KR101826413B1 - Three dimensional hybrid nanostructures based materials for efficient photochemical or photoelectrochemical reaction and manufacturing method thereof - Google Patents
Three dimensional hybrid nanostructures based materials for efficient photochemical or photoelectrochemical reaction and manufacturing method thereof Download PDFInfo
- Publication number
- KR101826413B1 KR101826413B1 KR1020160035394A KR20160035394A KR101826413B1 KR 101826413 B1 KR101826413 B1 KR 101826413B1 KR 1020160035394 A KR1020160035394 A KR 1020160035394A KR 20160035394 A KR20160035394 A KR 20160035394A KR 101826413 B1 KR101826413 B1 KR 101826413B1
- Authority
- KR
- South Korea
- Prior art keywords
- nano
- substrate
- dimensional
- nanostructured
- nanostructured portion
- Prior art date
Links
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 80
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000007769 metal material Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 239000002073 nanorod Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- -1 nano spring Substances 0.000 claims description 5
- 239000002110 nanocone Substances 0.000 claims description 5
- 239000002074 nanoribbon Substances 0.000 claims description 5
- 239000002070 nanowire Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910005540 GaP Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 229910002367 SrTiO Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000011258 core-shell material Substances 0.000 claims description 3
- 229920005570 flexible polymer Polymers 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000001308 synthesis method Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 230000021615 conjugation Effects 0.000 claims 2
- 238000007743 anodising Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000007774 longterm Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000003911 water pollution Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0038—Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a three-dimensional hybrid nano-structured element for an effective photochemical or photoelectrochemical reaction and a method of manufacturing the same. According to an embodiment of the present invention, there is provided a three-dimensional hybrid nano-structured element including a substrate and a plurality of three-dimensional nanostructures arranged on the substrate.
Description
The present invention relates to a three-dimensional hybrid nano-structured element for effective photochemistry or photoelectrochemical reaction and a method for manufacturing the same. More particularly, the present invention relates to a three-dimensional hybrid nano-structured element for maximizing photon absorption in a long wavelength region, And a device for improving the light conversion efficiency by optimizing the reaction and a manufacturing method thereof.
Since the Industrial Revolution, fossil fuels have been used extensively for a short period of time, and environmental problems such as air pollution, water pollution, global warming, and energy shortages due to fossil fuel reserves have received global attention.
Each government, institution, and research institute is devising and developing various methods to solve the environmental problem and energy shortage problem. Among these methods, the technology that solves problems by using the most abundant resource There is a lot of focus on. When solar light is incident on an element made of a semiconductor or a metal, an electron-hole pair is generated in a device that has absorbed the photon, and each of the electrons and holes separated from the generated electron-hole pairs is separated from the external environment such as air, water, Perform photoelectrochemical reactions to purify the atmosphere, purify the water, or produce energy resources such as hydrogen and hydrocarbon compounds. The most widely used material that absorbs sunlight to perform photochemical or photoelectrochemical reactions is titanium dioxide (TiO 2 ), which performs relatively photochemical or photoelectrochemical reactions with external environments such as air and water It is known to give. However, titanium dioxide has a bandgap that is large enough to absorb the photons and is limited to the ultraviolet region, which limits the effective absorption of sunlight. In addition, the present technology has a limitation in a technology for stably coating an element that performs photochemical or photoelectrochemical reaction by receiving sunlight such as titanium dioxide on a substrate, so that the element is not effectively used for a long period of time.
In order to solve the environmental problem and energy shortage problem by using solar light, the device should absorb photons of a wide wavelength range including visible light and infrared light, efficiently split the generated electron-hole pairs by absorbing photons , And each of the separated electrons and holes must perform a photochemical or photoelectrochemical reaction effectively with an external environment such as air or water. Further, in order for these devices to perform photochemical or photoelectrochemical reactions in various environments over a long period of time, a technique capable of stably coating the substrate is essential.
In order to overcome these limitations simultaneously, a three-dimensional hybrid nano-structured element made of at least two or more materials is proposed, and a manufacturing method capable of stably coating the three-dimensional hybrid nano-structured element on any substrate is proposed.
The present invention aims at providing a device for maximizing photon absorption in a long wavelength region and optimizing photochemical or photoelectrochemical reaction by using a three-dimensional hybrid nano-structured element made of two or more materials to improve the light conversion efficiency do.
Another object of the present invention is to provide a manufacturing method capable of stably coating a three-dimensional hybrid nano-structured element on any substrate.
According to an embodiment of the present invention, there is provided a three-dimensional hybrid nano-structured element including a substrate and a plurality of three-dimensional nanostructures arranged on the substrate.
According to another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a pre-patterned layer on a substrate; And forming a three-dimensional nanostructure on the free-pattern layer. The present invention also provides a method of fabricating a three-dimensional hybrid nano-structured element.
The present invention can maximize photon absorption by a plasmon resonance effect using a metal material by forming a three-dimensional nanostructure from a semiconductor material having a different band gap, thereby absorbing photons in a long wavelength region.
In addition, the present invention improves photon absorption efficiency by confining light with a strong scattering effect of light through a three-dimensional nanostructure, and is capable of rapidly separating electrons and holes from electron-hole pairs and having a wide surface area to optimize photochemical or photoelectrochemical reactions The light conversion efficiency can be improved.
In addition, the present invention can stably coat a three-dimensional hybrid nano-structured element on any substrate, thereby improving durability and long-term stability of the device.
1 is a view showing a configuration of a three-dimensional hybrid nano-structured element according to an embodiment of the present invention.
2 is a view showing a cross-sectional structure of the pre-patterned layer shown in FIG.
3 is a view showing a cross-sectional structure of a three-dimensional nanostructure on a substrate without a pre-patterned layer.
4 is a view showing a cross-sectional structure of a three-dimensional nanostructure on a substrate having a pre-patterned layer.
5 is a view showing a cross-sectional structure of a three-dimensional nanostructure made of two semiconductor materials.
FIG. 6 is a view showing a configuration of a three-dimensional hybrid nano-structured element according to another embodiment of the present invention.
7 is a view showing a configuration of a three-dimensional hybrid nano structured element according to another embodiment of the present invention.
8 is a view for explaining the scattering effect of incident light of the three-dimensional nanostructure.
FIG. 9 is a diagram showing measurement results of light scattering effect in a three-dimensional nanostructure. FIG.
10 is a flowchart illustrating a method of fabricating a three-dimensional hybrid nano-structured element according to an embodiment of the present invention.
11 is a view for explaining an inclination angle deposition method in a method of forming a three-dimensional nanostructure in a method of manufacturing a three-dimensional hybrid nano-structured element.
Hereinafter, the present invention will be described more specifically based on preferred embodiments of the present invention. However, the following embodiments are merely examples for helping understanding of the present invention, and thus the scope of the present invention is not limited or limited.
1 is a view showing a configuration of a three-dimensional hybrid nano-structured element according to an embodiment of the present invention.
Referring to FIG. 1, a three-dimensional hybrid nano-structured device according to an embodiment of the present invention may include a
The
The free pattern layer 11 is formed on the
Here, the pre-patterned layer 11 may include a conductive material. For example, the free pattern layer 11 may be formed of a metal such as Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, may include in, Ta, Pb, V, W, Zr, ITO, FTO, SnO 2, AZO, GZO, IZO, ZnO, and at least one conductive polymer.
The three-
At this time, the three-
For example, the three-dimensional nanostructure may be formed in a nano-helix structure on a substrate without a pre-patterned layer as shown in FIG.
In addition, the three-dimensional nanostructure may be formed in a nanorix structure periodically arranged on a substrate having a pre-patterned layer as shown in FIG.
In addition, the three-
In addition, the three-
Specifically, the three-
In one embodiment, the three-
At this time, the
In another embodiment, the three-
3, the three-
Alternatively, the three-
Herein, the semiconductor material may include at least one of an inorganic material, an inorganic mixture, and a compound, and the inorganic material may include SnO 2 , TiO 2 , WO 3 , BiVO 4 , Fe 2 O 3 , ITO, FTO, Cu 2 O, 2 , SrTiO 3 , MoS 2 , WS 2 , CdS, CdSe, GaN, InGaN, GaAs, InGaAs, GaP, InGaP, Si, SiC, ZnO, ZnS, ZrO 2 , In 2 O 3 and KTaO 3 can do.
The metal material may be at least one selected from the group consisting of Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, Mo, Mn, Sn, , V, W, and Zr.
The three-
Meanwhile, as shown in FIG. 7, the three-
Here, the three-
In the three-dimensional hybrid nano-structured element according to an embodiment of the present invention, the three-
In addition, the three-dimensional hybrid nano-structured element according to an embodiment of the present invention can be measured as shown in FIG. 9 when the light scattering effect is measured. 9 (a) shows the concept of specular reflectance and diffuse reflectance of incident light, and FIG. 9 (b) shows the concept of light reflected from the three-dimensional nanostructure in a predetermined angle range 45 degrees, 30 degrees). In this case, in FIG. 9 (b), the results (A) measured on the FTO (Fluorine-doped Tin Oxide) layer and the results (B) measured on the 3D nanostructures fabricated on the FTO . 9 (b), the three-dimensional nanostructures can improve the photon absorption efficiency by lowering the specular reflectance and increasing the diffuse reflectance, thereby enhancing the scattering effect of strong light.
A three-dimensional hybrid nano structure element according to an embodiment of the present invention has a three-dimensional nanostructure formed of a semiconductor material having a different band gap, absorbs photons in a long wavelength region, and maximizes photon absorption by a plasmon resonance effect using a metal material can do.
In addition, the three-dimensional hybrid nano-structured element according to an embodiment of the present invention improves photon absorption efficiency by confining light with a strong scattering effect of light through a three-dimensional nanostructure, and separates electrons and holes from electron- It is fast and has a wide surface area to optimize photochemical or photoelectrochemical reactions to improve the light conversion efficiency.
10 is a flowchart illustrating a method of fabricating a three-dimensional hybrid nano-structured element according to an embodiment of the present invention.
10, a method of fabricating a three-dimensional hybrid nano-structured element according to an embodiment of the present invention includes forming a free pattern layer on a substrate (S100) and forming a three-dimensional nanostructure on the free pattern layer Step S200.
Referring to FIG. 10, in step S100, a pattern formed on a nanoimprint mold may be transferred to a substrate by imprinting to form a pre-patterned layer.
Here, the substrate may be a non-conductive substrate such as glass and sapphire, a flexible non-conductive substrate, a metal substrate, a flexible metal substrate, a transparent and highly conductive oxide substrate, a transparent and highly conductive flexible oxide substrate, a conductive high polymer substrate, Can be used.
Also, the pre-patterned layer may be formed of a conductive material. For example, the free-pattern layer may be formed of a metal such as Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, Mo, Mn, of Ta, Pb, V, W, Zr, ITO, FTO, SnO 2, AZO, GZO, IZO, ZnO , and conductive polymer can be formed by at least one.
Alternatively, in step S100, the metal plate of one of aluminum, titanium, and tantalum may be anodized to form a pre-patterned layer.
Next, in step S200, a three-dimensional nanostructure can be formed on the pre-patterned layer. At this time, the three-dimensional nanostructure can be formed of two or more different materials.
At step S200, at least one of an inclined angle deposition method, an electron beam deposition method, a thermal deposition method, a chemical vapor deposition method, a sputtering deposition method, a flame gas phase synthesis method, a hydrothermal synthesis method, a drop casting method, a light deposition method, an electrodeposition deposition method, an atomic layer deposition method, A three-dimensional nanostructure can be formed.
Specifically, in step S200, as shown in FIG. 11, the three-
In this process, the island-shaped initial deposition material formed on the upper surface of the substrate initially forms a shadow region on the backside, and then the deposited material is deposited only on the initial deposition material without being deposited in the shadow region, Dimensional nanostructure can be formed.
When forming a three-dimensional nanostructure, a nano dot, a nano rod, a slanted nano rod, a zigzag nano rod, a nano helix dimensional nanostructure can be formed by at least one of nano structure of nano wire, nano helix, nano wire, nano ribbon, nano spring, and nano cone.
Meanwhile, in step S200, according to an embodiment, a step of forming a first nanostructured part on the substrate or the pre-patterned layer and a step of forming a second nanostructured part connected to the first nanostructured part may be included. At this time, the first nanostructured portion may be formed of one of a semiconductor material and a metal material, and the second nanostructured portion may be formed of the remaining one. Here, the first nanostructure may be stably formed on a substrate or a free layer using an inclination angle evaporation method, so that long-term stability and durability can be excellent. Also, the second nanostructured portion and the third nanostructured portion can be formed using one of various methods of forming the three-dimensional nanostructure described above. Such a three-dimensional nanostructure is formed by the inclination angle deposition method, thereby overcoming the limitations of the conventional technique of not stably coating the device on the substrate, thereby improving durability and long-term stability.
In step S200, a step of forming a first nanostructured portion on the substrate or the pre-patterned layer, forming a second nanostructured portion connected to the first nanostructured portion, and forming a second nanostructured portion connected to the second nanostructured portion, 3 < / RTI > nanostructure. At this time, the first nanostructured portion may be formed of a semiconductor material, the second nanostructured portion may be formed of a metal material, and the third nanostructured portion may be formed of a semiconductor material different from the first nanostructured portion. Alternatively, the first nanostructured portion may be formed of a semiconductor metal material, the second nanostructured portion may be formed of a semiconductor material different from the first nanostructured portion, and the third nanostructured portion may be formed of a metallic material. Here, the first nanostructured portion can be stably formed on a substrate or a pre-patterned layer by using a tilt angle deposition method, so that durability and long-term stability can be excellent. Also, the second nanostructured portion and the third nanostructured portion can be formed using one of various methods of forming the three-dimensional nanostructure described above. Such a three-dimensional nanostructure is formed by the inclination angle deposition method, thereby overcoming the limitations of the conventional technique of not stably coating the device on the substrate, thereby improving durability and long-term stability.
Also, in step S200, the first nanostructured portion and the second nanostructured portion may be formed in a core-shell structure according to another embodiment. At this time, the second nanostructured portion may be formed so as to surround the surface of the first nanostructured portion.
Herein, the semiconductor material may include at least one of an inorganic material, an inorganic mixture, and a compound, and the inorganic material may include SnO 2 , TiO 2 , WO 3 , BiVO 4 , Fe 2 O 3 , ITO, FTO, Cu 2 O, 2 , SrTiO 3 , MoS 2 , WS 2 , CdS, CdSe, GaN, InGaN, GaAs, InGaAs, GaP, InGaP, Si, SiC, ZnO, ZnS, ZrO 2 , In 2 O 3 and KTaO 3 can do.
The metal material may be at least one selected from the group consisting of Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, Mo, Mn, Sn, , V, W, and Zr.
A method for fabricating a three-dimensional hybrid nano-structured element according to an embodiment of the present invention can stably coat a three-dimensional hybrid nano-structured element on a substrate in order to perform a photochemical or photoelectrochemical reaction in a variety of environments for a long period of time.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. In addition, it is a matter of course that various modifications and variations are possible without departing from the scope of the technical idea of the present invention by anyone having ordinary skill in the art.
10: substrate
11: free pattern layer
15: Three-dimensional nanostructures
20: First nano structure
30: second nano structure
40: third nano structure
Claims (32)
And a plurality of three-dimensional nanostructures arranged on the substrate,
The three-dimensional nanostructure includes a first nanostructured portion extending in one direction on the substrate, a second nanostructured portion connected to the longitudinal end of the first nanostructured portion and a second nanostructured portion connected to the second nanostructured portion, And a third nanostructured portion extending in the longitudinal direction of the first nanostructured portion to enlarge the surface area to increase photon absorption efficiency,
Wherein the first nanostructured portion comprises a semiconductor material, the second nanostructured portion comprises a metallic material, and the third nanostructured portion comprises a semiconductor material different from the first nanostructured portion,
The three-dimensional nanostructure may be formed of a semiconductor material having a different band gap to absorb photons in a long wavelength region and induce photon absorption due to a plasmon resonance effect using a metal material of the second nanostructure portion. A three-dimensional hybrid nano-structured element that improves photo-conversion efficiency through photochemical or photoelectron conjugation reaction by rapidly separating electrons and holes and expanding the surface area.
Wherein the semiconductor material comprises at least one of an inorganic material, an inorganic mixture, and a compound.
The inorganic material may be selected from the group consisting of SnO 2 , TiO 2 , WO 3 , BiVO 4 , Fe 2 O 3 , ITO, FTO, Cu 2 O, CuO, SiO 2 , SrTiO 3 , MoS 2 , WS 2 , CdS, CdSe, GaN, InGaN, 3D hybrid nanostructured elements, comprising a GaAs, InGaAs, GaP, InGaP, Si, SiC, ZnO, ZnS, ZrO 2, in 2 O 3 and any one of KTaO 3.
The metal material may be at least one selected from the group consisting of Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, Mo, Mn, Sn, Zn, V, W, and Zr.
The three-dimensional nanostructure may be a nano dot, a nano rod, a slanted nano rod, a zigzag nano rod, a nano helix, a nano wire, ), A nano ribbon, a nano spring, and a nano cone. The three-dimensional hybrid nano-structured element is formed of at least one of nano structure, nano ribbon, nano spring, and nano cone.
Wherein the three-dimensional nanostructure is formed in a core-shell structure.
And a pre-patterned layer formed on the substrate, the pre-patterned layer including a pattern supporting the three-dimensional nanostructure.
Wherein the pre-patterned layer comprises a conductive material.
The free-pattern layer may include at least one of Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, Mo, Mn, Sn, Zn, , At least one of V, W, Zr, ITO, FTO, SnO 2 , AZO, GZO, IZO, ZnO and a conductive polymer.
Wherein the substrate comprises any one of a nonconductive substrate such as glass and sapphire, a flexible nonconductive substrate, a metal substrate, a flexible metal substrate, a transparent conductive oxide substrate, a transparent conductive flexible oxide substrate, a conductive polymer substrate, a conductive flexible polymer substrate, Three - dimensional hybrid nano - structured device.
And forming a three-dimensional nanostructure on the pre-patterned layer,
In the step of forming the three-dimensional nanostructure, a first nanostructured portion extending in one direction is formed on the substrate, a second nanostructured portion is coupled in a longitudinal direction of the first nanostructured portion, To form a third nanostructured portion extending in the longitudinal direction of the first nanostructured portion,
Wherein the first nanostructured portion is formed of a semiconductor material, the second nanostructured portion is formed of a metal material, and the third nanostructured portion is formed of a semiconductor material different from the first nanostructured portion,
The three-dimensional nanostructure may be formed of a semiconductor material having a different band gap to absorb photons in a long wavelength region and induce photon absorption due to a plasmon resonance effect using a metal material of the second nanostructure portion. A method for fabricating a three-dimensional hybrid nano-structured element, wherein the separation of electrons and holes is rapid and the surface area is enlarged to improve the photoconversion efficiency through photochemical or photoelectron conjugation reaction.
Wherein the semiconductor material comprises at least one of an inorganic material, an inorganic mixture, and a compound.
The inorganic material may be selected from the group consisting of SnO 2 , TiO 2 , WO 3 , BiVO 4 , Fe 2 O 3 , ITO, FTO, Cu 2 O, CuO, SiO 2 , SrTiO 3 , MoS 2 , WS 2 , CdS, CdSe, GaN, InGaN, method of producing a three-dimensional hybrid nanostructured elements, comprising a GaAs, InGaAs, GaP, InGaP, Si, SiC, ZnO, ZnS, ZrO 2, in 2 O 3 and any one of KTaO 3.
The three-dimensional nanostructure may be at least one of an inclined angle deposition method, an electron beam deposition method, a thermal deposition method, a chemical vapor deposition method, a sputtering deposition method, a flame gas phase synthesis method, a hydrothermal synthesis method, a drop casting method, a light deposition method, an electrodeposition deposition method, an atomic layer deposition method, Wherein the three-dimensional hybrid nanostructured device is formed by one method.
The three-dimensional nanostructure may be a nano dot, a nano rod, a slanted nano rod, a zigzag nano rod, a nano helix, a nano wire, ), A nano ribbon, a nano spring, and a nano cone. The method of manufacturing a three-dimensional hybrid nano-structured element according to claim 1,
Wherein the step of forming the pre-patterned layer comprises transferring a pattern formed on the nanoimprint mold to the substrate by an imprinting method to form the pre-patterned layer.
Wherein the pre-patterned layer comprises a conductive material.
The free-pattern layer may include at least one of Ag, Au, Cu, Al, Pt, Pd, Ti, Co, Ni, Si, Fe, Cr, Ru, Rh, Ir, Mg, Mo, Mn, Sn, Zn, , V, W, Zr, ITO, FTO, SnO 2, AZO, GZO, IZO, ZnO and the method for producing a conductive polymer of the at least one three-dimensional hybrid nano-containing structure element.
Wherein the pre-patterned layer is formed by anodizing one of the metal plates of aluminum, titanium and tantalum to form the pre-patterned layer.
Wherein the substrate is one of an insulating substrate such as glass and sapphire, a flexible insulating substrate, a metal substrate, a flexible metal substrate, a transparent conductive oxide substrate, a transparent conductive flexible oxide substrate, a conductive polymer substrate, a conductive flexible polymer substrate, A method for manufacturing a three - dimensional hybrid nano - structured element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160035394A KR101826413B1 (en) | 2016-03-24 | 2016-03-24 | Three dimensional hybrid nanostructures based materials for efficient photochemical or photoelectrochemical reaction and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160035394A KR101826413B1 (en) | 2016-03-24 | 2016-03-24 | Three dimensional hybrid nanostructures based materials for efficient photochemical or photoelectrochemical reaction and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170110943A KR20170110943A (en) | 2017-10-12 |
| KR101826413B1 true KR101826413B1 (en) | 2018-02-06 |
Family
ID=60140805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160035394A KR101826413B1 (en) | 2016-03-24 | 2016-03-24 | Three dimensional hybrid nanostructures based materials for efficient photochemical or photoelectrochemical reaction and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101826413B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220014564A (en) | 2020-07-29 | 2022-02-07 | 고려대학교 세종산학협력단 | Silicon Nanowires-Transition Metal Selenide Nanosheets and Preparation Method Thereof |
| KR20220014565A (en) | 2020-07-29 | 2022-02-07 | 고려대학교 세종산학협력단 | Silicon Nanowires-Transition Metal Sulfide Nanosheets and Preparation Method Thereof |
| KR20230016434A (en) * | 2021-07-26 | 2023-02-02 | 고려대학교 산학협력단 | Method for fabricating nano structure and photocatalyst device using oblique angle deposition and photocatalyst device using the same method |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010718A (en) * | 2019-03-29 | 2019-07-12 | 五邑大学 | A kind of GaN/Si micro wire array photo detector and preparation method thereof |
| CN111573618B (en) * | 2020-05-21 | 2021-06-15 | 南京大学 | Spiral loop magnetic head of in-situ integrated three-dimensional nanowire and preparation method and application thereof |
| CN112481634B (en) * | 2020-10-08 | 2021-12-21 | 江苏大学 | Ternary composite TiO2Preparation method and application of-STO-CdS NRs photoelectrode |
| CN115432939B (en) * | 2022-03-22 | 2024-04-09 | 苏州科技大学 | High-performance tungsten trioxide/bismuth tungstate film and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009035308A2 (en) | 2007-09-13 | 2009-03-19 | Korea University Industrial & Academic Collaboration Foundation | Metal-polymer hybrid nanomaterials, method for preparing the same method for controlling optical property of the same and optoelectronic device using the same |
-
2016
- 2016-03-24 KR KR1020160035394A patent/KR101826413B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009035308A2 (en) | 2007-09-13 | 2009-03-19 | Korea University Industrial & Academic Collaboration Foundation | Metal-polymer hybrid nanomaterials, method for preparing the same method for controlling optical property of the same and optoelectronic device using the same |
Non-Patent Citations (1)
| Title |
|---|
| Nano Lett. 2014, Vol. 14, pp. 365-372 (2013.12.13.)* |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220014564A (en) | 2020-07-29 | 2022-02-07 | 고려대학교 세종산학협력단 | Silicon Nanowires-Transition Metal Selenide Nanosheets and Preparation Method Thereof |
| KR20220014565A (en) | 2020-07-29 | 2022-02-07 | 고려대학교 세종산학협력단 | Silicon Nanowires-Transition Metal Sulfide Nanosheets and Preparation Method Thereof |
| KR20230016434A (en) * | 2021-07-26 | 2023-02-02 | 고려대학교 산학협력단 | Method for fabricating nano structure and photocatalyst device using oblique angle deposition and photocatalyst device using the same method |
| KR102536110B1 (en) | 2021-07-26 | 2023-05-26 | 고려대학교 산학협력단 | Method for fabricating nano structure and photocatalyst device using oblique angle deposition and photocatalyst device using the same method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170110943A (en) | 2017-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101826413B1 (en) | Three dimensional hybrid nanostructures based materials for efficient photochemical or photoelectrochemical reaction and manufacturing method thereof | |
| Misra et al. | A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells | |
| Wang et al. | Heterostructured TiO2 nanorod@ nanobowl arrays for efficient photoelectrochemical water splitting | |
| US9394623B2 (en) | Method to fabricate vertically oriented anatase nanowires on a substrate | |
| Yu et al. | Recent advances in solar cells based on one-dimensional nanostructure arrays | |
| US8344241B1 (en) | Nanostructure and photovoltaic cell implementing same | |
| US20160071655A1 (en) | Electrochemical solar cells | |
| Sun et al. | Compound semiconductor nanowire solar cells | |
| US9559230B2 (en) | Solar cell and method for manufacturing same | |
| Hiralal et al. | Nanowires for energy generation | |
| US20100243020A1 (en) | Hybrid structures for solar energy capture | |
| KR20190102066A (en) | Methods and systems for increasing the efficiency of solar cells | |
| US20170253978A1 (en) | Photoelectrode, method for manufacturing same, and photoelectrochemical cell | |
| Thanh et al. | The CdS/CdSe/ZnS photoanode cosensitized solar cells basedon Pt, CuS, Cu2S, and PbS counter electrodes | |
| Kung et al. | Photonic fano resonance of multishaped Cu2O nanoparticles on ZnO nanowires modulating efficiency of hydrogen generation in water splitting cell | |
| JP6353066B2 (en) | Patterned electrode contacts for optoelectronic devices | |
| Gelija et al. | Integration of Ag Plasmonic Metal and WO3/InGaN Heterostructure for Photoelectrochemical Water Splitting | |
| TW201436260A (en) | Photovoltaic device and method for fabricating the same | |
| Wei et al. | Enhanced photoelectrochemical performance of bridged ZnO nanorod arrays grown on V-grooved structure | |
| JP6255417B2 (en) | Photoelectric conversion device | |
| Si et al. | Recent progress in design of plasmonic thin-film solar cells with enhanced efficiency | |
| KR101773951B1 (en) | Method for texturing of semiconductor substrate, semiconductor substrate manufactured by the method and device comprising the same | |
| KR101782351B1 (en) | Efficient photocatalytic water splitting using porous meta material photo electrode | |
| Cao et al. | Ordered array structures for efficient perovskite solar cells | |
| KR101230639B1 (en) | Solar cell and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right |