KR101835654B1 - 플라즈마 프로세싱 장치 및 시스템 및 이온 빔을 제어하는 방법 - Google Patents

플라즈마 프로세싱 장치 및 시스템 및 이온 빔을 제어하는 방법 Download PDF

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KR101835654B1
KR101835654B1 KR1020177009398A KR20177009398A KR101835654B1 KR 101835654 B1 KR101835654 B1 KR 101835654B1 KR 1020177009398 A KR1020177009398 A KR 1020177009398A KR 20177009398 A KR20177009398 A KR 20177009398A KR 101835654 B1 KR101835654 B1 KR 101835654B1
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South Korea
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hidden
ion beam
electrode
extraction plate
deflection electrode
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Korean (ko)
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KR20170052638A (ko
Inventor
코스텔 빌뢰우
피터 에프. 쿠룬지
테일러 락웰
크리스토퍼 캠벨
비크람 싱
스베틀라나 라도파노프
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H01J27/024—Extraction optics, e.g. grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR1020177009398A 2014-09-10 2015-08-28 플라즈마 프로세싱 장치 및 시스템 및 이온 빔을 제어하는 방법 Active KR101835654B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462048584P 2014-09-10 2014-09-10
US62/048,584 2014-09-10
US14/523,428 2014-10-24
US14/523,428 US9514912B2 (en) 2014-09-10 2014-10-24 Control of ion angular distribution of ion beams with hidden deflection electrode
PCT/US2015/047356 WO2016040006A1 (en) 2014-09-10 2015-08-28 Control of ion angular distribution of ion beams with hidden deflection electrode

Publications (2)

Publication Number Publication Date
KR20170052638A KR20170052638A (ko) 2017-05-12
KR101835654B1 true KR101835654B1 (ko) 2018-03-07

Family

ID=55438149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177009398A Active KR101835654B1 (ko) 2014-09-10 2015-08-28 플라즈마 프로세싱 장치 및 시스템 및 이온 빔을 제어하는 방법

Country Status (6)

Country Link
US (1) US9514912B2 (https=)
JP (1) JP6769952B2 (https=)
KR (1) KR101835654B1 (https=)
CN (1) CN107078010B (https=)
TW (1) TWI614790B (https=)
WO (1) WO2016040006A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6388520B2 (ja) * 2014-10-17 2018-09-12 住友重機械イオンテクノロジー株式会社 ビーム引出スリット構造、イオン源、及びイオン注入装置
US9478399B2 (en) 2015-03-27 2016-10-25 Varian Semiconductor Equipment Associates, Inc. Multi-aperture extraction system for angled ion beam
DE102016119437B4 (de) * 2016-10-12 2024-05-23 scia Systems GmbH Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls
KR102673632B1 (ko) 2016-12-06 2024-06-13 삼성전자주식회사 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법
US9865433B1 (en) * 2016-12-19 2018-01-09 Varian Semiconductor Equipment Associats, Inc. Gas injection system for ion beam device
US10074514B1 (en) * 2017-09-08 2018-09-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for improved ion beam current
US10276340B1 (en) * 2017-12-20 2019-04-30 Varian Semiconductor Equipment Associates, Inc. Low particle capacitively coupled components for workpiece processing
US10325752B1 (en) * 2018-03-27 2019-06-18 Varian Semiconductor Equipment Associates, Inc. Performance extraction set
US10468226B1 (en) * 2018-09-21 2019-11-05 Varian Semiconductor Equipment Associates, Inc. Extraction apparatus and system for high throughput ion beam processing
US10886098B2 (en) * 2018-11-20 2021-01-05 Applied Materials, Inc. Electrostatic filter and ion implanter having asymmetric electrostatic configuration
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) * 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
US11056319B2 (en) * 2019-07-29 2021-07-06 Applied Materials, Inc. Apparatus and system having extraction assembly for wide angle ion beam
US11791126B2 (en) 2019-08-27 2023-10-17 Applied Materials, Inc. Apparatus for directional processing
US11270864B2 (en) * 2020-03-24 2022-03-08 Applied Materials, Inc. Apparatus and system including extraction optics having movable blockers
US11948781B2 (en) * 2020-06-16 2024-04-02 Applied Materials, Inc. Apparatus and system including high angle extraction optics
US11495430B2 (en) * 2020-07-15 2022-11-08 Applied Materials, Inc. Tunable extraction assembly for wide angle ion beam
US11361935B2 (en) 2020-11-07 2022-06-14 Applied Materials, Inc. Apparatus and system including high angle extraction optics
EP4434073A1 (en) 2021-11-19 2024-09-25 DH Technologies Development Pte. Ltd. Method for noise reduction and ion rate estimation using an analog detection system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211921A1 (en) 2002-10-30 2005-09-29 Wieland Marco J Electron beam exposure system
US20110011534A1 (en) 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
US20110079355A1 (en) 2007-03-29 2011-04-07 Tokyo Electron Limited Control of ion angular distribution function at wafer surface
US20110186749A1 (en) 2009-04-03 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Ion source
US20140001372A1 (en) 2012-06-29 2014-01-02 Fei Company Multi Species Ion Source

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02158042A (ja) * 1988-12-09 1990-06-18 Fuji Electric Co Ltd イオン源装置
JPH02253548A (ja) * 1989-03-28 1990-10-12 Nippon Seiko Kk ガスイオン源及びガスイオン源を用いたイオンビーム加工装置
WO2008000836A2 (en) * 2006-06-30 2008-01-03 Nordiko Technical Services Limited Apparatus for accelerating an ion beam
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US8089052B2 (en) * 2008-04-24 2012-01-03 Axcelis Technologies, Inc. Ion source with adjustable aperture
US7767977B1 (en) * 2009-04-03 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source
JP5216918B2 (ja) * 2009-07-16 2013-06-19 キヤノンアネルバ株式会社 イオンビーム発生装置、基板処理装置及び電子デバイスの製造方法
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces
US8288741B1 (en) * 2011-08-16 2012-10-16 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for three dimensional ion processing
JP2013098003A (ja) * 2011-10-31 2013-05-20 Nissin Ion Equipment Co Ltd イオンビーム引出し用電極およびこれを備えたイオン源
US9437392B2 (en) * 2011-11-02 2016-09-06 Varian Semiconductor Equipment Associates, Inc. High-throughput ion implanter
US8497486B1 (en) * 2012-10-15 2013-07-30 Varian Semiconductor Equipment Associates, Inc. Ion source having a shutter assembly
US9293301B2 (en) * 2013-12-23 2016-03-22 Varian Semiconductor Equipment Associates, Inc. In situ control of ion angular distribution in a processing apparatus
US9514918B2 (en) * 2014-09-30 2016-12-06 Applied Materials, Inc. Guard aperture to control ion angular distribution in plasma processing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211921A1 (en) 2002-10-30 2005-09-29 Wieland Marco J Electron beam exposure system
US20110079355A1 (en) 2007-03-29 2011-04-07 Tokyo Electron Limited Control of ion angular distribution function at wafer surface
US20110186749A1 (en) 2009-04-03 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Ion source
US20110011534A1 (en) 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
US20140001372A1 (en) 2012-06-29 2014-01-02 Fei Company Multi Species Ion Source

Also Published As

Publication number Publication date
TW201611083A (zh) 2016-03-16
US9514912B2 (en) 2016-12-06
KR20170052638A (ko) 2017-05-12
CN107078010B (zh) 2019-04-05
WO2016040006A1 (en) 2016-03-17
TWI614790B (zh) 2018-02-11
US20160071693A1 (en) 2016-03-10
CN107078010A (zh) 2017-08-18
JP2017533542A (ja) 2017-11-09
JP6769952B2 (ja) 2020-10-14

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