KR101870648B1 - Apparatus and Method for treating substrate - Google Patents

Abstract

The present invention provides an apparatus and a method for processing a substrate. The substrate processing apparatus includes a substrate supporting unit for supporting a substrate, a nozzle unit for supplying a liquid onto a substrate supported by the substrate supporting unit, and a liquid supply unit for supplying liquid to the nozzle unit, A positive charge supply line for supplying a liquid containing positive charges to the nozzle unit and a negative charge supply line for supplying a liquid containing negative charges to the nozzle unit, And a supply line. After the substrate is chemically treated, the substrate is treated with a liquid containing cations. As a result, the etching rate of the substrate can be improved.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to an apparatus and a method for liquid-treating a substrate.

To fabricate semiconductor devices or liquid crystal displays, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on the substrate. Among them, the etching process is a process for removing an unnecessary region from a thin film formed on a substrate, and a high selection ratio and a high etching rate are required for the thin film.

In general, a substrate processing step and a rinsing step are sequentially performed as a substrate etching step. In the chemical treatment step, a chemical for etching the thin film formed on the substrate is supplied to the substrate, and in the rinsing step, a rinsing liquid such as pure water is supplied onto the substrate.

In the chemical treatment step, a chemical heated to 100 ° C or higher is supplied onto the substrate. The etching rate differs depending on the temperature of the chemical. In a general etching process, the higher the temperature of the chemical, the higher the etching rate. Therefore, temperature compensation of the chemical is one of the ways to improve the etching rate.

However, the heat treated chemical decreases in temperature during feeding to the nozzle and during discharge from the nozzle. As a result, the etching rate for the thin film formed on the substrate is remarkably reduced.

Also, in the rinsing step, the chemical remaining on the substrate is removed. However, the particles generated in the chemical treatment step are not easily removed by the rinsing liquid and remain on the substrate.

The present invention provides an apparatus and a method for improving the etching rate of a thin film formed on a substrate.

It is another object of the present invention to provide an apparatus and a method for solving the problem that particles generated in a substrate etching process remain on a substrate.

An embodiment of the present invention provides an apparatus and a method for liquid-treating a substrate. The substrate processing apparatus includes a substrate supporting unit for supporting a substrate, a nozzle unit for supplying a liquid onto a substrate supported by the substrate supporting unit, and a liquid supply unit for supplying liquid to the nozzle unit, An ion generating member for generating a liquid including a positive charge and a liquid including a negative charge from the treatment liquid, a positive charge supply line for supplying a liquid containing positive charge to the nozzle unit, and a liquid containing negative charge to the nozzle unit And a negative charge supply line.

The substrate processing apparatus may further include a controller for controlling the liquid supply unit, wherein the controller includes: a chemical processing step of supplying a chemical to a substrate; a first ion-water treatment step of supplying a liquid containing positive- And a second ionized water treatment step of supplying a liquid containing ionized water to the substrate. The controller may perform a pre-wet process for supplying a liquid containing a positive charge or a negative charge to the substrate before the chemical treatment process. The controller may perform a rinsing process for supplying the process liquid to the substrate after the second ionized water process. The nozzle unit may further include a treatment liquid nozzle for discharging the treatment liquid, the liquid including the positive charge, and the liquid including the negative charge. Wherein the liquid supply unit further includes a treatment liquid supply line for connecting the treatment liquid supply source to the treatment liquid nozzle, wherein the ionized water producing member includes an intermediate chamber to which the treatment liquid is supplied, And a negative ion production chamber in which a liquid containing a negative charge is generated from the treatment liquid provided in the intermediate chamber, wherein the positive charge supply line is connected to the positive ion production chamber through the treatment liquid supply line And the negative charge supply line may connect the negative charge ionization chamber to the process liquid supply line.

A method for liquid processing a substrate includes a first chemical treatment step in which a first chemical nozzle supplies a first chemical on the substrate and an ionized water treatment step in which a treatment liquid nozzle supplies electrolytic ion water on the substrate, The ionized water includes a liquid containing a positive charge generated from the treatment liquid and a liquid containing a negative charge generated from the treatment liquid.

The ionized water treatment step includes a first ionized water treatment step of supplying one of liquid containing the positive charge and liquid containing the negative charge onto the substrate and a second ionized water treatment step of supplying the other one of the liquid containing the positive charge and the liquid containing the negative charge And a second ionized water treatment step of supplying the ionized water onto the substrate. The liquid containing the positive charge may be supplied to the substrate in the first ionized water treatment step and the liquid containing the negative charge may be supplied to the substrate in the second ionized water treatment step. And before the chemical treatment step, the treatment liquid nozzle may further include a pre-wet step of supplying a solution containing the positive charge or a solution containing the negative charge onto the substrate. And a first rinse treatment step of supplying a treatment liquid onto the substrate after the second ionized water treatment step. A second chemical processing step of supplying a second chemical onto the substrate after the rinsing step, and a second rinsing step of supplying the processing liquid onto the substrate by the processing liquid nozzle . A second chemical treatment step of supplying a second chemical onto the substrate; and a second chemical treatment step of supplying a second chemical onto the substrate, wherein the second chemical treatment step comprises: a first rinse treatment step of supplying a treatment liquid onto the substrate; And a second rinsing step of supplying the treatment liquid onto the substrate. The liquid processing to the substrate intended to process etching the thin film formed on said substrate, said thin film comprises a silicon nitride, and said first chemical comprises a phosphoric acid (H ₃ PO _4), the second chemical is hydrofluoric acid It may include (HF) and sulfuric acid (H ₂ SO _4).

A method of etching a thin film formed on a substrate includes a chemical processing step of supplying a chemical onto a substrate by a chemical nozzle to etch the thin film and an ionized water processing step of supplying electrolytic ionized water onto the substrate by the process liquid nozzle Wherein the ionized water treatment step includes a first ionized water treatment step of supplying a liquid containing a positive charge generated from the treatment liquid onto the substrate to improve the etching amount of the chemical or to etch the thin film, And a second ionized water treatment step of supplying a liquid containing an anion generated from the treatment liquid to prevent the particles generated in the chemical treatment step from reattaching to the substrate.

After the chemical treatment step, the first ionized water treatment step and the second ionized water treatment step may be sequentially performed. The method may further include a pre-wet step of supplying the liquid containing the positive charge or the liquid containing the negative charge onto the substrate before the chemical treatment step to clean the substrate.

According to the embodiment of the present invention, after the substrate is chemically treated, the substrate is treated with a liquid containing a cation. As a result, the etching rate of the substrate can be improved.

Further, according to the embodiment of the present invention, after the substrate is chemically treated, the substrate is treated with a liquid containing an anion. As a result, the cleaning rate of the particles remaining on the substrate can be improved.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a sectional view showing the substrate processing apparatus of FIG.
3 is a plan view showing the substrate processing apparatus of FIG. 2;
4 is a sectional view showing the liquid supply unit of Fig.
5 to 9 are views showing a process of processing a substrate using the liquid supply unit of FIG.
10 is a flow chart showing a process of processing a substrate using the substrate processing apparatus of FIG.
Fig. 11 is a cross-sectional view showing another embodiment of the treatment liquid nozzle of Fig. 4; Fig.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

In this embodiment, a process of liquid etching and etching the substrate will be described as an example. However, the present embodiment is not limited to the etching process, and can be variously applied to a substrate processing process using a liquid, such as a cleaning process, an ashing process, and a developing process. In this embodiment, a silicon nitride film (Si ₃ N ₄ ) formed on a substrate is etched with a chemical such as phosphoric acid (H ₃ PO ₄ ). However, the type of the thin film and the chemical of the substrate is not limited thereto.

Hereinafter, an example of the present invention will be described in detail with reference to FIGS. 1 to 11. FIG.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus 1 has an index module 10 and a processing module 20. The index module 10 has a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. The direction in which the load port 120, the transfer frame 140 and the processing module 20 are arranged is referred to as a first direction 12 and a direction perpendicular to the first direction 12 Direction is referred to as a second direction 14 and a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16. [

The carrier 130 in which the substrate W is accommodated is seated in the load port 140. A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14. The number of load ports 120 may increase or decrease depending on the process efficiency and footprint conditions of the process module 20 and the like. A plurality of slots (not shown) are formed in the carrier 130 for accommodating the substrates W horizontally with respect to the paper surface. As the carrier 130, a front opening unified pod (FOUP) may be used.

The process module 20 has a buffer unit 220, a transfer chamber 240, and a process chamber 260. The transfer chamber 240 is disposed such that its longitudinal direction is parallel to the first direction 12. Process chambers 260 are disposed on both sides of the transfer chamber 240, respectively. At one side and the other side of the transfer chamber 240, the process chambers 260 are provided to be symmetrical with respect to the transfer chamber 240. A plurality of process chambers 260 are provided at one side of the transfer chamber 240. Some of the process chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. In addition, some of the process chambers 260 are stacked together. That is, at one side of the transfer chamber 240, the process chambers 260 may be arranged in an array of A X B. Where A is the number of process chambers 260 provided in a row along the first direction 12 and B is the number of process chambers 260 provided in a row along the third direction 16. When four or six process chambers 260 are provided on one side of the transfer chamber 240, the process chambers 260 may be arranged in an array of 2 X 2 or 3 X 2. The number of process chambers 260 may increase or decrease. Unlike the above, the process chamber 260 may be provided only on one side of the transfer chamber 240. In addition, the process chamber 260 may be provided as a single layer on one side and on both sides of the transfer chamber 240.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space for the substrate W to stay before the transfer of the substrate W between the transfer chamber 240 and the transfer frame 140. [ In the buffer unit 220, a slot (not shown) in which the substrate W is placed is provided. A plurality of slots (not shown) are provided to be spaced along the third direction 16 from each other. The buffer unit 220 is opened on the side facing the transfer frame 140 and on the side facing the transfer chamber 240.

The transfer frame 140 transfers the substrate W between the buffer unit 220 and the carrier 130 that is seated on the load port 120. The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided so that its longitudinal direction is parallel to the second direction 14. The index robot 144 is installed on the index rail 142 and is linearly moved along the index rail 142 in the second direction 14. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed so as to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. Also, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward relative to the body 144b. A plurality of index arms 144c are provided and each is provided to be individually driven. The index arms 144c are stacked in a state of being spaced from each other along the third direction 16. Some of the index arms 144c are used to transfer the substrate W from the processing module 20 to the carrier 130 and another portion of the index arms 144c from the carrier 130 to the processing module 20, ). ≪ / RTI > This can prevent the particles generated from the substrate W before the process processing from adhering to the substrate W after the process processing in the process of loading and unloading the substrate W by the index robot 144. [

The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260 and between the process chambers 260. The transfer chamber 240 is provided with a guide rail 242 and a main robot 244. The guide rails 242 are arranged so that their longitudinal directions are parallel to the first direction 12. The main robot 244 is installed on the guide rails 242 and is linearly moved along the first direction 12 on the guide rails 242. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. Body 244b is also provided to be rotatable on base 244a. The main arm 244c is coupled to the body 244b, which is provided for forward and backward movement relative to the body 244b. A plurality of main arms 244c are provided and each is provided to be individually driven. The main arms 244c are stacked in a state of being spaced from each other along the third direction 16.

The process chamber 260 is provided with a substrate processing apparatus 300 that performs a cleaning process on the substrate W. The substrate processing apparatus 300 may have a different structure depending on the type of the cleaning process to be performed. Alternatively, the substrate processing apparatus 300 in each process chamber 260 may have the same structure. The process chambers 260 may be divided into a plurality of groups so that the substrate processing apparatuses 300 in the process chambers 260 belonging to the same group are identical to one another, The structures of the processing apparatus 300 may be provided differently from each other.

FIG. 2 is a sectional view showing the substrate processing apparatus of FIG. 1, and FIG. 3 is a plan view showing the substrate processing apparatus of FIG. 2 and 3, the substrate processing apparatus 300 includes a processing container 320, a spin head 340, a lift unit 360, nozzle units 380, 390 and 400, a liquid supply unit 410, 490).

The processing vessel 320 has a cylindrical shape with an open top. The processing vessel 320 has an inner recovery cylinder 322 and an outer recovery cylinder 326. [ Each of the recovery cylinders 322 and 326 recovers the different treatment liquids among the treatment liquids used in the process. The inner recovery cylinder 322 is provided in an annular ring shape surrounding the spin head 340 and the outer recovery cylinder 326 is provided in an annular ring shape surrounding the inner recovery cylinder 326. The inner space 322a of the inner recovery cylinder 322 and the inner recovery cylinder 322 function as a first inlet 322a through which the process liquid flows into the inner recovery cylinder 322. [ The space 326a between the inner recovery cylinder 322 and the outer recovery cylinder 326 functions as a second inlet 326a through which the process liquid flows into the outer recovery cylinder 326. [ According to one example, each inlet 322a, 326a may be positioned at a different height from each other. Collection lines 322b and 326b are connected under the bottom of each of the collection bins 322 and 326. The treatment liquids flowing into the respective recovery cylinders 322 and 326 can be supplied to an external treatment liquid regeneration system (not shown) through the recovery lines 322b and 326b and can be reused.

The spin head 340 supports the substrate W and rotates the substrate W during the process. The spin head 340 has a body 342, a support pin 344, a chuck pin 346, and a support shaft 348. The body 342 has a top surface that is generally circular when viewed from the top. A supporting shaft 348 rotatable by a driving unit 349 is fixedly coupled to the bottom surface of the body 342. [

A plurality of support pins 344 are provided. The support pins 344 are spaced apart from the edge of the upper surface of the body 342 and protrude upward from the body 342. The support pins 344 are arranged so as to have a generally annular ring shape in combination with each other. The support pins 344 support the rear edge of the substrate W such that the substrate W is spaced from the upper surface of the body 342 by a predetermined distance.

A plurality of the chuck pins 346 are provided. The chuck pin 346 is disposed farther away from the center of the body 342 than the support pin 344. The chuck pin 346 is provided to protrude upward from the body 342. The chuck pin 346 supports the side of the substrate W so that the substrate W is not laterally displaced in place when the spin head 340 is rotated. The chuck pin 346 is provided to allow linear movement between the standby position and the support position along the radial direction of the body 342. The standby position is a distance from the center of the body 342 relative to the support position. The chuck pin 346 is positioned in the standby position when the substrate W is loaded or unloaded onto the spin head 340 and the chuck pin 346 is positioned in the supporting position when the substrate W is being processed. At the support position, the chuck pin 346 contacts the side of the substrate W.

The elevating unit 360 moves the processing vessel 320 linearly in the vertical direction. As the processing vessel 320 is moved up and down, the relative height of the processing vessel 320 to the spin head 340 is changed. The lifting unit 360 has a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixed to the outer wall of the housing 320 and the bracket 362 is fixedly coupled to the moving shaft 364 which is moved up and down by the actuator 366. The housing 320 is lowered so that the spin head 340 protrudes to the upper portion of the housing 320 when the substrate W is placed on the spin head 340 or lifted from the spin head 340. When the process is performed, the height of the housing 320 is adjusted so that the treatment liquid can be introduced into the predetermined collection container 360 according to the type of the treatment liquid supplied to the substrate W. Alternatively, the lifting unit 360 can move the spin head 340 in the vertical direction.

The nozzle units 380, 390, and 400 eject various kinds of liquids. A plurality of nozzle units 380, 390, 400 are provided. According to one example, the nozzle units 380, 390, 400 include a first chemical unit 380, a second chemical unit 390, and a treatment liquid unit 400. The first chemical unit 380 discharges the first chemical. The first chemical unit 380 includes a rotary shaft 386, a driver 388, a support arm 382, and a chemical nozzle 389. The rotating shaft 386 is positioned on one side of the processing vessel. The rotary shaft 386 has a rod shape whose longitudinal direction faces the third direction. The rotary shaft 386 is rotatable by a driver 388. The rotary shaft 386 is rotatable about its central axis by a driving force provided from a driver 388.

The support arm 382 is connected to the chemical nozzle 389 and the rotary shaft 386. As the rotary shaft 386 rotates, the supporting arm 382 and the chemical nozzle 389 are rotated about the central axis of the rotary shaft 386. The support arm 382 is provided in a rod shape whose longitudinal direction is directed to the horizontal direction perpendicular to the third direction 16. One end of the support arm 382 is fixedly coupled to the upper end of the rotation shaft 386, and the chemical nozzle 389 is fixedly coupled to the other end. Therefore, the chemical nozzle 389 is moved to the process position and the standby position as the rotation shaft 386 and the support arm 382 are rotated. Where the process position is the position where the chemical nozzle is opposite the substrate W supported on the substrate support unit 340 and the standby position is the position where the chemical nozzle is out of the process position. For example, the first chemical can aekil of a strong acid such as phosphoric acid (H ₃ PO _4).

Since the second chemical unit 390 has the same shape as the first chemical unit 380, a detailed description of the second chemical unit 390 will be omitted. However, the second chemical unit 390 discharges a second chemical, which is different from the first chemical, unlike the first chemical unit 380. Therefore, in this embodiment, the chemical nozzle 389 for discharging the first chemical is defined as the first chemical nozzle 389, and the chemical nozzle 399 for discharging the second chemical is defined as the second chemical nozzle 399 . For example, the second chemical can aekil of a strong acid such as hydrofluoric acid (HF) and sulfuric acid (H ₂ SO _4).

Since the treatment liquid unit 400 has the same shape as the first chemical unit 380, a detailed description of the treatment liquid unit 400 will be omitted. Unlike the first chemical nozzle 389 of the first chemical unit 380, the treatment liquid unit 400 includes a treatment liquid nozzle 409 for discharging treatment liquid or electrolytic ion water. For example, the treatment liquid may be pure water (H ₂ O).

The liquid supply unit 410 supplies the liquid to the first chemical nozzle 389, the second chemical nozzle 399, and the process liquid nozzle 409. 4 is a sectional view showing the liquid supply unit of Fig. 4, the liquid supply unit 410 includes a first chemical supply line 412, a second chemical supply line 414, a process liquid supply line 420, a branch line 426, an ion generating member 440 ), A positive charge supply line 422, and a negative charge supply line 424.

The first chemical supply line 412 connects the first chemical source and the first chemical nozzle 389 to each other. The first chemical is supplied to the first chemical nozzle 389 through the first chemical supply line 412.

The second chemical supply line 414 connects the second chemical source and the second chemical nozzle 399 to each other. The second chemical is supplied to the second chemical nozzle 399 through the second chemical supply line 414.

The treatment liquid supply line 420 connects the treatment liquid supply source and the treatment liquid nozzle 409 to each other. The treatment liquid is supplied to the treatment liquid nozzle 409 through the treatment liquid supply line 420. The branch line 426 is provided as a line that branches from the process liquid supply line 420. The branch line 426 branches from the treatment liquid supply line 420 and is connected to the ionized water producing member 440.

The ionized water producing member 440 generates electrolytic ionized water from the treatment liquid. The ionized water producing member 440 generates a liquid containing positive charges (hereinafter, positive ionized water) and a liquid containing negative charges (hereinafter, negative charged ionized water) from the treatment liquid. The ionized water producing member 440 includes a housing 442, a plate plate 446, a first electrode 444a, a second electrode 444b, and an electrolyte supply source 448.

The housing 442 provides a space in which the processing solution is electrolyzed. The housing 442 has a cylindrical shape. The housing 442 is formed with a plurality of spaces in which positive and negative ionized water are respectively generated. The inner space of the housing 442 is partitioned into a plurality of spaces by the plate plate 446. The plate plate 446 has a plate shape in which a plurality of holes are formed. Thus, each compartment space is provided to communicate with each other through the holes. The plate plates 446 are provided in a plurality of and are arranged along a direction perpendicular to the longitudinal direction of the housing 442. According to one example, the plate plate 446 may be arranged in the horizontal direction. The plate plate 446 is provided in two, and the inner space of the housing 442 can be divided into three compartment spaces. Three compartment spaces may be provided to the intermediate chamber 442a, the negative ionizing water producing chamber 442c, and the positive ionizing water producing chamber 442b. The intermediate chamber 442a is positioned between the negative ionizing water producing chamber 442c and the positive ionizing water producing chamber 442b. The negative ionized water producing chamber 442c may be located at one side of the intermediate chamber 442a and the positive charged ionized water producing chamber 442b may be located at the other side of the intermediate chamber 442a. A branch line 426 is connected to each of the negative ionized water producing chamber 442c and the positive ionized water producing chamber 442b to supply the treatment liquid.

The first electrode 444a is located in the negative ionized water producing chamber 442c and the second electrode 444b is located in the positive ionized water producing chamber 442b. The first electrode 444a is provided as an electrode to which a negative voltage is applied, and the second electrode 444b is provided to an electrode to which a voltage is applied. The position of the first electrode 444a is fixed in the negative ionized water production chamber 442c and the position of the second electrode 444b is fixed in the positive ionized water production chamber 442b.

The electrolyte supply source 448 supplies the electrolyte solution to the intermediate chamber 442a. For example, the electrolyte solution may be ammonia (NH ₃ ), sulfuric acid (H ₂ SO ₄ ), and hydrochloric acid (HCl).

The positive charge supply line 422 connects the positive charge ionization chamber 442b to the process liquid supply line 420. [ The point where the positive charge supply line 422 is connected to the process liquid supply line 420 may be downstream of the branch point of the branch line 426. The positive ionized water generated from the positive ionized water producing chamber 442b is supplied to the process liquid nozzle 409 through the positive charge supply line 422 and the process liquid supply line 420 in sequence.

The negative charge supply line 424 connects the negative charge ionization chamber 442c to the process liquid supply line 420. The point where the negative charge supply line 424 is connected to the process liquid supply line 420 may be downstream of the branch point of the branch line 426. [ The negative ionized water generated from the negative ionized water producing chamber 442c is supplied to the treatment liquid nozzle 409 through the negative charge supply line 424 and the treatment liquid supply line 420 in sequence.

The controller 490 controls the valves provided in the first chemical supply line 412, the second chemical supply line 414, the process liquid supply line 420, the positive charge supply line 422 and the negative charge supply line 424 . The controller 490 performs the prewetting process, the first chemical treatment process, the first ionized water treatment process, the second ionized water treatment process, the first rinsing process, the second chemical treatment process, and the second rinsing process sequentially Valves.

Next, a process of generating electrolytic ion water from pure water by the ionized water generating member 440 will be described. In this embodiment, ammonium hydroxide (NH ₄ OH) is used as an electrolyte solution. The intermediate chamber (442a), the ammonium hydroxide (NH ₄ OH) and treatment liquid (H ₂ O) is supplied, positively charged ionized water generation chamber (442b) and a negatively charged ion water generation chamber (442c), the treatment liquid (H ₂ O), respectively . Hydrogen ions (H ⁺ ) and ammonium ions (NH ₄ ⁺ ), which are cations of ammonium hydroxide (NH ₄ OH), are negatively charged by the first electrode 444a to which a negative voltage is applied in the intermediate chamber 442a, . The hydrogen ions (H ⁺ ) are supplied with electrons by the first electrode 444a and reduced to hydrogen (H ₂ ). As a result, the hydrogen ion (H ⁺ ) is reduced and the hydroxide ion (OH ^- ) remains in the negative ionized water producing chamber 442c to produce a negative ionized water having a basic property.

Further, the negative ions moved to the positive ionized water producing chamber 442b are oxidized by water and oxygen while the electrons are taken by the second electrode 444b. As a result, the amount of positive hydrogen ions (H ⁺ ) increases in the positive ionized water producing chamber 442b relative to the negatively charged hydroxide ions (OH ^- ), resulting in positive ionized water having acidic properties.

Next, a process of etching the substrate using the above-described substrate processing apparatus 300 will be described. FIGS. 5 to 9 are views showing a process of processing a substrate using the liquid supply unit of FIG. 2, and FIG. 10 is a flowchart illustrating a process of processing a substrate using the substrate processing apparatus of FIG. Referring to FIGS. 5 to 10, the etching process sequentially performs the pre-wet process, the first chemical process, the ionized water process, the first rinse liquid process, the second chemical process, and the second rinse liquid process do

When the pre-wet step proceeds, the process liquid nozzle 409 is moved to the process position. The treatment liquid nozzle 409 supplies a positive ionized water or a negatively charged ionized water onto the substrate W. The electrolytic ionized water supplied onto the substrate W converts the substrate W into a wet state. When the prewetting step is completed, the first chemical processing step proceeds.

In the first chemical treatment step, the first chemical nozzle 389 is moved to the process position, and the first chemical is supplied onto the substrate W. The first chemical etches the thin film formed on the substrate (W). When the first chemical treatment step is completed, the ionized water treatment step proceeds.

The ionized water treatment step includes a positive ionized water treatment step and a negative ionized water treatment step. The positive ionized water treatment step and the negative ionized water treatment step are sequentially performed. As the positive ionized water treatment step proceeds, the treatment liquid nozzle 409 supplies positive ionized water onto the substrate W. The positive ionized water mixes with the first chemical remaining on the substrate W to improve the etch rate of the first chemical. Further, the positive ionized water can etch the thin film of the substrate W. [ Thereafter, when the negative ionized water treatment step proceeds, the treatment liquid nozzle 409 supplies the negative ionized water onto the substrate W. [ The negatively charged ionized water prevents the particles from the substrate W from reattaching. Negative ions (-) of the negative ionized water cause a repulsive force between the particle and the substrate (W) to prevent reattachment. When the negative ionized water treatment step is completed, the first rinsing liquid processing step proceeds.

As the first rinsing liquid processing step proceeds, the processing liquid nozzle 409 supplies the processing liquid onto the substrate W. The rinsing liquid cleans the chemical and ionized water remaining on the substrate (W). When the first rinsing liquid processing step is completed, the second chemical processing step proceeds.

As the second chemical treatment step proceeds, the second chemical nozzle 399 is moved to the process position and supplies the second chemical onto the substrate W. The second chemical removes the process by-products that remain on the substrate (W). For example, the process by-products may be metal and photoresist provided as particles during the first chemical treatment step. When the second chemical treatment step is completed, the second rinse treatment step proceeds.

When the second rinsing step is performed, the process liquid nozzle 409 is moved to the process position, and the process liquid is supplied onto the substrate W. The treatment liquid cleans the second chemical remaining on the substrate (W).

In the above-described embodiment, the ionized water treatment step is described as including a positive ionized water treatment step and a negative ionized water treatment step. However, the ionized water treatment step may include only one of the positive ionized water treatment step and the negative ionized water treatment step.

Further, in the above-described embodiment, each of the substrate processing apparatuses is described as including the ion generating member 440. [ However, the ionized water generating member 440 may supply the treatment liquid, the positive ionized water, and the negative ionized water to each of the treatment liquid nozzles 409 provided in the substrate processing facility 1.

Also, in the above-described embodiment, it has been described that the positive ionized water or the negatively charged ionized water is supplied onto the substrate W in the prewet step. This allows the operator to selectively supply the positive and negative ionized water according to the state of the substrate W. [ For example, if it is determined that the cleaning state of the substrate W is poor, the operator can supply negative ionized water onto the substrate W in the prewet step.

The positive charge supply line 422 and the negative charge supply line 424 are connected to the treatment liquid supply line 420 so that the positive ionized water and the negatively charged ionized water flow through the treatment liquid supply line 420 to the treatment liquid nozzle 409 ). However, the positive charge supply line 422 and the negative charge supply line 424 may connect the ion generating member 440 directly to the process liquid nozzle 409. [ Fig. 11 is a cross-sectional view showing another embodiment of the treatment liquid nozzle of Fig. 4; Fig. Referring to Fig. 11, the treatment liquid nozzle 409 may be formed with a first discharge port communicating with the first flow path, a second discharge port communicating with the second flow path, and a third discharge port communicating with the third flow path. Each of the flow paths may be provided as a flow path independent of each other. The first flow path may be connected to the treatment liquid supply line 420, the second flow path may be connected to the positive charge supply line 422, and the third flow path may be connected to the negative charge supply line 424.

389: first chemical nozzle 399: second chemical nozzle
409: Treatment liquid nozzle 410: Liquid supply unit
422: positive charge supply line 424: negative charge supply line
440: ionized water producing member

Claims (17)

delete delete delete delete delete delete A method for liquid processing a substrate,
A first chemical processing step in which a first chemical nozzle supplies a first chemical onto the substrate;
An ionized water treatment step in which a treatment liquid nozzle supplies electrolytic ionized water onto the substrate after the first chemical treatment step;
A first rinse treatment step of supplying the treatment liquid onto the substrate by the treatment liquid nozzle after the ionized water treatment step;
A second chemical processing step in which, after the first rinse processing step, a second chemical nozzle supplies a second chemical different from the first chemical onto the substrate;
And a second rinsing treatment step in which, after the second chemical treatment step, the treatment liquid nozzle supplies the treatment liquid onto the substrate,
Wherein the ionized water treatment step comprises:
A first ionized water processing step of supplying a liquid containing a positive charge onto the substrate;
And a second ionized water treatment step of supplying a liquid containing a negative charge onto the substrate after the first ionized water treatment step,
Wherein the liquid containing the positive charge and the liquid containing the negative charge are respectively generated from the treatment liquid,
Wherein the treatment liquid comprises pure water. delete delete 8. The method of claim 7,
Wherein the process liquid nozzle supplies a liquid containing the positive charge or a liquid containing the negative charge onto the substrate prior to the first chemical processing step. delete delete delete 8. The method of claim 7,
The liquid processing of the substrate is to etch the thin film formed on the substrate,
Wherein the thin film comprises silicon nitride,
It said first chemical comprises a phosphoric acid (H ₃ PO _4),
The second chemical is a substrate processing method including a hydrofluoric acid (HF) and sulfuric acid (H ₂ SO _4).


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