KR101818646B1 - A method for manufacturing thin films with 3-D nanoporous structure over using a baffle and thin films with 3-D nanoporous structure thereof - Google Patents
A method for manufacturing thin films with 3-D nanoporous structure over using a baffle and thin films with 3-D nanoporous structure thereof Download PDFInfo
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- KR101818646B1 KR101818646B1 KR1020150127060A KR20150127060A KR101818646B1 KR 101818646 B1 KR101818646 B1 KR 101818646B1 KR 1020150127060 A KR1020150127060 A KR 1020150127060A KR 20150127060 A KR20150127060 A KR 20150127060A KR 101818646 B1 KR101818646 B1 KR 101818646B1
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- Prior art keywords
- thin film
- substrate
- baffle
- dimensional structure
- nanoporous
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- 238000000034 method Methods 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 183
- 239000000758 substrate Substances 0.000 claims abstract description 180
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- 230000008569 process Effects 0.000 claims abstract description 102
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- 238000001816 cooling Methods 0.000 claims description 48
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 46
- 239000010949 copper Substances 0.000 claims description 38
- 229910052802 copper Inorganic materials 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 229910052763 palladium Inorganic materials 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 230000003247 decreasing effect Effects 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910010293 ceramic material Inorganic materials 0.000 claims description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000011133 lead Substances 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
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- 239000010931 gold Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052704 radon Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052754 neon Inorganic materials 0.000 claims description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 6
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000123 paper Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010944 silver (metal) Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000011148 porous material Substances 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 14
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- 239000002041 carbon nanotube Substances 0.000 description 7
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- 239000010408 film Substances 0.000 description 7
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229920000557 Nafion® Polymers 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
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- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
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- 239000003446 ligand Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
An embodiment of the present invention provides a manufacturing method of forming a nanoporous three-dimensional structure thin film on a substrate of various materials having low thermal conductivity by using a baffle when thermal deposition is performed. A method of fabricating a nanoporous three-dimensional structure thin film using a baffle according to an embodiment of the present invention includes the steps of fixing a substrate to a deposition chamber and forming a baffle (baffle) having a function of heat shielding at a predetermined position between a substrate and a heat source Forming a vacuum in the deposition chamber, injecting a process gas into the deposition chamber in a vacuum state to form an initial process pressure of the process gas, setting a temperature of the substrate to 50 ° C or lower, Forming a vapor of an evaporation material by raising the temperature of a heat source containing the evaporation material by a thermal setting process and a thermal deposition process; and (v) depositing the evaporation particles produced in the process on the substrate .
Description
The present invention relates to a method of manufacturing a nanoporous three-dimensional structure thin film using baffles, and more particularly, to a method of manufacturing a nanoporous three-dimensional structure thin film on a substrate having various thermal conductivity by using a baffle, To a manufacturing method of forming a thin film.
The nanoporous material means powder, thin film, thick film material and bulk type porous material having a pore size of nanoscale size and a porosity of 0.2-0.95. According to the IUPAC standard, micropores of 2 nm or less in pore size, mesoporous in 2 to 50 nm range, and macropores in 50 nm or more are classified. In general, nanoporous materials are collectively referred to as porous materials having a pore size in the range of 0.4 to 100 nm.
Recently, the applications of nanoporous materials have been attracting attention, such as the field of environmental pollution measurement with molecular recognition function through the selective separation and adsorption reaction of only specific substances, the chemical and biosensor fields such as biochemical reaction detection, High capacity capacitors and portable fuel cells that can maximize surface area, and low dielectric films for highly integrated devices for information and electronic applications.
Conventional methods for producing such a porous thin film include a sol gel method in which pores are formed by evaporation of an alkyl group and a solvent as metal ligands, a particle coating method in which pores are formed in a space between intrinsic pores of particles and particles, template, and then removing it to form pores.
Korean Patent No. 10-1000476, entitled "Preparation of a 3-D Porous Carbon Nanotube Thin Film Having a Mixed Pore Structure of Macro-Size Pores and Meso-Size Pores, hereinafter referred to as Prior Art 1"), carbon nanotube powder , The carbon nanotube powder is uniformly dispersed in a solvent, an anionic surfactant is added to the dispersed solution to prepare a precursor solution, and the precursor solution is electrostatically deposited using an EASP (Electrostatic Aerosol Spray Pyrolysis) Dimensional porous carbon nanotube thin film having a mixed pore structure of a macro-sized pore and a meso-sized pore, which comprises forming a carbon nanotube thin film by spraying onto a substrate and removing the anionic surfactant from the carbon nanotube thin film A manufacturing method is disclosed.
In the prior art 1, although the initial surface area is broadened by performing the heat treatment after forming the porous thin film by using the wet process, the surface area is decreased in the drying and sintering process for evaporating the solvent, Respectively.
In addition, in the prior art 1, an anionic precursor solution containing carbon nanotube powder is sprayed onto an electrically charged substrate to form a porous thin film, and thus a porous thin film is formed on a substrate of various materials such as paper, synthetic resin, Can not be formed.
The above-mentioned prior art 1 has a third problem that it releases a large amount of chemical waste, the process is complicated, the defect rate of the product is high, and mass production is difficult.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise form disclosed. There will be.
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: (i) a step of fixing a substrate to a deposition chamber, and forming a baffle having a function of heat shielding at a predetermined position between the substrate and a heat source ); (Ii) bringing the inside of the deposition chamber into a vacuum state; (Iii) injecting a process gas into the deposition chamber in a vacuum state to form an initial process pressure; (Iv) a substrate temperature setting step of setting a temperature of the substrate to 50 DEG C or lower; (V) forming a vapor of the evaporation material by raising the temperature of the heat source containing the evaporation material by a thermal evaporation process, and (vi) depositing the evaporation particles produced in the step (v) Wherein the baffle of step (i) has a function of suppressing radiation, convection and conduction of heat generated by the heat source. The present invention also provides a method of manufacturing a nanoporous three-dimensional structure thin film using the same.
In an embodiment of the present invention, a bored hole may be formed in the baffle of the step (i) for the movement of the deposition particles.
In an embodiment of the present invention, the holes may be in the shape of a circle or a polygon.
In the embodiment of the present invention, the baffle of the step (i) may be formed of one or more than three layers.
In an embodiment of the present invention, the thickness of the baffle in the step (i) may be 0.2 or more and 30 mm or less.
In an embodiment of the present invention, the baffle of the step (i) may be formed of one or more materials selected from the group consisting of metals, alloys and ceramic materials.
In the embodiment of the present invention, the baffle of the step (i) may be formed of at least one selected from the group consisting of Fe, Ti, Mo, Co, Ni, , Lead (Pb), tin (Sn), silicon (Si), chromium (Cr), zinc (Zn), copper (Cu), and aluminum (Al).
In an embodiment of the present invention, the baffle of step (i) may be at least one ceramic material selected from the group consisting of alumina, silicon nitride, silicon carbide and zirconia.
In the embodiment of the present invention, the substrate of step (i) may be formed of at least one material selected from the group consisting of paper, synthetic resin, ceramic material, glass, silicon, and metal.
In an embodiment of the present invention, the distance between the substrate and the baffle may be between 0.01 and 45 centimeters (cm) or less.
In an embodiment of the present invention, the distance between the substrate and the evaporation source may be 3 to 100 centimeters (cm) or less.
In the embodiment of the present invention, the step (iv) may be performed while the substrate is fixedly attached to the cooling part.
In an embodiment of the present invention, the deposition chamber may be provided with an exhaust port on the upper surface of the deposition chamber so that the flow of the deposition particles is formed from the evaporation source to the upper surface of the deposition chamber.
In an embodiment of the present invention, the deposition chamber may be provided with a vent at a predetermined position on one side of the deposition chamber so that the flow of the deposition particles is formed from the evaporation source to one side of the deposition chamber.
In the embodiment of the present invention, the initial process pressure in the step (iii) may be 0.01 Torr or more and 30 Torr or less.
In an embodiment of the present invention, the deposition rate of the deposition particles may be 0.01 to 10 micrometers / minute (mu m / min).
In an embodiment of the present invention, the deposition particles may be at least one selected from the group consisting of Au, Ag, Pd, Al, Cu, Cr, Fe, Mg, Mn, Ni, Ti, Zn, Pb, V, Cob, Er, Ca, Ho can be one or more metals selected from the group consisting of samarium (Sm), scandium (Sc), terbium (Tb), molybdenum (Mo), and platinum (Pt).
In the present embodiment, the (iii) step of the process gas, argon as an inert gas (Ar), nitrogen (N 2), helium (He), neon (Ne), krypton (Kr), xenon (Xe ), And radon (Rn).
In an embodiment of the present invention, the evaporated particles may be at least one selected from the group consisting of Sn, Ni, Cu, Ti, V, Cr, Mn, (Fe), cobalt (Co), zinc (Zn), molybdenum (Mo), tungsten (W), silver (Ag), gold (Au), platinum (Pt), iridium (Ir), ruthenium Li, Al, Al, Sb, Bi, Mg, Si, In, Pb and Pd. May be one or more metal oxides.
In the embodiment of the present invention, the nanoporous three-dimensional structure thin film formed of the metal oxide may be formed of any one material selected from the group consisting of tungsten (W), molybdenum (Mo), and tantalum (Ta) . ≪ / RTI >
In an embodiment of the invention, wherein (iii) the process gas in step is, argon as an inert gas (Ar), nitrogen (N 2), helium (He), neon (Ne), krypton (Kr), xenon ( Xe) and radon (a mixture of one or more gas and oxygen (O 2) is selected from the group consisting of Rn), the oxygen (O 2) functions to ensure the stability of the composition control, and the oxidation state of the metal oxide can do.
In the embodiment of the present invention, the evaporation particles in the step (v) may be formed by a thermal evaporation method or a sputtering method.
In the step (vi) of the present invention, at least one of the type of the process gas in the deposition chamber, the process pressure, the temperature of the substrate, the distance between the substrate and the evaporation source, To vary the energy and size of the deposited particles, thereby forming a density gradient inward of the thin film thickness within the nanoporous three-dimensional structure thin film.
In the embodiment of the present invention, the process pressure in the step (vi) is gradually increased or decreased with time so that the relative density is increased in the outward direction of the thin film thickness within the nanoporous three-dimensional structure thin film It can be gradually reduced or increased.
In an embodiment of the present invention, the process pressure in the step (vi) is discretely increased or decreased with time so that the relative density within the nanoporous three-dimensional structure thin film outside the thin film thickness Layer structure that is discretely reduced or increased in the direction of the thickness direction.
According to an aspect of the present invention, there is provided a method of manufacturing a nanoporous three-dimensional structure thin film using baffles, wherein a specific surface area value is 0.1 to 600 m 2 / g The present invention provides a nanoporous three-dimensional structure thin film which is characterized in that
In an embodiment of the present invention, the density ratio (in terms of bulk) of the nanoporous three-dimensional structure thin film may be 0.01 to 90%.
In an embodiment of the present invention, the nanoporous three-dimensional structure thin film may include a mesopore having a diameter of 1.0 to 100 nanometers (nm).
In an embodiment of the present invention, the nanoporous three-dimensional structure thin film comprises a mesopore having a diameter of 1.0 to 100 nanometers (nm) and a macropore having a diameter of 0.5 micrometers or more And the like.
According to an aspect of the present invention, there is provided a nanoporous three-dimensional structure electrode for use in a gas sensor, a biosensor, a battery, a capacitor, a fuel cell, a solar cell, a chemical catalyst, Wherein the nanoporous three-dimensional structure thin film of the present invention is formed on the surface of the porous electrode.
According to an aspect of the present invention, there is provided a deposition apparatus including: a deposition chamber capable of being in a vacuum state; An evaporation source located at a lower end of the deposition chamber and supplying thermal energy to the deposition material; A cooling unit positioned at an upper end of the deposition chamber and in which the substrate is fixed and cooled; A baffle disposed between the evaporation source and the substrate and having a plurality of holes through which the deposition particles pass, and a baffle disposed on the upper surface of the deposition chamber, wherein the flow of the deposition particles is formed from the evaporation source to the upper surface of the deposition chamber Wherein at least one of a type of a process gas in the deposition chamber, a process pressure, a temperature of the substrate, a distance between the substrate and the evaporation source, and a heating temperature of the deposition particles is changed with time Wherein the energy and size of the deposited particles are varied.
In an embodiment of the present invention, the baffle may be formed of one or more than three layers.
In the embodiment of the present invention, a plurality of baffles may be provided between the evaporation source and the substrate.
The present invention relates to a method of forming a dry thin film by vapor deposition, which does not require a separate drying and sintering process, thereby preventing a decrease in porosity and ensuring durability of a nano-porous three-dimensional structure, The side surface and the reactive side (specific surface area) between the side surface and the external material can be simultaneously improved.
Further, the present invention does not require the substrate to be charged, and it is possible to form a thin film of a nanoporous three-dimensional structure on the surface of a substrate at a low temperature by a thermal deposition process, and thus various materials such as paper, synthetic resin, The second effect is obtained.
Further, the present invention has the third effect that, in particular, the particles of the evaporation material are distributed uniformly on the surface of the substrate with respect to the substrate having a low thermal conductivity, and the deposition rate of the evaporation material particles is also improved.
The present invention has the fourth effect that the chemical waste can be minimized and the porous thin film can be formed by a single process of vapor deposition to simplify the process and enable mass production.
It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the configuration of the invention described in the claims.
1 is a schematic view of a deposition chamber of a nanoporous three-dimensional structure thin film according to an embodiment of the present invention.
2 is another schematic diagram of a deposition chamber of a nanoporous three-dimensional structure thin film according to an embodiment of the present invention.
3 is a plan view of the shape of a baffle according to an embodiment of the present invention.
4 is a schematic diagram of the deposition particle flow within a deposition chamber of a nanoporous three-dimensional structure thin film according to an embodiment of the present invention in the absence of a baffle.
FIG. 5 is a schematic diagram of the deposition particle flow within a deposition chamber of a nanoporous three-dimensional structure thin film according to an embodiment of the present invention in the presence of a baffle. FIG.
FIG. 6 is a schematic view showing an embodiment in which the nanoporous three-dimensional structure of the present invention has a gradual density gradient in the thickness direction of the thin film.
7 is a schematic view showing another embodiment in which the thin film of the nanoporous three-dimensional structure of the present invention has a gradual density gradient in the thin film thickness direction.
8 is a schematic view showing an embodiment in which the nanoporous three-dimensional structure thin film of the present invention has a discrete density gradient in the thickness direction of the thin film.
FIG. 9 is a schematic view showing another embodiment in which the nanoporous three-dimensional structure thin film of the present invention has a discrete density gradient in the thin film thickness direction.
10 is a SEM image of a thin film of a nanoporous three-dimensional structure formed on a silicon wafer substrate at a cooling temperature of 23 ° C according to an embodiment of the present invention.
11 is a SEM image of a thin film of a nanoporous three-dimensional structure formed on a silicon wafer substrate at a cooling temperature of 3 ° C according to an embodiment of the present invention.
12 is an image of a nanoporous three-dimensional structure copper thin film formed on a silicon wafer substrate through an embodiment of the present invention.
13 is an SEM image of a nanoporous three-dimensional structure copper thin film formed on a silicon wafer substrate through an embodiment of the present invention.
14 is an image of a nanoporous three-dimensional structure copper thin film formed on a glass substrate under a process pressure of 0.1 Torr according to an embodiment of the present invention.
15 is an image of a nanoporous three-dimensional structure copper thin film formed on a glass substrate under a process pressure of 0.2 Torr through an embodiment of the present invention.
16 is an image of a nanoporous three-dimensional structure copper thin film formed on a glass substrate under a process pressure of 0.5 Torr through an embodiment of the present invention.
17 is an image of a nanoporous three-dimensional structure copper thin film formed on a glass substrate under a process pressure of 1 Torr according to an embodiment of the present invention.
18 is an image of a nanoporous three-dimensional structure copper thin film formed on a glass substrate under a process pressure of 5 Torr according to an embodiment of the present invention.
19 is an image of a nanoporous three-dimensional structure copper thin film formed on a paper substrate through an embodiment of the present invention.
20 is an image of a nanoporous three-dimensional structure copper thin film formed on a polyimide film (PI film) substrate according to an embodiment of the present invention.
21 is an image of a nanoporous three-dimensional structure copper thin film formed on an alumina (Al 2 O 3 ) substrate through an embodiment of the present invention.
22 is an image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) without using a baffle under a process pressure of 1 Torr according to an embodiment of the present invention.
23 is another image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) using a baffle under a process pressure of 1 Torr according to an embodiment of the present invention.
24 is an image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) using a baffle under a process pressure of 5 Torr according to an embodiment of the present invention.
25 is an image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) when a process according to an embodiment of the present invention is repeated.
26 is an SEM image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) when the process according to an embodiment of the present invention is repeated.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.
Throughout the specification, when a part is referred to as being "connected" (connected, connected, coupled) with another part, it is not only the case where it is "directly connected" "Is included. Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of a
(The flow of thermal energy is represented by the arrows in Fig. 1 and Fig. 2, and the flow of the deposited particles is represented by the arrows in Fig. 4 and Fig. 5).
1 to 5, a method of manufacturing a nanoporous three-dimensional structure thin film using a
First, the
At this time, the
Here, a
The
In addition, the
The
The
The
The thickness of the
The thickness of the
In this thickness range, the
However, if the
The
Since the
The
The
The distance between the
If the distance between the
At this time, a plurality of
The distance between the
If the distance between the
Second, the inside of the
The vacuum evacuation process is performed by using a vacuum pump or the like and does not necessarily require a complete vacuum. In order to prevent the oxidation of the metal when forming a porous metal thin film, an initial vacuum degree of 10 -5 Torr or more May be desirable.
Third, a process gas may be injected into the
Here, the initial process pressure may be 0.01 Torr or more and 30 Torr or less.
If the initial process pressure is less than 0.01 Torr, the thin film may be densely formed and pores may not be formed in the thin film. If the initial process pressure is more than 30 Torr, it may be difficult to maintain the structure and size uniformity of the large- have. Because under the process pressure exceeding 30 Torr, the deposited particles may experience excessive collision until reaching the
The process gas may be at least one gas selected from among argon (Ar), nitrogen (N 2 ), helium (He), neon (Ne), krypton (Kr), xenon (Xe), and radon have. However, the present invention is not limited thereto as long as it is a gas which does not react with the deposition particles. In particular, when the porous thin film material to be formed is an oxide, oxygen may be used in addition to an inert gas in order to secure stability of the oxidation state. Accordingly, the process gas is selected from the group consisting of argon (Ar), nitrogen (N 2 ), helium (He), neon (Ne), krypton (Kr), xenon (Xe) and radon and at least one mixture of a gas and the oxygen (O 2), oxygen (O 2) it may perform the function of securing the component, and control stability of the oxidation state of the metal oxide.
Fourth, the temperature of the
At this time, the
In order to improve the uniformity of the nanoporous three-dimensional structure in the
In order to keep the temperature of the
The
In the embodiment of the present invention, it is explained that the
Fifth, by the thermal deposition process, the temperature of the
At this time, the deposited particles may be at least one selected from the group consisting of Au, Ag, Pd, Al, Cu, Cr, Fe, Mg, (Ni), titanium (Ti), zinc (Zn), lead (Pb), vanadium (V), cobalt (Co), erbium (Er), calcium (Ca), holmium (Ho) , Scandium (Sc), terbium (Tb), molybdenum (Mo), and platinum (Pt).
The deposited particles may be at least one selected from the group consisting of Sn, Ni, Cu, Ti, V, Cr, Mn, Fe, (Ag), gold (Au), platinum (Pt), iridium (Ir), ruthenium (Ru), lithium (Li), aluminum (Al), zinc (Zn), molybdenum (Mo), tungsten , Oxides of antimony (Sb), bismuth (Bi), magnesium (Mg), silicon (Si), indium (In), lead (Pb) and palladium (Pd) have.
The deposited particles may be ceramic materials such as alumina, silicon nitride, silicon carbide, and zirconia, or a ceramic composite material using them.
The formation of the deposited particles can be performed by a thermal evaporation method or a sputtering method.
Especially, when a thermal evaporation method is used, a crucible, a coil type heater using a coil heater, a spiral type heater using a spiral coil, a boat type heater, or the like can be used as a container of the heater. The material of the container of the heater is tungsten W), molybdenum (Mo), and tantalum (Ta). In particular, a boat coated with a ceramic such as alumina may be used as needed, and a crucible formed of a ceramic can be used.
The nanoporous three-dimensional structure thin film formed of the metal oxide may include any material selected from the group consisting of tungsten (W), molybdenum (Mo), and tantalum (Ta) as the material of the evaporation source (300).
Tungsten (W), molybdenum (Mo), tantalum (Ta) or the like used as the material of the evaporation source (300) has a low vapor pressure and is not deposited well. However, when the metal oxide is deposited, the oxygen contained in the metal oxide reacts with the material of the
Sixth, the deposition particles generated in the fifth stage can be deposited on the
At this time, the
4 and 5, when the
In addition, the
When the direction of the exhaust gas is changed to control the gas flow in the
The deposition rate of the deposited particles may be 0.01 to 10 micrometers / minute (mu m / min).
If the deposition rate of the deposited particles is less than 0.01 micrometers / minute (mu m / min), the productivity is too low. If it exceeds 10 micrometers / minute (mu m / min) And the formed nanostructure may be damaged due to heat.
FIG. 6 is a schematic view showing an embodiment in which the thin film of nanoporous three-dimensional structure of the present invention has a gradual density gradient in the thickness direction of the thin film, FIG. 7 is a thin film of the nanoporous three-dimensional structure of the present invention, FIG. 8 is a schematic view showing an embodiment in which the thin film of the nanoporous three-dimensional structure of the present invention has a discrete density gradient in the thin film thickness direction.
At least one of the type of process gas in the
As shown in FIGS. 6 and 7, the process pressure gradually increases or decreases with time, so that within the nanoporous three-dimensional structure thin film, the relative density gradually decreases or increases in the outward direction of the thin film thickness .
As shown in FIG. 8, the process pressure is increased or decreased discretely with time, so that within the nanoporous three-dimensional structure thin film, the relative density decreases or increases discretely in the outward direction of the thin film thickness It is possible to have a multilayer structure.
Here, the density is the distribution density of the nanoporous three-dimensional structure thin film, and quantitatively it can be represented by the density of the bulk material and the relative density of the nanoporous three-dimensional structure thin film. If the porosity is large, the relative density is low (low), so that the contact area between the
In implementing a density gradient having a predetermined pattern in the nanoporous three-dimensional structure thin film, both the direction of the gradient and the continuity of the gradient can be considered.
In the direction of the density gradient of the nanoporous three-dimensional structure thin film, the distribution density in the nanoporous three-dimensional structure thin film can be increased or decreased in the outward direction of the thin film thickness. In the former case, since the pore density of the nanoporous three-dimensional structure thin film near the
Furthermore, it is possible to realize a complex gradient as well as a single direction within the nanoporous three-dimensional structure thin film. Specifically, the relative density may be increased again from the dense to the scarce in the outward direction of the thin film thickness, and conversely, the relative density may be decreased from the small diameter to the small diameter in the outward direction of the thin film thickness . The direction of the gradient can be determined in consideration of adhesion between the
Further, in the continuity of the gradient, if the process pressure is gradually increased or decreased with time, the gradient of the relative density of the nanoporous three-dimensional structure thin film may gradually decrease or increase toward the outside of the thin film thickness . An embodiment of the present invention having such a configuration is shown in Figs. 6 and 8. Fig. On the other hand, in changing the process pressure, if a constant process pressure P1 is continuously applied for a predetermined time and then a certain process pressure P2 of a different size is applied for a predetermined period of time - a discretely pattern , The nanoporous three-dimensional structure thin film can have a kind of multilayer structure in which the gradient of the pore density is discretely changed (discontinuously) in the outward direction of the thin film thickness. An embodiment of the present invention having such a configuration is shown in Figs. 7 and 9. Fig. However, it should be noted that when the pore density of each layer constituting the multi-layer structure is excessively large, peeling may occur at the interface between the layers, or a corresponding layer may not be formed.
Next, the nanoporous three-dimensional structure thin film of the present invention will be described.
The nano-porous three-dimensional structure thin film may have a specific surface area value of 0.1 to 600 m 2 / g.
If the specific surface area value is less than 0.1 m 2 / g, there is a disadvantage in that the advantage of the nano-porous three-dimensional structure thin film such as highly dense and highly reactive disappears, and when it exceeds 600 m 2 / g, It is impossible to secure a stable bonding force between particles forming the porous thin film, which may cause a problem in the durability of the porous thin film.
The density ratio (in terms of bulk) of the nanoporous three-dimensional structure thin film may be 0.01 to 90%.
When the density ratio is less than 0.01%, the performance such as adhesion with the
The nanoporous three-dimensional structure thin film may include a mesopore having a diameter of 1.0 to 100 nanometers (nm), and may also include mesopores having a diameter of 1.0 to 100 nanometers (nm) (Macropores) of not less than 0.5 micrometers (占 퐉). The feature of the coexistence of micro-sized and nano-sized pores may be a unique characteristic realized only in the nanoporous three-dimensional structure thin film produced by the thermal evaporation process proposed in the present invention.
The nanoporous three-dimensional structure thin film of the present invention can be applied to various applications such as a gas sensor, a biosensor, a battery, a capacitor, a fuel cell, a solar cell, a chemical catalyst, and an antibacterial filter.
Below, a description will be given of a nano-porous three-dimensional structure manufacturing equipment using a baffle.
As shown in FIG. 1, the nano-porous three-dimensional structure manufacturing equipment using a baffle includes a
The apparatus for manufacturing a nanoporous three-dimensional structure using baffles is characterized in that the type of the process gas inside the
Accordingly, as described above, a nanoporous three-dimensional structure having different density gradients can be formed according to various uses.
The
The
However, if the
A plurality of
When a plurality of baffles in which the
Hereinafter, examples will be described.
[Example 1]
Silver (Ag) was selected as the deposition material, and a silicon wafer (Si wafer) of 4 X 4 inches (inches) was selected as the
(Table 1)
As shown in Table 1, the silicon wafer was uniformly deposited on the
It is confirmed that the effect of the
FIG. 10 is a SEM image of a thin film of a nanoporous three-dimensional structure formed on a silicon wafer substrate at a cooling temperature of 23 ° C. according to an embodiment of the present invention. FIG. The nanoporous three-dimensional structure formed on the silicon wafer substrate is an SEM image of the thin film. 10A is an SEM image for a case where there is no baffle, and FIG. 10B is an SEM image for a case where a baffle is present. SEM image, and FIG. 11 (b) is an SEM image for the case of a baffle).
As shown in the SEM images of FIGS. 10 and 11, it was confirmed that a similar nanoporous three-dimensional structure was formed in all cases regardless of the presence or absence of the baffle.
[Example 2]
Copper (Cu) was selected as the deposition material, and a silicon wafer (Si wafer) of 2 X 2 cm (centimeter) was selected as the
12 is an image of a nanoporous three-dimensional structure copper thin film formed on a
As shown in FIGS. 12 and 13, in the case of the
This is because the thermal conductivity of the
[Example 3]
Copper (Cu) was selected as the deposition material and a
14 is an image of a nanoporous three-dimensional structure copper thin film formed on a
The average deposition amount obtained by dividing the total deposition amount of the four
15 is an image of a nanoporous three-dimensional structure copper thin film formed on a
The average deposition amount obtained by dividing the total deposition amount for the four
16 is an image of a nanoporous three-dimensional structure copper thin film formed on a
The average deposition amount obtained by dividing the total deposition amount of the four
As shown in FIGS. 14 (a), 15 (a) and 16 (a), when the
As shown in FIGS. 14 (b), 15 (b) and 16 (b), when the
As a result, when the
17 is an image of a nanoporous three-dimensional structure copper thin film formed on a
The average deposition amount obtained by dividing the total deposition amount of the four
18 is an image of a nanoporous three-dimensional structure copper thin film formed on a
The average deposition amount obtained by dividing the total deposition amount of the four
As shown in FIGS. 17A and 18A, when the
As shown in FIGS. 17B and 18B, when the
In conclusion, when depositing the
[Example 4]
Copper (Cu) is selected as an evaporation material, and a
19 is an image of a nanoporous three-dimensional structure copper thin film formed on a
20 is an image of a nanoporous three-dimensional structure copper thin film formed on a polyimide film (PI film)
FIG. 21 is an image of a nanoporous three-dimensional structure copper thin film formed on an alumina (Al 2 O 3 )
The
[Example 5]
Palladium (Pd) was selected as the deposition material, and a GDL (Gas Diffusion Layer) having a thickness of 0.15 mm (millimeter) was selected as the
22 is an image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) without using the
23 is another image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) using the
24 is another image of a nanoporous three-dimensional structure palladium (Pd) thin film deposited on a GDL (Gas Diffusion Layer) using the
The GDL (Gas Diffusion Layer / Carbon paper) does not transfer heat to the
22 (a) and 22 (b), the evaporation efficiency can be partially improved when the temperature of the
22 (b) and 23 (a), when the
As shown in FIG. 24, it can be seen that the effect of using the
As a result, it was confirmed that the
FIG. 25 is an image of a nanoporous three-dimensional structure film deposited on a GDL (Gas Diffusion Layer) when a process according to an embodiment of the present invention is repeated, and FIG. 26 is a view SEM image of the nanoporous three-dimensional structure palladium (Pd) film deposited on GDL (Gas Diffusion Layer).
Using the
It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.
The scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.
100: baffle
110: hole
200: substrate
300: evaporation source
400: deposition chamber
410: Exhaust
420: gas inlet
500: cooling section
510: Cooling chuck
Claims (33)
(I) fixing a substrate to a deposition chamber, and installing a baffle having a function of heat shielding at a predetermined position between the substrate and a heat source, in a range of 1 to 3 layers;
(Ii) bringing the inside of the deposition chamber into a vacuum state;
(Iii) injecting a process gas, which is an inert gas, into the deposition chamber in a vacuum state to form an initial process pressure within the deposition chamber at a pressure of 0.01 Torr or more and 30 Torr or less;
(Iv) a substrate temperature setting step of setting the temperature of the substrate to be uniformly maintained at 50 DEG C or less;
(V) forming a vapor of the evaporation material by raising a temperature of the heat source containing the evaporation material by a thermal deposition process; And
(Vi) depositing the deposited particles produced in step (v) on the substrate at a deposition rate of 0.01 to 10 micrometers / minute (占 퐉 / min);
, ≪ / RTI >
The baffle of the step (i) has a function of suppressing radiation, convection and conduction generated by the heat source,
The distance between the substrate and the evaporation source is not less than 3 but not more than 100 centimeters (cm)
A hole is formed in the baffle for the movement of the deposition particles, the total area of the holes relative to the area of the baffle is 0.1 to 70%
The distance between the substrate and the baffle is between 0.01 and 45 centimeters (cm)
The process pressure is gradually increased or decreased with time so that the relative density is gradually decreased or increased in the outward direction of the thin film thickness within the nanoporous three-dimensional structure thin film,
Alternatively, by increasing or decreasing the process pressure discretely with time, the relative density is discretely reduced or increased in the outward direction of the thin film thickness inside the nanoporous three-dimensional structure thin film, The porous three-dimensional structure thin film has a multilayer structure,
Wherein the adhesion between the substrate and the nanoporous three-dimensional structure thin film is controlled.
Wherein the hole is in the shape of a circle or a polygon.
Wherein the thickness of the baffle in step (i) is 0.2 to 30 millimeters (mm) or less.
Wherein the baffle of step (i) is formed of at least one material selected from the group consisting of a metal, an alloy, and a ceramic material.
The baffle of the step (i) may be at least one selected from the group consisting of Fe, Ti, Mo, Co, Ni, W, Ber, Pb, Wherein the baffle is made of at least one metal selected from the group consisting of silicon (Si), silicon (Si), chromium (Cr), zinc (Zn), copper (Cu) A method for producing a thin film.
Wherein the baffle of step (i) is made of at least one ceramic material selected from the group consisting of alumina, silicon nitride, silicon carbide, and zirconia.
Wherein the substrate of step (i) is formed of at least one material selected from the group consisting of paper, synthetic resin, ceramic material, glass, silicon and metal.
Wherein the distance between the substrate and the baffle is in the range of 0.01 to 45 centimeters (cm) or less.
Wherein the step (iv) is performed by fixing the substrate to the cooling part in close contact with the cooling part.
Wherein the deposition chamber is provided with an exhaust port on the upper surface of the deposition chamber so that the flow of the deposition particles is formed from the evaporation source to the upper surface of the deposition chamber. .
Wherein the deposition chamber is provided with an exhaust port at a predetermined position on one side of the deposition chamber so that the flow of the deposition particles is formed from the evaporation source to one side of the deposition chamber. ≪ / RTI >
The deposition particles may be at least one selected from the group consisting of Au, Ag, Pd, Al, Cu, Cr, Fe, Mg, (Ni), Ti, Zn, Pb, V, Co, Er, Ca, Wherein the thin film is made of at least one metal selected from the group consisting of scandium (Sc), terbium (Tb), molybdenum (Mo), and platinum (Pt).
The process gas of step (iii) may be selected from among argon (Ar), nitrogen (N 2 ), helium (He), neon (Ne), krypton (Kr), xenon (Xe) and radon Wherein the at least one gas is one or more gases.
The deposited particles may be at least one selected from the group consisting of Sn, Ni, Cu, Ti, V, Cr, Mn, Fe, (Ag), gold (Au), platinum (Pt), iridium (Ir), ruthenium (Ru), lithium (Li), aluminum (Al) And at least one metal oxide selected from the group consisting of antimony (Sb), bismuth (Bi), magnesium (Mg), silicon (Si), indium (In), lead (Pb) and palladium (Pd) A method for manufacturing a nanoporous three-dimensional structure thin film using baffles.
Wherein the nanoporous three-dimensional structure thin film formed of the metal oxide includes any one material selected from the group consisting of tungsten (W), molybdenum (Mo), and tantalum (Ta) Method for fabricating nanoporous three dimensional structure thin film using.
The process gas at said (iii) step, with argon as the inert gas (Ar), nitrogen (N 2), helium (He), neon (Ne), krypton (Kr), xenon (Xe) and radon (Rn) (0 2 ) is a mixture of at least one gas selected from the group consisting of oxygen and oxygen (0 2 ), and the oxygen (0 2 ) performs the function of controlling the component of the metal oxide and securing the stability of the oxidation state. A method for manufacturing a porous three-dimensional structure thin film.
The method for producing a nanoporous three-dimensional structure thin film using a baffle according to (v), wherein the deposition particles are produced by a thermal evaporation method or a sputtering method.
Wherein the specific surface area value is produced by a method according to any one of claims 1, 3, 5 to 10, 12 to 14, and 17 to 22, wherein the specific surface area value is 0.1 to 600 m 2 / g. ≪ / RTI >
Wherein the nano-porous three-dimensional structure thin film has a density ratio (in terms of bulk) of 0.01 to 90%.
Wherein the nanoporous three-dimensional structure thin film comprises mesopores having a diameter of 1.0 to 100 nanometers (nm).
The nanoporous three-dimensional structure thin film has a network including mesopores having a diameter of 1.0 to 100 nanometers (nm) and macropores having a diameter of 0.5 micrometers or more A nanoporous three-dimensional structure thin film.
A deposition chamber in which an initial process pressure of 0.01 Torr or more and 30 Torr or less is formed inside the chamber when the process gas as an inert gas is injected and the substrate is fixed therein;
An evaporation source located at a lower end of the deposition chamber and supplying thermal energy to the deposition material;
A cooling unit positioned at an upper end of the deposition chamber and in which the substrate is fixed and cooled;
A baffle disposed between the evaporation source and the substrate for the function of heat shielding, the baffle being provided in one or more than three layers and having a plurality of holes through which the deposition particles pass; And
An exhaust port which is located on an upper surface of the deposition chamber and discharges the deposited particles from the evaporation source to the upper surface of the deposition chamber so as to minimize the amount of deposited particles immediately discharged to the substrate;
And,
The temperature of the substrate is set to be uniformly maintained at 50 DEG C or less,
The deposited particles are deposited on the substrate at a deposition rate of 0.01 to 10 micrometers per minute ([mu] m / min)
The distance between the substrate and the evaporation source is not less than 3 but not more than 100 centimeters (cm)
The total area of the holes relative to the area of the baffle is in a range of 0.1 to 70%
The distance between the substrate and the baffle is between 0.01 and 45 centimeters (cm)
The energy and size of the deposited particles are changed by changing at least one of the type of the process gas inside the deposition chamber, the process pressure, the temperature of the substrate, the distance between the substrate and the evaporation source, And,
The process pressure is gradually increased or decreased with time so that the relative density is gradually decreased or increased in the outward direction of the thin film thickness within the nanoporous three-dimensional structure thin film,
Alternatively, by increasing or decreasing the process pressure discretely with time, the relative density is discretely reduced or increased in the outward direction of the thin film thickness inside the nanoporous three-dimensional structure thin film, The porous three-dimensional structure thin film has a multilayer structure,
Wherein the adhesion between the substrate and the nanoporous three-dimensional structure thin film is controlled.
Wherein the baffle is formed of one or more than three layers. The apparatus for manufacturing a nanoporous three-dimensional structure thin film using a baffle.
Wherein a plurality of baffles are provided between the evaporation source and the substrate.
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| KR101000476B1 (en) * | 2008-05-29 | 2010-12-14 | 연세대학교 산학협력단 | Fabrication of Carbon Nanotube Thin Film with Macroporous and Mesoporous Structure |
| WO2014027778A1 (en) * | 2012-08-13 | 2014-02-20 | 한국표준과학연구원 | Evaporation deposition apparatus |
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| WO2014027778A1 (en) * | 2012-08-13 | 2014-02-20 | 한국표준과학연구원 | Evaporation deposition apparatus |
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