KR101793385B1 - LED package and LED module comprising the same - Google Patents

Abstract

The present invention provides an LED package providing wavelength conversion parts having different correlated color temperature (CCT) properties (hereinafter, referred to as color temperature property) on an upper part and a side part of a light emitting diode chip. Disclosed is an LED module. The LED module comprises: a substrate; and at least two LED packages disposed on the substrate. At least one LED package among the LED packages includes: an LED chip providing an upper surface, a bottom surface, and side surfaces; a side surface wavelength conversion part formed with a first wavelength conversion material forming light of a first color temperature on the side surface of the LED chip; and an upper surface wavelength conversion part formed on the upper surface of the LED chip with a second wavelength conversion material of a second color temperature different from the first wavelength conversion material of the first color which is formed on the side surface of the LED chip.

Description

[0001] The present invention relates to an LED package and an LED module including the LED package.

The present invention relates to an LED package and an LED module, and more particularly, to an LED package including wavelength conversion parts having different correlated color temperature (CCT) characteristics on the upper and the side of an LED chip, To an LED module which can be controlled by various CCTs.

White light sources using LEDs are well known. However, existing LED white light sources have problems of low CCT and color rendering defects caused by the absence of specific color components (red). As is well known, the CCT of a white light source is determined by comparing a theoretically heated black-body radiator with its hue. CCT is represented by Calvin (K), which corresponds to the temperature of a blackbody radiator emitting white light of the same hue as the light source.

The sunlight of the outdoors at noon on a clear day is 5,500K, and in the case of direct sunlight in the summer of noon, it is about 5,700K. Therefore, in the case of approximately 5,200K, it can be said that it is a light source close to sunlight.

Conventionally, a combination of LEDs emitting relatively low CCT warm white light around 3000K and LEDs emitting relatively cool CCT white light of about 7000K, An LED module for controlling the CCT has been proposed.

The worm white LED and the cool white LED are generally formed of a combination of a light emitting diode chip and a phosphor. However, conventionally, since the CCT of the white light is adjusted only by the selective combination of the warm white LEDs and the cool white LEDs, the CCT control range is limited.

There is therefore a need in the art for an LED package that can be used to increase the CCT tuning range width of white light.

PCT / US2008 / 056606 (Dec. 09, 2009)

SUMMARY OF THE INVENTION An object of the present invention is to provide an LED package having wavelength conversion parts having different CCT characteristics (hereinafter referred to as color temperature characteristics) at the top and side of an LED chip.

Another object of the present invention is to provide an LED module capable of increasing a CCT control range width of white light by combining an LED package having wavelength converters having different CCT characteristics with another LED package.

An LED module according to an aspect of the present invention includes: a substrate; And at least two LED packages disposed on the substrate, wherein at least one of the LED packages includes an LED chip having an upper surface, a bottom surface, and side surfaces, A side waveguide formed on a side surface of the LED chip, the side waveguide being formed of a first wavelength conversion material that forms light of a first color temperature; and a second wavelength conversion material formed on a side of the LED chip, And a top surface wavelength converting part formed on the top surface of the LED chip as a second wavelength converting material at a color temperature.

According to one embodiment, the first color temperature and the second color temperature are different by at least 2000K.

According to one embodiment, the LED packages may include a cool-white upper-surface wavelength conversion unit for generating cool-white light from the upper surface of the LED chip, and a warm-white side wavelength conversion unit for generating warm- .

According to one embodiment, the LED packages include a cool-white side wavelength conversion unit for generating cool-white light on the side of the LED chip, and a warm white top-surface wavelength conversion unit for generating warm white light on the upper surface of the LED chip. Package.

According to one embodiment, the LED packages include a first LED package including a cool white side wavelength conversion section and a cool white top side wavelength conversion section, a second LED package including a cool white top wavelength conversion section and a warm white side wavelength conversion section, And a third LED package including a warm white wavelength conversion section and a cool white side wavelength conversion section and a fourth LED package including a warm white top wavelength conversion section and a warm white side wavelength conversion section, And the fourth LED package, and at least one LED package among the second LED package and the third LED package.

According to one embodiment, the first LED package is disposed at an outer perimeter within the array of LED packages, the fourth LED package is disposed at the center of the array of LED packages, And the third LED package is disposed adjacent to the fourth LED package between the outer periphery and the center.

According to one embodiment, the fourth LED package is disposed at an outer perimeter within the array of LED packages, the first LED package is disposed in the center of the array of LED packages, The first LED package being disposed adjacent the fourth LED package between the centers and the first LED package being disposed adjacent to the first LED package between the enclosure and the center.

According to one embodiment, the LED packages are grouped and grouped into a plurality of LED groups on the substrate, wherein each of the plurality of LED groups comprises the first LED package, the second LED package, And the fourth LED package.

According to one embodiment, the first LED package, the second LED package, the third LED package, and the fourth LED package are operated independently of each other.

According to one embodiment, the substrate comprises a first electrode pair, a second electrode pair, a third electrode pair and a fourth electrode pair, wherein the first LED package, the second LED package, the third LED package, Each of the fourth LED packages is individually connected to the first electrode pair, the second electrode pair, the third electrode pair, and the fourth electrode pair.

According to one embodiment, the substrate includes a first electrode pair, a second electrode pair and a third electrode pair, wherein each of the first LED package and the fourth LED package includes a first electrode pair and a third electrode pair, And the second LED package and the third LED package are connected to the second electrode pair and are operated together.

According to one embodiment, the LED chip includes a structure in which the first conductive type electrode pad and the second conductive type electrode pad are provided on the bottom surface and connected to the first and second electrodes on the bottom surface side.

According to another aspect of the present invention, there is provided an LED chip having an upper surface, a bottom surface, and side surfaces and emitting light of 250 nm to 480 nm; A side wavelength converter formed on the side surface of the LED chip, the side wavelength converter comprising a first wavelength conversion material forming light of a first color temperature; And a top wavelength conversion unit formed on a top surface of the LED chip with a second wavelength conversion material of a second color temperature different from the first wavelength conversion material of the first color temperature formed on a side surface of the LED chip.

According to one embodiment, the side waveguide conversion unit and the top waveguide conversion unit include a combination of different kinds of phosphors or different phosphors.

According to one embodiment, the side waveguide conversion unit is formed to have a height equal to or less than the height of the LED chip in contact with a side surface of the LED chip, the translucent resin including at least one phosphor.

According to one embodiment, the upper surface wavelength converting portion is formed by a translucent resin including at least one phosphor, which is in contact with the upper surface of the LED chip.

According to an embodiment, the LED package may include a first conductive type electrode pad and a second conductive type electrode pad provided on the bottom surface of the LED chip by a first solder bump and a second solder bump at the bottom surface of the LED chip, And a second electrode connected to the second electrode.

According to one embodiment, the LED chip includes a sapphire substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially from top to bottom, and the first conductive semiconductor layer The first conductive type electrode pad is formed in the second conductive type semiconductor layer region, and the second conductive type electrode pad in the second conductive type semiconductor layer region is formed.

According to an embodiment of the present invention, the side waveguide conversion unit is formed in contact with at least sides of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, and the top wavelength conversion unit is formed in contact with the sapphire substrate .

According to still another aspect of the present invention, there is provided a method of manufacturing a light emitting diode, comprising: forming a first partition wall which entirely surrounds a side surface of an LED chip; Filling a space between a side surface of the LED chip and the first barrier rib with a resin including a first phosphor to form a lateral wavelength conversion portion; Removing the primary barrier ribs; Forming a second barrier rib in contact with a side surface of the side waveguide conversion section and having a height greater than that of the LED chip and the side waveguide conversion section;

And forming a top surface wavelength converting portion by filling a resin including a second phosphor different from the first phosphor into an upper space formed in the upper portion of the LED chip by the secondary barrier ribs.

 According to an embodiment, the step of forming the side waveguide transformer causes the resin containing the first phosphor to expand between the bottom surface of the LED chip and the substrate on which the LED chip is mounted.

According to an embodiment of the present invention, in the step of forming the primary barrier rib, the primary barrier rib is formed to have a cross section extending below the bottom surface of the LED chip. In the forming of the side waveguide, A side wave-length converting unit that covers only the side surface of the LED chip is formed.

According to the present invention, there is provided an LED package having wavelength converters having different CCT characteristics (or color temperature characteristics), and by combining the LED package with another LED package to realize an LED module, The width can be greatly increased. This enables the implementation of white light in almost all color temperature regions that have not been realized in conventional LED lighting.

The present invention can be usefully used in LED bulbs, LED candles, LED decoration lamps or various other types of LED lighting.

1 is a perspective view illustrating a chip scale LED package according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a chip scale LED package according to an embodiment of the present invention.
3A to 3G are views for explaining a method of manufacturing a chip scale LED package according to an embodiment of the present invention.
Fig. 4 is a view for explaining another example of the process shown in Figs. 3A and 3B.
5 is a view showing four kinds of LED packages applied to the LED module according to the present invention.
FIG. 6 is a view for explaining a first embodiment of an LED module using four types of LED packages shown in FIG.
FIG. 7 is a view for explaining a second embodiment of the LED module using the four kinds of LED packages shown in FIG.
FIG. 8 is a view for explaining a third embodiment of the LED module using the four types of LED packages shown in FIG.
FIG. 9 is a view for explaining a fourth embodiment of an LED module using four types of LED packages shown in FIG.
FIG. 10 is a view for explaining a fifth embodiment of an LED module using four kinds of LED packages shown in FIG.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings and the description thereof are intended to aid those of ordinary skill in the art in understanding the present invention. Accordingly, the drawings and description are not to be construed as limiting the scope of the invention.

1 and 2, a chip scale LED package 1 according to an embodiment of the present invention includes an LED chip 200 having an upper surface, a bottom surface, and side surfaces, . A first conductive type electrode pad 251 and a second conductive type electrode pad 252 are formed on the bottom surface of the LED chip 200.

The chip scale LED package 1 is mounted on the bottom surface of the LED chip 200 by a first solder bump 261 and a second solder bump 262, And a first electrode 710 and a second electrode 720 electrically connected to the second conductive type electrode pad 252. The first electrode 710 and the second electrode 720 may be provided as a part of a submount substrate including an insulating material.

The chip scale LED package 1 includes a side wave length conversion unit 400 configured to cover a side surface of the LED chip 200 and a top waveguide unit 400 disposed on the top surface of the LED chip 200 and the side waveguide unit 400 And a top surface wavelength converting unit 600 formed to cover the top surface. The side waveguide conversion unit 400 and the top waveguide conversion unit 600 may include at least one kind of phosphor. The side waveguide conversion unit 400 and the top waveguide conversion unit 600 may have different phosphors and / Or a combination of different phosphors.

The side wave length conversion unit 400 performs wavelength conversion of the light emitted through the side surface of the LED chip 200 and mixes the light of the LED chip 200 and the wavelength converted light by the fluorescent material, Make and release. The top surface wavelength converting unit 600 performs wavelength conversion on the light emitted through the top surface of the LED chip 200 and the top surface of the side waveguide conversion unit 400 and mixes the light of the LED chip 200 with the wavelength- To emit light of a second color temperature.

At this time, it is preferable that the first color temperature and the second color temperature have a difference of 1000 K or more. For example, when the light of the first color temperature is cool white light corresponding to approximately 6000 K, the light of the second color temperature is preferably warm white light corresponding to approximately 4000K. Conversely, when the light of the first color temperature is warm white light corresponding to approximately 4000 K, the light of the second color temperature is preferably cool white light corresponding to approximately 6000K.

As the LED chip 200, any one of an LED chip emitting ultraviolet light of 250 nm to 480 nm, that is, an ultraviolet LED chip, a purple LED chip, and a blue LED chip may be selected and used. In particular, the LED chip 200 may be formed of InGaN and / A blue LED chip can be used. The side waveguide conversion unit 400 or the top waveguide conversion unit 600 generates a cool white light by using a yellow phosphor that is excited by blue light or purple light to emit yellow light or a red or orange phosphor and a green or yellow phosphor The phosphor can be used to make a warm white light.

An overall color temperature difference may occur depending on whether the wavelength conversion unit 400 or 600 formed with the phosphor of the same type as the concentration is applied to the side waveguide conversion unit 400 or the top waveguide conversion unit 600. This means that it is possible to implement two or more types of LED packages having different color temperature characteristics by differently arranging the two kinds of wavelength conversion parts having different characteristics on the top and side of the LED chip. In addition, the LED package having different color temperature characteristics can be realized by adjusting the thicknesses of the side waveguide conversion unit 400 and the top waveguide conversion unit 600. Particularly, depending on the thickness of the side waveguide conversion unit 400, the size of the area where the side waveguide conversion unit 400 and the top waveguide unit 600 form the upper and lower layers is different, A large contribution can be made in changing.

The side waveguide conversion unit 400 is formed by contacting a side surface of the LED chip 200 with a translucent resin including at least one phosphor. The upper surface wavelength converting portion 600 includes a translucent resin including at least one phosphor and is formed in contact with the upper surface of the LED chip 200 and the upper surface of the side waveguide conversion portion 600.

The LED chip 200 includes first and second conductive electrode pads 251 and 252 on the bottom surface side and the first and second conductive type electrode pads 251 and 252 are formed on the bottom surface side, And a flip-bonding type LED chip electrically connected to the first electrode 710 and the second electrode 720 by solder bumps 261 and 262, respectively. The LED chip 200 includes a transmissive substrate 210, a first conductive semiconductor layer 220, an active layer 230, and a second conductive semiconductor layer 240 in this order from top to bottom. The first conductive type pad 251 of the first conductive type semiconductor layer 210 and the second conductive type pad 252 of the second conductive type semiconductor layer 240 are formed on the bottom surface of the LED chip 200, The first electrode 710 and the second electrode 720 are flip-bonded.

The sapphire substrate may include a GaN-based first conductive semiconductor layer 220, an active layer 230, and a second conductive semiconductor layer 240, There is work. The upper surface wavelength converting portion 600 is formed on the transparent substrate 210.

The first conductive semiconductor layer 220 and the second conductive semiconductor layer 240 may be an n-type semiconductor layer and a p-type semiconductor layer. The active layer 230 may be a multi quantum well, . ≪ / RTI > The side waveguide conversion unit 400 is formed to directly contact at least sides of the first conductivity type semiconductor layer 220, the active layer 230, and the second conductivity type semiconductor layer 240.

3A to 3G, a method of manufacturing a chip scale LED package according to an embodiment of the present invention will be described.

First, referring to FIG. 3A, an LED chip 200, which is flip-bonded on a substrate including first and second electrodes 710 and 720, is prepared. At this time, due to the first and second solder bumps 261 and 262 connecting the bottom surface of the LED chip 200 and the first and second electrodes 710 and 720, 1 and the second electrodes 710 and 720 are formed. Next, the primary barrier ribs 1000 are installed to surround all four sides of the LED chip 200 with the four sides of the LED chip 200 being spaced apart from each other. At this time, the height of the primary barrier ribs 1000 is equal to the height of the LED chip 200 or lower than the height of the LED chip 200.

Next, referring to FIG. 3B, a liquid or gel resin mixed with one or more phosphors is filled into a side space between the side surface of the LED chip 200 and the first barrier rib 1000 and then cured to form a side wave The conversion unit 400 is formed. A part of the resin including the phosphor enters the gap between the LED chip 200 and the first and second electrodes 710 and 720 and a part of the side wave-length conversion part 400 covers the bottom surface of the LED chip 200 May also be considered.

Referring to FIG. 3C, the first barrier rib 1000 is removed, thereby exposing the side waveguide conversion unit 400. The side wave length conversion unit 400 cooperates with the light emitted through the side surface of the LED chip 200 to produce cool white light or warm white light. Since the primary barrier rib 1000 is equal to or smaller than the height of the LED chip 200, the side waveguide conversion unit 400 also has a height equal to or lower than the height of the LED chip 200 .

Referring to FIG. 3D, a secondary barrier 2000 is provided which is in contact with a side surface of the side waveguide conversion unit 400 and has a height greater than that of the LED chip 200 and the side waveguide conversion unit 400. Thus, an upper space surrounded by the secondary barrier ribs 2000 is formed on the LED chip 200 and the side waveguide conversion unit 400.

Next, referring to FIG. 3E, a liquid or gelled resin mixed with at least one phosphor is filled into the side space between the side surface of the LED chip 200 and the first barrier rib 1000 and then cured to form a top surface wavelength The conversion unit 600 is formed. The combination and / or the combination of the phosphor used for forming the upper surface wavelength converting portion 600 is different from the type and / or combination of the phosphor used for forming the side wavelength tuning portion 400. Thus, The conversion unit 600 has a color temperature characteristic different from the color temperature characteristic of the side wave length conversion unit 400.

Referring to FIG. 3F, the second barrier rib 2000 is removed to expose the side waveguide conversion unit 400 and the top waveguide conversion unit 600, and ultimately, the color temperature characteristics of the top surface and the side surface The fabrication of the different chip scale LED package 1 is completed.

3G, the first chip 710 and the second chip 720 are soldered to a separate substrate 3000 by SMT or soldered to the corresponding chip 3000, ). Soldering portions 3001 and 3002 electrically connect the electrode patterns of the substrate 3000 to the first electrode 710 and the second electrode 720. The loss of the LED element can be minimized in the case where it is formed to be inclined from the side when SMT or lead (green ball) is formed.

3A and 3B in the manufacturing process of the chip scale LED package 1 described above, it can be seen that the side waveguide conversion unit 400 is further extended beyond the bottom surface of the LED chip 200. [

On the contrary, covering the side surface of the LED chip 200 with the side surface wavelength conversion portion 400 may be advantageous in ensuring the uniformity of the color temperature among the manufactured LED package 1 products. 4, after the primary barrier rib 1000 is formed to have an extended cross section below the bottom surface of the LED chip 200, the primary barrier rib 1000 and the LED chip 200 The side surface wavelength conversion portion 400 covering only the side surface of the LED chip 200 can be formed by injecting and curing a translucent resin including a phosphor into the side space between the LED chip 200 and the LED chip 200.

As described above, it is possible to manufacture various LED modules capable of adjusting the color temperature of white light by using various kinds of LED packages including one or more chip scale LED packages having different color temperature characteristics of the side waveguide conversion unit and the top waveguide conversion unit.

5, there are shown four types of LED packages to be applied to the LED module according to the present invention. Referring to FIG. 5, it is assumed that a cool white wavelength conversion unit 600c including only a cool white wavelength conversion unit, A first LED package 1cc including a wavelength conversion unit 400c, a second LED package 1cw including a cool white topology wavelength conversion unit 600c and a warm white side wavelength conversion unit 400w, A third LED package 1wc including a white top wavelength conversion unit 600w and a cool white side wavelength conversion unit 400c and a third white LED unit including a warm white wavelength conversion unit 600w including only a warm white wavelength conversion unit, And a warm white side wavelength conversion unit 400c.

Embodiments of LED modules that can be implemented by applying the above-described four kinds of LED packages are shown in Figs. 6 to 9. Fig. 6 to 9, the first LED package 1cc is connected to the first LED package 1cw, the third LED package 1wc to the third LED package 1cc, (1ww) is indicated by ④.

Referring to FIG. 6, four kinds of LED packages are arranged on a substrate 300 in a mattress arrangement, and a first LED package 1, to which a cool-white wavelength conversion unit and a cool-white wavelength conversion unit are applied, One or more fourth LED packages (4) arranged on the outside in the mattress arrangement of the LED packages and applying only the warm white wavelength conversion section are arranged on the center side of the arrangement and the cool white wavelength conversion section is arranged on the upper surface of the LED chip And a second LED package (2) having a warm white wavelength conversion part on a side surface of the LED chip is disposed adjacent to an outer periphery on which the first LED package is arranged, and the warm white wavelength conversion part is disposed on the upper surface of the LED chip And a third LED package (3) having a cool-white wavelength conversion part on a side face is disposed adjacent to a center of the fourth LED package. When a voltage is fully applied to the LED module arranged as shown in FIG. 6, cool white light is expressed, and warm white light can be adjusted at the time of dimming.

Referring to FIG. 7, a substrate 3000 is arranged in a mattress arrangement similar to that of the previous embodiment to implement an LED module. At this time, the fourth LED package ④ using only the cool-white wavelength conversion part and the warm-white wavelength conversion part of the warm-white wavelength conversion part is disposed outside the mattress arrangement of the LED packages, and one or more first LEDs The third LED package 3, which has the package 1 on the upper side of the LED chip having a relatively large amount of light and the cool-white wavelength converter on the side of the LED chip, is disposed on the center side of the arrangement, A second LED package (2) having a cool-white wavelength conversion section on the upper surface of the LED chip having a relatively large amount of light and a warm-white wavelength conversion section on the side surface is disposed adjacent to the outline where the LED package And placed adjacent to the center of the location. When a voltage is fully applied to the LED module arranged as shown in FIG. 7, warm white light is expressed, and cool white light can be adjusted at the time of dimming.

Referring to FIG. 8, the LED module includes a plurality of LED packages arranged on the substrate 3000, and the plurality of LED packages are grouped into a plurality of LED groups (G). Each of the plurality of LED groups G includes a first LED package 1, a second LED package 2, a third LED package 3, and a fourth LED package 4 that are arranged in a quadrangle and are individually controlled. Since the first LED package 1, the second LED package 2, the third LED package 3 and the fourth LED package 4 are separately controlled, the LED module can control the color temperature from the cool white light to the warm white light finely . For example, in the LED module, when the first LED package 1 is turned on and the second LED package 2, the third LED package 3, and the fourth LED package 4 are turned off, When the second LED package 2, the third LED package 3 and the fourth LED package 4 are turned on in sequence, the color temperature increases and eventually the warmest white light having the lowest color temperature can be emitted.

However, when the adjacent portions of the first LED package 1, the second LED package 2, the third LED package 3 and the fourth LED package 4 are simultaneously controlled or all of them are simultaneously controlled, The color conversion may be performed by the wavelength conversion unit or light of another wavelength may be generated to interfere with the implementation of the desired color temperature. Therefore, the adjacent area between the first LED package 1 and the second LED package 2, A reflective barrier may be additionally formed in an adjacent region between each LED package, such as an adjacent region between the first LED package 2 and the third LED package 3, so as to be reflected without being affected by the side waveguide conversion portion. Such a reflective barrier may be formed in an adjacent region between the plurality of LED groups G. [

9, each of the first LED package 1, the second LED package 2, the third LED package 3, and the fourth LED package 4 includes a first electrode pair E1, E2 and the second electrode pair E3 and E4 and the third pair of electrodes E5 and E6 and the fourth pair of electrodes E7 and E8 and according to another embodiment, 10, each of the first LED package 1 and the fourth LED package 4 is individually connected to the first electrode pair E1 and E2 and the third electrode pair E5 and E6, The two LED packages 2 and 3 and the third LED packages 2 and 3 may be connected to the second electrode pair E3 and E4 together and operated together. In this specification, the electrode pairs are defined as being a substrate or a part of a substrate.

200 ................................... LED chip
400: side wavelength conversion section
600 .................. The upper surface wavelength converting section
251 .......................... First conductive type electrode pad
252 .......................... Second conductive type electrode pad
710 .................................. First electrode
720 .............................. Second electrode

Claims (22)

Board; And
And at least two LED packages disposed on the substrate,
At least one LED package of the LED packages includes an LED chip having an upper surface, a bottom surface, and side surfaces, and a light emitting diode And a second wavelength conversion material of a second color temperature different from the first wavelength conversion material of the first color temperature formed on a side surface of the LED chip, the second wavelength conversion material being formed on the upper surface of the LED chip And a top wavelength conversion unit. The LED module of claim 1, wherein the first color temperature and the second color temperature differ by at least 2000K. The LED package according to claim 1, wherein the LED packages include a cool-white upper-surface wavelength conversion unit that generates cool-white light from an upper surface of the LED chip, and a warm-white side wavelength conversion unit that creates warm- The LED module comprising: The LED package according to claim 1, wherein the LED packages include a cool white side wavelength conversion unit for generating cool white light on the side of the LED chip, and a warm white top wave conversion unit for forming a warm white light on the upper surface of the LED chip. The LED module according to claim 1, The LED package according to claim 1, wherein the LED packages include a first LED package including a cool white side wavelength conversion section and a cool white top side wavelength conversion section, a second LED package including a cool white top wavelength conversion section and a warm white side wavelength conversion section, And a third LED package including a warm white top wavelength conversion unit and a cool white side wavelength conversion unit and a fourth LED package including a warm white top wavelength conversion unit and a warm white side wavelength conversion unit, At least one LED package of the fourth LED package, and at least one LED package of the second LED package and the third LED package. 6. The LED package of claim 5, wherein the first LED package is disposed in an outer perimeter within the array of LED packages, the fourth LED package is disposed in the center of the array of LED packages, And the third LED package is disposed adjacent to the fourth LED package between the outer periphery and the center of the third LED package. 6. The LED package of claim 5, wherein the fourth LED package is disposed at an outer perimeter within the array of LED packages, the first LED package is disposed in the center of the array of LED packages, And the second LED package is disposed adjacent to the first LED package between the outer periphery and the center of the second LED package. The method of claim 5, wherein the LED packages are grouped and grouped into a plurality of LED groups on the substrate, wherein each of the plurality of LED groups includes the first LED package, the second LED package, And a fourth LED package. The LED module of claim 8, wherein the first LED package, the second LED package, the third LED package, and the fourth LED package are operated independently of each other. 6. The LED package of claim 5, wherein the substrate comprises a first electrode pair, a second electrode pair, a third electrode pair, and a fourth electrode pair, wherein the first LED package, the second LED package, And each of the fourth LED packages is individually connected to the first electrode pair, the second electrode pair, the third electrode pair, and the fourth electrode pair, and is individually controlled. 6. The LED package of claim 5, wherein the substrate comprises a first electrode pair, a second electrode pair and a third electrode pair, wherein each of the first LED package and the fourth LED package includes a first electrode pair and a third electrode pair And the second LED package and the third LED package are connected to the second electrode pair and are operated together. The LED chip according to claim 1, wherein the LED chip has a structure in which the first conductive type electrode pad and the second conductive type electrode pad are provided on the bottom surface and connected to the first electrode and the second electrode on the bottom surface side. module. An LED chip having an upper surface, a bottom surface and side surfaces and emitting light of 250 nm to 480 nm;
A side wavelength converter formed on the side surface of the LED chip, the side wavelength converter comprising a first wavelength conversion material forming light of a first color temperature; And
And a top wavelength conversion unit formed on an upper surface of the LED chip with a second wavelength conversion material of a second color temperature different from the first wavelength conversion material of the first color temperature formed on a side surface of the LED chip. [14] The LED package of claim 13, wherein the side waveguide conversion unit and the top waveguide conversion unit comprise a combination of different kinds of phosphors or different phosphors. [14] The LED package according to claim 13, wherein the side waveguide conversion unit comprises a light transmitting resin including at least one phosphor, the side surface wavelength converting unit having a height less than a height of the LED chip. [14] The LED package according to claim 13, wherein the upper surface wavelength converting portion is formed so that a light transmitting resin including at least one phosphor is in contact with the upper surface of the LED chip. The LED chip according to claim 13, wherein a first conductive type electrode pad provided on the bottom surface of the LED chip and a first conductive type electrode pad electrically connected to the second conductive type electrode pad are formed on the bottom surface of the LED chip by first solder bumps and second solder bumps, Further comprising an electrode and a second electrode. The LED according to claim 17, wherein the LED chip includes a sapphire substrate, a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially from top to bottom, and the first conductivity type semiconductor layer region Wherein the first conductive type electrode pad is formed on the first conductive type semiconductor layer region and the second conductive type electrode pad is formed on the second conductive type semiconductor layer region. [19] The device of claim 18, wherein the side waveguide conversion unit is formed in contact with at least sides of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, and the top wavelength conversion unit is formed in contact with the sapphire substrate LED package. Forming a first bulkhead that entirely surrounds the side of the LED chip;
Filling a space between a side surface of the LED chip and the first barrier rib with a resin including a first phosphor to form a side waveguide conversion unit;
Removing the primary barrier ribs;
Forming a second barrier rib in contact with a side surface of the side waveguide conversion section and having a height greater than that of the LED chip and the side waveguide conversion section; And
And forming a top surface wavelength converting portion by filling a resin including a second phosphor different from the first phosphor into an upper space formed on the upper portion of the LED chip by the secondary barrier,
In the forming of the first barrier rib, the first barrier rib is formed to have a cross section extending below the bottom surface of the LED chip. In the forming of the side waveguide, the first barrier rib is not extended below the bottom surface of the LED chip, Wherein a side wavelength conversion portion covering only the side surface of the chip is formed. delete delete

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