting layer, it may be composed of a phosphorescent material containing a host material including CBP or mCP and containing a dopant material including (4,6-F2ppy) 2Irpic, and alternatively spiro-DPVBi, spiro-6P (DSB), distyrylarylene (DSA), a PFO-based polymer, and a PPV-based polymer. However, the present invention is not limited thereto.

As an alternative embodiment, the light emitting layer 283a may be formed to a thickness of 200 ANGSTROM or 400 ANGSTROM.

As an alternative embodiment, the green light emitting layer and the blue light emitting layer may be formed to have a thickness of 200 ANGSTROM and the red light emitting layer may have a thickness of 400 ANGSTROM thicker.

The organic light emitting display 1000 according to the present embodiment may further include a pixel defining layer 271 formed at an edge portion of the first electrode 281. The pixel defining layer 271 may define a pixel region and a non-pixel region.

The organic light emitting diode display 1000 according to the present exemplary embodiment can form the first electrode 281 and the pixel defining layer 271 by a single mask process using a halftone mask.

As an alternative embodiment, the pixel defining layer 271 may be formed of a photosensitive organic layer capable of thermal reflow. Thermal reflow is a phenomenon in which the heated part melts while flowing down to the periphery when the organic film is heated. When a large amount of solvent is contained in the organic film, the fluidity is improved during heating, and the thermal reflow occurs well.

As an alternative embodiment, an olefin based organic film, an acrylic based organic film or an imide based organic film may be used. The degree of thermal reflow can be adjusted by increasing or decreasing the solvent content.

Accordingly, the pixel defining layer 271 is formed together with the first electrode 281 by thermal reflow instead of the conventional typical photolithography process.

That is, this is a method in which the pixel defining layer 271 can be patterned simultaneously with the first electrode 281, and a favorable effect of forming the first electrode 281 and the pixel defining layer 271 by using a single mask .

A halftone mask 10 (see FIG. 2B) can be used as an alternative embodiment to form the first electrode 281 and the pixel defining layer 271, and a manufacturing method of the organic light emitting display 1000 will be described in detail later do.

The pixel defining layer 271 may be formed at an edge portion of the first electrode 281, that is, at both ends of the first electrode 281.

As an alternative embodiment, the pixel defining layer 271 may include a protrusion 2710 protruding outward from the edge of the first electrode 281.

The pixel defining layer 271 is formed only on the first electrode 281 and the protrusion 2710 of the pixel defining layer 271 is formed outside the first electrode 281, A space may be formed between the via layer 250 and the protrusion 2710,

That is, an undercut portion 2810 may be formed between the via layer 250 and the protruding portion 2710 by a protruding portion 2710 on the outer periphery of the first electrode 281.

The thickness of the spaced space between the via layer 250 and the protrusion 2710, that is, the thickness of the first electrode 281 and the thickness of the undercut portion 2810 may be about 1140 ANGSTROM.

Accordingly, when the intermediate layer 283 is formed between the two pixel defining layers 271 formed at both edge portions of the first electrode 281 and the second electrode 285 is deposited on the upper portion, There is a possibility that the second electrode 285 may be disconnected.

The OLED display 1000 according to the present embodiment may be entirely deposited on the substrate 100 so that the common layer 283b included in the intermediate layer 283 covers the protrusion 2710. [

That is, the common layer 283b may be deposited such that the thickness of the common layer 283b is thicker than the thickness of the undercut portion 2810, so that the common layer 283b covers not only the protrusions 2710 but also the undercut portion 2810. [

The thickness of the undercut portion 2810 may be about 1140 angstroms and the thickness of the common layer 283b may be about 1810 angstroms thicker than the thickness of the undercut portion 2810. [

According to the present embodiment, the common layer 283b covers the undercut portion 2810 and can flatten the protruding portion 2710 and the undercut portion 2810 located in the outer region of the first electrode 281. [

The second electrode 285 deposited on the intermediate layer 283 is improved in step coverage by the planarized intermediate layer 283 without being affected by the protrusions 2710 and the undercuts 2810. [ There is an advantageous effect.

That is, since the intermediate layer 283 covers the protruding portion 2710 and the undercut portion 2810 in the outer region of the first electrode 281, the second electrode 285 is entirely deposited to planarize the protruding portion 2710 and the undercut portion 2810, There is an advantageous effect that it is possible to prevent the disconnection by the part 2810. [

2A to 2E are views sequentially illustrating a method of manufacturing the OLED display 1000 according to the embodiment of FIG. Hereinafter, a method of manufacturing the OLED 1000 will be described in detail.

Referring to FIG. 2A, a photosensitive organic layer 270 may be formed on the first electrode layer 281 'on which the first electrode 281 is to be formed, on which the pixel defining layer 271 is to be formed.

The photosensitive organic film 270 contains a solvent capable of thermal flow, and as an optional embodiment, an olefin-based organic film, an acrylic-based organic film or an imide-based organic film may be used.

Next, referring to FIG. 2B, the halftone mask 10 is placed on the photosensitive organic film 270 and an exposure operation is performed.

A region where the first electrode layer 281 'is to be removed by the halftone mask 100 and a region where the first electrode layer 281' remains to be the first electrode 281 and a region where the pixel defining layer 271 The regions to be formed are each exposed to different degrees.

That is, the halftone mask 10 includes a first light-transmitting portion 11 for transmitting light to a medium degree, a second light-transmitting portion 12 for substantially not passing light, and a third light- 13).

The first transmissive portion 11 is formed in a region where the first electrode layer 281 'remains and is to be a first electrode 281 which is in contact with the intermediate layer 283, The halftone mask 10 is disposed so that the second transparent portion 120 corresponds to the region where the pixel defining layer 51 is to be formed and the exposure progresses.

Then, in the 100% exposed region by the third transparent portion 13, the photosensitive organic film 270 is completely removed to expose the first electrode layer 281 'in the subsequent removal step, and the second transparent portion 12 is exposed, The photosensitive organic layer 270 remains as it is and the shape of the pixel defining layer 271 is formed. The photosensitive organic layer 270 remains in the middle of the first transparent portion 11 where the light is transmitted halfway.

In this state, when the first electrode layer 281 'of the portion where the photosensitive organic film 270 is completely removed by the third transparent portion 13 is removed by etching, the first electrode 281 is patterned Is created.

Referring to FIG. 2C, the photosensitive organic layer 272 remains thin on the first electrode 281, and the portion to be the pixel defining layer 271 remains relatively thick on the edge of the first electrode 281 do.

Next, the photosensitive organic film 272 is removed so that the first electrode 281 is exposed except for the edge portion where the pixel defining layer 271 is present.

In this case, dry etching or wet etching may be used. Wet etching is a process of performing etching using a solution, and dry etching is a process of performing etching using an ionized gas or the like.

At this time, depending on whether the photosensitive organic layer 272 is removed by dry etching or wet etching, the via layer 250 located under the first electrode 281 may be affected have.

In the manufacturing method of the OLED display 1000 according to the present embodiment, by removing the photosensitive organic film 272 by wet etching, the underlying via layer 250 can be kept flat without being affected.

The photosensitive organic layer 272 remaining on the first electrode 281 is removed as shown in FIG. In this case, the first electrode 281 to be in contact with the intermediate layer 283 (see FIG. 2E) is also exposed, and the pixel defining layer 271 is also shaped.

Accordingly, since the first electrode 281 and the pixel defining layer 271 are formed by one masking process, there is an advantageous effect that it is possible to solve the trouble of using the two masking processes conventionally.

However, since the edge portion of the first electrode 281 is not yet completely covered with the pixel defining layer 271 but a portion thereof is exposed, the second electrode 285 is exposed to the exposed portion of the first electrode 281 There is a possibility that a short circuit may occur or a light leakage may occur.

Therefore, it is necessary to cover all of the edge portions of the first electrode 281.

Therefore, in the next step, the photosensitive organic film having the shape of the pixel defining layer 271 is heated to advance the thermal flow. Then, as shown in FIG. 2E, the pixel defining layer 271 may be formed so as to cover the edge portion of the first electrode 281 while the photosensitive organic layer flows down.

In this case, not only the edge portions of the first electrode 281 are covered, but also the photosensitive organic film flows to the edge of the edge portion of the first electrode 281, so that a part of the pixel defining layer 270 is formed outside the first electrode 281 The pixel defining layer 271 may be formed so as to include the protruding portions 2710.

An empty space is formed between the protrusion 2710 and the lower via layer 250 and an undercut portion 2810 is formed between the protrusion 2710 and the via layer 250 in the outer region of the first electrode 271 Lt; / RTI >

When the second electrode 285 is directly laminated on the upper portion of the protrusion 2710 and the undercut portion 2810, the second electrode 285 may be broken by the protrusion 2710 and the undercut portion 2810 Therefore, it is necessary to cover the projecting portion 2710 and the undercut portion 2810 to planarize.

Referring to FIG. 2E, an intermediate layer 283 may be deposited on the first electrode 281 to cover the protrusion 2710 and the undercut portion 2810.

The organic light emitting diode display 1000 according to the present embodiment may be configured such that the common layer 283b included in the intermediate layer 283 covers the protrusion 2710 and the undercut portion 2810 Can be deposited.

That is, in the OLED display 1000 according to the present embodiment, the light emitting layer 283a including an organic material that generates light in the step of forming the intermediate layer 283 is formed in the edge portion of the first electrode 281 And the common layer 283b may be deposited on the entire surface.

The common layer 283b is formed so as to cover all the protruding portions 2710 of the pixel defining layer 271 and covers the protruding portions 2710 as well as the undercut portions 2810 to form the second electrode 285 The outer region of the first electrode 281 can be planarized.

The step coverage of the second electrode 285 formed on the organic light emitting display device 1000 according to the present embodiment is improved and the step coverage of the second electrode 285 formed on the under- There is an advantageous effect.

Referring to FIG. 2F, a second electrode 285 may be formed on the intermediate layer 283, which is planarized by covering the protrusion 2710 and the undercut portion 2810 of the pixel defining layer 271.

Since the first electrode 281 and the pixel defining layer 271 are formed by a single mask process, the conventional method of manufacturing the organic light emitting diode display 1000 according to the present embodiment is complicated and troublesome The protrusion 2710 and the undercut portion 2810 of the pixel defining layer 271 formed by forming the first electrode 281 and the pixel defining layer 271 simultaneously by the thermal flow There is an advantageous effect that disconnection of the second electrode 285 can be prevented.

3 is a cross-sectional view schematically illustrating a cross-section of an OLED display according to another embodiment of the present invention. In Fig. 3, the same reference numerals as those in Fig. 1 denote the same members, and a duplicate description thereof will be omitted for the sake of simplicity.

The organic light emitting diode display 2000 according to the present embodiment can form the first electrode 281 and the pixel defining layer 271 by a single mask process using a halftone mask 10 (see FIG. 2B).

In this process, the protrusion 2710, which is a region where a part of the pixel defining layer 271 protrudes outward from the edge of the first electrode 281 by the thermal flow, may be formed.

A space may be formed between the protrusion 2710 and the via layer 250 formed under the first electrode 281 at a predetermined interval. That is, an undercut portion 2810 located under the protruding portion 2710 may be formed on the outer surface of the first electrode 281.

If the second electrode 285 is directly laminated on the protruding portion 2710 and the undercut portion 2810 as the second electrode 285 may be broken by the protruding portion 2710 and the undercut portion 2810, And the undercut portion 2810 to be planarized.

The OLED display 2000 according to the present embodiment can be formed by depositing the light emitting layer 283a and the common layer 283b forming the intermediate layer 283 so as to cover the protruding portion 2710 and the undercut portion 2810 have.

As an alternative embodiment, a hole injection layer (HIL), a hole transport layer (HTL), a hole blocking layer (ETL), an electron transport layer (ETL) And a common layer 283b including at least one of an electron injection layer (EIL) may be entirely deposited on the substrate 100.

In addition, the light emitting layer 283a can also be extended to the outer region of the pixel defining layer 271 to be deposited. That is, as shown in FIG. 3, the light emitting layer 283a may be formed so as to cover all of the protruding portions 2710 of the pixel defining layer 271.

The light emitting layer 283a may be extended to cover all of the projections 2710 of the pixel defining layer 271 and cover the undercut portion 2810 formed between the protruding portion 2710 and the lower via layer 250, .

In this case, since the intermediate layer 283 covering the protruding portion 2710 and the undercut portion 2810 includes not only the common layer 283b but also the light emitting layer 283a, the intermediate layer 283 covering the protruding portion 2710 and the undercut portion 2810 283 may be thicker.

In an alternative embodiment, the thickness of the common layer 283b may be about 1810 ANGSTROM, and the thickness of the light emitting layer 283A may be about 200 ANGSTROM or 400 ANGSTROM.

The thickness of the intermediate layer 283 covering the protruding portion 2710 and the undercut portion 2810 is thicker so that the undercut portion 2810 can be more reliably covered and the second electrode 285 formed on the upper portion can be more reliably covered, There is an advantageous effect that it is possible to effectively prevent disconnection of the semiconductor device.

Only one light emitting layer 283a among the red light emitting layer, the blue light emitting layer and the green light emitting layer included in the light emitting layer 283a covers the protruding portions 2710 of the pixel defining layer 271, To an undercut portion (2810) formed between the first electrode (250) and the second electrode (250).

According to this embodiment, when the light emitting layer 283a extended to the undercut portion 2810 is a red light emitting layer, the thicknesses of the light emitting layer 283a and the common layer 283b may be about 400 Å and about 1810 Å, respectively The thickness of the intermediate layer 283 covering the undercut portion 2810 may be about 2210 angstroms.

According to this embodiment, when the light emitting layer 283a extended to the undercut portion 2810 is a green light emitting layer or a blue light emitting layer, the thicknesses of the light emitting layer 283a and the common layer 283b are formed to be about 200 Å and about 1810 Å, respectively The thickness of the intermediate layer 283 covering the undercut portion 2810 can be formed to be about 2010 A in total.

Accordingly, when the light emitting layer 283a and the common layer 283b are extended to cover the undercut portion 2810, the thickness of the intermediate layer is about 2010 A or about 2210 A, which is about 1140 A, which is the thickness of the undercut portion 2810 It is possible to effectively prevent disconnection of the second electrode 285 by covering the entire undercut portion 2810. [0252]

At least two light emitting layers 283a of the red light emitting layer, the blue light emitting layer and the green light emitting layer included in the light emitting layer 283a as an alternative embodiment cover all of the protrusions 2710 of the pixel defining layer 271, To an undercut portion (2810) formed between the first electrode (250) and the second electrode (250).

According to this embodiment, in the adjacent pixels, the light emitting layer 283a extended to cover the undercut portion 2810 may be formed by overlapping two or more of the light emitting layers 283a in the undercut portion 2810. [

In this case, the thickness of the intermediate layer 283 covering the undercut portion 2810 can be thicker, and the undercut portion 2810 can be more reliably covered to advantageously maximize the wire break prevention efficiency of the second electrode 285 It is effective.

4 is a cross-sectional view schematically showing a cross-section of an organic light emitting display according to another embodiment of the present invention. In FIG. 4, the same reference numerals as in FIG. 1 denote the same members, and a duplicate description thereof will be omitted for the sake of simplicity.

The organic light emitting display 3000 according to the present embodiment can form the first electrode 281 and the pixel defining layer 271 in a single mask process using a halftone mask 10 (see FIG. 2B).

The first electrode 281 may be formed on the via layer 250 and may be connected to the drain electrode D through a via hole.

Wet etching or dry etching may be performed as described above in forming the pixel defining layer 271. [ Wet etching is a process of performing etching using a solution, and dry etching is a process of performing etching using an ionized gas or the like.

At this time, when the pixel defining layer 271 is formed by etching by dry etching, the lower via layer 250 may be etched together.

As an alternative embodiment, the via layer 250 may be formed of a material selected from the group consisting of polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides resin, May be formed of at least one of unsaturated polyesters resin, polyphenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene (BCB). .

The pixel defining layer 271 according to this embodiment may be formed of a photosensitive organic layer, that is, an olefin-based organic layer, an acrylic-based organic layer, or an imide-based organic layer.

Accordingly, the lower via layer 250 may be etched together with the photosensitive organic layer forming the pixel defining layer 271 by dry etching.

The via layer 250 corresponding to the region other than the region where the pixel defining layer 271 and the first electrode 281 are formed may be removed as shown in FIG.

That is, a step is formed in the via layer 250 corresponding to the outer region of the pixel defining layer 271 so that the via step 251 is formed so as to be adjacent to the region where the protrusion 2710 of the pixel defining layer 271 is formed have.

The protrusion 2710 may be formed in the organic light emitting display 3000 according to the exemplary embodiment of the present invention in which a part of the pixel defining layer 271 is protruded outside the edge of the first electrode 281.

Since the protrusion 2710 and the via step 251 are spaced apart from each other by a predetermined distance, an undercut portion 2810 may be formed on the outer periphery of the first electrode 281.

An intermediate layer 283 may be formed on the first electrode 281 and the pixel defining layer 271.

The common layer 283b included in the intermediate layer 283 as an alternative embodiment may be formed by evaporation so as to cover all the pixel defining layer 271 and cover both the protruding portion 2810 and the via step 251. [

At this time, the thickness of the common layer 283b may be formed thicker than the thickness of the undercut portion 2810 between the protruding portion 2710 and the via step 251, so that the common layer 283b So as to be flattened.

As a result, as the second electrode 285 is formed on the protruded portion 2710, the undercut portion 2810 and the via step 251 which are planarized by the common layer 283b, the disconnection of the second electrode 285 There is an advantageous effect that can be prevented.

As an alternative embodiment, via step 251 and protrusion 2710 may be formed such that the angle at which the via step 251 is tilted with respect to the ground is less than the angle at which the protrusion 2710 is tilted with respect to the ground.

According to the present embodiment, the taper angle of the via step 251 located under the undercut portion 2810 may be smaller than the taper angle of the protrusion 2710 located above the undercut portion 2810. That is, the upper end of the via step 251 may be formed at least at the same position as the lower end of the protrusion 2710, or may be formed inside the lower end of the protrusion 2710.

Thus, when the common layer 283b is formed, it is possible to cover the protrusion 2710 and easily cover both the undercut portion 2810 and the via step 251 at the bottom.

5 is a cross-sectional view schematically illustrating a cross-section of an OLED display according to another embodiment of the present invention. In FIG. 5, the same reference numerals as in FIGS. 3 and 4 denote the same members, and a duplicate description thereof will be omitted for the sake of simplicity.

The organic light emitting display device 4000 according to the present embodiment can form the first electrode 281 and the pixel defining layer 271 in a single mask process by using the halftone mask 10 (see FIG. 2B).

As an alternative embodiment, the pixel defining layer 271 may be etched by dry etching and the underlying via layer 250 may be etched together.

As an alternative embodiment, the via layer 250 may be formed of a material selected from the group consisting of polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides resin, May be formed of at least one of unsaturated polyesters resin, polyphenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene (BCB) , The pixel defining layer 271 may be formed of a photosensitive organic film material, that is, an olefin-based organic film, an acrylic-based organic film, or an imide-based organic film.

Therefore, when a dry etching process is performed in the process of forming the pixel defining layer 271, the via hole (not shown) corresponding to the region other than the region where the first electrode 281 and the pixel defining layer 271 are formed 250 can be removed.

That is, as shown in FIG. 5, the via layer 250 corresponding to the edge region of the pixel defining layer 271 adjacent to the region where the protrusion 2710 of the pixel defining layer 271 is formed may be etched to form a step And as a result, the via step 251 can be formed.

The protrusion 2710 may be formed in the organic light emitting diode display 4000 according to an embodiment of the present invention in which a portion of the pixel defining layer 271 is protruded outside the edge of the first electrode 281. Since the protrusion 2710 and the via step 251 are spaced apart from each other by a predetermined distance, the undercut portion 2810 may be formed in the outer region of the first electrode 281.

An intermediate layer 283 may be formed on the first electrode 281 and the pixel defining layer 271.

The common layer 283b included in the intermediate layer 283 as an alternative embodiment may be formed by evaporation so as to cover all the pixel defining layer 271 and cover both the protruding portion 2810 and the via step 251. [

In this case, the organic light emitting diode display 4000 according to the present embodiment includes the common layer 283b and the light emitting layer 283a included in the intermediate layer 283 so as to cover the entire pixel defining layer 271, .

That is, the light emitting layer 283a may be formed by extending all the pixel defining layer 271 together with the common layer 283b to the via step 251 so as to cover the protruding portion 2710 and the undercut portion 2810.

In an alternative embodiment, the thickness of the common layer 283b may be about 1810 ANGSTROM, and the thickness of the light emitting layer 283A may be about 200 ANGSTROM or 400 ANGSTROM. The thickness of the intermediate layer 283 covering the protruding portion 2710 and the undercut portion 2810 is thicker so that the undercut portion 2810 can be more reliably covered and the second electrode 285 formed on the upper portion can be more reliably covered, There is an advantageous effect that it is possible to effectively prevent disconnection of the semiconductor device.

Only one light emitting layer 283a among the red light emitting layer, the blue light emitting layer and the green light emitting layer included in the light emitting layer 283a as an alternative embodiment covers all of the protruding portions 2710 of the pixel defining layer 271 and the protruding portions 2710, 2810 to the via step 251 to form a vapor deposition.

The thickness of the light emitting layer 283a and the common layer 283b may be about 400 A and about 250 A, respectively, when the light emitting layer 283a extended to the undercut portion 2810 and the via step 251 is a red light emitting layer. The thickness of the intermediate layer 283 covering the undercut portion 2810 may be about 2210 angstroms.

The light emitting layer 283a and the common layer 283b have a thickness of about 200 Å or more, respectively, when the light emitting layer 283a extended to the undercut portion 2810 and the via step 251 is a green light emitting layer or a blue light emitting layer, And the thickness of the intermediate layer 283 covering the undercut portion 2810 may be formed to be about 2010 A in total.

Therefore, when the light emitting layer 283a and the common layer 283b are extended to cover the protruding portion 2710, the undercut portion 2810, and the via step 251 to cover the protruding portion 2710 and the undercut portion 2810 The thickness of the intermediate layer is formed to be about 2010 A or about 2210 A which is the sum of the thicknesses of the light emitting layer 283a and the common layer 283b to be much thicker than about 1140 A which is the thickness of the undercut portion 2810, It is possible to effectively prevent disconnection of the second electrode 285.

At least two light emitting layers 283a of the red light emitting layer, the blue light emitting layer and the green light emitting layer included in the light emitting layer 283a as an alternative embodiment cover all of the protruding portions 2710 of the pixel defining layer 271 and the protruding portions 2710 and the undercut portions 2810 to the via step 251 to form a vapor deposition.

According to this embodiment, in the adjacent pixels, the light emitting layer 283a extended to cover the undercut portion 2810 and the via step 251 may be formed by overlapping at least two portions in the undercut portion 2810.

In this case, the thickness of the intermediate layer 283 covering the undercut portion 2810 can be thicker, and the undercut portion 2810 can be more reliably covered to advantageously maximize the wire break prevention efficiency of the second electrode 285 It is effective.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the invention as defined by the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention.

250: via layer
251: Via step
270: photosensitive organic film
271: Pixel definition film
2710:
281: first electrode
2810: undercut part
283: Middle layer
283a:
283b: common layer
285: second electrode

Claims (20)

A thin film transistor provided on a substrate;
A first electrode electrically connected to the thin film transistor;
A pixel defining layer formed at an edge portion of the first electrode and defining a pixel region and a non-pixel region;
A second electrode facing the first electrode; And
And an intermediate layer formed between the first electrode and the second electrode,
Wherein the pixel defining layer includes a protrusion formed by partially protruding from the edge portion,
Wherein the intermediate layer comprises a light emitting layer in which light is emitted; And a common layer deposited over the substrate to cover all of the protrusions,
The light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer,
And one of the light emitting layers is extended to an outer area of the pixel defining layer so as to cover the protrusion. The method according to claim 1,
And a via layer provided below the first electrode,
An undercut portion is formed in a spaced-apart space between the protruding portion and the via layer,
And the common layer covers the protruding portion and the undercut portion. 3. The method of claim 2,
Wherein the thickness of the common layer is larger than the thickness of the undercut portion. 3. The method of claim 2,
And one of the light emitting layers is extended to an outer area of the pixel defining layer so as to cover the protrusion and the undercut. 3. The method of claim 2,
Wherein at least two light emitting layers of the light emitting layer are extended to an outer region of the pixel defining layer so as to cover the protruding portion and the undercut portion. A thin film transistor provided on a substrate;
A first electrode electrically connected to the thin film transistor;
A pixel defining layer formed at an edge portion of the first electrode and defining a pixel region and a non-pixel region;
A second electrode facing the first electrode; And
And an intermediate layer formed between the first electrode and the second electrode,
Wherein the pixel defining layer includes a protrusion formed by partially protruding from the edge portion,
Wherein the intermediate layer comprises a light emitting layer in which light is emitted; And a common layer deposited over the substrate to cover all of the protrusions,
And a via layer provided below the first electrode,
Wherein the via layer is formed by removing a via layer in a region other than a region where the first electrode and the pixel defining layer are formed. The method according to claim 6,
Wherein a slope of the via step with respect to the ground is smaller than a slope with respect to the ground surface of the protrusion. The method according to claim 6,
An undercut portion is formed in the spaced space between the protruding portion and the via step,
Wherein the common layer is deposited to cover the protrusion and the undercut portion. 9. The method of claim 8,
The light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer,
Wherein one of the light emitting layers is deposited to the via step so as to cover the protrusion and the undercut portion. 9. The method of claim 8,
The light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer,
Wherein at least two light emitting layers of the light emitting layer are deposited to the via step so as to cover the protruding portion and the undercut portion. The method according to claim 1,
Wherein the pixel defining layer is formed of a photosensitive organic layer capable of thermal reflow. 12. The method of claim 11,
Wherein the photosensitive organic film comprises any one of an olefin-based organic film, an acrylic-based organic film, and an amide-based organic film. Stacking the first electrode layer and the photosensitive organic film in order;
Preparing a halftone mask having a first transmissive portion, a second transmissive portion, and a third transmissive portion with different light transmittances;
The halftone mask is disposed on the photosensitive organic film, and one of the first, second and third transparent portions is formed in a region where the first electrode is to be formed in the first electrode layer, And the other one of the pixel defining film forming regions to be disposed at the edge portions of the first electrodes, respectively;
Selectively exposing the exposed photosensitive organic film to expose the first electrode and leave the pixel defining film formation region;
A step of heating the photosensitive organic film in the pixel defining film formation region to progress the thermal flow;
Forming a pixel defining layer including a protrusion partially protruding from an edge portion of the first electrode by the thermal flow;
And forming an intermediate layer on the first electrode,
Wherein forming the intermediate layer includes forming a common layer deposited over the substrate to cover the protrusion,
Wherein the intermediate layer includes a light emitting layer having a red light emitting layer, a green light emitting layer, and a blue light emitting layer,
Wherein the forming of the intermediate layer includes forming the light emitting layer to a peripheral region of the pixel defining layer so that one of the light emitting layers covers the protruding portion. 14. The method of claim 13,
The first electrode layer is stacked on top of the via layer,
Wherein forming the pixel defining layer comprises wet etching the photosensitive organic film,
An undercut portion is formed in a spaced-apart space between the protruding portion and the via layer,
And the common layer is formed to cover the protrusion and the undercut portion in the step of forming the common layer. 15. The method of claim 14,
Wherein the thickness of the common layer is larger than the thickness of the undercut portion. 15. The method of claim 14,
Wherein the forming of the intermediate layer includes forming the light emitting layer to a peripheral region of the pixel defining layer so that one of the light emitting layers covers the protruding portion and the undercut portion. 14. The method of claim 13,
The first electrode layer is stacked on top of the via layer,
Wherein the forming of the pixel defining layer comprises dry etching the photosensitive organic film,
Wherein a via layer located in a region other than a region where the pixel defining layer and the first electrode are formed is removed together with the photosensitive organic layer during dry etching of the photosensitive organic layer to form a via step in the via layer ≪ / RTI > 18. The method of claim 17,
An undercut portion is formed in a spaced space between the protruding portion and the via step,
Wherein the common layer is formed to cover the protrusion, the undercut portion, and the via step in the step of forming the common layer. 19. The method of claim 18,
Wherein the forming of the intermediate layer includes forming the light emitting layer up to the via step so that one of the light emitting layers covers the protrusion and the undercut. 14. The method of claim 13, wherein selectively exposing the exposed photosensitive organic layer to expose the first electrode and leave the pixel defining layer formation region comprises:
Removing the photosensitive organic layer of the region where the first electrode layer is to be removed completely and leaving the photosensitive organic layer of the region where the first electrode is to be formed relatively thin and leaving the photosensitive organic layer of the pixel defining film forming region relatively thick;
Etching the region from which the photosensitive organic film is completely removed to remove the first electrode layer in the region; And
Removing the photosensitive organic layer of the first electrode region completely to expose the first electrode and leaving a photosensitive organic layer of the region in which the pixel defining layer is to be formed.

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