KR101777929B1 - Method for estimating performace of suspended channel plasma wave transistor - Google Patents
Method for estimating performace of suspended channel plasma wave transistor Download PDFInfo
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Abstract
It is an object of the present invention to provide a performance evaluation method of a suspended channel plasma wave transistor that evaluates the terahertz oscillation possibility of a corresponding device using physical characteristics of a suspended channel plasma wave transistor.
According to an aspect of the present invention, there is provided a method of evaluating performance of a suspended channel plasma wave transistor, comprising: setting an x-axis of an electron drift velocity as an x-axis; A y-axis setting step of setting a plasma wave velocity as a y-axis; And a device performance determination step of determining an operation of the device by generating a design window using a relationship of a plasma wave velocity according to an electron drift velocity and a plasma wave generation condition of a suspended channel plasma wave transistor.
Description
The present invention relates to a method for evaluating the performance of a susfnded channel plasma wave transistor, and more particularly, to a method for evaluating the performance of a susfanded channel plasma wave transistor using a design window.
Terahertz wave is an unexplored technology area that is recognized as a kind of terahertz gap due to the unobtained frequency resource of 100GHz ~ 10THz band, which is the middle area between infrared and millimeter wave in electromagnetic wave spectrum and very high entry barrier at current technology level. Although terahertz wave technology was mainly optical, it has been developed as a mixture of optoelectronic technology and electronic engineering technology with the development of nanosecond electronic device / material technology.
In the field of electronics technology, passive devices such as RTD (resonant tunneling diode) and SBD (schottky barrier diode) have been actively studied. Recently, the III-V HBT and HEMT devices have approached the cut- . Meanwhile, optical engineering technologies include the development of devices such as photoconductive switches, optical rectification, differential frequency generation (DFG), optical parametric, terahertz quantum lasers (THz-QCL) and single carrier photodiodes (UTC-PD) As a result of this, Terahertz technology is being pulled further.
Current nanotransistor technology has been scaled down to 20 nm continuously for even higher operating frequencies, but channel scaling in transit-mode alone has limited its operation in the 500 GHz and higher bands. A plasma wave transistor (PWT), which is a new concept to overcome this problem, uses a plasma-wave defined as a time-space oscillation wave of channel electron density, . The study of device for plasma wave transistor for terahertz oscillation and detection using plasma resonance phenomenon of 2D channel electron density and operating in frequency range higher than cutoff frequency of transistor is a technology to fill terahertz gap, It is progressing.
Research on terahertz oscillation and detection devices using plasma wave transistors has been carried out for 20 years since the first presentation by professor Michael Shur of RPI in the United States. , Technical difficulties exist in evaluating terahertz devices and their characteristics, which are still at the level of commercialization.
Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors, F. Teppe, A. El., And Terahertz Emitters, Detectors and Sensors: Current Status and Future Prospects, M. Ghanashyam Krishna, Sachin D. Kshirsagar and Surya P. Tewari, In the UFPS, there is a technical outline that can be reached within the terahertz range using a resonator for plasma waves. The relationship between the drain-source current and the correlation of the plasma wave with respect to the frequency, the velocity of the plasma wave, and the drift velocity are theoretically solved.
A method for evaluating the performance of a plasma wave transistor using the theory of the prior art is filed by the present applicant and registered as a registered patent No. 1521116. [ The patent is directed to a resonant plasma wave transistor and is characterized by its application characteristics being evaluated by a terahertz oscillator.
The applicant of the present invention has proposed a suspended channel plasma wave transistor (SC-PWT) that overcomes the disadvantages of the conventional resonance type plasma wave transistor. Based on the above configuration, -0193098.
In the case of the SC-PWT (or SC-PWD, suspended channel plasma wave device), there is a difference in fundamental characteristics from the resonance type plasma wave transistor, which is inadequate to evaluate the characteristics of the device through the conventional evaluation method. Is required.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of evaluating the performance of a suspended channel plasma wave transistor that evaluates the terahertz oscillation possibility of a device using physical characteristics of the suspended channel plasma wave transistor. do.
According to an aspect of the present invention, there is provided a method of evaluating performance of a suspended channel plasma wave transistor, comprising: setting an x-axis of an electron drift velocity as an x-axis; A y-axis setting step of setting a plasma wave velocity as a y-axis; And a device performance determination step of determining an operation of the device by generating a design window using a relationship of a plasma wave velocity according to an electron drift velocity and a plasma wave generation condition of a suspended channel plasma wave transistor.
More preferably, the plasma wave generating condition of the suspended-channel-type plasma wave transistor includes a frequency condition, an increasing condition, and an unstable condition.
More preferably, the increase condition is characterized by distinguishing an ideal drain impedance and a finite impedance.
More preferably, the increasing condition in the finite impedance is characterized by using an intersection with a frequency condition in which a value of? 'Is fixed.
Preferably, the device performance determination step further includes a z-axis setting step of setting the channel length as a z-axis, and the device performance is determined using a three-dimensional shape design window.
The performance evaluation method of the suspended channel plasma wave transistor according to the present invention is characterized in that performance parameters affecting the emission performance in the evaluation of the suspended channel plasma wave transistor are selected and the relationship between them is derived, By designing a design window that can test what performance is to be developed, it is possible to easily evaluate whether a suspended channel plasma plasma wave transistor can operate as a terahertz oscillator, and various materials that can be used in a semiconductor device The proposed method can be applied to the development of a suspended channel plasma plasma Hertzite emitter using new materials.
1 is a flowchart of a method of evaluating the performance of a suspended channel plasma wave transistor according to the present invention,
2 is a graph of a design window according to a frequency condition,
3 is a graph of a design window according to an increasing condition,
4 is a graph of a design window according to an increasing condition with a finite impedance,
5 is a graph of a design window according to an unstable condition,
FIG. 6 is a graph of a design window according to all conditions,
7 is a design window graph according to the first embodiment,
8 is a design window graph according to the second embodiment,
9 is a graph of the design window according to the third embodiment,
10 is a design window graph according to the fourth embodiment,
11 is a graph of the design window according to the fifth embodiment.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The method for evaluating the performance of a suspended channel plasma wave transistor according to the present invention derives necessary mathematical expressions using the relational expression proposed in the following non-patent document to show a design window.
Non-patent document 1: Michel Dyakonov, Laboratoire de Physique Theorque et Asteropaticules, cc 070, Univesite 'Montpellier H, 34095 Montpellier, France
Non-Patent Document 2: Michael S. Shur, Rensselar Polytechnic Institute, CII-9017, ECSE and Broadband Data Transport Center, Try, New York 1218
Non-Patent Document 3: M. V. Cheremisin, Solid-State Electronics 52, 338 (2008)
First, the dispertion relation and the velocity of plasma-wave in the two-dimensional SC-PWD are calculated using a relational expression of
Equation 1:
Equation 2:
Where ω is the angular velocity, e is the charge quantity, k is the wave number, v is the electron drift velocity, n0 is the surface electron density, k ± is the wave number for the downstream and upstream respectively, The dielectric constant of the channel material, S ± , means the plasma wave velocity.
And k ± is derived by the
Equation (3)
Here,? Is an acceleration component of a plasma wave, and each frequency (Angular frequency? '+ I? ") Is derived as follows.
Equation 4:
If ω "> 0, the plasma wave amplification starts.
And the drain reflection coefficient is derived as shown in Equation 5 when the drain boundary condition impedance value is Zd.
That is, using the following equation,
In short,
Equation 5
On the other hand, the SC-PWD operates as a terahertz device under the conditions shown in Table 1 below.
Table 1
That is, the criteria for generating plasma waves of SC-PWD are instability, increment and frequency conditions. Therefore, the SC-PWD operates as a terahertz oscillator under the conditions of Table 1 above, and the above conditions are examined for each parameter.
When? Is introduced, the fundamental equation representing the relationship between the plasma wave velocity and the electron drift velocity is summarized in Equation (6).
As shown in FIG. 1, the method for evaluating the performance of a suspended channel plasma wave transistor according to the present invention includes an x-axis setting step (S1) for setting an electron drifting velocity on the x-axis, a y An axis setting step S2 and a device performance determination step S3 for determining the operation of the device by generating a design window indicating the relationship between the plasma wave velocity according to the electron drifting velocity.
Each step will be described below.
The x-axis setting step (S1)
The design window includes the x-axis, the y-axis and, if necessary, the z-axis.
At this time, the x-axis is set to the electron drift velocity v 0 . The v 0 gradually increases from zero.
y-axis setting step S2,
The y-axis of the design window is changed by changing the value of x, and the y-axis is set to the plasma wave velocity s + .
In the device performance determination step S3,
The device performance judgment step S3 is a step of judging the operation range of the emitter by creating a design window according to the change of the v 0 value and the device parameters such as channel length L, channel width W, mobility μ, and drain impedance Zd, The operating range of the device is determined by applying the three conditions shown in Table 1.
1. Frequency condition f < 10 THz )
In the case of using Equations (4) and (6), the relationship between the plasma wave velocity and the electron drift velocity at each frequency condition is derived as shown in Equation (7).
Equation (7)
The relationship between the plasma wave velocity and the electron drift velocity according to the frequency magnitude is shown in the graph of FIG.
2. Increment condition (ω "= 0)
? = 0 means a point at which rd = rd, i = rd, c. Therefore, using
Equation (8)
The graph shown in FIG. 3 can be obtained by using Equation (8).
3. Increase condition - finite Zd (increment condition, ω "= 0)
Also ? = 0 means a point at which rd = rd, i = rd, c. Therefore, since
Equation (9)
However, the above equation (9) includes? ', So that the window can not be shown only by the change of?. Therefore, if a separate equation is required, the present invention uses Equations (7) and (9), where v0-vo '= 0, where the condition is derived from Equation (10). Therefore, after fixing? ', The? Value is obtained by solving the nonlinear equation of Equation (10).
Using the equations (10) and (9), the graph shown in FIG. 4 can be obtained.
4. instability condition
by addition of a dc current source v 0 shall have a constant value across the channels assume, at which time the maximum velocity is assumed the electrons are injected speed v inj d from the source, and v 0 is the situation that can not pass the plasma wave velocity s Assuming, the condition is limited to v 0 = v inj .
The graph with the unstable condition added is as shown in FIG. 5, and the final design window as shown in FIG. 6 can be obtained by combining all two conditions.
Hereinafter, the present invention will be described in more detail with reference to Examples.
Example One
The change of the design window of the SC-PWD THz emitter when using the suspended graphene with mobility of 100,000 (m = 0.02m 0 ) as a channel material with the size of L (length) = 300 nm and W (width) The graph shown in accordance with Z d | is shown in Fig.
Example 2
The change of the design window according to the change of the mobility is shown in Fig. As shown in FIG. 8, it has been analyzed that it has a relatively wide design freedom at high mobility.
Example 3
A design window that changes with respect to channel length when having the same mobility is shown in Fig. The same min. h.
As shown in FIG. 9, as the channel length becomes longer, the width of the design window gradually becomes narrower, and when the L max is reached, the design window disappears.
On the other hand, in case of suspended graphene with mobility of 100,000 and effective mass m = 0.02m 0 , L max = 865 nm can be calculated. And, as the channel mobility increases further, it is found that Lmax = 1298 nm if the suspended graphene with mobility of 150,000 is secured.
Example 4
The change in the resonance window (design window) with respect to the channel width is shown in Fig. As shown in FIG. 10, when the channel width is increased to some extent, the frequency range increases greatly and the critical impedances | Z d, c | for generating resonance increase. At the same time, The plasma wave to be propagated in one direction may increase in the component traveling along the y-axis due to the increase of the channel width, which may degrade the characteristics. Therefore, when the appropriate value is selected by the design window shown in FIG. 10, There are advantages to be able to design.
Example 5
When the channel length L is added as the z-axis, a three-dimensional graph as shown in Fig. 11 can be obtained. 11, there is an advantage that the change of the resonance window for various variables can be examined at a time. In particular, it can be seen that the channel mobility is 100,000, the effective mass m is 0.02 m 0 , and L max = 865 nm when an ideal drain impedance is assumed, but a high | Z d | is secured near 800 nm.
Therefore, the possibility of implementation of the THz emitter is increased by forming the SC-PWD having the shortest possible channel length through FIG.
As described above, in the method of evaluating the performance of a suspended channel plasma wave transistor according to the present invention, after selecting a constituent material, device characteristics according to channel length, channel width, and impedance can be grasped and conversely, channel length, channel width, Subsequently, a usable material may be selected as an oscillator.
In addition, after three of the four parameters are fixed, one parameter can be changed to set the range of the parameter usable as the oscillator.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And all of the various forms of embodiments that can be practiced without departing from the technical spirit.
S1: x-axis setting step S2: y-axis setting step
S3: Step of device performance evaluation
Claims (5)
An x-axis setting step of setting an electron drift velocity as an x-axis;
A y-axis setting step of setting a plasma wave velocity as a y-axis; And
And a device performance determination step of determining a device operation by generating a design window using a relationship of a plasma wave velocity according to an electron drift velocity and a plasma wave generation condition of a suspended channel plasma wave transistor,
Wherein the plasma wave generating condition of the suspended channel plasma wave transistor includes a frequency condition, an increasing condition, and an unstable condition,
Wherein the increase condition is determined by distinguishing an ideal drain impedance and a finite impedance. ≪ RTI ID = 0.0 > 8. < / RTI >
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005142304A (en) | 2003-11-05 | 2005-06-02 | Seiko Epson Corp | Transistor evaluation method |
| US8053271B2 (en) | 2004-04-26 | 2011-11-08 | Sensor Electronic Technology, Inc. | Device and method for managing radiation |
| US20130277716A1 (en) | 2010-12-03 | 2013-10-24 | Tohoku University | Terahertz electromagnetic wave conversion device |
| KR101521116B1 (en) * | 2014-02-24 | 2015-05-19 | 국립대학법인 울산과학기술대학교 산학협력단 | Method for estimating performace of plasma wave transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005142304A (en) | 2003-11-05 | 2005-06-02 | Seiko Epson Corp | Transistor evaluation method |
| US8053271B2 (en) | 2004-04-26 | 2011-11-08 | Sensor Electronic Technology, Inc. | Device and method for managing radiation |
| US20130277716A1 (en) | 2010-12-03 | 2013-10-24 | Tohoku University | Terahertz electromagnetic wave conversion device |
| KR101521116B1 (en) * | 2014-02-24 | 2015-05-19 | 국립대학법인 울산과학기술대학교 산학협력단 | Method for estimating performace of plasma wave transistor |
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