KR101889333B1 - Organic Eletro Luminescent Display Device and Manufacturing Method for the same - Google Patents

Abstract

The present invention provides a semiconductor device comprising: a substrate; An organic electroluminescent unit having an organic light emitting diode (OLED) formed in a matrix on the substrate; And a cover portion formed on the organic electroluminescent portion and blocking the organic electroluminescent portion from the outside, wherein the cover portion includes a protruding member formed on the organic electroluminescent portion and extending to the outside of the organic electroluminescent portion, And the protrusion member is formed to be in contact with the substrate so that the cover part shields the organic electroluminescent part from the outside. The organic electroluminescent display device according to claim 1,
The present invention has the effect that the end portion of the inorganic thin film increases the resistance to external stress, thereby improving adhesion between the microcrack and the substrate.

Description

[0001] The present invention relates to an organic electroluminescence display device and a method of manufacturing the same,

The present invention relates to an organic light emitting display and a method for manufacturing the same.

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such flat panel display devices include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), and an electroluminescence device .

The PDP has attracted attention as a display device which is advantageous for being thin and large in size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. Thin Film Transistor LCD (TFT LCD) is the most widely used flat panel display device, but has a narrow viewing angle and low response speed. An electroluminescent display device is roughly divided into an inorganic electroluminescent display device and an organic electroluminescent display device depending on the material of the light emitting layer. Among them, the organic electroluminescent display device is a light emitting device that emits light by itself, has a high response speed, There is a big advantage.

The organic electroluminescent display device has an organic light emitting diode (OLED) as shown in FIG.

The OLED 10 includes an organic light emitting layer for electroluminescence and a cathode electrode 90 and an anode electrode 30 opposed to each other with the organic light emitting layer therebetween. The organic emission layer includes an electron injection layer (EIL) 80, an electron transport layer (ETL) 70, an emission layer (EML) 60, a hole transport layer (HTL) (HIL) layer 40 and a hole injection layer (HIL)

When a driving voltage is applied to the anode 30 and the cathode 90, holes passing through the hole transport layer 50 and electrons passing through the electron transport layer 70 are transferred to the light emitting layer 60 to form an exciton, The resulting light emitting layer 60 emits visible light.

The organic light emitting display device forms a light emitting layer 60 at a position where OLEDs are to be arranged in R (red), G (green), and B (blue) pixels for full color implementation. The light emitting layer 60 is patterned for each pixel.

As a method of forming the light-emitting layer 60, there are known a fine metal mask (FMM) method, a laser thermal transfer method, and an ink jet method. However, these methods are not suitable for large-area substrates requiring high-precision pattern formation in a short time.

FIG. 2 is a schematic cross-sectional view of a general organic light emitting display device, and the OLED is an upper light emitting method.

2, the organic light emitting display includes a substrate 210, an organic electroluminescent unit 220, an organic thin film 230, and an inorganic thin film 240.

The substrate 210 may be made of flexible glass, plastic, stainless steel or the like having flexible characteristics.

The organic electroluminescent unit 220 is formed on the substrate 210 and includes a driving thin film transistor and an organic light emitting diode for each pixel region.

The organic light emitting diode includes a cathode electrode connected to each driving thin film transistor, an organic light emitting layer emitting light of a specific color on the cathode electrode, and an anode electrode formed on the organic light emitting layer.

The organic light emitting layer displays red, green, and blue colors. As a general method, a separate organic material emitting red, green, and blue light is patterned for each pixel.

On the organic light emitting part 220, protective films 230 and 240 are formed and encapsulated.

The protective films 230 and 240 may be formed by stacking at least one inorganic thin film 240 and at least one organic thin film 230 alternately in order to prevent moisture and oxygen from penetrating into the organic electroluminescent part 220. [ Layer.

However, the protective film of such a conventional organic light emitting display has the following problems.

As can be seen from region A in FIG. 2, the ends of the plurality of inorganic thin films 240a, 240b, and 240c are formed on the substrate 210 in an overlapping manner.

When a plurality of inorganic thin films 240a, 240b, and 240c are overlapped, a crack is generated between the inorganic thin films 240 due to a difference depending on a direction of stress applied to each inorganic thin film 240 when external stress is applied. There is a problem that arises.

This will be described using the data in Table 1 below.

The inorganic thin film thickness (A) External stress (Mpa) 1000 88.2 501 -74.4 346 -184.4 281 -374.3

As can be seen from Table 1, when the thickness of the inorganic thin film in the region A increases and becomes equal to or more than a certain thickness, the direction of the stress changes. That is, in Table 1, in the case of 1000 Å thick, it changed from the direction of the external stress to the positive direction, unlike the case of 501 Å.

When the inorganic thin film 240 and the organic thin film 230 are encapsulated by alternately stacking the protective film, a gap may be formed between the inorganic thin films 240 due to the thickness of the distal end of the inorganic thin film 240, There is a problem that external moisture and oxygen are introduced and the organic light emitting diode is deteriorated.

The present invention has been devised to solve the problems of the conventional organic light emitting display device described above,

The present invention provides an organic electroluminescent display device including an end portion of an inorganic thin film resistant to external stress and a method of manufacturing the same.

In order to achieve the above object, the present invention provides a semiconductor device comprising: a substrate; An organic electroluminescent unit having an organic light emitting diode (OLED) formed in a matrix on the substrate; And a cover portion formed on the organic electroluminescent portion and blocking the organic electroluminescent portion from the outside, wherein the cover portion includes a protruding member formed on the organic electroluminescent portion to extend to the outside of the organic electroluminescent portion, And the protrusion member is formed to be in contact with the substrate so that the cover portion shields the organic electroluminescent portion from the outside.

The present invention also provides a method of manufacturing an organic electroluminescent device, comprising: forming an organic electroluminescent portion in which an organic light emitting diode (OLED) including an organic light emitting layer is formed in a matrix form on a substrate; Forming a protective layer having the same area as the organic electroluminescent portion on the organic electroluminescent portion; And forming a cover portion formed on the protection layer and blocking the organic electroluminescent portion from the outside, wherein the cover portion includes a protruding member formed on the organic electroluminescent portion and extending to the outside of the organic electroluminescent portion, And the protruding member is formed to be in contact with the substrate so that the cover part shields the organic electroluminescent part from the outside.

According to the present invention as described above, the following effects can be obtained.

First, the resistance of the distal end of the inorganic thin film to external stress increases, thereby improving the adhesion between the microcrack and the substrate.

In addition, the end of the inorganic thin film has an effect of enhancing encapsulation as resistance to external stress is increased.

In addition, there is an effect that the deterioration of the organic light emitting diode can be delayed or prevented.

In addition, encapsulation is also enhanced when used in a flexible substrate.

1 is a view showing an organic light emitting diode (OLED) used in an organic light emitting diode display device.
2 is a schematic cross-sectional view of a conventional organic light emitting display device.
3 is a schematic plan view of an organic light emitting display device according to the present invention.
4 is a schematic cross-sectional view of an organic light emitting display device according to the present invention.
5 is a cross-sectional view of an organic light emitting display according to another embodiment of the present invention.
6 and 7 are cross-sectional views illustrating a method for fabricating an organic light emitting display device according to the present invention.

Hereinafter, preferred embodiments of an organic light emitting display and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

In describing embodiments of the present invention, when it is stated that a structure is formed "on" or "under" another structure, such a substrate is not limited to the case where these structures are in contact with each other, 3 < / RTI > is interposed.

FIG. 3 is a schematic plan view of an organic light emitting display device according to the present invention, and FIG. 4 is a cross-sectional view of the organic light emitting display device according to the present invention, taken along line A-A 'of FIG.

3 and 4, the organic light emitting display 100 according to the present invention includes a substrate 110, an organic electroluminescent unit 120, a passivation layer 130, and a cover 140 do.

The substrate 110 can be selected to have excellent mechanical strength and dimensional stability as a material for forming pixels.

As a material of the substrate 110, a glass plate, a metal plate, a ceramic plate, or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, Resin, etc.).

The substrate 110 may be flexible. The flexible substrate 110 may be used in a flexible electronic device.

The organic electroluminescent unit 120 is formed on the substrate 110 to display a screen and includes a plurality of pixels formed in a matrix form. Each pixel includes a driving thin film transistor and an organic light emitting diode (OLED).

The organic light emitting diode is a self-luminous element in which a light emitting layer is formed between two electrodes positioned on a substrate. Here, the organic light emitting display device may be a top emission type, a bottom emission type, or a dual emission type depending on a direction in which light is emitted. It is divided into a passive matrix and an active matrix depending on the driving method.

The active matrix type organic light emitting diode (AMOLED) includes a switching transistor, a driving transistor, a capacitor, an anode, an organic light emitting layer, and a cathode.

The organic emission layer includes an electron injection layer (EIL), an electron transport layer (ETL), an emission layer (EML), a hole transport layer (HTL), and a hole injection layer HIL). ≪ / RTI >

When driving voltage is applied to the anode electrode and the cathode electrode, holes passing through the hole transporting layer and electrons passing through the electron transporting layer move to the light emitting layer to form excitons, and as a result, the light emitting layer emits visible light.

The passivation layer 130 is formed on the organic electroluminescent portion 120 to protect the organic electroluminescent portion 120 from external moisture or oxygen. The protective layer 130 may be formed by a sputtering method.

The protective layer 130 includes at least one inorganic thin film 131 and at least one organic thin film 133. The inorganic thin film 131 and the organic thin film 133 may be stacked alternately alternately or the inorganic thin films 131 may be stacked one on top of the other, May be formed in an overlapping manner. The inorganic thin film 131 and the organic thin film 133 may be formed to have different thicknesses.

The inorganic thin film may be made of any one of silicon nitride (SiNx), silicon oxide (SiO2), and alumina (Al2O3), but is not limited thereto.

The organic thin film may be composed of any one of a monomer, a polymer, a polyimide (PI), and a polyamide (PA), but is not limited thereto.

4, the first inorganic thin film 131a, the first organic thin film 133a, the second inorganic thin film 131b, and the second organic thin film 133b are formed on the organic electroluminescent unit, The protective layer 130 is formed in this order, but the number of the deposited thin films is not limited thereto.

Meanwhile, the passivation layer 130 is formed to have the same area as the organic electroluminescent portion 120. Accordingly, the protective layer 130 is formed in a smaller area than the cover 140 to be formed on the upper surface of the protective layer 130.

The cover part 140 is formed on the organic electroluminescent part 120 to block the organic electroluminescent part 120 from the outside.

The cover 140 is formed on the protection layer 130 and includes a first contact member 141, a second contact member 143, and a protrusion member 145.

The first contact member 141 is formed in contact with the upper surface of the passivation layer 130 to block the upper portion of the passivation layer 130 from the outside.

The second contact member 143 is formed to extend from the first contact member 141 to shield the side surface of the protective layer 130 and the side surface of the organic electroluminescent portion 120 from the outside, 130 and the side surface of the organic electroluminescent portion 120. [0052]

The protruding member 145 is extended from the second contact member 143 to extend to the outside of the organic electroluminescent portion 120 to cut off the organic electroluminescent portion 120 from the outside, .

Unlike the conventional A region shown in FIG. 2, the protruding member 145 can be formed to have a small thickness, so that micro cracks do not occur due to external stress. That is, the resistance of the distal end of the inorganic thin film to external stress increases, thereby improving the adhesion between the microcrack and the substrate.

In addition, the end of the inorganic thin film has an effect of enhancing encapsulation as resistance to external stress is increased.

In addition, there is an effect that the deterioration of the organic light emitting diode can be delayed or prevented.

In addition, encapsulation is also enhanced when used in a flexible substrate.

The driver 150 is formed on one end of the substrate and applies a control signal to the driving thin film transistor or the like.

5 is a cross-sectional view of an organic light emitting display according to another embodiment of the present invention.

5, the organic light emitting display device 100 includes a substrate 110, an organic light emitting portion 120, a passivation layer 130, and a cover 140. As shown in FIG. A description overlapping with the foregoing description may be omitted.

The protective layer 130 is formed on the organic electroluminescent portion 120 and the first organic thin film 133a, the first inorganic thin film 131a, and the second organic thin film 133b are sequentially stacked. However, the number of laminated organic thin films and inorganic thin films is not limited thereto.

When the first organic thin film 133a is formed to be in contact with the organic electroluminescent unit 120, damage to the organic electroluminescent unit 120 due to plasma can be reduced.

6 and 7 are cross-sectional views illustrating a method for fabricating an organic light emitting display device according to the present invention.

First, as shown in FIG. 6, an organic electroluminescent unit in which an organic light emitting diode (OLED) including an organic light emitting layer is formed in a matrix form is formed on a substrate for manufacturing an organic light emitting display.

In detail, the thin film transistor and the organic light emitting diode are formed on the substrate 110.

The thin film transistor includes a buffer layer 111, a gate electrode 112, a first insulating film 113, an active layer 114, a source electrode 115a, a drain electrode 115b, a second insulating film 116, (117).

The buffer layer 111 may be formed on the substrate 110. The buffer layer 111 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as an alkali ion or the like flowing out from the substrate 110. The buffer layer 111 may be made of silicon oxide (SiO2), silicon nitride (SiNx), or the like.

The gate electrode 112 may be formed on the buffer layer 221. The gate electrode 112 is formed of a material selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper One or an alloy thereof.

The gate electrode 112 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, Or an alloy of any one selected from the above. In addition, the gate electrode 112 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating film 113 may be formed on the gate 222. The first insulating layer 113 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 114 may be formed on the first insulating film 113. The active layer 114 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities.

In addition, the active layer 114 may include an ohmic contact layer for lowering the contact resistance on the upper surface.

The source electrode 115a and the drain electrode 115b may be formed on the active layer 114. The source electrode 115a and the drain electrode 115b may be a single layer or a multilayer and the source electrode 115a (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) are used when the drain electrode 115a and the drain electrode 115b are a single layer. ), Or an alloy thereof.

When the source electrode 115a and the drain electrode 115b are multilayered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

The second insulating film 116 may be formed on the source electrode 115a and the drain electrode 115b. The second insulating film 116 may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto. The second insulating film 116 may be a passivation film.

The third insulating film 117 is formed on the second insulating film 116 and includes a predetermined opening. The third insulating film 117 may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto. The third insulating film 117 may be a planarizing film.

Next, an organic light emitting diode positioned on the thin film transistor will be described.

The organic light emitting diode includes a first electrode 121, a second electrode 125, a bank layer 122, and an organic light emitting layer 123.

The first electrode 121 may be formed on the third insulating layer 117. The first electrode 121 may be selected as an anode, and transparent ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) may be used, but the present invention is not limited thereto.

The bank layer 122 may be formed on the first electrode 121. The bank layer 122 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin. The bank layer 122 has openings on the first electrode 121.

The opening of the bank layer 122 has a constant area W that matches the size of the pixel. The area W of the opening of the bank layer 122 defines the area of the organic light emitting layer 123. [

The organic light emitting layer 123 may be formed in the opening of the bank layer 122. The organic light emitting layer 123 may be located on the first electrode 121 in the opening of the bank layer 122. At this time, a part of the organic light emitting layer 123 may be partially deposited on the bank layer 122 out of the openings of the bank layer 122 in the process of stacking.

The organic light emitting layer 123 may be formed to emit light of any one of red, green, and blue depending on the pixel.

The second electrode 125 may be formed on the organic light emitting layer 123. The second electrode 125 may be selected as a cathode and may be formed of a metal material such as aluminum (Al), calcium (Ca), magnesium (Mg), indium tin oxide (ITO), indium zinc oxide The same transparent material may be used.

Next, as shown in FIG. 7, a protective layer having the same area as the organic electroluminescent portion is formed on the organic electroluminescent portion.

In order to realize a large-area and flexible organic light emitting display device, it is difficult to apply a sheet-type getter generally used for removing oxygen and moisture from the outside, Encapsulate.

The protective layer 130 may be formed by blocking the organic light emitting layer 123 with moisture and oxygen outside, and laminating the inorganic thin film and the organic thin film into a plurality of layers.

Meanwhile, the passivation layer 130 is formed to have the same area as the organic electroluminescent portion 120. Accordingly, the protective layer 130 is formed in a smaller area than the cover 140 to be formed on the upper surface of the protective layer 130. By doing so, it is possible to prevent the projection member, which is the end of the cover portion 140, from being thickened.

7, the protective layer 130 includes a first inorganic thin film 131a, a first organic thin film 133a, a second inorganic thin film 131b, a second organic thin film 133b, a third inorganic thin film 131c, And the third organic thin film 133c are sequentially stacked, but the present invention is not limited thereto.

Next, a cover 140 is formed on the passivation layer 130 to block the organic electroluminescent portion from the outside. The cover 140 is formed of an inorganic thin film.

Although not shown, the cover 140 includes a protruding member formed on the organic electroluminescent unit to extend to the outside of the organic electroluminescent unit, and the protruding member is disposed on the organic electroluminescent unit, And is formed to be in contact with the substrate.

The cover 140 may include a first contact member contacting the upper surface of the passivation layer 130 and a second contact member contacting the side surface of the passivation layer 130 and the side surface of the organic electroluminescent portion. do.

It will be understood by those skilled in the art that the present invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and from the equivalent concept are to be construed as being included in the scope of the present invention .

100 - organic electroluminescent display device
110 - substrate
120 - Organic EL device
130 - protective layer
140 -
141 - first contact member
143 - second contact member
145 - projecting member

Claims (10)

Board;
An organic electroluminescent unit in which an organic light emitting diode (OLED) is formed in a matrix form on the substrate;
A cover part formed on the organic electroluminescent part and blocking the organic electroluminescent part from the outside; And
And a protective layer formed on the organic electroluminescent portion to be positioned inside the cover portion,
The cover portion
A protruding member formed on the organic electroluminescent unit to extend to the outside of the organic electroluminescent unit;
A first contact member contacting the upper surface of the protective layer; And
And a second contact member contacting the side surface of the protective layer and the side surface of the organic electroluminescent portion,
Wherein the protrusion member is formed to be in contact with the substrate so that the cover portion shields the organic electroluminescent portion from the outside. The method according to claim 1,
Wherein the protective layer is formed to have the same area as the organic electroluminescent portion. The method according to claim 1,
The organic light emitting diode includes:
A first electrode formed on the substrate and electrically connected to a source electrode of the thin film transistor;
A bank layer formed on the first electrode and having an opening;
An organic light emitting layer formed in the opening of the bank layer on the first electrode; And
And a second electrode formed on the organic light emitting layer,
And the cover portion is in contact with the upper surface and the side surface of the second electrode. 3. The method of claim 2,
Wherein the protective layer comprises a plurality of thin films including an inorganic thin film and an organic thin film. 5. The method of claim 4,
Wherein the inorganic thin film is made of any one of silicon nitride (SiNx), silicon oxide (SiO2), and alumina (Al2O3). 5. The method of claim 4,
Wherein the organic thin film comprises any one of a monomer, a polymer, a polyimide (PI), and a polyamide (PA). Forming an organic electroluminescent portion in which an organic light emitting diode (OLED) including an organic light emitting layer is formed in a matrix form on a substrate;
Forming a protective layer having the same area as the organic electroluminescent portion on the organic electroluminescent portion; And
And forming a cover portion formed on the protective layer and blocking the organic electroluminescent portion from the outside,
The cover portion
A protruding member formed on the organic electroluminescent unit to extend to the outside of the organic electroluminescent unit;
A first contact member contacting the upper surface of the protective layer; And
And a second contact member contacting the side surface of the protective layer and the side surface of the organic electroluminescent portion,
Wherein the protruding member is formed to be in contact with the substrate so that the cover portion shields the organic electroluminescent portion from the outside. delete 8. The method of claim 7,
Wherein the protective layer is formed by laminating an inorganic thin film and an organic thin film in a plurality of layers. 8. The method of claim 7,
Wherein the cover portion is formed of an inorganic thin film.

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