KR101831735B1 - Apparatus for aligning a substrate for laser lift off - Google Patents

Abstract

A substrate alignment apparatus for a laser lift-off is disclosed. The first photographing unit photographs the first photographing region of the substrate to be laser-processed and outputs a first image of the first resolution. The second photographing section photographs the second photographing region of the substrate and outputs a second image of the second resolution. The third photographing unit photographs the third photographing region of the substrate and outputs a third image of the third resolution. The alignment unit performs a first detection process of detecting a recognition mark from a substrate rotated within a predetermined angle range after the substrate is transferred from the start position to the image pickup region of the third image pickup unit, A first image obtained by transferring a substrate to an imaging region of a first camera and a second camera when a recognition mark is not detected in a first detection process, Detecting a recognition mark on the substrate from the second image and then transferring the substrate to an image pickup area of the third camera to perform a first detection process to determine a feed amount and a rotation amount of the substrate based on the start position, Lt; RTI ID = 0.0 > lasers < / RTI > According to the present invention, cooling of a substrate on which a laser lift-off process is completed and application of a new laser lift-off process can be performed at the same time, so that heat generated during the process is sequentially cooled to prevent damage to the substrate due to thermal stress The treatment yield can be improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate aligning apparatus for a laser lift-

The present invention relates to a substrate aligning apparatus for laser lift-off, and more particularly, to a substrate aligning apparatus for laser lift-off for separating a substrate and a thin film grown on the substrate.

In recent years, demand for high-power LEDs, such as LCD backlight units, automotive headlights, and household and industrial lighting, has increased, and the company has focused on mass production of vertical LEDs in horizontal LEDs. A lift-off process is emerging as an important issue. Such a lift-off process is a process for removing a sapphire substrate after a GaN thin film is grown on a sapphire substrate, and various methods such as chemical lift-off and laser lift-off have been studied. Now, considering the process stability and productivity, Laser Lift Off (LLO) is widely used.

In addition, as the stability and power of the Eximaer laser beam have been improved in recent years, the range of use of the laser lift-off has been extended to the process of processing various semiconductor materials. Particularly, a process of separating a thin film on a substrate by using a laser beam is widely used to form a device such as a vertical light emitting diode (LED) and a flexible display for high output.

Semiconductor materials for LEDs can be divided into direct transition and indirect transition. In the energy structure of the semiconductor, energy is released when the electrons of the conduction band are combined with the holes of the valence band. In the direct-coupled semiconductor such as silicon (Si), this energy is mainly consumed by heat and vibration, and the luminous efficiency is greatly lowered. On the other hand, in the direct type semiconductor such as gallium nitride (GaN) It is a suitable material for constituting the LED because it appears in the form of light emission. The wavelength of light generated from the direct transition is determined by the energy band gap Eg, which is a characteristic inherent to the semiconductor.

On the other hand, a conventional light emitting diode has a horizontal structure in which N-type GaN, active layer of MQW, P-type GaN, and transparent electrode are sequentially laminated on a sapphire substrate, and a first electrode is formed on the transparent electrode. Then, the transparent electrode, the P-type GaN, and the MQW layer are selectively etched to form the second electrode on the N-type GaN layer. Such a horizontal LED has many difficulties in producing a high output light emitting diode. In order to improve LEDs with high power and high efficiency, it is important to efficiently dissipate the heat generated and reduce the optical loss.

Therefore, research has been conducted on vertical LEDs without a sapphire substrate in order to efficiently emit heat generated during driving and disadvantages of conventional horizontal LEDs, and now vertical-type LEDs are being mass-produced. The vertical LED is fabricated by separating a GaN-based thin film on a sapphire substrate by finally stacking a GaN buffer layer, an N-type GaN, an active layer of an MQW, a P-type GaN, a reflective layer and a conductive material and using a conductive material as a support layer. In this case, the LLO technique is applied to remove the sapphire substrate, and the laser is transmitted through the sapphire substrate and absorbed in the GaN layer. Heat is generated at the GaN layer interface and the GaN molecular structure is decomposed to separate the sapphire substrate and the GaN layer . The basic principle of the LLO process lies in the relationship between the bandgap energy of the material and the photon energy of the laser. The band gap energy of the sapphire substrate is 9.9 eV and that of the GaN thin film is 3.3 eV. In order to affect only the GaN thin film without affecting the sapphire substrate, it is smaller than 9.9 eV of the sapphire substrate and less than 3.3 eV of the GaN A laser with large photon energy should be used. The wavelength of the laser for separating the substrate is determined. Among the commercial lasers satisfying this condition, XeCl excimer laser (4.04 eV) having a wavelength of 308 nm, KrF excimer laser (5.02 eV) of 248 nm, ArF excimer laser ).

However, as described above, the LLO device has been studied for many years, but there is still a part that has not been solved for the mass production of the vertical type LED. In particular, in the case of a single substrate processing apparatus, there is a problem that the processing time is excessively long in order to prevent damage to the substrate due to thermal stress generated when cooling the heat generated in the LLO process. Therefore, it is required to develop a device capable of preventing damage to the substrate due to the LLO process while improving the overall process yield.

Korean Patent Laid-Open Publication No. 10-2012-0097294 (published by Jupiter Sousse, Inc., September 3, 2012) Korean Registered Patent No. 10-0849779 (published by J. Persercel Associates, June 25, 2008) Korean Registered Patent No. 10-1172791 (LTS Co., Ltd., August 3, 2012) Korean Registered Patent No. 10-1103211 (Utsuo Denki K.K., December 29, 2011)

An object of the present invention is to provide a substrate aligning apparatus for a laser lift-off which can improve a process yield while preventing damage to a substrate due to thermal stress generated in a process.

According to an aspect of the present invention, there is provided a substrate aligning apparatus for a laser lift-off, including: a first photographing unit for photographing a first photographing region of a substrate to be laser-processed and outputting a first image of a first resolution; A second photographing unit photographing a second photographing region of the substrate and outputting a second image of a second resolution; A third photographing unit photographing a third photographing region of the substrate and outputting a third image of a third resolution; And a first detection process of detecting a recognition mark from the substrate rotated within a predetermined angle range after the substrate is transferred from the start position to the image pickup region of the third image sensing unit, Calculating a difference from an initial position to be laser-processed on the substrate based on a feed amount and a rotation amount, and when the recognition mark is not detected in the first detection process, A second detection process of detecting the recognition mark on the substrate from the first image and the second image obtained by transferring the substrate to the photographing region of the third camera and performing the first detection process A difference between an initial position to be laser-processed with respect to the substrate on the basis of the feed amount and the rotation amount of the substrate with reference to the start position The shipment includes an alignment section.

According to the present invention, since the laser lift-off process is continuously performed on a plurality of substrates, the cooling of the substrate on which the laser lift-off process is completed and the application of the new laser lift-off process can be performed simultaneously, So that damage to the substrate due to thermal stress can be prevented, and at the same time, the treatment yield can be improved.

1 and 2 are a perspective view and a plan view, respectively, of a preferred embodiment of a laser lift-off device according to the present invention,
3 and 4 are views for explaining a substrate transfer process by the loading unit 200,
5 and 6 are views showing a detailed configuration of the chamber part 300,
7 is a view showing the rotation state of the rotating panel unit 350 by the driving unit 360,
8 is a diagram showing a detailed configuration of the laser processing unit 400,
9 is a view showing a detailed configuration of the susceptor 342,
10 is a view showing a detailed configuration of the upper surface of the susceptor 342,
11 and 12 illustrate the state of the susceptor 342 according to the process,
13 is a view showing a process of mounting a substrate to the susceptor 342,
14 is a view showing a detailed configuration of the alignment and cooling unit 500,
FIG. 15 is a view illustrating a process of separating a substrate by the separating unit 600. FIG.

Hereinafter, a preferred embodiment of a laser lift-off device according to the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are a perspective view and a plan view, respectively, of a preferred embodiment of a laser lift-off device according to the present invention.

1 and 2, a laser lift-off device according to the present invention includes a loading unit 100, a loading unit 200, a chamber unit 300, a laser processing unit 400, an aligning and cooling unit 500, And a separator 600.

In the loading unit 100, cassettes 110 and 120 containing a plurality of substrates are mounted. Two cassettes 110 and 120 are shown in Figures 1 and 2 to ensure process continuity. That is, when the LLO process for the substrate stored in the first cassette 110 is completed, the LLO process for the substrate stored in the second cassette 120 is continuously performed. The first cassette 110, which has been subjected to the LLO process, is removed from the loading unit 100 and a new cassette (not shown) is mounted on all of the substrates. The substrate to be LLO is mounted on only the first cassette 110 among the two cassettes 110 and 120 mounted on the loading unit 100 and the substrate is not stored in the second cassette 120, As shown in FIG. At this time, the substrate drawn out from the first cassette 110 and completed with the LLO process is stored in the second cassette 120. When the LLO process is completed for all the substrates stored in the first cassette 110, the second cassette 120 May be removed from the loading unit 100 and a new cassette (not shown) may be mounted on the second cassette 120 so that subsequent processes may proceed. The number of the cassettes to be mounted on the loading unit 100 may vary depending on the configuration of the process, and only one cassette may be mounted.

The loading unit 200 is a means for transferring the substrate. The loading unit 200 is provided with one or two robot arms to transport the substrate to the cassettes 110 and 120, the chamber unit 300, the aligning and cooling unit 500 and the separating unit 600 Or from the cassettes 110 and 120, the chamber part 300, the aligning and cooling part 500 and the separating part 600.

FIGS. 3 and 4 are views for explaining a substrate transfer process by the loading unit 200. FIG.

Referring to FIGS. 3 and 4, the loading unit 200 is provided with two robot arms 220 and 240. At this time, the first robot arm 220 has a suction hole formed on the upper surface of the end portion so that the lower surface of the substrate can be suctioned and fixed. The second robot arm 240 has a fork- . The loading unit 200 having the above structure is configured such that when the substrate is transferred to the chamber for performing the LLO process, the first robot arm 220 pulls the substrate W1 from the cassette 120, (1). The first robot arm 220 loads the pre-aligned substrate W1 in the alignment and cooling unit 500 into the chamber unit 300 ((2)). On the other hand, when the laser processing is completed, the substrate is transferred by the second robot arm 240. That is, the second robot arm 240 draws the substrate W1 that has undergone the laser processing from the chamber part 300 by the second robot arm 240 and transfers it to the aligning and cooling part 500 ((3)). The second robot arm 240 transfers the substrate W1 that has been cooled in the aligning and cooling unit 500 to the separating unit 600 and the part separated by the separating unit 600 GaN layer) is transferred to the cassette 110 (4).

When using robot arms 220 and 240 having different structures as described above, it is necessary to perform a process in which alignment accuracy is required (i.e., the substrate W1 is taken out from the cassette 120 and transferred to the alignment and cooling unit 500, When the substrate W1 is taken out from the aligning and cooling unit 500 and transferred to the chamber unit 300), the first robot arm 220 which can secure the substrate more reliably is used, The substrate W1 is taken out from the chamber part 300 and transferred to the aligning and cooling part 500 or the substrate W1 is taken out from the aligning and cooling part 500, 600, or when a portion separated from the separation unit 600 is taken out and transferred to the cassette 120), the second robot arm 240 is used. At this time, if the wobbling of the substrate W1 can be reduced during transfer, the loading unit 200 may be provided with only one robot arm of the first robot arm 220 and the second robot arm 240, It is preferable that only the second robot arm 240 is provided for safe loading after the laser processing.

The chamber part 300 is a component that performs laser processing and cooling for the substrate. 5 and 6 are views showing a detailed configuration of the chamber part 300. As shown in FIG.

Referring to FIGS. 5 and 6, the chamber part 300 includes a moving stage 310, a substrate processing part 320, and a cover 330. The substrate processing unit 320 and the cover 330 constitute a chamber 340. The moving stage 310 is an xy stage in which two linear reciprocating transporting means reciprocating in directions perpendicular to each other are formed by overlapping. 5 and 6 show a moving stage 310 composed of two linear reciprocating means reciprocating by a linear motor. However, various types of configurations are possible in addition to the detailed configuration of the moving stage 310, Modifications will be apparent to those skilled in the art to which the present invention pertains, so a detailed description thereof will be omitted. The substrate processing unit 320 may be configured such that when the substrate is loaded and unloaded, the robot arms 110 and 120 provided in the loading unit 100 are disposed inside the chamber 340 through the substrate transfer slit 370 342, 344, 346, 348. The first initial position is a position where the susceptors 342, 344, 346, 348 can be mounted. Among the susceptors 342, 344, 346 and 348 arranged inside the chamber 340 with the chamber 340 being moved to the first initial position, the susceptor on which the substrate is to be loaded or unloaded, 370 to the second initial position where the substrate can be loaded or unloaded.

The substrate processing unit 320 includes a plurality of susceptors 342, 344, 346, and 348, a rotating panel unit 350, and a driving unit 360.

A substrate to be laser-processed is mounted on the upper portion of the plurality of susceptors 342, 344, 346, and 348. In the preferred embodiment of the present invention, four susceptors are provided, and the number of susceptors can be changed according to process conditions. The plurality of susceptors 342, 344, 346, and 348 are fixed to a rotating panel unit 350 to be described later and rotate in accordance with the rotation of the rotating panel unit 350. The detailed structure and function of the susceptor will be described later.

The rotation panel unit 350 is capable of loading and unloading the substrate W through the substrate transfer slit 370 formed on one side of the cover 330 to the first initial position (i.e., the first susceptor 342) Position) in the clockwise and counterclockwise directions. Of course, the rotation panel portion 350 may be configured to rotate clockwise or counterclockwise at an angle of 360 degrees or more relative to the second initial position, but in this case, the respective susceptors 342, 344, 346, 348 A signal line, a power line, and the like, which are connected to each other, are not tangled.

The driving unit 360 rotates the rotary panel unit 350 clockwise by 90 degrees or rotates the rotary panel unit 350 by a necessary angle according to the progress of the process. The operation of the driving unit 360 is performed in conjunction with the movement operation of the chamber 340 by the moving stage 310 in the x-y axis direction. The movement state control of the transfer stage 310 and the driving unit 360 according to the progress of the process is performed by a separate control unit (not shown). A first initial position, which is an initial position of the chamber 340, and a second initial position, which is an initial position of the rotary panel unit 350, are previously determined to control the movement of the chamber 340, and a controller (not shown) Controls the amount of movement of the chamber 340 and the rotary panel unit 350 by the moving stage 310 and the driving unit 360. On the other hand, when the new substrate is unloaded into the chamber 340 after unloading the substrate having been subjected to the laser processing and cooling on the substrate from the chamber 340, the chamber 340 and the rotating panel unit 350 are moved to the first initial Position and the second initial position. The moving stage 310 and the driving unit 360 are driven at the time of performing a process such as alignment of a substrate, laser processing on a substrate, or before or after performing a revolving operation, thereby transferring the chamber 340 and the rotary panel unit 350. The alignment process of the substrate will be described later.

The cover part 330 covers the side surface and the upper surface of the substrate processing part 320 and cuts off part of the substrate part from the outside. A substrate transfer slot 370 for transferring the substrate is formed on one side of the cover portion 330 and a point at 90 degrees clockwise from the center of the substrate transfer slit 370 is aligned and laser processed Respectively.

7 is a view showing a rotating state of the rotating panel unit 350 by the driving unit 360. Fig.

7, when the chamber 340 and the first susceptor 342 are positioned at the first initial position and the second initial position, respectively, the first substrate W1 is transferred through the substrate transfer slit 370, 1 susceptor 342, the driving unit 360 rotates the rotary panel unit 350 clockwise by 90 degrees to transfer the first substrate W1 to the fourth initial position where alignment is to be performed. Next, a substrate alignment process to be described later is performed on the first substrate W1. When the alignment of the first substrate W1 is completed, the chamber 340 and the rotary panel unit 350 are moved to the third initial position, which is the initial position for laser processing, by the moving stage 310 and the driving unit 360 do. Next, the movable stage 310 is driven in the x-axis and y-axis directions so that the laser emitted from the laser processing unit 400 scans the process area of the first substrate W1 to zigzag, Laser processing is performed as part of the process. When the laser processing on the first substrate W1 is completed, the chamber 340 is moved to the first initial position by the moving stage 310. [ When the second substrate W2 is loaded on the second susceptor 344 through the substrate transfer slit 370 in a state where the second susceptor 344 is positioned at the second initial position, do. At this time, when the second substrate W2 is transferred to the third initial position for alignment, the first substrate W1 is positioned at the first cooling position, which is a position rotated 180 ° clockwise with respect to the substrate transfer slit 370 , And then the first susceptor 342 is switched to the cooling state described later. This process is also performed for the third substrate W3 and the fourth substrate W4. At this time, when the third substrate W3 is transferred to the laser processing position, the first substrate W1 is located at the second cooling position, which is a position rotated 270 ° clockwise with respect to the substrate transfer slit 370, When the substrate W4 is transferred to the fourth initial position where alignment is to be performed, the first substrate W1 is positioned at the second initial position. After the laser processing and cooling processing is completed, the first substrate W1 is taken out of the chamber 340 by the loading unit 200 and transferred to the alignment and cooling unit 500.

8 is a diagram showing a detailed configuration of the laser processing unit 400. As shown in Fig.

Referring to FIG. 8, the laser processing unit 400 includes a laser emitting unit 440, a first camera 410, a second camera 420, and a third camera 430.

The laser emitting portion 440 emits the laser generated by the laser generating device (not shown) to the substrate W1 transferred to the laser processing position. At this time, after the sample laser is irradiated once or plural times to the laser beam spot of the substrate W1 transferred to the laser processing position, the image obtained by photographing the sample laser irradiation spot on the substrate W1 by the color camera (not shown) Uniformity, stability, energy density, and the like of the laser, and then laser processing is performed on the substrate W1 when the conditions required for the process are satisfied. The configuration of the optical system for transmitting the laser generated by the laser generating device to the laser emitting part 440 and the lift off principle by the laser emitted from the laser emitting part 440, Those skilled in the art will appreciate that the detailed description is omitted. The first camera 410, the second camera 420, and the third camera 430 function as alignment means for the substrate. In the preferred embodiment of the present invention, the first camera 410 to the third camera 430, which are alignment means, are mounted on the laser processing unit 400, but the condition for not cutting off the laser emitted from the laser emitting unit 440 These cameras can be separately installed.

Hereinafter, the alignment process of the substrate will be described with reference to FIGS.

The first substrate W1 is moved to the fourth initial position and the first substrate W1 is photographed by the first camera 410 and the second camera 420 while the moving stage 310 is moved, . At this time, it is preferable that the center of the first substrate W1 is coincident with the center of the photographing region formed by the first camera 410 and the second camera 420. In this state, the first substrate W1 is moved to the fourth initial position, which is an imaging area of the first camera 410 and the second camera 420, and then the transfer stage 310 is driven to move the first camera 410 And the second camera 420 photographs the entire area of the first substrate W1. At this time, the first camera 410 and the second camera 420 use high resolution cameras. In addition, the second camera 420 is configured to be movable relative to the first camera 410 to detect a recognition mark on a substrate having a different size. If the recognition mark is detected by the first camera 410 and the second camera 420, the detection of the recognition mark is performed based on the detection position of the recognition mark by the transfer stage 310 and the driving unit 360, 350 are moved to transfer the first substrate W1 to the third initial position, and then laser processing is performed on the first substrate W1.

Alternatively, when the recognition mark on the first substrate W1 is not detected from the images captured by the first camera 410 and the second camera 420, the transfer stage 310 and the driving unit 360 may move the chamber 340 And the rotary panel unit 350 to move the first substrate W1 to the photographing area of the third camera 430. [ After the first substrate W1 is moved to the image capturing area of the third camera 430, when the rotation panel unit 350 is rotated up to 180 degrees in the clockwise and counterclockwise directions by the third camera 430 The entire area of the first substrate W1 is photographed. When the recognition mark on the first substrate W1 is detected by the above process, the chamber 340 and the rotary panel unit 350 are moved by the transfer stage 310 and the driving unit 360 based on the detection position of the recognition mark After the first substrate W1 is transferred to the fourth initial position, the first camera 410 and the second camera 420 perform precise alignment. When the recognition mark is detected by the first camera 410 and the second camera 420, the detection of the recognition mark is performed on the basis of the detection position of the recognition mark by the transfer stage 310 and the driving unit 360, 350 are moved to transfer the first substrate W1 to the third initial position, and then laser processing is performed on the first substrate W1. The image analysis operation for detecting such a recognition mark is performed by a control unit (not shown) or an alignment unit (not shown) provided separately. On the other hand, the resolutions of the first camera 410 to the third camera 430 may be the same or different according to the required alignment accuracy.

Fig. 9 is a view showing the detailed structure of the susceptor 342, Fig. 10 is a view showing the detailed structure of the upper surface of the susceptor 342, and Figs. 11 and 12 are schematic views of the susceptor 342 Fig.

9 to 12, the susceptor 342 includes a cover 910, a case 920, a heater 930, a cooling plate 940, a first pipe 950, A third pipe 970, a fourth pipe 975, a cooling plate feeding part 980, and a heater fixing part 990.

The lid part 910 is made of silicon carbide (SiC) and installed on the upper part of the heater part 930. And a substrate is disposed on the top of the cover portion 910. [ 11 is a diagram showing a detailed configuration of the lid unit 910. As shown in Fig. Referring to FIG. 11, a plurality of first fixing pins 992 are provided on the upper surface of the lid unit 910. The lid 910 is also provided with a liftable second fixing pin 994 and a liftable pin 996. In addition, a groove 999 is formed on the upper surface of the lid unit 910 to adhere the substrate to the upper surface of the lid unit 910. The shape of the groove is formed by three concentric circles , And the intersection that divides the concentric circle into four equal parts consists of four straight lines dividing the diameter of the concentric circle formed on the straight line and the outermost circle. A plurality of (for example, four) through holes 998 are formed in the innermost concentric circles so as to communicate with the first pipe 950 at equal intervals. One end of the first pipe 950 is screwed to the cover 910 and the other end of the first pipe 950 is connected to a first exhaust pump (not shown) To the lid part (910). At this time, each through hole 998 is inclined downwardly at a predetermined angle (for example, 45 °) in the direction of the center of the concentric circle so that the substrate bent by the laser processing when the chamber 340 and the rotary panel unit 350 are moved And is surely fixed to the upper surface of the lid portion 910.

The heater unit 930 is in close contact with the lower surface of the lid unit 910 and raises the temperature of the substrate mounted on the upper surface of the lid unit 910 to a process temperature (for example, 250 ° C to 300 ° C). To this end, the heater unit 930 has a structure in which heat is embedded in the cylindrical silicon carbide, and is closely attached to the lid unit 910 by the heater fixing unit 990.

The cooling plate portion 940 is made of a material having a high heat transfer coefficient (for example, aluminum) and is disposed at a lower position of the heater portion 930 at a predetermined distance. The cooling plate portion 940 is fixed to the case portion 920, It is ascended and descended together. One end of the flow path is connected to the second pipe 960 and the other end thereof is connected to the third pipe 970. The cooling pipe 940 is connected to the cooling pipe 940, . At this time, the second pipe 960 and the third pipe 970 function as refrigerant inflow passages and refrigerant outflow passages, respectively.

One end of the fourth pipe 975 is inserted into the through hole formed in the lower plate of the case part 920 and the susceptor 342 is inserted into the through hole formed in the lower plate of the case part 920. The fourth pipe 975 is a pipe for discharging air inside the susceptor 342, The air in the susceptor 342 flows through the opening of the susceptor 342 when it is in the state for cooling. The other end of the fourth pipe 975 is connected to a second exhaust pump (not shown).

The susceptor 342 having the structure as described above can be used in the loading of the substrate and in the laser processing (i.e., when the susceptor 342 is moved from the second initial position and the rotating panel portion 350 in the clockwise direction (That is, when the susceptor 342 is rotated 180 degrees in the clockwise direction and 90 degrees in the counterclockwise direction from the second initial position) Lt; / RTI > is maintained in a cooled state. When the susceptor 342 is maintained in a cooled state, the substrate is cooled to at least 150 캜. 11 and 12 are diagrams showing the internal structure of the susceptor 342 when the susceptor 342 is in the heating state and the cooling state, respectively. 11 and 12, the cooling plate portion 940 inside the susceptor 342 in a heated state is spaced apart from the heater portion 930 by a certain distance, and cooling (cooling) inside the susceptor 342 The plate portion 940 is in close contact with the lower portion of the heater portion 930. At this time, when the susceptor 342 is maintained in a cooled state, exhaust through the fourth pipe 975 is performed, and the refrigerant flows through the internal flow path of the cooling plate portion 940.

The case portion 920 accommodates the heater portion 930 and the cooling plate portion 940 and moves up and down with the cooling plate portion 940 during lifting and lowering of the cooling plate feeding portion 980. Thus, the upper portion of the case portion 920 is spaced from the lid portion 910 when the susceptor 342 is maintained in a cooled state. With this structure, the cooling of the susceptor 342 can be performed more efficiently.

13 is a view showing the process of mounting the substrate on the susceptor 342. As shown in FIG.

Referring to FIG. 13, when the substrate W having a small size is loaded, the second fixing pin 994 and the loading pin 996 provided on the cover portion 910 are protruded to the upper portion of the cover portion 910. When the substrate W is mounted on the loading pin 996, the loading pin 996 descends and the substrate W and the lid 910 are passed through the through hole 998 communicating with the first pipe 950, So that the substrate W is brought into close contact with the upper surface of the lid unit 910. The substrate W adhered to the upper surface of the lid part 910 is prevented from flowing by the second fixing pin 994. On the other hand, when the substrate of a large size is loaded, only the loading pins 996 installed on the cover part 910 move up and down, and the substrate is prevented from flowing by the first fixing pins 992.

Fig. 14 is a diagram showing a detailed configuration of the alignment and cooling section 500. Fig.

Referring to FIG. 14, the aligning and cooling unit 500 includes a pre-aligning unit 510 and a cooling unit 520.

The pre-alignment unit 510 is formed with a plurality of substrate receiving portions on which substrates of different sizes (for example, a substrate of 100 mm and a substrate of 150 mm) can be mounted. For example, when the first to fourth substrates W1 to W4 are being processed in the chamber, the substrate W5 to be subjected to laser processing drawn from the first cassette 110 or the second cassette 120 And is loaded into the substrate accommodating portion of the pre-alignment portion 510. Then, the substrate W5 is rotated by the rotary plate located at the lower portion of the substrate accommodating portion, and the pre-alignment is performed such that the flat zone is located at the preset alignment point.

The cooling unit 520 includes a plurality of substrate mounting portions on which substrates of different sizes can be mounted, and a plurality of cooling slits provided on the rear side of the substrate mounting portions in correspondence with the respective substrate mounting portions. The number of the substrate mounting portions and the number of the cooling slits is determined according to the cooling time of the substrate, the substrate processing time in the chamber portion 340, and the like. The first substrate W1 drawn out from the chamber portion 340 by the loading portion 200 is loaded on the substrate mounting portion of the cooling portion 520 and then A coolant (for example, nitrogen gas) is discharged from the cooling slit to the substrate to cool the substrate to room temperature.

FIG. 15 is a view illustrating a process of separating a substrate by the separating unit 600. FIG.

15, the substrate W drawn out from the aligning and cooling unit 500 by the loading unit 200 is loaded into the substrate accommodating unit 610 of the separating unit 600. Suction means is provided below the substrate receiving portion 610 to bring the lower surface of the substrate W (that is, the upper surface of the GaN layer) downwardly. Next, the substrate separating unit 620 is lowered by the substrate W and is brought into close contact with the upper surface of the substrate W (that is, the lower surface of the sapphire substrate). The upper surface of the substrate W is pulled toward the substrate separation portion 620 by the suction means provided in the separation portion 620. [ The substrate W is separated into the GaN layer W-1 and the sapphire substrate W-2 by the attraction force in the opposite direction by the substrate accommodating portion 610 and the substrate separating portion 620. [ Subsequently, the substrate separator 620 is lifted while the separated sapphire substrate W-2 is fixed. When the substrate rejection 630 moves downward from the substrate separator 620, the substrate separator 620 The sapphire substrate W-2 fixed to the substrate separating portion 620 is contained in the substrate receiving portion 630 by the suction force of the substrate holding portion 620. [ The loading unit 200 may be disposed at a predetermined position of the first cassette 110 or the second cassette 120 located in the mounting portion 100, .

In the above description, terms such as 'first', 'second', and the like are used to describe various components, but each component should not be limited by these terms. That is, the terms 'first', 'second', and the like are used for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, a 'first component' may be referred to as a 'second component', and similarly, a 'second component' may also be referred to as a 'first component' . Also, the term " and / or " is used in the sense of including any combination of a plurality of related listed items or any of the plurality of related listed items.

In addition, each of the components shown in the respective figures is shown separately to represent different characteristic functions in the power generation apparatus according to the present invention, and each component is divided into separate hardware or one software configuration unit It does not mean that it is done. That is, each of the components is divided into separate components for convenience of description, and at least two components are combined to form one component, or one component is divided into a plurality of components to perform the same function . And the integrated embodiments and the separate embodiments of each of these components are also included in the scope of the present invention unless they depart from the essence of the present invention.

In addition, some of the elements are not essential elements for performing essential functions in the present invention, but may be optional elements for improving performance. The present invention can be implemented only by components essential for realizing the essence of the present invention, except for components used for performance improvement, and includes only essential components except for optional components used for performance improvement. And are included in the scope of the invention.

On the other hand, when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

In addition, the terminology used herein should be taken as illustrative only of specific embodiments and should not be understood as being intended to limit the invention. And, the singular expressions include plural expressions unless the context clearly dictates otherwise. Furthermore, the terms 'include', 'having', 'comprising', and the like in the specification are intended to specify the presence of stated features, integers, steps, operations, elements, parts or combinations thereof, But do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation in the embodiment in which said invention is directed. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the appended claims.

100: mounting portion, 200: loading portion,
300: chamber part, 400: laser processing part,
500: alignment and cooling unit 600: separation unit,
110: first cassette, 120: second cassette,
220: first robot arm, 240: second robot arm,
310: transfer stage, 320: substrate processing section,
330: cover portion, 342, 344, 346, 348: susceptor,
350: rotation panel part, 352: opening,
360: driving unit, 370: transport slit,
410: first camera, 420: second camera,
430: third camera, 440: laser emitting portion,
910: lid part, 920: case part,
930: heater part, 940: cooling plate part,
950, 960, 970, 975: first pipe, second pipe, third pipe, fourth pipe,
980: cooling plate feed section, 990: heater fixing section,
992,994,996: a first fixing pin, a second fixing pin, a loading pin,
610: substrate receiving portion, 620: substrate separating portion,
630: Substrate rejection

Claims (1)

A moving stage for moving a substrate.
A rotating panel part for rotating the substrate, and
A chamber part including the moving stage and a driving part for driving the rotary panel part; And
A first camera for photographing the substrate and outputting a first image of a first resolution,
A second camera movably installed on the basis of the first camera and configured to capture a substrate and output a second image having a second resolution,
A third camera for photographing the substrate and outputting a third image of a third resolution,
Performing a first detection process of photographing the substrate using the first camera and the second camera by the moving stage and the driving unit at a fourth initial position to detect a recognition mark, When the recognition mark is detected in the process, the substrate is transferred to the third initial position, and when the recognition mark is not detected in the first detection process, the substrate is moved to the photographing region of the third camera, Performing a second detection process of detecting the recognition mark by photographing the substrate using the third camera while rotating the substrate by 180 ° in the clockwise direction and 180 ° in the counterclockwise direction by the panel unit, Wherein when the recognition mark is detected in the detection step, the substrate is moved to the fourth initial position and the first detection process is performed again. Substrate alignment device comprising: a; unit.

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