KR101767488B1

KR101767488B1 - Pressure switch and manufacturing method thereof

Info

Publication number: KR101767488B1
Application number: KR1020150122744A
Authority: KR
Inventors: 임상호; 김옥삼; 김세광; 신은정; 권형근
Original assignee: 고려대학교 산학협력단; 주식회사 아산정밀
Priority date: 2015-08-31
Filing date: 2015-08-31
Publication date: 2017-08-11
Also published as: KR20170025788A

Abstract

The present invention relates to a pressure switch and a method of manufacturing the same, and a pressure switch according to an embodiment of the present invention is provided with a housing space (11) therein, a fluid (1) A housing 10 in which the inlet 13 is formed and the other end is opened; a substrate 20 disposed at the other end of the housing 10 to seal the other end of the housing 10; And one side is pressed by the fluid 1 introduced through the fluid inlet 13 to be separated from the substrate 20 and separated from the substrate 20 and connected to the inner surface of the housing 10, A movable electrode 40 formed on the other surface of the elastic diaphragm 30 and formed in a columnar shape and disposed to penetrate through the substrate 20, The fixed electrode 50, which contacts the movable electrode 40 when the elastic diaphragm 30 is bent and generates an electric signal, The.

Description

[0001] PRESSURE SWITCH AND MANUFACTURING METHOD THEREOF [0002]

The present invention relates to a pressure switch and a method of manufacturing the same.

A pressure switch is a switch that opens and closes an electrical contact when the pressure of the liquid or gas is higher or lower than the set value. These pressure switches are used for pressure monitoring of pressure tanks, air tanks, etc., and for control of oil and pneumatic devices. They are mainly used with relays to control the on / off control of hydraulic pumps by operating solenoid valves, The pressure switch is classified into a bellows type pressure switch, a bourdon type pressure switch, and a piston type pressure switch according to its structure.

As disclosed in the patent documents of the following prior art documents, the electrical contacts used in the pressure switch are generally microswitches. Such a conventional pressure switch is formed such that the hydraulic line communicates with the hydraulic portion and the distal end of the spool fixes the lever and selectively contacts the microswitch. Here, when the fluid introduced into the hydraulic line flows into the hydraulic pressure portion and the internal pressure of the hydraulic pressure portion rises, the lever comes into contact with the microswitch as the spool moves. On the other hand, when the internal pressure of the hydraulic pressure part drops, the lever is separated from the microswitch. In this way, the lever is contacted with or spaced from the microswitch, thereby functioning as a pressure switch for opening and closing the electrical contact.

Recently, pressure switches have been used in fire detectors. As the pressure of the gas increases as the temperature rises due to fire, the pressure switch operates according to the pressure change and detects the fire. Among these fire detectors, a highly reliable fire detector is a metal hydride fire detector. A fire detector using a metal hydride takes place in such a way that the hydrogen released from the metal hydride by the fire causes a pressure change and the pressure switch operates by the pressure change. Such a fire detector can detect a fire in a wide area, can simultaneously detect a local flame directly touching the room, and a fire caused by a warm rise of the whole space, and thus is more useful than a conventional fire detector.

As a pressure switch applicable to such a fire detector, a conventional pressure switch including a pressure switch disclosed in the following prior art documents is composed of many parts and has a complex operation method, so that the manufacturing process is complicated and the manufacturing cost is high There is a problem. In the case of a fire detector using a metal hydride, it is also difficult to miniaturize the pressure switch.

Accordingly, there is a desperate need for a solution to the problem occurring in the pressure switch according to the prior art.

KR 2001-0046568 A

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems of the prior art, and it is an object of the present invention to provide a plasma display panel, in which a movable electrode is disposed in an elastic diaphragm located inside a housing, And the movable electrode and the fixed electrode are brought into contact with each other when the liquid is introduced into the housing.

Another aspect of the present invention is to provide a method of manufacturing a pressure switch for forming an elastic diaphragm on a substrate using a MEMS (MEMS) process.

The pressure switch according to an embodiment of the present invention includes a housing having an accommodation space therein and having a fluid inlet formed at one end thereof for introducing the fluid into the accommodation space and having the other end opened, A substrate disposed in the receiving space and spaced apart from the substrate and having an edge coupled to an inner surface of the housing such that one side of the substrate is exposed by the fluid introduced through the fluid inlet, An elastic diaphragm curved in the direction of the substrate when pressed, a movable electrode formed in a pin-like shape and disposed on the other surface of the elastic diaphragm, and a pillar shape, fixed to the substrate through the substrate, And a fixed electrode that contacts the movable electrode when the diaphragm is curved and generates an electrical signal.

Further, the pressure switch according to the embodiment of the present invention may further include a support protruding from the other surface of the elastic diaphragm and coupled to the substrate so as to face each other with the fixed electrode therebetween.

Further, in the pressure switch according to the embodiment of the present invention, the pair of support rods have a predetermined length and are arranged side by side along the longitudinal direction.

Further, in the pressure switch according to the embodiment of the present invention, the elastic diaphragm is formed of silicon.

Further, in the pressure switch according to the embodiment of the present invention, the movable electrode is formed of a metal or a silicide.

A method of manufacturing a pressure switch according to an embodiment of the present invention includes the steps of (A) depositing silicon dioxide on a substrate to form a sacrifice layer, (B) forming a pair from a side of the sacrifice layer (C) forming a through-hole through the other surface of the sacrificial layer to expose a pair of coupling surfaces that are a predetermined part of the substrate, (C) Forming a movable electrode; and (D) depositing silicon to cover one surface of the sacrificial layer and a pair of the mating surfaces, thereby forming an elastic diaphragm and a support.

Further, in the method of manufacturing a pressure switch according to an embodiment of the present invention, each of the pair of through-holes has a predetermined length and is formed to be parallel to each other along the longitudinal direction.

Further, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the step (B) may include the steps of forming a first resist film by applying a first resist solution onto one surface of the sacrificial layer, Etching the sacrificial layer so that a pair of the coupling surfaces are exposed using the first resist film as a first mask so as to form a pattern corresponding to the first resist film, And removing the first resist film from one side of the sacrificial layer.

Further, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the movable electrode is formed of a conductive material.

Further, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the conductive material is a metal or a silicide.

In addition, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the step (C) may include forming a conductive layer by depositing the conductive material on one surface of the sacrificial layer, Applying a liquid to form a second resist film, patterning the second resist film so that a pattern corresponding to a fin-shaped end face of the movable electrode is formed, and patterning the second resist film using the patterned second resist film as a second mask And etching the conductive layer so that the pin-shaped movable electrode is formed.

In addition, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the step (D) may include forming a third resist film by applying a third resist solution on one surface of the silicon layer formed by depositing the silicon, Patterning the third resist film, etching both side surfaces of the silicon layer using the patterned third resist film as a third mask, and removing the third resist film from the etched silicon layer.

Further, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the step (D) further includes etching the sacrificial layer after removing the third resist film.

In addition, in the method of manufacturing a pressure switch according to an embodiment of the present invention, the step (D) further includes planarizing one surface of the silicon layer after removing the third resist film.

According to another aspect of the present invention, there is provided a method of manufacturing a pressure switch, comprising the steps of: preparing a housing having a housing space therein and having a fluid inlet formed at one end thereof to allow a fluid to flow into the housing space, And disposing the substrate at the other end of the housing to seal the other end of the housing.

The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.

Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor may properly define the concept of the term in order to best explain its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

According to the present invention, the movable electrode is disposed in the elastic diaphragm located inside the housing, the fixed electrode is disposed on the substrate disposed at the other end of the housing, and when the fluid flows into the housing, the elastic diaphragm is curved, So that the structure of the pressure switch can be simplified.

Further, according to the present invention, since the elastic diaphragm is formed on the substrate by using the MEMS process, there is an advantage that the pressure switch is miniaturized and the manufacturing cost is reduced.

1 is a cross-sectional view of a pressure switch according to an embodiment of the present invention.
2 is a cross-sectional view of a pressure switch according to another embodiment of the present invention.
Figs. 3 to 4 are perspective views of the substrate, the elastic diaphragm, and the supporting member shown in Figs. 1 and 2. Fig.
5 is a cross-sectional view illustrating an operating state of a pressure switch according to an embodiment of the present invention.
6 is a flowchart illustrating a manufacturing process of a pressure switch according to an embodiment of the present invention.
FIGS. 7 to 19 are sectional views showing a manufacturing process of a pressure switch according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The objectives, specific advantages and novel features of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements are assigned the same number as much as possible even if they are displayed on different drawings. Also, the terms "first "," second ", and the like are used to distinguish one element from another element, and the element is not limited thereto. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description of the present invention, detailed description of related arts which may unnecessarily obscure the gist of the present invention will be omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view of a pressure switch according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a pressure switch according to another embodiment of the present invention.

1 and 2, a pressure switch according to an embodiment of the present invention includes a receiving space 11 therein and includes a fluid inlet (not shown) at one end thereof for introducing the fluid 1 into the receiving space 11, The housing 10 is provided at the other end of the housing 10 so as to seal the other end of the housing 10 and the accommodation space 11 And an edge is coupled to the inner surface of the housing 10 so that when the substrate 1 is pressed by the fluid 1 introduced through the fluid inlet 13, A movable electrode 40 formed in a pin shape and disposed on the other surface of the elastic diaphragm 30 and a movable electrode 40 formed in a columnar shape and penetrating the substrate 20 to form a substrate 20, And a fixed electrode 50 that contacts the movable electrode 40 when the elastic diaphragm 30 is bent and generates an electrical signal.

A pressure switch according to an embodiment of the present invention is a switch for opening and closing an electrical contact according to a change in pressure of fluid 1 and includes a housing 10, a substrate 20, an elastic diaphragm 30, a movable electrode 40, And includes a fixed electrode (50).

Specifically, the pressure switch according to the present embodiment opens and closes the electrical contact when the pressure of the fluid 1 reaches or exceeds the set value. The pressure switch according to the present embodiment is used for monitoring the pressure, controlling the oil / air pressure device, and in particular, by using the solenoid valve to operate the solenoid valve to turn on / off the hydraulic pump or to control the power supply circuit. The pressure switch according to the present embodiment is also applicable to a fire detector. Since the pressure of the gas increases in accordance with the temperature rise occurring in the fire, the pressure switch according to the present embodiment operates according to the pressure change to detect the fire. In this case, the fire detector also includes a fire detector using metal hydride. A fire detector using a metal hydride is a fire detector that uses a metal hydride as a core to change the pressure due to the hydrogen released from the metal hydride in the event of a fire.

Therefore, the pressure switch according to the present embodiment is applicable to various kinds of apparatuses including the above-described fire detector, which controls the operation according to the pressure change of the fluid 1. [

At this time, the fluid 1 includes both liquid and gas, which flows into the housing 10 and raises the pressure inside the housing 10.

The housing 10 is a main body portion for housing the elastic diaphragm 30, the movable electrode 40 and the like therein. The housing 10 has a housing space 11 therein and a fluid inlet 13 is formed. Therefore, the elastic diaphragm 30, the movable electrode 40, and the like are located in the accommodation space 11 inside the housing 10. The fluid inlet 13 is a passage for introducing the fluid 1 into the accommodation space 11 and is formed at one end of the housing 10 so as to communicate with the accommodation space 11. Meanwhile, the other end of the housing 10 is formed to be opened, and is sealed by the substrate 20.

Here, the substrate 20 is disposed at the other end of the housing 10, thereby sealing the other end of the housing 10. At this time, the other end of the housing 10 is sealed by the substrate 20, and the protective cap 14 extends from the other end of the housing 10 to cover the substrate 20, thereby protecting the substrate 20 (See Fig. 2). The protection cap 14 may be integrally formed with the housing 10 or may be separately formed and coupled to the other end of the housing 10. Since the other end of the housing 10 is sealed by the substrate 20 when the fluid 1 flows into the housing space 11 of the housing 10 through the fluid inlet 13, The deformation of the elastic diaphragm 30 located therein is caused.

The elastic diaphragm 30 is a film having elasticity and is disposed in the accommodation space 11 away from the substrate 20. [ At this time, the edge of the elastic diaphragm 30, that is, the peripheral portion thereof is coupled to the inner surface of the housing 10, so that the elastic diaphragm 30 is fixed to the accommodation space 11. Here, the elastic diaphragm 30 has elasticity, and the elastic diaphragm 30 may be formed of single crystal or polycrystalline silicon. However, the elastic diaphragm 30 is not necessarily formed of silicon, but may be formed of another material having elasticity. Since the elastic diaphragm 30 has elasticity, when the fluid 1 flows into the accommodation space 11, one side of the elastic diaphragm 30 is pressed by the fluid 1, whereby the elastic diaphragm 30 Are convexly curved toward the substrate 20. [ On the contrary, when the fluid 1 in the accommodation space 11 passes through the fluid inlet 13 to the outside, the curved elastic diaphragm 30 is deformed to its original shape. The movable electrode 40 is disposed on the elastic diaphragm 30 whose shape changes according to the pressure change and the fixed electrode 50 is disposed on the substrate 20 so that the electrical contact is opened and closed.

Here, the movable electrode 40 is an electrode for forming a conductive path, is formed in a pin shape, and is arranged on the other surface of the elastic diaphragm 30. The other surface of the elastic diaphragm 30 refers to the opposite surface of the elastic diaphragm 30 pressed by the fluid 1, that is, the surface of the elastic diaphragm 30 facing the substrate 20. The movable electrode 40 is attached to the other surface of the elastic diaphragm 30 or one end of the movable electrode 40 is inserted into the elastic diaphragm 30 and fixed. At this time, the other end of the movable electrode 40 can be extracted from the other surface of the elastic diaphragm 30, but it can be inserted into the elastic diaphragm 30 together with one end thereof, and only one surface of the other end of the movable electrode 40 can be exposed . Here, the movable electrode 40 may be formed of a conductive material, that is, a metal or a silicide. In this case, the metal may be, for example, silver (Ag), but is not limited thereto. The movable electrode 40, which is formed of a conductive material and is exposed to the outside, contacts the fixed electrode 50 when the elastic diaphragm 30 is bent by the internal pressure to form a conductive path.

The fixed electrode 50 is an electrode which is brought into contact with the movable electrode 40 to generate an electric signal, and is formed into a columnar shape. The columnar fixed electrode 50 is fixed to the substrate 20 through the substrate 20 so that one end of the fixed electrode 50 is arranged in the direction of the movable electrode 40 and the other end of the fixed electrode 50 And is exposed to the outside of the housing 10. When the movable electrode 40 and the fixed electrode 50 are brought into contact with each other and the elastic diaphragm 30 is flattened in its original shape when the elastic diaphragm 30 is curved convexly toward the substrate 20, 40 and the fixed electrode 50 are separated from each other. In this way, the electrical contacts of the pressure switch according to this embodiment are opened and closed.

As described above, the pressure switch according to the present embodiment has the movable electrode 40 disposed on the elastic diaphragm 30 located inside the housing 10, and fixed to the substrate 20 disposed on the other end of the housing 10 Since the movable electrode 40 and the fixed electrode 50 are in contact with each other when the fluid 1 flows into the housing 10 due to the arrangement of the electrodes 50, There is an effect of simplification.

Meanwhile, the pressure switch according to the present embodiment may further include a pair of supports 60. Here, the support table 60 protrudes from the other surface of the elastic diaphragm 30 and is coupled to the substrate 20. At this time, the pair of supports 60 are arranged to face each other with the fixed electrode 50 therebetween. This pair of supports 60 not only supports the elastic diaphragm 30 but also forms a cavity 61 which is a cavity through which the elastic diaphragm 30 can move. Therefore, the shape of the elastic diaphragm 30 disposed between the pair of supports 60 is curved convexly as the internal pressure changes. In addition, the support table 60 serves to determine the set pressure of the pressure required in the apparatus in which the pressure switch according to the present embodiment is used. Specifically, the set value of the pressure at which the electrical contact is closed is determined by the thickness of the elastic diaphragm 30 and the distance between the pair of supports 60. As the thickness of the elastic diaphragm 30 is thinner, the electrical contact is closed by curving at a lower pressure. On the other hand, in the case of the elastic diaphragm 30 having a constant thickness, when the distance between the pair of supports 60 is narrowed, a larger pressure must be applied for the elastic diaphragm 30 to bend. This is because the portion of the elastic diaphragm 30 deformed by the pressure is limited to the portion disposed between the pair of supports 60. Therefore, by adjusting the thickness of the elastic diaphragm 30 and the distance between the pair of supports 60, it is possible to design the electrical contacts to be closed at a pressure higher than a predetermined set value.

Here, the pair of support rods 60 have a predetermined length and can be arranged to be parallel to each other along the longitudinal direction. However, the present invention is not limited to the case where the pair of supports 60 of the pressure switch according to the present embodiment are necessarily arranged side by side.

Figs. 3 to 4 are perspective views of the substrate, the elastic diaphragm, and the supporting member shown in Figs. 1 and 2. Fig.

The substrate 20 of the pressure switch according to the embodiment of the present invention, and the elastic diaphragm 30 can be designed in various forms. 3 to 4, the substrate 20 and the elastic diaphragm 30 may be formed in a rectangular or circular shape. However, the present invention is not limited to this embodiment, and may be formed into various shapes of polygons or ellipses depending on the shape of the housing 10. [ At this time, the pair of supports 60 may have a length equal to the length of the substrate 20 and the elastic diaphragm 30 (see FIG. 3), but may be formed to be shorter than the length of the substrate 20 or the elastic diaphragm 30 (See FIG. 4). This is because the forming layer must be etched to form the cavity 61 in the manufacturing method of the pressure switch according to this embodiment, which will be described later.

In general, the operation of the pressure switch according to the present embodiment will be described.

5 is a cross-sectional view illustrating an operating state of a pressure switch according to an embodiment of the present invention.

As shown in FIG. 5, when the fluid 1 flows into the accommodation space 11 through the fluid inlet 13 of the housing 10, it pressurizes the elastic diaphragm 30. At this time, the portion of the elastic diaphragm 30 located between the pair of supporters 60 is curved convexly into the cavity 61, and the movable electrode 40 disposed on the other surface of the elastic diaphragm 30 contacts the substrate 20 And comes into contact with the disposed fixed electrode 50. As the movable electrode 40 and the fixed electrode 50 come into contact with each other, the electrical contact is closed and a conductive path is formed. On the other hand, when the fluid 1 flows out from the accommodation space 11 of the housing 10 through the fluid inlet 13, the elastic diaphragm 30 returns to its original shape, (50) are separated from each other, so that the electrical contact is opened.

Hereinafter, a method of manufacturing a pressure switch according to an embodiment of the present invention will be described.

FIG. 6 is a flowchart for explaining a manufacturing process of a pressure switch according to an embodiment of the present invention, and FIGS. 7 to 19 are cross-sectional views illustrating a manufacturing process of a pressure switch according to an embodiment of the present invention.

6, a method of manufacturing a pressure switch according to an embodiment of the present invention includes the steps of (A) forming sacrificial layer 21 by depositing silicon dioxide (SiO ₂ ) on a substrate 20 And a pair of coupling surfaces 27a and 27b penetrating from the one surface of the sacrificial layer 21 to the other surface so as to face each other so as to face each other and being a predetermined portion of the substrate 20, The movable electrode 40 is formed in a pin shape on one surface of the central portion 21a of the sacrificial layer 21 located between the pair of through holes 25a and 25b (D) depositing silicon to cover one surface of the sacrificial layer 21 and the pair of coupling surfaces 27a and 27b to form the elastic diaphragm 30 and the support table 60 (S400).

The method of manufacturing the pressure switch according to the present embodiment includes the steps of forming the sacrificial layer 21 (S100), forming the through holes 25a and 25b A step S300 of forming the movable electrode 40 and a step S400 of forming the elastic diaphragm 30 and the support 60 are included in the step S200.

Here, the MEMS process refers to a technique for fabricating an ultra-small precision machine based on semiconductor process technology. By using such a MEMS process, the pressure switch according to the present embodiment can be manufactured in a very small size and can serve as a pressure switch of a fire detector.

7, the sacrificial layer 21 is formed by depositing silicon dioxide (SiO ₂₎ on a surface of a substrate (20). At this time, there are physical vapor deposition and chemical vapor deposition as vapor deposition, and vapor deposition such as thermal vacuum deposition using heat or vacuum deposition such as e-beam deposition using electron beam, or sputtering can do. After the sacrifice layer 21 is formed, a step of forming through holes 25a and 25b is performed.

As shown in FIGS. 8 to 10, the through holes 25a and 25b are formed through patterning and etching (etching) processes through lithography. At this time, the through holes 25a and 25b are formed so as to penetrate from one surface of the sacrificial layer 21 to the other surface so as to face each other. The through holes 25a and 25b penetrate to the other surface of the sacrificial layer 21 so that a part of one surface of the substrate 20 on which the sacrificial layer 21 is deposited is exposed. Plane 27a and 27b, respectively. Since the through holes 25a and 25b are a pair, the coupling surfaces 27a and 27b are also formed as a pair. The pair of through holes 25a and 25b may have a predetermined length and may be formed to be parallel to each other along the longitudinal direction.

More specifically, the step of forming the through holes 25a and 25b includes the steps of forming a first resist film 23, patterning the first resist film 23, and etching the sacrificial layer 21 . The first resist film 23 is formed by applying a first resist liquid to one surface of the sacrificial layer 21. [ When the first resist film 23 is formed, the first resist film 23 is patterned by using a photomask (M1, photomask) to form a pattern corresponding to the coupling surfaces 27a and 27b Reference). The sacrificial layer 21 is etched so that the pair of coupling surfaces 27a and 27b are exposed using the first resist film thus patterned as a first mask (see FIG. 9), and the sacrificial layer 21 is etched from one side of the etched sacrifice layer 21 By removing the first resist film 23 (see Fig. 10), a pair of through holes 25a and 25b are formed. When the through holes 25a and 25b are formed in this manner, the movable electrode 40 is formed.

As shown in Figs. 11 to 13, the movable electrode 40 is also formed through patterning and etching through lithography. This movable electrode 40 is formed in a pin shape at the central portion 21a of the sacrificial layer 21. [ Here, the central portion 21a of the sacrificial layer 21 means a portion of the sacrificial layer 21 located between the pair of through holes 25a and 25b (see FIG. 10).

The step of forming the movable electrode 40 includes the steps of forming the conductive layer 41, forming the second resist film 43, patterning the second resist film 43, and forming the conductive layer 41 ). &Lt; / RTI > At this time, the movable electrode 40 is formed of a conductive material. The conductive material may include a metal or a silicide, and the metal may be, for example, silver (Ag).

Here, the conductive layer 41 is formed by depositing a conductive material on one side of the sacrificial layer 21 (see FIG. 11). A second resist film 43 is formed on the conductive layer 41 thus formed to form a photomask M2 so that a pattern corresponding to the fin-shaped end face of the movable electrode 40 is formed. The second resist film 43 is patterned (see Fig. 12). When the conductive layer 41 is etched using the second resist film 43 patterned in this manner as the second mask, a pin-shaped movable electrode 40 is formed (see FIG. 13). When the movable electrode 40 is formed, the elastic diaphragm 30 and the support base 60 are formed.

14 to 17, the elastic diaphragm 30 and the support base 60 are patterned and etched through lithography in the same manner as the through-holes 25a and 25b (see FIG. 10) and the movable electrode 40 . The elastic diaphragm 30 and the support 60 are formed by depositing silicon to cover one surface of the sacrificial layer 21 and the pair of coupling surfaces 27a and 27b (see FIG. 10) (see FIG. 14). The silicon layer 31 deposited on one side of the sacrificial layer 21 forms the elastic diaphragm 30 and the silicon layer 31 formed by filling the silicon into the through holes 25a and 25b, And the elastic diaphragm 30 and the substrate 20 are bonded to each other. At this time, the movable electrode 40 formed on the central portion 21a of the sacrificial layer 21 is inserted into the elastic diaphragm 30 while silicon is deposited on one surface of the sacrificial layer 21. On the other hand, silicon includes both single crystal or polycrystalline silicon.

More specifically, the step of forming the elastic diaphragm 30 and the support 60 includes the steps of forming the third resist film 33, etching both side surfaces of the silicon layer 31, . The third resist film 33 is formed by applying a third resist solution on one surface of the silicon layer 31 and patterning the third resist film 33 using the photomask M3 (see FIG. 15) The third resist film 33 is removed (see Fig. 17) after etching both side surfaces of the silicon layer 31 (see Fig. 16) using the third resist film 33 as the third mask.

On the other hand, as shown in FIG. 18, the step of forming the elastic diaphragm 30 and the support 60 may further include etching the sacrificial layer 21. After the third resist film 33 is removed, the sacrificial layer 21 located between the substrate 20 and the elastic diaphragm 30 is etched to form the cavity 61.

19, the step of forming the elastic diaphragm 30 and the support 60 may further include the step of flattening one surface of the silicon layer 31. In this case, After the third resist film 33 is removed, one side of the silicon layer 31 is planarized to form the elastic diaphragm 30 having a uniform thickness. Here, one surface of the silicon layer 31 means a surface opposite to the surface of the silicon facing the substrate 20.

The method of manufacturing the pressure switch according to the present embodiment includes the steps of preparing the housing 10 to seal the elastic diaphragm 30 inside the housing 10 and sealing the other end of the housing 10 .

Here, the housing 10 is provided with a receiving space 11 therein, the fluid 1 is introduced into the receiving space 11 at one end thereof, and the other end thereof is opened. By disposing the substrate 20 at the other end of the housing 10, the elastic diaphragm 30 is disposed in the accommodation space 11 of the housing 10 while the other end of the housing 10 is closed (Figs. 1 to 2 Reference).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the present invention. It is obvious that the modification or improvement is possible.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

1: Fluid 10: Housing
11: accommodation space 13: fluid inlet
14: protective cap 20: substrate
21: sacrificial layer 23: first resist film
25a, 25b: Through holes 27a, 27b:
30: Elastic diaphragm 31: Silicon layer
33: third resist film 40: movable electrode
41: conductive layer 43: second resist film
50: fixed electrode 60: support
61: Cavity M1, M2, M3: Photomask

Claims

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(A) depositing silicon dioxide on a substrate to form a sacrificial layer;
(B) a through hole penetrating from the one surface to the other surface of the sacrificial layer so as to face each other so as to expose a pair of coupling surfaces which are a predetermined part of the substrate;
(C) forming a movable electrode in a pin shape on one surface of the sacrificial layer central portion located between the pair of through holes; And
(D) depositing silicon to cover one surface of the sacrificial layer and a pair of the mating surfaces to form an elastic diaphragm and a support;
Lt; / RTI >
Preparing a housing having a receiving space therein and having a fluid inlet formed at one end thereof and having the other end opened to allow the fluid to flow into the receiving space; And
Disposing the substrate at the other end of the housing to seal the other end of the housing;
Further comprising the steps of:

The method of claim 6,
Wherein the pair of through-holes each have a predetermined length and are formed to be parallel to each other along the longitudinal direction.

The method of claim 6,
The step (B)
Applying a first resist solution to one surface of the sacrificial layer to form a first resist film;
Patterning the first resist film so that a pattern corresponding to a pair of the coupling surfaces is formed;
Etching the sacrificial layer so that a pair of the coupling surfaces are exposed using the patterned first resist film as a first mask; And
Removing the first resist film from one side of the etched sacrificial layer;
And a pressure switch.

The method of claim 6,
Wherein the movable electrode is formed of a conductive material.

The method of claim 9,
Wherein the conductive material is a metal or a suicide.

The method of claim 9,
The step (C)
Depositing the conductive material on one surface of the sacrificial layer to form a conductive layer;
Applying a second resist solution onto the conductive layer to form a second resist film;
Patterning the second resist film so that a pattern corresponding to a fin-shaped end face of the movable electrode is formed; And
Etching the conductive layer so that the fin-shaped movable electrode is formed using the patterned second resist film as a second mask;
And a pressure switch.

The method of claim 6,
The step (D)
Forming a third resist film by applying a third resist solution on one side of the silicon layer formed by depositing the silicon;
Patterning the third resist film and using the patterned third resist film as a third mask to etch both side surfaces of the silicon layer; And
Removing the third resist film from the etched silicon layer;
And a pressure switch.

The method of claim 12,
The step (D)
And etching the sacrificial layer after removing the third resist film.

The method of claim 12,
The step (D)
Further comprising planarizing one surface of the silicon layer after removing the third resist film.

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