KR101832561B1 - Resonator package and method for manufacturing the same - Google Patents
Resonator package and method for manufacturing the same Download PDFInfo
- Publication number
- KR101832561B1 KR101832561B1 KR1020150126960A KR20150126960A KR101832561B1 KR 101832561 B1 KR101832561 B1 KR 101832561B1 KR 1020150126960 A KR1020150126960 A KR 1020150126960A KR 20150126960 A KR20150126960 A KR 20150126960A KR 101832561 B1 KR101832561 B1 KR 101832561B1
- Authority
- KR
- South Korea
- Prior art keywords
- lower electrode
- hard mask
- etching
- electrode
- etching step
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 103
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/178—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
A method of fabricating a resonator package according to an embodiment of the present invention may include etching a lower electrode by a hard mask, wherein the lower electrode is etched only in a part of its thickness in at least one step.
In another aspect of the present invention, there is provided a resonator package comprising: a lower electrode provided on a second surface of a piezoelectric layer having an insulating layer on one surface thereof and formed at least in a portion different from a thickness of the piezoelectric layer; A dielectric layer provided on the other surface of the lower electrode, and an upper electrode provided on the other surface of the dielectric layer provided with the lower electrode on one surface.
Description
The present invention relates to a resonator package and a method of manufacturing the same.
BACKGROUND ART [0002] With the recent rapid development of mobile communication devices, demands for ultra-small filters, oscillators and the like are increasing. A bulk acoustic wave (BAW) resonator is known as a means for implementing such a micro filter and an oscillator.
Such a bulk acoustic resonator is advantageous in that it can be mass-produced at a low cost and can be implemented in a very small size. In addition, a high quality factor, which is a main characteristic of the filter, can be obtained, and the filter can be used in a microwave frequency band.
In constructing the filter with the bulk acoustic resonator, a capacitor structure is often included in a chip in a circuit.
Here, the resonator is composed of a lower electrode, a piezoelectric layer and an upper electrode, and a capacitor is composed of a lower electrode, a dielectric layer, and an upper electrode. In order to simplify the process and reduce the material, the upper electrode of the resonator and the lower electrode of the capacitor The same material and the same process.
1 to 4, the upper electrode 10 ', the
In order to secure the crystallinity of the
Conventionally, since the
Accordingly, the coverage of the dielectric layer 30 'formed on the upper surface of the
The present invention provides a resonator package capable of preventing a short circuit between an upper electrode and a lower electrode of a capacitor and a problem of poor coverage of the upper electrode and a method of manufacturing the resonator package.
The method of fabricating a resonator package according to an embodiment of the present invention is characterized in that the lower electrode is etched by a hard mask while only a part of the thickness of the lower electrode is etched during formation of the lower electrode.
In other words, the method of manufacturing a resonator package according to an embodiment of the present invention includes a hard mask first etching step for performing a first etching for a hard mask provided on one surface of a lower electrode, a hard mask first etching step after the hard mask first etching step A lower electrode first etching step of performing a first etching on the lower electrode using the etched hard mask and etching only a part of the entire thickness of the lower electrode, a first etching step of etching the lower electrode first etching step after the lower electrode first etching step, A hard mask second etching step for performing a second etching for the hard mask and a second etching for the lower electrode subjected to the first etching using the hard mask secondarily etched after the hard mask second etching step May include a lower electrode second etching step.
In another aspect of the present invention, there is provided a resonator package comprising: a lower electrode provided on a second surface of a piezoelectric layer having an insulating layer on one surface thereof and formed at least in a portion different from a thickness of the piezoelectric layer; A dielectric layer provided on the other surface of the lower electrode, and an upper electrode provided on the other surface of the dielectric layer provided with the lower electrode on one surface.
Here, the lower electrode may have at least one of a stepped step and a regular slanted surface at one end thereof.
The resonator package of the present invention and its manufacturing method have an advantage of preventing a short circuit between an upper electrode and a lower electrode serving as capacitors.
In addition, there is an advantage that the coverage failure of the upper electrode can be prevented.
FIGS. 1 to 3 are photographs of a conventional resonator package, showing a short defect between the upper electrode and the lower electrode, and a poor coverage of the upper electrode.
4 shows a conventional method of manufacturing a resonator package.
5 is a view showing a method of manufacturing a resonator package of the present invention.
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventive concept. Other embodiments falling within the scope of the inventive concept may readily be suggested, but are also considered to be within the scope of the present invention.
The same reference numerals are used to designate the same components in the same reference numerals in the drawings of the embodiments.
The resonator package of the present invention and its manufacturing method have been proposed to prevent a problem that a short between the
Specifically, the resonator package of the present invention includes a
In addition, the
In other words, the resonator package according to an embodiment of the present invention includes an
Here, the
The
Particularly, since the
Accordingly, it is possible to prevent the coverage failure (Cf) of the
In other words, as shown in FIGS. 1 to 4, since the conventional resonator package is patterned by the single dry etching using the hard mask HM, the
That is, the gas G2 for etching the
This forms a discontinuous portion in the formation of the dielectric layer 30 'on the upper surface of the
Accordingly, the upper electrode 10 'is formed discontinuously even when the upper electrode 10' is formed on the upper surface of the dielectric layer 30 ', so that the
However, according to the present invention, it is possible to prevent a reverse slope from being formed in the
The
As another form of the
The
On the other hand, the
The
The resonator package manufacturing method of the present invention is characterized in that the
In addition, the method of manufacturing a resonator package of the present invention may be characterized in that the etching of the
Specifically, referring to FIG. 5, the resonator package manufacturing method of the present invention includes a hard mask (HM) first etching step (see FIG. 5) for performing a primary etching on the hard mask HM provided on one surface of the
As described above, the method of manufacturing the resonator package of the present invention is a method of patterning the
Here, in the present invention, the etching of the
That is, according to the conventional technique, the gas G2 for etching the
In order to implement the resonator package manufacturing method of the present invention, a preparation step including a hard mask (HM), a
Thereafter, a hard mask (HM) first etching step for patterning the hard mask HM using a first etching gas G1 is performed on the
That is, since the hard mask HM can be patterned by etching with the soft mask SM, the hard mask HM is first patterned, and then the hard mask HM is patterned using the patterned hard mask HM. The
In other words, the hard mask (HM) first etching step of the resonator package manufacturing method of the present invention is performed by patterning the hard mask HM by a pattern of a soft mask SM provided on the hard mask HM .
Particularly, the present invention provides patterning of the
The first etching gas G1 etches only the hard mask HM, and the
In other words, the hard mask (HM) first etching step of the method of manufacturing a resonator package of the present invention is characterized in that the
Meanwhile, a first etching step is performed on the
That is, the first etching step of the
In the first etching step of the
This is to induce the shape of a normal slope (NS) in order to prevent a reverse slope (RS) from being formed in the
This first etching step of the
After the first etching step of the
That is, a soft mask SM is provided on one side of the hard mask HM, and a second etching is performed on the hard mask HM by spraying a first etching gas G1.
In other words, the hard mask (HM) second etching step of the method of manufacturing a resonator package of the present invention is characterized in that the
Here, the second hard mask (HM) second etching step may be characterized in that the second hard mask HM is patterned by a pattern of a soft mask SM provided on the hard mask HM .
The first etching step of the
Next, when the second etching of the hard mask HM is completed, the
That is, the second etching step of the
This second etching step of the
Then, a step of forming a
A step of forming an
The manufacture of the resonator package in this way prevents shorts (S) between the
In other words, when the resonator package was fabricated by the above-described method and the result of the electrostatic discharge (ESD) test was confirmed, when the conventional method was used, the defect due to the short (S) occurred at about 50% After the improvement by the method of the present invention, it was proved that a remarkable effect was obtained by issuing only about 1% of the shot (S) even at a higher voltage of 500 V.
10: upper electrode 20: lower electrode
30: dielectric layer 40: piezoelectric layer
50: insulation layer SM: soft mask
HM: Hard mask G1, G2: Etching gas
Claims (13)
Forming a lower electrode on the piezoelectric layer;
Forming a dielectric layer to cover the lower electrode; And
Forming an upper electrode on the dielectric layer so as to be disposed on the lower electrode;
/ RTI >
Wherein the forming of the lower electrode comprises etching a portion of the lower electrode so that the thickness of the lower electrode is stepped differently than the thickness of the other portions.
Wherein the etching of the lower electrode is formed by etching in at least two stages by a hard mask patterned into at least two shapes.
A hard mask first etching step for performing a first etching for the hard mask provided on one surface of the lower electrode;
A lower electrode first etching step of performing a first etching on the lower electrode using the hard mask that is firstly etched after the hard mask first etching step, but etching only a part of the entire thickness of the lower electrode;
A hard mask second etching step of performing a second etching on the hard mask subjected to the first etching after the lower electrode first etching step; And
A lower electrode second etching step of performing a second etching on the lower electrode subjected to the first etching using the hard mask secondarily etched after the hard mask second etching step;
Gt; a < / RTI > resonator package.
Wherein the hard mask first etching step and the hard mask second etching step pattern the hard mask by a pattern of a soft mask provided on the hard mask.
A lower electrode formed on the piezoelectric layer and formed to be stepped differently from a thickness of a portion of the piezoelectric layer;
A dielectric layer formed to cover the lower electrode; And
An upper electrode formed on the dielectric layer so as to be disposed on the lower electrode;
≪ / RTI >
Wherein the lower electrode has a regular slope at one end.
At least one capacitor located outside the acoustic resonator;
Lt; / RTI >
The capacitor
A lower electrode formed to have a stepped portion;
A dielectric layer located above the lower electrode to cover the step; And
An upper electrode positioned above the dielectric layer;
≪ / RTI >
And the lower electrode is located on top of the piezoelectric layer.
And an insulating layer located under the piezoelectric layer.
And the lower electrode extends from the first electrode disposed on the piezoelectric layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/058,713 US10367471B2 (en) | 2015-05-21 | 2016-03-02 | Resonator package and method of manufacturing the same |
| CN201610168833.8A CN106169916B (en) | 2015-05-21 | 2016-03-23 | Resonator package and method of manufacturing the same |
| US16/292,715 US20190199319A1 (en) | 2015-05-21 | 2019-03-05 | Resonator package and method of manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150070825 | 2015-05-21 | ||
| KR20150070825 | 2015-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160137309A KR20160137309A (en) | 2016-11-30 |
| KR101832561B1 true KR101832561B1 (en) | 2018-02-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150126960A KR101832561B1 (en) | 2015-05-21 | 2015-09-08 | Resonator package and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101832561B1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003519919A (en) * | 2000-01-07 | 2003-06-24 | セイコーエプソン株式会社 | Method for manufacturing thin film transistor |
| JP2010041051A (en) * | 2008-08-06 | 2010-02-18 | Tokyo Electron Ltd | Method for utilizing multilayer/multi-input/multi-output (mlmimo) model to metal gate structure |
-
2015
- 2015-09-08 KR KR1020150126960A patent/KR101832561B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003519919A (en) * | 2000-01-07 | 2003-06-24 | セイコーエプソン株式会社 | Method for manufacturing thin film transistor |
| JP2010041051A (en) * | 2008-08-06 | 2010-02-18 | Tokyo Electron Ltd | Method for utilizing multilayer/multi-input/multi-output (mlmimo) model to metal gate structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160137309A (en) | 2016-11-30 |
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